201036198 六、發明說明： 【發明所屬之技術領域】 * 本發明涉及一種發光二極體，特別係指一種可 - 輸出不同色溫之發光二極體。 【先前技術】 作為一種新型之光源，發光二極體憑藉其節 能、環保、高效等特點，已被應用到越來越多之領 〇 域當中’大有取代傳統光源之趨勢。 發光二極體晶片係發光二極體内最為重要之元 件，它決定了發光二極體之發光亮度及出光顏色。 在通用照明領域，為了獲取照明所必需之白光，目 2最為普遍之方法是將一藍光晶片與黃色螢光粉組 。使用’藉由混光效應而產生白光，即，晶片受電 流所驅動而發出藍光之後，一部分藍光激發螢光粉 使之發出黃光，這部分黃光與剩餘之藍光混合而形 ^ 成所需之白光。 _眾所周知，不同色溫之光線之穿透能力各有不 同其中岗色溫（>8000k)之藍光波長最短，其穿透能 力最弱，而低色溫（<35〇〇κ)之橙光波長最長其穿 透能：最強。因此’對於戶外燈而言，在較為晴朗 之天氣，一般會需要偏藍之白光，以獲取較好之照 明效果；而當天氣非常潮濕（如下雨或起霧）時， 則一般會需要偏黃之白光，以使光線能夠穿透水滴 3 201036198 或霧氣而傳播較遠之距離，以增強光線之可見性。 惟，由於上述發光二極體僅能發出同一色溫之光 * 導致絲料發光二極體之燈具之照明效果非 * 常單一化，無法同時適應多種不同天氣之需求。 【發明内容】 有鑒於此，實有必要提供一種可輸出不同色溫 之發光二極體。 Ο 一種發光二極體，其包括一發光二極體晶片、 一承載晶片之基座、與晶片配合之螢光粉及一包封 晶片及螢光粉之封罩，該發光二極體還包括另一晶 片及與該另一晶片配合之另—螢光粉，該另一營光 粉之量多於該螢光粉。 與習知技術相比，由於本發明之發光二極體内 設有二晶片，且每一晶片均配備有不同量之螢光 粉，因此，每一晶片所發出之光線被螢光粉吸收之 〇 輊度不同，從而使藉由螢光粉受激發所產生之光線 與晶片發出之剩餘光線所混合產生之混光具備不同 之色溫。故而，本發明之發光二極體可同時發出不 同色溫之光線，以適應各種天氣狀況之需求。 【實施方式】 請參閱圖1’示出了本發明第一實施例之發光二 極體。該發光二極體包括一基座110、一粘結在基座 110上之發光二極體晶片120、將晶片120電性連接 201036198 至基座110之二金線140及一密封晶片12〇及金線 140之封罩130。 ‘ 基座110包括-碗狀之底座（圖未標）及插設 ’ 於底座内之三金屬柱160。該底座由熱導性良好且電 、、’邑緣之材料製成m底座之上部開設一碗狀 之凹部112，以容置晶片12〇。該凹部112之底部為 一平坦之表面，以穩定地支撐晶片120。該三金屬柱 ❹ 16G之頂部均與凹部112之底部齊平，以充分暴露於 凹部112内。位於左右_之二金屬柱⑽作用相 當於連通發光二極體晶片120與外部電路（圖未示） 間之引腳，其頂面用於供金線14〇黏接，以在發光 二極體内部形成-㈣通路；其底面用於與電路板 (圖未示）上之導電軌跡相接觸，以將電流輸入進 晶片120内。位於中部之金屬柱16〇僅起一熱導體 之作用，其頂面用於供晶片120貼設，以將晶片12〇 Ο 所產生之熱量傳導至發光二極體外部。該中部之金 屬柱160與兩侧之二金屬柱16〇藉由底座隔開，以 避免電性導通。該中部之金屬柱16〇之直徑大於兩 侧之金屬柱160之直徑，以最大限度地對晶片12〇 進行散熱。另外，應當指出，該中部之金屬柱16〇 並非發光二極體中之必備元件，當晶片12〇之功率 較小以至於發熱量有限時，中部之金屬柱16〇可省 去以節約成本。 晶片120藉由銀膠17〇黏接至中部金屬柱 201036198 之頂面’其頂部之左右兩侧分別形成二錯落分佈之 電極122、124。晶片120之周圍塗敷有一層螢光粉 150，以對晶片120發出之光線進行修正，使輸出至 封罩130外部之光線可獲得一較為理想之光色。201036198 VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode, and more particularly to a light-emitting diode that can output different color temperatures. [Prior Art] As a new type of light source, LEDs have been applied to more and more of them in the field of energy saving, environmental protection, and high efficiency, which has a tendency to replace traditional light sources. The light-emitting diode chip is the most important component in the light-emitting diode, which determines the light-emitting brightness and light-emitting color of the light-emitting diode. In the field of general illumination, in order to obtain the white light necessary for illumination, the most common method is to combine a blue light wafer with a yellow phosphor powder. Using white light by the light mixing effect, that is, after the wafer is driven by current to emit blue light, a part of the blue light excites the fluorescent powder to emit yellow light, and this part of the yellow light is mixed with the remaining blue light to form a desired White light. _ It is well known that the light penetration ability of light of different color temperatures is different. Among them, the color temperature of the color (>8000k) is the shortest, and the penetration ability is the weakest, while the low color temperature (<35〇〇κ) has the longest wavelength of orange light. Its penetration energy: the strongest. Therefore, for outdoor lights, in sunny weather, blue light is generally required to obtain better lighting effects. When the weather is very humid (such as rain or fog), yellowing is generally required. White light, so that light can penetrate the water droplets 3 201036198 or fog to spread a long distance to enhance the visibility of light. However, since the above-mentioned light-emitting diodes can only emit light of the same color temperature*, the lighting effect of the lamps of the wire-emitting diodes is not always singular, and cannot meet the needs of many different weathers at the same time. SUMMARY OF THE INVENTION In view of the above, it is necessary to provide a light-emitting diode that can output different color temperatures.