CN102674700A - Method for etching glass substrate, glass thin plate, and device for etching glass substrate - Google Patents

Method for etching glass substrate, glass thin plate, and device for etching glass substrate Download PDF

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CN102674700A
CN102674700A CN2012100827439A CN201210082743A CN102674700A CN 102674700 A CN102674700 A CN 102674700A CN 2012100827439 A CN2012100827439 A CN 2012100827439A CN 201210082743 A CN201210082743 A CN 201210082743A CN 102674700 A CN102674700 A CN 102674700A
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glass substrate
etching
spray
glass
spraying
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朴亨根
高星宇
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Econy Co., Ltd.
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ECONY Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133302Rigid substrates, e.g. inorganic substrates

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Liquid Crystal (AREA)

Abstract

The invention relates to a device for etching a glass substrate, and the device is advantaged by reducing thickness of the glass substrate via etching the glass substrate. More specifically, the device includes a fixing unit provided under one or more of the glass substrates to detachably fix and support the glass substrate at a predetermined inclination with respect to the ground; and a spray unit provided above the glass substrate to spray etchant to the glass substrates and a glass thin plate manufactured by the device. The spray unit includes one or more nozzle heads and one or more nozzles for spraying the etchant. A terminal tip of the nozzles is spaced from the glass substrates at a predetermined distance, which is determined by a pitch between the nozzles and an etchant spray angle of the nozzles.

Description

Glass substrate etching method, sheets of glass and glass substrate etching device
The application is that application number is 200910001497.8, the applying date is on January 9th, 2009, denomination of invention is divided an application for the application for a patent for invention of " be used for the device of etching glass thin slice and the glass board material that utilizes this device to process ".
Technical field
The present invention relates to reduce the device of thickness of glass substrate through the etching glass substrate; More particularly; Relate to and a kind ofly it is characterized in that above-mentioned glass substrate is arranged with more than one at least; Possess the fixing part that makes above-mentioned glass substrate favour ground and can fix and dismantle above-mentioned glass substrate in above-mentioned glass substrate bottom, and possess the glass substrate etching device of the injecting-unit that etching reagent is sprayed and the sheets of glass of utilizing this device to process downwards on above-mentioned glass substrate top.
Background technology
Along with modern society in advanced IT application, sealed cell and related components are in significantly development and widespread use.Wherein, with regard to the display unit of display image, acceleration for TV with or the research used etc. of the monitor apparatus used of PC.Thus, for the sheets of glass of on substrate indispensable on the display unit, using and to the research of the making method of this sheets of glass also in acceleration.
The prior art of making light and thin display panel generally includes mechanical polishing method and chemical wet engraving method.Though at the early stage of development of display equipment owing to do not need thin panel and widespread use mechanical polishing method as thin as a wafer, the ultra-thin product of beginning to demand recently, thus bring into use the good chemical wet engraving method of productivity.
In above-mentioned Wet-type etching method; What in the making of Thin Film Transistor-LCD (TFT-LCD), use at first is dip coating; Although spray method and jetting method are more advanced than dip coating; But what be suitable for is to be similar to above-mentioned dip-coating ratio juris, just the disseminating with to remove principle different of the providing of etching reagent, resultant of reaction on macroscopic view.
Above-mentioned once chemical wet engraving method is briefly described; Above-mentioned Wet-type etching method utilization be after etching reagent stir to finish the etching reagent main ingredient promptly the main ingredient of [H+], [HF], [HF2-] and glass substrate be the chemical reaction between the O-Si-O (SiO2), above-mentioned reaction formula is following:
SiO2+4HF→SiF4+2H2O
The step that the etching reagent that use comprises HF carries out the etching glass substrate can be divided into following 5 steps, these 5 etched characteristics in the step left and right sides.These 5 steps are: (1) is diffused into etching reagent the diffusion layer that closes on glass substrate; (2) composition of etching reagent is attached on the surface of glass substrate; (3) composition of etching reagent and glass substrate carry out chemical reaction; (4) resultant of reaction that is generated behind the chemical reaction breaks away from glass substrate; (5) resultant of reaction removes to outside the diffusion layer that closes on glass substrate.
To the Wet-type etching method that utilizes the above-mentioned principles of chemistry is that the technology of dip coating, spray method and jetting method is observed as follows.Above-mentioned dip coating is in etching bath, to hold etching reagent and make glass substrate be immersed in back generation bubble bottom etching bath in the above-mentioned etching reagent.The flow phenomenon that occurs etching reagent because of this bubble on the surface of glass substrate.Here, the disengaging of the diffusion of above-mentioned bubble and etching reagent, resultant of reaction and removing outside diffusion layer are relevant.Because above-mentioned bubble has increased the kinetic energy of etching reagent and resultant of reaction, therefore help acceleration contact, diffusion and disengaging.
