201021928 六、發明說明： 【發明所屬之技術領域】 本發明係關於：藉由雷射之照射來進行有機EL用遮 罩的潔淨之有機EL用遮罩潔淨裝置、有機el (Electro Luminescence :電激發光）顯示器之製造裝置、有機el 顯示器及有機EL用遮罩潔淨方法。 φ 【先前技術】 有機EL ( Electro Luminescence :電激發光）顯示器 ，係屬不需要背光之低耗電、輕薄型的畫像顯示裝置，被 廣泛地使用。其構造上’係於透明性的玻璃基板上層積有 機EL·薄膜層’有機EL薄膜層則採用藉由陽極層與陰極 層來夾住發光層之構造。發光層則以在玻璃基板上蒸鍍有 機材料形成爲薄膜者被廣爲使用，且將構成顯示器之各畫 素區域予以分割爲3來蒸鍍RGB (紅色、綠色、藍色） 〇 之3色的有機材料。因此，爲了於各畫素之3個區域蒸鍍 . 不同顏色的有機材料（有機色素材料），使用形成有多數 的開口部之有機EL用遮罩（shadow mask ··影像遮罩）來 進行蒸鍍。一面將此有機EL用遮罩各畫素份地予以錯開 ，一面藉由蒸鍍各色之蒸鍍物質，來完成發光層之蒸鎪製 程。 於進行蒸鍍製程時，有機材料不單附著於玻璃基板’ 也附著於有機EL用遮罩。有機EL用遮罩並非只被使用 於1個蒸鍍製程，而係被重複使用，於進行下一蒸鍍製程 201021928 時，如有機el用遮罩附著有蒸錢物質’會有蒸鍍物質附 著於新的玻璃基板之虞。另外，有機材料也蒸鍍於多數形 成於有機EL用遮罩的開口部之邊緣部分’使得開口部的 面積部分地或全面地被堵塞。不用說是開口部的全部被堵 塞的情形，單單即使是部分地被堵塞時，開口面積產生_ 化，使用該有機EL用遮罩之情形的蒸鍍精度會顯著地降 低，而且變成無法使用。因此，定期地（以完成1個之蒸 鏟製程後）潔淨有機EL用遮罩來進行蒸鍍物質的去除。 作爲有機EL用遮罩的潔淨，主要進行使用界面活性 劑等之濕式潔淨。濕式潔淨係對於有機EL用遮罩供給液 體來進行之潔淨。但是，所被潔淨的有機EL用遮罩，係 屬微米級（數十微米程度）的極薄金屬板，於濕式潔淨時 ，基於液體壓力作用，對有機EL用遮罩產生扭曲或變形 等之大的損傷。另外，使用界面活性劑等之藥液來進行濕 式潔淨時，需要藥液供給機構以及處理使用完畢的藥液（ 排液）之排液處理機構，使得機構複雜化，而且也有排液 @ 所產生的環境污染問題。 另一方面，作爲不使用濕式潔淨之藥液的潔淨，於專 利文獻1揭露有對有機EL用遮罩照射雷射來進行潔淨（ 雷射潔淨）之技術。藉由將雷射照射於金屬素材的有機 EL用遮罩’使有機El用遮罩與有機材料之間產生剝離力 。專利文獻1之技術，係藉由此剝離力從有機EL用遮罩 去除有機材料來進行潔淨者。 201021928 [先前技術文獻] [專利文獻1]日本專利特開2006-169573號公報 【發明內容】 [發明所欲解決之課題] '於專利文獻1之技術中，雖然對有機EL用遮罩照射 ―雷射，將附著的有機材料予以剝離，但爲了防止進行潔淨 φ 之槽內或大氣的污染，使剝離後的有機材料不要從有機 . EL用遮罩分開。因此，爲了去除剝離後之有機材料，使 用黏著性的薄膜。此薄膜，爲了轉印已剝離之有機材料， 使其具有黏著力，於將薄膜黏貼於有機EL用遮罩的狀態 下，照射雷射，使已剝離的蒸鍍物質轉印於薄膜。然後， 藉由使轉印有有機材料的薄膜從有機EL用遮罩剝離，完 成潔淨製程。[Technical Field] The present invention relates to a clean organic EL mask cleaning device, organic EL (Electro Luminescence) for performing organic EL mask by laser irradiation. Light) display manufacturing device, organic EL display, and mask cleaning method for organic EL. φ [Prior Art] An organic EL (Electro Luminescence) display is a low-power, thin and light image display device that does not require a backlight, and is widely used. In the structure, the organic EL film layer is laminated on the transparent glass substrate. The organic EL film layer has a structure in which the light-emitting layer is sandwiched by the anode layer and the cathode layer. The light-emitting layer is widely used by depositing an organic material on a glass substrate to form a thin film, and the respective pixel regions constituting the display are divided into three to vaporize three colors of RGB (red, green, blue). Organic materials. Therefore, in order to evaporate the three regions of the respective pixels, the organic material (organic pigment material) of a different color is vaporized by using an organic EL mask (shadow mask) that forms a plurality of openings. plating. This organic EL is staggered by masking each of the masks, and the vapor deposition process of the light-emitting layer is completed by vapor-depositing the vapor-deposited materials of the respective colors. When the vapor deposition process is performed, the organic material adheres not only to the glass substrate but also to the organic EL mask. The organic EL mask is not only used in one vapor deposition process, but is reused. When the next vapor deposition process 201021928 is performed, if the organic EL mask is attached with a vapor-deposited substance, there is a deposition of vapor deposition material. After the new glass substrate. Further, the organic material is also vapor-deposited on the edge portion of the opening portion formed in the organic EL mask so that the area of the opening portion is partially or completely blocked. It is needless to say that the entire opening portion is blocked, and even if it is partially blocked, the opening area is changed, and the vapor deposition accuracy in the case of using the organic EL mask is remarkably lowered, and it becomes unusable. Therefore, the vapor deposition material is removed by periodically cleaning the organic EL mask after completing one steam shovel process. As the cleaning of the organic EL mask, wet cleaning using an interface agent or the like is mainly performed. The wet cleaning system cleans the liquid supplied to the organic EL mask. However, the mask for the organic EL to be cleaned is an ultra-thin metal plate of a micron order (several tens of micrometers), and when wet and clean, the organic EL mask is distorted or deformed based on the liquid pressure. The big damage. In addition, when wet cleaning is performed using a chemical solution such as a surfactant, a chemical supply mechanism and a liquid discharge processing mechanism for processing the used chemical liquid (discharge) are required, and the mechanism is complicated, and there is also a liquid discharge. Environmental pollution problems. On the other hand, as a cleansing of a chemical solution which does not use wet cleaning, Patent Document 1 discloses a technique of irradiating a laser for a mask for organic EL to perform cleaning (laser cleaning). A peeling force is generated between the organic EL mask and the organic material by masking the organic EL with a laser irradiated to the metal material. According to the technique of Patent Document 1, the organic material is removed from the organic EL mask by the peeling force to perform cleaning. [Problems to be Solved by the Invention] In the technique of Patent Document 1, the mask for organic EL is irradiated - The laser removes the adhered organic material, but in order to prevent contamination in the tank or the atmosphere where the cleaning is performed, the organic material after peeling is not separated from the organic EL. Therefore, in order to remove the organic material after peeling, an adhesive film is used. In order to transfer the peeled organic material, the film has an adhesive force, and the film is irradiated with a laser while the film is adhered to the organic EL mask, and the peeled vapor deposition material is transferred to the film. Then, the film transferred with the organic material is peeled off from the mask for the organic EL to complete the cleaning process.
如前述般，有機EL用遮罩是極薄的金屬板，即使是 φ 極微微小的力量作用，也會產生扭曲或變形等而造成損傷 、 。並且伴隨近年來的有機EL顯示器的大畫面化，有機EL 用遮罩的尺寸也變得大型，大型且極薄的有機EL用遮罩 的處理上，需要極微細緻。於專利文獻1之技術中V由有 機EL用遮罩之薄膜的剝離，係以抵抗黏著力而予以剝開 之方式進行，過多的力量作用於有機EL用遮罩。其結果 爲，對有機EL用遮罩給予了甚大的損傷。 即在專利文獻1中，雖是藉由雷射，從有機EL用遮 罩來將有機材料剝離，但爲了去除已剝離的有機材料’使 -7- 201021928 薄膜接觸有機EL用遮罩，結果成爲並非以非接觸方式來 完成潔淨。另外，作爲薄膜，雖然使用雷射可以透過的素 材（聚乙烯對苯二甲酯），但即使是使用透過性之薄膜， 還是會使雷射產生衰減。因此，無法對於有機EL用遮罩 給予充分的能量，有無法發揮高潔淨效果之虞。而且，需 要進行薄膜之黏貼及剝離用的專用之機構，存在機構複雜 化，且裝置大型化的問題。特別是，如有機EL用遮罩變 得大尺寸，薄膜的尺寸也變大，機構的複雜化、裝置的大 @ 型化之問題變得更爲顯著。 因此，本發明之目的在於：於進行將附著於有機EL 用遮罩的蒸鍍物予以去除之潔淨時，對於基板以完全非接 觸狀態之方式來去除蒸鏟物。 [解決課題之手段] 爲了解決以上的課題，本發明之申請專利範圍第1項 之有機EL用遮罩潔淨裝置，爲用以去除附著於有機EL _ 用遮罩的蒸鍍物質之有機EL用遮罩潔淨裝置，其特徵爲 具備有：使對前述有機EL用遮罩的表面照射雷射光，將 前述蒸鍍物質予以粉碎所產生的游離產生物朝上方飛散之 雷射手段；及形成於由前述有機EL用遮罩的表面分開的 位置之去除前述游離產生物的去除手段。 如依據此有機EL用遮罩潔淨裝置，係將附著於有機 EL用遮罩之蒸鍍物質予以粉碎成爲游離產生物，使其朝 上方飛散，且藉由設置於由有機EL用遮罩的表面分開之 -8- 201021928 位置的去除手段來去除游離產生物，對於有機EL用遮罩 ，可以不使接觸固體或液體等來進行潔淨。 • 本發明之申請專利範圍第2項之有機EL用遮罩潔淨 裝置，係於申請專利範圍第1項所記載之有機EL用遮罩 潔淨裝置中，其中前述去除手段，係形成搬運已飛散的前 ' 述游離產生物而予以去除的氣流之氣流形成手段。 - 如依據此有機EL用遮罩潔淨裝置，可以藉由形成於 φ 由有機EL用遮罩表面分開之位置的氣流來去除已飛散之 游離產生物。 本發明之申請專利範圍第3項之有機EL用遮罩潔淨 裝置，係於申請專利範圍第2項所記載之有機EL用遮罩 潔淨裝置，其中前述氣流，係形成於從前述有機EL用遮 罩的表面分開的位置之層流狀態的氣流，且具有沿著前述 EL用遮罩的表面之流動。 如依據此有機EL用遮罩潔淨裝置，氣流成爲從有機 φ EL用遮罩的表面分開之層流狀態的氣流，且成爲沿著有 . 機EL用遮罩的表面之流動。藉由於有機EL用遮罩的上 方形成層流狀態的氣流，已飛散之游離產生物藉由氣流被 搬運，且於從有機EL用遮罩的表面分開之位置形成氣流 ，在有機EL用遮罩的正上方之區域不會產生亂流。藉此 ，不會再度回到有機EL用遮罩，游離產生物不會再度附 著於有機EL用遮罩，可以獲得極高的洗淨效果。 本發明之申請專利範圍第4項之有機EL用遮罩潔淨 裝置，係於申請專利範圍第2或3項所記載之有機EL用 -9- 201021928 遮罩潔淨裝置中，其中具備有：使前述雷射掃瞄前述有機 EL用遮罩的表面之雷射掃瞄手段。 如依據此有機EL用遮罩潔淨裝置，藉由使雷射掃瞄 ，可以潔淨有機EL用遮罩的特定區域。雷射的掃瞄範圍 ，可以是有機EL用遮罩的全面，也可以是限定於一部份 區域。 本發明之申請專利範圍第5項之有機EL用遮罩潔淨 裝置，係如申請專利範圍第2或3項所記載之有機EL用 _ 遮罩潔淨裝置，其中具備有：使前述有機EL用遮罩與前 述雷射手段相對地移動用之相對移動手段。 如依據此有機EL用遮罩潔淨裝置，藉由使有機EL 用遮罩與雷射手段相對地移動，可以潔淨有機EL用遮罩 的特定區域。相對移動手段，如可以使有機EL用遮罩與 雷射手段相對地移動即可，也可以使有機EL用遮罩與雷 射手段的其中一方或兩方移動。 本發明之申請專利範圍第6項之有機EL用遮罩潔淨 @ 裝置，係如申請專利範圍第4項或5項所記載之有機E L 用遮罩潔淨裝置，其中，爲了對前述有機EL用遮罩的不 同區域分別照射雷射，具備有複數個前述雷射手段。 如依據此有機EL用遮罩潔淨裝置，可以藉由複數個 雷射手段來分割區域以進行有機EL用遮罩的洗淨，能夠 高速地進行潔淨。 本發明之申請專利範圍第7項之有機EL用遮罩潔淨 裝置’係如申請專利範圍第3項所記載之有機EL用遮罩 -10- 201021928 潔淨裝置，其中前述氣流形成手段，係具備：於從前述有 '機EL用遮罩只分開爲了形成層流狀態的前述氣流所必要 ‘ 的間隔之位置所設置的吸引手段。 如依據此有機EL用遮罩潔淨裝置，吸引手段係於從 有機EL用遮罩分開之位置，且沿著有機EL用遮罩的表 '面來進行吸引，成爲可以在從有機EL用遮罩的表面分開 & 之位置形成層流狀態的氣流。 φ 本發明之申請專利範圍第8項之有機EL用遮罩潔淨 裝置，係如申請專利範圍第7項所記載之有機EL用遮罩 潔淨裝置，其中前述氣流形成手段，係具備：朝向前述吸 引手段送風之送風手段。 如依據此有機EL用遮罩潔淨裝置，藉由將吸引手段 與送風手段予以組合，可以行程穩定的層流狀態之氣流。 本發明之申請專利範圍第9項之有機EL用遮罩潔淨 裝置，係如申請專利範圍第1項所記載之有機EL用遮罩 φ 潔淨裝置’其中具備有：對於多數形成於前述有機EL用 _ 遮罩的開口部，從背面朝向表面形成上升氣流的上升氣流 形成手段。 如依據此有機EL用遮罩潔淨裝置，從有機EL用遮 罩的開口部之背面朝向表面形成上升氣流，即使是游離產 生物朝向開口部落下，也藉由上升氣流被推回，不會捲入 背面而附著。另外，不單是雷射的能量，藉由上升氣流， 游離產生物也會朝上升，可以確實地引導游離產生物至去 除手段，能夠進行極高洗淨度的潔淨。 -11 - 201021928 本發明之申請專利範圍第10項之有機el用遮罩潔 淨裝置，係如申請專利範圍第1項所記載之有機EL用遮 罩潔淨裝置，其中具備有：設置於前述雷射手段的後段側 ，將附著於前述有機EL用遮罩的表面之游離產生物予以 電漿洗淨之電漿洗淨手段。 如依據此有機EL用遮罩潔淨裝置，將藉由雷射手段 所被洗淨的有機EL用遮罩進一步予以電漿洗淨，可以獲 得更高的洗淨效果。藉由雷射手段雖可以獲得99%以上 _ 的洗淨度，但也有極微微量的游離產生物再度附著於有機 EL用遮罩之情形。即使在此情形下，藉由進行電漿洗淨 ，再附著的游離產生物大半被燃燒（灰化），所剩餘者成 爲燃燒氣體，此燃燒氣體藉由上升氣流而被上升，且藉由 去除手段而被去除，可以從有機EL用遮罩將游離產生物 確實地予以潔淨。 本發明之申請專利範圍第11項之有機EL顯示器之 製造裝置，其特徵爲：使用藉由申請專利範圍第1、2、3 φ 、4、5、6、7、8、9或10項所記載之有機EL用遮罩潔 淨裝置而被潔淨的有機EL用遮罩，來製造有機EL顯示 器。另外，本發明之申請專利範圍第12項之有機EL顯 示器，其特徵爲：藉由申請專利範圍第11項所記載之有 機EL顯示器的製造裝置所被製造。 如前述之有機EL用遮罩潔淨裝置，可以適用於有機 EL顯示器之製造裝置。 本發明之申請專利範圍第13項之有機EL用遮罩潔 -12- 201021928 淨方法’爲用以去除附著於有機EL用遮罩的蒸鏟物質之 有機EL用遮罩潔淨方法，其特徵爲：使對前述有機EL 用遮罩的表面照射雷射光，將前述蒸鍍物質予以粉碎所產 生的游離產生物朝上方飛散，藉由空氣之氣流將已飛散的 前述游離產生物予以去除。 本發明之申請專利範圍第14項之有機EL用遮罩潔 淨方法，係如申請專利範圍第1 3項所記載之有機EL用 φ 遮罩潔淨方法，其中前述氣流，係形成於從前述有機EL 用遮罩的表面分開的位置之層流狀態的氣流，且具有沿著 前述EL用遮罩的表面之流動。 本發明之申請專利範圍第1 5項之有機EL用遮罩潔 淨方法，係如申請專利範圍第1 3項所記載之有機EL用 遮罩潔淨方法，其中，於藉由前述氣流來去除照射前述雷 射所產生的前述游離產生物時，對於多數形成於前述有機 EL用遮罩的開口部，從背面朝表面形成上升氣流。 [發明效果] 本發明係藉由使用雷射手段之雷射照射’來將附著於 有機EL用遮罩之蒸鍍物質予以粉碎而成爲游離產生物， 使其朝上方飛散，且藉由設置於從有機EL用遮罩的表面 分開之位置的去除手段來去除游離產生物，能以完全非接 觸方式來完成有機EL用遮罩的潔淨。因此，能夠不對有 機EL用遮罩造成損傷來進行潔淨。 