发光 A light-emitting diode comprising a light-emitting diode chip, a substrate carrying a wafer, a phosphor powder matched with the wafer, and an envelope of the packaged wafer and the phosphor powder, the light-emitting diode further comprising Another wafer and another phosphor powder cooperating with the other wafer, the other camp powder is more than the phosphor powder. Compared with the prior art, since the light-emitting diodes of the present invention are provided with two wafers, and each wafer is provided with different amounts of phosphor powder, the light emitted by each wafer is absorbed by the phosphor powder. The brightness is different, so that the mixed light generated by the excitation of the phosphor powder and the residual light emitted by the wafer has different color temperatures. Therefore, the light-emitting diode of the present invention can simultaneously emit light of different color temperatures to meet the needs of various weather conditions. [Embodiment] Referring to Figure 1', a light-emitting diode according to a first embodiment of the present invention is shown. The light emitting diode includes a pedestal 110, a light emitting diode chip 120 bonded to the susceptor 110, a second gold wire 140 electrically connecting the chip 120 to the susceptor 110, and a sealing wafer 12 The cover 130 of the gold wire 140. ‘The base 110 includes a bowl-shaped base (not shown) and three metal posts 160 interposed in the base. The base is made of a material having good thermal conductivity and made of electric material, and the upper portion of the base is opened with a bowl-shaped recess 112 for accommodating the wafer 12A. The bottom of the recess 112 is a flat surface to stably support the wafer 120. The tops of the three metal pillars G 16G are flush with the bottom of the recess 112 to be sufficiently exposed to the recesses 112. The metal pillars (10) located on the left and right sides are equivalent to the pins connecting the LEDs 120 and the external circuits (not shown), and the top surface thereof is used for bonding the gold wires 14 to the light emitting diodes. Internally, a (four) via is formed; the bottom surface is for contacting a conductive trace on a circuit board (not shown) to input current into the wafer 120. The metal pillar 16 located at the center functions only as a heat conductor, and the top surface thereof is used for the wafer 120 to be attached to conduct heat generated by the wafer 12 to the outside of the light-emitting diode. The central metal pillar 160 is separated from the two metal pillars 16 on both sides by a base to avoid electrical conduction. The diameter of the central metal post 16 is larger than the diameter of the metal post 160 on both sides to maximize heat dissipation to the wafer 12A. In addition, it should be noted that the central metal pillar 16 is not an essential component in the light-emitting diode. When the power of the wafer 12 is small so that the heat generation is limited, the metal pillar 16 in the middle can be omitted to save cost. The wafer 120 is adhered to the top surface of the central metal pillar 201036198 by the silver paste 17 ’, and the electrodes 122, 124 are respectively disposed on the left and right sides of the top. A layer of phosphor powder 150 is applied around the wafer 120 to correct the light emitted from the wafer 120, so that light output to the outside of the envelope 130 can obtain a desired light color.
