KR20140004351A - Light emitting diode package - Google Patents

Light emitting diode package Download PDF

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Publication number
KR20140004351A
KR20140004351A KR1020120071746A KR20120071746A KR20140004351A KR 20140004351 A KR20140004351 A KR 20140004351A KR 1020120071746 A KR1020120071746 A KR 1020120071746A KR 20120071746 A KR20120071746 A KR 20120071746A KR 20140004351 A KR20140004351 A KR 20140004351A
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KR
South Korea
Prior art keywords
layer
light emitting
emitting diode
diode package
dam
Prior art date
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KR1020120071746A
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Korean (ko)
Inventor
조현석
Original Assignee
엘지이노텍 주식회사
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Priority to KR1020120071746A priority Critical patent/KR20140004351A/en
Publication of KR20140004351A publication Critical patent/KR20140004351A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

An embodiment relating to a light emitting diode package can minimize a light loss caused by an optical absorption and scattering of a partition layer (20) by forming the partition layer (20) within a substrate (10) and can enhance the light flux by 10% or more by minimizing a distance (b) between a light emitting chip (60) and an upper end of a resin (80) and improving the light extraction efficiency. The light emitting diode package according to the embodiment comprises: a substrate; a partition layer formed within a recess of the substrate; a plating layer formed on the partition layer; a dam formed on the plating layer; a light emitting chip mounted on the substrate at an inner side of the dam; and the resin formed with a set height in a cavity space on an inner side of a structure made of the plating layer and the dam on the partition layer.

Description

Light Emitting Diode Package

The embodiment relates to a light emitting diode package capable of improving light extraction efficiency and luminous flux.

Light emitting diodes (LEDs) are used to produce a small number of injected carriers (electrons or holes) by using a pn junction structure of semiconductors, and by recombining the electrical energy into light energy, Diode. That is, when a forward voltage is applied to a semiconductor of a specific element, electrons and holes move through the junction between the anode and the cathode and recombine with each other. Since the electrons and holes are separated from each other, energy is smaller than that of electrons and holes. Release.

Such LEDs are being applied not only to a general display device but also to a backlight device of a lighting device or an LCD display device. In particular, LED has the advantage of low heat generation and long life due to high energy efficiency while being able to drive at a relatively low voltage, and most of the currently used technologies have been developed to provide high brightness of white light, which was difficult to implement in the past. It is expected to replace the light source device.

The conventional LED package has a structure in which a barrier layer is laminated on an upper portion of a substrate, and conducts conductive wires through wire bonding to an LED chip and emits heat by attaching a heat sink to the lower portion. However, the conventional LED package having such a structure has a problem that the light emitted from the LED chip is absorbed and scattered in the barrier layer to reduce the light efficiency and luminous flux.

Therefore, in recent years, efforts have been made to increase light efficiency by improving the structure of light emitting diodes. Meanwhile, efforts have also been made to increase light efficiency by improving the structure of light emitting device packages.

Korean Patent Publication No. 10-2006-0135498 (published: December 29, 2006)

Embodiments of the present invention provide a light emitting diode package capable of minimizing light absorption by a barrier layer and improving light extraction efficiency.

Another object of the present invention is to provide a light emitting diode package capable of minimizing light loss caused by light absorption and scattering by the barrier layer.

In addition, another technical problem to be achieved by the embodiment is to propose a light emitting diode package that can increase the light extraction efficiency and improve the luminous flux by reducing the height of the barrier layer to minimize the distance between the top of the light emitting chip and the resin material. .

The solution to the problem of the present invention is not limited to those mentioned above, and other solutions not mentioned can be clearly understood by those skilled in the art from the following description.

As a means for solving the above technical problem, the LED package of the embodiment, the substrate, the partition layer formed in the groove of the substrate, the plating layer formed on the partition layer, and the dam (Dam) formed on the plating layer And a light emitting chip mounted on the substrate inside the dam, and a resin material formed at a predetermined height in a cavity space inside a structure including the plating layer and the dam on the partition layer.

The partition wall layer includes a first adhesive sheet layer, an insulating layer formed on the first adhesive sheet, a second adhesive sheet layer formed on the polyimide film layer, and a metal thin film layer formed on the second adhesive sheet layer. It may include.