而且，藉由氣流形成手段來形成氣流，且將氣流形成 -13- 201021928 爲層流狀態，從有機EL用遮罩飛散之游離產生物藉由層 流狀態的氣流而被捕捉，不會再度回到有機EL用遮罩， 得以防止游離產生物之再附著，可以獲得高洗淨度。另外 ，不需要薄膜之黏貼機構或剝離機構等，可以謀求機構的 簡化、裝置的小型化。 進而，形成上升氣流形成手段，即使游離產生物朝向 有機EL用遮罩的開口部落下，也不會附著於有機EL用 遮罩的表面。此時，不單是雷射的能量，即使藉由上升氣 流，游離產生物也會上升，得以大幅地使游離產生物上升 ，可以確實地引導至去除手段。 【實施方式】 以下，參照圖面說明本發明之實施型態。第1圖及第 2圖係本發明之有機EL用遮罩潔淨裝置1之槪略構成圖 。本發明之有機EL用遮罩潔淨裝置1，係具備：有機EL 用遮罩2及基座11及搭載工作台12與夾頭部13及移動 @ 部14及雷射光源15及電流鏡16及送風部17以及吸引部 18而槪略地構成。有機EL用遮罩2係於構成有機EL顯 示器之玻璃基板（未圖示出），將作爲發光層之有機材料 蒸鍍於限定的區域來形成圖案所被使用的極薄的金屬板。 伴隨近年來之有機EL顯示器的大畫面化，有機EL用遮 罩2的尺寸也變得非常地大型。以下所使用的有機EL用 遮罩2，係設爲極薄且大型尺寸者。 如第3圖及第4(a)圖所示般，於有機EL用遮罩2 -14- 201021928 的外周安裝有補強框3。爲了於構成有機EL顯示器之玻 ' 璃基板高精度地蒸鍍蒸鍍物質，有機EL用遮罩2的厚度 * 係使用微米級的極薄之金屬板。藉由使有機EL用遮罩2 的厚度成爲極薄，即使蒸鍍於有機EL用遮罩2的有機材 料具有大的角度而飛散，也不會於蒸鍍區域形成陰影，得 ^ 以確保膜厚的均一性。有機EL用遮罩2是極薄且大型的 * 金屬板’無法以單體維持平面狀，爲了保持其之保形性， φ 安裝有補強框3。另外’如可以保持有機El用遮罩2的 保形性’也可以使用補強框3以外的方法。 有機EL用遮罩2係以金屬爲素材，且形成有規則地 排列之多數的開口部4之遮罩板（影像遮罩）。有機EL 用遮罩2雖可以使用各種的金屬，此處適用鈷與鎳之合金 。有機EL用遮罩2係於蒸鍍發光層的有機材料之蒸鍍裝 置（未圖示出）中’使密接於構成有機顯示器之玻璃基板 的狀態下，從蒸鍍源使蒸鍍有機材料（以下，稱爲蒸鍍物 -φ 質）。作爲發光層之蒸鍍物質，可以使用各種物質，例如 可以使用錦錯合物（tris-aluminum: Alq)等之有機金屬 錯合物。另外’也可以將有機金屬錯合物以外的有機化合 物（可以是包含金屬者、不包含金屬者）當成蒸鍍物質使 用。從蒸鍍源所被蒸發的蒸鍍物質，係從有機EL用遮罩 2之形成有開口部4的部分蒸鍍於前述的玻璃基板。藉此 ’得以在對應玻璃基板上的畫素之區域蒸鍍作爲發光層之 蒸鍍物質。 雖然可以使用有機EL用遮罩2以玻璃基板蒸鍍特定 -15- 201021928 圖案之蒸鍍物質，但在蒸鍍時，蒸鍍物質也附著於有機 EL用遮罩2。附著於有機EL用遮罩2的蒸鍍物質於下一 次的蒸鍍製程中，附著於玻璃基板，或使開口部4的開口 面積產生變化等之理由，進行有機EL用遮罩2的潔淨來 進行蒸鍍物質的去除。 有機EL用遮罩潔淨裝置1係被設置於基座11，有機 EL用遮罩2係被搭載於搭載工作台12，夾頭部13係保 持有機EL用遮罩2的補強框3。有機EL用遮罩2係被保 || 持爲蒸鍍面（朝向蒸鍍裝置中之蒸鍍源的面，即蒸鍍物質 附著的面）朝上之方式。如第2圖也有顯示般，於搭載工 作台1 2及有機EL用遮罩2之間設置微小間隔，夾頭部 13保持補強框3。夾頭部13係保持有機EL用遮罩2的 相對2邊之補強框3。另外，夾頭部13也可以是保持補 強框3的3邊或4邊者。 另外，於搭載工作台12的下部具備有作爲移動手段 之移動部14。移動部14係使搭載工作台12朝1方向移 @ 動用的移動手段，可以使用滾珠導螺桿手段或線性電動機 手段等之任意的移動手段。此處係將移動部14的移動方 向設爲第1圖的X方向，將與此X方向正交的方向當成 Y方向。但移動部14也可以設爲能在X方向及Y方向的 2個方向移動。 於基座11的上部配置振盪特定波長的雷射之雷射光 源15。雷射光源15係振盪有機EL用遮罩2的金屬素材 會反應之波長的雷射。在有機EL用遮罩2爲鈷與鎳的合 -16- 201021928 金之情形時，做成振盪該合金會反應之波長域5 32nm附 近的雷射。在有機EL用遮罩2使用其他素材的情形時， • 做成振盪該素材會反應的雷射。從雷射光源15所振盪的 雷射射入電流鏡1 6。電流鏡1 6係使射入的雷射朝向有機 EL用遮罩2反射之反射鏡，成爲使雷射的反射角高速地 ' 變化之雷射掃瞄手段。因此，電流鏡1 6係具備使本身振 ' 動之驅動部（未圖示出），藉由驅動部的振動，射入的雷 0 射之反射角改變，使有機EL用遮罩2中之照射位置改變 。藉由使雷射的反射角朝Y方向改變，雷射往Y方向掃 瞄。藉由雷射光源1 5與電流鏡1 6構成雷射手段，藉由此 雷射手段來進行雷射洗淨。當然雷射手段也可以使用其他 任意的光學構件。 送風部1 7係送風手段，吸引部1 8係吸引手段。吸引 部18係具備回收部18B，混合存在於吸引的空氣之雜質 (後述的游離產生物）被回收於回收部18B。因此，例如 φ 使用過濾器（未圖示出）來將空氣與雜質分離。送風部 17的送風縫隙17Α與吸引部1 8的吸引縫隙1 8Α係設置爲 相向配置，另外，送風縫隙17Α與吸引縫隙18Α係設置 於相同高度的位置。使得來自送風縫隙1 7 Α之送風沿著 有機EL用遮罩2的表面，且藉由吸引縫隙18A之吸引爲 沿著有機EL用遮罩2的表面。 說明以上構造中之動作。從未圖示出之蒸鍍裝置被取 出的有機EL用遮罩2’係藉由搭載工作台12的夾頭部 13而被固定保持著，藉由移動部14而被移動於X方向。 -17- 201021928 有機EL用遮罩2的X方向中之前端位置位於電流鏡16 的下部時（或其前端）時，從雷射光源1 5振盪雷射。藉 由電流鏡16高速振動，使雷射於有機EL用遮罩2的表 面朝Y方向掃瞄。於第1圖及第2圖之例子中，係設爲 進行有機EL用遮罩2的全面之潔淨，電流鏡16係使雷 射的反射角改變，於線上掃瞄有機EL用遮罩2的Y方向 中之端部間，移動部14被朝X方向移動，有機EL用遮 罩2係於X方向及Y方向之2個方向進行面掃瞄，雷射 @ 掃瞄於有機EL用遮罩2的全面。另外，爲了取得Y方向 中之雷射的掃瞄與X方向中之移動的時序，藉由移動部 14之有機EL用遮罩2的移動，以間歇性爲佳。 有機EL用遮罩2係被保持爲蒸鍍面朝上，蒸鎪物質 20成爲膜狀而附著於蒸鍍面。雷射係以有機EL用遮罩2 的表面成爲焦點之方式被照射。而且雷射係具有有機EL 用遮罩2的金屬素材（鈷與鎳的合金）爲反應的波長（ 532nm )，藉由被照射雷射而被給予熱衝擊。藉此，粉碎 馨 力作用於附著於有機EL用遮罩2之蒸鍍物質，成爲游離 產生物而朝上方飛散。此處，蒸鍍物質藉由雷射照射而被 粉碎時，附著於有機EL用遮罩2之蒸鍍物質被粉碎爲具 有微小粒徑之粉體的同時，也產生氣體。因此，游離產生 物不單是微小粉體，也包含氣體。 粉碎的游離產生物爲比重極小的粉體或氣體，藉由使 用雷射之熱衝擊，朝上方順勢地飛散。但如將雷射的強度 設定成過度弱，則蒸鍍物質不會粉碎，且有不朝上方飛散 -18- 201021928 之虞。因此，雷射的強度係設定爲能粉碎蒸鍍物質而使游 ' 離產生物飛散的強度。另一方面，如將雷射的強度設定得 • 過度高，則對有機EL用遮罩2給予過多的熱衝擊’有造 成損傷之虞。因此，爲了使蒸鍍物質20粉碎及飛散’以 設定爲必要最低限度的強度爲佳。例如依據有機EL用遮 ' 罩2的形狀或蒸鍍物質20的材料之附著強度等，將由雷 ' 射光源15所振盪之雷射的強度設定爲最適當。 φ 第4(b)圖係表示有機EL用遮罩2之開口部4的放 大圖。如此圖所示般，有機EL用遮罩2的開口部4之邊 緣部份4E，已採用推拔形狀者爲多。如前述般，基於有 機EL用遮罩2的開口部4之開口面積一部份或全部被堵 塞，蒸鍍精度顯著惡化而成爲不能使用。如第4(b)圖 所示般，開口部4之邊緣部份4E係成爲推拔形狀，即使 是極薄的有機EL用遮罩2之中，成爲更薄的部位，藉由 熱衝擊，有更高的粉碎力作用。因此，此部位的蒸鍍物質 φ 20有非常高的粉碎力作用，且朝上方飛散之能量也變得 . 很強。因此，限定於邊緣部份4Ε之情形時，由雷射光源 15所振盪的雷射之強度，變成不需要設定爲太高。 如第5圖所示般，藉由送風部1 7及吸引部1 8所形成 的層流狀態之氣流3 0得以形成，此氣流3 0係被形成於從 有機EL用遮罩2分開特定間隔之位置，且沿著有機EL 用遮罩2的表面之流動。爲了使氣流30成爲層流狀態， 以特定的風量及風速由送風縫隙17Α送風，另外，從吸 引縫隙1 8 Α進行吸引。爲了做成層流狀態之氣流3 0，風 -19- 201021928 量及風速係設定爲必要的最小限度。另外’並非以朝向有 機EL用遮罩2或接近有機EL用遮罩2之方式來形成氣 流，而是於從有機EL用遮罩2分開某種程度之位置且沿 著有機EL用遮罩2的表面來形成氣流。於有機EL用遮 罩2形成多數的開口部4，氣流如與有機EL用遮罩2衝 擊或接觸時，氣流成爲亂流狀態，微粒化而飛散之灰麈再 度附著於有機EL用遮罩2。因此’形成層流狀態之氣流 3 0° 氣流3 0係形成於從有機EL用遮罩2分開之位置’ 於氣流30與有機EL用遮罩2之間存在有無風區域31。 另外，所謂無風區域3 1係實質上爲無風狀態之沒有流動 的區域，成爲與具有流動之層流狀態的氣流30不同的區 域。即氣流30係形成具有流動的區域’無風區域31係形 成沒有流動的區域。微粒化而飛散之游離產生物21雖通 過無風區域3 1，但此區域沒有流動’不會對游離產生物 21的行進方向造成影響。因此’游離產生物21通過無風 Θ 區域31而進入氣流30’被氣流30的流動所捕捉而被搬 運。如前述般，游離產生物21係極微小之粉體或氣體’ 藉由層流狀態之氣流3 0而被確實地捕捉’朝向吸引部1 8 而被回收。換言之，氣流30成爲搬運游離產生物21之搬 運流。 而且，將氣流3 0做成層流狀態’於其下部形成無風 區域31，密接有機EL用遮罩2的表面之區域不會成爲亂 流。因此，從有機EL·用遮罩2所飛散之游離產生物21 -20- 201021928 不會回到有機EL用遮罩2。此時，氣流30與有機EL用 遮罩2之間做成爲必要之最小限度的間隔。如使該間隔過 ' 度地分開時，微粒化而朝上方飛散之灰塵無法抵達氣流 3〇的高度位置，而成爲無法回收。藉此，從有機EL用遮 罩2 —度去除之游離產生物21不會再度附著於有機EL 用遮罩2’可以發揮極高的潔淨效果。氣流30與有機EL '用遮罩2的間隔，例如可以依據有機EL用遮罩2的開口 φ 部4之面積或開口部4的密度、有機EL用遮罩2的材質 等來決定。 電流鏡16係使雷射於有機EL用遮罩2的Y方向掃 瞄，雷射的掃瞄速度非常地高速。因此，事先於有機EL 用遮罩2的上方涵蓋廣範圍地形成層流狀態的氣流30。 即使是雷射的掃瞄速度非常地高速，於其上方位置一定有 氣流3 0形成，飛散的游離產生物21被氣流3 0的流動確 實地捕捉而搬運。此處，對有機EL用遮罩2的全面進行 -φ 雷射掃瞄，氣流30係設爲涵蓋有機EL用遮罩2的全面 . 以上之範圍而形成。因此，送風部1 7的送風縫隙1 7 A與 吸引部1 8的吸引縫隙1 8A，其縫隙長度係個別比有機EL 用遮罩2的Y方向之長度還長地構成。藉此，可以無剩 餘於回收飛散之游離產生物21。 藉由以上，以雷射將有機EL用遮罩2的蒸鍍物質20 予以粉碎，當成游離產生物21使其朝上方飛散，藉由氣 流30來搬運游離產生物21而予以去除，得以實現藉由完 全非接觸之潔淨。藉此，不會對有機EL用遮罩2造成損 -21 - 201021928 傷而獲得潔淨效果。另外’使氣流30在從有機EL用遮 罩2分開之位置成爲層流狀態，游離產生物21不會回到 有機EL用遮罩2’可以不再附著地被吸引部18所回收。 因此，可不對有機EL用遮罩2造成損傷而確實地進行潔 淨，且不使用薄膜之黏貼機構等，可以謀求機構的簡化及 裝置的小型化。此有機EL用遮罩潔淨裝置1可以發揮極 高的洗淨效果，能夠以99%以上的潔淨度幾乎完全地潔 淨有機EL用遮罩2。 參 於前述之實施型態中，作爲去除從有機EL用遮罩2 所飛散之游離產生物21的去除手段，雖使用層流狀態的 氣流30，但也可以不使用此氣流30。例如從有機EL用 遮罩2分開之方向使產生吸引力，藉由雷射之掃瞄將飛散 之游離產生物21朝正交方向吸引亦可。但在此情形下， 空氣的流動變成亂流狀態，游離產生物21有再附著於有 機EL用遮罩2之可能性。且吸引力對有機EL用遮罩2 作用，有機EL用遮罩2會扭曲或變形。但即使是有機EL φ 用遮罩2基於吸引力，也不會被損傷之具有某種程度的厚 度之情形等，作爲去除手段，也可以是從有機EL用遮罩 2分開之方向使吸引力作用者。 另外，於前述之本實施型態中，藉由對有機EL用遮 罩2的全面照射雷射來進行潔淨，於能夠潔淨有機EL用 遮罩2的特定區域即可的情形時（區域洗淨的情形）’貝0 限定於該區域來使雷射掃瞄。此時，將藉由移動部14之 移動範圍與藉由電流鏡16之反射角的範圍之其中一方或 -22- 201021928 兩方縮小至一部份。另外，於進行區域洗淨的情形，氣流 30的範圍也是可以涵蓋潔淨對象之區域即可，不需要於 • 涵蓋有機EL用遮罩2的全面之區域形成氣流30。 於前述之實施型態中，係藉由移動部14使有機EL 用遮罩2朝X方向移動，電流鏡16係使雷射朝Y方向掃 瞄來進行區域洗淨。移動部14及電流鏡16可以自動控制 • ’藉由此手法，可以自動地進行有機EL用遮罩2的潔淨 ❿ 。另外，即使藉由其他手法，也可以自動地進行潔淨。例 如設爲將有機EL用遮罩2固定的狀態，使電流鏡1 6朝2 個方向振動，來使雷射掃瞄於X方向及Y方向之2個方 向。 但在藉由電流鏡16來使雷射掃瞄之手法的情形，暫 且不論有機EL用遮罩2的中心，端部中，雷射具有大的 角度而射入有機EL用遮罩2。此時，於有機EL用遮罩2 的中心與端部會於洗淨度產生某些差異。另外，有機EL φ 用遮罩2爲大型的金屬板，於Υ方向的雷射掃瞄也需要 . 某種程度之時間。因此，非以雷射掃瞄，而使有機EL用 遮罩2與雷射光源1 5相對地移動來進行區域洗淨亦可。 例如將電流鏡16當成固定的反射鏡來使用’使移動 部14朝X方向及Υ方向之2個方向移動。雷射的照射位 置雖然沒有變化，但藉由移動部14之移動，有機EL·用 遮罩2於2個方向位移，成爲在反射鏡被反射的雷射與有 機EL用遮罩2被相對地移動。在反射鏡被反射之雷射於 有機EL用遮罩2的任何部位都以正交方向射入。因此’ -23- 201021928 不會產生基於射入角不同所引起之洗淨度的差異之問題。 在此情形，雷射手段雖係藉由雷射光源1 5與反射鏡所構 ^ 成，但不使用反射鏡，藉由將雷射光源15的振盪方向成 · 爲有機EL用遮罩2的正交方向，雷射手段成爲藉由雷射 光源15來構成。另外，在此情形，相對移動手段成爲藉 由移動部14所構成。 ‘ 於藉由相對移動來進行區域洗淨的情形，係藉由移動 · 部14使有機EL用遮罩2移動來進行，和能高速地使照 _ 射位置改變的雷射掃瞄相比，潔淨速度變得低速。因此， 於藉由相對移動之區域洗淨中，雷射的光點以使用盡可能 大者爲佳。 另外，於藉由相對移動之區域洗淨中，將搭載有機 EL用遮罩2之搭載工作台12加以固定（即不設置移動部 14 )，而使前述之反射鏡朝2個方向移動亦可。藉此，也 可以進行區域洗淨。另外，將前述之反射鏡與雷射光源 15做成一體之單元來構成，使此單元朝2個方向移動亦 H-可。 接著，參照第6圖來說明變形例1。此變形例1係將 有機EL用遮罩2分割爲複數個區域來進行潔淨之例子。 於第6圖中，將雷射光源15配置於2處（設爲第1雷射 光源15a、第2雷射光源15b )，電流鏡16也配置於2處 (設爲第1電流鏡16a、第2電流鏡16b)。有機EL用遮 罩2被分割爲2個區域（設爲被分割成第1區域2a與第 2區域2b者），第1區域2a係從第1雷射光源1 5a所振 -24- 201021928 盪的雷射藉由第1電流鏡16a被掃瞄來進行潔淨，第 ' 域2b係從第2雷射光源1 5b所振盪的雷射藉由第2 • 鏡16b而被掃瞄來進行潔淨。第1區域2a、第2區: 都相同地附著有蒸鍍物質20，第1雷射光源15a與 雷射光源1 5b都振盪相同波長之雷射。 ' 如第6圖般，將有機EL用遮罩2分割爲2個區 • 藉由第1雷射光源15a之雷射與第2雷射光源15b之 φ 來分擔個別區域以進行潔淨，可以同時地潔淨2個區 且各區域成爲有機EL用遮罩2的一半的區域，可以 地縮短（約縮短一半）潔淨時間。藉此，可以大幅地 有機EL顯示器的生產效率。藉由使雷射光源15與 鏡16之配置台數變多，可以進一步縮短潔淨時間。 接著，利用第7圖來說明變形例2。於變形例1 雖將有機EL用遮罩2於X方向分割爲2個區域，但 形例2中，係於Y方向分割爲2個區域。在此情形 -φ 第1雷射光源15a與第2雷射光源15b於Υ方向並行 . ，另外，將第1電流鏡16a與第2電流鏡16b於Y方 行配置。由第1雷射光源1 5a所振盪的雷射進行第1 2a.之掃瞄，由第2雷射光源15b所振盪的雷射進行 區域2b之掃瞄。如前述般，藉由雷射掃瞄之潔淨， 淨度或掃瞄速度等之觀點而言，其掃瞄寬度以盡可能 爲佳。於變形例2中，係於Y方向分割爲2個區域 猫寬度和第1圖之例子相比成爲一半。因此，雷射射 區域之 γ方向中之端部時的射入角可以變小，變成 2區 電流 咸2b 第2 域， 雷射 域， 大幅 提升 電流 中， 在變 ，將 配置 向並 區域 第2 從洗 窄者 ，掃 入各 可以 -25- 201021928 降低洗淨度的差異。另外，掃瞄時間也可以大幅地減少。 因此，可以進行高速且洗淨度高的潔淨。 接著，使用第8圖來說明變形例3。於此變形例3中 ，如第8圖所示般，使用稜鏡19將從1個雷射光源15所 振盪的雷射藉由稜鏡19予以分割。棱鏡19係將射入光的 一部份予以反射，使一部份透過之光束分離器，發揮該功 能之功能膜爲對於射入角以45度所形成之光學元件。在 使用此稜鏡19之情形，無法進行雷射之掃瞄，做成使移 @ 動部14在X方向及Y方向移動，來進行區域洗淨。在變 形例3中，係將有機EL用遮罩2分割爲2個區域，使用 藉由稜鏡1 9所被分岔之2個雷射來進行潔淨，潔淨時間 大約可以縮短爲一半。 如前述般，於藉由移動部1 4之相對移動的潔淨，就 潔淨速度而言，比藉由雷射掃瞄之潔淨爲低速，但對於有 機EL用遮罩2能以正交方向來射入雷射，就洗淨度而言 ，較爲有利。因此’藉由複數配置稜鏡19’且設置對於 ❹ 有機EL用遮罩2爲正交之複數個雷射，能夠進行短時間 且洗淨度高的潔淨。此時，來自雷射光源15之雷射的光 點直徑以大者爲佳。另外，即使不使用棱鏡1 9 ’例如配 置複數個雷射光源15’於正交於有機EL用遮罩2之方向 照射複數的雷射亦可。 接著，說明變形例4。此變形例4係從有機EL用遮 罩2的背面側形成上升氣流的例子。如前述般，對有機 EL用遮罩2照射雷射使游離產生物2 1飛散’藉由氣流 -26- 201021928 30使已飛散的游離產生物21幾乎完全地去除。但游離產 ' 生物21爲比重極小的粉體或氣體，雖可發揮幾乎100% • 之去除率，但極微量之游離產生物21未被氣流30所去除 而有落下的可能，有無法發揮完全100%之去除率的情形 〇 ' 特別是，有機EL用遮罩2是需要極爲小心處理的金 • 屬板，如照射過度高強度的雷射時，大的衝擊作用於有機 φ EL用遮罩2，而有造成損傷之虞。因此，雷射光源15的 振盪強度無法設定得太高，無法對有機EL用遮罩2給予 太強的能量，有無法飛散至氣流3 0的位置之情形。即作 爲雷射光源1 5的設定強度，要被調節爲能將蒸鍍物質20 粉碎而使飛散至氣流3 0的位置之必要最小限度的強度。 因此，雖然已飛散的游離產生物21幾乎都到達氣流30的 位置，但有極小一部份無法到達氣流3 0而落下的情形。 特別是如第4(b)圖所示般，邊緣部份4E做成推拔形狀 .φ 的關係，形成斜面，將附著於此邊緣部份4Ε的蒸鍍物質 20予以粉碎時之游離產生物21，有無法到達氣流30的位 置之傾向。 無法到達氣流30的游離產生物21，會朝向有機EL 用遮罩2落下，再度附著於有機EL用遮罩2。此時，不 單是有機EL用遮罩2的表面（蒸鏟時朝向蒸鍍源之面） ，游離產生物21也再度附著於背面（表面的相反面）。 如第3圖所示般，於有機EL用遮罩2形成有多數的開口 部4，且開口部4的孔徑比游離產生物21的尺寸大很多 -27- 201021928 ’游離產生物21從開口部4落下。而且，落下開口部4 之游離產生物2】被捲入有機EL用遮罩2的背面，再度 附著於有機EL用遮罩2的背面。有機EL用遮罩2的背 面係於蒸鍍時面接玻璃基板的面，游離產生物21如附著 於背面時’在新的玻璃基板之蒸鍍時，附著於背面的游離 產生物21會被轉印於玻璃基板而污損該玻璃基板。 因此’設置如第9圖及第1〇圖所示之上升氣流形成 裝置40。如第9圖及第10圖所示般，上升氣流形成裝置 參 4〇係具備：框架41與空氣供給部42與多數的空氣噴出 孔43及夾頭部44所槪略地構成。另外，空氣噴出孔43 係以虛線表示。框架4 1係形成內部被閉鎖的空間之箱體 ’於側面形成有空氣供給部42。另外，於其上面形成有 多數的空氣噴出孔43。空氣供給部42係對框架41供給 空氣用之供給部，由此空氣供給部42所供給的空氣流入 框架41的內部，從形成於上面之多數的空氣噴出孔43朝 上方噴出。於框架41的上面均等且分散地配置各空氣噴 ❾ 出孔43,於框架41的上面形成朝上方之上升氣流。 夾頭部44係保持有機EL用遮罩2之構件，被固定 地配置於框架41的上面。有機EL用遮罩2係被夾頭部 44保持爲蒸鎪面（朝向蒸鍍裝置中之蒸鍍源的面，即蒸 鍍物質20附著之面）朝上。另外，將夾頭部44做成L字 狀，成爲於有機EL用遮罩2與框架41的上面之間設置 有微小的間隔。另外，只要是能於有機EL用遮罩2與框 架4 1的上面之間保有微小的間隔者，可以採用任意的構 -28- 201021928 造。 ' 藉由以上的上升氣流形成裝置40，對於有機EL用遮 • 罩2在進行使用雷射手段之雷射洗淨之間，成爲經常形成 有上升氣流。因此，從空氣供給部42對框架4 1供給空氣 ，經常地於框架41的上面全體形成上升氣流。第11圖的 ' UF係表示形成於有機EL用遮罩2的開口部4之上升氣流 • 。於有機EL用遮罩2的正下方之區域，藉由上升氣流形 φ 成裝置40形成有上升氣流UF，於有機EL用遮罩2的開 口部4，從背面2R朝向表面2S形成有上升氣流UF。 