TW200932695A - An apparatus for etching a glass wafer, and a glass sheet manufactured by the same - Google Patents
An apparatus for etching a glass wafer, and a glass sheet manufactured by the same Download PDFInfo
- Publication number
- TW200932695A TW200932695A TW098100164A TW98100164A TW200932695A TW 200932695 A TW200932695 A TW 200932695A TW 098100164 A TW098100164 A TW 098100164A TW 98100164 A TW98100164 A TW 98100164A TW 200932695 A TW200932695 A TW 200932695A
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- TW
- Taiwan
- Prior art keywords
- glass substrate
- etching
- etchant
- glass
- nozzle
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Liquid Crystal (AREA)
Abstract
Description
200932695 六、發明說明： 【發明所屬之技術領域】 本&明係關於一用於蝕刻玻璃基板以減少玻璃基板厚 度的器械， 而且更特別的是，關於一用於蝕刻玻璃基板的 器械，其中+ 固疋早元被提供在至少一玻璃基板下面相對 於地面以—祐+ λ 馆疋傾斜度可分開地固定並支撐該玻璃基板及 令^一咱' ''路留- 早70在該玻璃基板上以噴濺蝕刻劑到該玻璃基 板上以減》破璃基板厚度，因此而製造出玻璃薄板。 【先前技術】 因應目則資訊時代的發展，光電元件與裝置明顯地發 廣泛地分佈。特別的是，使用在電視或個人電腦以表 現影像的顯示裝置正經受加速的研究。 從而實行了更多研究在用於基板的玻璃薄板（也就是 顯不裝置一個必要的部分）及該玻璃薄板的製造方法上。 製造輕薄顯示平板的傳統方法一般包括機械拋光方法 與化學溼蝕刻方法。當機械拋光方法廣泛地使用在顯示裝 置早期發展的舞台，具有絕佳生產率的化學溼蝕刻方法最 近開始被使用在超細產品的需求上。 在屋蝕刻方法中，浸泡方法一開始被使用在用於薄膜 電晶體液晶顯示器（TFT-LCD)之細平板的製造上。噴濺方法 與噴射流方法比浸泡方法來得更先進，它們使用近似的原 理。喷減方法與噴射流方法與浸泡方法的不同之處在於與 供應蝕刻劑相關的巨觀原理上，它們擴散反應產物及移除 反應產物。 200932695 簡短地描述一下化學溼蝕刻方法，它使用了在攪拌完 蝕刻劑後，蝕刻劑主要成分（該主要成分像是：氫離子（H + )、 氟化氫（HF )與二氟化氫（HF2·))及玻璃基板主要成分（像 是0-Si-0(Si02))間的化學反應。這個反應根據下列的方程 式來執行。200932695 VI. Description of the Invention: [Technical Field] The present invention relates to an apparatus for etching a glass substrate to reduce the thickness of a glass substrate, and more particularly, to an apparatus for etching a glass substrate, wherein + 固疋早元 is provided under at least one glass substrate with respect to the ground with a gradient of -you + λ 疋 可 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定On the substrate, a etchant is sprayed onto the glass substrate to reduce the thickness of the glass substrate, thereby producing a glass sheet. [Prior Art] In response to the development of the information age, photovoltaic elements and devices are clearly distributed widely. In particular, display devices that use images displayed on televisions or personal computers are undergoing accelerated research. Thus, more research has been conducted on a glass sheet for a substrate (i.e., a necessary portion of the device) and a method of manufacturing the glass sheet. Conventional methods of manufacturing thin display panels generally include mechanical polishing methods and chemical wet etching methods. When the mechanical polishing method is widely used in the stage in which the display device was developed early, a chemical wet etching method with excellent productivity has recently been used in the demand for ultrafine products. In the house etching method, the immersion method is initially used in the manufacture of a thin plate for a thin film transistor liquid crystal display (TFT-LCD). The splatter method and the jet stream method are more advanced than the immersion method, and they use approximate principles. The spray reduction method differs from the jet flow method and the immersion method in that it fundamentally diffuses the reaction product and removes the reaction product. 200932695 A brief description of the chemical wet etching method, which uses the main components of the etchant after stirring the etchant (the main components are: hydrogen ion (H + ), hydrogen fluoride (HF) and hydrogen fluoride (HF 2 ·)) And the chemical reaction between the main components of the glass substrate (such as 0-Si-0 (Si02)). This reaction is performed according to the following equation.
Si02 + 4HF SiF4 + 2H2〇 使用包含HF的蝕刻劑之蝕刻玻璃基板的過程可以分成 下列五個步驟，這五個步驟決定了蝕刻的品質。在這五個 © 步驟中，i)蝕刻劑被擴散進入鄰接於玻璃基板的擴散層，ii) 蝕刻劑的成分被吸收進玻璃基板的表面，iii)蝕刻劑成分與 玻璃基板起化學反應’ iv)在化學反應之後，反應產物從玻 璃基板分離，及v)反應產物從鄰接於玻璃基板的擴散層被 移除。 在底下，會根據上述的化學反應用溼蝕刻方法中的浸 泡方法、喷濺方法、噴射流方法做個說明。浸泡方法涵蓋 了包含姓刻劑在触刻槽中’將玻璃基板浸沒在蚀刻劑中， 並從触刻槽的底端創造氣泡’所以這些氣泡產生蝕刻劑在 該玻璃基板表面的流動》在這裡，這些氣泡係關於蝕刻劑 或反應產物的動力，像是蝕刻劑的擴散 '反應產物的分離 及反應產物從擴散層的移除。藉由增加蝕刻劑和反應產物 的動能’這些氣泡加速了接觸、擴散與分離。 換句話說，這些氣泡用來快速供應新的蝕刻劑到玻璃 基板上及從玻螭基板表面移除蝕刻劑。根據上面的原理來 運作的π泡方法有高生產率的優點，因為好幾片玻璃基板 200932695 可以用適合放入一浸泡盆的狀態泡入，因為蝕刻劑填充了 蝕刻槽。然而，這個浸泡方法有個缺點’反應產物仍然停 留在在姓刻槽裡，黏附在玻璃基板表面，因此導致了表面 品質的反效果。這個結果使藉由增加蝕刻量來減少玻璃基 板厚度的方式變得困難，並且因此使用了大量的蝕刻劑來 钮刻玻璃基板。 喷濺方法是發展用來補充浸泡方法的缺點。噴濺方法 在品質方面比浸泡方法來得優越。參照圖丨，喷濺方法涵蓋 了從管嘴11噴濺蝕刻劑12到玻璃基板13上面。根據這個 蝕刻原理的蝕刻步驟跟上面所描述的關於浸泡方法的步驟 一樣。然而’喷濺方法使用了被稱為噴濺器的工具，藉由 垂直注射蝕刻劑到玻璃基板上而產生大量動能，並因而能 供應新的蝕刻劑及更快速且均勻地移除反應產物。更進一 步來說，在相同溫度下，噴濺方法比起浸泡方法可以獲得 更尚的品質及更高的蚀刻速率。 噴濺方法可以使用具有大容量的槽，因為反應產物易 於移除而且蝕刻劑持續地經由該槽與蝕刻空間循環。此 外，噴濺方法不但可以有利地維持絕佳的表面品質，也可 乂減低使用的姓刻劑量，因為蚀刻劑可以持績地經由反應 產物的處理被使用。然而，噴濺方法的生產率相當貧乏， 因為它只能一片一片地處理玻璃基板。 噴射流方法是發展用來克服上面提到的問題。喷射流 方法可以被視為是浸泡方法和喷濺方法的組合。噴射流方 法涵蓋了用蝕刻劑填充蝕刻槽，將玻璃基板浸沒在蝕刻劑 200932695 中’從一側產生一個強勁的蝕刻劑流以作為浸泡方法的氣 泡。此外，新的钮刻劑持續地被供應至蝕刻槽中，而且流 動在触刻槽上一部分的蝕刻劑被收集且重新使用。即使喷 射流方法可能提高生產率，但是它的缺點在於一開始的成 本很尚。 【發明内容】 本發明被製造用來解決上述先前技術的問題。 本發明一方面提供了用於蝕刻玻璃基板的器械，其中 固疋單元被提供在至少一玻璃基板下面相對於地面以一 預疋傾斜度可分開地固定並支撐該玻璃基板及提供一喷濺 翠几在該玻璃基板上以喷濺蝕刻劑到該玻璃基板上以減少 玻璃基板厚度。 本發明另一方面提供_改良品質的玻璃基板，該玻璃 基板由上面提到的器械所製造。 根據本發明的一種方面，該用於蝕刻玻璃基板的器械 可能包括一固定單元’該固定單元被提供在一個或更多玻 璃基板下面相對於地面以一預定傾斜度可分開地固定並支 樓该玻璃基板；及提供—喷濺單it在該等玻璃基板上以喷 濺蝕刻劑到该玻璃基板上’其中該玻璃基板藉由蝕刻減少 厚度。 在本發明的一個示範性實施例中，該喷濺單元可能包 括或多個皆嘴頭及一或多個用於喷濺蝕刻劑的管嘴。 在本心明的另一個示範性實施例中，管嘴的終端尖端 可月b間隔玻璃基板一預定距離，該預定距離由管嘴間的間 200932695 距與管嘴的姓电丨 蚀亥！劑噴濺角度決定。 在個本發明進一步的示範性實施例中，該玻璃基板 可能相對於營喈& ^的一垂直平面以範圍從0度到45度的角度 傾斜，該垂直t , 直十面經由管嘴垂直延伸。 在本發明的另—個示範性實施例中，玻璃基板彼此間 以預疋間距被配置在固定單元上，其中該間距範圍從5 公釐到300公着。 在一個本發明進一步的示範性實施例中，該用於蝕刻 玻璃基板的器械可能進一步包含與該喷濺單元相通聯的一 蚀刻劑槽’及一反應產物槽，被提供在固定單元的下部分 以收集經由從管嘴噴濺出的蝕刻劑與玻璃基板之間反應產 生的反應產物；其中該蝕刻劑的未反應部分從反應產物槽 循環至蝕刻劑槽。 在本發明的另一個示範性實施例中，該反應產物腔室 可能包括一過遽構件’該過濾構件用於將反應產物從蝕刻 劑的未反應部分分離出來。 在一個本發明進一步的示範性實施例中，該蝕刻劑可 能是氟化氫’而玻璃基板的蝕刻率可能根據蝕刻劑中氫離 子、氟化氫與二氟化氫的濃度變化。 在一個本發明進一步的另一個示範性實施例中，該固 定單元可能包括用於幫助固定玻璃基板及幫助反應產物流 入反應產物槽的玻璃基板接觸構件。 根據本發明的另一方面，一種用於薄膜電晶體液晶顯 示器的玻璃薄板是用上面所描述的器械所製造，該玻璃薄 200932695 板具有範圍從〇,3公釐到i公釐的厚度及範圍從1〇〇〇χ12〇〇 平方公釐到1 100x1300平方公釐的面積。 上面所提出的本發明的示範性實施例可以藉由更輕易 地將玻璃基板處理成更薄的玻璃薄板來改良生產率，及藉 由讓钕刻劑順著玻璃基板流動來改良品質。進一步來說， 可以藉由在0.3公釐或更少的厚度與1〇〇〇χ12〇〇平方公釐上 實行的超細蝕刻來改善經濟競爭力。 【實施方式】 本發明在之後將參照隨附圖式（其中，在裡頭顯示了 示範性實施例）更全面性地描述。 在隨附圖式中，圖i為根據一傳統方法說明—個基板 蝕刻過程的概略視圖。_ 2為根據本發明說明用於蝕刻玻 璃基板之器械之第-實施例的透視圖，圖3根據本發明說 明一钮刻玻璃基板過程的第一實施例。 圖4為根據本發明說明玻璃基板與垂直平面（其中該 垂直平面經由管嘴垂直延伸）之幾何組構的側面與前方： 視圖’圖5為比較本發明之敍刻方法與傳統玻璃餘刻方法 的概略視圖，6為說明被供應至玻璃基板表面之敍刻劑 量與蝕刻速率相對於表面品質之間的關係圖。 圖7為說明被供應至玻璃基板表面的蝕刻劑量與垂直 方向之玻璃基板的不同厚庶之門沾明及阳 U早度之間的關係圖，圖8為說明根 據玻璃基板間距之不同姓釗厘许八 N蝕刻厚度分佈的概略視圖，及圖9 為根據本發明之第一實施你| 1日日沾 y 耳她例說明玻螭基板與管嘴之間幾何 關係的概略視圖。 