一金線140分別將晶片12〇之二電極122、124 連接至兩側之二金屬柱16〇之頂面。每一金線14〇 均被設置為螺旋狀，以形成一微型電感。憑藉電感 “阻交流，通直流，，之特性，該二金線14〇可有效遏制 由於電路之瞬間閉合而產生之電流脈衝，從而保護 晶片120。此外，在電路閉合之後，由於電流趨於穩 定而變成直流’其可不受金線14〇所阻礙而輸入： 晶片120内，從而驅動晶片12〇持續發光。另外， 相比於傳統之弧線式之纽，由於採用了螺旋式之 構造，本發明之發光二極體中之金線⑽可以更加 有效地抵禦料謂之擠壓而不至於斷裂，以確保 發光二極體之正常運作。#然，對於某些類型之覆 晶型晶片（圖未示）’由於其晶片之二電極為直接固 定至基座110之二對應之金屬柱⑽上因此無須 金線14G即可將晶片與基座UG電性導通。另外，、 m«狀之金線14Q僅是—種較佳之 選擇，普通之弧形之錢（圖未示）㈣樣可適用 於本發明之發光二極體中。 6 201036198 出一弧狀之部分，從而在基座11〇上形成一凸透鏡。 由此，封罩130不僅可以起到密封晶片12〇及金線 、〜之作用，還可同時對晶片12〇之光線進行調整， . 以獲得良好之出光效果。對於某些類型之發光二極 體而言，其封罩130與基座11〇係一體成型，因此 該種發光二極體之基座110亦相當於封罩13〇之一 部分。 ❹ 如圖2所示，其為本發明第二實施例之發光二 極體在圖2中，僅有晶片120、基座110、封罩13〇 及螢光粉150c被示出，其他元件，如金線14〇及金 屬柱160均被省去以方便觀察。該第二實施例之各 元件與第一實施例之各元件均相同，僅數量有所變 化。該發光二極體在基座11〇上設置有二相同之晶 片120及二分別塗敷於晶片12〇上之螢光粉l5〇c。 本發明中该二晶片120均為發射藍光之或 O InGaN半導體發光晶片，螢光粉150c則均為黃色之 在乙紹石榴石螢光粉（YAG)或矽酸鹽基底 (silicated-based)螢光粉，可以理解地，其他可發出藍 光之半導體發光晶片及可受藍光激發而發出黃光之 螢光粉亦同樣適用於本發明之發光二極體中。該二 晶片120之周圍所塗敷之螢光粉i5〇c量不同，其中 左側螢光粉150c之濃度與右側螢光粉i5〇c之濃度相 同，但厚度小於右側螢光粉150c之厚度。藉由此種 差異化之設計’左側晶片120所發出之藍光僅有小 7 201036198 部分被螢光粉150c吸收而激發成黃光，繼而與剩餘 之大部分藍光混合形成高色溫之偏藍之白光；右側 晶片120則剛好相反，其所發出之大部分藍光均被 螢光粉150c轉化成黃光，從而導致混合之白光偏向 於低色溫之黃色。該二晶片120分別藉由不同之電 路（圖未示）被獨立地控制，以根據不同之天氣條 件將發光二極體切換至不同之色溫，比如，當天氣 比較晴朗時’導通左侧之發光二極體晶片12〇使發 光一極體發出偏藍之白光；當天氣由於起霧或下雨 而非常潮濕時，導通右侧之發光二極體晶片12〇使 發光二極體發出偏黃之白光。 上述二螢光粉15〇c係直接塗敷於晶片12〇表 面，由於晶片120尺寸太小，導致螢光粉15〇c不易 塗抹均勻，進而影響二晶片12〇間不同色溫之調配 關係。因此，為克服該問題，本發明還提供了另一 種不同結構之發光二極體。參閱圖3,示出了本發明 第三實施例之發光二極體，其與第二實施例之區別 在於二螢光粉150c分別被首先封入不同尺寸大小之 二分離之另一封罩19〇d内，然後再藉由一更大之封 罩130d密封起來。由於封罩侧材料（環氧樹腊） 之熱塑性，螢光粉可在另一封罩190d射入到基座110 上之前摻入到還處於熔化狀態之另一封罩i9〇d中， 然後藉域拌均勻地分佈在另—封罩携d内，從而 克服上述塗抹不均之問題。在該第三實施例中，該 8 201036198 二另一封罩19〇d内之螢光粉150c濃度相同，但由 於二另一封罩19〇d大小不同’導致左右兩側營光粉 150c之量亦有區別。封罩i3〇d須待另一封罩19〇d 硬化之後再射入至基座11〇上’以防止對另一封罩 190d之成型造成干擾。封罩i3〇d可以採用與另一封 罩190d相同之材料製成，也可採用較另一封罩19〇d 折射率更低之材料製成’從而增強發光二極體之整 體出光效果。 當然，由於另一封罩190d之尺寸遠大於晶片12〇 之尺寸’其可以為螢光粉150c提供充分之塗敷區 域，從而使上述螢光粉15〇c可均勻地塗敷於其表 面如圖4所示，其為本發明之第四實施例之發光 二極體。在該實施例中，二濃度相同之螢光粉l5〇c 被以相同之厚度直接塗抹於二另一封罩19〇d外表 面，然後再藉由封罩13〇d密封起來，此時另一封罩 190d内部未包含有任何之螢光粉15〇c。由於二另一 封罩190d之大小不同，即使二螢光粉15〇c之濃度 及厚度一致，其量亦仍會有所差別，從而確保發光 一極體此夠產生不同之色溫。 可以理解地，上述不同量之螢光粉還可藉 由其他不同之方式實現，如圖5所示之第五實施例， 其與第二實施例之結構基本類似，但其二螢光粉 150f被設置為以厚度相同但濃度不同之方式環繞於 各自晶片120之周圍。 9 201036198 综上所述，本發明確已符合發明專利之要件，遂 依法提出專利申請。，准，以上所述者僅為本發明之 • 較佳實施方式’自不能以此限制本案之中請專利範 圍舉凡熟悉本案技藝之人士援依本發明之精神所 作之等效修飾或變化，皆應涵蓋於以下申請專利範 圍内。 【圖式簡單說明】 〇 圖1係本發明第一實施例之發光二極體之截面 圖。 圖2係本發明第二實施例之發光二極體之戴面 圖。 圖3係本發明第三實施例之發光二極體之截面 〇 圖 圖 圖4係本發明第四實施例之發光二極體之截面 圖5係本發明第五實施例之發光二極體之截面 【主要元件符號說明 基座 晶片 封罩 螢光粉 銀膠 另一封罩 110 120 130 凹部 電極 導線 150、15〇c、150f 金屬柱 170 封罩 190d 112 122、124 140 160 130dA gold wire 140 connects the two electrodes 122, 124 of the wafer 12 to the top surface of the two metal pillars 16 on both sides. Each gold wire 14 turns is set in a spiral shape to form a miniature inductor. By virtue of the inductance "resistance of alternating current, direct current,", the two gold wires 14 〇 can effectively suppress the current pulse generated by the instantaneous closing of the circuit, thereby protecting the wafer 120. In addition, after the circuit is closed, the current tends to be stable. And it becomes a direct current 'which can be input without being hindered by the gold wire 14 :: inside the wafer 120, thereby driving the wafer 12 〇 to continuously emit light. In addition, compared with the conventional curved type, the present invention adopts a spiral structure. The gold wire (10) in the light-emitting diode can be more effectively resisted from the extrusion and not broken, to ensure the normal operation of the light-emitting diode. #然, For some types of flip-chip wafers Since the two electrodes of the wafer are directly fixed to the corresponding metal pillars (10) of the susceptor 110, the wafer and the susceptor UG can be electrically connected without the gold wire 14G. In addition, the m-like gold wire 14Q is only a preferred choice, and the ordinary curved money (not shown) (4) can be applied to the light-emitting diode of the present invention. 