• 1276¾ if.doc 九、發明說明： 【發明所屬之技術領域】 本發明是關於一種配設有發光二極體（LED)的發光 二極體裝置。 【先前技術】 作爲習知發光一極體裝置的一例，眾所周知爲面安裝 型發光二極體裝置（例如參照日本專利文獻1)，其於配設 有發光二極體晶片的容器内填充合成樹脂，使發光二極體 藝晶片封裝在容器内。而通過這種發光二極體裝置而發出白 色光的習知例，眾所周知是使藍色發光led晶片的藍色 光，與由此藍色發光激發黃色發光螢光體所獲得的黃色光 色，而輸出白色光。而且，眾所周知，在這種發光二極 體裝置中，爲了使發光二極體晶片所發出的光反射到基板 女裝面上，以提咼輸出光的光束，而在此基板安裝面上形 成反射率較高的白色樹脂，或鍍銀(Ag)、鍍鎳(Ni)等金屬 鑛層。（參照例如曰本專利文獻2 ) • 【專利文獻1日本專利特開2002 —43625號公報 【專利文獻2】日本專利特開2〇〇2_319711號公報 [發明所欲解决的問考] 一然而，習知技術中存在如下問題··如果爲了提高輸出 光的，束，使用反射率高於賴的鍍銀，則輸出光的光束 會提高，但是導致演色性以及相關色溫產生變化。 ，亦即，在習知技術中，如果使發光二極體晶片的藍色 發光（例如460 nm)等短波長範圍的反射率提高，則因藍 12762¾ 2pif.doc 色發光激發的钱體的發光強度增強，因此额 的強度比産生了變化。 皿 因此，並不能實現提高反射率以提高輸出光的光束與 演色性。 【發明内容】 本發明的目的在於提供一種發光二極 制演色性降低，並且使輸出光的光束提古 ^ ' p 發光=二極體裝置；徵在於具備: 光、/日*衣在基板上；螢光體層，其覆蓋發 先-極體“，亚且添加有f光體 層包2賴發光二極财置巾，其碰在於：上述反射 層具=== 於收納發光二極體晶:=爱先體層的光’並且形成 本發明提供一種於古-μ g 士 發光二極體晶片，其安=衣置’其雜在於具備： 光體層，其❹!來自^基板上，主要發出藍色光；螢 黃色系光，並射出由極體晶片的藍色光激發而發出 色光；反射層，苴I有‘監色先和黃色系光混色而成的白 ，、/、有以下特性··波長爲540 nm的反射 1276¾¾^ 率是波長爲640 nm的反射率的13倍〜2·5倍，且 540 nm的反射率爲、， 、马 ，料A⑽以上，亚且至少反射藍色光和普 色糸光。 少、 上述反射 在上述的發光二極體裝置中，其特徵在於 層通過鍍金而形成。 在上述的發光二極體裝置中，其特徵在於：上述 層的厚度爲0.2〜0.4 μιη。 在上述的發光二極體襞置中，其特徵在於：上述反射 層形成於上述基板上。 根據本發明，由於通過反射層使包含螢光體層中螢光 發光的長波長範圍内的光反射率，高於鎳(Ni)的光反射 率，因此可提高由該螢光體層向外部輸出的輸出光的光束。 而且，由於此光束提高的輸出光是使演色性提高的長波長 範圍内的光，因而可抑制演色性降低。 根據本發明，由於反射層包含金，故可防止或者降低 長期因反射層氧化或者硫化所造成的劣化。 • 根據本發明，來自螢光體的長波長範圍内的光，在基 板的反射面與具有投光開口的凹部内這兩處，分別由較高 反射層反射，故可使其反射光量增加。因此，僅由反射光 量的增加，即可提高由凹部開口向外部輸出的輸出光的光 束。 根據本發明，通過該反射層使例如在約7〇⑻K以下的 低相關色溫範圍内的發光效率（lm/W)比鎳（Ni)制反 射層等的發光效率要南’由此可抑制低相關色溫範圍内光 I2762^_〇c 2 =的下卩牛。換έ之，於低相關色溫範圍内，可一面抑制 ^輸出的下降’―面通過改變螢光體層的組 法 當改變相關色溫。 卜¥上述波長爲540 rnm與460 mm的光反射率 =^於1.3日守，由於反射層的光反射特性於短波長範圍内 、光反射率接近比金高的制反射特性，因而難以調整到 低^關色溫。而且，當反射率比超過2.5倍時，反射光中 春❸[色光相對减少，導致發光效率有降低的趨勢。因此， 僅可調整低相關色溫範圍，故相關色溫的可調整範圍變窄。 根據本發明，反射層通過鑛金而形成，因而可防止或 者降低長期因反射層的氧化或硫化所造成的劣化。 _本發明’通賴金㈣成的反射層厚度爲0.2〜 0.4 μιη，因此與該厚度範圍以外的情形相比，可起到反射 率較高的效果。 根據本發明，當在基板上安裝發光二極體晶片時，可 於此平板狀基板上形成反射層，故可易於高效且高精度地 φ 形成此反射層。 而且在基板上女褎發光二極體晶片後，以該基板爲 底面，可易於形成取光口（投光開口），使其直綫對向於此 ' 底面，故可提高取光口的光取出效率，其所取的光包含由 -該底面反射層反射的光。 為濃本發明之上述和其他目的、特徵和優點能更明顯 易懂’下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 1276237 · 19195pif.doc 【實施方式】 以下’依據附圖對本發明的實施例加以說明。另外， 多數張附圖中，對於同一或者相當部分，附上同一符號。 圖1是本發明第1實施例的IJED (發光二極體）照明 裝置1的平面圖，圖2是圖1的II一II綫剖面圖，圖3是 圖2的III部分放大圖。 如圖1、圖2所示，LED照明裝置1，是在基板2上 φ 以例如3行3列的矩陣狀配設有多數個發光二極體裝置 3、3、······，並連成爲一體。 基板2是由具有放熱性及剛性的鋁（Ai)或Ni、玻璃 %氧樹脂等平板所構成，並且是將多數個發光二極體裝置 3、3、......的各基板連成一體而成的一體基板，在此基板 2上透過電性絕緣層4而配設有導電層5。 如圖3所示，在導電層5上，以每個LED裝置3爲單 位’由Cu與Ni的合金或Au等形成陰極侧與陽極側的一 對電路圖案（布綫圖案）5a、5b，並且在這一對電路圖案 _ %之間’***樹脂荨電絕緣體5c，使這一對電路圖案 5a、5b彼此電性絕緣。 在這一對電路圖案5a、5b上，透過底部鍍Ni (鎳） 層6a而形成底部鍍金層7a，並且底部鍍见層以形成底 部鍍金層7a的基底層。這些底部鍍见層如與底部鍍金層 7a，對應於-對電路圖案5a、5b，分別通過陰極側與陽^ 側的電絕緣體5c而電性絕緣。此外，在此底部鑛金層7a 的陰極侧或陽極侧的任一方上面，以每個裝置3爲單 1276237 · I9192pif.doc 位，分別搭載藍色發光LED晶片8。各藍色發光LED晶 片8包含發出藍色光的例如氮化鎵（GaN)系半導體等。 各藍色發光LED晶片8通過接合綫9、9，將其陰極與陽 極的一對上電極’分別連接到電路圖案5a、5b上的鍛金層 上。 然後，在基板2上，以每個LED裝置3爲單位，形成 透鏡座11，此透鏡座11在各藍色發光LED晶片8周圍隔 • 開所需的間距而環繞，且分別以同心狀形成朝向基板2的 相反側（圖2、圖3中的上方）而逐漸擴展的圓錐台狀凹 部10,並且將這些透鏡座形成一體。透鏡座Η由例如pBT (聚對苯二曱酸丁二醇酯）或ΡΡΑ (聚鄰苯二曱醯胺)、 PC (聚碳酸脂）等合成樹脂所構成，各凹部1〇分別具有 向外部開口的投光開口 10a。 、-而各凹部10中，在其内部分別填充具有透光性的矽膠 或％氧樹脂等熱硬化性透明樹脂，作爲密封樹脂12，並在 鲁 此密封樹脂12中，注入添加有所需重量百分比的普色發光 鸯光體的樹脂，使之熱硬化，由此構成黃色發光榮光體 3 ’而此黃色發光螢光體接收來自藍色發光LED晶片8 的藍色光並發出黃色螢光。 