200932695 此外，圖1 〇為根據本發明之第二實施例說明玻璃基板 與固定單元間幾何關係的透視圖。 參照圖2與圖3，提供一用於蝕刻玻璃基板的器械 1 〇〇’該器械藉由蝕刻玻璃基板的表面減少了玻璃基板3〇〇 的厚度。器械100包括向下噴濺蝕刻劑到玻璃基板3〇〇上 的喷濺單元101與固定玻璃基板300的固定單元2〇0。 配置一或更多玻璃基板30(^當複數個玻璃基板3〇〇被 放入器械100，複數個玻璃薄板可以同時被產生。玻璃基板 3〇〇需要包含矽（Si)或氧化矽（Si〇2)以因此被像是氟化氫（HF) 0 的蝕刻劑蝕刻。然而，這並不意圖限制本發明，而且玻璃 基板300也可以以不同形式被提供。 固定單元200被提供以從下面固定與支撐玻璃基板 300，這樣一來玻璃基板3〇〇就相對於地面傾斜。在這裡， 不需要相對於一蝕刻劑供應單元以9〇度配置基板。固定單 元2 0 0由t合物樹脂或有機材料組成，並組構以使用最小 接觸面積固定玻璃基板300。 這是因為蝕刻劑需要被喷濺至玻璃基板3〇〇上並且完 〇 全與玻璃基板300接觸。然而’固定單元2〇〇並不限於聚 合物，只要它能固定玻璃基板3〇〇。 此外，固定構件200可以用溝槽形成，這些溝槽彼此 以一定間隔分離開來以固定複數個玻璃基板3〇〇。固定構件 2〇〇的寬度可以被設定為和玻璃基板3〇〇的寬度一樣，而且 玻璃基板300以最小面積被固定至固定構件2〇〇。 因為複數個玻璃基板300可以被固定地安裝進固定構 10 200932695 件200中，就有可能放入固定構件200與玻璃基板300的 組件至一蝕刻區，蝕刻玻璃基板3〇〇，並且之後將這個組件 攸敍刻區取出。這樣的話，因為固定單元2GG彳以被輕易 插敍亥丨區與取出敍刻區，複數個玻璃基板3〇〇可以同 時被蝕刻。本發明的這個實施例是有效的，因為單一玻璃 基板或複數個玻璃基板可以被蝕刻。此外，本發明的這個 實施例疋非常具有生產力且經濟的，因為更多的玻璃基板 可以藉由一噴濺方法蝕刻，再藉由一浸泡方法被蝕刻。 ® 口疋單元可以製作成可撓性的，因為玻璃基板300 大致上不會經受任何外力。當固定單元200與玻璃基板300 保持接觸，反應產物可能累積在固定單元2〇〇上，因此產 生了缺陷，像是汙點《為了解決這個問題，如圖1〇所示， 固定單tl 200可能包括一夾子2〇2，該夹子2〇2用來固定一 玻璃基板300。本發明的這個實施例有利地提供了很大的自 由角度，因為固定單元200可以根據基板或是過程的型式 ❹ 被準備。這是因為蝕刻劑104從上面被噴濺到玻璃基板300 上，特別的是，沿著玻璃基板3〇〇的表面噴濺以最小化從 外而至的任何影響。 用於噴濺蝕刻劑104到玻璃基板300上的喷濺單元1〇1 從上面被提供。因為喷濺單元1〇1被提供在玻璃基板3〇〇 上面且從上面喷濺蝕刻劑，玻璃基板3〇〇大致上沒有經受 外力。因為玻璃基板300經受了很小數量的外力，所以可 以輕易地設計一個重力支撐構造。因為這些理由，非常有 利的是’將玻璃基板300的厚度減少至〇.1公釐或更少並且 11 200932695 蝕刻大面積ll00xl250平方公釐或***的更大面積或是 更多代的更大面積。 喷濺單7L 101包括一或多個管嘴頭1〇2，在管嘴頭i 〇2 的每一個上面提供了 一或更多管嘴1〇p管嘴1〇3的每一者 被設定用來喷濺蝕刻劑。 參照圖5 ’採用噴濺方法是因為可以用少量蝕刻劑來蝕 刻大面積而且蚀刻厚度可以適度地被調整。提供喷減單 元101在玻璃基板300上以最小化壓力，這個壓力當蝕刻 劑1 04被噴濺時施加至玻璃基板300上。當蝕刻劑丨04因 為重力而掉落，它會首先接觸玻璃基板300上面、中間、 或下面的部分，並且當之後蝕刻玻璃基板300的表面時， 藉由表面張力沿者玻璃基板3 0 0往下流。相反地，如同圖^ 斤示傳統的嘴錢方法施加大量的壓力到玻璃基板1 3上，Si02 + 4HF SiF4 + 2H2 The process of etching a glass substrate using an etchant containing HF can be divided into the following five steps, which determine the quality of the etching. In these five steps, i) the etchant is diffused into the diffusion layer adjacent to the glass substrate, ii) the composition of the etchant is absorbed into the surface of the glass substrate, and iii) the etchant composition reacts chemically with the glass substrate. After the chemical reaction, the reaction product is separated from the glass substrate, and v) the reaction product is removed from the diffusion layer adjacent to the glass substrate. Under the above, the immersion method, the sputtering method, and the jet flow method in the wet etching method will be described based on the above chemical reaction. The immersion method covers the inclusion of a surname in the etch groove to 'immerse the glass substrate in the etchant and create bubbles from the bottom end of the etched groove' so these bubbles create a flow of etchant on the surface of the glass substrate" here These bubbles are related to the kinetics of the etchant or reaction product, such as the diffusion of the etchant's reaction product and the removal of the reaction product from the diffusion layer. These bubbles accelerate contact, diffusion and separation by increasing the kinetic energy of the etchant and reaction products. In other words, these bubbles are used to quickly supply a new etchant onto the glass substrate and remove the etchant from the surface of the glass substrate. The π-bubble method operating according to the above principle has the advantage of high productivity because several glass substrates 200932695 can be infused in a state suitable for being placed in a soaking basin because the etchant fills the etching bath. However, this immersion method has a disadvantage that the reaction product is still left in the groove of the last name and adheres to the surface of the glass substrate, thus causing an adverse effect on the surface quality. This result makes it difficult to reduce the thickness of the glass substrate by increasing the amount of etching, and thus a large amount of etchant is used to button the glass substrate. Splashing methods are developed to supplement the shortcomings of the soaking method. The splatter method is superior in quality to the immersion method. Referring to the drawing, the sputtering method covers spraying the etchant 12 from the nozzle 11 onto the glass substrate 13. The etching step according to this etching principle is the same as that described above with respect to the immersion method. However, the sputtering method uses a tool called a splatter to generate a large amount of kinetic energy by vertically injecting an etchant onto the glass substrate, and thus can supply a new etchant and remove the reaction product more quickly and uniformly. Further, at the same temperature, the sputtering method can achieve better quality and higher etching rate than the immersion method. The sputtering method can use a groove having a large capacity because the reaction product is easily removed and the etchant is continuously circulated through the groove and the etching space. In addition, the sputtering method can advantageously not only maintain excellent surface quality, but also reduce the surrogate dose used because the etchant can be used sustainably through the treatment of the reaction product. However, the productivity of the sputtering method is rather poor because it can only process the glass substrate piece by piece. The jet flow method was developed to overcome the problems mentioned above. The jet flow method can be considered as a combination of a soaking method and a splashing method. The jet flow method involves filling the etched trench with an etchant and immersing the glass substrate in etchant 200932695 'a strong etchant stream from one side as a bubble for the immersion method. In addition, new buttoning agents are continuously supplied into the etching bath, and a portion of the etchant flowing over the tenter grooves is collected and reused. Even though the jet flow method may increase productivity, its disadvantage is that the cost at the beginning is very good. SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the prior art described above. One aspect of the present invention provides an apparatus for etching a glass substrate, wherein the solid-state unit is provided under the at least one glass substrate to detachably fix and support the glass substrate at a pre-tilt inclination relative to the ground and to provide a splash Several etchants are sprayed onto the glass substrate to reduce the thickness