TW201113631A - Improved light mask manufacturing process - Google Patents

Improved light mask manufacturing process Download PDF

Info

Publication number
TW201113631A
TW201113631A TW98134753A TW98134753A TW201113631A TW 201113631 A TW201113631 A TW 201113631A TW 98134753 A TW98134753 A TW 98134753A TW 98134753 A TW98134753 A TW 98134753A TW 201113631 A TW201113631 A TW 201113631A
Authority
TW
Taiwan
Prior art keywords
pattern
bar code
layer
mask
photoresist layer
Prior art date
Application number
TW98134753A
Other languages
Chinese (zh)
Other versions
TWI414881B (en
Inventor
da-sen Zhou
Original Assignee
Evervision Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evervision Electronics Co Ltd filed Critical Evervision Electronics Co Ltd
Priority to TW98134753A priority Critical patent/TW201113631A/en
Publication of TW201113631A publication Critical patent/TW201113631A/en
Application granted granted Critical
Publication of TWI414881B publication Critical patent/TWI414881B/zh

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

This invention is an improved light mask manufacturing process. The process comprises of obtaining such light mask materials as a glass layer, a chrome layer, an oxide layer, and a photo resistance layer. Apply processing step to the light mask materials in the following order: light exposure, layout of graphics, bar code printing, etching, and stripping process. The bar code printing process is the most significant characteristic amongst the aforementioned processes, because it utilizes a machine to spray paint the bar code at an appropriate location on the chrome layer. Hence, the bar code can be formed on the light mask at the same time after etching and stripping processes are completed. Therefore, this manufacturing process is fast, simple, and offer stable quality while provides convenience to user management over the light mask.