如前述般，於進行雷射洗淨時，即使沒有到達氣流 30的一部份之游離產生物落下，且朝向開口部4落下， 藉由形成於開口部4之上升氣流UF，落下的游離產生物 再度被朝上方推回的關係，游離產生物不會被捲入有機 EL用遮罩2的背面2R。因此，游離產生物不會再度附著 於背面2R。 φ 上升氣流UF基本上係形成爲不使游離產生物再度附 , 著於背面2R者，此外，也發揮使在雷射洗淨時飛散的游 離產生物上升用之輔助的功能。附著於有機EL用遮罩2 之蒸鍍物質20，藉由雷射被粉碎，游離產生物欲朝上方 飛散，藉由形成上升氣流UF，受到上升氣流UF的流動 ，游離產生物更欲向上高升。即不單藉由雷射之飛散，基 於藉由雷射之飛散與上升氣流UF的相乘效果，游離產生 物更爲上升。 如前述般，爲了避免過多的衝擊作用於有機EL用遮 -29- 201021928 罩2而造成損傷，雷射光源15所振盪的雷射強度無法設 定得太高。因此，爲了游離產生物之飛散無法給予充分的 衝擊，在只藉由此衝擊的能量來使游離產生物飛散的情形 ，無法飛散至太高的位置。但是從有機EL用遮罩2的下 方形成有上升氣流UF，此上升氣流UF當輔助，使游離 產生物進一步朝上上升。因此，即使不將雷射光源15的 振盪強度設定得很高，藉由上升氣流UF的輔助，也可以 充分地使游離產生物上升至氣流3 0的位置。 _ 上升氣流形成裝置40係以非常低風量之方式來形成 上升氣流UF。本來游離產生物就是比重極低的粉體或氣 體等，即使設定爲非常低風量，游離產生物也可以藉由上 升氣流UF而高高地上升。另一方面，框架41係具有少 許的間隔而成爲和有機EL用遮罩2分開的狀態，有機EL 用遮罩2的背面2R成爲直接接受上升氣流UF的狀態。 有機EL用遮罩2爲極薄且大型的金屬板，如將上升氣流 UF的風量胡亂地設定得太高，有機EL用遮罩2會產生扭 曲或變形，有對有機EL用遮罩2造成損傷之虞。由此點 而言，上升氣流UF以設定爲低風量爲佳。 作爲上升氣流UF，至少設定爲將朝向有機EL用遮 罩2的開口部4落下的游離產生物從開口部4推回之風量 。另外，在以輔助游離產生物的上升之方式來使上升氣流 UF發揮功能的情形時，設定爲更大的風量。此時的風量 係依據雷射光源15的雷射之振盪強度來改變，在雷射的 振盪強度大的情形時，將上升氣流UF的風量設定得小些 -30- 201021928 ，在振盪強度小的情形時，將上升氣流 ' 大些。但要抑制上升氣流UF成爲不對 造成損傷之程度的風量。 因此，於進行雷射洗淨時，經常藉 置40從有機EL用遮罩2的背面2R車 * 升氣流，落下的游離產生物不會再度阳 ' 外，藉由上升氣流在雷射洗淨時，經常 φ 輔助游離產生物的上升，使游離產生物 。藉此，可以將從有機EL用遮罩2所 藉由氣流30確實地去除，能以極高的 EL用遮罩2。 接著，利用第12圖來說明變形例 EL用遮罩潔淨裝置來進行雷射洗淨， ’且如形成上升氣流UF，可以使潔淨 使是如此，也有極爲微少的游離產生物 Ό 度附著於有機EL用遮罩2。另外，於窄 . 開口部4形成有上升氣流U F，即使游 非附著於背面2R而是附著於表面2S。 淨裝置50，係考慮藉由使用有機EL用 淨下，附著有少許之游離產生物的情形 EL用遮罩2的表面2S所設置者。因 5〇係被配置於將藉由有機EL用遮罩潔 後的有機EL用遮罩2予以潔淨之位置 罩潔淨裝置之後段側（下游側）。 UF的風量設定得 有機EL用遮罩2 由上升氣流形成裝 I向表面2 S形成上 (•著於背面2 R。另 地形成，上升氣流 朝上方高高地飛散 飛散的游離產生物 洗淨度來潔淨有機 5。藉由使用有機 幾乎完全地被潔淨 度更爲完全。但即 21未被去除而再 「機EL用遮罩2的 離產生物附著，並 第12圖之電漿洗 遮罩潔淨裝置之潔 時，再度潔淨有機 此，電漿洗淨裝置 淨裝置之潔淨結束 ，即有機EL用遮 -31 - 201021928 電漿洗淨裝置50係具備：腔體51與上部電極52及 下部電極53而構成，與其他的有機EL用遮罩潔淨裝置 被賦予相同符號的構成，則與前述者並無不同。腔體51 係於其上部設置上部電極52。另外，於基座Π設置空氣 噴出孔43。在電漿洗淨裝置50中，爲了對有機EL用遮 罩2進行電漿洗淨，藉由任意的氣體供給手段（未圖示出 )將電漿反應性氣體（例如，氬等之惰性氣體）供給至上 部電極52與下部電極53之間（第12圖中，上部電極52 _ 之正下方）。然後，藉由對下部電極53施加高頻電壓， 電漿反應性氣體電漿化而產生電漿34。藉由將此電漿34 照射於有機EL用遮罩2’有機EL用遮罩2的表面之游離 產生物21被去除而被洗淨。 少量附著於有機EL用遮罩2之游離產生物21’藉由 電漿34幾乎燃燒（灰化）而氣體化，一部份成爲燃燒氣 體而從有機EL用遮罩2游離。游離之燃燒氣體朝有機EL 用遮罩2落下，有從開口部4捲入有機EL用遮罩2的背 鲁 面2R之虞。 因此，於有機EL用遮罩2的下部設置上升氣流形成 裝置40，從有機EL用遮罩2的背面2R朝向表面2S形成 上升氣流UF。藉此，上升氣流UF將落下開口部4之燃 燒氣體推回，不使燃燒氣體捲入背面2R。而且燃燒氣體 藉由上升氣流UF而上升，藉由氣流30被搬運而被去除 。因此，燃燒氣體不會附著於有機EL用遮罩2的表面2S ，可以獲得幾乎完全之潔淨度° -32- 201021928 藉由以上，組合有機EL用遮罩潔淨裝置與電漿 ' 裝置50做成有機EL用遮罩潔淨裝置，可以發揮更高 • 洗淨效果。另外，雖然針對電漿洗淨裝置50與有機 用遮罩潔淨裝置具備有上升氣流形成裝置40之例子做 明，但上升氣流形成裝置40也可以設置於2個裝置之 " 何一方，也可以設置於2個裝置，也可以都不設置於任 裝置。 φ 於雷射潔淨中，飛散之游離產生物21藉由氣流30 被搬運去除，於電漿洗淨中，燃燒氣體藉由氣流30被 運去除。因此，即使不形成上升氣流UF，也可以獲得 洗淨效果，但藉由於2個裝置之各個具備上升氣流形成 置40，可以防止對有機EL用遮罩2之背面2R的捲入 得以獲得更高的洗淨效果。 另外，於第12圖之例子中，上升氣流形成裝置40 做成藉由從多數排列於框架41的上面之空氣噴出孔43 •φ 噴出的氣流來形成上升氣流UF，但並不限定於此，也 - 以藉由其他的手段。例如藉由使有機EL用遮罩的背面 側下部成爲正壓狀態，使表面2S側上部成爲負壓狀態 落下的游離產生物不會捲入有機EL用遮罩2的背面 側。 【圖式簡單說明】 弟1圖係表不潔淨裝置之槪略構成的斜視圖。 第2圖係表示潔淨裝置之槪略構成的剖面圖。 淨 的 EL 說 任 何 而 搬 局 裝As described above, the mask for organic EL is an extremely thin metal plate, and even if it is a very small force of φ, it may be damaged by distortion or deformation. In addition, as the organic EL display has been enlarged in recent years, the size of the mask for organic EL has also become large, and the processing of a large and extremely thin mask for organic EL needs to be extremely fine. In the technique of Patent Document 1, the peeling of the film of the organic EL mask is performed by peeling off against the adhesive force, and excessive force acts on the mask for the organic EL. As a result, the organic EL mask is given a great damage. In the case of the patent document 1, the organic material is peeled off from the organic EL mask by the laser, but the -7-201021928 film is exposed to the mask for the organic EL in order to remove the peeled organic material. It is not done in a non-contact manner. Further, as a film, a laser-transmissive material (polyethylene terephthalate) is used, but even if a transparent film is used, the laser is attenuated. Therefore, it is impossible to give sufficient energy to the organic EL mask, and it is impossible to exhibit a high cleansing effect. Further, there is a need for a dedicated mechanism for adhering and peeling a film, which has a problem that the mechanism is complicated and the device is enlarged. In particular, as the mask for organic EL becomes large, the size of the film also becomes large, and the problem of complication of the mechanism and the large size of the device becomes more remarkable. Therefore, an object of the present invention is to remove the steamed shovel from the substrate in a completely non-contact state when the deposited material adhered to the organic EL mask is removed. [Means for Solving the Problem] In order to solve the above problems, the mask cleaning apparatus for organic EL according to the first aspect of the present invention is an organic EL for removing a vapor deposition material adhering to an organic EL _ mask. A mask cleaning apparatus characterized by comprising: a laser device that irradiates a surface of the organic EL mask with laser light, and scatters the vapor-deposited material to cause a free product to scatter upward; and The means for removing the aforementioned free product is removed at a position where the surface of the mask for the organic EL is separated. According to the mask cleaning apparatus for the organic EL, the vapor deposition material adhering to the mask for the organic EL is pulverized into a free product, which is scattered upward, and is provided on the surface of the mask for the organic EL. The -8-201021928 position is removed to remove free products, and the organic EL mask can be cleaned without contact with solids or liquids. The mask cleaning apparatus for an organic EL according to the second aspect of the invention of the present invention, wherein the removing means is formed to be transported and scattered. The gas flow forming means for the gas stream which is removed by the free product. - According to the mask cleaning device for organic EL, the scattered free product can be removed by the air flow formed at a position separated by the surface of the organic EL mask. A mask cleaning apparatus for an organic EL according to the invention of claim 2, wherein the airflow is formed from the organic EL mask. The flow of the laminar flow at a position where the surface of the cover is separated, and has a flow along the surface of the aforementioned EL mask. According to the mask cleaning device for the organic EL, the airflow becomes a laminar flow state separated from the surface of the organic φ EL mask, and is formed along the airflow. The flow of the surface of the mask of the machine EL. By forming a gas stream in a laminar flow state above the mask for the organic EL, the scattered free product is transported by the airflow, and the airflow is formed at a position separated from the surface of the organic EL mask, and the mask for the organic EL is used. The area directly above does not cause turbulence. As a result, the mask for the organic EL is not returned again, and the free product is not attached to the mask for the organic EL again, and an extremely high cleaning effect can be obtained. The mask cleaning apparatus for organic EL according to the fourth aspect of the invention is the ninth or third aspect of the invention, in the mask cleaning apparatus for organic EL -9-201021928, wherein: The laser scans the laser scanning means of the surface of the aforementioned organic EL mask. According to this mask cleaning apparatus for organic EL, by scanning the laser, it is possible to clean a specific region of the mask for the organic EL. The scanning range of the laser can be either a comprehensive mask for the organic EL or a part of the area. The mask cleaning apparatus for organic EL according to the invention of claim 5, wherein the mask for cleaning the organic EL according to the second or third aspect of the invention is provided with the mask for the organic EL. The relative movement means for moving the cover relative to the aforementioned laser means. According to the mask cleaning apparatus for organic EL, a specific region of the mask for the organic EL can be cleaned by relatively moving the organic EL mask and the laser means. The relative movement means may be such that the organic EL mask and the laser means can be moved relative to each other, and one or both of the organic EL mask and the laser means can be moved. The mask cleaning apparatus for an organic EL according to the sixth aspect of the invention is the mask cleaning apparatus for organic EL according to the fourth or fifth aspect of the invention, wherein the organic EL mask is used. Different areas of the hood are respectively irradiated with lasers, and a plurality of the aforementioned laser means are provided. According to the mask cleaning apparatus for organic EL, the organic EL mask can be cleaned by dividing the area by a plurality of laser means, and the cleaning can be performed at a high speed. A mask cleaning apparatus for an organic EL according to claim 7 of the present invention is the apparatus for cleaning an organic EL according to claim 3, wherein the airflow forming means includes: The suction means provided at a position separated from the above-mentioned "interlacing of the EL" is only necessary to separate the space required for forming the laminar flow state. According to the mask cleaning apparatus for organic EL, the suction means is attached to the surface of the organic EL mask and is separated from the surface of the organic EL mask, so that the mask can be used from the organic EL mask. The position of the surface is separated & the position of the laminar flow. The mask cleaning apparatus