of the glass substrate. Another aspect of the invention provides a glass substrate of improved quality, which is manufactured from the apparatus mentioned above. According to an aspect of the invention, the apparatus for etching a glass substrate may include a fixing unit that is provided under one or more glass substrates and that is detachably fixed and supported at a predetermined inclination with respect to the ground. a glass substrate; and providing a splattering sheet on the glass substrate to etch an etchant onto the glass substrate, wherein the glass substrate is reduced in thickness by etching. In an exemplary embodiment of the invention, the splatter unit may include one or more nozzles and one or more nozzles for spraying etchant. In another exemplary embodiment of the present invention, the tip end of the nozzle may be spaced apart from the glass substrate by a predetermined distance from the inter-nozzle between 200932695 and the last name of the nozzle! The spray angle is determined. In a further exemplary embodiment of the present invention, the glass substrate may be inclined at an angle ranging from 0 degrees to 45 degrees with respect to a vertical plane of the camp & ^, the vertical t, the straight ten sides being perpendicular through the nozzle extend. In still another exemplary embodiment of the present invention, the glass substrates are disposed on the fixed unit at a pre-pitch distance, wherein the pitch ranges from 5 mm to 300 mm. In a further exemplary embodiment of the present invention, the apparatus for etching a glass substrate may further include an etchant tank and a reaction product tank connected to the sputtering unit, provided in a lower portion of the fixed unit The reaction product produced by the reaction between the etchant sprayed from the nozzle and the glass substrate is collected; wherein the unreacted portion of the etchant is circulated from the reaction product tank to the etchant tank. In another exemplary embodiment of the invention, the reaction product chamber may include a pass-through member' for separating the reaction product from the unreacted portion of the etchant. In a further exemplary embodiment of the invention, the etchant may be hydrogen fluoride' and the etch rate of the glass substrate may vary depending on the concentration of hydrogen ions, hydrogen fluoride, and hydrogen fluoride in the etchant. In still another exemplary embodiment of the present invention, the fixing unit may include a glass substrate contact member for assisting in fixing the glass substrate and assisting in the flow of the reaction product into the reaction product tank. In accordance with another aspect of the invention, a glass sheet for a thin film transistor liquid crystal display is fabricated using the apparatus described above having a thickness and range ranging from 〇, 3 mm to i mm. From 1〇〇〇χ12〇〇2 mm to 1 100x1300 mm2. The exemplary embodiment of the present invention as set forth above can improve productivity by more easily processing a glass substrate into a thinner glass sheet, and improve quality by allowing the squeegee to flow along the glass substrate. Further, economic competitiveness can be improved by ultra-fine etching performed at a thickness of 0.3 mm or less and 1 〇〇〇χ 12 〇〇 square mm. [Embodiment] The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments are shown. In the accompanying drawings, FIG. 1 is a schematic view illustrating a substrate etching process according to a conventional method. _ 2 is a perspective view of a first embodiment of an apparatus for etching a glass substrate in accordance with the present invention, and Fig. 3 illustrates a first embodiment of a process of dicing a glass substrate in accordance with the present invention. 4 is a side and front view of a geometrical configuration of a glass substrate and a vertical plane (where the vertical plane extends vertically through the nozzle) in accordance with the present invention: FIG. 5 is a comparison of the present invention and a conventional glass residual method. A schematic view, 6 is a graph illustrating the relationship between the diced dose and the etch rate versus surface quality supplied to the surface of the glass substrate. Fig. 7 is a view showing the relationship between the etching dose supplied to the surface of the glass substrate and the different thickness of the glass substrate in the vertical direction, and the relationship between the aging and the aging of the yang, and Fig. 8 is a diagram showing the difference between the radii of the glass substrates. A schematic view of the eight-n etching thickness distribution is shown, and FIG. 9 is a schematic view showing the geometric relationship between the glass substrate and the nozzle according to the first embodiment of the present invention. Further, Fig. 1 is a perspective view showing a geometric relationship between a glass substrate and a fixing unit according to a second embodiment of the present invention. Referring to Figures 2 and 3, an apparatus for etching a glass substrate is provided. The apparatus reduces the thickness of the glass substrate 3 by etching the surface of the glass substrate. The apparatus 100 includes a sputtering unit 101 that sprays an etchant downward onto the glass substrate 3 and a fixing unit 2〇0 that fixes the glass substrate 300. One or more glass substrates 30 are disposed (when a plurality of glass substrates 3 are placed in the device 100, a plurality of glass sheets can be simultaneously produced. The glass substrate 3 needs to contain bismuth (Si) or bismuth oxide (Si〇). 