TW200952225A - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- TW200952225A TW200952225A TW098123458A TW98123458A TW200952225A TW 200952225 A TW200952225 A TW 200952225A TW 098123458 A TW098123458 A TW 098123458A TW 98123458 A TW98123458 A TW 98123458A TW 200952225 A TW200952225 A TW 200952225A
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- Prior art keywords
- combination
- light
- foregoing
- materials
- copper
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 54
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 9
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 5
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910001431 copper ion Inorganic materials 0.000 claims abstract description 3
- 150000002500 ions Chemical class 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 129
- 239000010949 copper Substances 0.000 claims description 67
- 229910052802 copper Inorganic materials 0.000 claims description 59
- 150000001875 compounds Chemical class 0.000 claims description 51
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 47
- 150000003839 salts Chemical class 0.000 claims description 20
- 229910052693 Europium Inorganic materials 0.000 claims description 17
- 229910052791 calcium Inorganic materials 0.000 claims description 14
- 229910052749 magnesium Inorganic materials 0.000 claims description 14
- 229910052712 strontium Inorganic materials 0.000 claims description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 13
- 229910052788 barium Inorganic materials 0.000 claims description 13
- 229910052790 beryllium Inorganic materials 0.000 claims description 13
- 229910052745 lead Inorganic materials 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 12
- 229910052772 Samarium Inorganic materials 0.000 claims description 12
- 229910052725 zinc Inorganic materials 0.000 claims description 12
- 229910052708 sodium Inorganic materials 0.000 claims description 11
- 229910052718 tin Inorganic materials 0.000 claims description 11
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 10
- 229910052771 Terbium Inorganic materials 0.000 claims description 10
- 150000004645 aluminates Chemical class 0.000 claims description 10
- 229910052797 bismuth Inorganic materials 0.000 claims description 10
- 229910052792 caesium Inorganic materials 0.000 claims description 10
- 229910052681 coesite Inorganic materials 0.000 claims description 10
- 229910052906 cristobalite Inorganic materials 0.000 claims description 10
- 229910052700 potassium Inorganic materials 0.000 claims description 10
- 229910052701 rubidium Inorganic materials 0.000 claims description 10
- 229910052682 stishovite Inorganic materials 0.000 claims description 10
- 229910052905 tridymite Inorganic materials 0.000 claims description 10
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 9
- 229910052793 cadmium Inorganic materials 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 229910052744 lithium Inorganic materials 0.000 claims description 9
- 229910052706 scandium Inorganic materials 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052779 Neodymium Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 229910052746 lanthanum Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 8
- -1 AhLa Inorganic materials 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- 229910052691 Erbium Inorganic materials 0.000 claims description 5
- 229910052689 Holmium Inorganic materials 0.000 claims description 5
- 229910019142 PO4 Inorganic materials 0.000 claims description 5
- 229910052775 Thulium Inorganic materials 0.000 claims description 5
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000010452 phosphate Substances 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052765 Lutetium Inorganic materials 0.000 claims description 3
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Inorganic materials O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 150000000703 Cerium Chemical class 0.000 claims 2
- KKMOSYLWYLMHAL-UHFFFAOYSA-N 2-bromo-6-nitroaniline Chemical compound NC1=C(Br)C=CC=C1[N+]([O-])=O KKMOSYLWYLMHAL-UHFFFAOYSA-N 0.000 claims 1
- 230000008859 change Effects 0.000 abstract description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 46
- 239000000203 mixture Substances 0.000 description 25
- 230000005284 excitation Effects 0.000 description 24
- 239000002994 raw material Substances 0.000 description 22
- 239000002253 acid Substances 0.000 description 18
- 230000004907 flux Effects 0.000 description 15
- 238000002360 preparation method Methods 0.000 description 15
- 238000010304 firing Methods 0.000 description 10
- 229910000018 strontium carbonate Inorganic materials 0.000 description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 8
- RSEIMSPAXMNYFJ-UHFFFAOYSA-N europium(III) oxide Inorganic materials O=[Eu]O[Eu]=O RSEIMSPAXMNYFJ-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 150000001860 citric acid derivatives Chemical class 0.000 description 6
- 238000002485 combustion reaction Methods 0.000 description 6
- 239000011572 manganese Substances 0.000 description 6
- 238000009877 rendering Methods 0.000 description 6
- 229910000019 calcium carbonate Inorganic materials 0.000 description 4
- 238000003490 calendering Methods 0.000 description 4
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Inorganic materials [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 3
- 238000001354 calcination Methods 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000004679 hydroxides Chemical class 0.000 description 3
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 150000002611 lead compounds Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- 241000218645 Cedrus Species 0.000 description 1
- 239000005749 Copper compound Substances 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229940037003 alum Drugs 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 235000011148 calcium chloride Nutrition 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- GTDCAOYDHVNFCP-UHFFFAOYSA-N chloro(trihydroxy)silane Chemical class O[Si](O)(O)Cl GTDCAOYDHVNFCP-UHFFFAOYSA-N 0.000 description 1
- ITVPBBDAZKBMRP-UHFFFAOYSA-N chloro-dioxido-oxo-$l^{5}-phosphane;hydron Chemical class OP(O)(Cl)=O ITVPBBDAZKBMRP-UHFFFAOYSA-N 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910001679 gibbsite Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910001631 strontium chloride Inorganic materials 0.000 description 1
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 1
- XHGGEBRKUWZHEK-UHFFFAOYSA-L tellurate Chemical compound [O-][Te]([O-])(=O)=O XHGGEBRKUWZHEK-UHFFFAOYSA-L 0.000 description 1
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 description 1
- 229910000391 tricalcium phosphate Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
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- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/664—Halogenides
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- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/666—Aluminates; Silicates
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- C09K11/74—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth
- C09K11/75—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth containing antimony
- C09K11/751—Chalcogenides
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- C09K11/755—Halogenides
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- C09K11/7743—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing terbium
- C09K11/7751—Vanadates; Chromates; Molybdates; Tungstates
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- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/7795—Phosphates
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L33/50—Wavelength conversion elements
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Abstract
Description
200952225 , 森 u.doc 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種發光元件，且特別是有關於一種 至少包括發光二極體及燐光體之發光元件，前述之燐光體 包括含銅摻雜之化合物以改變光線之波長。 【先前技術】 以往用以使用在電子元件中的發光元件（發光二極 體）目前已被使用在汽車以及照明產品上。由於發光元件 具有優越的電性與結構特性，因此發光元件的需求已逐漸 增加。相較於燐光燈（fluorescent lamps)與白熱燈 (incandescent lamps)，白光發光二極體(white LEDs)已受到 相當大的關注。 在發光二極體技術中，已有多種實現白光的方法被提 出。一般實現白光發光二極體的技術係將燐光體置於發光 二極體上，並且使發光二極體所發出的主光線(primary emission)與用以改變波長的燐光體所發出之二次光線 (secondary emission)混合。舉例而言，如 WO 98/05078 與 WO 98/12757中所述，其係使用一個能夠發出波長波峰 (peak wavelength)介於450-490耐米之間的藍光發光二極 體以及镱銘石權石材料(YAG group material)，前述之镱紹 石榴石材料能夠吸收藍光發光二極體，並且發出淡黃色光 線（大部分），此淡黃色光線的波長不同於其所吸收之光 線的波長。 然而，在上述常用的白光發光二極體中，其色溫範圍 3 200952225^ 很狭窄’約介於6,000Κ-8,000Κ之間，且其現色指數(Color Rendering Index ’ CRI)約介於60至75之間。因此，很難 製造出色座標與色溫與可見光(visible light)相似的白光發 光二極體。這也是僅能實現寒冷感覺(cold feeiing)的白色光 之原因之一。此外，使用於白光發光二極體中的燐光體在 水、蒸氣或極性溶劑中通常不穩定’且此不穩定性可能會 導致白光發光二極體的發光特性改變。 【發明内容】 本發明係提供一種波長轉換型發光元件(wavelength conversion LED)。在本發明一實施例中，係提供一種發光 元件。此發光元件包括基材、多個配置於基材上之電極、 用以發出光線且配置於其中一電極上之發光二極體、用以 改變光線波長的燐光體’且燐光體實質上係至少覆蓋住部 分的發光二極體，以及用以將發光二極體連接至其他電極 之導電元件。 在本發明另一實施例中，發光元件包括多個接腳、配 置於其中一接卿末端之二極體支架(diode holder)、配置於 二極體支架内且包括多個電極之發光二極體、用以改變光 線波長的燐光體，且燐光體實質上係至少覆蓋住部分的發 光二極體，以及用以將發光二極體連接至其他電極之導電 元件。 在本發明另一實施例中，發光元件包括殼體、至少部 分配置於殼體内之散熱器、配置於散熱器上之導線架、配 置於其中一導線架上之發光二極體、用以改變光線波長的 200952225 燐光體，且燐光體實質上係至少覆蓋住部分的發光二棰 體’以及用以將發光二極體連接至其他導線架之導電元件。 本實施例之燐光體可包括二價銅離子及氧。燐光體圩 包括稀土元素和/或其他發光離子。燐光體可包括含銅的鋩 酸鹽、含銅之銻酸鹽、含銅之鍺酸鹽、含銅之鍺酸鹽-矽酸 鹽、含銅之磷酸鹽，或前述材料之任意組合。本實施例邡 提供燐光體之分子式。BACKGROUND OF THE INVENTION 1. Field of the Invention A compound containing copper doping is included to change the wavelength of the light. [Prior Art] Light-emitting elements (light-emitting diodes) conventionally used in electronic components have been used in automobiles and lighting products. Since the light-emitting elements have superior electrical and structural characteristics, the demand for light-emitting elements has gradually increased. Compared to fluorescent lamps and incandescent lamps, white LEDs have received considerable attention. In the light-emitting diode technology, various methods for realizing white light have been proposed. Generally, the technology for realizing a white light emitting diode places a phosphor on a light emitting diode, and causes a primary light emitted by the light emitting diode and a secondary light emitted by the phosphor used to change the wavelength. (secondary emission) mixing. For example, as described in WO 98/05078 and WO 98/12757, a blue light emitting diode capable of emitting a wavelength peak between 450 and 490 meters and a Ming Shishi YAG group material, the aforementioned garnet material can absorb the blue light emitting diode and emit a light yellow light (mostly), the light yellow light has a wavelength different from the wavelength of the light absorbed by it. However, in the above-mentioned conventional white light emitting diode, the color temperature range 3 200952225 is very narrow 'about 6,000 Κ - 8,000 ,, and its Color Rendering Index ' CRI is about 60 to Between 75. Therefore, it is difficult to produce a white light emitting diode having an excellent coordinate similar to a color temperature and a visible light. This is one of the reasons why white light can only be achieved by cold feeiing. Further, the phosphor used in the white light-emitting diode is generally unstable in water, vapor or a polar solvent' and this instability may cause a change in the light-emitting characteristics of the white light-emitting diode. SUMMARY OF THE INVENTION The present invention provides a wavelength conversion LED. In an embodiment of the invention, a light emitting element is provided. The light-emitting element comprises a substrate, a plurality of electrodes disposed on the substrate, a light-emitting diode for emitting light and disposed on one of the electrodes, a phosphor for changing the wavelength of the light, and the phosphor is substantially at least A portion of the light-emitting diode is covered, and a conductive element for connecting the light-emitting diode to the other electrode. In another embodiment of the present invention, a light-emitting element includes a plurality of pins, a diode holder disposed at one of the ends of the contact, and a light-emitting diode disposed in the diode holder and including a plurality of electrodes The body, the phosphor for changing the wavelength of the light, and the phosphor is substantially at least a portion of the light emitting diode, and a conductive element for connecting the light emitting diode to the other electrode. In another embodiment of the present invention, a light emitting device includes a housing, a heat sink disposed at least partially in the housing, a lead frame disposed on the heat sink, and a light emitting diode disposed on one of the lead frames. The 200952225 phosphor is changed in wavelength of light, and the phosphor is substantially at least partially covered by the light-emitting diodes and the conductive elements for connecting the light-emitting diodes to other lead frames. The phosphor of this embodiment may include divalent copper ions and oxygen. The phosphor 圩 includes rare earth elements and/or other luminescent ions. The phosphor may include a copper-containing niobate, a copper-containing niobate, a copper-containing niobate, a copper-containing niobate-niobate, a copper-containing phosphate, or any combination of the foregoing. This embodiment provides a molecular formula of a phosphor.