另外，作爲黃色發光螢光體13，其包含可螢光發出黃 次系光的螢光體’此黃色系光包含波長爲 480 nm以上的 =光或綠色光。而且’如圖4所示，在凹部1G的側面， '王面形成上述鐘鎳層及鍍金層，作爲側面鍛Μ層沾及 貝1面錢金層7b ’也可再進-步，使這些側面鍍抓層讣與 10 1276¾^ 侧面鍍金層7b，分別與底部錄抓 連成一體。 圖5表示是對底面、侧面鍍金層 些鍍金層7a、7b後單是先前的鍍鎳層 射率的反射特性。• 12763⁄4 if.doc IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode device equipped with a light-emitting diode (LED). [Prior Art] As an example of a conventional light-emitting diode device, a surface-mounted light-emitting diode device (see, for example, Japanese Patent Laid-Open Publication No. Hei. The LED photo chip is packaged in a container. A conventional example in which white light is emitted by such a light-emitting diode device is known as a blue light color obtained by causing a blue light-emitting LED wafer and a yellow light color obtained by exciting a yellow light-emitting phosphor with blue light. Output white light. Moreover, it is known that in such a light-emitting diode device, in order to reflect the light emitted from the light-emitting diode wafer to the surface of the substrate, to extract the light beam of the output light, a reflection is formed on the substrate mounting surface. A white resin with a high rate or a metal ore layer such as silver (Ag) or nickel (Ni). (Patent Document 1) Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. 2-319711. The conventional technique has the following problems: If a silver having a reflectance higher than that of the beam is used to increase the output light, the beam of the output light is increased, but the color rendering property and the correlated color temperature are changed. That is, in the prior art, if the reflectance of the short-wavelength range such as blue light emission (for example, 460 nm) of the light-emitting diode wafer is increased, the light of the body excited by the blue 127623⁄4 2pif.doc color light is emitted. The strength is increased, so the intensity ratio of the amount changes. Therefore, it is not possible to increase the reflectance to increase the beam and color rendering of the output light. SUMMARY OF THE INVENTION An object of the present invention is to provide a light-emitting two-pole color rendering performance reduction, and to make the light beam of the output light to be a 'p luminescence=diode device; the eigen is provided with: light, / day * clothing on the substrate a phosphor layer, which covers the first-polar body, and has a f-light layer package and a light-emitting diode package, the collision is: the reflection layer has a === for accommodating the light-emitting diode crystal: = The light of the precursor layer is formed and formed by the present invention. The invention provides an ancient-μg light-emitting diode wafer, which is provided with a light-emitting layer, which is provided on the substrate, and mainly emits blue. Color light; fluorescent yellow light, and emitted by the blue light of the polar body wafer to emit color light; reflective layer, 苴I has a white color mixed with the yellow color, /, has the following characteristics · · wavelength The reflection at 540 nm is 12763⁄43⁄4^, which is 13 times to 2.5 times the reflectance at 640 nm, and the reflectivity at 540 nm, , horse, material A (10) or more, and at least reflects blue light and plain color.