CN1776523A - Low cost simple method for making photo etched mask - Google Patents
Low cost simple method for making photo etched mask Download PDFInfo
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- CN1776523A CN1776523A CN 200510019949 CN200510019949A CN1776523A CN 1776523 A CN1776523 A CN 1776523A CN 200510019949 CN200510019949 CN 200510019949 CN 200510019949 A CN200510019949 A CN 200510019949A CN 1776523 A CN1776523 A CN 1776523A
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- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The method includes steps: sticking film in high resolution with designed pattern onto quartz glass to prepare initial photo etching mask; sticking pattern face of the initial photo etching mask to face of chromeplated glass with photoresist being coated; using photo etching technique exposes chromium glass with 2-40 micros photoresist being coated; then, developing, blowing and drying chromium glass; under 90-130 deg.C, soft drying 3-10 minutes (optimal temperature is 110-120 deg.C) to make graph of photoresist smooth; etching out metal chromium film without protection of photoresist by using traditional wet etching technique, and further, removing residual photoresist so as to obtain standard photoetch mask. In simple technique, and low cost, the invention is suitable to photo etching mask of biochemical analysis chip with minimum linewidth in 20 micros as well as to preparing photoetch mask with minimum linewidth larger than 20 micros.
Description
Technical field
The present invention relates to a kind of method for making of low cost simple photo etched mask, the mask fabrication method especially for the biochemical analysis chip belongs to optoelectronic semiconductor field and biochemical analysis field.
Background technology
Present photo etched mask method for making adopts electron beam lithography or photomechanical production technology usually, need expensive etching apparatus though electron beam lithography plate-making technology fineness is high, and it is high to make requirement, complex process, and the production cycle is long, the production cost height; The photomechanical production technology is the zoom technology of utilizing on taking a picture, big figure transferred on the template that is coated with metal by convergent-divergent make photo etched mask, usually need the projector equipment of specialty, and exist processing step many, whole explained hereafter cost also compares higher.In the biochemical analysis chip research, often need to change chip design, buy common photo etched mask and cost an arm and a leg, and design is complicated, the production cycle is long.This just makes conventional lithography mask fabrication method can not satisfy the needs of biochemical analysis chip research.Biochemical analysis chip live width is necessary conscientiously generally at 30um～200um order of magnitude so seek a kind of photo etched mask method for making of suitable biochemical analysis chip manufacturing needs simultaneously.
Summary of the invention
For overcome the deficiency that existing electron beam lithography, photomechanical production technology exist in making photo etched mask, the invention provides a kind of method for making of new low cost simple photo etched mask, the advantage that this method has that production technology is simple, with low cost, the process-cycle is short, and this method is particularly suitable for the photo etched mask that minimum live width such as biochemical analysis chip is not less than 20um and makes.
Technical scheme provided by the invention is: a kind of low cost simple is made the method for photo etched mask, its concrete making step is, the high resolving power film that has detail of design with film output pastes on the quartz glass as initial photo etched mask, the pattern face of the photo etched mask that will make with film is close to the chromium plating glass that scribbles photoresist again, and utilizing photoetching technique then (is 10～20mW/cm to the chromium glass energy generally to the chromium glass exposure that scribbles 2～40um thick photoresist
2, 300～480nm wave band ultraviolet photoetching, time shutter is 2～90 seconds), develop, dry up after, 90 ℃～130 ℃ soft bakings of temperature 3～10 minutes (preferred temperature is 110 ℃～120 ℃), the photoresist figure that makes is level and smooth, the tiny pattern edge roughness of elimination script film film, the deficiency that fineness is not enough.Etch away the crome metal film that does not have the photoresist protection with traditional wet etching technique again, remove residual photoresist and obtain the meticulous photo etched mask of pattern.
Independently knit effect because of photoresist has after softening, can repair coarse part automatically and make the lithographic pattern edge-smoothing, show that by microphotograph the lithographic pattern edge is greatly improved after soft baking, resolution can be brought up to the 20um live width.So make biochemical analysis chip photo etched mask with above-mentioned photo etched mask method for making, its minimum feature is at 20um, raceway groove reduces greatly in little live width (20um～30um part) roughness, and trench edges is level and smooth, satisfies general analysis test needs.
This photo etched mask had both kept the performance that conventional photo etched mask is reusable, the figure fineness is high, had taken into account the fast advantage of simplicity of design, low cost and fabrication cycle again.
The present invention not only manufacture craft is simple, with low cost, and is suitable for the preparation of other minimum feature at the above photo etched mask of 20um.
Embodiment
Below in conjunction with specific embodiment technical scheme of the present invention is further described.
Embodiment
Photo etched mask is made film film mask and chromium glass mask by the following method respectively successively: film film is made by laser photocomposing machine, be subjected to general laser photocomposing machine minimum resolution restriction, resolution is printed when being lower than 30um film pattern edge roughness can occur, is difficult to use.But it is on glass that film is fixed on ultraviolet light, makes photo etched mask.Commercial chromium plating glass is coated with spin coating method is covered with the thick photoresist of 2～40um, concrete thickness need take all factors into consideration graphic style and minimum feature is considered, the preferential little live width pattern of complexity of selecting is preferentially selected the thin glue with 2～10um, simple general the selection with the thick glue of 30～40um of pattern.The photo etched mask that makes with film carries out photoetching to it, and film face pattern face is close to the chromium plating glass that scribbles photoresist.With energy is 15mW/cm
2The ultraviolet photoetching 4～50 seconds of 365nm wave band, use developing liquid developing, nitrogen dries up, 90 ℃～130 ℃ soft bakings 3～10 minutes (preferred 110 ℃～120 ℃) are repaired coarse part automatically by the softening back of photoresist autonomous dress effect and are made the lithographic pattern edge-smoothing.Microphotograph shows that the lithographic pattern edge is greatly improved after soft baking, resolution can be brought up to the 20um live width.Then remove the chromium layer that does not have the photoresist protection again in the chromium corrosive liquid, dispose residual photoresist with adhesive remover, cleaning, drying makes the standard photo etched mask.