for an organic EL according to claim 7 of the invention of the present invention, wherein the airflow forming means is configured to face the suction Means of sending air to the wind. According to the mask cleaning apparatus for organic EL, by combining the suction means and the air blowing means, it is possible to travel the flow in a stable laminar flow state. The mask cleaning apparatus for an organic EL according to the invention of claim 9 is the mask φ cleaning apparatus for organic EL according to the first aspect of the invention, wherein the organic EL is used for the organic EL. _ The opening portion of the mask forms an ascending airflow forming means for forming an ascending airflow from the back surface toward the surface. According to the mask cleaning apparatus for organic EL, an upward flow is formed from the back surface of the opening of the organic EL mask toward the surface, and even if the free product is directed toward the opening, it is pushed back by the ascending airflow, and the volume is not rolled. Attached to the back. In addition, not only the energy of the laser, but also the free product is raised by the ascending air current, and the free product can be reliably guided to the removal means, and the cleaning with a very high degree of cleanliness can be performed. -11 - 201021928 The mask cleaning apparatus for organic EL according to claim 10 of the invention of claim 10, wherein the mask cleaning apparatus for organic EL according to the first aspect of the invention is provided with: On the rear side of the means, a plasma cleaning means for plasma-cleaning the free product adhering to the surface of the organic EL mask. According to the mask cleaning apparatus for organic EL, the organic EL mask which has been cleaned by the laser means is further plasma-cleaned, and a higher washing effect can be obtained. Although the cleaning degree of 99% or more of _ can be obtained by the laser method, there is also a case where a very small amount of free product reattaches to the mask for the organic EL. Even in this case, by performing plasma cleaning, most of the re-attached free products are burned (ashed), and the rest become combustion gases, which are raised by the ascending airflow, and are removed by By removing the means, the free product can be reliably cleaned from the mask for the organic EL. The apparatus for manufacturing an organic EL display according to claim 11 of the present invention is characterized in that: the use of the patent scopes 1, 2, 3 φ, 4, 5, 6, 7, 8, 9, or 10 An organic EL display is manufactured by using a mask for an organic EL that is cleaned by a mask cleaning device. The organic EL display of claim 12 of the present invention is characterized in that it is manufactured by the apparatus for manufacturing an organic EL display according to claim 11. The mask cleaning apparatus for organic EL described above can be applied to a manufacturing apparatus of an organic EL display. The mask for cleaning an organic EL according to the thirteenth aspect of the invention of the present invention is a mask cleaning method for an organic EL for removing a steaming shovel substance attached to a mask for an organic EL. The surface of the organic EL mask is irradiated with laser light, and the free product generated by pulverizing the vapor deposition material is scattered upward, and the scattered free product is removed by the air flow. The method for cleaning a mask for an organic EL according to the invention of claim 14 is the φ mask cleaning method for organic EL according to the first aspect of the invention, wherein the gas stream is formed from the organic EL The flow of the laminar flow at a position separated by the surface of the mask, and having a flow along the surface of the aforementioned EL mask. The method for cleaning a mask for an organic EL according to the above aspect of the invention, wherein the method of removing the illuminating by the airflow is In the case of the above-described free product generated by the laser, an ascending air current is formed from the back surface toward the surface of the opening formed in the organic EL mask. [Effect of the Invention] In the present invention, a vapor deposition material adhering to a mask for an organic EL is pulverized by a laser irradiation using a laser device to form a free-form material, which is scattered upward, and is provided by The removal of the free-generating material is removed from the position where the surface of the organic EL mask is separated, and the mask for the organic EL can be cleaned in a completely non-contact manner. Therefore, it is possible to clean without causing damage to the organic EL mask. Moreover, the airflow is formed by the airflow forming means, and the airflow is formed into a laminar flow state from 13 to 201021928, and the free-generating material scattered from the organic EL mask is captured by the laminar flow state, and will not be returned again. In the mask for organic EL, it is possible to prevent re-adhesion of free products and to obtain high cleanliness. Further, the film sticking mechanism or the peeling mechanism is not required, and the mechanism can be simplified and the device can be downsized. Further, the upward flow forming means is formed so that the free generated product does not adhere to the surface of the organic EL mask even if it faces the opening of the organic EL mask. At this time, not only the energy of the laser, but also the free product rises by the ascending air current, and the free product can be greatly increased, and the removal means can be surely guided. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Fig. 1 and Fig. 2 are schematic views showing the outline of the mask cleaning device 1 for organic EL of the present invention. The mask cleaning apparatus 1 for an organic EL according to the present invention includes a mask 2 for an organic EL, a susceptor 11, a mounting table 12, a chuck portion 13 and a moving @ portion 14, a laser light source 15 and a current mirror 16 and The air blowing unit 17 and the suction unit 18 are configured in abbreviated manner. The organic EL mask 2 is attached to a glass substrate (not shown) constituting the organic EL display, and an organic material which is a light-emitting layer is deposited on a limited region to form an extremely thin metal plate. With the large screen of the organic EL display in recent years, the size of the mask 2 for organic EL has also become very large. The mask 2 for organic EL used below is an extremely thin and large size. As shown in Fig. 3 and Fig. 4(a), a reinforcing frame 3 is attached to the outer periphery of the organic EL mask 2-14-201021928. In order to deposit the vapor deposition material with high precision in the glass substrate constituting the organic EL display, the thickness of the mask 2 for the organic EL is a very thin metal plate of a micron order. By making the thickness of the organic EL mask 2 extremely thin, even if the organic material deposited on the organic EL mask 2 has a large angle and is scattered, it does not form a shadow in the vapor deposition region, and the film is ensured. Thick uniformity. The organic EL mask 2 is extremely thin and large. * The metal plate ' cannot be maintained in a planar shape by a single body, and the reinforcing frame 3 is attached to φ in order to maintain its shape retaining property. Further, a method other than the reinforcing frame 3 may be used as the shape retaining property of the organic EL mask 2 can be maintained. The organic EL mask 2 is made of a metal material, and is formed with a mask (image mask) of a plurality of openings 4 that are regularly arranged. For the organic EL mask 2, various metals can be used, and an alloy of cobalt and nickel is used here. In the vapor deposition device (not shown) of the organic material for vapor-depositing the light-emitting layer, the organic EL mask 2 is in a state in which it is adhered to the glass substrate constituting the organic display, and the organic material is vapor-deposited from the vapor deposition source ( Hereinafter, it is called a vapor deposition material - φ mass). As the vapor deposition material of the light-emitting layer, various materials can be used. For example, an organometallic complex such as tris-aluminum (Alq) can be used. Further, an organic compound other than the organometallic complex (which may be a metal-containing or metal-free material) may be used as the vapor deposition material. The vapor deposition material evaporated from the vapor deposition source is deposited on the glass substrate from the portion of the organic EL mask 2 where the opening 4 is formed. Thereby, it is possible to evaporate a vapor deposition material as a light-emitting layer in a region corresponding to a pixel on the glass substrate. Although the vapor deposition material of the specific -15-201021928 pattern can be deposited on the glass substrate by using the mask 2 for organic EL, the vapor deposition material adheres to the mask 2 for organic EL at the time of vapor deposition. The vapor deposition material adhering to the organic EL mask 2 is adhered to the glass substrate in the next vapor deposition process, or the opening area of the opening 4 is changed, and the organic EL mask 2 is cleaned. The removal of the vapor deposition material is performed. The organic EL mask cleaning device 1 is provided on the susceptor 11, and the organic EL mask 2 is mounted on the mounting table 12, and the nip head 13 holds the