糸光. The above reflection is in the above-mentioned light-emitting diode device, and its characteristics The layer is formed by gold plating. In the above-described light emitting diode device, the thickness of the layer is 0.2 to 0.4 μm. In the above-described light emitting diode device, the reflective layer is formed. According to the present invention, since the light reflectance in the long wavelength range including the fluorescent light in the phosphor layer is higher than the light reflectance of nickel (Ni) by the reflective layer, the fluorescent light can be improved. The light beam of the output light that is output to the outside of the bulk layer. Further, since the output light that is increased by the light beam is light in a long wavelength range in which the color rendering property is improved, the color rendering property can be suppressed from being lowered. According to the present invention, since the reflective layer contains gold, It is possible to prevent or reduce long-term deterioration due to oxidation or vulcanization of the reflective layer. According to the present invention, light in a long wavelength range from the phosphor is in the reflective surface of the substrate and the recess having the light-emitting opening, Reflected by the higher reflective layer, the amount of reflected light can be increased. Therefore, the output from the opening of the recess can be increased only by the increase of the amount of reflected light. According to the present invention, the light-emitting efficiency (lm/W) in a low correlation color temperature range of, for example, about 7 〇 (8) K or less is made to be higher than that of a nickel (Ni) reflective layer or the like by the reflective layer. This can suppress the lower yak of light I2762^_〇c 2 = in the low correlation color temperature range. In the low correlation color temperature range, the decrease of the output can be suppressed while the surface layer of the phosphor layer is changed. When the relative color temperature is changed, the light reflectance of the above wavelengths of 540 rnm and 460 mm = ^ at 1.3 shou, due to the light reflection characteristics of the reflective layer in the short wavelength range, and the light reflectance is close to that of gold. Therefore, it is difficult to adjust to a low color temperature. Moreover, when the reflectance ratio exceeds 2.5 times, the reflected light in the spring ❸ [the color light is relatively reduced, resulting in a decrease in luminous efficiency. Therefore, only the low correlated color temperature range can be adjusted, so the adjustable range of the correlated color temperature is narrowed. According to the present invention, the reflective layer is formed by mineral gold, and thus deterioration due to oxidation or vulcanization of the reflective layer for a long period of time can be prevented or reduced. The thickness of the reflective layer formed by the present invention is 0.2 to 0.4 μm, so that the effect of higher