為讓本發明之上述和其他目的、特徵和優點能更明顯 易僅，下文特舉較佳實施例，並配合所附圖式，作詳細説 明如下。 【實施方式】 明參照所附圖式，本發明將對波長轉換型發光元件進 行詳細之說明，且為了易於說明，將分別針對發光元件以 及燐光體進行說明如下。 (發光元件） 圖1 %示為依照本發明一實施例晶片型態發光元件封 裝體的侧向剖面圖。晶片型態發光元件封裝體包括至少一 發光,極體以及一燐光物質(Phosphorescent substance)。電 極5係形成於基材1的兩侧。用以發出光線之發光二極 置於其中—個電極5上。發光二極體6係藉由導電 道始1配置於電極5上。發光二極體6的一個電極係藉由 導線2與電極5連接。 光二極體適於發出具有大波長職的統，例如， 從系卜光到可見光之波長範圍。在本發明之一實施例中， 5 200952225 可使用紫外光發光二極體及/或藍光發光二極體。 燐光體，即燐光物質3係配置於發光二極體6的頂面 與側面上。本發明之璘光體3包括錯及/或銅摻雜之紹酸鹽 型態之化合物、錯及/或銅換雜之珍酸鹽、錯及/或銅摻雜 之錄酸鹽、錯及/或銅摻雜之鍺酸鹽、錯及/或銅摻雜之錯 酸鹽-石夕酸鹽、船及/或銅摻雜之碟酸鹽、或前述材料之任 意組合。燐光體3可將發光二極體6所發出之光線的波長 轉換為另一波長或其他波長。在本發明一實施例中，轉換 後的光線係位在可見光的波長範圍内。在燐光體3與硬化 樹脂混合後，燐光禮3可運用至發光二極體6中。在鱗光 體3與導電膠9混合之後’包含有燐光體3之硬化樹脂亦 可運用在發光二極體6的底部。 配置於基材1上之發光二極體6可藉由一或多種密 封材料10進行密封的動作。燐光體3係配置於發光二極 體6之頂面及侧面上。鱗光體3亦可在製造過程中分佈於 硬化的密封材料中。上述的製造方法係揭露於美國專利us 6,482,664 ’其所有内容於此一同併入參考。 燐光體3包括鉛及/或銅摻雜之化合物。燐光體3包括 一種或多種單一化合物。前述之單一化合物之發光波峰 (emission peak)例如係介於約44〇耐米至約5〇〇耐米之間、 約500耐米至約590耐米之間，或是約580耐米至7〇〇曰耐 米之間。燐光體3包括-種或多種燐紐，其 發光波峰。 上遮之 關於發光元件40’當發光二極體6接收到冑源供應器 200952225 , • i.doc ❹ Ο 所提供的電源時，發光二極體6會發出主光線。之後，主 光線會激發燐光體3，而燐光體3會使主光線轉換為較長 波長的光線（一次光線）^從發光二極體6所發出的主光線 與從燐光體3所發出的二次光線擴散並混合在一起，以使 發光二極體6發出特定顏色之可見光頻譜。在本發明一實 施例中，可將一個以上具有不同發光波峰的發光二極體配 置在一起。此外，若適當地調整燐光體的混合比例，本發 明可獲得特定的色光、色溫以及現色指數(CRJ)。 承上述，若可適當地控制發光二極體6與燐光體3内 所包，之化合物，即可獲得想要的色溫或特定之色座標， 特別疋在大範圍的色溫，例如從約2,〇〇〇κ至約8 〇〇〇κ或 約1〇,000Κ之間，及/或現色指數約大於9〇。因此，本發 明之發光元件可使祕家電、立體聲音響、電信元件，以 及内/外展覽類示H等電子元件巾。由於本發明之發光元件 可提供與可見光相似的色溫與現色指數，因此本發明之發 光元件亦可使用於汽車與照明產品中。 圖2繪不為依照本發明一實施例頂蓋型態之發光元件 2體的侧㈣面圖。本發明之頂蓋鶴的發光元件封裝 =與圖中的晶片型態之發光元件封裝體40具有相似的結 欲=蓋型態之發光元件封裝體5G具有反射器31，其可 發光二極體6所發出的光線反射至特定方向。 f頂蓋型態之發統件封裝體5Q中，可配置一個以 2先二極體。每—個發光二極體具有與其他發光二極 不同之波長波峰。燐光體3包❹個具有不暖光波峰 7 200952225^ 的單、化。物、述各種化合物的比例可經過適當的控 制。前^之燐光體3可應餘發光二極體及/朗勻地分佈 於反射II 31的硬化材料^以下將進行更詳細之說明本 發月之燐光體包括錯及/或銅換雜之銘酸鹽型態之化合 物氣及/或銅摻雜之發酸鹽、錯及/或銅換雜之錄酸鹽、 乱及/或銅摻雜之錯酸鹽、n/或銅摻雜之錯酸鹽_石夕酸 鹽、錯及/或銅摻雜之觀鹽，或前述材料之任意組合。 在本發明之一實施例中，圖1與圖2中的發光元件包 括-具有良料紐之金屬基材。此發光元件可輕易地將 發光二極體所發出的熱散去。因此，可製造出高功率的發 光元件。若提供散熱器於金屬基材之下，可更有效率地將 發光二極體所發出的熱散去。 圖3緣示為依照本發明一實施例燈體型態之發光元件 封裝體的側向剖面圖。燈體型態之發光元件6〇具有一對 接腳51、52以及配置於其中一接腳末端之二極體支架53。 二極趙支架53具有如杯子的形狀，且一個或多個發光二極 體6係配置於二極體支架53中。當多個發光二極體配置於 二極體支架53中時，每一個發光二極體53具有與其他發 光二極體不同之波長波峰。發光二極體6的電極例如係透 過導線2而與接腳52連接。 一定體積且混合於環氧樹脂中的燐光體係配置於二 極體支架53上。以下將進行更詳細之說明，燐光體3例 如包括鉛及/或銅摻雜之化合物。 此外，二極體支架上例如配置有發光二極體6，且燐 200952225^ 光體3例如係藉由硬化材料，如環氧樹脂或矽樹脂(silicon resin)進行密封。 在本發明一實施例中，燈體型態之發光元件6〇可具 有一對以上的接腳。 、 圖4繪示為依照本發明一實施例高功率發光元件封裝 體的侧向剖面圖。散熱器71係配置於高功率發光元件7〇 的殼體73内，且散鮮71係部分暴露於外界。The above and other objects, features, and advantages of the present invention will be apparent from the description of the appended claims. [Embodiment] The wavelength conversion type light-emitting element will be described in detail with reference to the drawings, and for the sake of convenience of explanation, the light-emitting element and the phosphor are respectively described below. (Light-emitting element) Fig. 1 is a side sectional view showing a wafer-type light-emitting element package in accordance with an embodiment of the present invention. The wafer type light emitting device package includes at least one of a light emitting body, a polar body, and a phosphorescent substance. The electrodes 5 are formed on both sides of the substrate 1. A light-emitting diode for emitting light is placed on one of the electrodes 5. The light-emitting diode 6 is disposed on the electrode 5 by the conductive track 1 . One electrode of the light-emitting diode 6 is connected to the electrode 5 by a wire 2. The photodiode is adapted to emit a system having a large wavelength, for example, from the wavelength of the light to the visible light. In an embodiment of the invention, 5 200952225 may use an ultraviolet light emitting diode and/or a blue light emitting diode. The phosphor, that is, the phosphorescent material 3, is disposed on the top surface and the side surface of the light-emitting diode 6. The phosphor 3 of the present invention comprises a compound which is mis- and/or copper-doped, and which is mis- and/or copper-doped, acid salt, and/or copper-doped acid salt. / or copper-doped citrate, erroneous and / or copper-doped acid salt - oxalate, ship and / or copper doped discate, or any combination of the foregoing. The phosphor 3 converts the wavelength of the light emitted from the light-emitting diode 6 to another wavelength or other wavelength. In an embodiment of the invention, the converted light is in the wavelength range of visible light. After the phosphor 3 is mixed with the hardening resin, the twilight 3 can be applied to the light-emitting diode 6. After the scale body 3 is mixed with the conductive paste 9, the hardened resin containing the phosphor 3 can also be applied to the bottom of the light-emitting diode 6. The light-emitting diode 6 disposed on the substrate 1 can be sealed by one or more sealing materials 10. The phosphor 3 is disposed on the top surface and the side surface of the light-emitting diode 6. The scale 3 can also be distributed in the hardened sealing material during the manufacturing process. The above-described manufacturing method is disclosed in U.S. Patent No. 6,482,664, the disclosure of which is incorporated herein by reference. The phosphor 3 includes a lead and/or copper doped compound. The phosphor 3 includes one or more single compounds. The emission peak of the foregoing single compound is, for example, between about 44 〇 to about 5 〇〇, between about 500 耐 and about 590 耐, or about 580 耐 to 7 Between 〇〇曰米. The phosphor 3 includes - or a plurality of neodymium, the luminescent peaks thereof. With respect to the light-emitting element 40', when the light-emitting diode 6 receives the power supplied by the source supply device 200952225, • i.doc ❹ 发光, the light-emitting diode 6 emits a chief ray. After that, the chief ray excites the illuminator 3, and the illuminator 3 converts the chief ray into a longer wavelength ray (primary ray) ^ the chief ray emitted from the illuminating diode 6 and the second ray emitted from the illuminating body 3. The secondary rays are diffused and mixed together so that the light-emitting diode 6 emits a visible light spectrum of a specific color. In one embodiment of the invention, more than one light emitting diode having different illuminating peaks can be arranged together. Further, if the mixing ratio of the phosphor is appropriately adjusted, the present invention can obtain a specific color light, a color temperature, and a color rendering index (CRJ). In view of the above, if the compound contained in the light-emitting diode 6 and the phosphor 3 can be appropriately controlled, a desired color temperature or a specific color coordinate can be obtained, particularly in a wide range of color temperatures, for example, from about 2, 〇〇〇κ to about 8 〇〇〇κ or about 1〇,000Κ, and/or the color rendering index is greater than about 9〇. Therefore, the light-emitting element of the present invention can be used to display electronic components such as H, such as secret appliances, stereos, telecommunication components, and internal/external exhibitions. Since the light-emitting element of the present invention can provide a color temperature and a color rendering index similar to visible light, the light-emitting element of the present invention can also be used in automotive and lighting products. 2 is a side (four) side view of a body of a light-emitting element 2 of a top cover type in accordance with an embodiment of the present invention. Light-emitting element package of the top crane of the present invention = similar to the wafer-type light-emitting element package 40 in the figure, the light-emitting element package 5G having a cover type has a reflector 31, which can emit a light-emitting diode The light emitted by 6 is reflected in a specific direction. In the top cover package 5Q of the f-top type, one of the two first diodes can be disposed. Each of the light-emitting diodes has a wavelength peak different from that of the other light-emitting diodes. The 燐 light body 3 packs one with a warm light peak 7 200952225^ single. The ratio of the substance to the various compounds can be appropriately controlled. The front of the phosphor 3 can be used in the residual light-emitting diode and / or evenly distributed in the hardened material of the reflection II 31 ^ will be described in more detail in this month's light body including the wrong and / or copper replacement Acid-formed compound gas and/or copper-doped acid generator, mis- and/or copper-exchanged acid salt, chaotic and/or copper-doped acid salt, n/ or copper doping error An acid salt, a salt, and/or a copper-doped salt, or any combination of the foregoing. In an embodiment of the invention, the light-emitting elements of Figures 1 and 2 comprise a metal substrate having a good material. This light-emitting element can easily dissipate the heat emitted from the light-emitting diode. Therefore, a high-power light-emitting element can be manufactured. If a heat sink is provided under the metal substrate, the heat emitted by the light-emitting diode can be dissipated more efficiently. Fig. 3 is a side cross-sectional view showing a light-emitting element package of a lamp body type according to an embodiment of the present invention. The lamp body type light-emitting element 6A has a pair of pins 51, 52 and a diode holder 53 disposed at one of the pin ends. The dipole Zhao holder 53 has a shape like a cup, and one or more light emitting diodes 6 are disposed in the diode holder 53. When a plurality of light-emitting diodes are disposed in the diode holder 53, each of the light-emitting diodes 53 has a wavelength peak different from that of the other light-emitting diodes. The electrode of the light-emitting diode 6 is connected to the pin 52 via, for example, the wire 2. A calendering system of a certain volume and mixed in an epoxy resin is disposed on the diode holder 53. As will be explained in more detail below, the phosphor 3 comprises, for example, a lead and/or copper doped compound. Further, the diode holder is, for example, provided with a light-emitting diode 6, and the light-emitting body 3 is sealed, for example, by a hardening material such as an epoxy resin or a silicon resin. In an embodiment of the invention, the light-emitting element 6' of the lamp body type may have more than one pair of pins. 4 is a side cross-sectional view of a high power light emitting device package in accordance with an embodiment of the present invention. The heat sink 71 is disposed in the casing 73 of the high-power light-emitting element 7A, and the scattered 71-line portion is exposed to the outside.
