JP2002368277A - Chip semiconductor light-emitting device - Google Patents
Chip semiconductor light-emitting deviceInfo
- Publication number
- JP2002368277A JP2002368277A JP2001169097A JP2001169097A JP2002368277A JP 2002368277 A JP2002368277 A JP 2002368277A JP 2001169097 A JP2001169097 A JP 2001169097A JP 2001169097 A JP2001169097 A JP 2001169097A JP 2002368277 A JP2002368277 A JP 2002368277A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor light
- light emitting
- chip
- emitting device
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、表面パネルや液晶
表示装置のバックライト、携帯機器のインジケータ、照
明スイッチ、事務機器の光源などに用いられる半導体発
光装置であって、特に、回路基板に表面実装が可能なチ
ップ型半導体発光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device used for a backlight of a surface panel or a liquid crystal display device, an indicator of a portable device, a lighting switch, a light source of office equipment, and the like. The present invention relates to a chip-type semiconductor light emitting device that can be mounted.
【０００２】[0002]
【従来の技術】近年における電子機器の小型・薄型化傾
向に伴って、回路基板に表面実装が可能なチップ型半導
体発光装置の需要が急速に増加している。図３は従来の
チップ型半導体発光装置の一構成例を示す模式図であ
る。なお、本図中の（ａ）はチップ型半導体発光装置３
０を前上方から俯瞰した概略斜視図であり、（ｂ）は概
略斜視図（ａ）中の一点鎖線Ａ−Ａ’でチップ型半導体
発光装置３０を切断した場合に現れる縦断面図である。
また、（ｃ）はチップ型半導体発光装置３０を下方から
見た裏面図である。2. Description of the Related Art With the recent trend toward smaller and thinner electronic devices, the demand for chip-type semiconductor light-emitting devices that can be surface-mounted on circuit boards is rapidly increasing. FIG. 3 is a schematic diagram showing one configuration example of a conventional chip-type semiconductor light emitting device. (A) in this figure is a chip type semiconductor light emitting device 3.
FIG. 2 is a schematic perspective view of the chip-type semiconductor light-emitting device 30 cut off along a dashed line AA ′ in the schematic perspective view (a).
(C) is a rear view of the chip-type semiconductor light emitting device 30 as viewed from below.
【０００３】本図に示すチップ型半導体発光装置３０で
は、平面視長矩形状をした絶縁性のチップ基板３１の長
手方向両端部に、表面側から裏面側に回り込む一対の端
子電極３２ａ、３２ｂがパターン形成されている。端子
電極３２ａ、３２ｂのうち、一方の端子電極３２ａの表
面側にはダイボンディング部（不図示）が形成されてお
り、該ダイボンディング部には半導体発光素子３３の下
面電極（不図示）がダイボンディングされている。ま
た、他方の端子電極３２ｂの表面側にはワイヤボンディ
ング部（不図示）が形成されており、該ワイヤボンディ
ング部と半導体発光素子３３の上面電極（不図示）とが
ボンディングワイヤ３４によって結線されている。な
お、半導体発光素子３３及びボンディングワイヤ３４
は、透光性の樹脂封止体３５によって封止されている。In a chip type semiconductor light emitting device 30 shown in FIG. 1, a pair of terminal electrodes 32a and 32b extending from the front side to the back side are formed on both ends in the longitudinal direction of an insulating chip substrate 31 having a rectangular shape in a plan view. Is formed. A die bonding portion (not shown) is formed on the surface side of one of the terminal electrodes 32a and 32b, and a lower electrode (not shown) of the semiconductor light emitting element 33 is formed on the die bonding portion. Bonded. A wire bonding portion (not shown) is formed on the surface side of the other terminal electrode 32b, and the wire bonding portion and the upper surface electrode (not shown) of the semiconductor light emitting element 33 are connected by a bonding wire. I have. The semiconductor light emitting element 33 and the bonding wire 34
Are sealed by a translucent resin sealing body 35.
【０００４】[0004]
【発明が解決しようとする課題】上記したチップ基板３
１の形成素材としては、絶縁性・耐熱性などに優れたエ
ポキシ・ガラス材やポリイミド・アミド材（例えば、三
菱ガス化学社製「ＢＴレジン」）などが広く用いられて
おり、チップ基板３１の高い絶縁性・耐熱性が確保され
ている。また、樹脂封止体３５の形成素材としては、透
光性などに優れたエポキシ樹脂などが一般的に用いられ
ており、樹脂封止体３５の高い透光性が確保されてい
る。The above-mentioned chip substrate 3
As a material for forming the substrate 1, an epoxy glass material or a polyimide amide material (for example, “BT resin” manufactured by Mitsubishi Gas Chemical Co., Ltd.) having excellent insulating properties and heat resistance is widely used. High insulation and heat resistance are ensured. In addition, as a material for forming the resin sealing body 35, an epoxy resin or the like having excellent translucency is generally used, and high translucency of the resin sealing body 35 is ensured.
【０００５】しかしながら、絶縁性チップ基板３１に好
適な形成素材は、上記で例示したエポキシ・ガラス材や
ポリイミド・アミド材を含めて、一般的に熱伝導率が低
い。また、透光性の樹脂封止体３５に好適な形成素材
も、上記で例示したエポキシ樹脂を含めて、一般的に熱
伝導率が低い。[0005] However, materials suitable for forming the insulating chip substrate 31, including the epoxy glass material and the polyimide amide material exemplified above, generally have low thermal conductivity. In addition, the forming material suitable for the translucent resin sealing body 35 also generally has low thermal conductivity including the epoxy resin exemplified above.
【０００６】そのため、半導体発光素子３３で発生した
熱量は、端子電極３２ａ、３２ｂを伝わって外部に抜け
出る放散分以外、そのほとんどが樹脂封止体３５内に蓄
積されており、半導体発光素子３３の温度は点灯時間の
増大に伴って大きく上昇する傾向があった。特に、高輝
度の半導体発光素子３３ほど発熱量が多く、その温度上
昇が顕著なものとなっていた。このような半導体発光素
子３３の温度上昇は、半導体発光素子３３の発光効率低
下や輝度低下を引き起こし、チップ型半導体発光装置３
０から放出される光の色調に変化を来すおそれがあっ
た。For this reason, most of the heat generated by the semiconductor light emitting element 33 is accumulated in the resin sealing body 35 except for the amount of heat that is transmitted to the terminal electrodes 32 a and 32 b and escapes to the outside. The temperature tended to increase significantly as the lighting time increased. In particular, the higher the brightness of the semiconductor light emitting element 33, the larger the amount of heat generated, and the temperature rise was remarkable. Such a rise in the temperature of the semiconductor light emitting element 33 causes a decrease in the luminous efficiency and a decrease in the luminance of the semiconductor light emitting element 33, and the chip type semiconductor light emitting device 3
There was a possibility that the color tone of light emitted from 0 might change.
【０００７】上記のような半導体発光素子の発熱に起因
する不具合を解消するために、これまでにも、半導体発
光素子で発生した熱量を効率よく外部に発散させる技術
が種々提案されている。[0007] In order to solve the above-mentioned problems caused by heat generation of the semiconductor light emitting device, various techniques have been proposed for efficiently dissipating the heat generated by the semiconductor light emitting device to the outside.
【０００８】例えば、特開平１０−３０３４６４号公報
では、チップ基板表面側の端子電極上に導電性部材から
成る放熱板を固着して、半導体発光素子から発生する熱
量をこの放熱板により拡散・放熱する技術が提案されて
いる。確かに、係る技術によれば半導体発光素子で発生
する熱量を効率よく放熱することができる。しかしなが
ら、ここで使用されるステンレスや銅、アルミニウムな
どの放熱板は、一般的に樹脂封止体であるエポキシ樹脂
との密着性に問題がある。そのため、このようなチップ
型半導体発光装置を回路基板にハンダ付けする際には、
溶融したハンダが該放熱板表面を伝って樹脂封止体内部
へ侵入し、さらに該進入経路から水蒸気などが侵入して
半導体発光素子やボンディングワイヤを腐食させ、導通
不良を引き起こすおそれがあった。加えて、チップ基板
表面に明度の低い部材から成る放熱板を固着すると、反
射効率が悪くなるおそれがあった。For example, in Japanese Patent Application Laid-Open No. Hei 10-303364, a radiator plate made of a conductive member is fixed on a terminal electrode on the surface of a chip substrate, and the amount of heat generated from the semiconductor light emitting element is diffused and radiated by the radiator plate. A technology to do this has been proposed. Indeed, according to such a technique, the amount of heat generated in the semiconductor light emitting device can be efficiently radiated. However, the heat radiating plate of stainless steel, copper, aluminum or the like used here generally has a problem in adhesion to an epoxy resin which is a resin sealing body. Therefore, when soldering such a chip type semiconductor light emitting device to a circuit board,
The molten solder may enter the resin sealing body along the surface of the heat radiating plate, and water vapor or the like may enter from the entry path to corrode the semiconductor light emitting element and the bonding wire, thereby causing a conduction failure. In addition, if a heat sink made of a low-brightness member is fixed to the surface of the chip substrate, the reflection efficiency may be deteriorated.