reflectance can be obtained as compared with the case outside the thickness range. According to the invention, when the light-emitting diode wafer is mounted on the substrate, the reflective layer can be formed on the flat substrate, so that the reflective layer can be easily and efficiently formed with high precision. Moreover, after the daughter-in-law LED substrate on the substrate, the substrate is used as the bottom surface, and the light-receiving opening (light-emitting opening) can be easily formed so that the line faces the bottom surface, so that the light extraction of the light-receiving port can be improved. Efficiency, the light it takes contains light reflected by the bottom reflective layer. The above and other objects, features, and advantages of the present invention will become more apparent <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; 1276237 - 19195pif.doc [Embodiment] Hereinafter, embodiments of the invention will be described with reference to the drawings. In addition, in the drawings, the same reference numerals are attached to the same or equivalent parts. Fig. 1 is a plan view showing an IJED (Light Emitting Diode) illumination device 1 according to a first embodiment of the present invention, Fig. 2 is a cross-sectional view taken along line II-II of Fig. 1, and Fig. 3 is an enlarged view of a portion III of Fig. 2. As shown in FIG. 1 and FIG. 2, in the LED illumination device 1, a plurality of light-emitting diode devices 3, 3, ..., ..., are arranged in a matrix of, for example, three rows and three columns on the substrate 2. And become one. The substrate 2 is made of a flat plate of aluminum (Ai) or Ni, glass % oxygen resin having heat dissipation and rigidity, and is connected to each substrate of a plurality of light-emitting diode devices 3, 3, ... The integrated substrate is integrally formed, and the conductive layer 5 is disposed on the substrate 2 through the electrically insulating layer 4. As shown in FIG. 3, a pair of circuit patterns (wiring patterns) 5a, 5b on the cathode side and the anode side are formed on the conductive layer 5 by an alloy of Cu and Ni or Au or the like in units of each LED device 3. And the resin 荨 electrical insulator 5c is inserted between the pair of circuit patterns _% to electrically insulate the pair of circuit patterns 5a, 5b from each other. On the pair of circuit patterns 5a, 5b, a bottom gold plating layer 7a is formed by plating a Ni (nickel) layer 6a at the bottom, and a bottom layer is plated to form a base layer of the bottom gold plating layer 7a. These bottom plating layers, such as the bottom gold plating layer 7a, corresponding to the - pair circuit patterns 5a, 5b, are electrically insulated by the cathode side and the male side electrical insulator 5c, respectively. Further, on either the cathode side or the anode side of the bottom gold layer 7a, the blue light-emitting LED chip 8 is mounted on each of the devices 3 as the single 1276237 · I9192 pif. doc. Each of the blue light-emitting LED wafers 8 includes, for example, a gallium nitride (GaN)-based semiconductor that emits