架74係從殼體73突出。 f 一個或多個發光二極體係配置於其中一導線架74，且 發光二_ 6的電極例如係藉由導線與另-導線架74遠 接。導電膠9係配置於發光二極體6與導線架74之間 光體3則係配置於發光二極體6的頂面與側面上。 圖示為依照本發明另—實關高功率發光 裝體的側向剖面圖。 千封 高功率發光元件80具有殼體63，以容納發光 6一、7 ’配置於發光二極體6、7之頂面與側面的鱗光體極3髅 =或夕個散熱器6卜62，以及一個或多個導線架Μ -J 64可用以接收電源供應器所提供的電源，且 64係從殼體63突出。 緣架 在圖4與圖5之高功率發光元件7〇、⑽中，鱗 加至配置於散熱器與發光元件之間轉體+。此外， 本發明可將透鏡與殼體63、73結合。 明之高功率發光元件中可選擇性地使用一個 ，夕個發光二極體，且燐光體可依照發光二極體而進行調 9 200952225 整。以下將進行更詳細之說明，燐光體包括錯及/或銅摻雜 之化合物。 本發明之高功率發光元件例如可具有冷卻器（未緣 示）及/或散熱器。本發明可使用空氣或風扇對冷卻此冷卻 器。 本發明之發光元件並不限定於前述之結構，這些結構 可根據發光二極體的特性、燐光體的特性，以及光線的波 長作適當的修改。此外，尚可增加新的部件於前述之結構 中。 ❹ 本發明中’用以舉例之燐光體係說明如下。 (燐光體） 本發明之燐光體包括鉛及/或銅摻雜之化合物。燐光體 了猎由紫外光及/或可見光，例如藍光，來激發。化合物包 括鋁酸鹽、矽酸鹽、銻酸鹽、鍺酸鹽、鍺酸鹽_矽酸鹽，或 鱗酸鹽型態之化合物。 銘酸鹽型態之化合物可包括具有分子式（1)、分子式 (2) ’及/或分子式(5)之化合物。 a(M^0).KM22〇).c(M2x).dAl2〇3 t X〇y) ^1\ 其中，M1可為Pb、Cu ’及/或前述材料之任意組合； 可為一個或多個一價元素(monovalent elejnents)，如 1、Na、K、Rb、Cs、Au、Ag ’及/或前述材料之任意組 200952225* 合，Μ可為一個或多個二價元素(diva〗ent elements)，如 Be、Mg、Ca、Sr、Ba、Zn、Cd、Μη，及/或前述材料之任 意組合，Μ可為一個或多個三價元素(trjvaient eiements)， 如Sc、B、Ga、In，及/或前述材料之任意組合；M5可為 Si、Ge、Ti、Ζγ、Μη、V、Nb、Ta、W、Mo ’ 及/或前述 材料之任意組合；M6可為Bi、Sn、Sb、Sc、Y、La、Ce、The frame 74 protrudes from the housing 73. f One or more light-emitting diode systems are disposed in one of the lead frames 74, and the electrodes of the light-emitting diodes 6 are, for example, remotely connected to the other-lead frame 74 by wires. The conductive paste 9 is disposed between the light-emitting diode 6 and the lead frame 74. The light body 3 is disposed on the top surface and the side surface of the light-emitting diode 6. Shown is a side cross-sectional view of another high-power illuminating assembly in accordance with the present invention. The plurality of high-power light-emitting elements 80 have a casing 63 for accommodating the light-emitting elements 6 and 7' disposed on the top surface and the side surface of the light-emitting diodes 6, 7 (3) or the surface of the light-emitting diodes. And one or more lead frames J-J 64 can be used to receive the power provided by the power supply, and the 64 series protrudes from the housing 63. Edge frame In the high power light-emitting elements 7A, (10) of Figs. 4 and 5, the scale is applied to the rotating body + disposed between the heat sink and the light-emitting element. Further, the present invention can combine the lens with the housings 63, 73. In the high-power light-emitting element of the Ming, one light-emitting diode can be selectively used, and the phosphor can be adjusted according to the light-emitting diode. As will be explained in more detail below, the phosphor includes a compound that is mis- and/or copper-doped. The high power illuminating element of the present invention may, for example, have a cooler (not shown) and/or a heat sink. The present invention can use an air or fan pair to cool the cooler. The light-emitting element of the present invention is not limited to the above-described structure, and these structures can be appropriately modified depending on the characteristics of the light-emitting diode, the characteristics of the phosphor, and the wavelength of the light. In addition, new components can be added to the aforementioned structure.燐 In the present invention, the calendering system exemplified is explained as follows. (Silver Body) The phosphor of the present invention includes a lead and/or copper doped compound. The strontium is excited by ultraviolet light and/or visible light, such as blue light. The compounds include aluminates, citrates, citrates, citrates, citrates, or sulphate-type compounds. The compound of the acid salt type may include a compound having the formula (1), the formula (2) ' and/or the formula (5). a(M^0).KM22〇).c(M2x).dAl2〇3 t X〇y) ^1\ where M1 may be Pb, Cu ' and/or any combination of the foregoing; one or more Monovalent elejnents, such as 1, Na, K, Rb, Cs, Au, Ag ' and / or any group of the above materials 200952225 *, can be one or more divalent elements (diva ent Elements, such as Be, Mg, Ca, Sr, Ba, Zn, Cd, Μη, and/or any combination of the foregoing, Μ may be one or more trivalent elements (trjvaient eiements), such as Sc, B, Ga , In, and/or any combination of the foregoing materials; M5 may be Si, Ge, Ti, Ζγ, Μη, V, Nb, Ta, W, Mo' and/or any combination of the foregoing; M6 may be Bi, Sn , Sb, Sc, Y, La, Ce,
Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb,
Lu，及/或前述材料之任意組合；x可為F、c卜Br、I， 及/或如述材料之任意組合；〇<a$2;〇$b22;0<c<2 ; O<d<8；0<e<4；0<f<3；0<g<8；0<h<2； 1<〇 $2; l$pS5; 1$χ$2;以及 i 〇Lu, and/or any combination of the foregoing; x may be F, c, Br, I, and/or any combination of materials as described; 〇 <a$2;〇$b22;0<c<2;O<d<8;0<e<4;0<f<3;0<g<8;0<h<2;1<〇$2;l$pS5;1$χ$2; and i 〇
a(M10).b(M22〇).c(M2X).4-a.b-c(M30).7(Al2〇3)-d(B2〇3)-e(G a2〇3).f(Si〇2).g(Ge〇2).h(M4xOy) ......(2) ❹ 2其中’ M可為Pb、Cu ’及/或前述材料之任意組合； M可為一個或多個-價元素，如Li、Na、K、Rb、Cs、 Au、Ag ’及/或前述材料之任意組合；M3可為一個或多個 ，如如、Mg、Ca、Sr、Ba、Zn、Cd、Μη，及/ 或别述材料之任意組合；M4可為Bi、Sn、sb、Sc、Y、La、 ^n、C:Pr、Nd、Pln、Sm、Eu、Gd、Tb，、H〇、玢、 m、Yb、Lu，及前述材料之任意組合；χ可為f、匸卜 二及前述材料之任意組合;〇<。4;〇%2;〇9 —-d<l ,〇<e<i ;〇<f<i ；0<g<i ;〇<h<2； 11 200952225 l£x$2; l$y$5;以及 4-a-b-c > 〇。 銅與鉛摻雜發光材料的製備例如為一基礎固離反應 _純一—。本發明可使用沒有任二口質；；純】 材(starting materials) ’例如鐵。任何能夠藉由加熱製程轉 換為氧化物的原材皆可用以形成富氧之燐光體(〇xygen dominated phosphors)。 製備的例子： 具有分子式(3)之發光材料的製備方法。 (3) ◎a(M10).b(M22〇).c(M2X).4-ab-c(M30).7(Al2〇3)-d(B2〇3)-e(G a2〇3).f(Si 〇2).g(Ge〇2).h(M4xOy) ......(2) ❹ 2 where 'M can be Pb, Cu' and/or any combination of the foregoing; M can be one or more a valence element such as Li, Na, K, Rb, Cs, Au, Ag 'and/or any combination of the foregoing; M3 may be one or more, such as, for example, Mg, Ca, Sr, Ba, Zn, Any combination of Cd, Μη, and/or other materials; M4 may be Bi, Sn, sb, Sc, Y, La, ^n, C: Pr, Nd, Pln, Sm, Eu, Gd, Tb, H 〇, 玢, m, Yb, Lu, and any combination of the foregoing; χ can be f, 二二二 and any combination of the foregoing materials; 〇 <. 4;〇%2;〇9——-d<l,〇<e<i;〇<f<i;0<g<i;〇<h<2; 11 200952225 l£x$2; l$ y$5; and 4-abc > 〇. The preparation of copper and lead doped luminescent materials is, for example, a basic solidification reaction _pure one. The present invention can be used without any two oral materials;; starting materials such as iron. Any material that can be converted to an oxide by a heating process can be used to form 〇xygen dominated phosphors. Example of preparation: A method of producing a luminescent material having the formula (3). (3) ◎
Cu0,〇2Sr3.98Al14〇25 : Eu 原材：CuO、SrC〇3、A1(〇H)3、卽2〇3，及/或前述材料 之任意組合。 氧化物(〇Xides)、氫氧化物(hydroxides)，及/或碳酸鹽 (carbonates)型態之原材可藉由少量的助焊劑(flux)，例如 h3bo3 等，並以化學___ ❹ ，合在-起。此混合物可棚礬㈣⑻聰―ewiWe)内進 行第「，段燒製約i小時，其係於溫度約為丨，2⑼。c的條 =下進行。在攪拌預燒製材料(pre_firedmaterials)之後接 行第—階&燒製約4小時，其係於減壓環境以及溫度 ς’-、1，45G C的條件下進行。之後，此材料可被擾摔、洗 心燥’以及綿選。此最終的發光材料之發級長約為 494奈米。 12 200952225 d j..a〇c 表1 :在激發波長約為400奈米的情況下，銅播雜之 Eu -活化铭酸鹽與未經銅摻雜之此2'活化減鹽的 表1 發光密度（％) ^摻雜化合物 '— Cu〇.〇2Sr3.98Ali4〇7s: Ευ 103.1 — 無銅化合物 St4A1140^ ： Eu 波長（奈米） 494 100 —. . --—— ^93 具有分子式(4)之發光材料的製備方法。 ❹ Pb〇_05 δΓ3.95Α1ΐ4〇25 : (斗) 原材：PbO、SrC03、Al2〇3、Eu2〇3，及/或前述材料 之任意組合。 純氧化物(oxides)、碳酸鹽(carb〇nates)等型態之原材， 或其他能夠熱分解為氧化物之組成物可藉由少量的助焊劑 (flux) ’例如h3bo3等，並以化學當量比例(st〇ichi〇metric proportions)混合在一起。此混合物可在明礬坩堝(alumina 咖ci㈣内進行第一階段燒製約i小時，其係於空氣中以 及溫度約為1，200 °C的條件下進行。在攪拌預燒製材料 (pre-fired materials)之後，接著進行第二階段燒製，其係於 空氣中以及溫度約為1，450。(：的條件下燒製約2小時，再 於減壓環境下燒製約2小時。之後，此材料可被攪拌、洗 條、乾燥，以及篩選。此最終的發光材料之發光波長約為 494.5奈米。 表2 .在激發波長約為4〇〇奈米的情況下，錯換雜之 Eu2+-活化鋁酸鹽與未經鉛摻雜之Eu2+_活化鋁酸鹽的比較。 13 200952225 表2 L 鉛摻雜化合物 無鉛化合物 05Sr3.95Ali4〇25 : Ell Sf4Al]4〇25 * Eu 發光密度（％) Ϊ01.4 100 波長（奈米） 494.5 493 表3 :在激發波長約為400奈米的情況下，一些能夠 被長波長紫外光及/或可見光激發的銅及/或錯摻雜之銘酸 鹽之光學特性，及其發光密度百分比的比較。 表3 組成 可能激發 範圍(奈米) 在激發波長為40C $米的情況下，與 杲摻雜銅/鉛之化 合物的發光密度比 較(％) 窄/$摻雜之化 微皮長波 未等雜銅 化备物的波長 波峰(奈米） Cu〇.5Sr3.5Al]4〇25 Eu 360 · 430 101.2 495 493 Cu〇.〇2Sr3,98Ali4〇25 Eu 360 - 430 103.1 494 493 P^0.0sSr^.95Al|4〇25 ： Ell 360-430 101.4 494.5 493 Cu〇.〇l &3.99Α1ΐ3.995ΐδί〇.〇〇5〇25 : Eu 360-430 103 494 492 Cu〇.〇l Sr3.395Ba〇.595Ali4〇25 ： Eu, Dy 360-430 100.8 494 493 Pb〇 〇5Sr3.95Ali3 95Ga〇,〇5〇25 ： Eu 360-430 101.5 494 494Cu0, 〇2Sr3.98Al14〇25 : Eu Raw material: CuO, SrC〇3, A1(〇H)3, 卽2〇3, and/or any combination of the foregoing materials. The oxide (Xides), hydroxides, and/or carbonates types of materials can be obtained by a small amount of flux, such as h3bo3, etc., and chemically ___ ❹ In-from. This mixture can be carried out in the shed (4) (8) Cong-ewiWe), the segment is burned for 1 hour, and the temperature is about 丨, 2 (9). The strip of c = is carried out. After stirring the pre-fired materials (pre_firedmaterials) The first-order & burn is restricted for 4 hours, which is carried out under the condition of decompression and temperature ς'-, 1,45G C. After that, the material can be disturbed, washed and dried. The final luminescent material has a length of about 494 nm. 12 200952225 d j..a〇c Table 1: Copper-doped Eu-activated acid salts and unexcited at an excitation wavelength of about 400 nm Table 2 of the 2' activation salt reduction of copper doping luminescence density (%) ^Doping compound '- Cu〇.〇2Sr3.98Ali4〇7s: Ευ 103.1 — copper-free compound St4A1140^ : Eu wavelength (nano) 494 100 —. . --—— ^93 Preparation method of luminescent material with molecular formula (4) ❹ Pb〇_05 δΓ3.95Α1ΐ4〇25 : (Dou) Raw material: PbO, SrC03, Al2〇3, Eu2〇3 And/or any combination of the foregoing materials: raw materials such as oxides, carb〇nates, etc., or other capable of thermal separation The composition of the oxide can be mixed together by a small amount of flux 'e.g., h3bo3, etc., and in stoichiometric proportions. This mixture can be carried out in alum (aluminum coffee ci (4)) The first stage of combustion is controlled for one hour, which is carried out in air and at a temperature of about 1,200 ° C. After stirring the pre-fired materials, the second stage of firing is performed. It is air-conditioned and has a temperature of about 1,450. It is burned for 2 hours under conditions of 2: and then burned under reduced pressure for 2 hours. After that, the material can be stirred, washed, dried, and The final luminescent material has an emission wavelength of about 494.5 nm. Table 2. In the case of an excitation wavelength of about 4 Å, the mis-doped Eu2+-activated aluminate is not doped with lead. Comparison of Eu2+_activated aluminate. 13 200952225 Table 2 L Lead-doped compound lead-free compound 05Sr3.95Ali4〇25 : Ell Sf4Al]4〇25 * Eu Luminous density (%) Ϊ01.4 100 wavelength (nano) 494.5 493 Table 3: At an excitation wavelength of approximately 400 nm Some of the more capable of being long wavelength ultraviolet light percentage, and / or visible light excitation of copper and / or optical properties of the doped dislocation-ming acid and salt, and the luminous density. Table 3 Composition Possible Excitation Range (Nano) Compared with the luminescence density of yttrium-doped copper/lead compounds at an excitation wavelength of 40 C $ m (%) Narrow/$ doped smear Wavelength peak of copper preparation (nano) Cu〇.5Sr3.5Al]4〇25 Eu 360 · 430 101.2 495 493 Cu〇.〇2Sr3,98Ali4〇25 Eu 360 - 430 103.1 494 493 P^0.0sSr^. 95Al|4〇25 : Ell 360-430 101.4 494.5 493 Cu〇.〇l &3.99Α1ΐ3.995ΐδί〇.〇〇5〇25 : Eu 360-430 103 494 492 Cu〇.〇l Sr3.395Ba〇.595Ali4 〇25 : Eu, Dy 360-430 100.8 494 493 Pb〇〇5Sr3.95Ali3 95Ga〇,〇5〇25 : Eu 360-430 101.5 494 494
a(MJ0) · b(M20) · c(A1203) · d(M32〇3) · e(M402) · f (M5xOy)……(5) 其中’ M1可為Pb、Cu，及/或前述材料之任意組合； Μ2 可為 Be、Mg、Ca、Sr、Ba、Zn、Cd、Μη，及/或前述 材料之任意組合；M3可為B、Ga、In，及/或前述材料之 任意組合；M4可為Si、Ge、Ti、Zr、Hf，及/或前述材料 之任意組合，Μ5 可為 Bi、Sn、Sb、Sc、γ、La、Ce、、a(MJ0) · b(M20) · c(A1203) · d(M32〇3) · e(M402) · f (M5xOy) (5) where ' M1 can be Pb, Cu, and/or the aforementioned materials Any combination; Μ2 may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Μη, and/or any combination of the foregoing; M3 may be B, Ga, In, and/or any combination of the foregoing; M4 may be Si, Ge, Ti, Zr, Hf, and/or any combination of the foregoing materials, and Μ5 may be Bi, Sn, Sb, Sc, γ, La, Ce,
Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu , 及/或前述材料之任意組合；0<aSl ;0<b$2;0<cs8 ; 14Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or any combination of the foregoing; O0<aSl;0<b$2;0<cs8; 14
200952225」。C ;以及 1 0 〇<d<l ； 0<e<l ；0<f<2； 製備的例早：' 具有分子式(6)之發光材料的製備方法。200952225". C; and 1 0 〇<d<l;0<e<l;0<f<2; Preparation Example: 'Preparation method of luminescent material having the formula (6).