2) is etched with an etchant such as hydrogen fluoride (HF) 0. However, this is not intended to limit the invention, and the glass substrate 300 may also be provided in different forms. The fixing unit 200 is provided to be fixed and supported from below. The glass substrate 300 is such that the glass substrate 3 is inclined with respect to the ground. Here, it is not necessary to arrange the substrate at 9 degrees with respect to an etchant supply unit. The fixing unit 200 is made of a t-resin or an organic material. The composition is assembled and fixed to fix the glass substrate 300 using the minimum contact area. This is because the etchant needs to be sprayed onto the glass substrate 3 and completely contacted with the glass substrate 300. However, the 'fixed unit 2 is not It is limited to the polymer as long as it can fix the glass substrate 3 . Further, the fixing member 200 may be formed by grooves which are spaced apart from each other to fix a plurality of glasses The width of the fixing member 2〇〇 can be set to be the same as the width of the glass substrate 3〇〇, and the glass substrate 300 is fixed to the fixing member 2〇〇 with a minimum area. Since a plurality of glass substrates 300 can be Fixedly mounted in the fixed structure 10 200932695 200, it is possible to place the components of the fixing member 200 and the glass substrate 300 to an etched region, etch the glass substrate 3 〇〇, and then take out the component 攸 刻 刻. In this case, since the fixing unit 2GG is easily inserted into the area and the drawing area, a plurality of glass substrates 3 can be simultaneously etched. This embodiment of the invention is effective because of a single glass substrate or a plurality of glasses. The substrate can be etched. Furthermore, this embodiment of the invention is very productive and economical since more glass substrates can be etched by a sputtering method and etched by a immersion method. It is made flexible because the glass substrate 300 is not substantially subjected to any external force. When the fixing unit 200 is in contact with the glass substrate 300 The reaction product may accumulate on the fixed unit 2〇〇, thus causing defects such as stains. “To solve this problem, as shown in FIG. 1A, the fixed single t1 200 may include a clip 2〇2, which is a clip 2〇 2 is used to fix a glass substrate 300. This embodiment of the invention advantageously provides a large free angle because the fixing unit 200 can be prepared according to the type of substrate or process. This is because the etchant 104 is Splashing onto the glass substrate 300, in particular, spraying along the surface of the glass substrate 3 to minimize any effects from the outside. Sputtering unit for spraying the etchant 104 onto the glass substrate 300 1 〇 1 is provided from above. Since the splatter unit 1 〇 1 is provided on the glass substrate 3 且 and the etchant is sprayed from above, the glass substrate 3 〇〇 is substantially not subjected to an external force. Since the glass substrate 300 is subjected to a small amount of external force, a gravity support structure can be easily designed. For these reasons, it is very advantageous to reduce the thickness of the glass substrate 300 to 公1 mm or less and 11 200932695 to etch a large area of ll00xl250 mm 2 or a larger area of the fourth generation or more. large area. The splatter single 7L 101 includes one or more nozzle heads 1 〇 2, one or more nozzles are provided on each of the nozzle heads i 〇 2, and each of the nozzles 1 〇 3 nozzles 1 〇 3 is set Used to spray etchant. Referring to Fig. 5', the sputtering method is employed because a large amount of etchant can be used to etch a large area and the etching thickness can be appropriately adjusted. A spray reduction unit 101 is provided on the glass substrate 300 to minimize pressure which is applied to the glass substrate 300 when the etchant 104 is sprayed. When the etchant 丨04 falls due to gravity, it first contacts the upper, middle, or lower portion of the glass substrate 300, and when the surface of the glass substrate 300 is subsequently etched, the surface tension is along the glass substrate 300. Indecent. On the contrary, as shown in the figure, the conventional mouth money method applies a large amount of pressure to the glass substrate 13,
因為蚀刻劑12被直接噴濺在玻璃基板13上。 參照圖4 ’從玻璃基板300到管嘴1〇3終端尖端的距離 疋由管嘴103的間距與管嘴103的蝕刻劑喷濺角度所決定 (也就是管嘴1〇3喷濺蝕刻劑1〇4的角度）。從玻璃基板 00到S嘴1 〇3終端尖端的距離因此被決定以確保玻璃基板Since the etchant 12 is directly sprayed on the glass substrate 13. Referring to Fig. 4', the distance from the glass substrate 300 to the tip end of the nozzle 1〇3 is determined by the pitch of the nozzle 103 and the etchant angle of the nozzle 103 (that is, the nozzle 1 〇 3 spray etchant 1 〇4 angle). The distance from the glass substrate 00 to the tip end of the S nozzle 1 〇 3 is thus determined to ensure the glass substrate
的所有部分被曝露在韻刻劑1 〇4中。從玻璃基板3 〇〇到 e嘴1 03終端尖端的距離h可以由下列的方程式1被定義·· h >All parts of the body were exposed to the engraving agent 1 〇4. The distance h from the glass substrate 3 to the tip end of the e-mouth 103 can be defined by the following equation 1·· h >
2 tCLTt·^ h> lv 2tan^ ...方程式1 其中心為管嘴103之間的間距，％為管嘴i〇3之間的 間距，/Q u 以為管嘴的蝕刻劑喷濺角度。從玻璃基板3〇〇到管 12 200932695 嘴103白勺距離需要具 特徵。從®4上方看_ ^ 4方程式1所有情況的幾何 看寺，除非玻璃基板300的邊緣與最外 面的g嘴103之間的間瞌 基板30。的所有，分不會曝露在㈣劑_中。 , h ' '一~θ…方程式2 tCLTi^r2 tCLTt·^ h> lv 2tan^ ... Equation 1 The center is the spacing between nozzles 103, % is the spacing between nozzles i〇3, /Q u is the etchant spray angle of the nozzle. The distance from the glass substrate 3 to the tube 12 200932695 mouth 103 needs to be characterized. Seen from above the ®4 _ ^ 4 Equation 1 Geometry of all cases Look at the temple unless the edge of the glass substrate 300 and the outermost g-mouth 103 are between the substrate 30. All of the points will not be exposed to the (four) agent. , h ' '一~θ... Equation 2 tCLTi^r
Ο 此外玻璃基板300的邊緣與最外面的管嘴1〇3之間 的間隔d ’從圖"4上方看時，需要滿足下列的方程式3。 d ~ ~θ……方程式3 tan2 玻璃基板300與管嘴垂直平面之間的傾斜度，被定義 在從0度到45度的範圍之中，該垂直平面經由管嘴垂直延 伸。參照圖9，最佳的是玻璃基板3〇〇相對於垂直平面以〇 度傾斜，該垂直平面經由管嘴1〇3垂直延伸。在這個狀況 中從管嘴噴濺出來的液體触刻劑與钮刻區中固體構造的 \才里了能產生蒸氣，所以餘刻不只是可以用液體，也可以 用氣體來實行。當玻璃基板300相對於管嘴丨〇3的垂直平 面傾斜30度時，在垂直方向上大致沒有厚度的差異。然而， 假如傾斜到達47度’玻璃基板300的下部分會比其他部分 還厚，因為反應產物並沒有有效移除。較佳的是，該傾斜 被決定在上述的範圍内。 配置在固定單元200上複數個玻璃基板300之間的間 距較佳地在從5到300公釐的範圍内。玻璃基板300之間 的間距被決定在上面提到的範圍中，是為了藉著蝕刻較多 13 200932695 數目的玻璃基板300來增加生產率。實際上，以8公釐的 間距配置玻璃基板生產率是以4〇公釐的間距配置玻璃基板 的五倍《這樣的話，玻璃基板間的間距是一個決定生產率 非常重要的因素《當減少玻璃基板300間的間距會增加生 產率’這也需要減少管嘴頭1〇2(管嘴黏附的地方）的間距。 減少管嘴頭102之間的間距也需要減少管嘴頭的直徑，因 此使得供應充足蝕刻劑到管嘴1〇3上變得困難。但是在這 個狀況下’製程成本會增加’因為會使用特別的元件，而 不是標準元件。進一步來說，管嘴103的保養也變得困難。 從而，玻璃基板3 0 0之間的間距最好決定在上面提到 的範圍之中。 從而，玻璃基板300之間的間距較佳地決定在上述範 圍内《此外，因為一次要放入的玻璃基板數目代表了一次 蝕刻過程中蝕刻的全部數量，需要思考的是這個蝕刻器械 的規格’像是在預定壓力與幫浦容量下，槽的容量與用於 維持從管嘴噴濺出來之蝕刻劑之管子的規格。 噴濺單元1 0 1以一個蝕刻槽裝配，該蝕刻槽組構以與 一反應產物槽互相通聯。該蝕刻劑槽包含HF，HF離子的濃 度與數a:都是根據本發明的過程來調整。 反應產物槽被提供在固定單元200的下部分以收集反 應產物，該反應產物經由從管嘴103喷濺出來的蝕刻劑1〇4 與玻璃基板300之間的反應所產生，所以未反應蝕刻 劑可以從反應產物槽循環至蝕刻槽。經由蝕刻劑丨〇4與玻 璃基板300之間的反應所獲得的反應產物快速地流進反應 200932695 產物槽。反應產物槽與蚀刻劑槽互相連接或者共享一個空 間以循環未反應触刻劑。來自反應產物的未反應钱刻劑可 以再一次被導引進入蝕刻劑槽以快速供應新的蚀刻劑並移 除反應產物，因此改善表面品質。反應產物槽可能包括一 過濾構件以從蝕刻劑104分離反應產物。 