blue light. Each of the blue light-emitting LED chips 8 is connected to the forged gold layer on the circuit patterns 5a, 5b via bonding wires 9, 9 and a pair of upper electrodes ' of the cathode and the anode, respectively. Then, on the substrate 2, a lens holder 11 is formed in units of each of the LED devices 3, and the lens holder 11 is surrounded by a required interval around each of the blue light-emitting LED chips 8, and is formed in a concentric shape. The truncated cone-shaped recesses 10 are gradually expanded toward the opposite side of the substrate 2 (upper in FIGS. 2 and 3), and these lens holders are integrally formed. The lens holder is made of, for example, synthetic resin such as pBT (polybutylene terephthalate) or ruthenium (polyphthalamide) or PC (polycarbonate), and each concave portion has an outer portion The light projecting opening 10a of the opening. In each of the recesses 10, a thermosetting transparent resin such as a translucent silicone resin or a % oxygen resin is filled in the interior of the recessed portion 10 as a sealing resin 12, and the sealing resin 12 is injected into the sealing resin 12 to add the required weight. The percentage of the color-emitting phosphor of the phosphor is thermally hardened, thereby constituting a yellow-emitting luminescent body 3' which receives blue light from the blue-emitting LED chip 8 and emits yellow fluorescence. Further, the yellow luminescent phosphor 13 includes a phosphor that emits yellow light in a fluorescent light. The yellow light includes = light or green light having a wavelength of 480 nm or more. Further, as shown in Fig. 4, on the side surface of the concave portion 1G, the 'King surface is formed with the above-mentioned nickel-plated layer and the gold-plated layer, and the side forging layer is adhered to the shell 1 gold layer 7b'. The side plating layer 讣 and the 10 12763⁄4^ side gold plating layer 7b are respectively integrated with the bottom recording. Fig. 5 shows the reflection characteristics of the previous nickel plating luminosity after the gold plating layers 7a and 7b of the bottom and side gold plating layers.
圖5中’如A曲綫所不，㈣i層的可視光反射 在包含藍色發光L咖的藍色缝長（例如46Qnm)的働 誰〜480 nm短波長範圍内，反射率約5〇%左右而相對較 间，在55〇 nm以上的長波長範圍内，反射率約娜〜％ %左右’則不一定會比較高。 與此相對’如B曲綫所示，底部、侧面鍍金層％、7b 的可視光反射率中，在上述短波長範圍内，反射率例如約 4〇%左右，低於鍍见層50%左右的反射率，而在550 nm 以上長波長範圍内，反射率約8G%〜H)()%，相比鍍Ni層 的、、、勺65^〜70%左右的反射率，高出約〜左右。 接著，說明該LED照明裝置工的作用。In Fig. 5, 'as shown by the A curve, (iv) the visible light reflection of the i layer is in the blue slit length (for example, 46Qnm) containing the blue light emitting L coffee, and the reflectance is about 5〇% in the short wavelength range of ~480 nm. In the relatively long wavelength range of 55 〇 nm or more, the reflectance is about ~%% or so' is not necessarily high. On the other hand, as shown by the B curve, in the visible light reflectance of the bottom, side gold plating layers %, and 7b, the reflectance is, for example, about 4% in the short wavelength range, and is less than about 50% of the plating layer. Reflectance, and in the long wavelength range above 550 nm, the reflectance is about 8G%~H)()%, which is about ~50% higher than that of the Ni-plated layer. . Next, the role of the LED lighting device will be described.