reinforcing frame 3 of the machine EL mask 2. The organic EL mask 2 is protected. The method is such that the vapor deposition surface (the surface facing the vapor deposition source in the vapor deposition device, that is, the surface on which the vapor deposition material adheres) faces upward. As shown in Fig. 2, a small space is provided between the mounting table 12 and the organic EL mask 2, and the chuck portion 13 holds the reinforcing frame 3. The chuck portion 13 holds the reinforcing frame 3 of the opposite sides of the mask 2 for organic EL. Further, the chuck portion 13 may be one or three sides of the reinforcing frame 3. Further, a moving portion 14 as a moving means is provided at a lower portion of the mounting table 12. The moving unit 14 is a moving means for moving the mounting table 12 in one direction, and any moving means such as a ball screw mechanism or a linear motor means can be used. Here, the moving direction of the moving portion 14 is set to the X direction of Fig. 1, and the direction orthogonal to the X direction is referred to as the Y direction. However, the moving unit 14 can also be moved in two directions in the X direction and the Y direction. A laser light source 15 that oscillates a laser beam of a specific wavelength is disposed on the upper portion of the susceptor 11. The laser light source 15 is a laser that oscillates the wavelength at which the metal material of the mask 2 for organic EL is reacted. In the case where the mask 2 for the organic EL is a combination of cobalt and nickel -16 - 201021928 gold, a laser having a wavelength range of about 5 32 nm which is oscillated by the alloy is formed. When using other materials in the mask 2 for organic EL, • Make a laser that oscillates the material to react. The laser oscillated from the laser source 15 is incident on the current mirror 16. The current mirror 16 is a laser scanning means that causes the incident laser to be reflected toward the organic EL mask 2 to become a laser scanning device that changes the reflection angle of the laser at a high speed. Therefore, the current mirror 16 is provided with a driving unit (not shown) that vibrates itself, and the reflection angle of the incident laser beam is changed by the vibration of the driving unit, so that the organic EL mask 2 is The illumination position changes. By changing the reflection angle of the laser toward the Y direction, the laser scans in the Y direction. The laser light source 15 and the current mirror 16 constitute a laser, and the laser is washed by the laser. Of course, any other optical component can be used by the laser means. The air blowing unit 17 is a blowing means, and the suction unit 18 is a suction means. The suction unit 18 includes a recovery unit 18B, and impurities (free products to be described later) which are mixed in the suction air are collected in the collection unit 18B. Thus, for example, φ uses a filter (not shown) to separate air from impurities. The air blowing slit 17 of the air blowing portion 17 and the suction slit 18 of the suction portion 18 are disposed to face each other, and the air blowing slit 17 and the suction slit 18 are disposed at the same height. The air blow from the air blowing slit 17 is along the surface of the organic EL mask 2, and the suction by the suction slit 18A is along the surface of the organic EL mask 2. Explain the actions in the above construction. The organic EL mask 2' taken out from the vapor deposition device not shown is fixedly held by the chuck portion 13 of the mounting table 12, and is moved in the X direction by the moving portion 14. -17- 201021928 When the front end position of the organic EL mask 2 in the X direction is located at the lower portion of the current mirror 16 (or its front end), the laser light is oscillated from the laser light source 15. By the high-speed vibration of the current mirror 16, the laser is scanned in the Y direction on the surface of the organic EL mask 2. In the example of FIG. 1 and FIG. 2, it is assumed that the organic EL mask 2 is completely cleaned, and the current mirror 16 changes the reflection angle of the laser to scan the organic EL mask 2 on the line. The moving portion 14 is moved in the X direction between the ends in the Y direction, and the organic EL mask 2 is scanned in two directions in the X direction and the Y direction, and the laser is scanned in the organic EL mask. 2 comprehensive. Further, in order to obtain the timing of the scanning of the laser in the Y direction and the movement in the X direction, the movement of the organic EL mask 2 by the moving portion 14 is preferably intermittent. The organic EL mask 2 is held such that the vapor deposition surface faces upward, and the vapor deposition material 20 is in a film form and adheres to the vapor deposition surface. The laser beam is irradiated so that the surface of the mask 2 for organic EL becomes a focus. Further, the laser system has a wavelength (532 nm) at which a metal material (an alloy of cobalt and nickel) of the organic EL mask 2 is reacted, and is subjected to thermal shock by being irradiated with a laser. As a result, the pulverization force acts on the vapor deposition material adhering to the organic EL mask 2, and becomes a free product and scatters upward. When the vapor deposition material is pulverized by the laser irradiation, the vapor deposition material adhering to the organic EL mask 2 is pulverized into a powder having a fine particle diameter, and a gas is also generated. Therefore, the free product is not only a fine powder but also a gas. The pulverized free product is a powder or gas having a very small specific gravity, and is scattered upward by using a thermal shock of a laser. However, if the intensity of the laser is set to be too weak, the vapor deposition material will not be pulverized, and it will not fly upwards -18-201021928. Therefore, the intensity of the laser is set to be such that the vapor deposition material can be pulverized to cause the scattering of the product. On the other hand, if the intensity of the laser is set to be excessively high, excessive thermal shock is applied to the organic EL mask 2, which causes damage. Therefore, in order to pulverize and scatter the vapor deposition material 20, it is preferable to set the minimum strength to be necessary. For example, the intensity of the laser oscillated by the laser light source 15 is set to be optimum according to the shape of the mask 2 for the organic EL or the adhesion strength of the material of the vapor deposition material 20. φ Fig. 4(b) is an enlarged view showing the opening 4 of the mask 2 for organic EL. As shown in the figure, the edge portion 4E of the opening portion 4 of the mask 2 for organic EL has been pushed and removed. As described above, the opening area of the opening 4 based on the organic EL mask 2 is partially or completely blocked, and the vapor deposition accuracy is remarkably deteriorated, so that it cannot be used. As shown in Fig. 4(b), the edge portion 4E of the opening portion 4 has a push-pull shape, and even a thinner organic EL mask 2 has a thinner portion, and is thermally shocked. It has a higher pulverizing effect. Therefore, the vapor deposition material φ 20 at this portion has a very high pulverizing force, and the energy of scattering upward also becomes. Very strong. Therefore, when the edge portion 4 is limited, the intensity of the laser oscillated by the laser light source 15 does not need to be set too high. As shown in Fig. 5, the air flow 30 in the laminar flow state formed by the air blowing portion 17 and the suction portion 18 is formed, and the air current 30 is formed at a specific interval from the organic EL mask 2 The position is along the flow of the surface of the mask 2 for the organic EL. In order to make the airflow 30 into a laminar flow state, air is blown by the air blowing slit 17 at a specific air volume and wind speed, and suction is performed from the suction slit 18 8 . In order to create a laminar flow of airflow 3, the wind -19-201021928 quantity and wind speed are set to the minimum necessary. In addition, the airflow is not formed so as to face the organic EL mask 2 or the organic EL mask 2, but is separated from the organic EL mask 2 to some extent and along the organic EL mask 2 The surface to form the airflow. In the organic EL mask 2, a plurality of openings 4 are formed, and when the airflow is impacted or contacted with the organic EL mask 2, the airflow is in a turbulent state, and the ash which is micronized and scattered is again adhered to the organic EL mask 2 . Therefore, the air flow in the laminar flow state is formed at a position separated from the organic EL mask 2, and the airless region 31 exists between the air current 30 and the organic EL mask 2. Further, the wind-free region 31 is a region that is substantially in a windless state and does not flow, and is a region different from the airflow 30 having a laminar flow state. That is, the air flow 30 forms a region having a flow, and the windless region 31 forms a region where there is no flow. The atomized and scattered free product 21 passes through the windless region 3 1, but no flow in this region does not affect the traveling direction of the free product 21. Therefore, the free product 21 is transported by the flow of the air stream 30 through the airless region 31 and entering the air stream 30'. As described above, the free-generating material 21 is extremely finely powdery or gas' is reliably captured by the gas flow 30 in the