In other words, bubble is used for apace to glass substrate provides new etching reagent, and removes resultant from glass baseplate surface.With regard to regard to the above-mentioned dip coating of above-mentioned principle work,, thereby have and insert in the boxes many glass substrates and disposable input makes the productivity advantage of higher because etching reagent has been full of etching bath.The shortcoming of above-mentioned dip coating is owing to resultant of reaction still remains in the etching bath, thereby to cause these resultant of reaction to be bonded at the detrimentally affects such as surface of glass substrate.Based on aforesaid reason, exist to be difficult for through increasing the shortcoming that etch quantity reduces thickness of glass substrate and needs a large amount of etching reagents to come the above-mentioned glass substrate of etching.
What develop for the defective that remedies aforesaid dip coating is exactly spray method.Above-mentioned spray method is more advanced than dip coating qualitatively.As shown in Figure 1, above-mentioned spray method sprays etching reagent 12 from nozzle 11 to glass substrate 13.Step based on the dip coating of the etching step of etching principle and above description is the same.Yet above-mentioned spray method uses the instrument as atomizer, and etching reagent is injected perpendicularly on the glass substrate, makes that the kinetic energy of etching reagent is very big, and can be more fast and new etching reagent is provided equably and removes resultant.In addition, compare with above-mentioned dip coating, spray method can obtain higher surface quality and under same temperature, have higher rate of etch.
Above-mentioned spray method, owing to remove resultant of reaction and etching reagent easily constantly in groove and etching space circulation, thereby can use one to have the comparatively large capacity groove.In addition, above-mentioned spray method since etching reagent through the processing reaction resultant and constantly use, thereby have and can keep surface quality and can reduce the advantage of the usage quantity of etching reagent with fabulous state.Yet, under according to the situation of above-mentioned spray method, can only handle glass substrate one by one, thereby have the significantly reduced problem of productivity.
Develop the problem that jetting method is mentioned more than having overcome, but jetting method can be regarded as the combination of dip coating and injection method.Above-mentioned fluid jet fills up etching bath and glass substrate is immersed powerful the flowing so that play a part like the bubble in the dip coating that the back produces etching reagent in a side in the etching reagent with etching reagent.In addition, new etching reagent is constantly supplied to etching bath, the etching reagent that overflows etching bath reclaims again and utilizes.Though above-mentioned fluid jet can be boosted productivity, it has a shortcoming that initial cost is very high.
Summary of the invention
Technical scheme of the present invention proposes in order to solve aforesaid problem; The purpose of this invention is to provide a kind of sheets of glass that can sheets of glass is made into the glass substrate etching device of more thin thin plate easily and utilize this device making and quality to improve; The characteristic of this device is; Above-mentioned glass substrate is arranged with more than one at least; Possess the fixing part that makes above-mentioned glass substrate favour ground and can fix and dismantle above-mentioned glass substrate in above-mentioned glass substrate bottom, possess the injecting-unit that etching reagent is sprayed on above-mentioned glass substrate top downwards.
In order to reach aforesaid purpose; According to glass substrate etching device of the present invention; It is characterized in that above-mentioned glass substrate is arranged with more than one at least; Possess the fixing part that makes above-mentioned glass substrate favour ground and can fix and dismantle above-mentioned glass substrate in above-mentioned glass substrate bottom, possess the injecting-unit that etching reagent is sprayed on above-mentioned glass substrate top downwards.
It is desirable to, form nozzle and the injector head that comprises at least more than one with above-mentioned injecting-unit, is characteristic from said nozzle with the atomized spray etching reagent.
It is desirable to, be characteristic with the spacing between above-mentioned glass substrate and the nozzle end by the disposition interval of nozzle and the etching reagent spray angle decision of nozzle.
It is desirable to, be that 0 degree to 45 degree are characteristic with the obliquity that vertical surface was become of the vertical perforation of described glass substrate and nozzle.
It is desirable to, be that 5-300mm is a characteristic with the spacing that is arranged between a plurality of glass substrates on the described fixing part.
It is desirable to; Also to comprise the etching reagent holding tank that is connected with above-mentioned injecting-unit; Possess the reactant storage tanks of collection from the reactant of the etching reagent of nozzle ejection and glass substrate in the lower end of said fixing parts, unreacted etching reagent flows into above-mentioned etching reagent holding tank and circulates from above-mentioned reactant storage tanks and is characteristic.
It is desirable to, comprise that with described reactant storage tanks the filter element that is used to separate above-mentioned reactant and above-mentioned unreacted etching reagent is a characteristic.
It is desirable to, be HF with described etching reagent, and the rate of etch of glass substrate is according to the H in the above-mentioned etching reagent +, HF and HF 2 -Concentration and be changed to characteristic.
It is desirable to, being formed with the glass substrate contact component that is used for fixing above-mentioned glass substrate and makes reactant flow to the reactant storage tanks easily with described fixing part is characteristic.