【０００９】また、特開平７−２０２２７１号公報で
は、チップ基板の裏面に導電性の放熱用ランドや放熱板
を設け、半導体発光素子から発生する熱量をこれらの放
熱用ランドや放熱板により拡散・放熱する技術が提案さ
れている。確かに、係る技術によれば半導体発光素子で
発生する熱を効率よく放熱することができる。しかしな
がら、チップ基板の裏面に導電性の放熱用ランドや放熱
板を設けた構成では、該チップ型半導体発光装置を回路
基板にクリームハンダ等で実装する際、チップ基板の両
端に形成された一対の端子電極にそれぞれ塗布されたク
リームハンダが、リフロー炉で溶融して放熱用ランドや
放熱板にまで達してしまい、端子電極間の短絡を引き起
こす可能性が高かった。In Japanese Patent Application Laid-Open No. 7-202271, a conductive radiating land or heat radiating plate is provided on the back surface of a chip substrate, and the amount of heat generated from the semiconductor light emitting element is diffused by the radiating land or radiating plate. A heat dissipation technology has been proposed. Indeed, according to such a technique, heat generated in the semiconductor light emitting element can be efficiently radiated. However, in a configuration in which conductive heat radiating lands or heat radiating plates are provided on the back surface of the chip substrate, when the chip-type semiconductor light emitting device is mounted on a circuit board with cream solder or the like, a pair of chips formed on both ends of the chip substrate are provided. The cream solder applied to each of the terminal electrodes was melted in the reflow furnace and reached the radiating lands and the radiating plate, and there was a high possibility of causing a short circuit between the terminal electrodes.
【００１０】本発明は上記の問題点に鑑み、反射効率を
低下させることなく半導体発光素子から発生する熱量を
効率的に発散でき、かつ回路基板へのハンダ付けを行う
際にも端子電極間の短絡を起こさないチップ型半導体発
光装置の提供を目的とする。In view of the above problems, the present invention can efficiently dissipate the amount of heat generated from a semiconductor light emitting element without lowering the reflection efficiency, and when soldering to a circuit board, the distance between the terminal electrodes can be reduced. An object of the present invention is to provide a chip-type semiconductor light emitting device that does not cause a short circuit.
【００１１】[0011]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係るチップ型半導体発光装置は、絶縁性の
チップ基板と、該チップ基板の表面両端部に設けられた
一対の第１、第２端子電極と、自身の上面及び下面にそ
れぞれ電極が形成された半導体発光素子と、を有し、前
記半導体発光素子の下面電極が第１端子電極上に導通可
能に固着されるとともに、上面電極が第２端子電極に接
続され、かつ該半導体発光素子が透光性樹脂で封止され
て成るチップ型半導体発光装置において、第１端子電極
上に固着された前記半導体発光素子の直下に位置する前
記チップ基板の一部分に、該チップ基板の表面から裏面
に至るセラミック製の放熱部材を設けた構成としてい
る。In order to achieve the above object, a chip-type semiconductor light emitting device according to the present invention comprises an insulating chip substrate and a pair of first first and second first and second first and second first terminals provided at both ends of the surface of the chip substrate. , A second terminal electrode, and a semiconductor light emitting element having electrodes formed on its upper and lower surfaces, respectively, and the lower electrode of the semiconductor light emitting element is conductively fixed on the first terminal electrode, In a chip-type semiconductor light-emitting device in which an upper electrode is connected to a second terminal electrode and the semiconductor light-emitting element is sealed with a translucent resin, the chip-type semiconductor light-emitting device is disposed directly below the semiconductor light-emitting element fixed on the first terminal electrode. A part of the located chip substrate is provided with a ceramic heat radiating member from the front surface to the rear surface of the chip substrate.
【００１２】なお、上記構成から成るチップ型半導体発
光装置では、前記放熱部材を液体セラミックによって形
成するとよい。In the chip-type semiconductor light emitting device having the above structure, the heat radiating member may be formed of liquid ceramic.
【００１３】また、上記構成から成るチップ型半導体発
光装置では、前記放熱部材をシリカアルミナ系セラミッ
クによって形成するとよい。Further, in the chip-type semiconductor light emitting device having the above configuration, it is preferable that the heat radiation member is formed of silica-alumina ceramic.
【００１４】また、上記構成から成るチップ型半導体発
光装置では、前記チップ基板の裏面側に露出する前記放
熱部材の一端面形状を、外気との接触面積が大きい形状
にするとよい。Further, in the chip-type semiconductor light emitting device having the above-mentioned configuration, it is preferable that one end face of the heat radiation member exposed on the back side of the chip substrate has a shape having a large contact area with the outside air.
【００１５】[0015]
【発明の実施の形態】まず、本発明に係るチップ型半導
体発光装置の第１実施形態として、ここでは本発明をモ
ールドタイプのチップ型半導体発光装置に適用した場合
を例に挙げて説明を行う。図１は本発明に係るチップ型
半導体発光装置の第１実施形態を示す模式図である。な
お、本図中の（ａ）はチップ型半導体発光装置１０を前
上方から俯瞰した概略斜視図であり、（ｂ）は概略斜視
図（ａ）中の一点鎖線Ａ−Ａ’でチップ型半導体発光装
置１０を切断した場合に現れる縦断面図である。また、
（ｃ）はチップ型半導体発光装置１０を下方から見た裏
面図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, as a first embodiment of a chip type semiconductor light emitting device according to the present invention, a case where the present invention is applied to a mold type chip type semiconductor light emitting device will be described as an example. . FIG. 1 is a schematic diagram showing a first embodiment of a chip type semiconductor light emitting device according to the present invention. 1A is a schematic perspective view of the chip-type semiconductor light-emitting device 10 as viewed from above and from above, and FIG. 2B is a schematic perspective view of the chip-type semiconductor light-emitting device 10 indicated by a dashed line AA ′ in FIG. FIG. 4 is a longitudinal sectional view that appears when the light emitting device 10 is cut. Also,
(C) is a rear view of the chip-type semiconductor light emitting device 10 as viewed from below.
【００１６】本図に示すチップ型半導体発光装置１０で
は、平面視長矩形状をした絶縁性のチップ基板１１の長
手方向（紙面左右方向）両端部に、その表面側から裏面
側に回り込む一対の端子電極１２ａ、１２ｂが形成され
ている。In the chip-type semiconductor light emitting device 10 shown in FIG. 1, a pair of terminals wrapping from the front side to the rear side at both ends in the longitudinal direction (left and right directions on the paper) of an insulating chip substrate 11 having a rectangular shape in a plan view. Electrodes 12a and 12b are formed.
【００１７】該チップ型半導体発光装置１０をマザーボ
ード等の回路基板（不図示）上に搭載する際には、ま
ず、端子電極１２ａ、１２ｂと回路基板上の配線パター
ンとを接触させるように、チップ型半導体発光装置１０
が回路基板上に配設される。続いて、端子電極１２ａ、
１２ｂ及び回路基板上の配線パターンにクリームハンダ
等の導電性接着剤が塗布された後に、リフロー炉での加
熱が行われる。このような加熱によって導電性接着剤は
溶融し、チップ型半導体発光装置１０は回路基板と導電
性を保った状態で固着される。When mounting the chip-type semiconductor light emitting device 10 on a circuit board (not shown) such as a motherboard, first, the terminal electrodes 12a and 12b and the wiring pattern on the circuit board are brought into contact with each other. Type semiconductor light emitting device 10
Is disposed on the circuit board. Subsequently, the terminal electrodes 12a,
After a conductive adhesive such as cream solder is applied to the wiring pattern 12b and the wiring pattern on the circuit board, heating is performed in a reflow furnace. The conductive adhesive is melted by such heating, and the chip-type semiconductor light emitting device 10 is fixed to the circuit board while maintaining conductivity.