laminar flow direction and is recovered toward the suction portion 18. In other words, the air stream 30 serves as a transport stream for transporting the free product 21. Further, the air flow 30 is made into a laminar flow state, and the windless region 31 is formed in the lower portion thereof, and the region of the surface of the organic EL mask 2 is not turbulent. Therefore, the free-generating material 21 -20-201021928 scattered from the organic EL·mask 2 does not return to the mask 2 for organic EL. At this time, a minimum interval between the airflow 30 and the organic EL mask 2 is required. When the interval is separated by 'degrees', the dust that is atomized and scattered upward cannot reach the height position of the airflow, and cannot be recovered. As a result, the free-generating material 21 removed from the organic EL mask can be prevented from adhering again to the organic EL mask 2' to exhibit an extremely high cleaning effect. The distance between the airflow 30 and the organic EL's mask 2 can be determined, for example, depending on the area of the opening φ portion 4 of the organic EL mask 2, the density of the opening 4, the material of the organic EL mask 2, and the like. The current mirror 16 scans the laser in the Y direction of the organic EL mask 2, and the scanning speed of the laser is extremely high. Therefore, the airflow 30 in a laminar flow state is widely formed in advance over the mask 2 for organic EL. Even if the scanning speed of the laser is very high, a flow of air 30 must be formed at the upper position, and the scattered free product 21 is reliably captured and transported by the flow of the air stream 30. Here, the -φ laser scanning is performed on the entire organic EL mask 2, and the airflow 30 is set to cover the entire organic EL mask 2. Formed from the above range. Therefore, the gap length of the air blowing slit 17A of the air blowing portion 17 and the suction slit 18A of the suction portion 18 is formed to be longer than the length of the organic EL mask 2 in the Y direction. Thereby, there is no remaining free matter 21 which is recovered and recovered. By the above, the vapor deposition material 20 of the organic EL mask 2 is pulverized by the laser, and the free product 21 is scattered upward, and the free product 21 is transported by the air current 30 to be removed. Clean by completely non-contact. As a result, the organic EL mask 2 is not damaged and the cleaning effect is obtained. Further, the airflow 30 is brought into a laminar flow at a position separated from the organic EL mask 2, and the free-generating material 21 does not return to the organic EL mask 2' and can be recovered by the suction portion 18 without being attached. Therefore, the organic EL mask 2 can be reliably cleaned without being damaged, and the bonding mechanism of the film can be used without simplification of the mechanism and the size of the device can be reduced. The organic EL mask cleaning device 1 can exhibit an extremely high cleaning effect, and the organic EL mask 2 can be almost completely cleaned with a cleanliness of 99% or more. In the above-described embodiment, the airflow 30 in the laminar flow state is used as the means for removing the free-generating material 21 scattered from the organic EL mask 2, but the airflow 30 may not be used. For example, the attraction of the organic EL is separated by the mask 2, and the scattered free product 21 may be attracted to the orthogonal direction by the laser scanning. However, in this case, the flow of the air becomes a turbulent flow state, and the free-generating material 21 may be attached to the organic EL mask 2 again. The attraction is also applied to the mask 2 for the organic EL, and the mask 2 for the organic EL is distorted or deformed. However, even if the organic EL φ mask 2 is not damaged due to the attraction force, it may be a certain degree of thickness, and the removal means may be attractive from the direction in which the organic EL mask 2 is separated. Activator. In addition, in the above-described embodiment, the organic EL mask 2 is irradiated with a laser to clean the surface of the organic EL mask 2 (the area is cleaned). The situation] 'Bei 0 is limited to this area to scan the laser. At this time, the moving range of the moving portion 14 and one of the ranges of the reflection angles of the current mirror 16 or -22-201021928 are reduced to a part. Further, in the case where the area is cleaned, the range of the air flow 30 is also an area which can cover the object to be cleaned, and it is not necessary to form the air flow 30 in the entire area covering the mask 2 for the organic EL. In the above-described embodiment, the organic EL mask 2 is moved in the X direction by the moving portion 14, and the current mirror 16 scans the laser in the Y direction to perform area cleaning. The moving portion 14 and the current mirror 16 can be automatically controlled to automatically clean the mask 2 for the organic EL by this method. In addition, it can be cleaned automatically even by other methods. For example, in a state where the organic EL mask 2 is fixed, the current mirror 16 is vibrated in two directions, and the laser is scanned in two directions of the X direction and the Y direction. However, in the case of the laser scanning by the current mirror 16, the laser beam is incident on the organic EL mask 2 at a large angle in the end portion regardless of the center of the organic EL mask 2. At this time, there are some differences in the degree of cleanliness at the center and the end of the mask 2 for organic EL. In addition, the organic EL φ mask 2 is a large metal plate, and laser scanning in the Υ direction is also required. A certain amount of time. Therefore, the organic EL mask 2 and the laser light source 15 are relatively moved to perform area cleaning without laser scanning. For example, the current mirror 16 is used as a fixed mirror to move the moving portion 14 in two directions of the X direction and the Υ direction. Though the irradiation position of the laser beam is not changed, the organic EL mask 2 is displaced in two directions by the movement of the moving portion 14, so that the laser beam reflected by the mirror and the organic EL mask 2 are opposed to each other. mobile. The laser beam reflected by the mirror is incident on the organic EL mask 2 in any direction in the orthogonal direction. Therefore, '-23-201021928 does not cause a problem of the difference in the degree of cleanliness caused by the difference in the angle of incidence. In this case, the laser means is constructed by the laser light source 15 and the mirror, but the mirror is not used, and the oscillation direction of the laser light source 15 is made into the mask 2 for the organic EL. In the orthogonal direction, the laser means is constituted by the laser light source 15. Further, in this case, the relative moving means is constituted by the moving unit 14. In the case where the area is cleaned by the relative movement, the organic EL mask 2 is moved by the movement unit 14, and compared with the laser scanning which can change the irradiation position at a high speed. The cleaning speed becomes slow. Therefore, in the case of washing by the relatively moving area, it is preferable that the spot of the laser is used as large as possible. Further, in the cleaning by the relatively moving region, the mounting table 12 on which the organic EL mask 2 is mounted is fixed (that is, the moving portion 14 is not provided), and the mirror can be moved in two directions. . This also allows for regional cleaning. Further, the mirror and the laser light source 15 are integrally formed as a unit, and the unit is moved in two directions. Next, a modification 1 will be described with reference to Fig. 6 . In the first modification, the organic EL mask 2 is divided into a plurality of regions to be cleaned. In the sixth diagram, the laser light source 15 is disposed at two places (the first laser light source 15a and the second laser light source 15b), and the current mirror 16 is also disposed at two places (the first current mirror 16a, The second current mirror 16b). The organic EL mask 2 is divided into two regions (which are divided into the first region 2a and the second region 2b), and the first region 2a is oscillated from the first laser light source 15a - 24-21213 The laser beam is cleaned by being scanned by the first current mirror 16a, and the laser beam oscillated from the second laser light source 15b in the first region 2b is scanned by the second mirror 16b to be cleaned. In the first region 2a and the second region: the vapor deposition material 20 is adhered to the same, and the first laser light source 15a and the laser light source 15b both oscillate the laser beam of the same wavelength. As shown in Fig. 6, the organic EL mask 2 is divided into two regions. • The laser beam of the first laser light source 15a and the second laser light source 15b φ share the individual regions for cleaning. It is possible to shorten (about half) the cleaning time by cleaning two areas and each area becomes half of the organic EL mask 2. Thereby, the production efficiency of the organic EL display can be greatly improved. By increasing the number of the laser light sources 15 and the number of mirrors 16, the cleaning time can be further shortened. Next, a modification 2 will be described using FIG. In the first modification, the organic EL mask 2 is divided into two regions in the X direction. However, in the second example, the mask 2 is divided into two regions in the Y direction. In this case -φ the first laser light source 15a and the second laser light source 15b are parallel in the x direction. Further, the first current mirror 16a and the second current mirror 16b are arranged in the Y direction. The laser oscillated by the first laser light source 15a performs the first 2a. The scan is performed by the laser oscillated by the second laser light source 15b to scan the area 2b. As described above, the scan width is as good as possible by the viewpoint of the cleanness of the laser scan, the clarity or the scanning speed, and the like. In the second modification, it is divided into two regions in the Y direction. The cat width is half as compared with the example in the first figure. Therefore, the incident angle at the end of the gamma direction of the laser beam region can be made small, and the second zone current is 2b, the second domain, the laser field, and the current is greatly increased, and the arrangement is shifted to the region. 