In addition,,, it is characterized in that this sheets of glass is that thickness is that 0.3-1mm, area are 1000 * 1200mm according to glass substrate of the present invention in order to reach aforesaid purpose 2To 1100 * 1300mm 2The sheets of glass of Thin Film Transistor-LCD.
As stated; According to glass substrate etching device through the invention described above; Can sheets of glass be made into thin thin plate with being more prone to thereby can boost productivity; Above-mentioned glass substrate etching device makes etching reagent flow along glass substrate, thereby improves the glass baseplate surface quality, but is lower than 0.3mm, area greater than 1000 * 1200mm owing to have etched thickness 2Advantages such as ultra-thin plate, therefore, have the effect of increasing economic efficiency.
Description of drawings
Fig. 1 is that the figure that comes the processing procedure of etching glass substrate through prior art has been described in expression;
Fig. 2 is the stereographic map according to the glass substrate etching device of the first embodiment of the present invention;
Fig. 3 is the figure of expression according to the glass etching processing procedure of the first embodiment of the present invention;
Fig. 4 is the side-view and the front view of geometric configuration structure of vertical surface and substrate of the vertical perforation of expression nozzle of the present invention;
Fig. 5 has carried out correlated comparison diagram to prior art and glass etching method of the present invention;
Fig. 6 be the expression etching reagent that is provided to glass baseplate surface amount and rate of etch and and surface quality between the graphic representation that concerns;
Fig. 7 is the graphic representation of the difference in thickness about amount and the substrate of the expression etching reagent that is provided to substrate surface;
Fig. 8 is the figure of expression according to the etched thickness difference distribution embodiment that spacing produced of glass substrate;
Fig. 9 is the figure of expression according to the geometric relationship of the glass substrate of the first embodiment of the present invention and nozzle; And
Figure 10 is glass substrate and the figure of the geometric relationship between the fixing part that representes according to a second embodiment of the present invention.
Embodiment
Specify embodiments of the invention according to accompanying drawing below.In the accompanying drawings; Fig. 1 is that the figure that comes the processing procedure of etching glass substrate through prior art has been described in expression; Fig. 2 is the stereographic map according to the glass substrate etching device of the first embodiment of the present invention, and Fig. 3 is the figure of expression according to the etching glass basal plate making process of the first embodiment of the present invention.
In addition; Fig. 4 is the side-view and the front view of the geometric configuration structure of expression nozzle of the present invention and glass substrate; Fig. 5 has carried out correlated comparison diagram to prior art and glass etching method of the present invention, Fig. 6 be the expression etching reagent that is provided to glass baseplate surface amount and rate of etch and and surface quality between the graphic representation that concerns.
In addition; Fig. 7 is the graphic representation of the difference in thickness about amount and the glass substrate of the expression etching reagent that is provided to substrate surface; Fig. 8 is the figure of expression according to the etched thickness difference distribution embodiment that spacing produced of glass substrate, and Fig. 9 is the figure according to the geometric relationship between the glass substrate of the first embodiment of the present invention and the vertical vertical surface that connects nozzle.
In addition, Figure 10 is according to a second embodiment of the present invention glass substrate and the figure of the geometric relationship between the fixing part.
With reference to Fig. 2 and Fig. 3, the present invention relates to surface through the above-mentioned glass substrate 300 of etching and make the glass substrate etching device 100 of thickness attenuation of glass substrate 300.Above-mentioned etching system 100 comprises: glass substrate 300; Spray the injecting-unit 101 of etching reagent downwards; And the fixing part 200 of fixing above-mentioned glass substrate 300.
Above-mentioned glass substrate 300 will be arranged more than one at least.Can several thin glass substrates of disposable making in the above-mentioned etching system thereby several above-mentioned glass substrates 300 are encased in.And above-mentioned glass substrate 300 need comprise silicon (Si) or silicon-dioxide (SiO 2), be the HF etching so that can be etched agent.But be not limited thereto,, can arrange above-mentioned glass substrate 300 separately according to above-mentioned etching reagent 104.
In addition, be formed with fixing part 200 in the bottom of above-mentioned glass substrate 300, this fixing part can fixing glass substrate 300, and makes glass substrate 300 favour ground.At this moment, substrate need not to become 90 degree exactly with the etching reagent feeding mechanism.Said fixing parts 200 are processed by macromolecule resin or organic materials etc., and should in fixing glass substrate 300, make with the contact area of glass substrate 300 minimum.This is because etching reagent need be injected on the above-mentioned glass substrate 300 and and glass substrate nothing left ground reaction.Yet as long as can fix above-mentioned glass substrate 300, said fixing parts 200 just are not limited to above-mentioned macromolecule resin etc.