The photo etched mask of Zhi Zuoing is used in the biochemical analysis chip in this way, and the minimum feature of the biochemical analysis chip of making is at 20um, and trench edges is level and smooth at little live width place, can satisfy general analysis test needs fully.
Claims (5)
1; a kind of low cost simple is made the method for photo etched mask; it is characterized in that: the high resolving power film that has detail of design of film output is pasted on the quartz glass as initial photo etched mask; the pattern face of the photo etched mask that will make with film is close to the chromium plating glass that scribbles photoresist again; utilize photoetching technique to scribbling the chromium glass exposure of photoresist then; develop; after drying up; make the photoresist figure level and smooth through soft baking; eliminate the coarse of the tiny pattern of script film film edge; remove the crome metal thin layer that does not have the photoresist protection on the chromium glass with wet etching again, remove residual photoresist at last and promptly obtain the standard photo etched mask.
2, photo etched mask method for making according to claim 1 is characterized in that: the photoresist thickness on chromium glass surface is 2～40um.
3, photo etched mask method for making according to claim 1 and 2, it is characterized in that: to the chromium glass energy is 10～20mW/cm
2, 300～480nm wave band ultraviolet photoetching, the time shutter is 2～90 seconds.
4, photo etched mask method for making according to claim 1 and 2 is characterized in that: the temperature of soft baking is 90 ℃～130 ℃, and the time is 3～10 minutes.
5, photo etched mask method for making according to claim 4 is characterized in that: the temperature of soft baking is preferably 110 ℃～120 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510019949 CN1776523A (en) | 2005-12-05 | 2005-12-05 | Low cost simple method for making photo etched mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510019949 CN1776523A (en) | 2005-12-05 | 2005-12-05 | Low cost simple method for making photo etched mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1776523A true CN1776523A (en) | 2006-05-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510019949 Pending CN1776523A (en) | 2005-12-05 | 2005-12-05 | Low cost simple method for making photo etched mask |
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| CN (1) | CN1776523A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102129971A (en) * | 2010-12-24 | 2011-07-20 | 长治虹源科技晶体有限公司 | Method and system for etching graphical sapphire substrate |
| CN101764053B (en) * | 2008-12-25 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | Photoetching method |
| CN102192988A (en) * | 2010-03-05 | 2011-09-21 | 北京同方光盘股份有限公司 | Substrate mould for microfluidic chip and manufacturing method thereof |
| CN102651304A (en) * | 2011-02-23 | 2012-08-29 | 上海华虹Nec电子有限公司 | Method for improving wet-method metal-etching process |
| CN103604775A (en) * | 2013-07-04 | 2014-02-26 | 丹阳聚辰光电科技有限公司 | Microbiological detection instrument based on micro-fluidic chip and SPR detection method thereof |
| CN104681417A (en) * | 2013-11-27 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | Forming method of semiconductor device and grid electrode |
| CN104681416A (en) * | 2013-11-27 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | Forming method for semiconductor device and grid electrode |
| CN105842981A (en) * | 2016-05-03 | 2016-08-10 | 岭南师范学院 | Preparation method of low-cost precision chip mold lithography mask |
| CN106754247A (en) * | 2016-12-12 | 2017-05-31 | 中国科学院微电子研究所 | Tray and processing technology thereof |
| CN109188859A (en) * | 2018-10-31 | 2019-01-11 | 信利光电股份有限公司 | A kind of manufacture craft of mask plate |
-
2005
- 2005-12-05 CN CN 200510019949 patent/CN1776523A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101764053B (en) * | 2008-12-25 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | Photoetching method |
| CN102192988A (en) * | 2010-03-05 | 2011-09-21 | 北京同方光盘股份有限公司 | Substrate mould for microfluidic chip and manufacturing method thereof |
| CN102192988B (en) * | 2010-03-05 | 2013-07-17 | 北京同方光盘股份有限公司 | Substrate mould for microfluidic chip and manufacturing method thereof |
| CN102129971A (en) * | 2010-12-24 | 2011-07-20 | 长治虹源科技晶体有限公司 | Method and system for etching graphical sapphire substrate |
| CN102129971B (en) * | 2010-12-24 | 2012-11-07 | 长治虹源科技晶体有限公司 | Method and system for etching graphical sapphire substrate |
| CN102651304A (en) * | 2011-02-23 | 2012-08-29 | 上海华虹Nec电子有限公司 | Method for improving wet-method metal-etching process |
| CN103604775A (en) * | 2013-07-04 | 2014-02-26 | 丹阳聚辰光电科技有限公司 | Microbiological detection instrument based on micro-fluidic chip and SPR detection method thereof |
| CN103604775B (en) * | 2013-07-04 | 2016-08-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Micro-fluid chip-based microorganism detection instrument and SPR detection method thereof |
| CN104681417A (en) * | 2013-11-27 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | Forming method of semiconductor device and grid electrode |
| CN104681416A (en) * | 2013-11-27 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | Forming method for semiconductor device and grid electrode |
| CN105842981A (en) * | 2016-05-03 | 2016-08-10 | 岭南师范学院 | Preparation method of low-cost precision chip mold lithography mask |
| CN106754247A (en) * | 2016-12-12 | 2017-05-31 | 中国科学院微电子研究所 | Tray and processing technology thereof |
| CN109188859A (en) * | 2018-10-31 | 2019-01-11 | 信利光电股份有限公司 | A kind of manufacture craft of mask plate |
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