Cu〇.〇5Sr〇 95Al! 9997SI0.0003O4 ： Eu 原材：CuO、SrC03、ΑΙΑ〗、Si〇2、Eu2〇3，及/或前 & 述材料之任意組合。 純氧化物(oxides)及/或碳酸鹽(carb〇nates)型態之原材 可藉由少量的助焊劑(flux) ’例如A1F3等，並以化學當量 比例(stoichiometric proportions)混合在一起。此混合物可在 明礬坩堝(almnina crucible)内進行燒製約3小時，其係於減 壓環境以及溫度約為1，250 °C的條件下進行。之後，此材 料可被攪拌、洗滌、乾燥，以及筛選。此最終的發光材料 之發光波長約為521.5奈米。 h表4 :在激發波長約為400奈米的情況下，銅摻雜之 Eu2 _活化鋁酸鹽與未經銅摻雜之£112+_活化鋁酸鹽的比較。 表4 銅摻雜化合物 無銅化合物 — y^0.05Sr〇t95AIi,QQg7Sin ομπΟλ : Eu SrAl204 : Eu 梦光密度（％、 106 100 奈米） 52L5 -- 519 具有分子式(7)之發光材料的製備方法。Cu〇.〇5Sr〇 95Al! 9997SI0.0003O4 : Eu Raw material: CuO, SrC03, ΑΙΑ〗, Si〇2, Eu2〇3, and/or any combination of the former & The raw materials of the oxides and/or carbs can be mixed together by a small amount of flux, such as A1F3, etc., in stoichiometric proportions. This mixture was calcined in alumna crucible for 3 hours, under reduced pressure and at a temperature of about 1,250 °C. This material can then be stirred, washed, dried, and screened. The final luminescent material has an emission wavelength of about 521.5 nm. h Table 4: Comparison of copper-doped Eu2_activated aluminate with copper-doped £112+_activated aluminate at an excitation wavelength of approximately 400 nm. Table 4 Copper-doped compound copper-free compound - y^0.05Sr〇t95AIi, QQg7Sin ομπΟλ : Eu SrAl204 : Eu Dream light density (%, 106 100 nm) 52L5 - 519 Preparation method of luminescent material having molecular formula (7) .
Cu〇 12BaMgi.88Al16〇27 : Eu ......(7) 原材：CuO、MgO、BaC03、A1(0H)3'Eu203，及/或 15 200952225 前述材料之任意組合。 純氧化物(〇xides)、氫氧化物(hydroxides)，及/或碳酸 鹽(carbonates)型癌之原材可藉由少量的助焊劑(flux)，例如 3等並以化子_量比例(st〇ichi〇metric pr〇p〇rti〇ns)混合 在一起。此混合物可在明礬坩堝(alumina crueible)内進行燒 製約2小時，其係於減壓環境以及溫度約為L420 〇c的條 件下進行。之後，此材料可被攪拌、洗滌、乾燥，以及篩 選。此最終的發光材料之發光波長約為452奈米。 a表5 :在激發波長約為400奈米的情況下，鉛摻雜之 Eu2+-活化鋁酸鹽與未經鉛摻雜之如2+_活化銘酸鹽的比較。 表5 銅摻雜 1E"合物 無銅化合物 — - Cu〇.i2BaMg, rrA1„；0., · F„ 發光密度 101 100 波長（奈米） 452 450 具有分子式(8)之發光材料的製備方法。 pb〇.iSr〇.9Al2〇4 ： Eu ......⑻ 原材：PbO、SrC03、Al(OH)3、Eu203，及/或前述材 料之任意組合。 純氧化物(oxides)、氫氧化物(hydroxides)，及/或碳酸 鹽(carbonates)等型態之原材可藉由少量的助焊劑(flux)，例 如 H3BO3 等’並以化學當量比例(stoichiometric proportions) 混合在一起。此混合物可在明濛掛瑪(alumina crucible)内進 行第一階段燒製約2小時’其係於空氣中以及溫度約為Cu〇 12BaMgi.88Al16〇27 : Eu (7) Raw material: CuO, MgO, BaC03, A1(0H)3'Eu203, and/or 15 200952225 Any combination of the foregoing materials. The raw materials of pure oxide (〇xides), hydroxides, and/or carbonates type cancers can be reduced by a small amount of flux, for example, 3, etc. St〇ichi〇metric pr〇p〇rti〇ns) mixed together. This mixture can be calcined in an alumina crueible for 2 hours under reduced pressure and at a temperature of about L420 〇c. This material can then be stirred, washed, dried, and sieved. The final luminescent material has an emission wavelength of about 452 nm. a Table 5: Comparison of lead-doped Eu2+-activated aluminate with lead-doped 2+-activated acid salt at an excitation wavelength of about 400 nm. Table 5 Copper doped 1E" compound copper-free compound - Cu〇.i2BaMg, rrA1„; 0., · F„ luminescent density 101 100 wavelength (nano) 452 450 Preparation method of luminescent material having molecular formula (8) . pb〇.iSr〇.9Al2〇4 : Eu (8) Raw material: PbO, SrC03, Al(OH)3, Eu203, and/or any combination of the foregoing materials. Raw materials such as oxides, hydroxides, and/or carbonates can be chemically equivalent (stoichiometric) with a small amount of flux, such as H3BO3. Proportions) mixed together. This mixture can be subjected to the first stage of combustion for 2 hours in the alumina crucible. It is in the air and the temperature is about
200952225t.JOC i，ooo 〇c祕件下進行。在擾拌預燒製材料(pre_fired materials)之後，接著進行第二階段燒製，其係於空氣中以 及溫度約為1，420。(：的條件下燒製約丨小時，再於減壓環 境下燒製約2小時。之後’此材料可錢拌、洗滌、乾燥， 以及篩選。此最終的發光材料之發光波長約為S21奈米。 2+表6 .在激發波長約為4〇〇奈米的情況下，錯推雜之200952225t.JOC i,ooo 〇c secrets. After the pre-fired materials were scrambled, a second stage of firing followed by air and a temperature of about 1,420 was followed. (: Under the condition of burning, the temperature is limited to 丨 hours, and then burned under reduced pressure for 2 hours. After that, the material can be mixed, washed, dried, and screened. The final luminescent material has an emission wavelength of about S21 Nai. m. 2+ Table 6. In the case of an excitation wavelength of about 4 〇〇 nanometer, misplaced
Eu -活化銘酸鹽與未經錯摻雜之Eu2+活化銘酸鹽的比較。 表6 --- 錯摻雜化合物 無船化合物 發光密度（％) ij：(奈米） 1 ^O.lSlhoALCXi · F.11 102-- 521 - SrAl2〇4 : Eu ϊόδ 519 — 一_ 一 — 關於銅及/或鉛摻雜之鋁酸鹽之結果係列於表7中。 表7 :在激發波長約為4〇〇奈米的情況下，一些能夠 被長波長紫外光及/或可見光激發的銅及/或鉛摻雜之鋁酸 鹽之光學特性，及其發光密度百分比的比較。 17 200952225 表7 組成 可能激f 米） 在激發4长马4υυ 奪米的情況下，與 菜摻雜銅/錯之化 合物的發光密度比 較(％) 枣'船掺雜之化 拿龄皮長波 參摻雜銅/錯 1 纖1 Cu〇 〇5Sr〇.9sAli.QQ<)7Si〇.〇〇〇3〇4 · Eu 360-440 106 521.5 5Ϊ9 cuo.2Mgo.7995Lio.0005All.9Gao.104 :Eu, Dy 360-440 101.2 482 480 Pb〇.iSr〇.9Al2〇4 ： Eu 360-440 102 521 519 Cu〇.〇5BaMgi.95Ali6〇27* Eu, Mn 360 - 400 100.5 451,515 450, 515 Cu〇.i2BaMgi.88Ali6〇27 · Eu 360-400 101 452 450 Cu〇.〇iBaMfi〇.99Ali〇〇i7 : Eu 360 - 400 102.5 451 449 ' Pbo.1BaMgo.9Al95Gao.5O17 : Eu, Dy 360-400 100.8 448 450 pb〇.〇gSr〇 «02Α12〇4 ： Eu, Dy 360 - 440 102.4 521 519 Pb〇.2Sr〇 gAl2〇4: Mn 360-440 100.8 658 655 ^^0.06Sr〇 94AI2O4 : Eu 360-440 102.3 521 519 Cu0.05Ba〇94Pb〇>〇6Mg〇,95Ali〇Oj7 ：Eu 360-440 100.4 451 449 Pb〇.3Ba〇.7Cu〇.1Mgi.9Ali6〇27 ：Eu 360-400 100.8 452 450 Pb〇.3Ba〇.7Cu〇,1Mg1.9Al16〇27 :Eu, Mn 360-400 100.4 452, 515 450, 515 鉛及/或銅摻雜之矽酸鹽具有分子式(9)。 a(M10).b(M20)-c(M3X).d(M320).e(M4203)-f(M500p).g(Si02)· h(M6xOy) ... (9)Comparison of Eu-activated acid salt with Eu2+ activated acid salt without misdoping. Table 6 --- Mis-doped compound ship-free compound Luminous density (%) ij: (nano) 1 ^O.lSlhoALCXi · F.11 102-- 521 - SrAl2〇4 : Eu ϊόδ 519 — one _ one - about The results for copper and/or lead doped aluminates are summarized in Table 7. Table 7: Optical properties of copper and/or lead doped aluminates capable of being excited by long wavelength ultraviolet and/or visible light at an excitation wavelength of about 4 nanometers, and the percent of their luminescent density Comparison. 17 200952225 Table 7 Composition may be excited f m) In the case of exciting 4 long horses 4υυ, the luminous density of the compound doped with copper/wrong compound (%) Doped copper/wrong 1 fiber 1 Cu〇〇5Sr〇.9sAli.QQ<)7Si〇.〇〇〇3〇4 · Eu 360-440 106 521.5 5Ϊ9 cuo.2Mgo.7995Lio.0005All.9Gao.104 :Eu, Dy 360-440 101.2 482 480 Pb〇.iSr〇.9Al2〇4 : Eu 360-440 102 521 519 Cu〇.〇5BaMgi.95Ali6〇27* Eu, Mn 360 - 400 100.5 451,515 450, 515 Cu〇.i2BaMgi. 88Ali6〇27 · Eu 360-400 101 452 450 Cu〇.〇iBaMfi〇.99Ali〇〇i7 : Eu 360 - 400 102.5 451 449 ' Pbo.1BaMgo.9Al95Gao.5O17 : Eu, Dy 360-400 100.8 448 450 pb〇 .〇gSr〇«02Α12〇4 : Eu, Dy 360 - 440 102.4 521 519 Pb〇.2Sr〇gAl2〇4: Mn 360-440 100.8 658 655 ^^0.06Sr〇94AI2O4 : Eu 360-440 102.3 521 519 Cu0. 05Ba〇94Pb〇>〇6Mg〇, 95Ali〇Oj7:Eu 360-440 100.4 451 449 Pb〇.3Ba〇.7Cu〇.1Mgi.9Ali6〇27:Eu 360-400 100.8 452 450 Pb〇.3Ba〇.7Cu 〇, 1Mg1.9Al16〇27 :Eu, Mn 360-400 100.4 452, 515 450, 515 Lead and/or copper doped tellurates have the formula (9). a(M10).b(M20)-c(M3X).d(M320).e(M4203)-f(M500p).g(Si02)· h(M6xOy) ... (9)
其中，Μ可為Pb、Cu，及/或前述材料之任意組合 可為 Be、Mg、Ca、Sr、Ba、Zn、Cd、Μη，及/或前 材料之任意組合·，M3可為Li、Na、K、Rb、Cs、Au、Ai 前述材料之㈣組合；M4可為Ab Ga、In，及/或 ^材料之任意組合；Μ5可為Ge、V、Nb、Ta、W、Mo % Hf’及/或前述材料之任意組合；M6可為Bi、Sl 、c、γ、La、Ce、Pr、Nd、pm、Sm、扯、㈤刊 uy、Ho、Er、Tm、VK T 、， b、Lu ’及/或刚述材料之任意組告 18 200952225“doc X可為；P'ChBr]’及前述材料之任意組合；〇<d 〇<b<8,0<c<4；0<d<2;0<e<2；〇<f<2；〇<g U〇;〇<hy ; lSp^5; 以及 by S5。 —- 製備的你丨子： 具有分子式(10)之發光材料的製備方法。 (10) ❹ Cu〇 〇5Sr17Ca〇.25Si〇4 : Eu 原材· CuO、SrC03 CaC〇3、Si〇2、Eu203，及/或前 述材料之任意組合。 純氧化物(oxides)及/或碳酸鹽(carb〇nates)型態之原材 可藉由少量的助焊劑(flux)，例如NHqCi等，並以化學當 量比例(stoichiometric proportions)混合在一起。此混合物可 在明礬坩禍(alumina crucible)内進行燒製約i小時，其係於Wherein, Μ may be Pb, Cu, and/or any combination of the foregoing materials may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Μη, and/or any combination of pre-materials, and M3 may be Li, Na, K, Rb, Cs, Au, Ai (4) combination of the foregoing materials; M4 may be any combination of Ab Ga, In, and / or ^ materials; Μ 5 may be Ge, V, Nb, Ta, W, Mo % Hf 'and / or any combination of the foregoing materials; M6 can be Bi, Sl, c, γ, La, Ce, Pr, Nd, pm, Sm, rip, (5) publication uy, Ho, Er, Tm, VK T,, b Any combination of Lu' and/or just described materials 18 200952225 "doc X may be; P'ChBr"' and any combination of the foregoing; 〇 <d 〇 <b<8,0<c<4;0<d<2;0<e<2;〇<f<2;〇<gU〇;〇<hy;lSp^5; and by S5.-- Preparation of your scorpion: having a molecular formula ( 10) A method for preparing a luminescent material. (10) ❹ Cu〇〇5Sr17Ca〇.25Si〇4 : Eu raw material · CuO, SrC03 CaC〇3, Si〇2, Eu203, and/or any combination of the foregoing materials. The oxides and/or carb〇nates types can be made with a small amount of flux ( Flux, such as NHqCi, etc., mixed together in stoichiometric proportions. This mixture can be burned for 1 hour in an alumina crucible, which is tied to