The partition layer may be spaced apart from the side surface of the groove at a predetermined interval.

The insulating layer may be composed of a polyimide film.

The metal thin film layer may be formed in a predetermined region on the second adhesive sheet layer to be in contact with the side surface of the groove. The metal thin film layer is at least one selected from the group consisting of Cu, Ag, Au, Ni, Al, Cr, Ru, Re, Pb, Cr, Sn, In, Zn, Pt, Mo, Ti, Ta, W It can be formed of a laminate layer of a metal material consisting of a metal or an alloy containing these metals.

The light emitting diode package may have a PSR (Photo Imageable Solder Resist) layer formed between the plating layer and the dam.

The outer circumferential surface of the cavity may have any one of a stepped structure, a vertical structure with respect to the bottom surface, and a structure inclined at a predetermined angle. The shape of the cavity, when viewed from above, may be formed in any one of a circle, an ellipse, and a polygon.

The light emitting chip may be one of colored LED chips including a blue LED chip, a green LED chip, a red LED chip, and a yellow LED chip, or may be configured as an ultraviolet (UV) LED chip. The light emitting chip may have any one of a vertical structure, a horizontal structure, and a flip chip structure. In addition, the light emitting chip may have a single chip or a multi-chip structure.

The resin may include at least one phosphor. The resin material may be formed of a light transmissive material including a silicone resin and an epoxy resin.

The groove of the substrate may be formed to a depth of 100 ~ 150㎛.

In addition, as a means for solving the above technical problem, the light emitting diode package of the embodiment, the substrate, the partition layer formed in the groove of the substrate, the plating layer formed on the partition layer, the PSR formed on the plating layer A photo imageable solder resist layer, a dam formed on the PSR layer, a light emitting chip mounted on the substrate inside the dam, and a plating layer and the dam on the partition layer. A resin material formed at a predetermined height in the cavity space, wherein the partition layer includes a first adhesive sheet layer, an insulating layer formed on the first adhesive sheet, and a second adhesive sheet layer formed on the polyimide film layer. And, it may be configured to include a metal thin film layer formed on the second adhesive sheet layer.

According to the embodiment, by forming the barrier layer inside the substrate, it is possible to minimize the light loss caused by the light absorption and scattering by the barrier layer.

In addition, by forming a barrier layer inside the substrate, it is possible to minimize the distance between the light emitting chip and the upper end of the resin material to increase the light extraction efficiency and to improve the luminous flux by 10% or more.

The effects of the present invention are not limited to those mentioned above, and other effects that are not mentioned will be clearly understood by those skilled in the art from the following description.

1 is a cross-sectional view of a light emitting diode package according to a first embodiment
2 is a cross-sectional view of a light emitting diode package according to a second embodiment
3 is a cross-sectional view of a light emitting diode package according to a third embodiment
4 is a cross-sectional view of a light emitting diode package according to a fourth embodiment
5 is experimental data of a light emitting diode package according to the related art.
6 illustrates experimental data of the LED package according to the first to fourth embodiments.
7 is an experimental graph comparing the luminous flux of the LED package according to the prior art and the embodiment

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

In the description of the embodiment according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

First Embodiment

1 is a cross-sectional view of a light emitting diode package according to a first embodiment.

As shown in FIG. 1, a first embodiment of the light emitting diode package 1 includes a partition layer 20 disposed in a groove 11 of a substrate 10 and a partition layer 20. The plating layer 30 formed thereon, a PSR (Photo Imageable Solder Resist) layer 40 formed on the plating layer 30, a dam 50 formed on the PSR layer 40, and the dam 50. ) A light emitting chip 60 mounted on the substrate 10 inside the wire, a wire 70 connecting the light emitting chip 60 to the plating layer 30, and the plating layer on the barrier layer 20. 30, a resin material 80 formed at a predetermined height in a cavity space inside the structure including the PSR layer 40 and the dam 50 is included.

The substrate 10 serves as a body of the light emitting diode package 1 and may be configured using a metal material, a polymer material, a resin material, a ceramic material, a silicon material, or the like.