6 201036198 An arc-shaped portion is thus formed on the pedestal 11 form Therefore, the cover 130 can not only function to seal the wafer 12 and the gold wire, but also adjust the light of the wafer 12 at the same time to obtain a good light-emitting effect. For some types of light-emitting In the case of the diode, the cover 130 is integrally formed with the base 11 so that the base 110 of the light-emitting diode is also equivalent to one part of the cover 13 ❹ as shown in FIG. In the second embodiment of the present invention, only the wafer 120, the susceptor 110, the enclosure 13 and the phosphor powder 150c are shown, and other components such as the gold wire 14 and the metal pillar 160 are shown. It is omitted for convenience of observation. The components of the second embodiment are the same as the components of the first embodiment, and only vary in number. The light-emitting diodes are provided with two identical wafers 120 on the susceptor 11A. And the phosphor powder l5〇c respectively coated on the wafer 12〇. In the present invention, the two wafers 120 are all blue-emitting or O InGaN semiconductor light-emitting chips, and the fluorescent powder 150c is yellow in the Stone fluorescing powder (YAG) or silicated-based phosphor powder In other words, other semiconductor light-emitting chips that emit blue light and phosphors that emit yellow light when excited by blue light are also suitable for use in the light-emitting diode of the present invention. The phosphor powder i5 coated around the two wafers 120 The amount of 〇c is different, wherein the concentration of the left fluorescent powder 150c is the same as the concentration of the right fluorescent powder i5〇c, but the thickness is smaller than the thickness of the right fluorescent powder 150c. By this differentiated design, the left wafer 120 is emitted. The blue light is only small 7 201036198 part is absorbed by the fluorescent powder 150c to be excited into yellow light, and then mixed with most of the remaining blue light to form a high color temperature of bluish white light; the right side wafer 120 is just the opposite, most of which is emitted The blue light is converted into yellow light by the phosphor powder 150c, resulting in the mixed white light being biased toward the yellow of the low color temperature. The two chips 120 are independently controlled by different circuits (not shown) to switch the light-emitting diodes to different color temperatures according to different weather conditions, for example, when the weather is relatively clear, the light on the left side is turned on. The diode chip 12 causes the light-emitting body to emit a bluish white light; when the weather is very humid due to fogging or rain, turning on the right side of the light-emitting diode chip 12 causes the light-emitting diode to be yellowish. White light. The two phosphor powder 15〇c is directly applied to the surface of the wafer 12, and since the size of the wafer 120 is too small, the phosphor powder 15〇c is not easily applied uniformly, thereby affecting the matching relationship of the different color temperatures between the two wafers 12 . Therefore, in order to overcome this problem, the present invention also provides a light-emitting diode of another different structure. Referring to Fig. 3, there is shown a light-emitting diode according to a third embodiment of the present invention, which is different from the second embodiment in that