鈍氣環境（如&或惰性氣體）以及溫度約為1200 的 條件下進行。接著’攪拌此材料(pre_fired materials)。之後， 接著進行燒製約2小時，其係於稍微減壓之環境以及温度 約為1，200。0的條件下進行。之後，此材料可被攪拌、洗 滌、乾燥，以及篩選。此最終的發光材料之發光波長約為 592奈米。 19 200952225 表8 銅摻雜化合物 無銅化合物 Cll〇 osSr^ 7^3〇 ^sSl〇4 · Eu Sri.7Ca〇^Si〇4 ： Eu 發光密度（％丨 104 100 波長（奈米） 592 588 具有分子式(11)之發光材料的製備方法。It is carried out in an inert atmosphere (such as & or inert gas) and at a temperature of approximately 1200. Then 'pre_fired materials'. Thereafter, the firing was followed for 2 hours, which was carried out under conditions of a slight decompression and a temperature of about 1,200. This material can then be stirred, washed, dried, and screened. The final luminescent material has an emission wavelength of about 592 nm. 19 200952225 Table 8 Copper-doped compounds Copper-free compounds Cll〇osSr^ 7^3〇^sSl〇4 · Eu Sri.7Ca〇^Si〇4 : Eu Luminous density (%丨104 100 wavelength (nano) 592 588 A method for preparing a luminescent material of the formula (11).
Cu 〇 2Ba 2Zn 〇.2Mg 〇.6Si 2〇7 · Eu ......(11)Cu 〇 2Ba 2Zn 〇.2Mg 〇.6Si 2〇7 · Eu ......(11)
原材：CuO、BaC〇3、ZnO、MgO、Si〇2、Eu2〇3，及 /或前述材料之任意組合。Raw materials: CuO, BaC〇3, ZnO, MgO, Si〇2, Eu2〇3, and/or any combination of the foregoing.
高純度氧化物(oxides)及/或碳酸鹽(carbonates)型態之 原材可藉由少量的助焊劑(flux)，例如Nh4C1等，並以化 學當量比例(stoichiometric proportions)混合在一起。此混合 物可在明礬·掛塌(alumina crucible)内進行第一階段燒製約 2小時’其係於減壓環境以及溫度約為1，1〇〇。匚的條件下 進行。接者’擾拌此材料(pre-fired materials)。之後’接著 ，行燒製約2小時，其係於減壓之環境以及溫度約為1，235 、c的條件下進行。之後，此材料可被攪拌、洗滌、乾燥， 以及篩選。此最終的發光材料之發光波長約為467奈米。 2+表9 :在激發波長約為4〇〇奈米的情況下，銅摻雜之Raw materials of high purity oxides and/or carbonates may be mixed together by a small amount of flux, such as Nh4C1, etc., in stoichiometric proportions. This mixture can be subjected to a first stage of burning in an alumina crucible for 2 hours. It is in a reduced pressure environment and has a temperature of about 1,1 Torr. Under the conditions of 匚. The picker 'pre-fired materials'. Thereafter, the firing was carried out for 2 hours, which was carried out under reduced pressure and at a temperature of about 1,235 and c. This material can then be stirred, washed, dried, and screened. The final luminescent material has an emission wavelength of about 467 nm. 2+ Table 9: Copper doping in the case of an excitation wavelength of about 4 nm
Eu2'活化矽酸鹽與未經銅摻雜之Eu2+_活化矽酸鹽的比較。 表9Comparison of Eu2' activated citrate with Eu2+-activated citrate without copper doping. Table 9
20 200952225idoc 具有分子式(12)之發光材料的製備方法。20 200952225idoc A method for preparing a luminescent material having the formula (12).
Pb〇 iBa〇.95Sr0.95Si〇.998Ge〇.〇〇2〇4: Eu ......(12) 原材.PbO、SrC〇3、BaC〇3、Si〇2、Ge〇2、EU2O3，及/ 或前述材料之任意組合。Pb〇iBa〇.95Sr0.95Si〇.998Ge〇.〇〇2〇4: Eu ......(12) Raw materials. PbO, SrC〇3, BaC〇3, Si〇2, Ge〇2 EU2O3, and / or any combination of the foregoing.
純氧化物(oxides)及/或碳酸鹽(carbonates)等型態之原 材可藉由少量的助焊劑(flux)，例如NH4C1等，並以化學 當量比例(stoichiometric proportions)混合在一起。此混合物 可在明馨掛竭(alumina crucible)内進行第一階段燒製約1 小時’其係於空氣中以及溫度約為1,000 °C的條件下進 行。在授拌預燒製材料(pre-firedmaterials)之後，接著進行 第二階段燒製，其係於空氣中以及溫度約為1,220。(：的條 件下燒製約4小時，再於減壓環境下燒製約2小時。之後， 此材料可被攪拌、洗滌、乾燥，以及篩選。此最終的發光 村料之發光波長約為527奈米。 表10 :在激發波長約為400奈米的情況下，鉛摻雜之 活化矽酸鹽與未經鉛摻雜之Eu2+-活化矽酸鹽的比較。 鉛摻雜化合物 無鉛化合物 Pbo.iBao.^Sro.^Sio.^Geo.ot^CU: Eu BaSrSi〇4 ： Eu 5 度（％) 101.3 100 奈米） 527 525 具有分子式(13)之發光材料的製備方法Raw materials such as oxides and/or carbonates may be mixed together by a small amount of flux, such as NH4C1, etc., in stoichiometric proportions. This mixture can be subjected to a first stage of combustion for 1 hour in an alumina crucible, which is carried out in air and at a temperature of about 1,000 °C. After the pre-fired materials were fed, a second stage of firing was carried out which was tied to air and at a temperature of about 1,220. (: The condition of burning under the condition of 4 hours, and then burning under reduced pressure for 2 hours. After that, the material can be stirred, washed, dried, and screened. The final luminous wavelength of the luminescent material is about 527. Nanometer. Table 10: Comparison of lead-doped activated citrate with lead-doped Eu2+-activated citrate at an excitation wavelength of approximately 400 nm. Lead-doped compound lead-free compound Pbo. iBao.^Sro.^Sio.^Geo.ot^CU: Eu BaSrSi〇4 : Eu 5 degrees (%) 101.3 100 nm) 527 525 Preparation method of luminescent material having molecular formula (13)
Pb0.25Sr3.75Si3O8Cl4 : Eu ......(13) 21 200952225 . 原材：PbO、SrC03、SrCl2、Si02、Eu2〇3，及前述材 料之任意組合。 氧化物（oxides)、氣化物（chi〇rides)，及/或碳酸鹽 (carbonates)等型態之原材可藉由少量的助焊劑(flux)，例如 nh4ci 等’並以化學當量比例（st0jchi0metric pr〇p〇rtions) 混合在一起。此混合物可在明礬坩堝(alumina crucible)内進 行第一階段燒製約2小時，其係於空氣中以及溫度約為 ι，ιοο。(：的條件下進行。在攪拌預燒製材料(pre_fired materials)之後，接著進行第二階段燒製，其係於空氣中以 ❹ 及溫度約為1，220 C的條件下燒製約4小時，再於減壓環 境下燒製約1小時。之後，此材料可被攪拌、洗滌、乾燥， 以及篩選。此最終的發光材料之發光波長約為492奈米。 表11 :在激發波長約為400奈米的情況下，鉛摻雜之Pb0.25Sr3.75Si3O8Cl4 : Eu ......(13) 21 200952225 . Raw materials: PbO, SrC03, SrCl2, SiO2, Eu2〇3, and any combination of the foregoing materials. Materials such as oxides, chi〇rides, and/or carbonates may be obtained by a small amount of flux, such as nh4ci, etc., and in stoichiometric ratios (st0jchi0metric Pr〇p〇rtions) mixed together. This mixture can be subjected to a first stage of burning in an alumina crucible for 2 hours, which is tied to air and at a temperature of about ι, ιοο. After the pre-fired materials were stirred, the second stage of firing was carried out, which was fired in the air at a temperature of about 1,220 C for 4 hours. Then, it was burned for 1 hour under reduced pressure. After that, the material was stirred, washed, dried, and screened. The final luminescent material had an emission wavelength of about 492 nm. Table 11: The excitation wavelength was about In the case of 400 nm, lead doping
Eu -活化氣碎酸鹽(chlorosilicate)與未經錯摻雜之Eu2+-活 化氣矽酸鹽的比較。 表11 ίό捧雜化合物 無鉛化合物 Pb〇.25^r3.75S>i^ORCL : F.ii Sr4Sl3〇gCl4 1 Eu 發光密度（％) 100.6 100 波長（奈米） 492 490 關於銅及/或鉛摻雜之矽酸鹽之結果係列於表12中。 表12 :在激發波長約為400奈米的情況下，一些能夠 被長波長紫外光及/或可見光激發的銅及/或鉛摻雜之稀土 活化矽酸鹽(rare earth activated silicates)之光學特性，及其 發光密度百分比的比較。 22 200952225^ 表12 組成 可能激營 範圍（萘 米） 在激發婆長叁乂 奈米的情況>下，與 ϊ摻雜銅/鉛|化 合私岛#光密虔比 m%) imi 萇 >是毒(奈米f 未睁雜銅/鉛之 化备叔6¾或吴 波峰(奈米） Pb〇j[Ba〇.95Sr〇.95Si〇.998G®0.002〇4 ;Eu 360-470 101.3 527 525 Cu〇.〇2(Ba,SrsCasZn)i.98Si〇4 :Eu 360 - 500 108.2 565 560 Ou〇 〇5Sri 7Ca〇.25Si〇4 Eu 360-470 104 592 588 Cu〇.〇5Li〇.〇〇2Sri,5Ba〇.44gSi〇4 :Gd, Eu 360-470 102.5 ------___ 557 555 Cu〇.2i>r2Zn〇.2Mg〇.6Sl2U7 : liu 360-450 101.5 467~~ 465 ^-^0.02^a2.8^r〇.2Mg〇.98!Si2〇8 :Eu, Mn 360-420 100.8 440, 660 438, 660 Pb〇.25Sr3.75Si3〇gCl4 : Eu 360-470 100.6 492 - 490 Cu〇.2Ba2.2Sr〇.75Pb〇.〇5Zn〇.8Si2〇8 :Eu 360-430 100.8 448 445 Cu〇.2Ba3Mg〇.8Sii.99Ge〇01〇8 :Eu Cu〇.5Zn〇.5Ba2Ge〇 2Sii R〇7 ： Eu 360-430 360-420 101 1023 ' 444 435 440 ^-^1〇 ^^.213335>12〇8 ： Eu. Mn PbaHtJarM Zn〇.01Si〇.99Zr0.01〇4 :Eu 360-430 360 - 500 103 101 438, 670 512 433 435,670 510 Uu〇^Ba5(Ja2.8iSi4〇16 ； Eu 360-470 101.8 ------- 491 錯及/或銅摻雜之銻酸鹽具有分子式(14)。Comparison of Eu-activated chlorosilicate with undoped Eu2+-activated gas phthalate. Table 11 Lead-free compound Pb〇.25^r3.75S>i^ORCL : F.ii Sr4Sl3〇gCl4 1 Eu Luminescence density (%) 100.6 100 Wavelength (nano) 492 490 About copper and/or lead doping The results of the heterophosphonates are shown in Table 12. Table 12: Optical properties of rare earth activated silicates doped with copper and/or lead excited by long wavelength ultraviolet and/or visible light at an excitation wavelength of approximately 400 nm And a comparison of the percentage of its luminous density. 22 200952225^ Table 12 The composition of the possible camp range (naphthalene) in the case of invigorating the mother-in-law, under the yt-doping copper/lead | compounding the private island #光密虔比m%) imi 苌> Is poisonous (nano f undoped copper/lead chemical preparation uncle 63⁄4 or Wu Bofeng (nano) Pb〇j[Ba〇.95Sr〇.95Si〇.998G®0.002〇4; Eu 360-470 101.3 527 525 Cu〇.〇2(Ba,SrsCasZn)i.98Si〇4 :Eu 360 - 500 108.2 565 560 Ou〇〇5Sri 7Ca〇.25Si〇4 Eu 360-470 104 592 588 Cu〇.〇5Li〇.〇〇 2Sri,5Ba〇.44gSi〇4 :Gd, Eu 360-470 102.5 ------___ 557 555 Cu〇.2i>r2Zn〇.2Mg〇.6Sl2U7 : liu 360-450 101.5 467~~ 465 ^-^ 0.02^a2.8^r〇.2Mg〇.98!Si2〇8:Eu, Mn 360-420 100.8 440, 660 438, 660 Pb〇.25Sr3.75Si3〇gCl4 : Eu 360-470 100.6 492 - 490 Cu〇 .2Ba2.2Sr〇.75Pb〇.〇5Zn〇.8Si2〇8:Eu 360-430 100.8 448 445 Cu〇.2Ba3Mg〇.8Sii.99Ge〇01〇8:Eu Cu〇.5Zn〇.5Ba2Ge〇2Sii R〇 7 : Eu 360-430 360-420 101 1023 ' 444 435 440 ^-^1〇^^.213335>12〇8 : Eu. Mn PbaHtJarM Zn〇.01Si〇.99Zr0.01〇4 :Eu 360-430 360 - 500 103 101 438, 670 512 433 435,670 510 Uu〇^Ba5(Ja2.8iSi4〇16 ; Eu 360-470 101.8 ------- 491 Wrong and/or copper doped tellurate has a molecular formula ( 14).