蝕刻劑104是HF，而且玻璃基板的蝕刻速率是由蝕刻 劑104 中氫離子（H+)、HF與二氟化氫（HF2)的濃度所決定。蝕 © 刻速率根據H+、HF與HF2的濃度變化，並沒有正比於供應 至玻璃基板300的触刻劑數量。 參照圖6 ’可以藉由供應預定數量或更多數量的蝕刻劑 104來確保蝕刻速率與表面品質。因為蝕刻劑1〇4的數量 並不與姓刻速率與表面品質成正比’触刻劑104以預定數 里或更多數里來供應。參照圖6與圖7，即使触刻劑是從玻 璃基板300上面來供應，當該基板的下部分被供應了預定 數量或更多數量的蝕刻劑，厚度差異和品質差異並沒有在 ® 玻璃基板300的上部分302與下部分303之間發生。也就 疋忒，預定數量或更多數量的蝕刻劑總是與玻璃基板 的表面保持接觸，所以可以確保蝕刻速率與絕佳的表面品 質。 參照圖10，本發明這個實施例的固定單元2〇〇被提供 玻璃基板接觸構件201以幫助固定玻璃基板3〇〇並且幫助 反應產物流進反應產物槽。玻璃基板接觸構件20 1是圓形 的構造，由選自下列材料構成之群組至少其中之一組成： 15 200932695 抗氟化氫材料、聚氯乙烯（PVC)、聚醚醚酮（PEEK)及鐵氟龍 等等。玻璃基板接觸構件201並沒有限制在上面提到的材 料與形狀中，但是可以用有助於蝕刻劑104與反應產物流 動的具有任何形狀的任何材料來施行。此外，玻璃基板接 觸構件201與玻璃基板300點接觸（p〇int c〇ntact)以最大化 反應產物的流動，而且玻璃基板接觸構件2〇1比玻璃基板 的厚度具有更大的間隔。 由用於蝕刻玻璃基板的器械製造的玻璃薄板一般具有 範圍從0.3公釐到1公釐的厚度，而且可以用厚度〇·丨公釐 ❹ 或更薄的厚度來製造。用於蝕刻玻璃基板的器械可以製造 具有範圍從1000x1200平方公釐到η〇〇χΠ〇〇平方公釐之 . 大面積薄膜電晶體液晶顯示（TFT-LCD)玻璃薄板。 在底下是一個本發明的示範性實施例，將會說明隨著 玻璃基板300間隔的改變，該玻璃基板3〇〇之上部分與下 部分的厚度差異。此外，如同本發明的另一個示範性實施 例，將會說明根據管嘴103間距與玻璃基板3〇〇間距之該 玻璃基板300之上部分與下部分的厚度差異。 ◎ 例1 為了檢視當預定量或更多《量的姓刻劑被供應時， 玻璃基板在垂直方向大致上沒有厚度差異，上管嘴以 平方公釐的間距被配置，而且被供應至玻璃基板表面的蝕 刻劑數量隨著不同的玻璃間距，包括未定義的9〇公釐與3〇 公釐變化。在這裡，所使用管嘴噴發出來的數量是每>分鐘 〇.1到〇.2公升，而且玻璃基板具有37〇χ47〇平方公釐 16 200932695 積與被敍刻至300微米的0.63公董厚度。Further, when the interval d' between the edge of the glass substrate 300 and the outermost nozzle 1〇3 is viewed from above the figure "4, it is necessary to satisfy the following Equation 3. d ~ ~θ... Equation 3 The inclination between the tan2 glass substrate 300 and the vertical plane of the nozzle is defined as being in the range from 0 to 45 degrees, which extends vertically through the nozzle. Referring to Fig. 9, it is preferable that the glass substrate 3 is inclined with respect to a vertical plane which is vertically extended via the nozzle 1〇3. In this condition, the liquid etchant sprayed from the nozzle and the solid structure in the button engraved area can generate vapor, so the remainder can be carried out not only with liquid but also with gas. When the glass substrate 300 is inclined by 30 degrees with respect to the vertical plane of the nozzle bowl 3, there is substantially no difference in thickness in the vertical direction. However, if the tilt reaches 47 degrees, the lower portion of the glass substrate 300 will be thicker than the other portions because the reaction product is not effectively removed. Preferably, the tilt is determined to be within the above range. The spacing between the plurality of glass substrates 300 disposed on the fixed unit 200 is preferably in the range of from 5 to 300 mm. The spacing between the glass substrates 300 is determined in the above-mentioned range in order to increase the productivity by etching a larger number of 200932695 glass substrates 300. In fact, the glass substrate productivity at a pitch of 8 mm is five times that of arranging the glass substrate at a pitch of 4 mm. "In this case, the pitch between the glass substrates is a very important factor determining productivity" when reducing the glass substrate 300. The spacing between them increases the productivity. This also requires a reduction in the spacing of the nozzle head 1〇2 (where the nozzle is attached). Reducing the spacing between the nozzle heads 102 also requires reducing the diameter of the nozzle tip, thus making it difficult to supply sufficient etchant to the nozzle 1〇3. However, in this case, the process cost will increase because special components will be used instead of standard components. Further, maintenance of the nozzle 103 also becomes difficult. Therefore, the spacing between the glass substrates 300 is preferably determined within the above-mentioned range. Therefore, the spacing between the glass substrates 300 is preferably determined within the above range. "In addition, since the number of glass substrates to be placed at one time represents the total number of etchings in one etching process, it is necessary to consider the specifications of the etching apparatus." For example, at a predetermined pressure and pump capacity, the capacity of the tank is the same as the size of the tube used to maintain the etchant sprayed from the nozzle. The splatter unit 101 is assembled in an etched trench that is interconnected with a reaction product bath. The etchant bath contains HF, and the concentration of the HF ions and the number a: are both adjusted in accordance with the process of the present invention. A reaction product tank is provided in a lower portion of the fixing unit 200 to collect a reaction product which is generated by a reaction between the etchant 1〇4 sprayed from the nozzle 103 and the glass substrate 300, so that the unreacted etchant is generated. It can be circulated from the reaction product tank to the etching tank. The reaction product obtained by the reaction between the etchant 丨〇4 and the glass substrate 300 rapidly flows into the reaction tank of 200932695. The reaction product tank and the etchant tank are interconnected or share a space to circulate unreacted etchant. The unreacted money engraving agent from the reaction product can be once again directed into the etchant bath to quickly supply a new etchant and remove the reaction product, thus improving surface quality. The reaction product tank may include a filter member to separate the reaction product from the etchant 104. The etchant 104 is HF, and the etching rate of the glass substrate is determined by the concentration of hydrogen ions (H+), HF, and hydrogen fluoride (HF2) in the etchant 104. The etch rate varies according to the concentration of H+, HF, and HF2, and is not proportional to the amount of the etchant supplied to the glass substrate 300. The etching rate and surface quality can be ensured by supplying a predetermined amount or more of the etchant 104 with reference to Fig. 6'. Since the amount of the etchant 1〇4 is not proportional to the surname rate and the surface quality, the etchant 104 is supplied in a predetermined number or more. Referring to FIGS. 6 and 7, even if the etchant is supplied from above the glass substrate 300, when the lower portion of the substrate is supplied with a predetermined amount or more of etchant, the difference in thickness and quality is not in the glass substrate. Occurs between the upper portion 302 and the lower portion 303 of 300. That is, a predetermined amount or more of the etchant is always in contact with the surface of the glass substrate, so that the etching