TW201012891A - Dicing/die bond film - Google Patents

Dicing/die bond film Download PDF

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Publication number
TW201012891A
TW201012891A TW098126111A TW98126111A TW201012891A TW 201012891 A TW201012891 A TW 201012891A TW 098126111 A TW098126111 A TW 098126111A TW 98126111 A TW98126111 A TW 98126111A TW 201012891 A TW201012891 A TW 201012891A
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TW
Taiwan
Prior art keywords
acrylate
wafer
film
mol
wafer bonding
Prior art date
Application number
TW098126111A
Other languages
English (en)
Inventor
Katsuhiko Kamiya
Takeshi Matsumura
Shuuhei Murata
Hironao Ootake
Original Assignee
Nitto Denko Corp
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Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of TW201012891A publication Critical patent/TW201012891A/zh

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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
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    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/08—Homopolymers or copolymers of acrylic acid esters
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Description

201012891 六、發明說明： 【發明所屬之技術領域】 本發明涉及將用於固著晶片狀工件（半導體晶 與電極部件__在_雌 =2^於工件切晶片接^膜 而路圖案的半導體晶片（工件)根據需要通過背 郎厚度後，切割為半導趙晶片(晶片狀工件)(切 =5。Γ步驟t，—般是為了除去切斷層而在適度 =液塵（通常是約2kg/em2)下清辭導體以。然後， 利劑將所述半導體晶片固著到引線框等被黏物上 女’驟後’移至接合步驟。所述安 =塗布在⑽框或半導體晶片上。但是，該方法中谬: 劑層的均勻化是困難的，另外踢黏劑的塗布需要特殊裝置 ，長時間。因此’提出了在切割步称中保持半導體晶片膠 黏的同時在安裝步驟中也提供必要的晶片固著用膠黏劑層 的切割/晶片接合薄膜（例如，參照專利文獻^。 專利文獻1中記載的切割/晶片接合薄膜，是在支撐基 材上設置能夠剝離的膠黏劑層的結構。即，在膠黏劑層的 支樓下切割半導體晶片’然後拉伸支撐基材將半導體晶片 與膠黏劑層-起剝離’將其分別回收，通過該膠黏劑層固 著到引線框等被黏物上。 該種切割/晶片接合薄膜的膠黏劑層，為了不產生不能 切割或尺寸錯誤，希望具有對半導體晶片的良好保持力以 201012891 ======= 切割半導二 因此’為了解決這樣的問題，提 如，參照專散獻2)。料讀2巾公=7方$例 在支擇基材和勝黏劑層之間隔著可紫外 的拾取變得容易而通過兩者間的剝離使半導邀晶片 :士：::二 2—^ 片接合機不能容易:拾:半積大’因此-般的晶 ^利文獻1 .日本特開昭60-57642號公報 專利文獻2 :日本特開平如嶋號公報 【發明内容】 基材述問題而進行，其目的在於提供具有在 #片接人層的切割薄膜和在該黏合劑層上設置的 晶片接合薄膜的切割/晶片接合薄膜，該切割/晶片接合薄 201012891 ———· * 膜即使在半導體晶片為薄型的情況下’切割該薄型工件時 的保持力和將通過切割得到的半導體晶片與該 膜一體地剝離時的剝離性之間的平衡特性也優良。" 本發明人為了解決上述現有問題，對切割/晶片接合薄 膜進行了研究。結果發現，切割薄膜中所含的多官能性單 體成分物質擴散至晶片接合薄膜中，由此切割薄膜與晶片 接合薄膜的邊介面消失，從而拾取性下降，至此完成了本 發明。 即，本發明的切割/晶片接合薄膜，為了解決上述問 題，其具有在基材上具有黏合劑層的切割薄膜和在該黏合 劑層上設置的晶片接合薄膜，其特徵在於，所述黏合劑層 由丙烯酸類聚合物形成’所述丙烯酸類聚合物由 CHfCHCOOR1 (式中’ Ri為碳原子數6〜1〇的垸基）表示 的丙稀酸酯a、cH2=chcoor2 (式中，r2為碳原子數η 以上的燒基）表示的丙稀酸醋Β、含經基單體、和分子内 具有自由基反應性碳碳雙鍵的異氰酸酯化合物構成，所述 丙烯酸酯Α和所述丙烯酸酯Β的配合比例是：相對於丙烯 酸酯A 60〜90莫耳％ ’丙稀酸酯B為40〜10莫耳％，戶斤述 含羥基單體的配合比例是：相對於所述丙烯酸酯A和丙烯 酸酯B的總量1〇〇莫耳％在1〇〜3〇莫耳％的範圍内，所述 異氰酸酯化合物的配合比例是：相對於所述含經基單艏 100莫耳％在70〜90莫耳％的範圍内，所述晶片接合薄膜由 環氧樹脂形成。 在形成本發明的黏合劑層的丙烯酸類聚合物中包含以 201012891 CHfCHCOOR1 (式中，R1為碳原子數6〜10的烷基）表示 的丙烯酸酯A和以CHfCHCOOR2 (式中，R2為碳原子數 11以上的烷基）表示的丙烯酸酯B，丙烯酸酯B的配合比 例為以相對於丙烯酸A 60〜90莫耳％為40〜10莫耳％。