❹ a(M^) . b(M22〇) . C(M，X) . ^μ3〇) ί(Μ XUy) ......(14) M2可t中可為Pb、CU，及/或前述材料之任意組合； Μ 可為 U、Na、K、Rb、Cs、Au 任意組合;為Be、Mg、Ca、二及’或二斗之 Β"；ηΖη； Cd； ^ 5 Pr、Sm、Eu、Tk τλ m « 1 Sn、Sc、Y、La、 x可為F' Cl、Bl·、Ty及+/或前述材料之任意組合； 2;〇<b<2 α ’ 迷材料之任意組合； ，〇化4;〇<心;〇…8;0 犯 2;1 23 200952225」 ;以及 1 Sy <5。 製備的例早： 具有分子式(15)之發光材料的製備方法。❹ a(M^) . b(M22〇) . C(M,X) . ^μ3〇) ί(Μ XUy) ......(14) M2 can be Pb, CU, and / Or any combination of the foregoing materials; Μ may be any combination of U, Na, K, Rb, Cs, Au; Be, Mg, Ca, two and 'or two hoppers'; ηΖη; Cd; ^ 5 Pr, Sm , Eu, Tk τλ m « 1 Sn, Sc, Y, La, x may be F' Cl, B1, Ty, and/or any combination of the foregoing materials; 2; 〇 <b<2 α ' Any combination; , 〇 4; 〇 <heart; 〇 ... 8; 0 guilty 2; 1 23 200952225"; and 1 Sy < Preparation Example: A method for preparing a luminescent material having the formula (15).
Cu0_2Mg 17Li 0_2Sb2O7 : Μη ......(15) 原材：CuO、MgO、Li20、Sb205、MnC03，及/或前 述材料之任意組合。Cu0_2Mg 17Li 0_2Sb2O7 : Μη (15) Raw material: CuO, MgO, Li20, Sb205, MnC03, and/or any combination of the foregoing materials.
氧化物（oxides)型態之原材可藉由少量的助焊劑 (UUx) ’ 並以化學當量比例(stoichiometric proportions)混合 在起。此混合物可在明礬掛竭(alumina crucible)内進行第 =階段燒製約2小時，其係於溫度約為985。(：的條件下進 Y。在預燒製之後，可攪拌該預燒製之材料。接著進行第 厂階段。燒製約8小時，其係於含氧大氣環境以及溫度約為 °C的條件下進行。之後，此材料可被攪拌、洗滌、 j ’以及筛選。此最終的發光材料之發光波長約為626The oxides type of the material can be mixed by a small amount of flux (UUx)' and in stoichiometric proportions. This mixture can be subjected to the first stage of combustion for 2 hours in an alumina crucible, which is at a temperature of about 985. Under the condition of (: Y), after pre-firing, the pre-fired material can be stirred. Then the first stage is carried out. The burning is restricted for 8 hours, which is in an oxygen-containing atmosphere and a temperature of about °C. This is done afterwards. This material can be stirred, washed, j' and screened. The final luminescent material has an emission wavelength of about 626.
録酸航下，鋼榜雜之 表13Under the record of acid, the list of steel is shown in Table 13
具有分子式(16)之發光材料的製備方法 24 200952225土Method for preparing luminescent material having molecular formula (16) 24 200952225
Pb〇.〇〇6Ca〇-6Sr〇.394Sb2〇6 ......(16) 原材：Pbo、CaC〇3、SrC〇3、Sb2〇5，及/或前述材料 之任意組合。 氧化物(oxides)及/或碳酸鹽(carb〇nates)型態之原材可 藉由少量的助焊劑(flux)，並以化學當量比例(st〇ichi〇metric proportions)混合在一起。此混合物可在明礬坩場⑼㈣⑽ ❿ crucible)内進行第一階段燒製約2小時，其係於溫度約為 975 °C的條件下進行。在預燒製之後，可攪拌該預燒製之 材料。接著進行第二階段燒製，其係於空氣中以及溫度約 為1，175 °C的條件下燒製約4小時，再於含氧大氣環境下 燒製約4小時。之後，此材料可被攪拌、洗滌、乾燥，以 及篩選。此最終的發光材料之發光波長約為637奈米。 表14 :在激發波長約為4〇〇奈米的情況下，錯摻雜之 銻酸鹽與未經鉛摻雜之銻酸鹽的比較。 表14 鉛捧雜化合物 無鉛化合物 ~~--- Pfe〇.o〇6Ca〇.6Sr〇.394Sb2Oft Ca〇.6Sr〇4Sb,0, '~~~ 發光密度 102 100 --~~ 夜長（奈米） 637 638 ~ --- 關於銅及/或鉛摻雜之銻酸鹽之結果係列於表15中。 表15 :在激發波長約為400奈米的情況下，—些能夠 被長波長紫外光及/或可見光激發的銅及/或鉛摻雜之錄酸 鹽之光學特性’及其發光密度百分比的比較。 25 200952225 表15 組成 f能激發 範圍(奈米) 比鮫(％) 銅/鉛摻雜之 也合备的波 f)波峰(奈 _ 1 未摻雜鋼/鉛 之化合物的 $長波奈 米） Pb〇.2Mg〇.〇〇2Cai.7卯Sb2〇6F2: Μη 360-400 102 645 649 ~~~ Cu〇.15Cai.845Sr〇.〇〇5Sbi.998Si〇.〇〇2〇7 ：Μη 360 - 400 101.5 660 658 Cu〇2Mgi,7Li〇 2Sb2〇7 * Μη 360-400 101.8 652 650 ^OJpbo.o 1 Ga〇.79iSb 1 98Nb〇.〇2〇6 :Mn 360-400 98.5 658 658 Cu〇〇2Cai.99Sbi 9995V0 0005O7: Mn 360 - 400 100.5 660 657 Pb〇 OOfiCflQ 6Sr〇.394Sb2〇6 360-400 102 637 638 CU002Ca09Sr0.5Ba0.4Mg0 1 RSb2〇7 360-400 102.5 649 645 PWl98Mg〇.〇〇4Cai 7gsSb2〇6F2 360-400 101.8 ^28 630Pb〇.〇〇6Ca〇-6Sr〇.394Sb2〇6 (16) Raw material: Pbo, CaC〇3, SrC〇3, Sb2〇5, and/or any combination of the foregoing materials. The oxides and/or carb〇nates types can be mixed together by a small amount of flux and in stoichiometric proportions. This mixture can be subjected to the first stage of combustion for 2 hours in the open field (9) (4) (10) ❿ crucible, which is carried out at a temperature of about 975 °C. The pre-fired material can be agitated after pre-firing. Next, the second stage of firing was carried out in air and at a temperature of about 1,175 ° C for 4 hours, and then in an oxygen-containing atmosphere for 4 hours. This material can then be stirred, washed, dried, and screened. The final luminescent material has an emission wavelength of about 637 nm. Table 14: Comparison of misdoped citrate with lead-doped citrate at an excitation wavelength of about 4 Å. Table 14 lead-free compound lead-free compound ~~--- Pfe〇.o〇6Ca〇.6Sr〇.394Sb2Oft Ca〇.6Sr〇4Sb,0, '~~~ luminous density 102 100 --~~ night long (nano 637 638 ~ --- The results of copper and / or lead doped tellurite are shown in Table 15. Table 15: Optical properties of copper and/or lead doped acid salts capable of being excited by long-wavelength ultraviolet and/or visible light at a wavelength of about 400 nm, and their percentage of luminescent density Comparison. 25 200952225 Table 15 Composition f excitation range (nano) ratio 鲛 (%) Copper/lead doping also prepared wave f) wave peak (Nai-1 undoped steel/lead compound of long-wave nano) Pb〇.2Mg〇.〇〇2Cai.7卯Sb2〇6F2: Μη 360-400 102 645 649 ~~~ Cu〇.15Cai.845Sr〇.〇〇5Sbi.998Si〇.〇〇2〇7 :Μη 360 - 400 101.5 660 658 Cu〇2Mgi,7Li〇2Sb2〇7*Μη 360-400 101.8 652 650 ^OJpbo.o 1 Ga〇.79iSb 1 98Nb〇.〇2〇6 :Mn 360-400 98.5 658 658 Cu〇〇2Cai .99Sbi 9995V0 0005O7: Mn 360 - 400 100.5 660 657 Pb〇OOfiCflQ 6Sr〇.394Sb2〇6 360-400 102 637 638 CU002Ca09Sr0.5Ba0.4Mg0 1 RSb2〇7 360-400 102.5 649 645 PWl98Mg〇.〇〇4Cai 7gsSb2〇 6F2 360-400 101.8 ^28 630
錯及/或銅摻雜之鍺酸鹽，及/或錄酸鹽_石夕酸鹽具有分 子式(17)。 a(M10) b(M220)-c(M2X) dGe02 e(M30).f(M4203) g(M500 )·The wrong and/or copper-doped citrate, and/or the acid salt, has a molecular formula (17). a(M10) b(M220)-c(M2X) dGe02 e(M30).f(M4203) g(M500 )·
h(M6x〇y) 〇 P ··.·..(Π) 其中，M1可為Pb、Cu，及/或前述材料之任意組合； ❹ 任意可^1. ^、K、灿、&、Μ、&，及/或前述材料之 …M 可為 Be、Mg、Ca、Sr、Ba、Zn、cd，〜 或刖述材料之任意組合；Μ4可為Sc、y、b、a1h(M6x〇y) 〇P ····..(Π) where M1 may be Pb, Cu, and/or any combination of the foregoing materials; ❹ any ^1. ^, K, 灿, & Μ, &, and/or the material M of the foregoing may be any combination of Be, Mg, Ca, Sr, Ba, Zn, cd, ~ or descriptive materials; Μ4 may be Sc, y, b, a1
In，及/或前述材料之任意組合；μ5 & V、Nh、τ τ J 句 Μ、Γι、Zr、Μη、 為Bi、S ^、Μ°’及/歧料料之任意組合；Μ6可 組合；X可為F、C1、Br、：E，及之任意 ~f-14 ； °^g<10 ； 0<h<2 ； 1 <0<2 . e^14j0 ~~〇S2 , 1 <p<5 ； i < 26 200952225„.doc Χ$2 ;以及 1 $5 〇 製備的例子： 具有分子式(18)之發光材料的製備方法。 (18)In, and / or any combination of the foregoing materials; μ5 & V, Nh, τ τ J sentence Γ, Γι, Zr, Μη, is Bi, S ^, Μ ° ' and / any combination of materials; Μ 6 can Combination; X can be F, C1, Br, :E, and any ~f-14; °^g<10;0<h<2; 1 <0<2. e^14j0 ~~〇S2, 1 <p<5; i < 26 200952225„.doc Χ$2 ; and 1 $5 〇 Preparation Example: Preparation method of luminescent material having the molecular formula (18) (18)
Pb〇.〇〇4CaL99Zn0.006Ge0.8Si0 2〇4 : ΜηPb〇.〇〇4CaL99Zn0.006Ge0.8Si0 2〇4 : Μη
Ge02、Si02、MnC03， 原材：PbO、CaC03、ΖηΟGe02, SiO2, MnC03, raw materials: PbO, CaC03, ΖηΟ
及/或刖述材料之任意組合。 氧化物(oxides)及/或碳酸鹽(carb〇nates)等型態之原材 可藉由少量的助焊劑(flux)，例如等，並以化學當 量比例(stoichiometric pr〇P〇rti〇ns)混合在―起。此混合物^ 在明礬坩禍(alumina crucible)内進行第一階段燒製約2小 時，其係於含氧大氣環境中以及溫度約為12〇〇〇c的條件 下進行。接著，攪拌該材料。之後，接著進行第二階段燒 製約2小時’其係於含氧大氣環境中以及溫度約為丨，2〇〇 % 的，件下進行。之後，此材料可被攪拌、洗滌、乾燥，以 及筛選。此最終的發光材料之發光波長約為655奈米。 表16 :在激發波長約為4〇〇奈米的情況下，鉛摻雜之 鍾-活化鍺酸鹽與未經鉛摻雜之錳_活化鍺酸鹽的比較。 表16 铜推雜化合物 無銅化合物 Pb〇.p〇4Ca1.99Zn〇.onrtGenfiSifl2〇4 ： ϋβι.99Ζη〇.〇ιυβ〇.8δϊ〇2〇Λ ; Λ/Γη 曼类密度（％) 101.5 100 _ ，皮長（奈米） 655 657 具有分子式（19)之發光材料的製備方法。 27 200952225 .And/or any combination of the materials. Materials such as oxides and/or carbs can be used with a small amount of flux, for example, etc., in stoichiometric pr〇P〇rti〇ns Mix in. This mixture was subjected to a first-stage calcination for 2 hours in an alumina crucible, which was carried out in an oxygen-containing atmosphere at a temperature of about 12 °C. Next, the material is stirred. Thereafter, the second-stage calcination was carried out for 2 hours, which was carried out in an oxygen-containing atmosphere and at a temperature of about 丨, 2 〇〇 %. This material can then be stirred, washed, dried, and screened. The final luminescent material has an emission wavelength of about 655 nm. Table 16: Comparison of lead doped clock-activated niobate with lead-doped manganese-activated niobate at an excitation wavelength of about 4 nanometers. Table 16 Copper doping compound copper-free compound Pb〇.p〇4Ca1.99Zn〇.onrtGenfiSifl2〇4 : ϋβι.99Ζη〇.〇ιυβ〇.8δϊ〇2〇Λ ;Λ/Γη Mann density (%) 101.5 100 _ , Pi Chang (Nano) 655 657 A method for preparing a luminescent material having the formula (19). 27 200952225 .