rate and excellent surface quality can be ensured. Referring to Fig. 10, a fixing unit 2 of this embodiment of the present invention is provided with a glass substrate contact member 201 to help fix the glass substrate 3 and to facilitate the flow of the reaction product into the reaction product tank. The glass substrate contact member 20 1 is of a circular configuration composed of at least one selected from the group consisting of: 15 200932695 Hydrogen fluoride resistant material, polyvinyl chloride (PVC), polyether ether ketone (PEEK), and iron fluoride Dragon and so on. The glass substrate contact member 201 is not limited to the materials and shapes mentioned above, but may be applied with any material having any shape that contributes to the flow of the etchant 104 and the reaction product. Further, the glass substrate contact member 201 is in point contact with the glass substrate 300 to maximize the flow of the reaction product, and the glass substrate contact member 2〇1 has a larger interval than the thickness of the glass substrate. Glass sheets produced from instruments for etching glass substrates generally have a thickness ranging from 0.3 mm to 1 mm, and can be made with a thickness of 〇·丨 mm 或更 or less. Instruments for etching glass substrates can be fabricated with a range of from 1000 x 1200 mm to η 〇〇χΠ〇〇 mm. Large area thin film transistor liquid crystal display (TFT-LCD) glass sheets. Underneath is an exemplary embodiment of the present invention, which will explain the difference in thickness between the upper and lower portions of the glass substrate 3 as the spacing of the glass substrate 300 changes. Further, as another exemplary embodiment of the present invention, the difference in thickness between the upper portion and the lower portion of the glass substrate 300 according to the pitch of the nozzle 103 and the distance from the glass substrate 3 will be explained. ◎ Example 1 In order to examine that when a predetermined amount or more of the amount of the surname is supplied, the glass substrate has substantially no thickness difference in the vertical direction, the upper nozzle is disposed at a pitch of square mm, and is supplied to the glass substrate. The amount of etchant on the surface varies with different glass spacings, including undefined 9 mm and 3 mm. Here, the number of nozzles used is from 〇.1 to 2.2 liters per gt; and the glass substrate has 37〇χ47〇2 mm 16 200932695 and 0.63 metrics that are smeared to 300 microns. thickness.
❹ 參照上面的表i與圖8,可以藉由供應預定數量或更多 數量的蝕刻劑來獲得所欲的規格。可以增加從上面供應的 蝕刻劑數量以獲得一均句厚度分佈。藉由增加從上面供應 蚀刻劑的量並且減少玻璃間距以增加生產率，大量的玻璃 基板可以在相同空間裡被蝕刻。 例2 一個LCD基板目前厚度均勻性的規格大概在正負 微米的等級。玻璃基板之上部分與下部分的厚度差異由改 變管嘴與玻璃基板的間距來檢查以測試是否確保了厚度的 均勻性。在這個例子裡，一個低密度玻璃基板的連結平板（面 積590 X 670平方公釐，厚度I%公釐）像是一 TFT_LcD盔 鹼玻璃基板（NEG OA-21或SCP E2K)被蝕刻到〇.6公楚。 表2 管嘴間距 50公釐 40公釐 15公釐 50公釐 玻璃間距 40公釐 30公釐 8公楚 8公釐 垂直方向的 厚度差異 19 到 26 微米 1 3到2 1微 米 9到18微 米 35到50微 米 使用於例2中的管嘴具有每分鐘0.3公升的喷發量。實 際上，以8公釐的間距配置玻璃基板生產率可以是以40公 17 200932695 釐的間距配置玻璃基板的五倍。這樣一來，玻璃基板間的 間距就是一個決定生產率很重要的因素。即使減少玻璃基 板的間距就可以增加生產率，減少管嘴頭的間距也需要減 少管嘴頭的直從，因此使得供應充足數量之姓刻劑到管嘴 變得困難。在這個狀況下，因為使用了特別的元件，而不 用標準元件，所以製造成本會增加。進—步來說，管嘴1〇3 的維持也變得很困難。因為一次要被***的玻璃基板數量 代表了在一次蝕刻過程中蝕刻的全部數量，需要思考的是❹ Referring to Tables i and 8 above, the desired specifications can be obtained by supplying a predetermined amount or more of an etchant. The amount of etchant supplied from above can be increased to obtain a uniform thickness distribution. By increasing the amount of etchant supplied from above and reducing the glass pitch to increase productivity, a large number of glass substrates can be etched in the same space. Example 2 The current thickness uniformity of an LCD substrate is approximately on the order of plus or minus microns. The difference in thickness between the upper portion and the lower portion of the glass substrate was examined by changing the pitch of the nozzle from the glass substrate to test whether the uniformity of the thickness was ensured. In this example, a low-density glass substrate with a connecting plate (area 590 X 670 mm 2 , thickness I% mm) is like a TFT_LcD helmet alkali glass substrate (NEG OA-21 or SCP E2K) etched into 〇. 6 public Chu. Table 2 Nozzle spacing 50 mm 40 mm 15 mm 50 mm Glass spacing 40 mm 30 mm 8 mm 8 mm Vertical thickness difference 19 to 26 microns 1 3 to 2 1 micron 9 to 18 microns The nozzle used in Example 2 at 35 to 50 microns had an ejection amount of 0.3 liters per minute. In fact, the productivity of the glass substrate at a pitch of 8 mm can be five times that of arranging the glass substrate at a pitch of 40 mm 17 200932695 PCT. In this way, the spacing between the glass substrates is an important factor in determining productivity. Even reducing the spacing of the glass substrates increases productivity, and reducing the spacing of the nozzle heads also requires a reduction in the straightness of the nozzle tip, thus making it difficult to supply a sufficient amount of surname to the nozzle. In this case, since special components are used instead of standard components, the manufacturing cost increases. In the case of the step, the maintenance of the nozzle 1〇3 becomes difficult. Because the number of glass substrates to be inserted at one time represents the total amount of etching in one etching process, it is necessary to think about
這個#刻器械的規格，像是在預定壓力與幫浦容量下，槽 的容量與用於維持從管嘴喷濺出來之蝕刻劑之管子的規 格。需要供應一預定數量或更多數量的蝕刻劑以確保一顯 示裝置及其類似物的品質。在這個實驗中，一因素Q滿足 方程式4 : •…方程式4The specifications of this #刻仪器, such as the predetermined pressure and pump capacity, the capacity of the tank and the gauge of the tube used to maintain the etchant sprayed from the nozzle. It is necessary to supply a predetermined amount or more of an etchant to ensure the quality of a display device and the like. In this experiment, a factor Q satisfies Equation 4: • Equation 4
Cr — Nozzle xCr — Nozzle x
Gptch_ ^^-ptch x ^vptch 其中代表每分鐘管嘴的噴發數量[m3/min]，心μ 代表玻璃間距或玻璃配置尺寸[m]，鳩〃W代表管嘴間距或Gptch_ ^^-ptch x ^vptch which represents the number of ejections per minute [m3/min], the center μ represents the glass pitch or the glass configuration size [m], 鸠〃W represents the nozzle spacing or