通 - 過使丙烯酸酯A的配合比例為％莫耳％以下並且使丙烯 酸酯B的配合比例為1〇莫耳％以上，可以提高黏合劑層在 紫外線固化後對晶片接合薄膜的剝離性，可以使拾取半導 體晶片時的拾取性良好。另一方面，通過使丙烯酸酯A的 _ 配合比例為6 0莫耳％以上並且使丙烯酸酯B的配合比例為 40莫耳％以下，可以使紫外線固化前的切割薄膜與晶片接 合薄膜的膠黏性良好，防止剝離。另外，通過使含經基單 體的配合比例相對於丙烯酸酯A與丙烯酸酯B的總量1〇〇 莫耳％為10莫耳％以上，可以抑制紫外線固化後的交聯不 足、、、《果，例如對於切割時黏貼在黏合劑層上的切割環， 可以防止踢糊殘留的產生。另一方面，通過使所述配合比 例為3_0莫耳％以下’可以防止由紫外_射㈣的交聯過 魯 度進行從而剝離困難並且拾取性下降。 糾’本發财，不使好官紐單體，而使用分子 内具有自由基反應性碳碳雙鍵的異氰酸醋化合物，因此， =會出現該多官紐單體物質擴散至晶片接合薄膜中。結 防止切割薄膜與晶片接合薄膜的邊介面消失，可以 現更好的拾取性。 匕所述含㈣單體優選為選自由（甲基）丙烯酸_2_經基 乙酉曰（曱基）丙烯酸-2-經基丙酯、（曱基）丙烯酸_4· 201012891 羥基丁酯、（甲基）丙烯酸-6-羥基己酯、（曱基）丙烯酸 -8-羥基辛酯、（甲基）丙烯酸_1〇_羥基癸酯、（甲基）丙 烯酸-12-羥基十二烷酯和（曱基）丙烯酸（4_羥甲基環己 基）甲醋組成的群組中的至少任意一種。 另外，所述具有自由基反應性碳碳雙鍵的異氰酸酯化 合物，優選為選自2·甲基丙烯醯氧乙基異氰酸酯或者孓 稀醯氧乙基異氰酸醋的至少任意一種。 另外，所述丙烯酸類聚合物的重均分子量優選在％ 萬至100萬的範圍内。通過使重均分子量為35萬以上， 以防止低分子量聚合物的比例減少，由此，可以防止例二 切割時從在黏合劑層上黏貼的切割環上產生剝離 =於J以防止紫外_射後的交聯从，因此在從勸 環時’也可以防止產生膠糊殘留。另-方面， 通過使重均为子量為100萬以下，以古 =劑層時的作業性。黏合劑層的形成，：如“通： 烯酸類聚合物形她合劑組合物的 子量行，如果丙烯酸類聚合物的重均分 該丙__1_合敝合物溶_較過大，因此 的聚合以及塗布時的作業性降低。 彈性模量優選在0.4〜3.5MPa的範圍 使紫外繞昭私〜優選在7〜1〇_a的範圍内。通過 201012891 ----- £-- 可以抑制碎屑的產生。另外，剝離切割環時，可以防止產 生谬糊殘留。另一方面，通過使拉伸彈性模量（Μ。。）為 3.5MPa以下，可以防止切割時產生晶片飛散。另外，通過 使紫外線照射後的拉伸彈性模量（23t )為7MPa以上， 可以提局拾取性。 構成所述黏合劑層的所述丙烯酸類聚合物優選不包含 丙烤酸作為單職分。由此，可以防止黏合繼與晶片接 合薄膜的反應或相互作用，可崎—步提高拾取性。 為讓本發明之上述特徵和優點能更明顯易懂，下文特 舉實施例，並配合所附圖式作詳細說明如下。 【實施方式】 (切割/晶片接合薄膜） 關於本發明的實施方式，參照圖1和圖2進行說明。 圖1是表示本實施方式中的_/晶片接合薄膜的剖面元 意圖。圖2是表示本實施方式中另—個切割/晶片接合薄港 的剖面示意圖。其中’不需說明的部分省略，並且為了溶 易說明而具有擴大或者縮小等進行圖示的部分。 ^圖1所示’切·B片接合薄膜1G為具有在基材] 上設，黏合劑層2的_薄膜和在該黏合劑層2上具有羞 ^接曰薄膜3的結構。另外，本發明如圖2所示，也可„ 是僅半導體晶片黏貼部分上形成晶片接合薄膜3,的構成。 八= 基材1具有紫外線透過性，並且作為切割/晶片箱 _度母體。例如可以列舉··低密度聚乙婦 線型聚乙婦、中密度聚㈣、高密度聚⑽、超低密= 201012891 乙烯、無規共聚聚丙稀、散段共聚聚丙烯、均聚聚丙稀、 聚丁烯、聚甲基戊烯等聚烯烴、乙烯-醋酸乙烯酯共聚物、 離聚物樹脂、乙烯-(甲基）丙烯酸共聚物、乙烯甲基） 丙烯酸酯（無規、交替）共聚物、乙烯-丁烯共聚物、乙烯 -己烯共聚物、聚氨酯、聚對苯二甲酸乙二醇酯、聚萘二曱 酸乙二醇酯等聚酯、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚 醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚笨硫 醚、芳族聚醯胺（紙）、玻璃、玻璃布、氟樹脂、聚氣^ 稀、聚偏氯乙烯、纖維素類樹脂、有機矽樹脂、金屬（箔）、 紙等。 另外，作為基材1的材料，可以列舉所述樹脂的 物等聚合物。所述塑膠薄膜可以不拉伸使用，根據需要 可以進行單轴或雙軸拉伸處理後使用。利用經拉伸處理 而賦予了熱㈣性的細旨片，切雜通過使其基材i熱 縮，能夠降低黏合劑層2與晶片接合薄膜3、3,的' 積，從而容易回收半導體晶片。 膠黏面 為了提咼與鄰接層的密合性和保持性等，基材〖 面可以進行常規表面處理，例如鉻酸處理、臭氧暴露、’， 焰暴露、高壓電壓暴露、離子化放射線處理等化學理 處理、利用底塗劑（例如，後述的黏合物質）的塗布處理 所述基材1，可以適當選擇使用同種或異種 ° 據需要也可以將多種混合制。另外，為了對基^ ^ 防靜電性能，可以在所述基材i上設置包含金屬、合金了 匕們的氧化物等的厚度約30〜約500A的導電物質的蒸贫 201012891 ---- x— , ’ 層。基材1可以是單層也可以是2種以上的多層。 基材1的厚度沒有特別限制，可以適當設定，一般為 約 5〜200μπι 〇 所述黏合劑層2通過紫外線固化型黏合劑形成。紫外 ，固化型黏合劑可以通過紫外線照射使交聯度增大，從而 容易使其黏合力下降。通過僅對圖2所示的黏合劑層2的 與半導體晶片黏貼部分對應的部分2a進行紫外線照射，可 以設置其與其它部分2b的黏合力差。 鲁另外，通過使紫外線固化型的黏合劑層2與圖2所示 的晶片接合薄膜3,的形狀一致地進行固化，可以容易地形 成黏s力顯著下降的所述部分2a。由於在固化並且黏合力 下降的所述部分2a上黏貼晶片接合薄膜3,，因此黏合劑 ^ 2的所述部分2&與晶片接合薄膜3’的介面具有拾取時 容易剝離的性質。另一方面，未照射紫外線的部分具有充 分的黏合力，形成所述部分2b。 如前所述，圖1所示的切割/晶片接合薄膜1〇的黏合 ❹，層2中，由未固化的紫外線固化型黏合劑形成的所述; • 分2b與晶片接合薄膜3黏合，能夠確保切割時的保持力。 這樣，紫外線固化型黏合劑能夠以良好的膠黏、剝離平衡 來支撐用於將半導體晶片固著到襯底等被黏物上的晶片接 合薄膜3。