In addition; Said fixing parts 200 can be provided with the groove that separates each other and fix several above-mentioned glass substrates 300; It is identical so that snap in fixingly that the width of said fixing parts 200 can be arranged to width with above-mentioned glass substrate 300, and glass substrate 300 is fixed on the fixing part 200 with the area of minimum.
And said fixing parts 200 adopt following mode.Because several glass substrate 300 can insert and be fixed on the fixing part 200; Thereby can make fixing part 200 become the one that is inserted with glass substrate 300 and put into etching area above-mentioned glass substrate 300 is carried out etching, and then take out above-mentioned one.As stated, because fixing part 200 can put into etching area easily and take out from etching area, therefore, several glass substrates 300 of etching simultaneously.As stated, because according to circumstances can glass substrate of etch processes 300 or a plurality of glass substrates 300, thereby the present invention is effective.In addition, thus since the present invention be suitable for spray method can etching than the more glass substrate 300 of dip coating, so productivity and economic benefit are all very high.
In addition, because glass substrate 300 is not influenced by external force basically, therefore, said fixing parts 200 can according to circumstances be realized flexibly.With reference to Figure 10, said fixing parts 200 possess clip 202, and coming with this can fixing glass substrate 300.This is because if said fixing parts 200 continue to contact with glass substrate 300, thereby then resultant of reaction accumulates in bad die such as the surface quality that occurs spot on the said fixing parts 200.In the present invention owing to can possess fixing part 200, thereby has the very big advantage of design freedom according to the kind or the operation of substrate.Thereby this is etching reagent 104 be from the top of glass substrate 300 along substrate surface be ejected into the influence that can make external force on the glass substrate minimum so.
Be provided with the injecting-unit 101 that sprays etching reagent 104 from the top of above-mentioned glass substrate 300.Owing to be arranged on above-mentioned glass substrate 300 tops etching reagent 104 is supplied from the top down, thereby glass substrate 300 suffered external force produce hardly.This is because because glass substrate 300 suffered external force are very little, make to the very easy event of the design of supporting structure.Because of aforesaid reason, be very beneficial for making glass substrate 300 to be thinned to below the 0.1mm, and make the etching area reach 1000 above * 1250mm of the 4th generation 2More than.
Above-mentioned injecting-unit 101 comprises at least more than one nozzle 103 and injector head 102, sprays etching reagent from said nozzle 103 with spray pattern.Said nozzle head 102 forms more than one, on each injector head 102, comprises more than one nozzle 103.
With reference to Fig. 5,, adopt spray method owing to use a spot of etching reagent just can bigger area and the etched thickness of etching can suitably adjust.Because injecting-unit 101 is formed on above-mentioned glass substrate 300 tops, thereby when being sprayed, etching reagent 104 is applied to the minimize pressure on the glass substrate 300.In addition, etching reagent 104 is with after top, middle part or the bottom of glass substrate 300 contact, because of surface tension on one side along next rim etching glass substrate 300 surface of glass substrate 300 spontaneous currents.Contrast, existing spray method is because etching reagent 12 is directly injected on the glass substrate 13, thereby the suffered pressure of glass substrate 13 is bigger when spraying.
With reference to Fig. 4, the spacing of above-mentioned glass substrate 300 and the end of nozzle 103 is determined by the spray angle of the etching reagent 104 of the disposition interval of nozzle 103 and nozzle 103.Above-mentioned glass substrate 300 as above determines with the spacing of the end of nozzle 103, thereby prevents the part that etching reagent 104 reaches.Above-mentioned glass substrate 300 of the present invention is that h is determined by following formula 1 with the spacing of the end of nozzle 103:
[formula 1]
h ≥ N p 2 Tan θ 2 h ≥ H p 2 Tan θ 2 . . . Formula 1
Wherein, parameter N PBe spacing between the nozzle, H pBe spacing between the injector head, and θ is a nozzle spray angle.
Spacing between nozzle 103 and the glass substrate 300 should have the geometrical property that satisfies above-mentioned two formulas simultaneously.If the spacing between the outermost contour edge point of above-mentioned glass substrate 300 and outermost 's the nozzle 103 is made as d, then should satisfies following formula 2 and just can prevent the part that etching reagent 104 reaches.
[formula 2]
d ≤ h Tan θ 2 . . . Formula 2
In addition, if the spacing between the outermost contour edge point of the glass substrate 300 of opposite side and outermost 's the nozzle 103 is made as d ', then d ' can must satisfy following formula with 3 expressions of following formula.
[formula 3]
d ′ ≥ h Tan θ 2 . . . Formula 3
The obliquity that is become between the vertical surface of above-mentioned glass substrate 300 and the vertical perforation of nozzle is between 0 to 45 degree.With reference to Fig. 9, angulation is 0 degree between the vertical surface of best above-mentioned glass substrate 300 and vertical perforation said nozzle 103.When the angle between the vertical surface of glass substrate 300 and the vertical perforation of nozzle 103 is inclined to 30 when spending, produce difference in thickness up and down hardly.Yet, if above-mentioned obliquity tilts to 47 when spending, because resultant of reaction can not successfully be removed, thereby the situation of thickness thickening of the bottom of glass substrate 300 takes place.Therefore, be preferably in the above-mentioned obliquity of formation in the inclination range recited above.