The light emitting diode package 1 may be classified into a metal package, a plastic package, a ceramic package, a silicon package, and the like according to a material used as the substrate 10. With regard to what material to use as the substrate 10 may be selected in consideration of the heat dissipation effect, mass production potential, cost, characteristics of other components, the purpose and use of the product and other various matters. For example, when the substrate 10 is made of silicon, a package may be manufactured by stacking a multilayer, and a circuit may be mounted between the stacks. In addition, since the reflectance dependence on the emission wavelength is low and can be manufactured in an integrated form at the wafer level, there is an advantage of mass production of various types.

The substrate 10 may be made of a metal material having high reflectance such as aluminum (Al). In addition, a driving circuit (not shown) for driving the light emitting chip 60 may be mounted in the substrate 10. The driving circuit serves to drive the light emitting chip 60 to perform a desired function according to the purpose and use of the light emitting diode package 1.

The substrate 10 has a groove 11 having a predetermined depth. At this time, the depth (a) of the groove 11 may be formed to about 100 ~ 150㎛. The partition layer 20 may be disposed in the groove 11 of the substrate 10. In this case, an upper height of the barrier layer 20 may be formed to be the same as an upper height of the substrate 10.

As shown in FIG. 1, the partition layer 20 includes a first adhesive sheet layer 21, an insulating layer 22 formed on the first adhesive sheet 21, and an insulating layer 22. It may be configured to include a second adhesive sheet layer 23 formed on the metal thin film layer 24 formed on the second adhesive sheet layer 23. Here, the metal thin film layer 24 is formed in a predetermined region on the second adhesive sheet layer 23. That is, the metal thin film layer 24 is spaced apart from the sidewall of the substrate 10 by a predetermined distance so as not to contact the substrate 10.

The first adhesive sheet layer 21 may be composed of an adhesive for adhering and fixing the insulating layer 22, and the insulating layer 22 may be composed of a polyimide film. have. The second adhesive sheet layer 23 may be formed of an adhesive for adhering and fixing the metal thin film layer 24. The metal thin film layer 24 may be formed of Cu, Ag, Au, Ni, Al, Cr. Metal laminates composed of at least one metal selected from the group comprising Ru, Re, Pb, Cr, Sn, In, Zn, Pt, Mo, Ti, Ta, W or alloys containing these metals It can be formed in layers.

The plating layer 30 may be formed on the metal thin film layer 24 of the barrier layer 20. The plating layer 30 may be electrically connected to the light emitting chip 60, and may be patterned to be electrically connected to a driving circuit for driving the light emitting chip 60. That is, the plating layer 30 serves as an electric conductor connecting the light emitting chip 60 and each circuit in the light emitting diode package 1. The plating layer 30 may include an anode and a cathode electrode for driving the light emitting chip 60.

An anode and a cathode of the plating layer 30 are electrically separated from each other, and serve to supply power to the light emitting chip 60. In addition, the plating layer 30 serves to increase light efficiency by reflecting light emitted from the light emitting chip 60, and also serves as a heat dissipation to discharge heat generated from the light emitting chip 60 to the outside.

The plating layer 30 is at least one selected from the group consisting of Cu, Ag, Au, Ni, Al, Cr, Ru, Re, Pb, Cr, Sn, In, Zn, Pt, Mo, Ti, Ta, W The species of metal or these metals can be constructed using alloys.

The PSR (Photo Imageable Solder Resist) layer 40 may be disposed on the plating layer 30. The PSR layer 40 may be formed in a portion of the plating layer 30 to electrically connect the plating layer 30 to the light emitting chip 60. As a result, a part of the upper surface of the plating layer 30 is exposed.

The dam 50 may be formed on the PSR layer 40. The dam 50 performs a function of partially reflecting light emitted from the light emitting chip 60. The dam (DAM) 50 may be mainly made of a silicon-based material, and may contain Ti 2 O 3 to perform a reflection function. At this time, the content of the Ti 2 O 3 may be determined according to the degree of the dam (DAM) 50 should function as a reflector and the robustness of the dam (DAM) 50, 60% to 80% by weight May be contained.

A cavity is formed inside the structure including the plating layer 30, the PSR 40, and the dam 50 on the partition layer 20. The cavity may have a stepped structure as shown in FIG. 1, and may have a structure perpendicular to the bottom surface or inclined at a predetermined angle. If the cavity is formed in an inclined structure, the cavity may be formed in a structure in which diameter increases gradually from bottom to top. The cavity may be formed in a circular shape when viewed from above, or may be formed in an elliptical shape, a polygonal shape, or the like. In addition, the side wall formed of the PSR 40 and the dam 50 may be formed of a single structure or a combination of a plurality of structures, but is not limited thereto.