圖2所示的切割/晶片接合薄膜u的黏合劑層2 中，所述部分2b可以固定切割環。切割環例如可以使用由 不錢鋼等金屬製成的切割環或樹脂製成的切割環。 所述紫外線固化型黏合劑是使用在聚合物側鏈或主鍵 11 201012891 中或者主鏈末端具有自由基反應性碳碳雙鍵的聚合物作為 基礎聚合物的内在型紫外線固化型黏合劑。内在型紫外線 固化型黏合劑不需要含有或者大部分不含有作為低分子量 成分的低聚物成分等，因此低聚物成分等不會隨時間而在 黏合劑中移動，可以形成穩定層結構的黏合劑層。 本發明中，所述丙烯酸類聚合物由丙烯酸醋A、丙稀 酸醋B、含羥基單體和分子内具有自由基反應性碳碳雙鍵 的異氰酸酯化合物構成》 所述丙烯酸酯A由化學式CHfCHCOOR1 (式中，Ri 為碳原子數6〜10的院基、更優選碳原子數8〜9的烧基） @ 表示。另外’所述丙烯酸酯B由CHfCHCOOR2 (式中， R2為碳原子數11以上、更優選12〜26、進一步優選16〜22 的娱•基）表示。通過含有這樣的長鏈烧基單體，可以降低 黏合劑的極性，提高紫外線固化後的剝離性。 所述丙烯酸酯A與所述丙烯酸酯B的配合比例是：相 對於丙烯酸A 60〜90莫耳％丙烯酸酯B為40〜10莫耳〇/0。 如果使丙烯酸酯A的配合比例超過90莫耳％、並且丙烯 酸醋B的配合比例小於10莫耳％，則紫外線固化後的黏合 ❹ 劑層2對於晶片接合薄膜3的剝離性下降，導致拾取半導 體晶片時的拾取性下降。另一方面，如果使丙烯酸酯A的 配合比例小於60莫耳％並且丙烯酸酯B的配合比例超過 40莫耳％ ’則黏合劑層2對於晶片接合薄膜3的膠黏性下 降’有時在切割時產生晶片飛散。 所述丙烯酸酯A具體可以列舉例如：丙烯酸己酯、丙 12 201012891 稀酸庚醋、丙稀酸辛酯、丙烯酸-2-乙基己醋、丙婦酸異辛 酯:丙烯酸壬酯、丙烯酸異壬酯、丙烯酸癸酯、丙烯酸異 癸酯等烷基的碳原子數為6~10(特別是碳原子數8〜9)的 直鏈狀或支鏈狀丙烯酸烷基酯等。這些單體可以單獨使用 . 或者兩種以上組合使用。另外，所述化學式表示的單體中， 特別優選丙烯酸-2-乙基己酯、丙烯酸異辛酯、丙烯酸 酯等。 作為所述丙烯酸酯B，只要是烷基的碳原子數為u 以上的丙烯酸烷基酯則沒有特別限制，優選烷基的碳原子 $為12以上（特別優選碳原子數16以上）的丙烯酸烷基 酯。作為丙烯酸酯B中烷基的碳原子數上限，沒有特別限 制，例如可以為30以下，優選26以下（進一步優選22 =下）。作為丙烯酸酯B，具體可以列舉例如：丙烯酸十 〜烷酯、丙烯酸十三烷酯、丙烯酸十四燒酯、丙烯酸十六 烷酯、丙烯酸十八烷酯、丙烯酸二十烷酯、丙烯酸二十二 烷酯等。這些單體可以單獨使用或者兩種以上組合使用。 β 所述丙烯酸類聚合物中使用能夠與所述丙烯酸酯八和 丙烯酸酯Β共聚的含羥基單體作為必須成分。作為含羥基 單體’可以列舉例如··（甲基）丙烯酸_2_羥基乙酯、（甲 基）丙烯酸-2-羥基丙酯、（曱基）丙稀酸_4_經基丁醋、（甲 基）丙烯酸-6-經基己酯、（曱基）丙烯酸_8_經基辛酯、（甲 基）丙烯酸-10-羥基癸酯、（曱基）丙烯酸_12-羥基月桂醋、 (曱基）丙烯睃-(4-羥甲基環己基）曱酯等。所述含經基 單體可以單獨使用或者兩種以上組合使用。 13 201012891 所述含羥基單體的配合比例，相對於丙烯酸酯 A和丙 稀酸醋B的總量10〇莫耳％優選在1〇〜3〇莫耳％的範圍 内更優選在15〜25莫耳％的範圍内。配合比例如果小於 10莫耳/〇,則紫外線照射後交聯不足’切割時對於黏貼在 黏合劑層上的切割環，有時產生膠糊殘留。另—方面，如 果配合比例超過30莫耳％，則黏合劑的極性變高，與晶片 接合薄膜的相互作用變高，由此剝離困難。 所述丙烯酸類聚合物，為了改善凝聚力和耐熱性等， 巧據需要可时有與能_所述_親基g旨“的其它 單體成分賴的單it。作為這樣料誠分，可以列舉例 如·丙稀酸曱S旨、丙鱗乙g|、丙烯酸丙_、丙稀酸異丙 酯、丙烯酸丁酯、丙烯酸異丁酯、丙烯酸叔丁酯、丙烯酸 仲丁醋、丙烯酸賴等絲的碳原子數為U的丙稀酸燒 基醋；f基丙烯酸甲酉旨、曱基丙稀酸乙醋、甲基丙婦酸丙 醋、甲基丙稀酸異两醋、曱基丙稀酸丁5旨、甲基丙稀酸異 丁醋、曱基丙雜叔丁自旨、曱基丙稀酸仲丁酉旨、曱基丙稀 酸戊醋等絲的碳原子數為U的甲基丙烯酸燒基醋；丙 稀酸、甲基丙婦酸、（曱基）丙稀酸叛乙醋、（甲基）丙 婦酸竣戊S旨、衣錢、馬來酸、富馬酸、謂酸等含叛基 單髏；馬練Sf、衣康叫等酸#單體；苯乙細酸、稀 丙續酸、2_ (甲基）兩歸醯胺基_2_甲基丙確酸、（曱基） 丙烯酿胺基丙祖、（曱基）丙稀酸績㈣、（甲基）丙 稀酿氧基萘雜等含錢單體；祕鋪酸·2老基乙醋等 含磷酸基單體；丙㈣胺；丙稀腈；丙_觀醋（環己 201012891 醋等）；甲基丙烯酸環烷酯等。這些玎共聚單體成分可以 使用一種或兩種以上。這些可共聚單體的使用量優選為全 部單體成分的4〇重量％以下。但是，所述含羧基單體的情 況下’通過該羧基與晶片接合薄膜3中的環氧樹脂中的環 氧基反應，黏合劑層2與晶片接合薄膜3的邊界面消失， 有時兩者的剝離性下降。因此，含羧基單體的使用量優選 為全部單體成分的〇〜3重量％以下。另外，這些單體成分 ^ 中’構成本發明的黏合劑層2的丙烯酸類聚合物優選不含 丙稀酸作為單體成分。這是因為：有時丙烯酸物質擴散到 晶片接合薄膜3中，使黏合劑層2與晶片接合薄膜3的邊 界面消失，使軔離性下降。 在此’所述丙烯酸類聚合物，優選不含多官能性單體 作為共聚用單體成分。由此，多官能性單體不會物質擴散 至晶片接合薄膜中，可以防止由黏合劑層2與晶片接合薄 膜3的邊界面消失而導致的拾取性下降。 另外’所述丙烯酸類聚合物中，使用分子内具有自由 _ 基反應性碳碳雙鍵的異氰酸酯化合物作為必須成分。作為 所述異氰酸酯化合物，可以列舉例如：曱基丙烯醯異氰酸 酯、2-甲基丙烯醯氧乙基異氰酸酯、2_丙烯醯氧乙基異氰 酸酯、間異丙烯基_α，α-二曱基苄基異氰酸酯等。所述異氰 酸酯化合物可以單獨使用或者兩種以上組合使用。 所述具有自由基反應性碳碳雙鍵的異氰酸酯化合物的 配合比例，相對於含羥基單體100莫耳％優選在7〇〜9〇莫 耳％的範圍内，更優選在75〜85莫耳％的範圍内。配合比 15 2〇1〇12891 对如果低於7。莫耳％，财時料_射後較聯不足， ^時對於黏貼在黏合騎上的切割環，有時產生谬糊殘 方面，配合_如果超過9G莫耳％，則黏合剩的 難，拾接合薄膜的相互作用變高，由此剝離困 所述丙顧姆合射以通過將所述單體混合物聚合 溶歸合 '乳化聚合 '本體聚合、懸 式進行。