Be arranged in the spacing 5mm-300mm preferably between a plurality of glass substrates 300 on the said fixing parts 200.Why so the spacing between the above-mentioned glass substrate 300 of regulation is in order to boost productivity through a large amount of glass substrate 300 of while etching.In practice, when in identical space, comparing with 40mm spacing arranged glass substrate with 8mm spacing arranged glass substrate, the productivity height differs 5 times, thereby the spacing between the glass substrate is the important factor of left and right sides productivity.Reducing the arrangement pitches of above-mentioned glass substrate 300 can boost productivity, but in order to reduce the nozzle arrangement spacing, also need reduce the spacing between the injector head 102 that is provided with nozzle.The spacing that reduces between the said nozzle head 102 also need reduce pipe diameter, and at this moment, the etching reagent difficulty to nozzle 103 supply q.s needs to use the component of non-standard specification, thereby the problem that manufacturing cost increases takes place.In addition, also be difficult to safeguard the shortcoming of said nozzle 103.
Therefore, the spacing between the above-mentioned glass substrate 300 is preferably confirmed in above-described distance range.In addition because the quantity of the substrate once put into represent the whole etch quantity of etching work procedure, thereby the specification that needs the consideration etching system especially groove capacity, can evenly keep from the pipeline of the spraying pressure of nozzle ejection and the capacity of pump etc.
Be equipped with the etching reagent holding tank at above-mentioned injecting-unit 101, be arranged to this etching reagent holding tank and link to each other with above-mentioned reactant storage tanks.In above-mentioned etching reagent holding tank, fill HF, this HF ionic concentration is adjusted with amount operation according to the present invention.
The reactant storage tanks that possesses the reactant of etching reagent 104 that collection sprays from nozzle 103 and glass substrate 300 in the lower end of said fixing parts 200, unreacted etching reagent flows into the etching reagent holding tank and circulates from above-mentioned reactant storage tanks.Above-mentioned etching reagent 104 reacts with glass substrate 300 and the reactant that generates flows into the reactant storage tanks fast.Above-mentioned reactant storage tanks links to each other with the etching reagent holding tank or shares a space and makes unreacted etching reagent circulation.But thereby make the unreacted etching reagent in the above-mentioned reactant flow into the new etching reagent of etching reagent holding tank fast supply once more and remove resultant, thereby improve the surface quality characteristic.Above-mentioned reactant storage tanks can comprise filter element to separate above-mentioned reactant and above-mentioned unreacted etching reagent 104.
Above-mentioned etching reagent 104 is HF, and the rate of etch of glass substrate is by the H in the above-mentioned etching reagent 104 +, HF and HF 2Concentration decision.Promptly, rate of etch is according to above-mentioned H +, HF and HF 2Concentration and change, rate of etch is disproportionate with the amount of lip-deep etching reagent that is fed to above-mentioned glass substrate 300.
With reference to Fig. 6, as long as a certain amount of etching reagent 104 of supply can be guaranteed rate of etch and surface quality.Because the amount of above-mentioned etching reagent 104 and rate of etch and surface quality do not have proportionlity, thereby with regard to etching reagent 104, as long as the necessary above amount of liquid of supply.In addition; With reference to Fig. 6 and Fig. 7; If the substrate bottom includes the above etching reagent composition of necessary amount,, between the top 302 of glass substrate 300 and bottom 303, can there be difference in thickness and mass discrepancy even then etching reagent 104 is supplied with from the top of above-mentioned glass substrate 300 yet.That is to say,, can not only guarantee that then rate of etch can also guarantee favorable surface quality if necessary above etching reagent is permanently connected to the surface of glass substrate 300.
With reference to Figure 10, said fixing parts 200 of the present invention are formed with and are used for fixing above-mentioned glass substrate 300 and make reactant flow to the glass substrate contact component 201 of reactant storage tanks easily.Glass substrate contact component 201 is round members, by formations such as the material of anti-HF, PVC, polyetheretherketone (Peek), tetrafluoroethylene.This glass substrate contact component 201 is not limited to above material of mentioning and shape, as long as fixing glass substrate 300 and be beneficial to etching reagent 104 and flow out with reactant better then is not limited to this.In addition, above-mentioned glass substrate contact component 201 makes the downward to greatest extent Channel Group of resultant of reaction through contacting with 300 of glass substrates, and the side has the spacing bigger than the thickness of substrate.