是管嘴配置寬度尺寸[m]’❿〜“戈表管嘴間距或管嘴配 置長度尺寸[m]。 因素C7在例2中被視為變數，這是一個重要的因素。 即使因素Q的尺寸在數字表示方程式4巾是一偷，這是 因為只有玻璃基板的間距被考慮到，而玻璃基板的長度沒 有被考慮到，因素的真實尺寸是m3/min。這是因為玻璃 基板的長度不是一個重要的因素。 在這個實驗中，管嘴每分鐘的噴發數量是〇3公升左 18 200932695 右。根據管嘴與玻璃基板間距的C/值被紀錄在下面的表3 表3 管嘴間距 〇·〇5公尺 0.04公尺 0.015公尺 0.05公尺 玻璃間距 〇·〇4公尺 0.03公尺 0·008公尺 0·0〇8公尺 Cf [m2/min] 0.0048 0.00563 0.01067 0.00096 如同紀錄在上面表3的這種狀況，其中管嘴間距是 公釐（0.05公尺）而玻璃間距是8公釐（〇 〇〇8公尺），玻璃基 ® 板在垂直方向的厚度差異在從35微米到50微米的範圍内。 這個範圍部分落在這個規格内，而且厚度的差異是在 10到15微米的範圍内。因為在蝕刻前相對於厚度的一個邊 界，管嘴間距50公釐與玻璃間距8公釐是實際上無法應用 的幾何配置。 本發明也關於用於減少玻璃基板厚度的一化學蝕刻方 法。在傳統的浸泡方法中，困難的是均勻蝕刻一個具有大 〇 面積之玻璃基板的整個表面或是精確控制這個基板的厚 度。此外，因為傳統的浸泡方法增加了蝕刻劑的噴濺壓力 並且藉由從兩側供應蝕刻劑來引起氣流。這導致了構造上 的問題，因為要支撐玻璃基板來抵抗重力是困難的。 為了解決這些問題，本發明藉由從上面噴濺蝕刻劑來 最小化玻璃基板上的外力，進一步舉例來說，一具有1公 董厚度或是更薄厚度（例如〇 9公釐、〇 8公釐、0.6公餐等 等）的薄膜可以藉由蝕刻一具有126公釐& i 〇公釐厚度 的TFT-LCD連結平板來製造。在本發明的#刻器械中，二 19 200932695 姓刻不只可以被實行在一用於TFT_LCD、〇led及其類似 物的連結平板上，還可以被實行在還沒有連結的玻璃基板 或是矽晶圓上。更進_步夾螬，太鉻 ^ 少米：本發明的蝕刻器械是一個 製程技術，可以改良表面口暂I座吝，玄 凡衣曲興生產率’且可以用非常低 的成本來達成。 _ 當本發明參照特定的示範性實施例來顯示並說明，將 被習於此技術者了解的A ’各種型式與細節上的改變可以 在不偏離由隨附圖式與其等效物定義之本發明的精神與範 疇下完成。Is the nozzle configuration width size [m] '❿ ~ "Go table nozzle spacing or nozzle configuration length size [m]. Factor C7 is considered a variable in Example 2, which is an important factor. Even factor Q The size in the number indicates that the equation 4 is a steal, because only the spacing of the glass substrate is taken into account, and the length of the glass substrate is not taken into account, the true size of the factor is m3/min. This is because the length of the glass substrate is not An important factor. In this experiment, the number of nozzles per minute of the nozzle is 〇3 liters left 18 200932695 right. The C/value according to the distance between the nozzle and the glass substrate is recorded in Table 3 below. Table 3 Nozzle spacing〇 ·〇5m0.04m0.015m0.05m glass spacing〇·〇4m0.03m0·008m0·0〇8m Cf [m2/min] 0.0048 0.00563 0.01067 0.00096 As in the record In the case of Table 3 above, wherein the nozzle pitch is mm (0.05 m) and the glass pitch is 8 mm (〇〇〇 8 m), the difference in thickness of the glass-based plate in the vertical direction is from 35 μm. To the range of 50 microns. This range Falling within this specification, and the difference in thickness is in the range of 10 to 15 microns. Because of the boundary with respect to the thickness before etching, the nozzle pitch of 50 mm and the glass pitch of 8 mm are virtually unusable geometry. The present invention also relates to a chemical etching method for reducing the thickness of a glass substrate. In the conventional immersion method, it is difficult to uniformly etch the entire surface of a glass substrate having a large area or precisely control the thickness of the substrate. In addition, since the conventional immersion method increases the squirting pressure of the etchant and causes the gas flow by supplying the etchant from both sides, this causes a structural problem because it is difficult to support the glass substrate against gravity. For these problems, the present invention minimizes the external force on the glass substrate by spraying an etchant from above, and further, for example, has a thickness of 1 gong or a thinner thickness (for example, 〇9 mm, 〇8 mm, A film of 0.6 gal, etc. can be fabricated by etching a TFT-LCD bonded plate having a thickness of 126 mm & 〇 〇 mm. In the invention of the engraved device, the name of the second 19 200932695 can be carried out not only on a connecting plate for TFT_LCD, 〇led and the like, but also on a glass substrate or a germanium wafer which is not yet connected. More into the _ step folder, too chrome ^ less rice: The etching device of the present invention is a process technology, can improve the surface of the temporary mouth, the production efficiency can be achieved at a very low cost. The present invention has been shown and described with respect to the specific exemplary embodiments, and various modifications and changes in detail may be made without departing from the equivalents. The spirit and scope of the invention is completed.
【圖式簡單說明】 上述本發明一定示範性實施例的其他方面、特徵與優 點將連結隨附圖式與上述說明而變得更加明顯。其中： 圖1為根據一傳統方法說明一個基板蝕刻過程的概略 視圖； 圖2為根據本發明說明用於蝕刻玻璃基板之器械之第 一實施例的透視圖；BRIEF DESCRIPTION OF THE DRAWINGS Other aspects, features, and advantages of the present invention will be apparent from the accompanying drawings and appended claims. 1 is a schematic view showing a substrate etching process according to a conventional method; and FIG. 2 is a perspective view showing a first embodiment of an apparatus for etching a glass substrate according to the present invention;
圖3為根據本發明說明一蝕刻玻璃基板過程的第一實 施例； 圖4為根據本發明說明玻璃基板與垂直平面（其中該 垂直平面經由管嘴垂直延伸）之幾何組構的側面與前方立 視圖； 圖5為比較本發明之蝕刻方法與傳統玻璃蝕刻方法的 概略視圖； 圖6為說明被供應至玻璃基板表面蝕刻劑的量及蚀刻 20 200932695 速率與相對於表面品質之間的關係圖； 圖7為說明被供應至玻璃基板表面的蝕刻劑量與垂直 方向之玻璃基板的不同厚度之間的關係圖； 圖8為說明根據玻璃基板間距之不同蝕刻厚度分佈的 概略視圖； 圖9為根據本發明之第一實施例之玻璃基板與管嘴之 間的幾何關係概略視圖；及3 is a first embodiment of a process for etching a glass substrate according to the present invention; FIG. 4 is a side view and a front view of a geometrical structure of a glass substrate and a vertical plane in which the vertical plane extends vertically through the nozzle, in accordance with the present invention; Figure 5 is a schematic view for comparing the etching method of the present invention with a conventional glass etching method; Figure 6 is a graph showing the relationship between the amount of etchant supplied to the surface of the glass substrate and the etching rate of 200932695 versus surface quality; 7 is a view showing a relationship between an etching dose supplied to a surface of a glass substrate and different thicknesses of a glass substrate in a vertical direction; FIG. 8 is a schematic view showing an etching thickness distribution according to a pitch of the glass substrate; A schematic view of the geometric relationship between the glass substrate and the nozzle of the first embodiment of the invention; and
圖10為根據本發明之第二實施例玻璃基板與固定單元 間幾何關係的透視圖》 【主要元件符號說明】 11 管嘴 12 触刻劑 13 玻璃基板 100 器械 101 噴濺單元 102 管嘴頭 103 管嘴 104 1虫刻劑 200 固定單元 201 玻璃基板接觸構件 202 夹子 300 玻璃基板 302 上部分 303 下部分 ❹ 21 200932695 d 間隔 d. 間隔 h 距離 Θ 管嘴的蝕刻劑噴濺角度Figure 10 is a perspective view showing the geometric relationship between the glass substrate and the fixing unit according to the second embodiment of the present invention. [Main component symbol description] 11 nozzle 12 etchant 13 glass substrate 100 device 101 splatter unit 102 nozzle head 103 Nozzle 104 1 insect engraving agent 200 fixing unit 201 glass substrate contact member 202 clip 300 glass substrate 302 upper portion 303 lower portion ❹ 21 200932695 d interval d. interval h distance Θ nozzle etchant spray angle