從防止污染潔淨的_物等方面 鲁 酸類炉人子量物_含量小。從該觀點考慮，丙稀 Ϊ軌合物的重均分子量優選為約35萬至約_萬、更優 浚蟠萬^約8〇萬。重均分子量的測定通過GPC (凝膠 〜透色譜法）進行，是通過聚苯乙缔換算而算出的值。 射後=1為/調節紫外線照射前的黏合力或者紫外線照 ^後^合力，所述黏合劑中也可以適當使用外部交聯 ί酸綠的Μ手段’可以列舉：添加多異 5酸自曰化合物、環氧化合物、氮丙咬化合物、三聚氮胺 =所=交聯劑進行反應的方法。使用外部交聯劑 量根據與要交聯的基礎聚合物的平衡以 、作為黏口劑的使用用途來進行適當確定。 述基礎聚合物100重； 的方==聚合物中引入自由基反應性碳碳雙鍵 的方法沒有特別限制’可以採用各種方法，從分子設計方 16 201012891 面考慮，在聚合物侧鏈中引入自由基反應性碳碳雙鍵是比 較容易的。例何㈣舉孩方法：預先將具有經基的單 體與丙_姆合物絲後，使具有能夠與贿基反應的 異氰酸酯基及自由基反應性碳碳雙鍵的所述異氰酸酯化合 物在保持自由基反紐碳碳雙鍵的料_化性的狀態下 進行縮合或加成反應。 骞 鲁 所述内在型的紫外線固化型黏合劑，可以單獨使用所 述具有自由基反應性碳碳雙鍵的基礎聚合物（特別是丙稀 酸類聚合物），也可以在不損害特性的範圍内配合紫外線 固化性單體成分或低聚物成分。 作為配合的所述紫外線固化性單體成分，可以列舉例 如:氨基甲酸酯低聚物、氨基曱酸酯（曱基）丙烯酸酯、 一經曱基丙燒二（甲基）丙埽酸酯、四幾 基)_、季戍四醇三(甲基)丙稀二 四：曱基）丙埽酸醋、二季戊四醇單經基五（甲基）丙烯 酸§曰、一季戊四醇六（甲基）丙稀酸醋、1，4-丁二醇二（甲 。另外’紫外線固化性的低聚物成分可以 二舉氰基甲_類、㈣類、聚醋類、聚碳酸醋類、聚丁 二稀Τ等各種低聚物’其分子量在約1⑽至約30000的範 ^内，適當的。紫外_化性單體成分或低雜成分的配 1如1 ’可以根據所絲合_的_適當確定能夠使黏 黏合力Ύ降的量。—般而言，相對於構成黏合劑 類聚合物等基礎聚合物100重量份，例如為約5 至約500重量份、優選約4〇至約15〇重量份。 17 201012891 - - - * 所述紫外線固化型黏合劑中優選含有光聚合引發劑。 作為光聚合引發劑，可以列舉例如：‘（2_經基乙氣基） 本基（2-經基-2-丙基）酮、a-經基-α，α’-二甲基苯乙酮、 2-甲基-2-羥基苯丙酮、1·羥基環己基苯基鲖等心酮醇類化 合物；曱氧基苯乙酮、2,2-二甲氧基-2_苯基笨乙酮、2，孓 二乙氧基苯乙酮、2·甲基-1-[4-(曱硫基)苯基嗎啉代丙烷 -1_網等苯乙酮類化合物；苯偶姻***、苯偶姻異丙醚、茴 香偶姻甲醚等苯偶姻醚類化合物；苯偶醯二甲基縮酮等縮 鲷類化合物；2-萘磺醯氯等芳香族磺醯氣類化合物；丨_苯 基·1，2-丙二酮-2-(0-乙氧基羰基)肟等光活性肟類化合物； 二苯甲蜩、苯甲醢基苯甲酸、3,3，-二甲基甲氧基二苯曱 _等二苯甲酮類化合物；噻噸酮、2-氣噻噸綱、2-甲基噻 噸朗I、2,4·二甲基噻噸酮、異丙基噻噸酮、2,4_二氯嘆噸酮、 一乙基嗟領酮、2,4-二異丙基嗟嘲酮等嘆嘲酮類化合 物；樟腦醌；齒化酮；醯基氧化膦；醯基膦酸酯等。光聚 Q引發劑的配合比例，相對於構成黏合劑的丙烯酸類聚合 物等基礎聚合物100重量份例如為約〇 至約2〇重量份。 _在切割/晶片接合薄膜10的黏合劑層2中，可以對黏 合劑層2的一部分進行紫外線照射使得所述部分2 a的黏合 力<其它部分2b的黏合力。即，使用基材i的至少單面的、 與半導體晶片黏貼部分3a對應的部分以外的部分的全部 或者一部分被遮光的基材，在其上形成紫外線固化型黏合 劑層2後進行紫外線照射，使與半導艎晶片黏貼部分3a 對應的部分固化，可以形成使黏合力下降的所述部分2a。 18 201012891 印刷或蒸鍵等在支物上製作 侵選為賴射積分光量 r保持能夠防止切割:產過=== ，性的同時’在拾取時得到：飛=程 可以南效舰树__似接合_ ig。由此 紫外ϋ卜化時因氧而產生固化障礙時，優選從 紫外線固化難合_2的表面_氧（ Γ=舉例如:用隔膜被覆黏合劑層2的二 =、或者在Μ環境中進行紫外線等的紫外線騎的方法 寻0 黏合騎2的厚度沒有__，從防止晶片切 的缺陷或者雜層_定雜的兼具性等方面考慮，優選 為約1至約50μιη。優選2〜3一、更優選5〜25哗。 晶片接合薄膜3例如可以僅由穋黏劑層單層構成。另 外，也可以形成將玻璃化轉變溫度不同的熱塑性樹脂、熱 固化溫度不同的熱固性樹脂適當組合 構。另外，由於在半導體晶片的切割步驟L =結 因此晶片接合薄膜3吸濕’有時含水率達到常態以上。如 果以這樣的高含水率直接膠黏在襯底等上，則有時在後固 化階段膠黏介面處滯留水蒸汽，而產生***。因此，作為 晶片膠黏用膠黏劑，通過形成用晶片膠黏劑夾著高透濕性 的芯材的結構，在後固化階段水蒸汽透過薄膜而擴散，從 而可以避免所述問題。從這樣的觀點考慮，可以形成在晶 19 201012891 上形成膠黏劑層的多層 片接合薄膜3的芯材的單面或雙面 結構。 薄膜(例如聚酿亞胺薄膜、 醇醋薄膜、聚碳酸i薄膜等广、聚萘二甲酸乙二 纖維增強的樹月日襯底、_底或玻璃襯底等。 本發明的晶片接合薄膜3，以環 形成。環氧謝使半導體元件腐_離子 :物=:為所述環氧樹脂，只要是作為膠組 二物通常使㈣即可，沒有特別_，可以使 紛A型、雙㈣型、·巧、漠化㈣a型 2型、雙紛AF^、聯苯型、萘型、苟型、苯盼祕清 、鄰甲紛祕清漆型、三絲基甲㈣、四苯盼基乙 烧型等雙官能環氧樹脂或多官能環氧樹脂、或者乙内醯腺 型、異氰腺酸二縮水甘油酯型或者縮水甘油胺型等環氧樹 =。這些環氧樹脂可以單獨使用或者兩種以上組合使用。 這些環氧樹脂中，特別優選酚醛清漆型環氧樹脂、聯苯型 環氧樹脂、三羥苯基甲烷型環氧樹脂或四苯酚基乙烷型環 氧樹脂。這是因為：這些環氧樹脂與作為固化劑的酚樹脂 的反應性好’並且耐熱性等優良。 另外，晶片接合薄膜3根據需要可以適當組合使用其 它熱固性樹脂或熱塑性樹脂。作為所述熱固性樹脂，可以 列舉：酚樹脂、氨基樹脂、不飽和聚酯樹脂、聚氨酯樹脂、 聚矽氧烷樹脂、或者熱固性聚醯亞胺樹脂等。這些樹脂可 201012891 以單獨使用或者兩種以上組合使用。另外，作為環氧樹脂 的固化劑優選酚樹脂。 另外，所述盼樹脂作為所述環氧樹脂的固化劑起作 用，可以列舉例如：苯盼紛酿清漆樹脂、苯盼芳燒基樹脂、 甲酚酚醛清漆樹脂、叔丁基苯酚酚醛清漆樹脂、壬基苯齡 酚醛清漆樹脂等酚醛清漆型酚樹脂、甲階酚醛樹脂型紛樹 脂、聚對羥基苯乙烯等聚羥基苯乙烯等。