2 From the narrower, sweep into each can be -25-201021928 to reduce the difference in cleanliness. In addition, the scanning time can be greatly reduced. Therefore, it is possible to perform high-speed and high-cleanness cleaning. Next, a modification 3 will be described using FIG. In the third modification, as shown in Fig. 8, the laser oscillated from one laser light source 15 is divided by 稜鏡19 using 稜鏡19. The prism 19 reflects a portion of the incident light to transmit a portion of the beam splitter, and the functional film that performs the function is an optical element formed at an angle of incidence of 45 degrees. In the case where the crucible 19 is used, the scanning of the laser is not possible, and the moving portion 14 is moved in the X direction and the Y direction to perform the area cleaning. In the modification 3, the organic EL mask 2 is divided into two regions, and two lasers which are branched by the 稜鏡19 are used for cleaning, and the cleaning time can be shortened to about half. As described above, in the cleaning speed by the relative movement of the moving portion 14, the cleaning speed is lower than that by the laser scanning, but the organic EL mask 2 can be shot in the orthogonal direction. Into the laser, in terms of cleanliness, it is more advantageous. Therefore, by providing a plurality of lasers orthogonal to the ❹ organic EL mask 2 by a plurality of 稜鏡 19', cleaning with a high degree of cleaning can be performed for a short period of time. At this time, the diameter of the spot of the laser light from the laser light source 15 is preferably larger. Further, even if a plurality of laser light sources 15' are disposed without using the prisms 19', a plurality of lasers may be irradiated in a direction orthogonal to the mask 2 for the organic EL. Next, a modification 4 will be described. This modification 4 is an example in which an ascending air current is formed from the back side of the organic EL mask 2. As described above, the organic EL is irradiated with the mask 2 to scatter the free product 2 1 by the air stream -26-201021928 30 to almost completely remove the scattered free product 21. However, the free product 'Bio 21 is a powder or gas with a very small specific gravity, and although it can exhibit a removal rate of almost 100%, a very small amount of free product 21 is not removed by the gas stream 30 and may fall, and it is impossible to fully perform. 100% removal rate 〇' In particular, the mask 2 for organic EL is a gold plate that requires extreme care. For example, when irradiating an excessively high-intensity laser, a large impact acts on the organic φ EL mask. 2, and there is a flaw in causing damage. Therefore, the oscillation intensity of the laser light source 15 cannot be set too high, and it is impossible to give too much energy to the organic EL mask 2, and it is impossible to fly to the position of the air current 30. Namely, the set intensity of the laser light source 15 is adjusted to be the minimum necessary intensity to pulverize the vapor deposition material 20 to be scattered to the position of the air current 30. Therefore, although the scattered free product 21 almost reaches the position of the air stream 30, there is a case where a very small portion cannot reach the air stream 30 and falls. In particular, as shown in Fig. 4(b), the edge portion 4E is formed in a push-out shape. The relationship of φ forms a slope, and the free product 21 which is pulverized by the vapor deposition material 20 adhering to the edge portion 4 tends to be unable to reach the position of the gas stream 30. The free product 21 of the airflow 30 is not able to reach the organic EL mask 2, and is again attached to the organic EL mask 2. At this time, not only the surface of the mask 2 for organic EL (the surface facing the vapor deposition source in the steamer), but also the free product 21 adheres to the back surface (the opposite surface of the surface). As shown in FIG. 3, a plurality of openings 4 are formed in the organic EL mask 2, and the aperture of the opening 4 is much larger than the size of the free product 21 -27-201021928 'The free product 21 is from the opening 4 fell. In addition, the free product 2 of the falling opening portion 4 is caught in the back surface of the organic EL mask 2, and is again adhered to the back surface of the organic EL mask 2. The back surface of the organic EL mask 2 is attached to the surface of the glass substrate during vapor deposition, and when the free product 21 is attached to the back surface, the free product 21 adhering to the back surface is transferred during vapor deposition of a new glass substrate. It is printed on a glass substrate to stain the glass substrate. Therefore, the ascending airflow forming device 40 shown in Fig. 9 and Fig. 1 is provided. As shown in Figs. 9 and 10, the updraft forming device includes a frame 41 and an air supply unit 42, and a plurality of air ejection holes 43 and a chuck portion 44 are formed in abbreviated manner. Further, the air ejection hole 43 is indicated by a broken line. The frame 4 1 is a casing which forms a space in which the inside is locked. The air supply portion 42 is formed on the side surface. Further, a plurality of air ejection holes 43 are formed on the upper surface. The air supply unit 42 supplies the supply unit for the air to the frame 41, whereby the air supplied from the air supply unit 42 flows into the inside of the frame 41, and is ejected upward from a plurality of air ejection holes 43 formed in the upper surface. Each of the air ejection holes 43 is evenly and dispersedly disposed on the upper surface of the frame 41, and an upward rising air current is formed on the upper surface of the frame 41. The chuck portion 44 is a member that holds the mask 2 for the organic EL, and is fixedly disposed on the upper surface of the frame 41. The organic EL mask 2 is held by the chuck portion 44 so that the surface of the vapor deposition surface (the surface facing the vapor deposition source in the vapor deposition device, that is, the surface on which the vapor deposition material 20 adheres) faces upward. Further, the chuck portion 44 is formed in an L shape, and a slight space is provided between the organic EL mask 2 and the upper surface of the frame 41. Further, as long as it is possible to maintain a slight space between the organic EL mask 2 and the upper surface of the frame 4 1 , any configuration -28-201021928 can be employed. By the above-described updraft forming device 40, the organic EL mask 2 is often formed with an ascending airflow between laser cleaning using a laser. Therefore, air is supplied to the frame 4 1 from the air supply unit 42, and an ascending air current is often formed on the entire upper surface of the frame 41. The UF of Fig. 11 indicates the ascending air current formed in the opening portion 4 of the mask 2 for organic EL. In the region immediately below the mask 2 for the organic EL, the ascending airflow UF is formed by the rising airflow φ forming device 40, and the upward flow is formed in the opening 4 of the organic EL mask 2 from the rear surface 2R toward the surface 2S. UF. As described above, when the laser cleaning is performed, even if a part of the free product that has not reached the airflow 30 falls and falls toward the opening portion 4, the free flow of the drop is generated by the ascending air current UF formed in the opening portion 4. In the relationship that the object is pushed back upward, the free product is not caught in the back surface 2R of the mask 2 for organic EL. Therefore, the free product does not adhere to the back surface 2R again. The φ updraft UF is basically formed so as not to reattach the free product to the back surface 2R, and also functions to assist the rise of the flying matter scattered during the laser washing. The vapor deposition material 20 adhering to the mask 2 for organic EL is pulverized by the laser, and the free product is scattered upward. By forming the ascending air current UF, the flow of the upward flow UF is caused, and the free product is more likely to rise upward. That is, not only by the scattering of the laser, but also by the synergistic effect of the scattering of the laser and the updraft UF, the free product rises more. As described above, in order to avoid damage caused by the excessive impact on the cover 2 of the organic EL for -29-201021928, the laser intensity oscillated by the laser light source 15 cannot be set too high. Therefore, in order to