Description

201113631 六、發明說明: 【發明所屬之技術領域】 本發明係隸屬於光罩製程之領域,特別係指一種能包 含成型管理用條碼之光罩製程之改良。 【先前技術】 、,按’半導體钱巾’許乡製程f在微料程採用光罩 以形成圖案’此圖案包含用來轉移在半導體晶圓所設計的 ,路圖案等。因此光罩不僅生產製造重要,由於數量眾多, •其官理亦是-項繁項的重大的責任。 由先前技術可知,-般廠商為了方便光罩的管理,皆 個群設定有Μ編號的條碼㈣,此料若係直 ▲、:Γ先罩表面時,因為會有透光的情形,因此條碼之 =機掃糾並無法讀取,故不適用。另—種方式係於光 :用主雷射直描成型條碼,惟此種方式不僅費時且成本 Ν ’同時絲母片復製時’則條碼的編號也相同,造成管 更。因此最常用的方式係將條碼製成貼紙 ΐ二Γ保護盒外側。然而此種方式對於管理者來說 :次同或相同的光罩設置條碼 分不便且費時,同時貼於盒外的條 馬亦谷易有磨損的情形,而有加以改善之必要。 討,發明人乃針對前述習用創作問題深入探 求解广事相關產業之研發與製造經驗,積極尋 求解决之道’㈣長期努力之研究與發展,終於成功的開 201113631 以改善習_之問題。 『光二:ί上述的問題而提供-種 成型於光罩上’不僅令光罩條碼的= =速、間便且品質穩定,同時亦能方便廠商管理眾多: 係於上述之功效目的,本發明『光罩製程之改良』 修u 于原材到製作完成之一系列步驟中,加入將 型之程序’進而能在完成光罩後,同時成 Λ #之條碼。摘作餘㈣包括『取得 ^材』、佈局圖形』、『顯影』、『印製條碼』、『 :』=羊細之製程内容為:取得一具有玻璃層、鉻層到 =化層及光阻層之光罩原材後,利用電射直描或曝光等方 =,於錢軍原材之光阻層上形成欲成型之圖形。之後再 二用顯影液將該光阻層上感應圖形部位之光阻劑洗去,再 =由喷印條碼的機器將預定之條碼喷印於該鉻層適當位 。而後再利用钱刻液洗去未受光阻層遮蔽之鉻層,得到 所需之電極結構及條碼,最後將所有光阻層洗淨,留下所 需鉻層構成之電極結構與條碼。藉此,能將條碼於光罩製 =過程中,-併成型於光罩上,不僅迅逮'簡便,品質穩 定,同時更能方便使用者進行光罩的管理。 一有關本發明所採用之技術、手段及其功效,茲舉一較 佺實施例並配合圖式詳細說明於後,相信本發明上述之目 的、構造及特徵,當可由之得一深入而具體的瞭解。 201113631 【實施方式】 二奢參閱第一〜四圖所示,本創作『光罩製程之改良』 W光罩(1 〇)’係絲碼(2Q)的成魏人於光罩 〇)的製造過程中,包含以下步驟: A ·取得原材,取得—光罩騎(iq,),該光罩原 t )由上往設具有一玻璃層(11)、鉻層(⑴、 0 3 )’以及由塗抹光阻劑而成形之光阻層(1 4 )。 B·佈局圖形,於該光罩原材(iq,)之光阻層Q =上形成欲成型之電路等圖形。此步驟 :戶=直描方式,於該光罩原材(1Q,)上利用雷射描 ς之圖型。或者如第三圖之簡易圖所示,係可以曝光 =達成’即_光源(如紫外光)照射—光罩母片(3 ^ ’將該光罩母片(3 ◦)上之電路圖形投射至光阻層(1 )’進—步令該光阻層(14)感應出投射之圖形。 形部二::顯影液將該光阻層(“)上感應圖 U 1製條碼(2 Q ),彻印刷或喷印機11於該鉻層 於上2)適當處,將一具有預定編號之條碼(2 〇)喷印 E·钱刻,利用姓刻液洗去未受光阻層(m遮蔽 〇)層(12),得到所需之電極結構(12,)及條碼(2 厚r f .剝離’將所有光阻層(14)洗淨,留下所需鉻 θ i2)構成之電極結構(12,),以及條碼(2〇)。 猎此’利用該條碼(2 〇)於光罩製作過程中,以喷 201113631 印方式顯像於鉻層(1 2)上,並利用蝕刻步驟將條碼(2 〇)成型於該鉻層(1 2)上之技術,不僅使光罩(i ) 所屬條碼(2 0)的成型更迅速、簡便,品質穩定,同時 更,方便使用者進行光罩的管理,進而能提昇管理的效率 及品質。 綜上所述,本發明在同類產品中實有其極佳之進 ^恭同時遍查國内外關於此類結構之技術資料、文獻中 亦未么現有相同的構造存在在杏 發明&lt; 先疋以,本發明實已具備 号月專利要件,茇依法提出申請。 上述實施例,僅用以舉例說明本發 發明精神之範圍,孰據以在不離本 修飾盥庫用.,^ J 項技藝者憑之而作之各種變形、 况、應用,均應包括於本 第 第 第 第 【圖式簡單說明】 狀乾可者。 圖 圖 圖:係由本發明製程之方塊圖。 係利用本發明製程所 係本發明製程步驟 成°口不思圖。 圖:係本發明光罩原材之剖:::圖。 【主要元件符號說明】 θ 光罩:(1 0 ) 玻璃層:(1 1 ) 光罩原材:(1 〇,) 電極結構:(12,)鉻層:(12) 條碼:(2 〇 光阻層:(丄4 ) 氧化層:(1 3 ) 光罩母片:(3〇)201113631 VI. Description of the Invention: [Technical Field of the Invention] The present invention is in the field of photomask manufacturing, and particularly refers to an improvement of a photomask process which can include a bar code for forming management. [Prior Art], according to the 'semiconductor money towel', the Xuxiang process f uses a photomask to form a pattern in the micro-process. This pattern includes a pattern for transferring a semiconductor wafer, a road pattern, and the like. Therefore, the reticle is not only important for manufacturing, but also because of its large number, and its official principle is also a major responsibility. As can be seen from the prior art, in order to facilitate the management of the mask, all manufacturers have a barcode number (4). If the material is straight ▲, the surface of the mask is light, because there is light transmission, the barcode The machine scan is correct and cannot be read, so it is not applicable. Another way is to light: the bar code is formed by direct scanning with the main laser, but this method is not only time-consuming and cost Ν ‘ while the mother chip is copied, the bar code number is also the same, resulting in a tube. Therefore, the most common way is to make the barcode into a sticker on the outside of the protective box. However, in this way, for the manager: the same or the same mask setting bar code is inconvenient and time consuming, and at the same time, the bar attached to the outside of the box is prone to wear and tear, and there is a need for improvement. Inventors have in-depth exploration of the R&D and manufacturing experience of the industry related to the above-mentioned customary creation problems, and actively seek solutions. (4) The long-term efforts of research and development have finally succeeded in opening 201113631 to improve the problem of learning. "Light 2: ί, the above problem is provided - molded on the reticle" not only makes the reticle barcode = = speed, easy and stable quality, but also facilitates the management of many manufacturers: for the purpose of the above-mentioned effects, the present invention "Improvement of reticle process" 修u In the series of steps from the original material to the completion of the production, the program of the type is added, and then the