這些酚樹脂可以 -單獨使用或者兩種以上組合使用。這些紛樹脂中特別優選 瘳 苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。這是因為可以提高 半導體裝置的連接可靠性。 所述環氧樹脂與盼樹脂的配合比例，例如以所述環氧 樹脂成分中的環氧基每1當量紛樹脂中的經基為0.5〜2.0 當量的方式進行配合是適當的。更優選為0.8〜1.2當量。 即，這是因為：兩者的配合比例如果在所述範圍以外，則 固化反應不充分，環氧樹脂固化物的特性容易變差。 作為所述熱塑性樹脂，可以列舉：天然橡膠、丁基橡 ❹ 膠、異戊二烯橡膠、氣丁橡膠、乙烯-醋酸乙烯酯共聚物、 乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹 脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍或6,6_ 尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸系樹脂、PET或 PBT等飽和聚酯樹脂、聚酿胺醯亞胺樹脂、或者含氟樹脂 等。這些熱塑性樹脂可以單獨使用或者兩種以上組合使 用。這些熱塑性樹脂中，特別優選離子性雜質少、耐熱性 高、能夠確保半導體元件的可靠性的丙烯酸系樹脂。 21 201012891 作為所述丙烯酸系樹脂，沒有特別限制，可以列舉： 以種或兩種以上具有碳原子數30以下、特別是碳原子數 4〜18的直鏈或支鏈烷基的丙烯酸酯或甲基丙婦酸醋為成 分的聚合物等。作為所述烷基，可以列舉例如：曱基、乙 基、丙基、異丙基、正丁基、叔丁基、異丁基、戊基、異 戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基'、 壬基、異壬基、癸基、異癸基、十一燒基、月桂基、十三 烷基、十四烷基、硬脂基、十八烷基或者十二烷基等。 另外，作為形成所述聚合物的其它單體，沒有特別限 制，可以列舉例如：丙稀酸、曱基丙稀酸、丙稀酸叛乙酯、 丙烯酸羧戊醋、衣康酸、馬來酸、富馬酸或丁烯酸等含羧 基單體；馬來酸酐或衣康酸酐等酸酐單體；（甲基）丙稀 酸-2-經基乙酯、（甲基）丙烯酸_2·羥基丙酯、（甲基）丙 稀酸-心經基丁酯、（曱基）丙烯酸-6-羥基己酯、（甲基） 丙婦酸-8-羥基辛酯、（曱基）丙烯酸_1〇_羥基癸酯、（甲 基）丙烯酸-12-羥基月桂酯或丙烯酸(4-羥甲基環己基)甲酯 等含經基單體；苯乙烯磺酸、烯丙基磺酸、2_ (甲基）丙 烯酿胺-2-甲基丙烷磺酸、（甲基）丙烯醯胺丙烷磺酸、（曱 基）丙烯酸磺丙酯或（甲基）丙烯醯氧基萘磺酸等含磺酸 基單體；或者丙烯醯磷酸_2_羥基乙酯等含磷酸基單體。 晶片接合薄膜3的膠黏劑層中，為了預先具有某種程 度的交聯’在製作時優選添加與聚合物的分子鏈末端的官 能團等反應的多官能性化合物作為交聯劑。由此，可以提 尚高溫下的膠黏特性、改善耐熱性。 201012891 二卜，晶片接合薄犋3的膠黏劑層中 當配合其它添加劑。作為其它添加劑，可以 些物質可以單獨使用或者兩種以上組合使用。：二: ❹ 基魏^袤氧丙氧基丙基三ψ氧環基 == 丙基甲基二乙氧基钱等。這些化合物可以單獨 :=組== 為所述離子捕獲劑，列舉例如 水π石類、虱氧化鉍等。這拖物質 以上組合使用。 &-㈣了叫獨使用或者兩種 晶片接合_3的厚歧有制 5 約綱叫、優選約5至約5〇μιη。 ^如為約5至 可以使切割/晶片接合薄膜1〇、u具有防靜 由此’可以防止其膠黏時及剝離時^鸦 =::Γ件(半導體晶，帶電而遭破壞等 方靜電此力的料’可以通過在基材i、黏合 ^片接合薄膜3中添加防靜電劑或導電物質的^法、在羞 適電荷移動ί合物或金屬膜等形成的導電層筹 半導體晶i變Ϊ的:i廷些方式’優選難以產生有可能儀 =導變f的雜質離子的方式。作為為了導電性的顧 以列ί熱Γί高金等1 配合的導電物人質（導電填料）1 片狀金屬粉、㈣； 23 201012891 但是，從能夠不漏電的觀點考慮，優選所述晶片接合薄膜 3、3’為非導電性。 所述切割/晶片接合薄膜10、U的晶片接合薄膜3、3 優選由隔膜保護（未圖示）。隔膜具有在供實際應用之前 作為保護晶片接合薄膜3、3’的保護材料的功能。另外， 隔膜還可以作為向黏合劑層2上轉印晶片接合薄膜3、3’ 時的支撐基材使用。隔膜在向切割/晶片接合薄膜的晶片接 合膜3、3’上黏貼工件時剝離。作為隔膜，可以使用聚對 苯二甲酸乙二醇醋（PET)、聚乙稀、聚丙稀、或由含氣 剝離劑、長鏈烷基丙烯酸酯類剝離劑等剝離劑進行了表面 塗布後的塑膠薄膜或紙等。 (切割/晶片接合薄膜的製造方法） 晶
以下’以切割/晶片接合薄膜1〇為例對本發明的切割 片接合薄膜的製造方法進行說明。首先，基材i可則 =以往公知的製法製成膜。作為該製财法，可以歹 舉例如.壓延製膜法、有機溶劑中的流延法、密
=敎㈣、T雜職出法、共知法、幹式層以 布方式，可以列舉：輥塗、_網= 絲合劑層2。作為璧 塗布可以娜如上進另外 剝離處理的剝離紙等上後轉印到基材1表面進行避 然後，制於形成晶片接合_3的形成材料塗布在 24 201012891 上至财厚度，並且在預定條件下進行乾燥而形成 塗布層。通過將該塗布層轉印到所述黏合劑層2上， 晶片接合薄膜3。另外，通過在所述黏合劑層2上 布形成材料後在預定條件下進行乾燥，也可以形成接 通過以上方法，可以得到本發明的切割/晶片接 (半導體裝置的製造方法） φ 兹入ί發明的切割/晶片接合薄膜Η>、11在適當剝離晶片 ϋ:圖3; 3,上任意設置的隔膜後以下述方式使用。以 行說^ 吏用切割/晶片接合薄膜11的情況為例進
中的:ί接:祕在切割7晶片接合薄膜U 驟）。本___而固定（安裝步 ^步驟在關接輥等擠壓工具擠壓的同時進行。 二’進行半導體晶片4㈣割。由此，將半導體曰曰 片4切割為預定的尺寸而小片化，形 二T從半導_4的電路 薄膜1。的、稱步為=如二採等用切二至切割/晶片接合 裝置沒有特別本步驟中使用的切割 由於半導^ Η可以使用現有公知的切割裝置。另外， 能夠抑制曰k由切割/晶片接合薄膜10膠黏固定，因此 片4的破、陷和晶片飛散’並且也能夠抑制半導體晶 、了將在_/晶#接合薄膜1g上轉ϋ定的半導體 25 201012891 限二釗ΐ ί行半導體晶片5的拾取。拾取方法沒有特別 限制’可以使用現有公知 行〜 各種方法。例如可以列舉：用 ^ ^ ^接合4膜側將各個半導體晶片5向上 ’通過拾取裝置拾取被上推的半導體晶片5的方法等。 於黏合劑層2是紫外線固化型，因此拾取在 對該黏合劑層2照射紫外線之後進行。由此，黏合劑層1