The common thickness range of the glass substrate of being made by glass substrate etching device recited above also can be fabricated onto the thickness also thinner than 0.1mm between 0.3-1mm.And it is 1000 * 1200mm that above-mentioned glass etching device can be made areal extent with above-mentioned thickness 2To 1100 * 1300mm 2Between film-type transistor (TFT-LCD) sheets of glass.
Be a preferred embodiment of the present invention below, with the thickness of the upper and lower of this sight glass substrate 300 difference with glass substrate 300 arrangement pitches.In addition, the thickness of the upper and lower through another embodiment sight glass substrate 300 is with the difference of the spacing between spacing between the said nozzle 103 and the glass substrate 300.
Embodiment 1
Reach a certain amount of difference in thickness up and down that produces hardly on the glass substrate when above in order to verify when etching reagent; Upper nozzle is with the spacing arrangement of 50mm anyhow; Make glasses interval become infinity, 90mm and 30mm, and changed the amount that supplies to the etching reagent on the substrate surface.This moment employed nozzle spray volume be the 0.1-2 liter/minute, the area of etching substrates is 370 * 470mm 2, and thickness is 0.63mm.
Table 1
Glasses interval Infinite 90mm 30mm
Difference in thickness up and down 1-2μm 5-10μm l5-20μm
Can know with reference to above table 1 and Fig. 8, then can obtain desired specifications at the etching reagent of supplying with more than necessity on the aforesaid substrate.More than can know; The amount that then increases the etching reagent that provides from top as if homogeneous thickness distribution about expecting gets final product; Then increase the amount of the etching reagent that provides from top if want to boost productivity and shorten the glass arrangement pitches and get final product, like this can a large amount of glass substrate of while etching in identical space.
Embodiment 2
At present the thickness unified specification of LCD substrate be approximately ± 20 μ m, in order to satisfy this specification, through changing between the nozzle and the spacing between the substrate has been observed the top 302 of the glass substrate that therefore brings and the difference in thickness between the bottom 303.In this embodiment, TFT-LCD alkali-free glass substrate low density glass such as (NEGOA21 or SCP E2K) is of a size of 590 * 670mm 2Combination panel (thickness is 1.26mm) etch into 0.6mm.
Table 2
Injector spacing 50mm ?40mm ?15mm 50mm
Glasses interval 40mm ?30mm ?8mm 8mm
Substrate is difference in thickness up and down 19-26μm ?13-21μm ?9-18μm 35-50μm
The spray volume of the nozzle that uses among the embodiment 2 is 0.3 liter/minute.In the practice, substrate is arranged with the 40mm spacing and compared with the arrangement of 8mm spacing, productivity differs 5 times, thereby the spacing between the substrate is an important factors of left and right sides productivity.Can boost productivity though reduce the substrate arrangement pitches, need reduce the spacing of the injector head that is provided with nozzle for the arrangement pitches that reduces nozzle.The spacing that reduces between the injector head also need reduce pipe diameter; In this case, just very difficult to the etching reagent that nozzle is enough, needs use the component of non-standard specification; Thereby the shortcoming that exists manufacturing cost to increase, also there is the shortcoming that is difficult to safeguard.
In addition, the maintenance of nozzle 102 is also very difficult.Because the quantity of the glass substrate once put into represent the whole etch quantity of etching work procedure, thus the specification that needs the consideration etching system especially groove capacity, can evenly keep from the pipeline of the spraying pressure of nozzle ejection and the capacity of pump.Need supply with the etching reagent more than a certain amount of to the surface in order to ensure the quality of indicating meter etc., according to this experiment, C fShown in formula 4.
[formula 4]
C f = Nozzle × G Ptch Nh Ptch × Nv Ptch . . . Formula 4
Wherein, Nozzle representes the PM spray volume (m of nozzle 3/ min), G PtchThe arrangement pitches of expression substrate or the arrangement size (m) of substrate, Nh PtchThe transverse pitch of expression nozzle or the arrangement transverse pitch size (m) of nozzle, Nv PtchThe longitudinal pitch of expression nozzle or the arrangement longitudinal pitch size (m) of nozzle.
In the present invention, the C of aleatory variableization fBe criticality factor, this has only considered the spacing of substrate and has not considered the length thereby the C of substrate on formula is used fUnit become m 2/ min, and in fact should be m 3/ min.This is because the length of substrate is not event of important factor.
In this experiment, the PM spray volume of nozzle has approximately used 0.3 liter.C according to the spacing of the spacing of nozzle and glass substrate fBe worth as shown in table 3.
Table 3
Injector spacing 0.05m 0.04m 0.015m 0.05m
Glasses interval 0.04m 0.03m 0.008m 0.008m
Cf(m 2/min) 0.0048 0.00563 0.01067 0.00096
Observing table 3, is that 50mm (0.05m), glass substrate spacing are under the situation of 8mm (0.008m) in injector spacing, and the substrate scope of difference in thickness up and down is from 35 to 50 μ m; Its part is within specification; But because many glass substrates of etching simultaneously, and, to guarantee the difference in thickness that etching is preceding after the etching at least because the scope of etching prebasal plate difference in thickness is 10-15 μ m; Therefore, the substrate spacing 8mm for injector spacing 50mm is difficult to the actual geometric configuration that is suitable for.