22twenty two
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| KR1020080002456A KR100860294B1 (en) | 2008-01-09 | 2008-01-09 | An apparatus for etching a glass wafer, and a glass sheet manufactured by the same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI477466B (en) * | 2011-07-08 | 2015-03-21 | M M Tech Co Ltd | Glass thinning system |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100946215B1 (en) | 2009-08-17 | 2010-03-08 | 주식회사 지디 | Spray nozzle system for etching a glass |
| CN101630635B (en) * | 2009-08-25 | 2011-11-30 | 满纳韩宏电子科技(南京)有限公司 | glass substrate etching device |
| KR101108974B1 (en) * | 2009-09-29 | 2012-01-31 | 주식회사 이코니 | An apparatus for etching a glass wafer having the function of removing residual etching solution |
| KR101037171B1 (en) * | 2009-09-29 | 2011-05-26 | 주식회사 이코니 | An apparatus for etching a glass wafer having the function of removing residual etching solution |
| KR101007306B1 (en) * | 2010-02-23 | 2011-01-13 | 주식회사 엠엠테크 | Substrate etching device |
| KR101195374B1 (en) | 2010-07-29 | 2012-10-29 | 주식회사 엠엠테크 | top-down spray type substrate etching device |
| KR101026744B1 (en) | 2010-09-29 | 2011-04-08 | 주식회사 아바텍 | Apparatus for etching a glass substrate |
| KR101168701B1 (en) | 2010-11-15 | 2012-07-30 | (주)에프아이에스 | Eching Apparatus With Guide Blade |
| KR101182200B1 (en) * | 2010-11-18 | 2012-09-14 | (주) 청심이엔지 | Substrate slimming apparatus |
| KR101092471B1 (en) | 2010-11-26 | 2011-12-13 | 주식회사 지디 | Glass etching device for spraying etching liquid from the top |
| JP5730241B2 (en) * | 2011-05-11 | 2015-06-03 | Hoya株式会社 | Manufacturing method of cover glass for electronic device and glass substrate holder for cover glass for electronic device |
| KR101068113B1 (en) | 2011-05-31 | 2011-09-27 | 주식회사 아바텍 | Apparatus for etching a glass substrate |
| KR101151296B1 (en) | 2012-02-03 | 2012-06-08 | 주식회사 엠엠테크 | Apparatus for etching substrate |
| KR101323152B1 (en) * | 2012-02-08 | 2013-11-04 | 신동수 | A thickness monitoring system in etching process of glass substrate |
| CN102659321B (en) * | 2012-05-14 | 2015-03-18 | 汕头市拓捷科技有限公司 | Equipment and method for single-surface thinning of multiple pieces of glass |
| KR102094943B1 (en) * | 2013-03-22 | 2020-03-31 | 삼성디스플레이 주식회사 | Etching apparatus |
| KR101466005B1 (en) * | 2013-06-28 | 2014-11-27 | 주식회사 위스코하이텍 | Apparatus for etching substrate |
| KR101489241B1 (en) | 2013-10-01 | 2015-02-04 | 주식회사 이코니 | Slim etching method for a glass substrate comprising the pre-treatment process |
| CN105366953A (en) * | 2015-11-30 | 2016-03-02 | 武汉华星光电技术有限公司 | Spraying device |
| CN107698168A (en) * | 2017-09-07 | 2018-02-16 | 凯盛科技股份有限公司 | A kind of anti-fragmentation thinning single surface etching bearing basket tool |
| KR102625138B1 (en) * | 2020-10-22 | 2024-01-15 | (주) 엔피홀딩스 | Rollable glass, rollable display device including the same and method for preparing rollable glass |
| CN113979643A (en) * | 2020-12-31 | 2022-01-28 | 安徽金龙浩光电科技有限公司 | Preparation process of glass with glittering sand effect |
| KR20240027709A (en) * | 2021-07-01 | 2024-03-04 | 코닝 인코포레이티드 | How to Etch Glass-Based Sheets |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2103548B (en) * | 1981-08-20 | 1985-01-30 | Glaverbel | Method of reducing light reflection from glass surfaces |
| JP2551123B2 (en) * | 1988-11-04 | 1996-11-06 | 富士通株式会社 | Continuous surface treatment equipment |
| JP3597639B2 (en) * | 1996-06-05 | 2004-12-08 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
| JPH09330661A (en) * | 1996-06-07 | 1997-12-22 | Mitsubishi Electric Corp | Forming method of graphite film |
| US6214127B1 (en) * | 1998-02-04 | 2001-04-10 | Micron Technology, Inc. | Methods of processing electronic device workpieces and methods of positioning electronic device workpieces within a workpiece carrier |
| JP3686011B2 (en) * | 2001-06-11 | 2005-08-24 | 住友精密工業株式会社 | Substrate processing equipment |
| JP3737782B2 (en) * | 2002-06-18 | 2006-01-25 | 淀川ヒューテック株式会社 | Manufacturing method of thin liquid crystal display element |
| TWI243407B (en) * | 2003-06-03 | 2005-11-11 | Dainippon Screen Mfg | Method and apparatus for etching a substrate |
| JP4398262B2 (en) * | 2004-01-08 | 2010-01-13 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
| JP4071220B2 (en) * | 2004-03-17 | 2008-04-02 | 西山ステンレスケミカル株式会社 | Manufacturing method of glass substrate |
| JP4737709B2 (en) * | 2004-03-22 | 2011-08-03 | 日本電気硝子株式会社 | Method for producing glass for display substrate |
| KR100773786B1 (en) | 2005-08-12 | 2007-11-12 | (주)지원테크 | Apparatus of etching a glass substrate |
| KR100741291B1 (en) * | 2006-02-14 | 2007-07-23 | 에버테크노 주식회사 | Liquid crystal display glass slimming apparatus |
| KR20070105699A (en) * | 2006-04-27 | 2007-10-31 | 삼성전자주식회사 | Etching apparatus for glass plate and method of glass etching using the same |
| KR20080008729A (en) * | 2006-07-21 | 2008-01-24 | 삼성전자주식회사 | Method for manufacturing flat panel display and apparatus for shaving outer surface of glass substrate for their use |
| KR200431530Y1 (en) | 2006-08-23 | 2006-11-23 | 김성삼 | writing instrument fixing device |
| KR100865767B1 (en) * | 2007-03-15 | 2008-10-28 | 우진선행기술 주식회사 | Device for slimming of plate and method for slimming of plate |
-
2008
- 2008-01-09 KR KR1020080002456A patent/KR100860294B1/en not_active IP Right Cessation
-
2009
- 2009-01-06 TW TW098100164A patent/TWI400205B/en active
- 2009-01-09 JP JP2009003958A patent/JP4927884B2/en active Active
- 2009-01-09 CN CN2009100014978A patent/CN101481217B/en active Active
- 2009-01-09 CN CN2012100827439A patent/CN102674700A/en active Pending
- 2009-01-09 CN CN2012100827496A patent/CN102674701A/en not_active Withdrawn
-
2011
- 2011-11-30 JP JP2011262953A patent/JP5421979B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI477466B (en) * | 2011-07-08 | 2015-03-21 | M M Tech Co Ltd | Glass thinning system |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009161429A (en) | 2009-07-23 |
| JP4927884B2 (en) | 2012-05-09 |
| TWI400205B (en) | 2013-07-01 |
| CN102674701A (en) | 2012-09-19 |
| JP5421979B2 (en) | 2014-02-19 |
| JP2012051801A (en) | 2012-03-15 |
| CN102674700A (en) | 2012-09-19 |
| KR100860294B1 (en) | 2008-09-25 |
| CN101481217B (en) | 2012-05-09 |
| CN101481217A (en) | 2009-07-15 |
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