層6a和底部鍍金層7a 7a、7b，以及去除這 ，比較二者可視光反 首先田在各陰極侧與陽極侧的電路圖案5a、5b之 間^仉^卜部施加特定的直流電壓時，各藍色發光led晶片 廿舍t^二色光此監色發光在黃色發光螢光體層Η内激發 貫色發光體’使其發出黃色光，並且與此黃色混色而成爲 白色光。XI些藍色發光或黃色光、自色光，由對向於投光 開口 1〇a的底部鍍金層7a反射，或者也可分別由朝向投光 開口 1〇a而逐漸開口的侧面鍍金層7b反射，再分別從投光 開口 10a向外部投射。 !276^7 pif.doc 約先右開口池向外部投射的光束可提高例如 長波:因爲此光束提高的光，主要是使演色性提高的 ΐΐ Γ圍(例如550 nm以上)内的光，故也可=寅 與口具備夕li當具備底部、側面錄金層7a、7b的兩者 ^提ς，二方的情形相比’由於螢光體層13内的光反射 羊“，由此可提高輸出光的光束及演色性。九反町 外沾ί外，反射面的底部、側面鍍金層7a、7b包含雜以致 、=’故可防止或者降低長期因氧化造成的劣化、。 者’底部、侧面鍍金層7a、7b分别读讲I产 側面㈣層 二5上美=可防止底部、侧面鑛金層 可用使上汁1C帝ja c 卜上处笔、、、巴緣體5c也 裝置:^1^=發光二極體照明 發光二極體裝置22，且有h 2的主要枝縱剖面圖。此 的主要_ 案5上形财反射層23 相/4 ί 述圖卜圖4所示的發光二極體裝置3 部分’圖6中附上同樣㈣ ’革ra疋波長爲460 nm的反射率 12 1276¾ rb的L3〜2.5倍。 如圖5所示鍍金B，波長爲460 nm的反射率ra例如 約40%，而波長爲540 nm的反射率rb約80%，後者的反 射率rb約是丽者反射率ra的2倍，因此其具有作爲反射 層23的反射材料所需條件。 圖8是此鍍金層的厚度與所需波長（例如45〇、55〇、 660 nm)的全反射率的相關關係一覽表，圖9是其圖表。 如圖8、圖9所示，鍍金層的全反射率，在鍍層厚度約爲 0·1 μιη、0·3 μηι、〇·5 μηι的三者中，當爲〇·3陣時最大。 因此，作爲反射層23，〇·3 μιη厚度的鍍金層最佳。 士圖7是分別使用鍍金An以及鍍鎳Ni作爲此反射層23 時，相關色溫（K)與發光效率的相關關係圖表，此圖表 ，據新的見解。相關色溫的調整，可通過例如調節密封樹 月曰12内所混合的黃色發光或紅色發光等黃色光系列的螢 光體混合量而進行。 如圖7所示，使用鍍金層作爲反射層23時，例如在約 7000K以下的低相關色溫範圍内的發光效率高於鍍鎳層怊 的發光效率。 因此，使用鎳作爲反射層23時，使混合於密封樹脂 ^内的紅色螢光體的混合量增加，由此可在低溫範圍内調 即相關色溫’但從紅色螢紐自身的藍色光向紅色光的轉 換效率較低，而且由於吸收來自發光二極體晶片8的藍色 光人來自S色佘光體的黃色光，因而白色輸出光减弱。 /、此相對使用鍛金作爲反射層23時’相比錄的情 13 1276¾¾ pif.doc 形’並未使混合在讼封樹脂12内的紅色螢光體的混合量增 加，因而可在例如約7000K以下的低相關色溫範圍内調節。 由此’在低相關色溫範圍内’可不减弱輸出光而適當調節 相關色溫。亦即，欲取出的輸出光的相關色溫相同時，與 鍍鎳相比，鍍金可使輸出光增強。 而且，在基板2上安裝發光二極體晶片8時，由於可 在此平板狀基板2上形成反射層23，因此可易於高效且高 精度地形成此反射層23。 再者，在基板2上安裝了發光二極體晶片8後，以此 基板2爲底面，可易於形成光取出口（投光開口），使其直 綫對向於該底面，因而可提高來自光取出口的輪出光的輸 出，該輸出光包含由該底面反射層23所反射的反射光。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限^本發明，任何熟，此技藝者，林本翻 :口乾圍内’當可作些許之更動與潤飾，： 乾圍當視_之申請專利範圍所界定者 之保護 【圖式簡單說明】 面圖 圖1是本發明第1實施例的發光二極體照明裝置的平 2是 圖3是圖2的in部分放大圖。 比 】其f實施例的主要部分放大縱剖面圖 較二者可視光反射率的反射特續鎳層’ 14 1276¾¾^ 圖6是本發明第2實施例的發光二極體照明裝置中， 發光二極體裝置的主要部分縱剖面圖。 圖7是在使用鍍金、鍍銀以及鍍鎳作爲圖6所示發光 二極體裝置的反射層時，白色光的相關色溫與發光效率的 相關關係圖。 ） 圖8是圖6所示鍍金層的厚度以及白色光在所需波長 的全反射率的相關關係一覽表。 圖9是圖8所示鑛金層的厚度以及白色光在所需波長 的全反射率的相關關係圖。 【主要元件符號說明】 1、 21 :發光二極體照明裝置 2、 22 :基板 3:發光二極體裝置 4 :絕緣層 5 :導電層 5a、5b電路圖案，· 5c :電絕緣體間隙 6a :底部鍍Ni層 6b :側面鍛金層 7a :底部鍍金層 7b :侧面鍛金層 8 : LED晶片 9 :接合綫 10 :凹部 15 I2763397p,d〇c 1 Oa :投光開口 I Ob :凹部側面 II :透鏡座 12 :密封樹脂 13 :黃色螢光體層 23 :反射層The layer 6a and the bottom gold plating layers 7a 7a, 7b are removed, and when the visible light is reversed, the specific DC voltage is applied between the circuit patterns 5a and 5b on the cathode side and the anode side. The blue-emitting LED chip is used to illuminate the color illuminator in the yellow luminescent phosphor layer to emit yellow light, and to mix with the yellow color to become white light. XI some blue light or yellow light, self-color light, reflected by the bottom gold plating layer 7a opposite to the light projecting opening 1A, or may also be reflected by the side gold plating layer 7b which is gradually opened toward the light projecting opening 1A, respectively. And projecting from the light projecting opening 10a to the outside. !276^7 pif.doc A beam that is projected to the outside by the right open