What the present invention relates on the other hand, is than the method relevant with method for chemially etching in the method for unfertile land making glass substrate.In existing dip coating, exist and be difficult to the etching equably and the problem of control thickness difficulty exactly.In addition,, therefore, say, exist and support large-area glass substrate to overcome the very problem of difficulty of terrestrial gravitation from structure because existing spray method is supplied with vaporific etching reagent from both sides, thereby has increased the spraying pressure of etching reagent and caused air-flow.
In order to address the above problem, external force is minimized thereby the present invention sprays etching reagent from glass substrate top.In addition, for above-mentioned glass substrate, be that the TFT-LCD of 1.26mm or 1.0mm combines panel can produce thickness to be the for example film below the 1.0mm (0.9mm, 0.8mm, 0.6mm etc.) through etched thickness.Etching system of the present invention not only can also be implemented meagre etching before to combining to the combination panel of indicating meters such as above-mentioned TFT-LCD, OLED on glass substrate or the silicon wafer.In addition, etching system of the present invention is an operation technology that productivity when can improve surface quality is good and cost of manufacture is lower.
The present invention is illustrated according to an illustrated embodiment in the accompanying drawing, but this only is an illustration, will be understood by those skilled in the art that thus and can carry out other embodiment that various distortion and derivation are equal to.Therefore, real technical protection scope of the present invention should be by the technological thought decision of claims of being enclosed.

Claims (10)

1. a glass substrate etching method is characterized in that, may further comprise the steps:
A) step is arranged said glass substrate with a plurality of glass substrates with respect to the mode in terrain slope 45 degree~90 degree scopes; And
B) step is from being positioned at than a plurality of places of the position of said glass-based plate hight with predetermined spraying (spray) angle the substrate surface of said glass substrate spray downwards (spray) etching reagent and the said glass substrate of etching.
2. a glass substrate etching method is characterized in that, may further comprise the steps:
A) step is fixed on a plurality of glass substrates on the said stationary installation with the mode of spending in~90 degree scopes with respect to the bottom surface inclination 45 of stationary installation; And
B) step is from being disposed at than the spraying that comprises a plurality of nozzles (spray) device of the position of said glass-based plate hight with predetermined spraying (spray) angle the substrate surface of said glass substrate spray downwards (spray) etching reagent and the said glass substrate of etching.
3. glass substrate etching method as claimed in claim 2 is characterized in that,
Interval between the end of said nozzle and the upper end of said glass substrate is adjusted according to etching reagent spraying (spray) angle of spacing between the said nozzle and said nozzle, so that all parts of said glass substrate all are exposed within the spray regime of said etching reagent.
4. glass substrate etching method as claimed in claim 2 is characterized in that,
Said spraying (spray) device possesses a plurality of injector heads, and said a plurality of injector heads comprise a plurality of nozzles respectively,
Interval between the end of said nozzle and the upper end of said glass substrate is adjusted according to etching reagent spraying (spray) angle of spacing between the said injector head and said nozzle, so that all parts of said glass substrate all are exposed within the spray regime of said etching reagent.
5. like each described glass substrate etching method in the claim 2~4, it is characterized in that,
In bottom surface inclination 60 degree~90 degree scopes of said a plurality of glass substrate with respect to said stationary installation.
6. like each described glass substrate etching method in the claim 2~4, it is characterized in that,
Further comprising the steps of:
After said a) step and said b) before the step, said stationary installation is put into the step of the below of said spraying (spray) device; And
At said b) after the step, the step that said stationary installation is removed from the position of the below of said spraying (spray) device.
7. glass substrate etching method as claimed in claim 5 is characterized in that,
Said stationary installation comprises the clip (202) that is used to support said glass substrate and is used for a parts that contact (201).
8. a sheets of glass uses the described glass substrate etching method of claim 5 to make.
9. a glass substrate etching device reduces the thickness of said glass substrate through the etching glass substrate, it is characterized in that, comprising:
Stationary installation, this stationary installation can support said glass substrate separably with the mode that a plurality of glass substrates are spent with respect to bottom surface inclination 45 degree~90 of said etching system; And
Spraying (spray) device; This spraying (spray) device is arranged on the top than said glass-based plate hight; And be used for, and comprise a plurality of nozzles and a plurality of injector head with predetermined spraying (spray) angle the downward spraying in surface (spray) etching reagent to said glass substrate
Said etching reagent spraying (spray) angle (θ) of spacing (h) between the end of said nozzle and the said glass substrate and spacing (NP) between the said nozzle and said nozzle satisfies following formula; So that all parts of said glass substrate all are exposed within the spray regime of said etching reagent
h ≥ N p 2 tan θ 2 .