合薄臈3a的黏合力降低，使半導鱧晶片5的剝離 ^付谷易°結果’可以在不損傷半導體晶片的情況下進行 。取。紫外線照㈣的照射強度、照射時間等條件沒有特 另J限制T以根據需要適當設定。例如，紫外線照射積分 光量優選為5G〜5GGmX/em2。在所述積分光量的範圍内，本 發明的晶片接合薄膜不會因紫外線照射而過度進行交聯從 而造成剝離_，㈣良好的拾取性。另外，作為紫外線 照射時使用的光源，可以使用前述的光源。
拾取的半導體晶片5通過晶片接合薄膜3a膠黏固定在 被黏物6上（晶片接合）。被黏物6載置於加熱台（heat block) 9上。作為被黏物6 ’可以列舉：引線框、tab薄 膜、襯底或者另外製作的半導體晶片等。被黏物6例如可 以是容易變形的變形型被黏物、也可以是難以變形的非變 形型被黏物（半導體晶片等）。 作為所述襯底，可以使用現有公知的襯底。另外，作 為所述引線框’可以使用Cu引線框、42合金引線框等金 屬引線框或者由玻璃環氧、BT (雙馬來醯亞胺_三唤）、 聚醯亞胺等製成的有機槻底。但是，本發明不限於這些， 26 201012891 ==半導體元件、與半導體元件電連接後可以使 晶片時接?過加熱固化將半導體 導體晶片5通過半導^曰片她，財熱強度。另外，半 上而得到的製品可以用二片二 Φ ====導_5上的電罐 8將本料連接的絲焊，再㈣封樹脂 實施例 下u地例示說明本發明的優選實施例。但是， 材料或配合量等如果沒有特別限定的 明：e ίΓ!的範圍限定於此’只不過是舉例說 準。 ^ ，“份”如果沒有特別說明是重量基 (實施例1) <切割薄膜的製作> 應有！Tv f氣導入管、溫度計和挽摔裝置的反 ‘^A，，、御於A &丙稀酸_2_乙基已酉盲（以下稱為 2EHA )、39.0&丙_硬脂醋（以下稱”）、93 」 Ψ本’錢氣流中在61。(：下進行6小時聚 σ處理，得到重均分子量S8萬的丙烯酸類聚合物a。重均 27 201012891 分子量如下所述。2EHA與SA與HEA的莫耳比為70莫 耳比30莫耳比20莫耳。 在該丙烯酸類聚合物A中加入10.0份（相對於HEA 為80莫耳％) 2-甲基丙烯醯氡乙基異氰酸酯（以下稱為 “ΜΟΓ) ’在空氣氣流中在50°C下進行48小時加成反應 處理，得到丙烯酸類聚合物A’。
然後，在100份丙烯酸类聚合物A，中加入8份多異氰 酸酯化合物（商品名“ColonateL”，曰本聚氨酯株式會社製 造）和5份光聚合引發劑（商品名“irgacure 651”，汽巴特 殊化学品公司製），製作黏合劑溶液。 將前述製備的黏合劑溶液塗布於PET剝離襯裡的經聚 矽氧烷（silicone)處理的面上，在12〇tM熱交聯2分鐘， 形成厚度ΙΟμηι的黏合劑層。然後，在該黏合劑層表面黏 貼厚度ΙΟΟμπι的聚烯烴薄膜。之後，在5〇ΐ保存％小時 後’製作本實施例的切割薄膜。 <晶片接合薄膜的製作>
使相對於100份以丙稀酸乙甲基丙婦酸甲醋為 成分的丙烯酸醋類聚合物（根上工業株式會社製，商品名 Par細n W-197CM)為59份環氧樹脂1(JER株式會社製 =at 1004)、53份環氧樹脂2(脱株式會社製晌〇 M.1 Y樹脂（三井化學株式會社製，商品名
j和222份球狀二氧化石夕⑽mATECH 28 201012891 • Μ. 將該膠黏劑組合物的溶液塗布於作為剝離襯裡（隔膜） 的由經聚矽氧烷脫模處理的厚度38μπι的聚對苯二甲酸乙 二醇酯薄膜形成的脫模處理薄膜，然後在130Ϊ乾燥2分 鐘。由此，製作厚度25μιη的晶片接合薄膜。另外，將晶 片接5薄膜轉印到前述的切割薄膜的黏合劑層一側，得到 本實施例的切割/晶片接合薄膜。 <重均分子量Mw的測定> i 重均分子量Mw的測定通過GPC (凝膠滲透色譜法） 進行。測定條件如下所述。另外，重均分子量經聚苯乙烯 換算來計算。 測定裝置：HLC-8120GPC (製品名，東曹公司製） 色譜柱：TSKgelGMH-H(S)x2 (商品編號，東曹公司 製） θ
流量：0.5ml/分鐘 注入量：ΙΟΟμΙ $ 柱溫：40°C
洗脫液：THF 注入試樣濃度：0.1重量％ 檢測器：差示折射計 (實施例2〜15) 關於各實施例2〜15，變更為下表1所示的組成及配合 比例，除此以外，與所述實施例1同樣操作，製作切割/ 晶片接合薄膜。 29 201012891 JU 卜 sozx 茶 ♦ »〇 tn iTi in ITi m ΙΛ in in ΙΓ» U 00 00 oo 00 00 00 00 00 00 00 1 00 寸 «Λ 00 κη νο ^r, v〇 «r> Ό in VO Ό 的 \D so tn so so iTi s〇 Ο ο V) VO <0 i 湛 1 ΑΟΙ I f f i ( 1 1 1 w、 t 1 t 1 1 1 1 1 ΜΟΙ I O 〇〇 1—· 气A ^ ?s 2S\ 对00 —s-^ 10.9 (8〇I h S' Os巴 I 10.0 ISO) <> o 〇 ss 1 ^ 〇 00匕 二 10.0 (80) 10.0 (8Q1 - 10.0 m 10.0 (80)- 1 10.0 ! (80) « Wh Ι4ΗΒΑ I 1 1 1 1 1 1 ns —cs — 1 1 1 1 1 1 1 1 1 HEA 1 fO 〇 <> G <» r5 m 〇 ^ ro 〇 (S —Sw s| ^ o On 1 CO 〇 <> G, 〇 〇 <> ci ΓΠ 〇 σ；^ ο os ζ3 ^ 〇 〇 Ci 。s ON ζΐ t 1 1 1 1 i 1 1 1 1 1 1 I 1 1 i m 谐 * 1 1 1 1 1 1 1 1 1 1 1 1 1 1 30.8 (20) 39.0 _0〇) 40.5 (30) 37.3 (30) —— CN ^ 44.3 —(351— 39.0 (30) 38.2 _(3〇l_ 39.0 (30) 39.0 (30) 39.0 (30) 39.0 (30) 39.0 (30) 39.0 (30) 39.0 (30) 1 < 溫 r j-QA i 1 1 1 1 1 51.7 (70) 1 1 1 1 1 1 1 1 1 袈 [2EHA i 51.7 _ (70)_ 53.7 _ (7〇l— 49.4 _ (7〇)— 68.5 _ (8_5)_ _ 46.7 _ (65) 1 50.6 (70) _ 1 51.7 (70) 卜S' 卜S' ?