cell can increase, for example, a long wave: because the light that is raised by the beam is mainly light that increases the color rendering (for example, above 550 nm), It is also possible to have both the bottom and the side gold layer 7a, 7b, and the two sides can be improved by the fact that the light is reflected by the light in the phosphor layer 13 The beam and color rendering of the output light. The bottom of the reflective surface and the gold-plated layers 7a and 7b on the side of the reflective surface contain impurities, which can prevent or reduce long-term deterioration due to oxidation. The gold-plated layers 7a and 7b respectively read the side of the production I (four) layer two 5 on the US = can prevent the bottom, the side of the gold layer can be used to make the juice 1C Emperor ja c Bu on the pen,, and the edge of the body 5c also: ^1 ^=Light-emitting diode illuminating light-emitting diode device 22, and having a main branch longitudinal cross-sectional view of h 2 . This main _ case 5 upper-shaped financial reflection layer 23 phase / 4 ί 图 图 Figure 4 Diode device 3 part 'Figure 6 attached the same (four) 'gra ra wavelength 460 nm reflectivity 12 12763⁄4 rb L3 ~ 2.5 times As shown in Fig. 5, gold plating B has a reflectance ra of about 460 nm, for example, about 40%, and a reflectance rb of about 80% at a wavelength of 540 nm, and the reflectance rb of the latter is about twice that of the reflective reflectance ra. Therefore, it has the conditions required for the reflective material as the reflective layer 23. Fig. 8 is a list of the correlation between the thickness of the gold plating layer and the total reflectance of the desired wavelength (e.g., 45 〇, 55 〇, 660 nm), and Fig. 9 is The graph shows the total reflectance of the gold-plated layer, as shown in Fig. 8 and Fig. 9, in the case where the thickness of the plating layer is about 0·1 μηη, 0·3 μηι, and 〇·5 μηι, when it is 〇·3 array Therefore, as the reflective layer 23, the gold plating layer having a thickness of 〇·3 μm is optimal. Figure 7 shows the correlation between the correlated color temperature (K) and the luminous efficiency when gold plating An and nickel plating Ni are used as the reflecting layer 23, respectively. The chart, this chart, according to new insights, can be adjusted by adjusting the amount of phosphor in the yellow light series such as yellow or red light mixed in the sealed tree moon 12, as shown in Fig. 7. It is shown that when a gold plating layer is used as the reflective layer 23, for example, a low phase of about 7000 K or less The luminous efficiency in the color temperature range is higher than that in the nickel plating layer. Therefore, when nickel is used as the reflective layer 23, the mixing amount of the red phosphor mixed in the sealing resin is increased, thereby being able to be in the low temperature range. The color temperature is adjusted, but the conversion efficiency from the blue light of the red fluorescent to the red light is low, and since the blue light from the light-emitting diode chip 8 absorbs the yellow light from the S-color