The light emitting chip 60 may be mounted on the substrate 10 in the cavity.

At least one light emitting chip 60 may be disposed, for example, a colored LED chip such as a blue LED chip, a green LED chip, a red LED chip, a yellow LED chip, or an ultraviolet (UV) LED chip may be selectively disposed. Can be. The type and number of such light emitting elements are not limited. In addition, the light emitting chip 60 may have any one of a vertical structure, a horizontal structure, and a flip chip structure.

After mounting the light emitting chip 60 in the cavity, the light emitting chip 60 and the plating layer 30 are bonded by a wire 70 to be electrically connected to each other. In this case, the bonding of the wire 70 may be configured when the light emitting chip 60 has a vertical structure or a horizontal structure, and when the light emitting chip 60 has a flip chip structure, the wire ( The light emitting chip 60 may be directly mounted on a plating layer (not shown) formed on the substrate 10 without using 70.

A resin material 80 forming a light emitting surface may be formed in a cavity surrounded by the dam 50. In this case, the resin 80 may be formed at a predetermined height in the inner space of the cavity, and may be formed around the light emitting chip 60. And the upper side surface of the resin material 80 may be formed flat. The resin 80 may use a transparent silicone or epoxy material, and at least one phosphor may be added to the resin 80.

When the light emitting chip 60 is a blue light emitting chip, phosphors included in the light-transmitting resin constituting the light emitting surface may include garnet-based (YAG, TAG), silicate-based, nitride-based and oxy-based. It may include at least one or more of the nitride (Oxynitride) system.

On the other hand, natural light (white light) can be realized by including only the yellow-based phosphor in the light-transmissive resin, but may further include a green-based phosphor or a red-based phosphor to improve the color rendering index and reduce the color temperature.

In addition, when various kinds of phosphors are mixed in the light-transmitting resin, the proportion of the phosphor to be added according to the color of the phosphor may be more green-based phosphors than red-based phosphors, and yellow-based phosphors may be used more than green-based phosphors.

The yellow phosphor is a garnet-based YAG, silicate-based, oxynitride-based, the green phosphor is used a silicate-based, oxynitride-based, the red phosphor is used a nitride Can be.

In addition to mixing various kinds of phosphors in the light-transmissive resin, a layer having a red phosphor, a layer having a green phosphor, and a layer having a yellow phosphor may be separately divided.

In addition, a lens (not shown) may be disposed on the resin material 80, but is not limited thereto. The lens may be attached on the resin material 80 or on the sidewall, or manufactured by a transfer molding method.

The light emitting diode package 1 exemplifies a chip on bonding (COB) structure in which the light emitting chip 60 is directly die-bonded and wire bonded to the substrate 10 for electrical connection. have.

In the first embodiment of the LED package 1 having the above structure, the partition wall layer 20 is formed in the groove 11 of the substrate 10 to thereby absorb light by the partition layer 20 and The light loss caused by scattering can be minimized, and the light extraction efficiency can be improved by minimizing the distance (b) between the light emitting chip 60 and the resin material 80, thereby improving the luminous flux by 10% or more. Can be.

Second Embodiment

2 is a cross-sectional view of a light emitting diode package according to a second embodiment.

As shown in FIG. 2, the second embodiment of the light emitting diode package 100 is disposed in the groove 111 of the substrate 110 and spaced apart from the sidewall of the groove 111 by a predetermined distance. A barrier layer 120, a plating layer 130 formed on the barrier layer 120, a PSR layer 140 formed on the plating layer 130, and a dam formed on the PSR layer 140. 150, a light emitting chip 160 mounted on the substrate 110 inside the dam 150, a wire 170 connecting the light emitting chip 160 and the plating layer 130, and The barrier layer 120 includes a resin material 180 formed at a predetermined height in a cavity space inside the structure including the plating layer 130, the PSR layer 140, and the dam 150.

Here, as shown in FIG. 2, the barrier layer 120 includes a first adhesive sheet layer 121, an insulating layer 122 formed on the first adhesive sheet 121, and the insulating layer 122. ) And a metal thin film layer 124 formed on the second adhesive sheet layer 123.