；匕 51.7 (70) 51.7 (70) 59.7 (80) 實施例1 實施例2 實施例3 實施例4 實施例5 實施例6 實施例7 實施例8 實施例9 實施例10 實施例11 實施例12 實施例13 實施例14 實施例15 。％i:妹《雔衅^谢♦禽软耍长 <埏搞宕€:磋龙忘-B-IOV^IOW <女哎。o/oH-钝 «•0/0Η-_0'ΟΙΦ1衮避嬸寰《禽葙要咯 <^碱《«:^埤銮4¥8^ 寸女VHH <-6-秫。％H-H长碱磁类 201012891 另外，表1及後述的表2中記載的簡稱的含義如下所> 2EHA:丙烯酸_2_乙基己酯 i-OA :丙烯酸異辛酯 5 SA :丙烯酸硬脂酯 • VA:丙烯酸二十二烷酯 BA :丙烯酸正丁酯 HEA :丙烯酸_2_羥基乙酯 4HBA:丙烯酸-4-羥基丁酯 參ίο AOI · 2-丙稀醯氧乙基異氛酸醋 C/L :多異氰酸酯化合物（商品名“Colonate L”，曰本聚氨酷 株式會社製造） (比較例1〜7) 15 關於各比較例卜7 ’除了變更為下表2所示的組成及配合比 例以外，與所述實施例1同樣操作，製作切割/晶片接合薄膜。 201012891
J-S,卜 SOS 光聚合引發劑 in in in W^i yn C/L 00 00 00 00 00 00 00 ¢- so in Ό v〇 »r> v〇 \D s〇 vo 異氱酸酯化合物| AOI 1 1 1 1 1 1 1 MOI 13.0 (80) —· o 一 e 21.8 (80) 〇 11.6 (80) 〇 〇〇 ?s 12.4 (100) | 含羥基單體 4HBA 1 1 1 1 1 ! 1 HEA 12.2 po) 20.4 (50) c^i o' 10.8 (20) n 〇 〇N 3 53.8 (80) 1 1 1 1 t 1 丙烯酸酯B 1 1 1 1 1 1 ( s§ 34.0 (20) ! 42.6 (30) 34.2 (30) 39.0 (30) ^ ε 66.8 (60) 39.0 (30) 丙烯酸酯A 1 1 1 1 1 1 1 2EHA 1 56.4 (70) 45.4 (70) 51.7 (70) 81.6 (95) 25.3 (40) 51.7 (70) 比較例1 比較例2 比較例3 比較例4 比較例5 比較例6 比較例7 f/oH-«ool«tt黎避嬸寰庀矣敢要长 <鲤碱宕«:磋龙忘-6-¥811 寸ΜνωΗ *-β-缽。0/0H-裤长^^碱《«:^埤 。％叶林銮铟Itf墩♦矣溆要长<迴碱忘€:磁埤銮-6-1〇¥¥1〇^*女吹。。/0叶裨 201012891 (切割) 晶片接合薄祺，在以 並評價各切割/晶片 使用各實施例及比較例的各切割/ 下要點下實際進行半導體晶片的切割， 接合薄膜的性能。 ' 將半導體晶片（直徑8財、厚度G.6mm)進杆皆而 研磨處理’將厚度G.15mm的鏡面晶片作為工件使用。從 切割/晶>|接合薄膜上祕隔膜後，在其晶#接合薄膜上在 40C下用親壓接鏡面晶片使其黏貼，並進行切割。另外， 9十刀割是進行全切而得到1mm見方的晶片尺寸。對於切斷 後的半導體晶片及切割/晶片接合薄膜，確認有無晶片飛 散。晶片飛散將即使半導體晶片有一個飛散時也評價為 X，將無飛散時評價為〇。晶片磨削條件、黏貼條件及切 割條件如下所述。 <晶片磨削條件> 磨削裝置：迪思科（DISCO)公司製，dfg_8560 鲁 半導體晶片.8英寸直控（從厚度〇.6mm背面磨削至 〇.15mm) <黏貼條件>
黏貼裝置：曰東精機製ΜΑ-3000Π 黏貼速度：10mm/分鐘 黏貼壓力：0.15MPa 黏貼時的級溫：40°C 33 201012891 <切割條件> 切割裝置：迪思科公司製’ DFD-6361 切割環：2-8-1 (迪思科公司製） 切割速度：80mm/秒 切割刀片：
Z1 :迪思科公司製2050HEDD Z2 :迪思科公司製2050HEBB 切割刀片轉數：
Z1 : 40,〇〇〇rpm Z2 : 40,〇〇〇rpm 刀片高度： Z1 : 0.215mm (根據半導體晶片厚度決定（晶片厚 為 75μιη 時，為 〇.170mm)) 度 Z2 ： 0.085mm 切割方式：A方式/階段式切割 晶片晶片尺寸：1.0mm見方 (拾取） 鵪 使用各實施例及比較例的各切割/晶片接合薄_， 下要點下實際進行半導體晶片的切割後進行拾取，以 各切割/晶片接合薄膜的性能。 、砰價 將半導體晶片（直徑8英寸、厚度〇.6mm)進 研磨處理，將厚度0.075mm的鏡面晶片作為工=背面 切。割/晶片接合薄膜上麟隔膜後，在其晶片接 = 40°C下用輥壓接鏡面晶片使其黏貼，並進行切在 34 201012891 切割是進行全切而得到10mm見方的晶片尺寸。 們推:對各切⑽日片接合薄膜進行紫外線照射’將它 ^ ，進行使各晶片間為預定間隔的擴展步驟。另 切割/晶片接合薄膜的基材一側通過用針上推的方 ^拾取半導體晶片’進行拾取性評價。具體而言，連續地 t取400個半導體晶片，顯示在後述條件下進行時的成功 率。 <晶片磨削條件> 磨削襄置：迪思科公司製，DFG-8560 半導體晶片：8英寸直徑（從厚度〇.6mm背面磨削至 〇.〇50mm) <黏貼條件>
黏貼裝置：日東精機製MA-3000II 黏貼速度：l〇mm/分鐘 黏貼壓力：〇.15MPa φ 黏貼時的級溫：40°C <切割條件> 切割裝置：迪思科公司製，DFD-6361 切割環：2-8-1 (迪思科公司製） 切割速度：80mm/秒 切割刀片：
Z1 :迪思科公司製2050HEDD Z2 :迪思科公司製2050HEBB 35 201012891 切割刀片轉數： Z1 . 40,〇〇〇rpm Z2 . 40,000^!!! 刀片兩度： 晶片厚度 Z1 : (U70mm (根據半導體晶片厚度決定 為 50μιη 時，為 〇 170min)) Z2 · 0.085mm
切割方式：A方式/階段式切割 晶片晶片尺寸：l〇.〇mm見方 <紫外線照射條件> 型 紫外線（UV)照射裝置.日東精機（商品名、麗_綱 糸外線照射積分光量·· 300mJ/cm2 另外，紫外線照射是從聚烯烴薄膜一側進行。 <拾取條件> 關於拾取條件，分別通過下表3所示的條件進行