Λ/C (19)Λ/C (19)
Cu〇.46Sr〇.54Ge〇.6Si〇.4〇3 : Μη 原材：CuO、SrC03、Ge〇2、Si02、MnC03，及/或前 述材料之任意組合。 氧化物(oxides)及/或後酸鹽(carb〇nates)等型態之原材 可藉由少量的助焊劑(flux)，例如NI^Cl等，並以化學當 量比例（stoichiometric proportions)混合在一起。此混合物可 在明礬坩堝(alumina crucible)内進行第一階段燒製約2小 時，其係於含氧大氣環境中以及溫度約為LiOO 〇c的條件 下進行。接者，授拌該材料。之後，接著進行第二階段燒 製約4小時’其係於含氧大氣環境中以及溫度約為U8〇〇c 的$件下進行。之後，此材料可被攪拌、洗滌、乾燥，以 及篩選。此最終的發光材料之發光波長約為658奈米。 表17:在激發波長約為4〇〇奈米的情況下，銅摻雜之 錢-活化緒酸鹽-碎酸鹽與未經銅摻雜之鍾_活化錄酸鹽-石夕 酸鹽的比較。 表17 銅摻雜化合物 Ο 杉密度（％) 查長（奈米） C^ueSro.MGeo.fiSi^O,: Μη 無銅化合物 103 658~Cu〇.46Sr〇.54Ge〇.6Si〇.4〇3 : Μη Raw material: CuO, SrC03, Ge〇2, SiO2, MnC03, and/or any combination of the foregoing materials. Raw materials such as oxides and/or carbs can be mixed with a small amount of flux, such as NI^Cl, in stoichiometric proportions. together. This mixture can be subjected to a first stage calcination in an alumina crucible for 2 hours, in an oxygen-containing atmosphere and at a temperature of about about 100 〇c. Pick up the material and mix it. Thereafter, the second stage of the firing was carried out for 4 hours, which was carried out in an oxygen-containing atmosphere and at a temperature of about U8 〇〇c. This material can then be stirred, washed, dried, and screened. The final luminescent material has an emission wavelength of about 658 nm. Table 17: Copper-doped money-activated acid salt-fragmented acid salt and non-copper doped clock at the excitation wavelength of about 4 Å. Comparison. Table 17 Copper doped compounds Cedar density (%) Check length (nano) C^ueSro.MGeo.fiSi^O,: Μη Copper-free compound 103 658~
SrGe〇 fiSi〇 4〇3 Μη. 100_ 655 表18 .在激發波長約為400奈米的情況下，一些能夠 被長波長紫外光及/或可見光激發的銅及/或鉛摻雜之鍺酸 鹽•矽酸鹽之光學特性’及其發光密度百分比的比較。 28 200952225^ 表18 組成 可能激 發禕圍 (奈,） _激發波U 4〇0奪半的 下，與桌摻fg /鉛之化合物控 發光密度比較 {%) 銅/鉛摻雜 之化合私 的疼長^ 夺(奈米） — 未摻雜銅/鉛 之化合成的 J長波峰(¾ 米） ^t>〇.〇〇4Uai.99^Il〇.006^Je〇.8lSiftoO- · Μη 360-400 101.5 655 657 Fb〇.〇〇2i>r〇.954^ai.044^〇.93Si0〇7〇 :Μη 360-400 101.5 660 661 Cu〇.46^r〇.54Ge〇.6Si〇.4〇3 . Μη 360-400 103 ^1 658 655 — ^U〇.〇〇2Sr〇.998iia〇.99^a〇i〇1^i〇98Qe〇〇2Q^ , Eu 360-470 102 538 533 Cu145Mg26.55〇e9.4^1〇.6〇4R ： Μη 360-400 102 660 657 ' CUi.2Mg26.8⑼8.办1.仙》: Nfn 360-400 103.8 670 656 Cu4Mg2〇Zu4Gc5Si2.5〇^8i^ln * 360-400 101.5 658 655 Pbo.ooiBao.^Zno.osSri^Geo^si^O • £u 360-470 101.8 550 545 Cu〇 〇5Mg4 950606^2 * Mil 360-400 100.5 655 653 Cu〇.〇5Mg3.95Ge〇5 st : Mn 360 - 400 100.8 657 653 錯及/或銅摻雜之磷酸鹽具有分子式p〇)。 a(M10)-b(M22〇)x(M2x^dp2〇5.e^M3〇^f(M42〇3>).g^M5〇2.).h(. M6xOy) ……（20) ❹ 2其中’ M1可為Pb、Cu，及/或前述材料之任意組合； Μ可為Li、Na、K、Rb、Cs、Au、Ag，及/或前述材料之 任意組合；M3 可為 Be、Mg、Ca、Sr、Ba、Zn、Cd、Μη， 及/或前述材料之任意組合；M4可為Sc、Y、B、A1、La、 Ga、In’及/或前述材料之任意組合；M5可為Si、Ge、Ti、 Zr、Hf、V、Nb、Ta、W、Mo,及/或前述材料之任意組合； M6 可為 Bi、Sn、Pr、Sm、Eu、Gd、Dy、Ce、Tb，及/或 如述材料之任意組合；X可為F、C卜Br、I，及/或前述材 料之任意組合；0<a$2;0$bSl2;0<cSl6;0<d£3; 29 200952225 、 0<e$5;0sf^3;0SgS2;0<h$2;i$xS2;以及 1 S y S 5。 製備的例+: 具有分子式(21)之發光材料的製備方法。SrGe〇fiSi〇4〇3 Μη. 100_ 655 Table 18. Copper and/or lead doped tellurates capable of being excited by long-wavelength ultraviolet and/or visible light at an excitation wavelength of approximately 400 nm • Comparison of the optical properties of citrate and its percentage of luminescent density. 28 200952225^ Table 18 Composition possible excitation range (Nai,) _ excitation wave U 4〇0 halved, compared with table-doped fg / lead compound control luminescence density {%) Copper / lead doping痛长^ 夺(奈米) — J long wave peak (3⁄4 m) synthesized without undoped copper/lead ^t>〇.〇〇4Uai.99^Il〇.006^Je〇.8lSiftoO- · Μη 360 -400 101.5 655 657 Fb〇.〇〇2i>r〇.954^ai.044^〇.93Si0〇7〇:Μη 360-400 101.5 660 661 Cu〇.46^r〇.54Ge〇.6Si〇.4 〇3 . Μη 360-400 103 ^1 658 655 — ^U〇.〇〇2Sr〇.998iia〇.99^a〇i〇1^i〇98Qe〇〇2Q^ , Eu 360-470 102 538 533 Cu145Mg26. 55〇e9.4^1〇.6〇4R : Μη 360-400 102 660 657 ' CUi.2Mg26.8(9)8.1. Xian: Nfn 360-400 103.8 670 656 Cu4Mg2〇Zu4Gc5Si2.5〇^8i^ln * 360-400 101.5 658 655 Pbo.ooiBao.^Zno.osSri^Geo^si^O • £u 360-470 101.8 550 545 Cu〇〇5Mg4 950606^2 * Mil 360-400 100.5 655 653 Cu〇.〇5Mg3 .95Ge〇5 st : Mn 360 - 400 100.8 657 653 The wrong and/or copper-doped phosphate has the molecular formula p〇). a(M10)-b(M22〇)x(M2x^dp2〇5.e^M3〇^f(M42〇3>).g^M5〇2.).h(. M6xOy) ......(20) ❹ 2 wherein 'M1 may be Pb, Cu, and/or any combination of the foregoing materials; Μ may be Li, Na, K, Rb, Cs, Au, Ag, and/or any combination of the foregoing; M3 may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Μη, and/or any combination of the foregoing; M4 may be Sc, Y, B, A1, La, Ga, In' and/or any combination of the foregoing; M5 It may be Si, Ge, Ti, Zr, Hf, V, Nb, Ta, W, Mo, and/or any combination of the foregoing materials; M6 may be Bi, Sn, Pr, Sm, Eu, Gd, Dy, Ce, Tb, and/or any combination of materials as described; X may be F, C, Br, I, and/or any combination of the foregoing; 0 <a$2;0$bSl2; 0 <cSl6; 0 < d £3 29 200952225 , 0 <e$5;0sf^3;0SgS2; 0 <h$2;i$xS2; and 1 S y S 5. Preparation Example +: A method for producing a luminescent material having the formula (21).
Cu0,〇2Ca4.98(P〇4)3Cl: Eu ......(21) 原材：CuO、CaC03、Ca3(P〇4)2、CaCl2、Eu203，及/ 或前述材料之任意組合。 © 氧化物(oxides)、填酸鹽，及/或碳酸鹽(carb〇nates)、 氣化物型態之原材可藉由少量的助焊劑(flux)，並以化學當 量比例(stoichiometric proportions)混合在一起。此混合物可 在明礬掛塌(alumina crucible)内進行第一階段燒製約2小 時’其係於減壓環境以及溫度約為1，24〇。(：的條件下進 行。之後，此材料可被攪拌、洗滌、乾燥，以及篩選。此 最終的發光材料之發光波長約為450奈米。 表19 :在激發波長約為400奈米的情況下，銅摻雜之 ❹ Eu2+-活化氣磷酸鹽與未經銅摻雜之此2+_活化氯磷酸鹽的 比較。 表19 鋼捧雜化合物 ^銅化合物 Cu〇.〇2Ca4 ,*α>04)3α: Eu Ca-iiPOACl ： Fu 会光密度（％) 101.5 100 k長（奈米） 450 447 表20 :在激發波長約為400奈米的情況下，一些能夠 被長波長紫外光及/或可見光激發的銅及/或鉛摻雜之磷酸 30 200952225 d ^ LX.doc 鹽之光學特性，及其發光密度百分比的比較。 表20 組成 ψη 在激發波長養 的情況下，與未摻雜銅/ 紹之化合物沾#光备皮 比鮫㈤ 楚匕摻雜之 長波4(奈米) ifffl 長波峰(奈 Cu〇 〇2Sr4.98(P〇4)sCl: Eu 360-410 101.5 450 ' 447 Cu〇.2Mg〇.gBaP2〇7 ： Eu, Μη 360-400 102 638 635 Pb〇.5Sri.5Pl.84B〇.16〇6M : EU 360 - 400 102 425 420 t^i〇.5Mg〇 5Ba2(P9Si)2〇8 ： Eu 360-400 101 573 570 Cu〇.5Sr9.5(P，B)6024Cl2: Eu 360-410 102 460 " 456 Cu〇.5Ba3Sr6.5P6024(F，Cl)2 :Eu 360 - 410 102 443 442 Cu〇>〇5(Ca,Sr,Ba)4 95JP3〇]2Cl :Eu, Mn 360-410 101.5 438,641 435, 640 Pb〇 ： Eu 360-400 103 421 419 — 承上述，本發明之發光元件内的燐光體可包括鋁酸 鹽、矽酸鹽、銻酸鹽、鍺酸鹽、磷酸鹽型態之化合物，及 前述材料之任意組合。 ❹Cu0, 〇2Ca4.98(P〇4)3Cl: Eu (21) Raw material: CuO, CaC03, Ca3(P〇4)2, CaCl2, Eu203, and/or any combination of the foregoing materials . © oxides, acidates, and/or carbonates, vaporized forms of raw materials can be mixed with a small amount of flux and stoichiometric proportions. Together. This mixture can be subjected to a first stage of combustion for 2 hours in an alumina crucible. It is in a reduced pressure environment and has a temperature of about 1,24 Torr. This can be done under conditions of:. This material can be stirred, washed, dried, and screened. The final luminescent material has an emission wavelength of about 450 nm. Table 19: At an excitation wavelength of about 400 nm. Copper-doped yttrium Eu2+-activated gas phosphate is compared with this 2+-activated chlorophosphate which is not doped with copper. Table 19 Steel-bearing compound copper compound Cu〇.〇2Ca4,*α>04) 3α: Eu Ca-iiPOACl : Fu Optical density (%) 101.5 100 k long (nano) 450 447 Table 20: Some ultraviolet light and/or visible light capable of being long-wavelength at an excitation wavelength of about 400 nm Excited copper and/or lead doped phosphoric acid 30 200952225 d ^ LX.doc The optical properties of the salt and the comparison of the percentage of its luminescent density. Table 20 Composition ψη In the case of excitation wavelength, it is mixed with undoped copper/Shao compound. #光备皮比鲛(5) Chuan-doped long-wave 4 (nano) ifffl long wave peak (Na Cu〇〇2Sr4. 98(P〇4)sCl: Eu 360-410 101.5 450 ' 447 Cu〇.2Mg〇.gBaP2〇7 : Eu, Μη 360-400 102 638 635 Pb〇.5Sri.5Pl.84B〇.16〇6M : EU 360 - 400 102 425 420 t^i〇.5Mg〇5Ba2(P9Si)2〇8 : Eu 360-400 101 573 570 Cu〇.5Sr9.5(P,B)6024Cl2: Eu 360-410 102 460 " 456 Cu〇.5Ba3Sr6.5P6024(F,Cl)2 :Eu 360 - 410 102 443 442 Cu〇>〇5(Ca,Sr,Ba)4 95JP3〇]2Cl :Eu, Mn 360-410 101.5 438,641 435, 640 Pb〇: Eu 360-400 103 421 419 - In the above, the phosphor in the light-emitting element of the present invention may include an aluminate, a citrate, a citrate, a citrate, a phosphate compound, and the foregoing Any combination of materials.