The light emitting diode package 100 of the second embodiment includes the first adhesive sheet layer 121, the insulating layer 122, the second adhesive sheet layer 123, which constitute the partition layer 120. The metal thin film layer 124 has the same size, and the partition layer 120 is spaced apart from the side surface of the groove 111 of the substrate 110 by a predetermined distance from the light emitting diode package 1 of the first embodiment. )

The partition layer 120, the plating layer 130, the PSR layer 140, the dam 150, the light emitting chip 160, the wire 170, and the resin material of the second embodiment. 180, the barrier rib layer 20, the plating layer 30, the PSR layer 40, the dam 50, the light emitting chip 60, and the wire 70 of the first embodiment. , The material and the function of the resin 80 is the same.

According to the second embodiment of the LED package 100 having the structure, the partition wall layer 120 is formed in the groove 111 of the substrate 110 to thereby absorb light by the partition layer 120. The light loss caused by scattering can be minimized, and the light extraction efficiency can be improved by minimizing the distance (b) between the light emitting chip 160 and the top of the resin material 180 to improve the luminous flux by 10% or more. Can be.

Third Embodiment

3 is a cross-sectional view of the LED package according to the third embodiment.

As shown in FIG. 3, the third embodiment of the light emitting diode package 200 is disposed in the groove 211 of the substrate 210 and spaced apart from the side surface of the groove 111 by a predetermined distance. The partition layer 220, an insulating layer 290 formed between the side surface of the partition layer 220 and the side surface of the groove 111, a plating layer 230 formed on the partition layer 220, and the plating layer. A PSR layer 240 formed on the 230, a dam 250 formed on the PSR layer 240, and a light emitting chip mounted on the substrate 210 inside the dam 250. 260, a wire 270 connecting the light emitting chip 260 and the plating layer 230, the plating layer 230, the PSR layer 240, and the dam on the partition layer 220. It includes a resin material 280 formed to a predetermined height in the cavity space inside the structure consisting of (250).

As shown in FIG. 3, the partition layer 220 includes a first adhesive sheet layer 221, an insulating layer 222 formed on the first adhesive sheet 221, and the insulating layer 222. ) And a metal thin film layer 224 formed on the second adhesive sheet layer 223.

The light emitting diode package 200 of the third embodiment may include the first adhesive sheet layer 221, the insulating layer 222, the second adhesive sheet layer 223, which constitute the partition layer 220. The metal thin film layer 224 has the same size, and the partition layer 220 is spaced apart from the side surface of the groove 211 of the substrate 210 by a predetermined distance, and the side surface of the partition layer 220 The insulating layer 290 is formed between the sidewalls of the groove 111 and the light emitting diode package 1, 100 of the first and second embodiments.

The partition layer 220, the plating layer 230, the PSR layer 240, the dam 250, the light emitting chip 260, the wire 270, and the resin material of the third embodiment. Reference numeral 280 denotes the barrier layer 20, the plating layer 30, the PSR layer 40, the dam 50, the light emitting chip 60, and the wire 70 of the first embodiment. , The material and the function of the resin 80 is the same.

According to a third embodiment of the LED package 200 having the structure, the partition wall layer 220 is formed in the groove 211 of the substrate 210 to thereby absorb light by the partition layer 220. The light loss caused by scattering can be minimized, and the light extraction efficiency can be improved by minimizing the distance (b) between the top of the light emitting chip 260 and the resin material 280 to improve the luminous flux by 10% or more. Can be.

Fourth Embodiment

4 is a cross-sectional view of a light emitting diode package according to a fourth embodiment.

As shown in FIG. 4, the light emitting diode package 300 includes a barrier rib layer 320 disposed in the groove 311 of the substrate 310 and a barrier rib layer 320 on the barrier rib layer 320. The formed plating layer 330, the PSR layer 340 formed on the plating layer 330, a dam 350 formed on the PSR layer 340, and the substrate inside the dam 350. A light emitting chip 360 mounted on the 310, a wire 370 connecting the light emitting chip 360 and the plating layer 330, the plating layer 330, and the PSR on the partition layer 320. The resin material 380 is formed at a predetermined height in the cavity space inside the structure formed of the layer 340 and the dam 350.