表3 針 全長10mm、直徑〇.7mm、銳角15度頂 端 R350jnm 針數（根） 9 --— 一針上推量（um) 250 ~~~~~ ' 針上推速度（mm/秒） 5—^^~— 夾頭保持時間（奎秒） L 1000 ~ - 擴展（mm/秒） 3 ^~- 36 201012891 (拉伸彈性模量的測定方法） 在將樣品尺寸設定為初期長度10mm、斷面積 0.1〜0.5mm2，測定溫度23°c、夾盤間距5〇mm、拉伸速度 50mm/分鐘的測定條件下，在md方向或TD方向進行拉 ， 伸試驗，測定各方向上樣品的伸長變化量（mm)。結果， 在得到的S-S曲線的初期上升部分引切線，將該切線相當 於100%伸長時的拉伸強度除以基材薄膜的斷面積，得到 纟伸彈性模量。另外’對於紫外線照射後的拉伸彈性模量 ❹ 的測定，根據所述照射條件從聚烯烴薄膜一側照射紫外線 之後進行。 ' (剝離黏合力） 從各切割/晶片接合薄膜上切出寬1〇111111的試片，將且 黏貼於在4G°C的熱板上載置的魏面晶片上。玫置約& 分鐘後，從切割薄膜一侧照射紫外線，再使用拉伸試驗 測定剝離黏合力。測定條件是：剝離角度15。、技伸 3〇〇mm/分鐘。另外，試片的保存及剝離黏合力的測定在溫 參 度23<C、相對濕度50%的環境下進行。另外，紫外綠^ 射條件如下所述。 、… <紫外線照射條件> 紫外線（UV)照射裝置：高壓水銀燈 紫外線照射積分光量：5〇〇mJ/cm2 輸出功率：75W 照射強度：150mW/em2 表4 37 201012891
Mw(萬） 拉伸彈性模董 (Mpa) UV固化後的拉 伸彈性模量 (MPa) 剝離黏合力 (N/10mm) 拾取 (%) 晶片飛散 實施例1 54 1.0 16.1 1.13 100.0 〇 實施例2 50 0.7 10.3 1.20 99.8 〇 實施例3 60 1.6 70.9 1.16 100.0 〇 實施例4 58 1.0 18.4 1.26 99.5 〇 實施例5 53 1.2 19.4 1.03 100.0 〇 實施例6 54 1.2 16,2 1.15 100.0 〇 實施例7 53. 1.0 17.2 1.10 100.0 〇 實施例8 54 1.0 16.0 1.11 100.0 〇 實施例9 54 1.0 12.3 1.21 99.8 〇 實施例10 54 1.0 20.7 1.19 100.0 〇 實施例11 40 0.9 15.8 1.14 100.0 〇 實施例12 85 1.0 16.8 1.21 100.0 〇 實施例13 54 0.6 8.7 1.21 99.5 〇 實施例14 54 2.0 25.4 1.15 100.0 〇 實施例15 55 1.2 15.8 1.09 100.0 〇 201012891 表5
Mw(萬） — 抵伸彈性模 量 UV固化後的拉伸 彈性模量 (MPa) 軔離勘合 力 —2^〇nun) 拾取 (%) 晶片飛 散 比較例1 76 比較例2 52 〜___1.4 Λ A 78.4 1.80 0.0 〇 比較例3 59 ~~~~~~?d_ 〇./ 25.5 〇 比較例4 54 115 1.55 ----- 21.0 〇 cn 10.5 147 J 0.0 〇 比較例6 J / 52 L2__ 17.1 1.44 ~~~~— 2.5 〇 比較例7 il_ 0.5 17.4 23.1 100.0 X — 1.53 ~~~~^ 24.0 —
雖然本發明已以實施例揭露如 ^發明，任何所屬技術領域中具有物非，以限定 本發明之精神和範圍内，當可作 在不脫離 【圖式簡單朗】 之申料利範_界定者為準。 薄膜^剖面本發明的實施方式之—的切割/晶片接合 薄膜的剖面示本翻的另—實施方式的切割/晶片接合 合薄膜安裝半導趙 1:::=接:薄膜中的晶片接 【主要元件符號說明】1子的剖面不意圖。 1 :基材 2:黏合劑層 39 201012891 3:晶片接合薄膜 4:半導體晶片 5:半導體晶片 6 :被黏物 7 :焊線 8:密封樹脂 9 :墊片 10、11 :切割/晶片接合薄膜

Claims (1)

  1. 201012891 七、申請專利範圍： I 種切割/晶片接合薄膜，具有在基材上具有黏合 劑層的切割薄膜和在該黏合劑層上設置的晶片接合薄膜， 包括： 所述黏合劑層由丙烯酸類聚合物形成，所述丙烯酸類 聚合物由CHfCHCOOR1表示的丙婦酸酯a、 CHfCHCOOR2表示的丙烯酸酯b、含羥基單體、和分子 内具有自由基反應性碳碳雙鍵的異氰酸酯化合物構成，上 述式中，Rl為碳原子數6〜10的烷基，R2為碳原子數η以 上的烷基； 所述丙烯酸酯A和所述丙烯酸酯B的配合比例是：相 對於丙烯酸酯A 60〜90莫耳％，丙烯酸酯B為40〜10莫耳 % ； 所述含羥基單體的配合比例是：相對於所述丙烯酸酯 A和丙烯酸酯B的總量1〇〇莫耳％在1〇〜30莫耳％的範圍 内； 所述異氰酸酯化合物的配合比例是：相對於所述含羥 基單體100莫耳％在70〜90莫耳％的範圍内；以及 所述晶片接合薄膜由環氧樹脂形成。 2.如申請專利範圍1所述之切割/晶片接合薄膜，其 中所述含羥基單體為選自由（甲基）丙烯酸_2·羥基乙酯、 (曱基）丙烯酸-2-羥基丙酯、（甲基）丙烯酸-4-羥基丁酯、 (曱基）丙烯酸-6-經基己酯、（曱基）丙烯酸-8-羥基辛酯、 (甲基）丙烯酸-10-羥基癸酯、（曱基）丙烯酸-12-羥基十 201012891 二烷酯和（甲基）丙烯酸（4· 群組中的至少任意一種。 基環已基）甲酯紐成的 3.如_請專利範圍】 膜，其中所述具有自由基反 “之切割/晶片接合薄 物為選自2-甲基丙烯C雙鍵的異氛酸醋化合 基異氰酸酯的至少任意一種。、氦酸酯或者2-丙烯醯氧乙 4.如申請專利範圍〗 接合薄膜，其中所述㈣酸類聚二―項所^之切割/晶片 萬〜川〇萬的範圚内β 、 σ物的重均分子量在35 參 接合圍人1至4中任-項所述之切_ 的拉伸彈性模劑層的紫外線照射前的、坑下 的、23。「下6^ .〜.5MPa的範圍内，紫外線照射後 、 C下的拉伸彈性模量在7〜lOOMPa的範圍内。 人如巾μ專利範® 1 S 5巾任-項所述之切割/晶片 膜其中構成所述黏合劑層的所述丙婦酸類聚合物 不含丙稀酸作為單體成分。 42
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