phosphor, the white output light is weakened. When the wrought gold is used as the reflective layer 23, the 'compared with the 13 13763⁄43⁄4 pif.doc shape' does not increase the mixing amount of the red phosphor mixed in the sealing resin 12, and thus can be, for example, about Adjustable within a low correlated color temperature range below 7000K. Thus, the correlation color temperature can be appropriately adjusted without weakening the output light in the range of low correlated color temperature. That is, when the correlated color temperature of the output light to be taken out is the same, gold plating can enhance the output light as compared with nickel plating. Further, when the light-emitting diode wafer 8 is mounted on the substrate 2, since the reflective layer 23 can be formed on the flat substrate 2, the reflective layer 23 can be easily formed with high efficiency and high precision. Further, after the light-emitting diode chip 8 is mounted on the substrate 2, the substrate 2 is used as a bottom surface, and the light extraction opening (light-emitting opening) can be easily formed so as to be linearly opposed to the bottom surface, thereby improving light from the light. An output of the exiting light of the exit is taken, the output light comprising reflected light reflected by the bottom reflective layer 23. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and any skilled person skilled in the art, Lin Ben turned: inside the mouth and dry mouth, when it is possible to make some changes and retouching,: dry circumference FIG. 1 is a plan view of a light-emitting diode illuminating device according to a first embodiment of the present invention. FIG. 3 is an enlarged view of a portion of FIG. . In the light-emitting diode illuminating device of the second embodiment of the present invention, the light-emitting diode is the same as that of the light-emitting diode of the second embodiment of the present invention. A longitudinal section of the main part of the polar body device. Fig. 7 is a graph showing the correlation between the correlated color temperature of white light and the luminous efficiency when gold plating, silver plating, and nickel plating are used as the reflective layer of the light-emitting diode device shown in Fig. 6. Fig. 8 is a table showing the relationship between the thickness of the gold plating layer shown in Fig. 6 and the total reflectance of white light at a desired wavelength. Figure 9 is a graph showing the relationship between the thickness of the gold layer shown in Figure 8 and the total reflectance of white light at a desired wavelength. [Description of main component symbols] 1, 21: LED lighting device 2, 22: Substrate 3: LED device 4: Insulation layer 5: Conductive layer 5a, 5b circuit pattern, · 5c: Electrical insulator gap 6a: Bottom Ni plating layer 6b: Side wrought gold layer 7a: Bottom gold plating layer 7b: Side wrought gold layer 8: LED wafer 9: Bonding wire 10: Concave portion 15 I2763397p, d〇c 1 Oa: Projection opening I Ob : Concave side II: Lens Seat 12: sealing resin 13: yellow phosphor layer 23: reflective layer