two phosphor powders 150c are respectively sealed into another cover 19 of two different sizes. Within d, it is then sealed by a larger enclosure 130d. Due to the thermoplasticity of the cover side material (epoxy wax), the phosphor can be incorporated into another cover i9〇d which is still in a molten state before the other cover 190d is incident on the base 110, and then The domain mixing is evenly distributed in the other cover to carry the problem, thereby overcoming the problem of uneven application. In the third embodiment, the phosphor powder 150c in the other cover 19〇d is the same concentration, but the size of the other cover 19〇d is different, resulting in the left and right sides of the camping powder 150c. There is also a difference in quantity. The cover i3〇d is required to be incident on the base 11〇 after the other cover 19〇d is hardened to prevent interference with the formation of the other cover 190d. The cover i3〇d may be made of the same material as the other cover 190d, or may be made of a material having a lower refractive index than the other cover 19〇d, thereby enhancing the overall light-emitting effect of the light-emitting diode. Of course, since the size of the other cover 190d is much larger than the size of the wafer 12', it can provide a sufficient coating area for the phosphor 150c, so that the above-mentioned phosphor 15c can be uniformly applied to the surface thereof. Fig. 4 shows a light-emitting diode according to a fourth embodiment of the present invention. In this embodiment, the phosphor powders 15c of the same concentration are directly applied to the outer surfaces of the other covers 19〇d with the same thickness, and then sealed by the cover 13〇d, at this time The inside of the cover 190d does not contain any phosphor powder 15〇c. Since the size of the other cover 190d is different, even if the concentration and thickness of the two phosphors 15c are the same, the amount will be different, thereby ensuring that the light-emitting body has a different color temperature. It can be understood that the above different amounts of phosphor powder can also be realized by other different methods, such as the fifth embodiment shown in FIG. 5, which is basically similar to the structure of the second embodiment, but the second phosphor powder 150f It is arranged to surround the respective wafers 120 in the same thickness but different concentrations. 9 201036198 In summary, the present invention has indeed met the requirements of the invention patent, and 提出 filed a patent application according to law. The above description is only the preferred embodiment of the present invention. It is not intended to limit the scope of the patent. Any equivalent modifications or variations made by those skilled in the art to the spirit of the present invention are It should be covered by the following patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a light-emitting diode according to a first embodiment of the present invention. Fig. 2 is a perspective view showing a light-emitting diode of a second embodiment of the present invention. 3 is a cross-sectional view of a light-emitting diode according to a third embodiment of the present invention. FIG. 4 is a cross-sectional view of a light-emitting diode according to a fourth embodiment of the present invention. FIG. 5 is a light-emitting diode according to a fifth embodiment of the present invention. Cross section [Main component symbol description Base wafer encapsulation Fluorescent powder Silver paste Another cover 110 120 130 Recessed electrode lead 150, 15〇c, 150f Metal post 170 Enclosure 190d 112 122, 124 140 160 130d