10. a glass substrate etching device reduces the thickness of said glass substrate through the etching glass substrate, it is characterized in that, comprising:
Stationary installation, this stationary installation can support said glass substrate separably with the mode that a plurality of glass substrates are spent with respect to bottom surface inclination 45 degree~90 of said etching system; And
Spraying (spray) device, this spraying (spray) device is arranged on the top than said glass-based plate hight, and is used for predetermined spraying (spray) the angle downward spraying in surface (spray) etching reagent to said glass substrate,
Said etching reagent spraying (spray) angle (θ) of spacing (h) between the end of said nozzle and the said glass substrate and spacing (Hp) between the said injector head and said nozzle satisfies following formula; So that all parts of said glass substrate all are exposed within the spray regime of said etching reagent
h ≥ H p 2 tan θ 2 .
CN2012100827439A 2008-01-09 2009-01-09 Method for etching glass substrate, glass thin plate, and device for etching glass substrate Pending CN102674700A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
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Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100946215B1 (en) 2009-08-17 2010-03-08 주식회사 지디 Spray nozzle system for etching a glass
CN101630635B (en) * 2009-08-25 2011-11-30 满纳韩宏电子科技(南京)有限公司 glass substrate etching device
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4505781A (en) * 1981-08-20 1985-03-19 Glaverbel Method of reducing light reflection from glass surfaces
US6214127B1 (en) * 1998-02-04 2001-04-10 Micron Technology, Inc. Methods of processing electronic device workpieces and methods of positioning electronic device workpieces within a workpiece carrier
JP2002362945A (en) * 2001-06-11 2002-12-18 Sumitomo Precision Prod Co Ltd Substrate treating apparatus
CN1574251A (en) * 2003-06-03 2005-02-02 大日本网目版制造株式会社 Substrate etching method and etching disposal device
CN1669967A (en) * 2004-03-17 2005-09-21 西山不锈化学股份有限公司 Glass panel surface etching method and apparatus, glass panel and flat display
KR100741291B1 (en) * 2006-02-14 2007-07-23 에버테크노 주식회사 Liquid crystal display glass slimming apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2551123B2 (en) * 1988-11-04 1996-11-06 富士通株式会社 Continuous surface treatment equipment
JP3597639B2 (en) * 1996-06-05 2004-12-08 大日本スクリーン製造株式会社 Substrate processing apparatus and substrate processing method
JPH09330661A (en) * 1996-06-07 1997-12-22 Mitsubishi Electric Corp Forming method of graphite film
JP3737782B2 (en) * 2002-06-18 2006-01-25 淀川ヒューテック株式会社 Manufacturing method of thin liquid crystal display element
JP4398262B2 (en) * 2004-01-08 2010-01-13 大日本スクリーン製造株式会社 Substrate processing equipment
JP4737709B2 (en) * 2004-03-22 2011-08-03 日本電気硝子株式会社 Method for producing glass for display substrate
KR100773786B1 (en) 2005-08-12 2007-11-12 (주)지원테크 Apparatus of etching a glass substrate
KR20070105699A (en) * 2006-04-27 2007-10-31 삼성전자주식회사 Etching apparatus for glass plate and method of glass etching using the same
KR20080008729A (en) * 2006-07-21 2008-01-24 삼성전자주식회사 Method for manufacturing flat panel display and apparatus for shaving outer surface of glass substrate for their use
KR200431530Y1 (en) 2006-08-23 2006-11-23 김성삼 writing instrument fixing device
KR100865767B1 (en) * 2007-03-15 2008-10-28 우진선행기술 주식회사 Device for slimming of plate and method for slimming of plate

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4505781A (en) * 1981-08-20 1985-03-19 Glaverbel Method of reducing light reflection from glass surfaces
US6214127B1 (en) * 1998-02-04 2001-04-10 Micron Technology, Inc. Methods of processing electronic device workpieces and methods of positioning electronic device workpieces within a workpiece carrier
JP2002362945A (en) * 2001-06-11 2002-12-18 Sumitomo Precision Prod Co Ltd Substrate treating apparatus
CN1574251A (en) * 2003-06-03 2005-02-02 大日本网目版制造株式会社 Substrate etching method and etching disposal device
CN1669967A (en) * 2004-03-17 2005-09-21 西山不锈化学股份有限公司 Glass panel surface etching method and apparatus, glass panel and flat display
KR100741291B1 (en) * 2006-02-14 2007-07-23 에버테크노 주식회사 Liquid crystal display glass slimming apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104513017A (en) * 2013-10-01 2015-04-15 伊科尼有限公司 Glass substrate surface pretreatment process and method for thinning and corroding glass substrates

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