reticle can be completed at the same time. Excerpts (4) include "acquisition of materials", layout graphics, "development", "printing bar code", ":" = sheep fine process content: to obtain a glass layer, chrome layer to = layer and light After the mask of the mask is used, the pattern to be formed is formed on the photoresist layer of Qian Jun's original material by direct drawing or exposure. Then, the photoresist of the sensing pattern portion on the photoresist layer is washed away by the developer, and then the predetermined barcode is printed on the chrome layer by the machine for printing the barcode. Then, the chromium layer not covered by the photoresist layer is washed away with the money engraving liquid to obtain the desired electrode structure and bar code, and finally all the photoresist layers are washed, leaving the electrode structure and bar code composed of the desired chromium layer. In this way, the bar code can be formed in the mask manufacturing process, and formed on the reticle, which not only quickly captures the 'simple, stable quality, but also facilitates the user to manage the reticle. </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> To understanding. 201113631 [Embodiment] The second luxury is shown in the first to fourth figures. This is the creation of the "Improvement of the mask process" W-mask (1 〇)'s silk fabric (2Q) In the process, the following steps are included: A. Obtaining the original material, obtaining - the mask riding (iq,), the original mask of the mask has a glass layer (11) and a chromium layer ((1), 0 3 ) from the top. And a photoresist layer (14) formed by applying a photoresist. B. Layout pattern, forming a pattern such as a circuit to be formed on the photoresist layer Q of the reticle material (iq,). This step: household = direct drawing mode, using the pattern of the laser drawing on the reticle material (1Q,). Or as shown in the simple diagram of the third figure, it is possible to expose = reach 'that is, light source (such as ultraviolet light) illumination - the mask master (3 ^ 'project the circuit pattern on the mask master (3 ◦) To the photoresist layer (1)' step-by-step, the photoresist layer (14) induces a projected pattern. Shape 2:: developer to the photoresist layer (") on the U1 bar code (2 Q ), the printing or printing machine 11 is applied to the chrome layer at the appropriate 2), and a barcode (2 〇) having a predetermined number is printed, and the unetched layer is washed away by the surname engraving (m). Masking the layer (12) to obtain the desired electrode structure (12,) and the bar code (2 thick rf. stripping 'all the photoresist layer (14) is washed, leaving the desired chromium θ i2) to form the electrode structure (12,), and bar code (2〇). Hunt this 'use the bar code (2 〇) in the mask manufacturing process, spray the 201113631 printing method on the chrome layer (12), and use the etching step The bar code (2 〇) is formed on the chrome layer (12), which not only makes the bar code (20) of the reticle (i) more rapid and simple, but also has stable quality and is convenient for users. The management of the mask can improve the efficiency and quality of management. In summary, the invention has excellent performance in the same kind of products. At the same time, it also checks the technical information about such structures at home and abroad. The same existing structure exists in the apricot invention. First, the present invention has the patent for the month, and the application is made according to the law. The above embodiments are only used to illustrate the scope of the spirit of the present invention. All kinds of deformations, conditions, and applications that are used by those who do not leave this modification library should be included in this first [the simple description of the figure]. The invention is a block diagram of the process of the present invention. The process steps of the present invention are made by using the process of the present invention. Fig.: The cross-section of the original reticle of the present invention::: Fig. [Description of main components] θ light Cover: (1 0 ) Glass layer: (1 1 ) Photomask material: (1 〇,) Electrode structure: (12,) Chromium layer: (12) Bar code: (2 〇 photoresist layer: (丄4) Oxidation Layer: (1 3 ) Mask master: (3〇)