圖6緣示為依照本發明一實施例具有發光材料之發光 元件的發光頻譜。本實施例具有發光波長為405耐米之發 光二極體以及燐光體，且此燐光體係藉由上述化合物以一 定比例混合而成。燐光體可由波長波峰約為451耐米之 Cuo.osBaMgwAlbO27 : Eu、波長波峰約為586耐米之 Cuo^SruCao.eSiO4 : Eu、波長波峰約為512财米之 Ρν15Β&1.84Ζη0·01 Si〇.99Zr〇.01〇4 : Eu，以及波長波峰約為 494 耐米之 Cu〇.2Sr3 8Ali4 〇25 : Eu 所構成。 在本實施例中，部分從發光二極體所發出，且波長為 405耐米的初始光線會被燐光體所吸收，並被轉換為較長 的2nd波長。Ist光線與2nd光線係混合在一起，以產生所需 之光線。如圖6所繪示’發光元件會將波長為4〇5耐米之 Is紫外光轉換為寬頻譜範圍之可見光，即白 此 31 200952225 、 溫約為3,000K，而現色指數(CRI)係介於約90至約95之 間。 圖7緣示為依照本發明另一實施例具有發光材料之發 光元件的發光頻譜。本實施例具有發光波長為455耐米之 發光二極髏以及燐光體，且此燐光體係藉由上述化合物以 一定比例混合而成。 燐光體可由波長波峰約為592耐来之 Cuo.osSruCao.^SiO4 : Eu、波長波峰約為527耐米之Fig. 6 is a view showing an emission spectrum of a light-emitting element having a light-emitting material according to an embodiment of the present invention. This embodiment has a light-emitting diode having a light-emitting wavelength of 405 nm and a phosphor, and the calendering system is formed by mixing the above compounds in a certain ratio. The phosphor can be obtained by Cuo.osBaMgwAlbO27: Eu with a wavelength peak of about 451 nm, Cuo^SruCao.eSiO4: Eu with a wavelength peak of about 586 nm, and Ρν15Β&1.84Ζη0·01 Si〇 with a wavelength peak of about 512 m. 99Zr〇.01〇4 : Eu, and the wavelength peak is about 494 N of Cu〇.2Sr3 8Ali4 〇25 : Eu. In this embodiment, a portion of the initial light emitted from the light-emitting diode and having a wavelength of 405 mils is absorbed by the phosphor and converted into a longer 2nd wavelength. Ist rays are mixed with the 2nd light system to produce the desired light. As shown in Fig. 6, the 'light-emitting element converts Is ultraviolet light having a wavelength of 4 〇 5 耐 into visible light in a wide spectral range, that is, white 31 200952225, temperature is about 3,000 K, and the color rendering index (CRI) is Between about 90 and about 95. Fig. 7 is a view showing an emission spectrum of a light-emitting element having a light-emitting material according to another embodiment of the present invention. This embodiment has a light-emitting diode and a phosphor having an emission wavelength of 455 nm, and the calendering system is formed by mixing the above compounds in a certain ratio. The phosphor can be made up of a wavelength peak of about 592. Cuo.osSruCao.^SiO4: Eu, the wavelength peak is about 527 meters.
Pb〇.iBa〇.95Sr〇.95Si〇.998Ge〇.〇〇204 : Eu，以及波長波峰約為 557 ❹ 对米之 Cuo.osLio.oc^Sru Ba〇.448Si〇4 : Gd, Eu 所構成。 在本實施例中，部分從發光二極體所發出，且波長為 455耐米的初始光線會被燐光體所吸收，並被轉換為較長 的2nd波長。Ist光線與2nd光線係混合在一起，以產生所需 之光線。如圖7所繪示，發光元件會將波長為4〇5耐米之 Ist藍光轉換為寬頻譜範圍之可見光，即白光。此時，色溫 係介於約4,000K至約6,500K之間，而現色指數(CRi)係介 於約86至約93之間。 〇 除了前述圖6與圖7中所描述之化合物，本發明中發 光元件内的燐光體亦可以是其他種單一化合物或是多種單 一化合物的混合物。 依據别述之内谷，含有稀土元素之錯及/或銅摻雜之化 合物可使得發光元件具有寬色溫範圍，介於約2,〇〇〇κ至約 8,000Κ或約10,000Κ之間’以及大於9〇之優越色現指數。 前述波長轉換型發光元件能夠應用在行動電話、筆記 32 200952225* 型電腦，以及家電、立體聲音響、電信元件等電子元件中， 亦可應用在展覽顯示器之按鍵(key pad)以及背光源。此 外，此波長轉換型發光元件尚可應用在汽車、醫療儀器及 照明產品中。 ’、° 本發明可提供一種波長轉換型發光元件，其具有抗 水、抗蒸氣以及抗極性溶劑等穩定性(stability)。 雖然本發明已以較佳實施例揭露如上，然其並非用以 ❹ 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 =範圍内，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1繪示為依照本發明一實施例晶片型態之發光元件 封裝體的侧向剖面圖。 圖2繪示為依照本發明一實施例頂蓋型態之發光元件 封裝體的侧向剖面圖。 〇 圖3繪示為依照本發明一實施例燈體型態之發光元件 封襞體的側向剖面圖。 圖4緣示為依照本發明一實施例高功率發光元件封 體的侧向剖面圖。 圖5緣不為依照本發明另一實施例高功率發光元件 裝體的側向剖面圖。 圖ό緣示為依照本發明一實施例具有發光材料之發光 凡件的發光頻譜。 圖7繪示為依照本發明另一實施例具有發光材料之發 33 200952225 \JV/ 光元件的發光頻譜。 【主要元件符號說明】 1 :基材 2 :導線 3 :燐光體（物質） 5 .電極 6、7 :發光二極體 9 :導電膠 10 :密封材料 31 :反射器 40:晶片型態之發光元件封裝體 50 :頂蓋型態之發光元件封裝體 51、52 :接腳 53 :二極體支架 60 :燈體型態之發光元件 61、62、71 :散熱器 63、 73 :殼體 64、 74 :導線架 70、80 :發光元件Pb〇.iBa〇.95Sr〇.95Si〇.998Ge〇.〇〇204: Eu, and the wavelength peak is about 557 ❹ to the composition of Cuo.osLio.oc^Sru Ba〇.448Si〇4 : Gd, Eu . In this embodiment, part of the initial light emitted from the light-emitting diode and having a wavelength of 455 nm is absorbed by the phosphor and converted into a longer 2nd wavelength. Ist rays are mixed with the 2nd light system to produce the desired light. As shown in Fig. 7, the light-emitting element converts Ist blue light having a wavelength of 4 〇 5 耐 into visible light of a wide spectral range, that is, white light. At this time, the color temperature is between about 4,000 K and about 6,500 K, and the color rendering index (CRi) is between about 86 and about 93. 〇 In addition to the compounds described in the foregoing Figures 6 and 7, the phosphor in the light-emitting element of the present invention may be a single compound or a mixture of a plurality of single compounds. According to an inner valley, a compound containing a rare earth element and/or a copper doping may cause the light emitting element to have a wide color temperature range of between about 2, 〇〇〇κ to about 8,000 Κ or about 10,000 Å. A superior color index greater than 9 inches. The wavelength conversion type light-emitting element can be applied to a mobile phone, a computer, a home appliance, a stereo, a telecommunication component, and the like, and can also be applied to a key pad and a backlight of an exhibition display. In addition, this wavelength conversion type illuminating element can be applied to automobiles, medical instruments, and lighting products. The present invention can provide a wavelength conversion type light-emitting element which has stability against water, vapor, and polar solvents. Although the present invention has been described above by way of a preferred embodiment, it is not intended to limit the invention, and those skilled in the art can make some modifications and refinements without departing from the spirit of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a side cross-sectional view showing a package of a light-emitting element of a wafer type according to an embodiment of the present invention. 2 is a side cross-sectional view of a light-emitting device package of a top cover type in accordance with an embodiment of the present invention. 3 is a side cross-sectional view showing a light-emitting device package body of a lamp body type according to an embodiment of the present invention. Figure 4 is a side cross-sectional view showing a high power light emitting element package in accordance with an embodiment of the present invention. Figure 5 is a side cross-sectional view of a high power light emitting device package in accordance with another embodiment of the present invention. The figure 示 is shown as an illuminating spectrum of a luminescent article having a luminescent material in accordance with an embodiment of the present invention. FIG. 7 is a diagram showing an emission spectrum of a light-emitting material having a light-emitting material according to another embodiment of the present invention. [Explanation of main component symbols] 1 : Substrate 2 : Conductor 3 : phosphor (material) 5. Electrode 6, 7 : Light-emitting diode 9 : Conductive adhesive 10 : Sealing material 31 : Reflector 40 : Wafer type light emission Component package 50: cover type light-emitting element package 51, 52: pin 53: diode holder 60: lamp-type light-emitting element 61, 62, 71: heat sink 63, 73: housing 64 , 74: lead frame 70, 80: light-emitting element
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-
2004
- 2004-06-10 KR KR1020040042396A patent/KR100665298B1/en active IP Right Grant
- 2004-12-22 EP EP08166716.4A patent/EP2025734B1/en active Active
- 2004-12-22 DE DE202004021351U patent/DE202004021351U1/en not_active Expired - Lifetime
- 2004-12-22 ES ES04106882T patent/ES2350830T3/en active Active
- 2004-12-22 ES ES08166716.4T patent/ES2490603T3/en active Active
- 2004-12-22 DE DE602004028710T patent/DE602004028710D1/en active Active
- 2004-12-22 EP EP04106882A patent/EP1605030B1/en active Active
- 2004-12-22 EP EP10177830A patent/EP2253690A3/en not_active Withdrawn
- 2004-12-22 AT AT04106882T patent/ATE478126T1/en active
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- 2004-12-30 US US11/024,702 patent/US7554129B2/en active Active
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Also Published As
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|---|---|
| EP2025734A2 (en) | 2009-02-18 |
| CN1707819A (en) | 2005-12-14 |
| ATE478126T1 (en) | 2010-09-15 |
| TW200541105A (en) | 2005-12-16 |
| EP2025734A3 (en) | 2009-06-10 |
| US8066909B2 (en) | 2011-11-29 |
| ES2350830T3 (en) | 2011-01-27 |
| EP2253690A2 (en) | 2010-11-24 |
| CN100442553C (en) | 2008-12-10 |
| DE202004021351U1 (en) | 2007-10-11 |
| ES2490603T3 (en) | 2014-09-04 |
| US7554129B2 (en) | 2009-06-30 |
| US20050274972A1 (en) | 2005-12-15 |
| US20100301371A1 (en) | 2010-12-02 |
| EP2025734B1 (en) | 2014-05-14 |
| KR100665298B1 (en) | 2007-01-04 |
| KR20050117164A (en) | 2005-12-14 |
| CN101424388A (en) | 2009-05-06 |
| TWI344228B (en) | 2011-06-21 |
| EP1605030B1 (en) | 2010-08-18 |
| PT1605030E (en) | 2010-11-22 |
| JP4159542B2 (en) | 2008-10-01 |
| US20080224163A1 (en) | 2008-09-18 |
| JP2005354027A (en) | 2005-12-22 |
| EP1605030A2 (en) | 2005-12-14 |
| MX2007007648A (en) | 2007-09-18 |
| TWI328885B (en) | 2010-08-11 |
| US20080067920A1 (en) | 2008-03-20 |
| CN101424388B (en) | 2011-04-13 |
| EP1605030A3 (en) | 2007-09-19 |
| US8089084B2 (en) | 2012-01-03 |
| EP2253690A3 (en) | 2012-02-15 |
| DE602004028710D1 (en) | 2010-09-30 |
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