Here, the partition layer 320 may be manufactured by injection molding into a structure, as shown in FIG. In this case, the partition layer 320 may be made of an insulating material.

In the LED package 300 of the fourth embodiment, the partition layer 320 injection-molded into a structure is disposed in the groove 311 of the substrate 310 in the first to third embodiments. Different from the light emitting diode package (1,100,200).

The partition layer 320, the plating layer 330, the PSR layer 340, the dam 350, the light emitting chip 360, the wire 370, and the resin material of the fourth embodiment. Reference numeral 380 is the barrier layer 20, the plating layer 30, the PSR layer 40, the dam 50, the light emitting chip 60, and the wire 70 of the first embodiment. , The material and the function of the resin 80 is the same.

In the fourth embodiment of the LED package 300 having the above structure, the partition wall layer 320 is formed in the groove 311 of the substrate 310 to thereby absorb light by the partition layer 320. The light loss caused by scattering can be minimized, and the light extraction efficiency can be improved by minimizing the distance (b) between the top of the light emitting chip 360 and the resin material 380 to improve the luminous flux by 10% or more. Can be.

Experimental Example

FIG. 5 is experimental data of a light emitting diode package according to the prior art, FIG. 6 is experimental data of a light emitting diode package according to the first to fourth embodiments, and FIG. It is an experimental graph compared.

As can be seen from the experimental data of FIGS. 5 and 6, the LED package according to the embodiment has a VF, a total flux, a color rendering index (CRI), and a luminous flux (Im / W) increased while CX, CY and CCT decreased. This is because the partition layer is formed inside the groove of the substrate, thereby minimizing the light loss caused by the light absorption and scattering by the partition layer.

In addition, by forming the barrier layer inside the groove of the substrate to minimize the distance (b) between the light emitting chip and the upper end of the resin material, the light extraction efficiency can be increased to improve the luminous flux. As can be seen in the experimental graph of FIG. 7, the light emitting diode package according to the embodiment can be seen that the luminous flux is improved by 10% or more compared with the conventional product.

In the LED package according to the embodiment configured as described above, by forming a partition layer in the substrate, it is possible to minimize the light loss caused by the light absorption and scattering by the partition layer, and the light emitting chip and the top of the resin material Since the light extraction efficiency can be improved by minimizing the distance and the luminous flux can be improved by 10% or more, the technical problem of the present invention can be solved.

Although the above description has been made with reference to the embodiments, these are merely examples and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains are not illustrated above without departing from the essential characteristics of the present embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

The LED package according to the embodiment may be applied to a lighting device, a back light unit (BLU), a semiconductor device, or the like.

1, 100, 200, 300: light emitting diode package
10, 110, 210, 310: Substrate
11, 111, 211, 311: groove
20, 120, 220, 320: partition wall
21, 121, 221, 321: first adhesive sheet layer
22, 122, 222, 322: insulation layer
23, 123, 223, 323: second adhesive sheet layer
24, 124, 224, 324: metal thin film layer
30, 130, 230, 330: plating layer (or electrode layer)
40, 140, 240, 340: PSR (Photo Imageable Solder Resist) Layer
50, 150, 250, 350: Dam
60, 160, 260, 360: light emitting chip
70, 170, 270, 370: wire
80, 180, 280, 380: Resin
290: insulation layer

Claims (16)

