TW200501456A - Light-emitting diode - Google Patents

Light-emitting diode

Info

Publication number
TW200501456A
TW200501456A TW093111316A TW93111316A TW200501456A TW 200501456 A TW200501456 A TW 200501456A TW 093111316 A TW093111316 A TW 093111316A TW 93111316 A TW93111316 A TW 93111316A TW 200501456 A TW200501456 A TW 200501456A
Authority
TW
Taiwan
Prior art keywords
light
emitting diode
electrode
dopant
namely
Prior art date
Application number
TW093111316A
Other languages
Chinese (zh)
Inventor
Hiroshi Kawazoe
Masahiro Orita
Hiroaki Yanagita
Satoshi Kobayashi
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200501456A publication Critical patent/TW200501456A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3018—AIIBVI compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3027—IV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A light-emitting diode with high luminous efficiency is disclosed which is free from deformation or defect of crystal caused by a dopant. The light-emitting diode emits no light of unnecessary wavelengths and has a wide selection of emission wavelengths. The light-emitting diode comprises a light-emitting layer composed of an ambipolar semiconductor containing no dopant, and an electron implanting electrode, namely an n electrode and a hole implanting electrode, namely a p electrode joined to the light-emitting layer.
TW093111316A 2003-04-23 2004-04-22 Light-emitting diode TW200501456A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003119065 2003-04-23

Publications (1)

Publication Number Publication Date
TW200501456A true TW200501456A (en) 2005-01-01

Family

ID=33308092

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093111316A TW200501456A (en) 2003-04-23 2004-04-22 Light-emitting diode

Country Status (7)

Country Link
US (1) US20060261350A1 (en)
EP (1) EP1622207A4 (en)
JP (1) JP4504309B2 (en)
KR (1) KR100746121B1 (en)
CN (1) CN100485977C (en)
TW (1) TW200501456A (en)
WO (1) WO2004095591A1 (en)

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KR100655894B1 (en) * 2004-05-06 2006-12-08 서울옵토디바이스주식회사 Light Emitting Device
KR100658700B1 (en) 2004-05-13 2006-12-15 서울옵토디바이스주식회사 Light emitting device with RGB diodes and phosphor converter
US8318044B2 (en) 2004-06-10 2012-11-27 Seoul Semiconductor Co., Ltd. Light emitting device
KR100665298B1 (en) 2004-06-10 2007-01-04 서울반도체 주식회사 Light emitting device
KR100665299B1 (en) * 2004-06-10 2007-01-04 서울반도체 주식회사 Luminescent material
KR101258397B1 (en) * 2005-11-11 2013-04-30 서울반도체 주식회사 Copper-Alkaline-Earth-Silicate mixed crystal phosphors
KR101055772B1 (en) * 2005-12-15 2011-08-11 서울반도체 주식회사 Light emitting device
JP5294565B2 (en) * 2006-03-17 2013-09-18 キヤノン株式会社 Light emitting device and method for manufacturing light emitting device
KR100875443B1 (en) 2006-03-31 2008-12-23 서울반도체 주식회사 Light emitting device
KR101258227B1 (en) 2006-08-29 2013-04-25 서울반도체 주식회사 Light emitting device
WO2009025469A2 (en) 2007-08-22 2009-02-26 Seoul Semiconductor Co., Ltd. Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same
KR101055769B1 (en) 2007-08-28 2011-08-11 서울반도체 주식회사 Light-emitting device adopting non-stoichiometric tetra-alkaline earth silicate phosphor
TWI367530B (en) * 2007-12-25 2012-07-01 Ind Tech Res Inst Chlorine, fluorine and lithium co-doped transparent conductive films and methods for fabricating the same
JP5059628B2 (en) * 2008-01-10 2012-10-24 株式会社日立製作所 Semiconductor device
JP5130996B2 (en) * 2008-03-28 2013-01-30 Ｔｄｋ株式会社 Light emitting element
KR101055762B1 (en) * 2009-09-01 2011-08-11 서울반도체 주식회사 Light-emitting device employing a light-emitting material having an oxyosilicate light emitter
DE102009030205A1 (en) * 2009-06-24 2010-12-30 Litec-Lp Gmbh Luminescent substance with europium-doped silicate luminophore, useful in LED, comprises alkaline-, rare-earth metal orthosilicate, and solid solution in form of mixed phases arranged between alkaline- and rare-earth metal oxyorthosilicate
TWI661575B (en) * 2018-07-20 2019-06-01 錼創顯示科技股份有限公司 Micro light emitting device and display apparatus
KR20200100899A (en) * 2019-02-18 2020-08-27 삼성디스플레이 주식회사 Display device

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CA1267965C (en) * 1985-07-26 1990-04-17 Double injection field effect transistors
JPS6486572A (en) * 1987-09-28 1989-03-31 Sharp Kk Amorphous thin film light emitting element
JPH02224377A (en) * 1989-02-27 1990-09-06 Meidensha Corp Manufacture of light emitting element
JPH04120775A (en) * 1990-09-12 1992-04-21 Hitachi Cable Ltd Tunnel junction light emitting element
JPH05259507A (en) * 1991-03-12 1993-10-08 Nippon Steel Corp Thin-film light-emitting element and manufacture thereof
JP3153292B2 (en) * 1991-11-11 2001-04-03 松下電器産業株式会社 Avalanche light emitting device
US5289112A (en) * 1992-09-21 1994-02-22 Hewlett-Packard Company Light-emitting diode array current power supply including switched cascode transistors
JPH06204562A (en) * 1992-12-28 1994-07-22 Kanegafuchi Chem Ind Co Ltd Blue luminescence device
US5422902A (en) * 1993-07-02 1995-06-06 Philips Electronics North America Corporation BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semiconductors
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JPH07231142A (en) * 1994-02-18 1995-08-29 Mitsubishi Electric Corp Semiconductor light emitting element
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JP3441059B2 (en) * 1999-12-10 2003-08-25 スタンレー電気株式会社 Semiconductor device and manufacturing method thereof
JP2002170985A (en) * 2000-09-19 2002-06-14 Natl Science Council Of Roc GREEN, BLUE OR WHITE AMORPHOUS p-i-n THIN FILM LIGHT EMITTING DIODE AND ITS FABRICATING METHOD
JP3940596B2 (en) * 2001-05-24 2007-07-04 松下電器産業株式会社 Illumination light source
TW502438B (en) * 2001-07-23 2002-09-11 Uni Light Technology Inc Semiconductor device with ohmic contact and method for producing the same
CN100382338C (en) * 2002-02-19 2008-04-16 Hoya株式会社 Light-emitting device of field-effect transistor type

Also Published As

Publication number Publication date
CN1791986A (en) 2006-06-21
WO2004095591A1 (en) 2004-11-04
WO2004095591B1 (en) 2005-01-27
EP1622207A1 (en) 2006-02-01
KR100746121B1 (en) 2007-08-03
JP4504309B2 (en) 2010-07-14
US20060261350A1 (en) 2006-11-23
CN100485977C (en) 2009-05-06
JPWO2004095591A1 (en) 2006-09-21
EP1622207A4 (en) 2007-08-08
KR20060006040A (en) 2006-01-18

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