【００１８】なお、チップ基板１１の形成素材として
は、絶縁性・耐熱性に優れたものであれば特に限定はな
く、フェノール樹脂、ジアリルフタレート樹脂、ケイ素
樹脂、エポキシ樹脂、ポリイミド、ビスマレイミドトリ
アジン樹脂（ＢＴレジン）等の熱硬化性樹脂や、フッ素
樹脂、ポリカーボネート、ポリスルホン、変性ポリフェ
ニレンエーテル、ポリフェニレンスルフィド等の熱可塑
性樹脂を用いることができる。中でも、ガラス繊維を含
有したエポキシ樹脂やＢＴレジンが好適である。The material for forming the chip substrate 11 is not particularly limited as long as it is excellent in insulation and heat resistance. Phenol resin, diallyl phthalate resin, silicon resin, epoxy resin, polyimide, bismaleimide triazine resin Thermosetting resins such as (BT resin) and thermoplastic resins such as fluororesin, polycarbonate, polysulfone, modified polyphenylene ether, and polyphenylene sulfide can be used. Among them, epoxy resin and BT resin containing glass fiber are preferable.
【００１９】また、端子電極１２ａ、１２ｂの形成素材
としては、導電性を有するものであれば特に限定はな
く、従来公知の導電性素材を使用することができる。中
でも、導電性や加工性に優れた金や銅などの金属材料を
用いることが好ましい。The material for forming the terminal electrodes 12a and 12b is not particularly limited as long as it has conductivity, and a conventionally known conductive material can be used. Among them, it is preferable to use a metal material such as gold or copper excellent in conductivity and workability.
【００２０】上記した端子電極１２ａ、１２ｂのうち、
一方の端子電極１２ａの表面側にはダイボンディング部
（不図示）が形成されており、該ダイボンディング部に
は半導体発光素子１３の下面電極（不図示）がダイボン
ディングされている。また、他方の端子電極１２ｂの表
面側にはワイヤボンディング部（不図示）が形成されて
おり、該ワイヤボンディング部と半導体発光素子１３の
上面電極（不図示）とがボンディングワイヤ１４によっ
て結線されている。なお、本発明で使用可能な半導体発
光素子１３に特段の限定はなく、従来公知の半導体発光
素子（例えば、Ｓｉ系、ＧａＡｓ系、ＧａＡｌＡｓ系、
ＩｎＰ系、ＡｌＩｎＧａＰ系、ＺｎＳｅ系などの発光ダ
イオード）を使用することができる。Of the terminal electrodes 12a and 12b described above,
A die bonding portion (not shown) is formed on the surface side of one terminal electrode 12a, and a lower surface electrode (not shown) of the semiconductor light emitting element 13 is die-bonded to the die bonding portion. Further, a wire bonding portion (not shown) is formed on the surface side of the other terminal electrode 12b, and the wire bonding portion and the upper surface electrode (not shown) of the semiconductor light emitting element 13 are connected by a bonding wire. I have. There is no particular limitation on the semiconductor light emitting device 13 that can be used in the present invention, and conventionally known semiconductor light emitting devices (for example, Si, GaAs, GaAlAs,
InP-based, AlInGaP-based, and ZnSe-based light-emitting diodes) can be used.
【００２１】また、上記した半導体発光素子１３及びボ
ンディングワイヤ１４は、外部環境との遮断等を目的と
して、モールド成形された透光性の樹脂封止体１５によ
って封止されている。樹脂封止体１５の形成素材として
は、エポキシ樹脂や不飽和ポリエステル樹脂、シリコー
ン樹脂、ユリア・メラミン樹脂などを用いることができ
る。中でも、透光性に優れたエポキシ樹脂が好適であ
る。なお、本図では樹脂封止体１５の側断面を台形状と
した場合を例示したが、樹脂封止体１５の形状はこれに
限定されるものではなく、チップ型半導体発光装置１０
が搭載される器具や部品の形状などから適宜決定すれば
よい。Further, the semiconductor light emitting element 13 and the bonding wire 14 are sealed by a molded translucent resin sealing body 15 for the purpose of shielding the external environment and the like. As a material for forming the resin sealing body 15, an epoxy resin, an unsaturated polyester resin, a silicone resin, a urea-melamine resin, or the like can be used. Among them, an epoxy resin having excellent translucency is preferable. In this figure, the case where the side cross section of the resin sealing body 15 is trapezoidal is illustrated, but the shape of the resin sealing body 15 is not limited to this, and the chip type semiconductor light emitting device 10
May be determined as appropriate from the shape of the instrument or component on which is mounted.
【００２２】ここで、本実施形態のチップ型半導体発光
装置１０では、上記構成に加えて、端子電極１２ａ上に
固着された半導体発光素子１３の直下に位置するチップ
基板１１の一部分に、該チップ基板１１の表面から裏面
に至るセラミック製放熱部材１６（以下、セラミックコ
ア１６と呼ぶ）が設けられている。Here, in the chip type semiconductor light emitting device 10 of this embodiment, in addition to the above configuration, the chip type semiconductor light emitting device 10 is provided on a part of the chip substrate 11 located immediately below the semiconductor light emitting element 13 fixed on the terminal electrode 12a. A ceramic heat dissipating member 16 (hereinafter, referred to as a ceramic core 16) extending from the front surface to the rear surface of the substrate 11 is provided.
【００２３】このような構成とすることにより、チップ
型半導体発光装置１０の反射効率を低下させることな
く、半導体発光素子１３から発生する熱量を効率的に装
置外部へ発散することができる。従って、半導体発光素
子１３の温度上昇に伴う発光効率低下や輝度低下を抑
え、チップ型半導体発光装置１０から放出される光の色
調変化を低減することが可能となる。特に、熱に弱い半
導体発光素子（例えば、ＺｎＳｅ系の発光ダイオード）
を搭載したチップ型半導体発光装置に本発明を適用すれ
ば、発熱による半導体発光素子の急速な劣化を抑制する
ことができる。With this configuration, the amount of heat generated from the semiconductor light emitting element 13 can be efficiently radiated to the outside of the device without reducing the reflection efficiency of the chip type semiconductor light emitting device 10. Accordingly, it is possible to suppress a decrease in luminous efficiency and a decrease in luminance due to a rise in the temperature of the semiconductor light emitting element 13, and to reduce a change in color tone of light emitted from the chip-type semiconductor light emitting device 10. In particular, semiconductor light-emitting elements that are weak to heat (for example, ZnSe-based light-emitting diodes)
If the present invention is applied to a chip-type semiconductor light emitting device equipped with a semiconductor device, rapid deterioration of the semiconductor light emitting element due to heat generation can be suppressed.
【００２４】また、チップ型半導体発光装置１０を回路
基板上にハンダ付けする際にも、端子電極１２ａ、１２
ｂ間の短絡を起こすおそれが少ないため、チップ基板の
裏面に導電性の放熱用ランドや放熱板を設けた従来のチ
ップ型半導体発光装置に比べて、歩留まりの向上を実現
することができる。When the chip type semiconductor light emitting device 10 is soldered on a circuit board, the terminal electrodes 12a, 12
Since the possibility of short circuit between b is small, the yield can be improved as compared with the conventional chip-type semiconductor light-emitting device in which conductive heat-radiating lands or heat-radiating plates are provided on the back surface of the chip substrate.
【００２５】なお、本実施形態のチップ型半導体発光装
置１０では、セラミックコア１６の形成素材としてシリ
カアルミナ系の液体セラミックを用いている。このよう
に液体セラミックから成るセラミックコア１６であれ
ば、チップ基板１１の表面から裏面に至るスルーホール
を形成し、該スルーホールの一端面（表面側）を端子電
極１２ａで塞ぐとともに、他端面側（裏面側）から液体
セラミックを注入して乾燥させるといった方法によっ
て、極めて容易にセラミックコア１６を形成することが
できる。従って、チップ型半導体発光装置１０の製造工
程が不必要に複雑化されることがなく、製品の歩留まり
が低減するおそれも少ない。In the chip type semiconductor light emitting device 10 of this embodiment, a silica-alumina-based liquid ceramic is used as a material for forming the ceramic core 16. In the case of the ceramic core 16 made of liquid ceramic as described above, a through hole is formed from the front surface to the back surface of the chip substrate 11, one end surface (front surface side) of the through hole is closed by the terminal electrode 12a, and the other end surface is formed. The ceramic core 16 can be formed very easily by a method of injecting and drying liquid ceramic from the (back side) side. Therefore, the manufacturing process of the chip-type semiconductor light emitting device 10 is not unnecessarily complicated, and there is little possibility that the product yield is reduced.
【００２６】また、シリカアルミナ系の液体セラミック
は、単に加工性に富むだけでなく、優れた熱伝導性や熱
放射性を備えた素材である。従って、シリカアルミナ系
の液体セラミックから成るセラミックコア１６であれ
ば、半導体発光素子１３から発生する熱量を極めて効率
的に装置外部へ発散することができる。さらに、シリカ
アルミナ系の液体セラミックは、耐熱性やチップ基板１
１との密着性にも優れているため、チップ型半導体発光
装置１０の歩留まり向上を図ることができる。The silica-alumina-based liquid ceramic is a material having not only excellent workability but also excellent heat conductivity and heat radiation. Therefore, if the ceramic core 16 is made of a silica-alumina-based liquid ceramic, the amount of heat generated from the semiconductor light emitting element 13 can be diffused to the outside of the device very efficiently. Further, the silica-alumina-based liquid ceramic has heat resistance and chip substrate 1
1, the yield of the chip type semiconductor light emitting device 10 can be improved.
【００２７】さらに、チップ基板１１の裏面側に露出す
るセラミックコア１６の一端面形状は、外気との接触面
積が大きい形状（例えば、波形形状や凹凸形状）とすれ
ばよい。このような構成とすることにより、半導体発光
素子１３から発生する熱量をより効率的に装置外部へ発
散することができる。Further, the shape of one end face of the ceramic core 16 exposed on the back side of the chip substrate 11 may be a shape having a large contact area with the outside air (for example, a corrugated shape or an uneven shape). With such a configuration, the amount of heat generated from the semiconductor light emitting element 13 can be more efficiently radiated to the outside of the device.
【００２８】なお、放熱特性の向上のみを追求するなら
ば、セラミックコア１６の横断面積はより大きい方が望
ましい。ただし、チップ基板１１の強度やコストとのバ
ランスを考慮して、本実施形態のチップ型半導体発光装
置１０では、セラミックコア１６の横断面積を、端子電
極１２ａ上に固着された半導体発光素子１３の直下部分
をカバーする程度の大きさとしている。If only the improvement of the heat radiation characteristic is pursued, it is desirable that the cross-sectional area of the ceramic core 16 is larger. However, in consideration of the balance between the strength and the cost of the chip substrate 11, in the chip-type semiconductor light-emitting device 10 of the present embodiment, the cross-sectional area of the ceramic core 16 is set to the width of the semiconductor light-emitting element 13 fixed on the terminal electrode 12a. It is large enough to cover the area directly below.
【００２９】続いて、本発明に係るチップ型半導体発光
装置の第２実施形態として、ここでは、本発明を注型タ
イプのチップ型半導体発光装置に適用した場合を例に挙
げて説明を行う。図２は本発明に係るチップ型半導体発
光装置の第２実施形態を示す模式図である。なお、本図
中の（ａ）はチップ型半導体発光装置２０を前上方から
俯瞰した概略斜視図であり、（ｂ）は概略斜視図（ａ）
中の一点鎖線Ａ−Ａ’でチップ型半導体発光装置２０を
切断した場合に現れる縦断面図である。また、（ｃ）は
チップ型半導体発光装置２０を下方から見た裏面図であ
る。Next, as a second embodiment of the chip-type semiconductor light-emitting device according to the present invention, a case where the present invention is applied to a cast-type chip-type semiconductor light-emitting device will be described as an example. FIG. 2 is a schematic diagram showing a second embodiment of the chip type semiconductor light emitting device according to the present invention. (A) in this figure is a schematic perspective view of the chip-type semiconductor light emitting device 20 as viewed from the upper front, and (b) is a schematic perspective view (a).
It is a longitudinal cross-sectional view which appears when the chip type semiconductor light emitting device 20 is cut | disconnected by the alternate long and short dash line AA '. (C) is a rear view of the chip-type semiconductor light emitting device 20 as viewed from below.
【００３０】本図に示すチップ型半導体発光装置２０で
は、平面視長矩形状をした絶縁性のチップ基板２１の長
手方向（紙面左右方向）両端部の表面側に、一対の表面
端子電極２２ａ、２２ｂが形成されている。また、長手
方向両端部の裏面側には、表面端子電極２２ａ、２２ｂ
と対向する位置に、一対の裏面端子電極２２ａ’、２２
ｂ’が形成されている。なお、裏面端子電極２２ａ’、
２２ｂ’は、軽量化及び材料削減の観点から図２（ｃ）
に示すような形状に加工されている。In the chip-type semiconductor light-emitting device 20 shown in FIG. 1, a pair of surface terminal electrodes 22a and 22b are provided on both sides in the longitudinal direction (left and right directions in the drawing) of an insulating chip substrate 21 having a rectangular shape in plan view. Are formed. In addition, front terminal electrodes 22a, 22b
A pair of back terminal electrodes 22a ', 22
b ′ is formed. The back terminal electrode 22a ',
FIG. 2 (c) shows 22b 'from the viewpoint of weight reduction and material reduction.
It is processed into the shape shown in Fig.
【００３１】さらに、チップ基板２１の長手方向両端部
には、半円筒形状の窪みから成るスルーホール２７ａ、
２７ｂが設けられている。スルーホール２７ａ、２７ｂ
の内周面には無電解メッキ等による導電性被膜が形成さ
れており、上記した表面端子電極２２ａ、２２ｂと裏面
端子電極２２ａ’、２２ｂ’は、それぞれスルーホール
２７ａ、２７ｂを介して互いに導通されている。Further, through-holes 27a formed of semi-cylindrical depressions are provided at both ends in the longitudinal direction of the chip substrate 21.
27b are provided. Through holes 27a, 27b
A conductive coating is formed on the inner peripheral surface by electroless plating or the like. Have been.
【００３２】上記した表面端子電極２２ａ、２２ｂのう
ち、一方の表面端子電極２２ａにはダイボンディング部
（不図示）が形成されており、該ダイボンディング部に
は半導体発光素子２３の下面電極（不図示）がダイボン
ディングされている。また、他方の表面端子電極２２ｂ
にはワイヤボンディング部（不図示）が形成されてお
り、該ワイヤボンディング部と半導体発光素子２３の上
面電極（不図示）とがボンディングワイヤ２４によって
結線されている。A die bonding portion (not shown) is formed on one of the surface terminal electrodes 22a and 22b, and the lower surface electrode (not shown) of the semiconductor light emitting element 23 is formed on the die bonding portion. (Shown) is die-bonded. Also, the other surface terminal electrode 22b
Is formed with a wire bonding portion (not shown), and the wire bonding portion and an upper surface electrode (not shown) of the semiconductor light emitting element 23 are connected by a bonding wire 24.
【００３３】さらに、チップ型半導体発光装置２０の表
面側には、半導体発光素子２３とボンディングワイヤ２
４を取り囲むようにして、一側面に開口部を有するリフ
レクタケース２８が装着されている。また、半導体発光
素子２３及びボンディングワイヤ２４を外部環境から遮
断するために、リフレクタケース２８の内周面側には透
光性の樹脂封止体２５が充填されている。このような構
成とすることにより、半導体発光素子２３から放射され
る光の指向性を高めることができる。Further, on the front side of the chip type semiconductor light emitting device 20, a semiconductor light emitting element 23 and a bonding wire 2
A reflector case 28 having an opening on one side is mounted so as to surround the reflector case 4. Further, in order to shield the semiconductor light emitting element 23 and the bonding wires 24 from the external environment, a translucent resin sealing body 25 is filled on the inner peripheral surface side of the reflector case 28. With such a configuration, the directivity of light emitted from the semiconductor light emitting element 23 can be improved.
【００３４】上記したリフレクタケース２８の形成素材
としては、エポキシ樹脂等の樹脂封止体２５を硬化させ
るための加熱（約２６０℃）に耐え得るように、耐熱性
の高い液晶ポリマーや金属材料などが好適に用いられて
いる。ただし、リフレクタケース２８を反射率の高くな
い素材で形成した場合には、その内周面に白色インクを
塗布するかメッキを施すことで、反射率を向上させてお
く方が望ましい。As a material for forming the above-mentioned reflector case 28, a liquid crystal polymer or a metal material having high heat resistance so as to withstand heating (about 260 ° C.) for curing the resin sealing body 25 such as epoxy resin. Are preferably used. However, when the reflector case 28 is formed of a material having a low reflectance, it is preferable to improve the reflectance by applying white ink or plating on the inner peripheral surface.
【００３５】なお、本図に示すリフレクタケース２８
は、その内周面が開口部から奥側に向けて徐々に狭くな
るような傾斜を有する形状としたが、リフレクタケース
２８の形状は半導体発光素子２３から放射される光を一
側面方向に出射できる形状であれば特に限定はなく、一
側面に開口部を有する直方体の枡型などにしてもよい。The reflector case 28 shown in FIG.
Has a shape such that the inner peripheral surface gradually becomes narrower from the opening toward the back side, but the shape of the reflector case 28 emits light emitted from the semiconductor light emitting element 23 in one side direction. There is no particular limitation as long as the shape can be achieved, and a rectangular parallelepiped square shape having an opening on one side may be used.
【００３６】ここで、本実施形態のチップ型半導体発光
装置２０では、前述した第１実施形態と同様、表面端子
電極２２ａ上に固着された半導体発光素子２３の直下に
位置するチップ基板２１の一部分に、該チップ基板２１
の表面から裏面に至るセラミック製放熱部材２６（以
下、セラミックコア２６と呼ぶ）が設けられている。な
お、セラミックコア２６の形成素材、形成方法、露出面
の形状等は、全て前述の第１実施形態と同様である。Here, in the chip-type semiconductor light-emitting device 20 of this embodiment, as in the first embodiment, a part of the chip substrate 21 located immediately below the semiconductor light-emitting element 23 fixed on the surface terminal electrode 22a. The chip substrate 21
Is provided with a ceramic heat dissipating member 26 (hereinafter, referred to as a ceramic core 26) extending from the front surface to the back surface. The material for forming the ceramic core 26, the forming method, the shape of the exposed surface, and the like are all the same as those in the first embodiment.
【００３７】このような構成とすることにより、前述の
第１実施形態と同様、チップ型半導体発光装置２０の反
射効率を低下させることなく、半導体発光素子２３から
発生する熱量を効率的に装置外部へ発散することができ
る。従って、半導体発光素子２３の温度上昇に伴う半導
体発光素子２３の発光効率低下や輝度低下が抑えられる
ので、チップ型半導体発光装置２０から放出される光の
色調変化を低減することが可能となる。また、回路基板
へのハンダ付けを行う際にも、裏面端子電極２２ａ’、
２２ｂ’間の短絡を起こすおそれが少ないため、チップ
基板の裏面に導電性の放熱用ランドや放熱板を設けた従
来のチップ型半導体発光装置に比べて、歩留まりの向上
を図ることができる。With such a configuration, similarly to the first embodiment, the amount of heat generated from the semiconductor light emitting element 23 can be efficiently reduced outside the device without reducing the reflection efficiency of the chip type semiconductor light emitting device 20. Can diverge to Accordingly, a decrease in luminous efficiency and a decrease in luminance of the semiconductor light emitting element 23 due to a rise in the temperature of the semiconductor light emitting element 23 can be suppressed, so that a change in color tone of light emitted from the chip type semiconductor light emitting device 20 can be reduced. Also, when soldering to a circuit board, the back terminal electrode 22a ',
Since there is little possibility that a short circuit occurs between the chips 22b ', the yield can be improved as compared with a conventional chip-type semiconductor light emitting device in which a conductive radiating land or a radiating plate is provided on the back surface of the chip substrate.
【００３８】なお、上記した第１、第２実施形態では、
いわゆるワイヤボンディング方式のチップ型半導体発光
装置に本発明を適用した場合を例に挙げて説明を行った
が、本発明の適用対象はこれに限定されることはなく、
ボンディングワイヤを用いずに半導体発光素子を端子電
極に接続するノンワイヤボンディング方式のチップ型半
導体発光装置にも、本発明は適用可能である。In the first and second embodiments described above,
The case where the present invention is applied to a so-called wire bonding type chip type semiconductor light emitting device has been described as an example, but the application target of the present invention is not limited to this.
The present invention is also applicable to a chip-type semiconductor light emitting device of a non-wire bonding type in which a semiconductor light emitting element is connected to a terminal electrode without using a bonding wire.
【００３９】また、上記した第１、第２実施形態では、
半導体発光素子を１つだけ搭載したチップ型半導体発光
装置に本発明を適用した場合を例に挙げて説明を行った
が、本発明の適用対象はこれに限定されることはなく、
半導体発光素子を２つ以上搭載したチップ型半導体発光
装置にも、本発明は適用可能である。In the first and second embodiments described above,
Although the case where the present invention is applied to a chip type semiconductor light emitting device equipped with only one semiconductor light emitting element has been described as an example, the application target of the present invention is not limited to this.
The present invention is also applicable to a chip type semiconductor light emitting device in which two or more semiconductor light emitting elements are mounted.
【００４０】[0040]
【発明の効果】上記したように、本発明に係るチップ型
半導体発光装置は、絶縁性のチップ基板と、該チップ基
板の表面両端部に設けられた一対の第１、第２端子電極
と、自身の上面及び下面にそれぞれ電極が形成された半
導体発光素子と、を有し、前記半導体発光素子の下面電
極が第１端子電極上に導通可能に固着されるとともに、
上面電極が第２端子電極に接続され、かつ該半導体発光
素子が透光性樹脂で封止されて成るチップ型半導体発光
装置において、第１端子電極上に固着された前記半導体
発光素子の直下に位置する前記チップ基板の一部分に、
該チップ基板の表面から裏面に至るセラミック製の放熱
部材を設けた構成としている。As described above, the chip-type semiconductor light emitting device according to the present invention comprises an insulating chip substrate, a pair of first and second terminal electrodes provided at both ends of the surface of the chip substrate, and A semiconductor light-emitting element having electrodes formed on its upper and lower surfaces, respectively, and the lower electrode of the semiconductor light-emitting element is conductively fixed on the first terminal electrode,
In a chip-type semiconductor light-emitting device in which an upper electrode is connected to a second terminal electrode and the semiconductor light-emitting element is sealed with a translucent resin, the chip-type semiconductor light-emitting device is disposed directly below the semiconductor light-emitting element fixed on the first terminal electrode. On a part of the chip substrate located,
A structure is provided in which a ceramic heat radiating member is provided from the front surface to the back surface of the chip substrate.
【００４１】このような構成とすることにより、チップ
型半導体発光装置の反射効率を低下させることなく、半
導体発光素子から発生する熱量を効率的に装置外部へ発
散することができる。従って、半導体発光素子の温度上
昇に伴う発光効率低下や輝度低下を抑え、チップ型半導
体発光装置から放出される光の色調変化を低減すること
が可能となる。特に、熱に弱い半導体発光素子（例え
ば、ＺｎＳｅ系の発光ダイオード）を搭載したチップ型
半導体発光装置に本発明を適用すれば、発熱による半導
体発光素子の急速な劣化を抑制することができる。With this configuration, the amount of heat generated from the semiconductor light emitting element can be efficiently radiated to the outside of the device without lowering the reflection efficiency of the chip type semiconductor light emitting device. Accordingly, it is possible to suppress a decrease in luminous efficiency and a decrease in luminance due to a rise in temperature of the semiconductor light emitting element, and to reduce a change in color tone of light emitted from the chip type semiconductor light emitting device. In particular, if the present invention is applied to a chip-type semiconductor light emitting device equipped with a semiconductor light emitting element (for example, a ZnSe-based light emitting diode) that is vulnerable to heat, rapid deterioration of the semiconductor light emitting element due to heat generation can be suppressed.
【００４２】また、チップ型半導体発光装置を回路基板
上にハンダ付けする際にも、第１、第２端子電極間の短
絡を起こすおそれが少ないため、チップ基板の裏面に導
電性の放熱用ランドや放熱板を設けた従来のチップ型半
導体発光装置に比べて、歩留まりの向上を実現すること
ができる。Also, when the chip type semiconductor light emitting device is soldered on the circuit board, a short circuit between the first and second terminal electrodes is less likely to occur. The yield can be improved as compared with a conventional chip-type semiconductor light emitting device provided with a heat sink and a heat sink.
【００４３】なお、上記構成から成るチップ型半導体発
光装置では、前記放熱部材を液体セラミックによって形
成するとよい。このように液体セラミックから成る放熱
部材であれば、チップ基板の表面から裏面に至るスルー
ホールを形成し、該スルーホールの一端面（表面側）を
第１端子電極で塞ぐとともに、他端面側（裏面側）から
液体セラミックを注入して乾燥させるといった方法によ
って、極めて容易に放熱部材を形成することができる。
従って、チップ型半導体発光装置の製造工程が不必要に
複雑化されることがなく、製品の歩留まりが低減するお
それも少ない。In the chip-type semiconductor light emitting device having the above structure, the heat radiating member may be formed of liquid ceramic. In the case of the heat dissipating member made of liquid ceramic as described above, a through hole from the front surface to the back surface of the chip substrate is formed, and one end surface (front surface side) of the through hole is closed with the first terminal electrode, and the other end surface ( The heat radiating member can be formed very easily by a method of injecting and drying the liquid ceramic from the back side).
Therefore, the manufacturing process of the chip-type semiconductor light emitting device is not unnecessarily complicated, and the yield of products is less likely to be reduced.
【００４４】また、上記構成から成るチップ型半導体発
光装置では、前記放熱部材をシリカアルミナ系セラミッ
クによって形成するとよい。特に、シリカアルミナ系の
液体セラミックは、単に加工性に富むだけでなく、優れ
た熱伝導性や熱放射性を備えた素材であるため、シリカ
アルミナ系の液体セラミックから成る放熱部材であれ
ば、半導体発光素子から発生する熱量を極めて効率的に
装置外部へ発散することができる。さらに、シリカアル
ミナ系の液体セラミックは、耐熱性やチップ基板との密
着性にも優れているため、チップ型半導体発光装置の歩
留まり向上を図ることができる。In the chip-type semiconductor light-emitting device having the above-mentioned structure, it is preferable that the heat radiating member is formed of silica-alumina-based ceramic. In particular, since the silica-alumina-based liquid ceramic is a material having not only excellent workability but also excellent heat conductivity and heat radiation, a heat-dissipating member made of the silica-alumina-based liquid ceramic can be used as a semiconductor. The amount of heat generated from the light emitting element can be very efficiently dissipated to the outside of the device. Further, since the silica-alumina-based liquid ceramic is excellent in heat resistance and adhesion to the chip substrate, the yield of the chip-type semiconductor light emitting device can be improved.
【００４５】また、上記構成から成るチップ型半導体発
光装置では、前記チップ基板の裏面側に露出する前記放
熱部材の一端面形状を、外気との接触面積が大きい形状
にするとよい。このような構成とすることにより、半導
体発光素子から発生する熱量をより効率的に装置外部へ
発散することができる。In the chip-type semiconductor light-emitting device having the above-mentioned structure, it is preferable that the shape of one end face of the heat radiating member exposed on the back surface side of the chip substrate is a shape having a large contact area with the outside air. With such a configuration, the amount of heat generated from the semiconductor light emitting element can be more efficiently radiated to the outside of the device.
【図１】 本発明に係るチップ型半導体発光装置の第１
実施形態を示す模式図である。FIG. 1 shows a first embodiment of a chip type semiconductor light emitting device according to the present invention.
It is a schematic diagram which shows an embodiment.
【図２】 本発明に係るチップ型半導体発光装置の第２
実施形態を示す模式図である。FIG. 2 shows a second example of the chip type semiconductor light emitting device according to the present invention.
It is a schematic diagram which shows an embodiment.
【図３】 従来のチップ型半導体発光装置の一構成例を
示す模式図である。FIG. 3 is a schematic diagram showing one configuration example of a conventional chip-type semiconductor light emitting device.
１０、２０ チップ型半導体発光装置 １１、２１ チップ基板 １２ａ、１２ｂ 端子電極 ２２ａ、２２ｂ 表面端子電極 ２２ａ’、２２ｂ’ 裏面端子電極 １３、２３ 半導体発光素子 １４、２４ ボンディングワイヤ １５、２５ 樹脂封止体 １６、２６ セラミック製放熱部材（セラミックコ
ア） ２７ａ、２７ｂ スルーホール ２８ リフレクタケース10, 20 Chip type semiconductor light emitting device 11, 21 Chip substrate 12a, 12b Terminal electrode 22a, 22b Front terminal electrode 22a ', 22b' Back terminal electrode 13, 23 Semiconductor light emitting element 14, 24 Bonding wire 15, 25 Resin sealing body 16, 26 Ceramic heat dissipation member (ceramic core) 27a, 27b Through hole 28 Reflector case
Claims (4)
面両端部に設けられた一対の第１、第２端子電極と、自
身の上面及び下面にそれぞれ電極が形成された半導体発
光素子と、を有し、前記半導体発光素子の下面電極が第
１端子電極上に導通可能に固着されるとともに、上面電
極が第２端子電極に接続され、かつ該半導体発光素子が
透光性樹脂で封止されて成るチップ型半導体発光装置に
おいて、 第１端子電極上に固着された前記半導体発光素子の直下
に位置する前記チップ基板の一部分に、該チップ基板の
表面から裏面に至るセラミック製の放熱部材を設けたこ
とを特徴とするチップ型半導体発光装置。An insulating chip substrate, a pair of first and second terminal electrodes provided at both ends of a surface of the chip substrate, and a semiconductor light emitting element having electrodes formed on its upper and lower surfaces, respectively. A lower electrode of the semiconductor light emitting element is conductively fixed on the first terminal electrode, an upper electrode is connected to the second terminal electrode, and the semiconductor light emitting element is sealed with a translucent resin. A chip-type semiconductor light emitting device, wherein a ceramic heat radiating member extends from a surface to a back surface of the chip substrate on a part of the chip substrate located immediately below the semiconductor light emitting element fixed on a first terminal electrode; A chip-type semiconductor light emitting device characterized by comprising:
成したことを特徴とする請求項１に記載のチップ型半導
体発光装置。2. The chip type semiconductor light emitting device according to claim 1, wherein said heat radiating member is formed of liquid ceramic.
クによって形成したことを特徴とする請求項１または請
求項２に記載のチップ型半導体発光装置。3. The chip-type semiconductor light emitting device according to claim 1, wherein said heat radiation member is formed of silica-alumina-based ceramic.
熱部材の一端面形状を外気との接触面積が大きい形状と
したことを特徴とする請求項１〜請求項３のいずれかに
記載のチップ型半導体発光装置。4. The device according to claim 1, wherein one end face of the heat radiation member exposed on the back side of the chip substrate has a shape having a large contact area with outside air. Chip type semiconductor light emitting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001169097A JP2002368277A (en) | 2001-06-05 | 2001-06-05 | Chip semiconductor light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001169097A JP2002368277A (en) | 2001-06-05 | 2001-06-05 | Chip semiconductor light-emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002368277A true JP2002368277A (en) | 2002-12-20 |
Family
ID=19011213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001169097A Pending JP2002368277A (en) | 2001-06-05 | 2001-06-05 | Chip semiconductor light-emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002368277A (en) |
Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004112155A1 (en) * | 2003-06-11 | 2004-12-23 | Rohm Co., Ltd. | Optical semiconductor device |
| JP2006165141A (en) * | 2004-12-06 | 2006-06-22 | Stanley Electric Co Ltd | Surface-mounting led |
| WO2006106901A1 (en) * | 2005-04-01 | 2006-10-12 | Matsushita Electric Industrial Co., Ltd. | Led component and method for manufacturing same |
| JP2006287020A (en) * | 2005-04-01 | 2006-10-19 | Matsushita Electric Ind Co Ltd | Led assembly and manufacturing method thereof |
| JP2006339559A (en) * | 2005-06-06 | 2006-12-14 | Matsushita Electric Ind Co Ltd | Led and its manufacturing method |
| JP2009522804A (en) * | 2006-01-06 | 2009-06-11 | エルジー イノテック カンパニー リミテッド | Light emitting diode package, method for manufacturing the same, and backlight unit including the same |
| US7554129B2 (en) | 2004-06-10 | 2009-06-30 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| JP2011009789A (en) * | 2003-03-10 | 2011-01-13 | Toyoda Gosei Co Ltd | Solid element device |
| JP2011029665A (en) * | 2006-01-10 | 2011-02-10 | Samsung Led Co Ltd | Light-emitting chip, led package, backlight for liquid crystal display, liquid crystal display, and illumination |
| US8070984B2 (en) | 2004-06-10 | 2011-12-06 | Seoul Semiconductor Co., Ltd. | Luminescent material |
| US8071988B2 (en) | 2004-05-06 | 2011-12-06 | Seoul Semiconductor Co., Ltd. | White light emitting device comprising a plurality of light emitting diodes with different peak emission wavelengths and a wavelength converter |
| JP2011529628A (en) * | 2008-07-29 | 2011-12-08 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Optoelectronic semiconductor elements |
| US8134165B2 (en) | 2007-08-28 | 2012-03-13 | Seoul Semiconductor Co., Ltd. | Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors |
| US8137589B2 (en) | 2007-08-22 | 2012-03-20 | Seoul Semiconductor Co., Ltd. | Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same |
| US8188492B2 (en) | 2006-08-29 | 2012-05-29 | Seoul Semiconductor Co., Ltd. | Light emitting device having plural light emitting diodes and at least one phosphor for emitting different wavelengths of light |
| JP2012134564A (en) * | 2004-09-10 | 2012-07-12 | Seoul Semiconductor Co Ltd | Light emitting element and manufacturing method of the same |
| US8273266B2 (en) | 2005-11-11 | 2012-09-25 | Seoul Semiconductor Co., Ltd. | Copper-alkaline-earth-silicate mixed crystal phosphors |
| US8308980B2 (en) | 2004-06-10 | 2012-11-13 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US8535564B2 (en) | 2009-06-24 | 2013-09-17 | Seoul Semiconductor, Co., Ltd. | Light emitting device employing luminescent substances with oxyorthosilicate luminophores |
| US8685766B2 (en) | 2003-03-10 | 2014-04-01 | Toyoda Gosei Co., Ltd. | Solid element device and method for manufacturing the same |
| US8703014B2 (en) | 2009-06-24 | 2014-04-22 | Seoul Semiconductor Co., Ltd. | Luminescent substances having Eu2+-doped silicate luminophores |
| KR101423451B1 (en) * | 2006-09-29 | 2014-07-25 | 서울반도체 주식회사 | Luminous element |
| US8847254B2 (en) | 2005-12-15 | 2014-09-30 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US9209162B2 (en) | 2004-05-13 | 2015-12-08 | Seoul Semiconductor Co., Ltd. | Light emitting device including RGB light emitting diodes and phosphor |
| JP2016004946A (en) * | 2014-06-18 | 2016-01-12 | ローム株式会社 | Optical device, mounting structure for optical device and method of manufacturing optical device |
| US9312246B2 (en) | 2006-03-31 | 2016-04-12 | Seoul Semiconductor Co., Ltd. | Light emitting device and lighting system having the same |
| JP2018160635A (en) * | 2017-03-23 | 2018-10-11 | ローム株式会社 | Semiconductor light-emitting device |
| US10615324B2 (en) | 2013-06-14 | 2020-04-07 | Cree Huizhou Solid State Lighting Company Limited | Tiny 6 pin side view surface mount LED |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6489547A (en) * | 1987-09-30 | 1989-04-04 | Ibiden Co Ltd | Board for mounting semiconductor element |
| JPH0786717A (en) * | 1993-09-17 | 1995-03-31 | Fujitsu Ltd | Printing wiring board structure |
| JPH07107690A (en) * | 1993-09-30 | 1995-04-21 | Toshiba Corp | Electric rotary machine |
| JPH09260539A (en) * | 1996-03-27 | 1997-10-03 | Matsushita Electric Ind Co Ltd | Sub-mounter and semiconductor device as well as manufacture thereof |
| JPH10335521A (en) * | 1997-05-28 | 1998-12-18 | Mitsubishi Electric Corp | Semiconductor device |
| JPH11112025A (en) * | 1997-10-03 | 1999-04-23 | Rohm Co Ltd | Chip type light emitting element |
| JPH11195794A (en) * | 1997-10-23 | 1999-07-21 | Siemens Ag | Photoelectric element and manufacture thereof |
| JPH11340639A (en) * | 1998-05-22 | 1999-12-10 | Matsushita Electric Ind Co Ltd | Cabinet for electronic apparatus |
| JP2000349344A (en) * | 1999-06-03 | 2000-12-15 | Toshiba Electronic Engineering Corp | Optical semiconductor package and its module |
-
2001
- 2001-06-05 JP JP2001169097A patent/JP2002368277A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6489547A (en) * | 1987-09-30 | 1989-04-04 | Ibiden Co Ltd | Board for mounting semiconductor element |
| JPH0786717A (en) * | 1993-09-17 | 1995-03-31 | Fujitsu Ltd | Printing wiring board structure |
| JPH07107690A (en) * | 1993-09-30 | 1995-04-21 | Toshiba Corp | Electric rotary machine |
| JPH09260539A (en) * | 1996-03-27 | 1997-10-03 | Matsushita Electric Ind Co Ltd | Sub-mounter and semiconductor device as well as manufacture thereof |
| JPH10335521A (en) * | 1997-05-28 | 1998-12-18 | Mitsubishi Electric Corp | Semiconductor device |
| JPH11112025A (en) * | 1997-10-03 | 1999-04-23 | Rohm Co Ltd | Chip type light emitting element |
| JPH11195794A (en) * | 1997-10-23 | 1999-07-21 | Siemens Ag | Photoelectric element and manufacture thereof |
| JPH11340639A (en) * | 1998-05-22 | 1999-12-10 | Matsushita Electric Ind Co Ltd | Cabinet for electronic apparatus |
| JP2000349344A (en) * | 1999-06-03 | 2000-12-15 | Toshiba Electronic Engineering Corp | Optical semiconductor package and its module |
Cited By (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8685766B2 (en) | 2003-03-10 | 2014-04-01 | Toyoda Gosei Co., Ltd. | Solid element device and method for manufacturing the same |
| JP2011009789A (en) * | 2003-03-10 | 2011-01-13 | Toyoda Gosei Co Ltd | Solid element device |
| KR100705485B1 (en) * | 2003-06-11 | 2007-04-09 | 롬 가부시키가이샤 | Optical semiconductor device |
| CN100401540C (en) * | 2003-06-11 | 2008-07-09 | 罗姆股份有限公司 | Optical semiconductor device |
| US7429759B2 (en) | 2003-06-11 | 2008-09-30 | Rohm Co., Ltd. | Optical semiconductor device with improved illumination efficiency |
| WO2004112155A1 (en) * | 2003-06-11 | 2004-12-23 | Rohm Co., Ltd. | Optical semiconductor device |
| US8071988B2 (en) | 2004-05-06 | 2011-12-06 | Seoul Semiconductor Co., Ltd. | White light emitting device comprising a plurality of light emitting diodes with different peak emission wavelengths and a wavelength converter |
| US11605762B2 (en) | 2004-05-13 | 2023-03-14 | Seoul Semiconductor Co., Ltd. | Light emitting device including RGB light emitting diodes and phosphor |
| US10916684B2 (en) | 2004-05-13 | 2021-02-09 | Seoul Semiconductor Co., Ltd. | Light emitting device including RGB light emitting diodes and phosphor |
| US10672956B2 (en) | 2004-05-13 | 2020-06-02 | Seoul Semiconductor Co., Ltd. | Light emitting device including RGB light emitting diodes and phosphor |
| US10186642B2 (en) | 2004-05-13 | 2019-01-22 | Seoul Semiconductor Co., Ltd. | Light emitting device including RGB light emitting diodes and phosphor |
| US9209162B2 (en) | 2004-05-13 | 2015-12-08 | Seoul Semiconductor Co., Ltd. | Light emitting device including RGB light emitting diodes and phosphor |
| US8308980B2 (en) | 2004-06-10 | 2012-11-13 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US8252203B2 (en) | 2004-06-10 | 2012-08-28 | Seoul Semiconductor Co., Ltd. | Luminescent material |
| US8070984B2 (en) | 2004-06-10 | 2011-12-06 | Seoul Semiconductor Co., Ltd. | Luminescent material |
| US8070983B2 (en) | 2004-06-10 | 2011-12-06 | Seoul Semiconductor Co., Ltd. | Luminescent material |
| US8900482B2 (en) | 2004-06-10 | 2014-12-02 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US7554129B2 (en) | 2004-06-10 | 2009-06-30 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US8075802B2 (en) | 2004-06-10 | 2011-12-13 | Seoul Semiconductor Co., Ltd. | Luminescent material |
| US8089084B2 (en) | 2004-06-10 | 2012-01-03 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US8318044B2 (en) | 2004-06-10 | 2012-11-27 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US8883040B2 (en) | 2004-06-10 | 2014-11-11 | Seoul Semiconductor Co., Ltd. | Luminescent material |
| US8158028B2 (en) | 2004-06-10 | 2012-04-17 | Seoul Semiconductor Co., Ltd. | Luminescent material |
| US8066909B2 (en) | 2004-06-10 | 2011-11-29 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| JP2012134564A (en) * | 2004-09-10 | 2012-07-12 | Seoul Semiconductor Co Ltd | Light emitting element and manufacturing method of the same |
| JP2006165141A (en) * | 2004-12-06 | 2006-06-22 | Stanley Electric Co Ltd | Surface-mounting led |
| JP4625972B2 (en) * | 2004-12-06 | 2011-02-02 | スタンレー電気株式会社 | Surface mount type LED |
| WO2006106901A1 (en) * | 2005-04-01 | 2006-10-12 | Matsushita Electric Industrial Co., Ltd. | Led component and method for manufacturing same |
| JP2006287020A (en) * | 2005-04-01 | 2006-10-19 | Matsushita Electric Ind Co Ltd | Led assembly and manufacturing method thereof |
| JP2006339559A (en) * | 2005-06-06 | 2006-12-14 | Matsushita Electric Ind Co Ltd | Led and its manufacturing method |
| US8273266B2 (en) | 2005-11-11 | 2012-09-25 | Seoul Semiconductor Co., Ltd. | Copper-alkaline-earth-silicate mixed crystal phosphors |
| US8847254B2 (en) | 2005-12-15 | 2014-09-30 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US8445926B2 (en) | 2006-01-06 | 2013-05-21 | Lg Innotek Co., Ltd. | LED package, method of fabricating the same, and backlight unit having the same |
| JP2009522804A (en) * | 2006-01-06 | 2009-06-11 | エルジー イノテック カンパニー リミテッド | Light emitting diode package, method for manufacturing the same, and backlight unit including the same |
| JP2011029665A (en) * | 2006-01-10 | 2011-02-10 | Samsung Led Co Ltd | Light-emitting chip, led package, backlight for liquid crystal display, liquid crystal display, and illumination |
| US9312246B2 (en) | 2006-03-31 | 2016-04-12 | Seoul Semiconductor Co., Ltd. | Light emitting device and lighting system having the same |
| US9576939B2 (en) | 2006-03-31 | 2017-02-21 | Seoul Semiconductor Co., Ltd. | Light emitting device and lighting system having the same |
| US11322484B2 (en) | 2006-03-31 | 2022-05-03 | Seoul Semiconductor Co., Ltd. | Light emitting device and lighting system having the same |
| US8188492B2 (en) | 2006-08-29 | 2012-05-29 | Seoul Semiconductor Co., Ltd. | Light emitting device having plural light emitting diodes and at least one phosphor for emitting different wavelengths of light |
| US8674380B2 (en) | 2006-08-29 | 2014-03-18 | Seoul Semiconductor Co., Ltd. | Light emitting device having plural light emitting diodes and plural phosphors for emitting different wavelengths of light |
| KR101423451B1 (en) * | 2006-09-29 | 2014-07-25 | 서울반도체 주식회사 | Luminous element |
| US8501040B2 (en) | 2007-08-22 | 2013-08-06 | Seoul Semiconductor Co., Ltd. | Non-stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same |
| US8137589B2 (en) | 2007-08-22 | 2012-03-20 | Seoul Semiconductor Co., Ltd. | Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same |
| US8134165B2 (en) | 2007-08-28 | 2012-03-13 | Seoul Semiconductor Co., Ltd. | Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors |
| US8431954B2 (en) | 2007-08-28 | 2013-04-30 | Seoul Semiconductor Co., Ltd. | Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors |
| US10580941B2 (en) | 2008-07-29 | 2020-03-03 | Osram Oled Gmbh | Optoelectronic semiconductor component |
| US9831394B2 (en) | 2008-07-29 | 2017-11-28 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
| US9099622B2 (en) | 2008-07-29 | 2015-08-04 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
| JP2011529628A (en) * | 2008-07-29 | 2011-12-08 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Optoelectronic semiconductor elements |
| US8535564B2 (en) | 2009-06-24 | 2013-09-17 | Seoul Semiconductor, Co., Ltd. | Light emitting device employing luminescent substances with oxyorthosilicate luminophores |
| US8703014B2 (en) | 2009-06-24 | 2014-04-22 | Seoul Semiconductor Co., Ltd. | Luminescent substances having Eu2+-doped silicate luminophores |
| US10615324B2 (en) | 2013-06-14 | 2020-04-07 | Cree Huizhou Solid State Lighting Company Limited | Tiny 6 pin side view surface mount LED |
| JP2016004946A (en) * | 2014-06-18 | 2016-01-12 | ローム株式会社 | Optical device, mounting structure for optical device and method of manufacturing optical device |
| JP2018160635A (en) * | 2017-03-23 | 2018-10-11 | ローム株式会社 | Semiconductor light-emitting device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2002368277A (en) | Chip semiconductor light-emitting device | |
| US7642704B2 (en) | Light-emitting diode with a base | |
| JP4305896B2 (en) | High brightness light emitting device and manufacturing method thereof | |
| US8053804B2 (en) | Backlight unit equipped with light emitting diodes | |
| US8017964B2 (en) | Light emitting device | |
| US20020097579A1 (en) | Semiconductor light emitting device | |
| JP2009522804A (en) | Light emitting diode package, method for manufacturing the same, and backlight unit including the same | |
| JP2007184542A (en) | Light-emitting module, manufacturing method thereof, and backlight apparatus using same | |
| JP2005158957A (en) | Light emitting device | |
| JP2006278934A (en) | Semiconductor light emitting device, its manufacturing method and semiconductor luminescence unit | |
| JP2004342870A (en) | Light emitting diode to be driven with large current | |
| KR20060134969A (en) | Surface mount light emitting chip package | |
| JP2004207367A (en) | Light emitting diode and light emitting diode arrangement plate | |
| JPH1146018A (en) | Surface mounted type light-emitting diode | |
| KR100610275B1 (en) | Power LED package and method for producing the same | |
| JP3856250B2 (en) | SMD type LED | |
| JP3886306B2 (en) | Chip-type semiconductor light-emitting device | |
| JP2006073699A (en) | Light emitting element accommodating package | |
| JP2816629B2 (en) | Light emitting device with built-in resistor | |
| KR101115403B1 (en) | Light emitting apparatus | |
| JP2009117124A (en) | Light source unit | |
| JP2008235493A (en) | Light-emitting element storage package | |
| KR100616413B1 (en) | Light emitting diode and method of manufacturing the same | |
| KR100985917B1 (en) | Lead Frame and Electronic Device of Effective Thermal Emission Structure for Very Large Current Optical Source Lamp and Manufacturing Method Thereof | |
| JP2002118215A (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080118 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101018 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101026 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20110301 |