Board;
Barrier rib layers formed in the grooves of the substrate;
A plating layer formed on the barrier layer;
A dam formed on the plating layer;
A light emitting chip mounted on the substrate inside the dam; And
A resin material formed at a predetermined height in a cavity space inside a structure including the plating layer and the dam on the partition layer;
And a light emitting diode package.
The method of claim 1,
The partition layer is
A first adhesive sheet layer;
An insulating layer formed on the first adhesive sheet;
A second adhesive sheet layer formed on the polyimide film layer; And
A metal thin film layer formed on the second adhesive sheet layer;
And a light emitting diode package.
3. The method of claim 2,
The metal thin-
The light emitting diode package formed in a predetermined region on the second adhesive sheet layer to be in contact with the side of the groove.
3. The method of claim 2,
The metal thin-
At least one metal selected from the group consisting of Cu, Ag, Au, Ni, Al, Cr, Ru, Re, Pb, Cr, Sn, In, Zn, Pt, Mo, Ti, Ta, W or these metals Light emitting diode package formed of a laminate layer of a metallic material consisting of an alloy comprising a.
3. The method of claim 2,
The partition layer is
The LED package is spaced apart from the side of the groove at a predetermined interval.
3. The method of claim 2,
Wherein the insulating layer
A light emitting diode package consisting of a polyimide film.
The method of claim 1,
The light emitting diode package,
A light emitting diode package having a PSR (Photo Imageable Solder Resist) layer formed between the plating layer and the dam.
8. The method of claim 1 or 7,
The outer circumferential surface of the cavity,
A light emitting diode package having any one of a stepped structure, a structure perpendicular to the bottom surface, and a structure inclined at an angle.
The method of claim 8,
The shape of the cavity,
As viewed from above, a light emitting diode package formed in any one of a circle, an ellipse, and a polygon.
The method of claim 1,
The light emitting chip,
A light emitting diode package, either a blue LED chip, a green LED chip, a red LED chip, a colored LED chip including a yellow LED chip, or an ultraviolet (UV) LED chip.
The method of claim 1,
The light emitting chip,
A light emitting diode package having any one of a vertical structure, a horizontal structure, and a flip chip structure.
The method of claim 1,
The light emitting chip,
Light emitting diode package with single chip or multi-chip structure.
The method of claim 1,
The resin material,
A light emitting diode package comprising at least one phosphor.
The method according to claim 1 or 13,
The resin material,
A light emitting diode package formed of a light transmissive material including a silicone resin and an epoxy resin.
The method of claim 1,
The groove of the substrate,
Light emitting diode package having a depth of 100 ~ 150㎛.
Board;
Barrier rib layers formed in the grooves of the substrate;
A plating layer formed on the barrier layer;
A photo imageable solder resist (PSR) layer formed on the plating layer;
A dam formed on the PSR layer;
A light emitting chip mounted on the substrate inside the dam; And
And a resin material formed at a predetermined height in a cavity space inside a structure formed of the plating layer and the dam on the partition layer.
The partition layer is
A first adhesive sheet layer;
An insulating layer formed on the first adhesive sheet;
A second adhesive sheet layer formed on the polyimide film layer; And
A metal thin film layer formed on the second adhesive sheet layer;
And a light emitting diode package.
KR1020120071746A 2012-07-02 2012-07-02 Light emitting diode package KR20140004351A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101600779B1 (en) * 2014-10-29 2016-03-08 (주)오알알아이에스 a flexible LED module
KR200482494Y1 (en) 2016-01-15 2017-02-01 주식회사 이티엔커머스 Cleaning equipment
US10510936B2 (en) 2017-04-26 2019-12-17 Samsung Electronics Co., Ltd. Light emitting device package including a lead frame
CN114335284A (en) * 2021-12-30 2022-04-12 广东良友科技有限公司 Packaging structure and packaging method of edge-sealing coating LED bracket
US11677059B2 (en) 2017-04-26 2023-06-13 Samsung Electronics Co., Ltd. Light-emitting device package including a lead frame

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101600779B1 (en) * 2014-10-29 2016-03-08 (주)오알알아이에스 a flexible LED module
WO2016068603A1 (en) * 2014-10-29 2016-05-06 주식회사 오알알아이에스 Flexible led module
KR200482494Y1 (en) 2016-01-15 2017-02-01 주식회사 이티엔커머스 Cleaning equipment
US10510936B2 (en) 2017-04-26 2019-12-17 Samsung Electronics Co., Ltd. Light emitting device package including a lead frame
US10892391B2 (en) 2017-04-26 2021-01-12 Samsung Electronics Co., Ltd. Light-emitting device package including a lead frame
US10971668B2 (en) 2017-04-26 2021-04-06 Samsung Electronics Co., Ltd. Light-emitting device package including a lead frame
US11677059B2 (en) 2017-04-26 2023-06-13 Samsung Electronics Co., Ltd. Light-emitting device package including a lead frame
CN114335284A (en) * 2021-12-30 2022-04-12 广东良友科技有限公司 Packaging structure and packaging method of edge-sealing coating LED bracket
CN114335284B (en) * 2021-12-30 2024-04-26 广东良友科技有限公司 Packaging structure and packaging method of edge-sealed coating LED bracket

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