disperse the free-generating material, a sufficient impact cannot be given, and in the case where the free-generating material is scattered only by the energy of the impact, it is impossible to fly to a position that is too high. However, an ascending airflow UF is formed from the underside of the organic EL mask 2, and the ascending airflow UF assists to raise the free product upward. Therefore, even if the oscillation intensity of the laser light source 15 is not set high, the free-generating material can be sufficiently raised to the position of the air current 30 by the assistance of the upward airflow UF. The updraft forming device 40 forms the ascending airflow UF in a very low air volume. The freely generated product is a powder or a gas having a very low specific gravity, and even if it is set to a very low air volume, the free product can be raised high by the upward flow UF. On the other hand, the frame 41 has a small interval and is separated from the organic EL mask 2, and the back surface 2R of the organic EL mask 2 is in a state of directly receiving the updraft UF. The organic EL mask 2 is an extremely thin and large metal plate. If the air volume of the updraft UF is set too high, the organic EL mask 2 is distorted or deformed, and the organic EL mask 2 is caused. The flaw of injury. From this point of view, it is preferable that the updraft UF is set to a low air volume. The updraft UF is set to at least the amount of air that the free product falling toward the opening 4 of the organic EL mask 2 is pushed back from the opening 4. Further, when the updraft UF is functioned to assist the rise of the free product, a larger amount of air is set. The air volume at this time is changed according to the oscillation intensity of the laser light of the laser light source 15. When the oscillation intensity of the laser is large, the air volume of the upward airflow UF is set smaller by -30-201021928, and the oscillation intensity is small. In the case, the updraft will be 'larger'. However, it is necessary to suppress the updraft UF from being an amount of air that does not cause damage. Therefore, when laser cleaning is performed, 40 liters of air from the back of the organic EL mask 2 are often used, and the falling free products are not re-yang, and are washed by the rising air in the laser. At this time, φ often assists in the rise of the free product to cause free production. Thereby, the organic EL mask 2 can be reliably removed by the air current 30, and the mask 2 can be used for an extremely high EL. Next, the laser cleaning by the mask cleaning device for the modification EL will be described with reference to Fig. 12, and if the updraft UF is formed, the cleaning can be made so that there is a very small amount of free product attached to the organic The EL uses a mask 2. In addition, it is narrow. The opening portion 4 is formed with the ascending air current U F and adheres to the surface 2S even if it does not adhere to the back surface 2R. In the case of the net device 50, it is considered that the surface of the mask 2 for the EL is provided by the EL 2 when a small amount of free product is adhered by using the organic EL. The lining is placed at the rear side (downstream side) of the cover cleaning device at the position where the organic EL mask 2 is cleaned by the organic EL mask. The air volume of the UF is set so that the mask 2 for the organic EL is formed by the rising airflow forming device I to the surface 2S (• is formed on the back surface 2R. The other is formed, and the rising airflow is scattered upward and the free product is scattered and scattered. To clean the organic 5. It is almost completely cleaned by the use of organic. However, the 21 is not removed and the "electro-EL mask 2 is attached to the object, and the plasma washing mask of Fig. 12 When the cleaning device is clean, the organic cleaning device is cleaned again, and the cleansing device of the plasma cleaning device is finished, that is, the organic EL masking-31 - 201021928 plasma cleaning device 50 includes: the cavity 51 and the upper electrode 52 and the lower electrode The configuration of the same is not the same as the configuration in which the mask cleaning device for the organic EL is provided with the same reference numeral. The cavity 51 is provided with the upper electrode 52 on the upper portion thereof, and the air is ejected from the susceptor. In the plasma cleaning device 50, in order to plasma-clean the organic EL mask 2, a plasma reactive gas (for example, argon or the like) is used by any gas supply means (not shown). Inert gas) supply to Between the portion electrode 52 and the lower electrode 53 (directly below the upper electrode 52 _ in Fig. 12). Then, by applying a high-frequency voltage to the lower electrode 53, the plasma reactive gas is plasma-generated to generate a plasma 34. The plasma 34 is irradiated onto the mask 2 of the organic EL mask 2, and the free product 21 on the surface of the mask 2 for organic EL is removed and washed. A small amount of free product adhering to the mask 2 for organic EL is attached. 21' is gasified by the almost simultaneous combustion (ashing) of the plasma 34, and a part of the combustion gas is released from the organic EL mask 2. The free combustion gas falls toward the organic EL mask 2, and there is a portion from the opening. 4, the back surface 2R of the organic EL mask 2 is wound up. Therefore, the updraft forming device 40 is provided in the lower portion of the organic EL mask 2, and the rising from the back surface 2R of the organic EL mask 2 toward the surface 2S is formed. The airflow UF is thereby pushed back by the updraft UF to push the combustion gas falling into the opening 4 without causing the combustion gas to be drawn into the back surface 2R. The combustion gas is raised by the ascending airflow UF, and is removed by the airflow 30 being transported. Therefore, the combustion gas does not adhere to the table of the organic EL mask 2 Face 2S, almost complete cleanliness can be obtained. -32- 201021928 By combining the mask cleaning device for organic EL and the plasma device 50 to make a mask cleaning device for organic EL, it can be used for higher cleaning. Further, although the plasma cleaning device 50 and the organic mask cleaning device are provided with the ascending airflow forming device 40, the ascending airflow forming device 40 may be provided in the "two devices". It may be provided in two devices or not in any device. φ In the laser cleaning, the scattered free product 21 is removed by the air flow 30, and in the plasma cleaning, the combustion gas is passed through the air flow. 30 was removed. Therefore, even if the ascending airflow UF is not formed, the cleaning effect can be obtained. However, since each of the two devices is provided with the ascending airflow forming device 40, it is possible to prevent the entrapment of the back surface 2R of the organic EL mask 2 to be higher. Washing effect. Further, in the example of Fig. 12, the updraft forming device 40 is configured to form the ascending airflow UF by the airflow ejected from the plurality of air ejection holes 43?? arranged on the upper surface of the frame 41, but is not limited thereto. Also - by other means. For example, when the lower portion of the back surface side of the organic EL mask is in a positive pressure state, the free product falling on the surface 2S side in the negative pressure state is not caught on the back side of the organic EL mask 2. [Simple description of the drawing] The younger brother 1 is a perspective view of the schematic configuration of the unclean device. Fig. 2 is a cross-sectional view showing a schematic configuration of a cleaning device. The net EL says that any move
係 所 可 2R 2R -33- 201021928 第3圖係有機EL用遮罩的平面圖。 第4圖係有機EL用遮罩的剖面圖及放大圖。 第5圖係說明氣流捕捉灰塵的狀態圖。 第6圖係表示變形例1之潔淨裝置之槪略構成的斜視 圖。 第7圖係表示變形例2之潔淨裝置之槪略構成的斜視 圖。 第8圖係表示變形例3之潔淨裝置之槪略構成的斜視 ⑩ 圖。 第9圖係表示變形例4之潔淨裝置之槪略構成的剖面 圖。 第1 0圖係上升氣流形成裝置的斜視圖。 第11圖係說明於有機EL用遮罩形成上升氣流的狀 態圖。 第12圖係表示變形例5之電漿洗淨裝置之槪略構成 的剖面圖。 π φ 【主要元件符號說明】 1 :潔淨裝置 2 :有機EL用遮罩 1 1 :基座 1 2 :搭載工作台 13 :夾頭部 14 :移動部 -34- 201021928 1 5 :雷射光源 1 6 :電流鏡 1 7 :送風部 18 :吸引部 20 :蒸鍍物質 2 1 :游離產生物 3 0 :氣流 φ 40 :上升氣流形成裝置2R 2R -33- 201021928 Fig. 3 is a plan view of a mask for organic EL. Fig. 4 is a cross-sectional view and an enlarged view of a mask for an organic EL. Figure 5 is a diagram showing the state of the airflow capturing dust. Fig. 6 is a perspective view showing a schematic configuration of a cleaning device of Modification 1. Fig. 7 is a perspective view showing a schematic configuration of a cleaning device of Modification 2. Fig. 8 is a perspective view showing a schematic configuration of a cleaning device of Modification 3. Fig. 9 is a cross-sectional view showing a schematic configuration of a cleaning device of Modification 4. Figure 10 is a perspective view of the ascending airflow forming device. Fig. 11 is a view showing a state in which an ascending air current is formed in a mask for an organic EL. Fig. 12 is a cross-sectional view showing the schematic configuration of a plasma cleaning apparatus of Modification 5. π φ [Description of main component symbols] 1 : Clean device 2 : Mask for organic EL 1 1 : Base 1 2 : Mounting table 13 : Clamp head 14 : Moving part - 34 - 201021928 1 5 : Laser light source 1 6 : Current mirror 1 7 : Air blowing portion 18 : suction portion 20 : vapor deposition material 2 1 : free product 3 0 : air flow φ 40 : ascending air flow forming device
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