Claims (1)

201113631 七、申請專利範圍·· 1. 一種光罩製矛呈之改良,&amp;含以下步驟·· 取一光罩原材,該光罩原材具有一玻 曰Β ^ &amp; 及塗抹光阻劑而形成之光阻層; 之圖形 圖形,於該光罩原材之光阻層上形成欲成型 光阻影’利用顯影液將該光阻層上感應圖形部位之 適當:置印製條碼’利用機器將預定之條碼噴印於該鉻層 ㈣去未受総層遮蔽之 付到所需之電極結構及條碼; 電二剝vr有光阻層洗淨’留下所需鉻層構成之 4極結構’以及條碼; A 藉此,㈣條錢光㈣作過料, 便’品質穩定,同時更能方便二 2依申凊專利範圍第1項所述之光罩势程 =步驟B.佈局圖形,係可以直描方式形 成圖形’而直描方式係可利用雷射描繪所須之圖型。 ^•依中請專利範圍第i項所述之光罩製程之改良, ^ ·佈局圖形,係可以曝光方式達成,即利用光 η)照射一光軍母片,將該光罩母片上之圖形 又射至光阻層,進-步令該光阻層感應出投射之圖形。201113631 VII. Scope of application for patents·· 1. Improvement of a mask-made spear, &amp; The following steps include: · Take a mask raw material, the mask material has a glass 曰Β ^ &amp; and smear photoresist a photoresist layer formed by the agent; a pattern formed on the photoresist layer of the reticle material to form a photoresist pattern to be formed by using a developer to form a pattern on the photoresist layer: a barcode is printed Using the machine to print the predetermined bar code on the chrome layer (4) to the desired electrode structure and bar code without being covered by the enamel layer; the electric stripping vr has a photoresist layer to wash 'remaining the desired chrome layer 4 The pole structure 'and the bar code; A. By this, (4) the money light (4) is used as the material, then the 'quality is stable, and at the same time more convenient. 2 2 according to the patent scope of the patent range, the mask range = step B. layout graphics The pattern can be formed by direct drawing, and the direct drawing mode can be used to depict the pattern required by the laser. ^• According to the improvement of the mask process described in item i of the patent scope, ^ · layout pattern can be achieved by exposure, that is, using light η) to illuminate a master film, the pattern on the mask master It is also incident on the photoresist layer, and the step-by-step causes the photoresist layer to induce a projected pattern.
TW98134753A 2009-10-14 2009-10-14 Improved light mask manufacturing process TW201113631A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW98134753A TW201113631A (en) 2009-10-14 2009-10-14 Improved light mask manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW98134753A TW201113631A (en) 2009-10-14 2009-10-14 Improved light mask manufacturing process

Publications (2)

Publication Number Publication Date
TW201113631A true TW201113631A (en) 2011-04-16
TWI414881B TWI414881B (en) 2013-11-11

Family

ID=44909702

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98134753A TW201113631A (en) 2009-10-14 2009-10-14 Improved light mask manufacturing process

Country Status (1)

Country Link
TW (1) TW201113631A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104460239A (en) * 2014-11-14 2015-03-25 深圳市路维光电股份有限公司 Manufacturing method of photomask sub-plate with code

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6586158B2 (en) * 2001-05-25 2003-07-01 The United States Of America As Represented By The Secretary Of The Navy Anti-charging layer for beam lithography and mask fabrication
US7640529B2 (en) * 2002-07-30 2009-12-29 Photronics, Inc. User-friendly rule-based system and method for automatically generating photomask orders
JP4843304B2 (en) * 2005-12-14 2011-12-21 富士通セミコンダクター株式会社 Photomask manufacturing method, device manufacturing method, and photomask monitoring method
JP5046394B2 (en) * 2007-08-07 2012-10-10 Hoya株式会社 Mask blank substrate manufacturing method, mask blank manufacturing method, mask manufacturing method, and mask blank substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104460239A (en) * 2014-11-14 2015-03-25 深圳市路维光电股份有限公司 Manufacturing method of photomask sub-plate with code

Also Published As

Publication number Publication date
TWI414881B (en) 2013-11-11

Similar Documents

Publication Publication Date Title
KR101639519B1 (en) Methode for manufacturing conductive mesh pattern, mesh electrode manufactured by the methode and laminate
TWI313484B (en)
CN103842948B (en) Capacitance type input device and its manufacture method and image display device
TW200403548A (en) Manufacturing method for exposure mask, generating method for mask substrate information, manufacturing method for semiconductor device, mask substrate, exposure mask and server
TWI225282B (en) Test photomask, flare evaluation method, and flare compensation method
JP4962807B2 (en) Method for producing a film on which a micropattern is formed
TW201111905A (en) Method for producing phase shift mask, method for producing flat panel display, and phase shift mask
CN105259733B (en) One kind being used for the patterned flexible mask plate preparation method of curved surface
KR101295251B1 (en) Transparent display part image multi deposition method transparent display part image multi deposition method
CN102053509A (en) Method for manufacturing raised grating alignment mark in imprinting lithography
JP2008527736A5 (en)
CN1776523A (en) Low cost simple method for making photo etched mask
TW201017723A (en) Pattern forming method and device production method
TW201113631A (en) Improved light mask manufacturing process
TW201501594A (en) Method of manufacturing a high-resolution flexographic printing plate
WO2015043321A1 (en) Nanoimprint lithography device and method
TW538304B (en) Halftone phase shift mask and its manufacturing method
CN103246160B (en) The production method of microfilm of characters picture
CN104765247A (en) Making method of submicron grating
TW587202B (en) Method of repairing attenuate phase shift mask
TW418344B (en) Photomask raw glass with surface film protective layer and its production and protective layer forming liquid
US9223201B2 (en) Method of manufacturing a photomask with flexography
TW548511B (en) Photolithographic mask
CN107584858A (en) A kind of half tone manufacturing process being exposed using collotype
JP2011066411A (en) Template for imprint lithography and labeling method for the same

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees