200903689 九、發明說明 【發明所屬之技術領域】 本發明係爲了藉由收納 晶圓的半導體機攣收納容器 來阻止在前述半導體晶圓表 氣體塡充於前述半導體晶圓 該裝置之除去半導體晶圓表 【先前技術】 以往，在微環境式潔淨 體晶圓之微細化向前邁進， 是，在藉由鹵系氣體的蝕刻 體與乾空氣中的水分反應而 圓的腐触，而成爲大的問題 工後的晶圓收納於半導體晶 空氣或氮氣體予以置換，來 晶圓之腐蝕的方法。 另外，在前述微環境式 雖將晶圓收納於半導體晶圓 其待機，但是對半導體晶圓 體晶圓收納容器搬運中，半 電，而發生半導體電路的靜 附著於晶圓表面等之問題， 導體晶圓收納容器的材料混 在半導體製造所使用的半導體 內之化學氣體或水分之除去， 面之酸的發生，將乾空氣或氮 收納容器內之塡充裝置及使用 面的靜電之靜電除去裝置。 室的半導體製造工程中，半導 加工製程也變得複雜。特別 工程中，蝕刻後殘留的鹵系氣 產生酸，由於該酸對半導體晶 ，作爲其對策，係採用：將加 圓收納容器後，以無水分的乾 阻止酸的發生，以防止半導體 潔淨室之半導體製造工程中， 收納容器內，而予以搬運、使 收納容器之收納時，或在半導 導體晶圓收納容器內的晶圓帶 電破壞，或基於靜電而使塵埃 作爲其對策，現狀係於前述半 入碳，使具有導電性，來抑制 -5- 200903689 晶圓所帶之靜電。 然後，關於以：不打開半導體晶圓收納容器的蓋子， 對該半導體晶圓收納容器內供給乾空氣或氮氣體，來除去 化學氣體，並且除去水分來阻止半導體晶圓表面的酸之發 生，以阻止半導體晶圓的腐蝕爲目的之乾空氣或氮氣體塡 充裝置；及以：對前述半導體收納容器內供給離子化乾空 氣或離子化氮氣體，來除去化學氣體，並且除去半導體晶 圓所帶之靜電，進而除去水分來阻止半導體晶圓表面的酸 之發生，以防止半導體晶圓的腐蝕爲目的之半導體晶圓收 納容器內晶圓靜電除去裝置，即使回溯檢索過去的專利文 獻，完全未揭示有此等乾空氣或氮氣體塡充裝置及靜電除 去裝置。 【發明內容】 如前述以往技術般，爲了防止由於鹵系氣體與水分的 反應之酸的發生、腐蝕，雖採取於半導體晶圓收納容器內 塡充水分極少之乾空氣或氮氣體的方法，但是爲了不使生 產性降低，要求在短時間內之塡充。另一方面，於將晶圓 收納於半導體晶圓收納容器內時，基於晶圓背面與機械臂 的接觸，雖僅發生少許粉塵，但是存在有：此粉塵容易被 帶入半導體晶圓收納容器內，而且，此等粉塵或其他原因 所導致之粉塵，有時會滯留在前述半導體晶圓收納容器的 底部之課題。 另外，在對半導體晶圓收納容器內塡充乾空氣或氮氣 -6 - 200903689 體之情形時，於初期階段中，半導體晶圓收納容器內的壓 力爲大氣壓，從半導體晶圓收納容器的吸氣口流入內部的 乾空氣或氮氣體，係以高速流入，內部的壓力一上昇時， 流入速度降低。而且，存在有：前述之初期的乾空氣或氮 氣體由於高速流入，半導體晶圓收納容器的底部或晶圓背 面之粉塵揚起，而附著於晶圓表面的半導體電路之課題。 進而，雖有嘗試藉由質量流量計等來控制對半導體晶 圓收納容器內的流入速度，但是，即使設置質量流量計， 也無法抑制開始流入之流速的湧浪（surge )，而且，質 量流量計極爲貴，存在有投資增大之課題。 另一方面，半導體的微細化向前邁進，製造工程之粉 塵的管理粒徑也成爲奈米等級，由於微弱靜電而產生電路 的破壞、粉塵之附著，即使是在前述半導體晶圓收納容器 的材料混入碳等之導電性物質的方法，也無法完全防止半 導體晶圓所帶的靜電，反之，碳的量一增加時，也成爲從 半導體晶圓收納容器之化學氣體的發生原因，關於半導體 晶圓所帶的靜電之問題，也存在有無法完全解決之課題。 另外，雖有半導體製造商，嘗試在將半導體晶圓收納 於半導體晶圓收納容器時，以打開半導體晶圓收納容器的 蓋子之狀態下，從開放口吹入離子空氣，之後將蓋子關閉 之方法等，但是存在有效果有限之課題。 本發明係爲了解決前述課題所完成者，弩底與持提 供：不打開半導體晶圓收納容器的蓋子，藉由對該半導體 晶圓收納容器內供給乾空氣或氮氣體，來除去化學氣體， -7- 200903689 並且除去水分來阻止半導體晶圓表面的酸之發生，以防止 半導體晶圓的腐蝕之乾空氣或氮氣體塡充裝置、及使用該 塡充裝置，藉由對前述半導體晶圓收納容器內供給離子化 乾空氣或離子化氮氣體，來阻止滯留在該半導體晶圓收納 容器內的底部之粉塵的揚起，並且除去半導體晶圓所帶的 靜電，進而除去水分來阻止半導體表面的酸之發生，以防 止半導體晶圓的腐蝕之靜電除去裝置。 爲了解決前述課題，申請專利範圍第1項所記載之發 明，係提供：一種半導體晶圓收納容器內之乾空氣或氮氣 體塡充裝置，其係在複數個設置於收納半導體晶圓之半導 體晶圓收納容器的底板之呼吸口中，連結固定於供給側之 呼吸口與排出側之呼吸口，來對半導體晶圓收納容器內塡 充乾空氣或氮氣體之塡充裝置，其特徵爲： 前述各呼吸口，係具備PTFE過濾器而形成， 前述塡充裝置，係藉由：對前述半導體晶圓收納容器 內供給乾空氣或氮氣體之乾空氣、氮氣體供給部；及將藉 由供給至前述半導體晶圓收納容器內之乾空氣或氮氣體， 來除去前述半導體晶圓收納容器內的化學氣體，並且除去 水分來阻止半導體晶圓表面之酸的發生後之使用完畢乾空 氣或氮氣體予以排出之使用完畢乾空氣、氮氣體排出部所 構成， 前述乾空氣、氮氣體供給部，係被連結於具備有供給 噴嘴之供給側的中空容器，並且該中空容器的供給噴嘴， 係被緊密地連結固定於前述供給側的呼吸口而形成， -8- 200903689 前述使用完畢乾空氣、氮氣體排出部，係於具備有排 出噴嘴之排出側的中空容器開有將前述使用完畢乾空氣或 氮氣體予以排出之排出口，並且該中空容器的排出噴嘴， 係被緊密地連結固定於前述排出側之呼吸口而形成， 被供給至前述供給側之中空容器內的乾空氣或氮氣 體，係藉由前述PTFE過濾器，塵埃被除去，且作爲乾空 氣流或氮氣體流而流入前述半導體晶圓收納容器內，將半 導體晶圓收納容器內的化學氣體除去，並且除去水分來阻 止半導體晶圓表面之酸的發生，另一方面， 介由排出側之呼吸口的PTFE過濾器，將除去前述半 導體晶圓收納容器內的化學氣體，並且除去水分來阻止半 導體晶圓表面之酸的發生後之使用完畢乾空氣或氮氣體排 出至排出側的中空容器，進而從排出口排出外部。 申請專利範圍第2項所記載之發明，係提供：針對前 述申請專利範圍第1項所記載之半導體晶圓收納容器內之 乾空氣或氮氣體塡充裝置，其中，於乾空氣、氮氣體供給 部之乾空氣、氮氣體供給路徑設置有緩衝儲氣桶。 申請專利範圍第3項所記載之發明，係提供：如申請 專利範圍第2項所記載之半導體晶圓收納容器內之乾空氣 或氮氣體塡充裝置，其中，緩衝儲氣桶係只具備中空室而 形成。 申請專利範圍第4項所記載之發明，係提供：如申請 專利範圍第2項所記載之半導體晶圓收納容器內之乾空氣 或氮氣體塡充裝置，其中緩衝儲氣桶，係於中空室設置有 -9- 200903689 1個或具有間隔之複數個過濾器。 申請專利範圍第5項所記載之發明，係提供： 專利範圍第2項所記載之半導體晶圓收納容器內之 或氮氣體塡充裝置，其中緩衝儲氣桶，係於中空室 1個或具有間隔之複數個多孔板。 申請專利範圍第6項所記載之發明，爲提供： 用半導體晶圓收納容器內之乾空氣或氮氣體塡充裝 電除去裝置，係使用在複數個設置於收納半導體晶 導體晶圓收納容器的底板之呼吸口中，連結固定於 之呼吸口與排出側之呼吸口，來對半導體晶圓收納 塡充乾空氣或氮氣體之塡充裝置之靜電除去裝置， 爲： 前述各呼吸口，係具備PTFE過瀘器而形成， 前述靜電除去裝置，係藉由：對前述半導體晶 容器內供給離子化乾空氣或離子化氮氣體之離子 氣、離子化氮氣體供給部；及將藉由供給至前述半 圓收納容器內之離子化乾空氣或離子化氮氣體，來 述半導體晶圓收納容器內的化學氣體，並且除去靜 而除去水分來阻止半導體晶圓表面之酸的發生後之 畢離子化乾空氣或離子化氮氣體予以排出之使用完 化乾空氣、離子化氮氣體排出部所構成， 前述離子化乾空氣、離子化氮氣體供給部，係 有供給噴嘴之供給側的中空容器連結將乾空氣或氮 子化之離子產生部，並且該中空容器的供給噴嘴， 如申請 乾空氣 設置有 一種使 置之靜 圓之半 供給側 容器內 其特徵 圓收納 化乾空 導體晶 除去前 電，進 使用完 畢離子 於具備 氣體離 係被緊 -10- 200903689 密地連結固定於前述供給側的呼吸口而形成， 前述使用完畢離子化乾空氣、離子化氮氣體排出部， 係於具備有排出噴嘴之排出側的中空容器開有將前述使用 完畢離子化乾空氣或離子化氮氣體予以排出之排出口，並 且該中空容器的排出噴嘴，係被緊密地連結固定於前述排 出側之呼吸口而形成， 被供給至前述供給側之中空容器內的乾空氣或氮氣 體，係被離子化而成爲離子化乾空氣或離子化氮氣體，並 且藉由前述PTFE過濾器，抑制離子之喪失，塵埃被除 去，且作爲離子化乾空氣流或離子化氮氣體流而流入前述 半導體晶圓收納容器內，將半導體晶圓收納容器內的化學 氣體除去，並且除去靜電，進而除去水分，且阻止半導體 晶圓表面之酸的發生，另一方面， 除去前述半導體晶圓收納容器內之化學氣體，並且， 除去靜電，進而，將除去水分，且阻止半導體晶圓表面之 酸的發生後之使用完畢離子化乾空氣或離子化氮氣體介由 排出側之呼吸口的PTFE過濾器排出至排出側的中空容 器，進而從排出口排出外部。 申請專利範圍第7項所記載之發明，係提供：針對申 請專利範圍第6項所記載之使用半導體晶圓收納容器內之 乾空氣或氮氣體塡充裝置之靜電除去裝置，其中，於離子 化乾空氣、離子化氮氣體供給部之乾空氣、氮氣體供給路 徑設置有緩衝儲氣桶。 申請專利範圍第8項所記載之發明，係提供：如申請 -11 - 200903689 專利範圍第7項所記載之使用半導體晶圓收納容器內之乾 空氣或氮氣體塡充裝置之靜電除去裝置，其中緩衝儲氣 桶’係只具備中空室而形成。 申請專利範圍第9項所記載之發明，係提供··如申請 專利範圍第7項所記載之使用半導體晶圓收納容器內之乾 空氣或氮氣體塡充裝置之靜電除去裝置，其中緩衝儲氣 桶’係於中空室設置有1個或具有間隔之複數個過濾器。 申請專利範圍第1 0項所記載之發明，係提供：如申 請專利範圍第7項所記載之使用半導體晶圓收納容器內之 乾空氣或氮氣體塡充裝置之靜電除去裝置，其中緩衝儲氣 桶，係於中空室設置有1個或具有間隔之複數個多孔板。 如依據申請專利範圍第1項所記載之發明，不用打開 半導體晶圓收納容器的蓋子，藉由通過設置於供給側之呼 吸口的PTFE過濾器，來對該半導體晶圓收納容器內供給 乾空氣或氮氣體，得以除去化學氣體，並且，除去水分來 阻止半導體晶圓表面的酸之發生，能夠防止該半導體晶圓 的腐蝕。 如依據申請專利範圍第2〜5項所記載之發明，在藉 由供給噴嘴對半導體晶圓收納容器內供給乾空氣或氮氣體 之情形時，直到半導體晶圓收納容器內的壓力上升爲止， 初期的流入速度快’雖隨著壓力上升而變慢’但是藉由設 置有緩衝儲氣桶’乾空氣或氮氣體的流速被均勻化’流入 供給側之中空容器，作爲乾空氣流或氮氣體流而急遽供給 至半導體晶圓收納容器內的情形可被防止’不會將滯留在 -12 - 200903689 該半導體晶圓收納容器內的底部之粉塵吹起。另外，如依 據申請專利範圍第4項所記載之發明，與申請專利範圍第 3項所記載之發明相比，不單可謀求大幅度之流速的均勻 化，藉由緩衝儲氣桶，設置於上游側之開關閥所發生的粉 塵可以除去。進而如依據申請專利範圍第5項所記載之發 明，與申請專利範圍第3項所記載之發明相比，可以謀求 大幅度之流速的均勻化。 如依據申請專利範圍第6項所記載之發明，不用打開 半導體晶圓收納容器的蓋子，藉由通過設置於供給側之呼 吸口的PTFE過濾器，來對該半導體晶圓收納容器內供給 粉塵被除去，但離子沒有喪失之離子化乾空氣或離子化氮 氣體，藉由該離子化乾空氣或離子化氮氣體，來除去前述 半導體晶圓收納容器內的化學氣體，並且，除去水分來阻 止半導體晶圓表面的酸之發生，能夠防止該半導體晶圓的 腐蝕，進而，可以進行半導體晶圓所帶之靜電的除去。 如依據申請專利範圍第7〜1 0項所記載之發明，在藉 由供給噴嘴對半導體晶圚收納容器內供給離子化乾空氣或 離子化氮氣體之情形時’直到半導體晶圓收納容器內的壓 力上升爲止，初期的流入速度快，雖隨著壓力上升而變 慢，但是藉由設置有緩衝儲氣桶，乾空氣或氮氣體的流速 被均勻化，流入供給側之中空容器，作爲離子化乾空氣流 或離子化氮氣體流而急遽供給至半導體晶圓收納容器內的 情形可被防止，不會將滯留在該半導體晶圓收納容器內的 底部之粉塵吹起。另外，如依據申請專利範圍第9項所記 -13- 200903689 載之發明’與申請專利範圍第8項所記載之發明相比，不 單可謀求大幅度之流速的均勻化，藉由緩衝儲氣桶，設置 於上游側之開關閥所發生的粉塵可以除去。 進而如依據申請專利範圍第1 〇項所記載之發明，與 申請專利範圍第8項所記載之發明相比，可以謀求大幅度 之流速的均勻化。 【實施方式】 本發明係一種不用打開半導體晶圓收納容器的蓋子， 藉由對該半導體晶圓收納容器內供給乾空氣或氮氣體，來 除去化學氣體，並且’除去水分來阻止半導體晶圓表面的 酸之發生’以防止該半導體晶圓的腐蝕之乾空氣或氮氣體 塡充裝置；及以使用該塡充裝置，對前述半導體晶圓收納 谷器內供給離子化乾空氣或離子化氮氣體，來除去化學氣 體’並且除去半導體晶圓所帶之靜電，進而除去水分，阻 止半導體晶圓表面之酸的發生，以防止半導體晶圓之腐蝕 爲目的之靜電除去裝置，以乾空氣或氮氣體塡充裝置爲實 施例1’另外以使用該塡充裝置之靜電除去裝置爲實施例 2，於以下做說明。 實施例1 依據圖面詳細說明本發明之實施例〗中之乾空氣或氮 氣體塡充裝置。第1圖係本發明所使用之半導體晶圓收納 谷器的縱剖面圖’桌2圖係其底面圖。如第1、2圖所示 -14- 200903689 般，於半導體晶圓收納容器1中，於前面安裝有具備蓋用 凸緣2之可以開關的蓋子3，並且，於上部安裝有將半導 體晶圓收內容器1吊起之吊起用鉤4，進而，於底板5設 置有：載置於未圖示出之載置台等之腳6;及具備有 PTFE過濾器7之複數個呼吸口 8。 於前述半導體晶圓收納容器1內收納有半導體晶圓 9，並且該半導體晶圓9係在製程裝置（未圖示出）中被 加工以外，被收納於該半導體晶圓收納容器1內，來防止 於前述半導體晶圓9的表面附著化學氣體。 第3圖係半導體晶圓收納容器內之乾空氣或氮氣體塡 充裝置的平面圖，第4圖係表示將該塡充裝置安裝於半導 體晶圓收納容器之狀態的縱剖面圖。如第3、4圖所示 般，於半導體晶圓收納容器1內除去化學氣體，並且，除 去水分來阻止半導體晶圓表面之酸的發生，以防止晶圓的 腐蝕之乾空氣或氮氣體塡充裝置A，係藉由：對半導體晶 圓收納容器1內供給乾空氣或氮氣體之乾空氣、氮氣體供 給部1 1 ;及將藉由供給至前述半導體晶圓收納容器1內 之乾空氣或氮氣體，來除去半導體晶圓收納容器1內的化 學氣體’並且除去水分’以阻止半導體晶圓表面之酸的發 生後之乾空氣或氮氣體排出之使用完畢乾空氣、氮氣體排 出部12所構成。而且，前述乾空氣、氮氣體供給部11係 與具備有供給噴嘴1 3之供給側的中空容器丨4連結。 前述供給側之中空容器1 4 ’係以能夠緊密地連結固 定於設置在半導體晶圓收納容器1的底板5之一側的呼吸 200903689 口 8a的PTFE過濾器7之上游側的開口部1 5之方式，供 給噴嘴1 3的前方側形成爲略圓錐狀，並且，供給乾空氣 或氮氣體之乾空氣、氮氣體供給管1 6的下游側與該中空 容器1 4的周壁連通開口，且於該乾空氣、氮氣體供給管 1 6的上游側之乾空氣、氮氣體供給口 1 7附近安裝有開關 閥1 8，藉由調整該開關閥1 8，來進行前述乾空氣或氮氣 體之流量調整、及送氣之停止及開始之控制。 進而，於前述開關閥1 8與中空容器1 4間之乾空氣、 氮氣體供給管1 6設置有緩衝儲氣桶1 9，從未圖示出之乾 空氣或氮氣體供給裝置經過乾空氣、氮氣體供給口 1 7而 被供給至乾空氣、氮氣體供給管16的乾空氣或氮氣體 24，藉由被導入前述緩衝儲氣桶19，該乾空氣或氮氣體 24之流速被均句化，並被導入前述中空容器14內。 即緩衝儲氣桶1 9係有：如第5圖所示般，只具有中 空室21之形式，如第6圖所示般，在中空室21內設置1 個或具有間隔之複數個過濾器22，及如第7圖所示般， 於中空室21內設置1個或具有間隔之複數個多孔板23之 形式。 如第6、7圖所示般，乾空氣或氮氣體24 —通過設置 於前述緩衝儲氣桶1 9的中空室2 1內之過瀘器22或多孔 板23時，與第5圖之沒有過濾器的形式相比，與流速成 比例，壓力損失變大。利用此等過濾器22及多孔板23的 特性、以及緩衝儲氣桶1 9的特性，抑制從本發明之乾空 氣或氮氣體塡充裝置A對半導體晶圓收納容器1內之乾 -16- 200903689 空氣或氮氣體24的初期流入速度’可以防止前述半導體 晶圓收納容器1內之底部所有的粉塵之揚起。 另外，如使用前述第5圖所示之沒有過濾器形式的緩 衝儲氣桶19時’與弟6、7圖所不之緩衝儲氣桶19相 比，針對初期之流入速度的抑制及粉塵之揚起防止，雖多 少差些，但是在本發明中，也可以採用第5圖所示之緩衝 儲氣桶1 9。 被供給至前述中空容器14內的乾空氣或氮氣體24, 係藉由供給側之呼吸口 8a的PTFE過濾器7來除去粉 塵，成爲乾空氣流或氮氣體流25流入半導體晶圓收納容 器1內且混亂流動，除去該半導體晶圓收納容器1內中之 化學氣體，並且除去水分而阻止半導體晶圓表面之酸的發 生。 另一方面，前述使用完畢乾空氣、氮氣體排出部12 係於具備有排出噴嘴26的排出側之中空容器27的周壁， 開有：將於前述半導體晶圓收納容器1內，除去化學氣 體，並且除去水分，而阻止了半導體晶圓之酸的發生後之 使用完畢乾空氣或氮氣體28予以排出之排出口 29，並且 前述排出噴嘴26的前端側形成爲略圓錐狀，以使得能緊 密地連結固定於設置在前述半導體晶圓收納容器1的底板 5之排出側的呼吸口 8 b的P T F E過濾器7的下游側之開口 部30。 於前述半導體晶圓收納容器1內，除去化學氣體，並 且除去水分而阻止半導體晶圓表面之酸的發生後的使用完 -17- 200903689 畢乾空氣或氮氣體2 8 ’係經過排出側的呼吸口 8 b之 PTFE過濾器7及排出噴嘴26而流入中空容器27內，之 後，從排出口 29而被排出外部。 說明依據前述構成之本發明的實施例1中之乾空氣或 氮氣體塡充裝置A的作用。於具備有設置於收納半導體 晶圓9的半導體晶圓收納容器1之底板$的pTFE過濾器 7之供給側的呼吸口 8 a，緊密地連結固定構成前述塡充裝 置A的乾空氣、氮氣供給部丨1側之中空容器1 *的供給 噴嘴1 3 ’並且於另一方側之呼吸口 8 b緊密地連結固定構 成塡充裝置A之使用完畢乾空氣、氮氣體排出部ι2側的 中空容器27之排出噴嘴26。 於即述半導體晶圓收納容器1裝置完前述塡充裝置A 後’從未圖示出之乾空氣、氮氣體供給裝置介由乾空氣、 氮氣體供給管1 6而對乾空氣、氮氣供給部1 1側之中空容 益14供給乾空氣或氮氣體24時，被導入該中空容器14 內的乾空氣或氮氣體24，係藉由通過供給側之呼吸口 8a 的 FE過據器7 ’除去該乾空氣或氮氣體24中的粉塵， 成爲乾空氣或氮氣體流25而流入半導體晶圓收納容器1 內並混亂流動’除去半導體晶圓收納容器1內之化學氣 體’並且除去水分’阻止半導體晶圓表面之酸的發生，可 以阻止則述半導體晶圓9的腐蝕。 妖榜' ，降+ A 除去前述半導體晶圓收納容器1內的化學氣 體’並且除丰| /Λ 水分而阻止半導體晶圓表面之酸的發生後之 使用完畢氮翁腆。 _ Μ取體2 8 ’係經過排出側之呼吸口 8 b的P T F Ε -18- 200903689 過濾器7及排出噴嘴26，流入中空容器27內，之後，從 排出口 29而被排出外部。 實施例2 將使用藉由前述構成所形成的乾空氣或氮氣體塡充裝 置當成本發明之實施例2，依據圖面詳細做說明。 第8圖係使用本發明乾空氣或氮氣體塡充裝置之靜電 除去裝置的平面圖，第9圖係表示將該靜電除去裝置安裝 於第1、2圖所示之半導體晶圓收納容器的狀態之縱剖面 圖。如第8、9圖所示般，除去半導體晶圓收納容器1內 的半導體晶圓9所帶之靜電的靜電除去裝置B，係將前述 乾空氣或氮氣體塡充裝置A中之供給乾空氣或氮氣體之 乾空取、氮氣供給部11當成離子化乾空氣、離子化氣氣 體供給部11a使用，並且，將該塡充裝置A中之使用完畢 乾空氣、氮氣體排出部12當成：藉由供給至前述半導體 晶圓收納容器1內之離子化乾空氣或離子化氮氣體，除去 該半導體晶圓收納容器1內中之化學氣體，並且除去水 分’阻止半導體晶圓表面之酸的發生，進而除去半導體晶 圓9的表面之靜電後的使用完畢離子化乾空氣或離子化氮 氣體排出部12a使用，另一方面，進而於具備有構成前述 塡充裝置A之供給噴嘴1 3的供給側之中空容器1 4，連結 將乾空氣或氮氣體24予以離子化之離子發生部31而形 成。其他構成係與前述塡充裝置A相同構成，使用同一 符號來說明。 -19- 200903689 前述供給側之中空容器1 4，爲了能緊密地連結固定 於設置在半導體晶圓收納容器1的底板5之供給側的呼吸 口 8a的PTFE過濾器7之上游側的開口部15，供給噴嘴 1 3的前方側形成爲略圓錐狀，並且，供給乾空氣或氮氣 體24之乾空氣' 氮氣體供給管16的下游側與該中空容器 14的周壁連通而開口，且於該乾空氣、氮氣體供給管16 的上游側之乾空氣、氮氣體供給口 1 7附近安裝有開關閥 1 8，藉由調整該開關閥1 8，來進行前述乾空氣或氮氣體 之流量調整與送氣的停止及開始之控制。 進而，於前述開關閥18與中空容器14間之乾空氣、 氮氣體供給管1 6設置有緩衝儲氣桶1 9，從未圖示出之乾 空氣或氮氣體供給裝置經過乾空氣、氮氣體供給口 1 7而 被供給至乾空氣、氮氣體供給管1 6的乾空氣或氮氣體 24，藉由被導入前述緩衝儲氣桶19，該乾空氣或氮氣體 24之流速被均勻化，而被導入前述中空容器14內。 即緩衝儲氣桶1 9係有：如第5圖所示般，只具有中 空室21之形式，如第6圖所示般，在中空室21內設置1 個或具有間隔之複數個過濾器22，及如第7圖所示般， 於中空室21內設置1個或具有間隔之複數個多孔板23之 形式。 如第6、7圖所示般，乾空氣或氮氣體24 —通過設置 於前述緩衝儲氣桶19的中空室21內之過濾器22或多孔 板2 3時，與第5圖之沒有過濾器的形式相比，與流速成 比例’壓力損失變大。利用此等過濾器22及多孔板23的 -20- 200903689 特性、以及緩衝儲氣桶1 9的特性，抑制從本發明之靜電 除去裝置B對半導體晶圓收納容器1內之乾空氣或氮氣體 2 4的初期流入速度，可以防止前述半導體晶圓收納容器1 內之底部所有的粉塵之揚起。 另外，如使用前述第5圖所示之沒有過爐器形式的緩 衝儲氣桶19時，與第6、7圖所示之緩衝儲氣桶1 9相 比，針對初期之流入速度的抑制及粉塵之揚起防止，雖多 少差些，但是在本發明中，也可以採用第5圖所示之緩衝 儲氣桶1 9。 另外，於第1 0圖表示於將供給至前述中空容器1 4之 乾空氣或氮氣體24予以離子化之離子發生部3 1，例如使 用軟X射線管之離子化乾空氣、離子化氮氣體供給部 11a。爲了阻止介由窗101而從軟X射線管（離子發生部 3 1 )照射於中空容器1 4之軟X射線1 0 3的直進性，於與 中空容器1 4的供給噴嘴1 3之間具備形成間隙1 04之軟X 射線遮蔽片102。通過乾空氣、氮氣體供給管16所被供 給之乾空氣或氮氣體24，係在中空容器14內介由窗101 被照射軟X射線103而被離子化，成爲+離子與-離子 3 2，通過中空容器14的供給噴嘴13與軟X射線遮蔽片 1 02之間隙1 04，從供給噴嘴1 3而作爲離子化乾空氣或離 子化氮氣體33而被噴出前述半導體晶圓收納容器1內。 被供給至前述中空容器14內的乾空氣或氮氣體24， 係藉由離子32而被離子化，並成爲離子化乾空氣或離子 化氮氣體33，藉由供給側之呼吸口 8a的PTFE過濾器7 -21 - 200903689 除去粉塵，成爲離子化乾空氣流或離子化氮氣體流34流 入半導體晶圓收納容器1內並混亂流動，在該半導體晶圓 收納容器1內，除去化學氣體，並且除去半導體晶圓9所 帶之靜電，進而，除去水分而阻止半導體晶圓表面之酸的 發生。藉由使用前述PTFE過濾器7，抑制離子之喪失， 進而除去粉塵’成爲離子化乾空氣流或離子化氮氣體流 34而流入半導體晶圓收納容器1內。 另一方面’使用完畢離子化乾空氣或離子化氮氣體排 出部1 2 a係於具備排出噴嘴2 6之排出側的中空容器2 7的 周壁’開有將：在前述半導體晶圓收納容器i內，除去化 學氣體’並且除去所帶之靜電，進而除去水分，阻止半導 體晶圓表面之酸的發生後之使用完畢離子化乾空氣或離子 化氮氣體35予以排出之排出口 29，並且，前述排出噴嘴 26的前方側形成爲略圓錐狀，以使得能夠緊密地連結固 定於設置於前述半導體晶圓收納容器1的底板5之排出側 的呼吸口 8b之PTFE過濾器7的上游側之開口部30。 在前述半導體晶圓收納容器1內，除去化學氣體，並 且除去所帶之靜電，進而除去水分，阻止半導體晶圓表面 之酸的發生後之使用完畢離子化乾空氣或離子化氮氣體 35，係經過排出側之呼吸口 8b的PTFE過濾器7及排出 噴嘴26而流入中空容器27內，之後，藉由排出口 29而 被排出外部。另外，於前述各呼吸口 8中，雖然在供給側 及排出側之任何一側都具備P T F E過濾器7 ’此係作成任 何一個呼吸口 8都可以當成供給側及排出側使用的關係。 -22- 200903689 說明藉由前述構成所形成之本發明的實施例2中之靜 電除去裝置B的作用。於具備有設置於收納半導體晶圓9 的半導體晶圓收納容器1之底板5的P TFE過濾器7之供 給側的呼吸口 8a，緊密地連結固定構成前述靜電除去裝 置B的離子化乾空氣、離子化氮氣體供給部11a側之中空 容器1 4的供給噴嘴1 3，並且於排出側之呼吸口 8b緊密 地連結固定構成靜電除去裝置B之使用完畢離子化乾空 氣、離子化氮氣體排出部12a側的中空容器27之排出噴 嘴26。 於前述半導體晶圓收納容器1裝置靜電除去裝置B 後，將從未圖示出之乾空氣供給裝置來之乾空氣或氮氣體 介由乾空氣、氮氣體供給管16而供給至離子化乾空氣、 離子化氮氣體供給部1 1 a側之中空容器14，並且，藉由 離子發生部31 —供給使前述中空容器14內的乾空氣離子 化之例如軟X射線時，該中空容器14內的乾空氣或氮氣 體被離子化，而成爲離子化乾空氣或離子化氮氣體33， 藉由通過供給側之呼吸口 8 a的PTFE過濾器7，抑制離子 之喪失，並且，除去該離子化乾空氣或離子化氮氣體33 中的粉塵，成爲離子化乾空氣流或離子化氮氣體流34， 流入半導體晶圓收納容器1內而混亂流動，除去化學氣 體，並且除去半導體晶圓9所帶之靜電，進而藉由水分之 除去，阻止半導體晶圓表面之酸的發生。 然後，除去前述半導體晶圓收納容器1內的化學氣 體’並且除去半導體晶圓9所帶之靜電，進而藉由除去水 -23- 200903689 分，阻止半導體表面之酸的發生後之使用完畢離子化乾空 氣或離子化氮氣體 3 5，係經過排出側之呼吸口 8 b的 PTFE過濾器7及排出噴嘴26，流入中空容器27內，之 後，從排出口 2 9被排出外部。 進而，如前述般，爲了防止對半導體晶圓收納容器1 的底板5之粉塵的侵入，及抑制離子之喪失，設置有 PTFE過濾器7。前述PTFE過濾器7係與以玻璃纖維爲素 材之玻璃纖維過濾器不同，而是將聚四酚乙烯薄膜予以延 伸之極小的多孔質過濾器，且是作爲過濾器使用者。並 且，即使將前述玻璃纖維過濾器使用於本發明，離子化乾 空氣或離子化氮氣體，藉由該玻璃纖維過濾器，離子喪 失，本發明無法加以採用。 另一方面，在本發明所使用的PTFE過濾器7，可以 某種程度地抑制離子之喪失，並且將離子化乾空氣或離子 化氮氣體24導入半導體晶圓收納容器1內。使用第11圖 所示之裝置來進行其測試。 即測試方法係藉由離子發生裝置來使發生離子’個別 藉由除電時間測定器來測定無過濾器之情形的除電時間、 PTFE過濾器通過後之除電時間、及玻璃纖維過濾器通過 後之除電時間。 測定結果則如下述。 對離子發生裝置之供給空氣壓力：0.5MPa U)無過濾器時 〇 .4秒（+帶電之除電時間値） -24- 200903689 〇. 5秒（—帶電之除電時間値） (2 ) PTFE過濾器通過後 1 · 9秒（+帶電之除電時間値） 4 · 7秒（一帶電之除電時間値） (3 )玻璃纖維過濾器通過後 00秒（+帶電之除電時間値） 00秒（—帶電之除電時間値） 由前述測定結果，如（1 )般，在沒有過濾器之障礙 物之情形時，當然藉由離子化乾空氣，短時間可被除電， 但節使如（2 )般，在有PTFE過濾器之障礙物時，雖某 種程度除電率變差，但是可以驗證能夠除電。另外，如 (3 )般，如有玻璃纖維過濾器之障礙物時，驗證完全無 法除電。即可以證明玻璃纖維過濾器使離子化乾空氣或離 子化氮氣體的離子完全喪失。而且，依據前述驗證， PTFE過濾器可以某種程度地抑制離子化乾空氣或離子化 氮氣體24的離子之喪失，知道可以導入半導體晶圓收納 容器1內。 另外，如前述般，在將離子化乾空氣或離子化氮氣體 33供給至半導體晶圓收納容器丨內之情形時，供給開始 時’半導體晶圓收納容器1內的壓力低，離子化乾空氣或 離子化氮氣體3 3之對前述半導體晶圓收納容器1內的侵 入風速快，會揚起滯留在該半導體晶圓收納容器1的底部 之粉塵’而有附著於半導體晶圓9的表面。另外，離子化 乾空氣或離子化氮氣體33之對半導體晶圓收納容器1內 -25- 200903689 的供給時間一經過時，該半導體晶圓收納容器1內的壓力 上昇，該離子化乾空氣或離子化氮氣體33之對前述半導 體晶圓收納容器1的侵入風速變慢，不會引起粉塵之揚 起。 由前述觀點而言，本發明係於靜電除去裝置B的乾空 氣或氮氣體24之供給路徑的閥門20與中空容器1 4間之 乾空氣、氮氣體供給管1 8設置緩衝儲氣桶2 1，使流入前 述中空容器1 4之乾空氣或氮氣體24的流速均勻化。防 止：此被均勻化之乾空氣或氮氣體24，以使流速均句化 後流入中空容器14內而被離子化，成爲離子化乾空氣或 離子化氮氣體33，作爲離子化乾空氣流或離子化氮氣體 流3 4而急遽地被供給至半導體晶圓收納容器1內，來防 止將滯留在該半導體晶圓收納容器1內的底部之粉塵揚 起。前述緩衝儲氣桶1 9之第5〜7圖所示之作用，係與前 述完全相同，省略其說明。 【圖式簡單說明】 第1圖係本發明半導體晶圓收納容器內之乾空氣或氮 氣體塡充裝置所使用之半導體晶圓收納容器的縱剖面圖。 第2圖係其底面圖。 第3圖係本發明半導體晶圓收納容器內之乾空氣或氮 氣體塡充裝置的平面圖。 第4圖係將本發明半導體晶圓收納容器內之乾空氣或 氮氣體塡充裝置安裝於半導體晶圓收納容器之縱剖面圖。 -26- 200903689 第5圖係本發明半導體晶圓收納容器內之乾空氣或氮 氣體塡充裝置所使用之緩衝儲氣桶的一部份切開斜視圖。 第6圖係表示本發明半導體晶圓收納容器內之乾空氣 或氮氣體塡充裝置所使用之緩衝儲氣桶的其他實施例之一 部份切開斜視圖。 第7圖係表示本發明半導體晶圓收納容器內之乾空氣 或氮氣體塡充裝置所使用之緩衝儲氣桶的進一步其他實施 例之一部份切開斜視圖。 第8圖係使用本發明半導體晶圓收納容器內之乾空氣 或氮氣體塡充裝置之靜電除去裝置的平面圖。 第9圖係將使用本發明半導體晶圓收納容器內之乾空 氣或氮氣體塡充裝置之靜電除去裝置安裝於半導體晶圓收 納容器之半導體晶圓收納容器的縱剖面圖。 第1 〇圖係表示於使用本發明半導體晶圓收納容器內 之乾空氣或氮氣體塡充裝置之靜電除去裝置中之離子化乾 空氣、離子化氮氣體供給部使用軟X射線管之例子的重 要部位之縱剖面圖。 第1 1圖係在本發明中，針對過瀘器之離子喪失測試 裝置之槪略說明圖。 【主要元件符號說明】 1 :半導體晶圓收納容器 2 :蓋用凸緣 3 :蓋子 -27- 200903689 4 :吊起用夠 5 :底板 6 :腳 7 : PTFE過濾器 8 :呼吸口 9 =半導體晶圓 1 1 :乾空氣、氮氣體供給部 12:使用完畢乾空氣、氮氣體排出部 1 3 :供給噴嘴 14 :中空容器 1 5 :開口部 1 6 :乾空氣、氮氣體供給閥 1 7 :乾空氣、氮氣體供給口 1 8 :開關閥 1 9 =緩衝儲氣桶 2 1 :中空室 22 過濾器 2 3 :多孔板 24 :乾空氣或氮氣體 2 5 :乾空氣流或氮氣體流 26 :排出噴嘴 27 :中空容器 28:使用完畢乾空氣或氮氣體 29 :排出口 -28-200903689 IX. [Technical Field] The present invention is directed to preventing a semiconductor wafer table from being filled with a semiconductor wafer in a semiconductor wafer by a semiconductor device housing a wafer. Technology] In the past, Moving forward in the miniaturization of micro-environment clean body wafers, Yes, In the rounded corrosion by the reaction of the halogen-based gas with the moisture in the dry air, And it becomes a big problem. The wafer after work is stored in semiconductor crystal air or nitrogen gas to be replaced. The method of etching the wafer. In addition, In the micro-environment type, although the wafer is stored in the semiconductor wafer, it stands by. However, in the handling of semiconductor wafer wafer storage containers, Semi-electric, And the problem that the semiconductor circuit is statically attached to the surface of the wafer, etc. The material of the conductor wafer storage container is mixed with the removal of chemical gas or moisture in the semiconductor used in semiconductor manufacturing. The occurrence of acid, The static air or nitrogen storage device in the container and the static electricity static elimination device on the surface. In the semiconductor manufacturing engineering of the room, Semi-conducting machining processes have also become complicated. Special project, The halogen-based gas remaining after the etching generates acid, Due to the acid to the semiconductor crystal, As a countermeasure, The system uses: After adding the storage container, Prevent the occurrence of acid by drying without moisture, In order to prevent semiconductor clean room semiconductor manufacturing projects, In the storage container, And carry it, When storing the storage container, Or the wafer is electrically damaged in the semiconductor wafer storage container, Or use dust as a countermeasure based on static electricity. The current situation is based on the aforementioned semi-intake carbon, Make it conductive, To suppress static electricity from the -5- 200903689 wafer. then, About to: Do not open the lid of the semiconductor wafer storage container, Supplying dry air or nitrogen gas into the semiconductor wafer storage container, To remove chemical gases, And removing moisture to prevent acid on the surface of the semiconductor wafer, a dry air or nitrogen gas charging device for the purpose of preventing corrosion of a semiconductor wafer; And to: Supplying ionized dry air or ionized nitrogen gas into the semiconductor storage container, To remove chemical gases, And removing the static electricity carried by the semiconductor crystal, Further removing moisture to prevent acid on the surface of the semiconductor wafer, A semiconductor wafer receiving container in the container for preventing corrosion of a semiconductor wafer, the wafer static removing device, Even if you backtrack through the past patent documents, Such dry air or nitrogen gas charging devices and static electricity removing devices are not disclosed at all. SUMMARY OF THE INVENTION As in the prior art described above, In order to prevent the occurrence of acid due to the reaction of the halogen gas with moisture, corrosion, Although it is a method of filling dry air or nitrogen gas in a semiconductor wafer storage container with little water, But in order not to reduce productivity, Requires a short period of time. on the other hand, When the wafer is housed in a semiconductor wafer storage container, Based on the contact between the back side of the wafer and the robot arm, Although only a little dust, But there are: This dust is easily carried into the semiconductor wafer storage container. and, Dust caused by such dust or other causes, There is a problem that it may stay in the bottom of the semiconductor wafer storage container. In addition, When the semiconductor wafer storage container is filled with dry air or nitrogen gas - 200903689, In the early stages, The pressure in the semiconductor wafer storage container is atmospheric pressure. Flowing into the internal dry air or nitrogen gas from the suction port of the semiconductor wafer storage container, Flowing at high speed, When the internal pressure rises, The inflow speed is reduced. and, There are: In the early stage of the above, dry air or nitrogen gas flows in due to high speed. The bottom of the semiconductor wafer storage container or the dust on the back side of the wafer is raised, The problem of semiconductor circuits attached to the surface of the wafer. and then, Although attempts have been made to control the flow rate into the semiconductor wafer container by a mass flow meter or the like, but, Even if you set up a mass flow meter, It is also impossible to suppress the surge of the flow rate that starts to flow in, and, The mass flow meter is extremely expensive. There is a problem of increased investment. on the other hand, The miniaturization of semiconductors is moving forward, The management particle size of the dust of the manufacturing process also becomes the nanometer grade. Damage to the circuit due to weak static electricity, Adhesion of dust, Even in the method of mixing a conductive material such as carbon into the material of the semiconductor wafer storage container, It is also impossible to completely prevent static electricity from being charged on a semiconductor wafer. on the contrary, As the amount of carbon increases, It also becomes a cause of chemical gas from a semiconductor wafer storage container. Regarding the problem of static electricity in semiconductor wafers, There are also problems that cannot be completely solved. In addition, Although there are semiconductor manufacturers, When attempting to store a semiconductor wafer in a semiconductor wafer storage container, In a state in which the lid of the semiconductor wafer storage container is opened, Injecting ionic air from the open mouth, Then the method of closing the lid, etc. However, there are problems with limited effects. The present invention has been made to solve the aforementioned problems, Bottom and support: Do not open the lid of the semiconductor wafer storage container, By supplying dry air or a nitrogen gas to the semiconductor wafer storage container, To remove chemical gases, -7- 200903689 and remove moisture to prevent acid on the surface of the semiconductor wafer, a dry air or nitrogen gas charging device to prevent corrosion of semiconductor wafers, And using the charging device, By supplying ionized dry air or ionized nitrogen gas to the inside of the semiconductor wafer storage container, To prevent the dust from rising at the bottom of the semiconductor wafer container, And removing the static electricity carried by the semiconductor wafer, Further removing moisture to prevent acid on the surface of the semiconductor, A static electricity removing device for preventing corrosion of a semiconductor wafer. In order to solve the aforementioned problems, Applying for the invention described in item 1 of the patent scope, Department provides: a dry air or nitrogen gas charging device in a semiconductor wafer storage container, It is in a plurality of breathing ports provided on the bottom plate of the semiconductor wafer storage container in which the semiconductor wafer is housed. Connecting the breathing port fixed to the breathing side and the discharging side of the supply side, A charging device for charging a dry air or a nitrogen gas in a semiconductor wafer storage container, Its characteristics are: Each of the aforementioned breathing ports, It is formed by a PTFE filter. The aforementioned charging device, By: Supply dry air of dry air or nitrogen gas to the semiconductor wafer storage container, Nitrogen supply unit; And a dry air or a nitrogen gas supplied to the semiconductor wafer storage container, To remove the chemical gas in the semiconductor wafer storage container, And the use of moisture to prevent the occurrence of acid on the surface of the semiconductor wafer, the use of dry air or nitrogen gas to discharge the used dry air, a nitrogen gas discharge unit, The aforementioned dry air, Nitrogen supply unit, It is connected to a hollow container having a supply side with a supply nozzle. And the supply nozzle of the hollow container, It is formed by closely connecting a breathing port fixed to the supply side. -8- 200903689 The above used dry air, Nitrogen gas discharge section, The hollow container having the discharge side with the discharge nozzle is provided with a discharge port for discharging the used dry air or nitrogen gas. And the discharge nozzle of the hollow container, It is formed by closely connecting and fixing the breathing port fixed to the discharge side. Dry air or nitrogen gas supplied to the hollow container on the supply side, By the aforementioned PTFE filter, The dust is removed, And flowing into the semiconductor wafer storage container as a dry air stream or a nitrogen gas stream, The chemical gas in the semiconductor wafer storage container is removed, And remove moisture to prevent acid on the surface of the semiconductor wafer. on the other hand, a PTFE filter through the breathing port on the discharge side, The chemical gas in the semiconductor wafer storage container is removed, And removing moisture to prevent the use of dry acid or nitrogen gas after the acid on the surface of the semiconductor wafer is discharged to the hollow container on the discharge side. Further, the outside is discharged from the discharge port. Applying for the invention described in item 2 of the patent scope, Department provides: A dry air or nitrogen gas charging device in a semiconductor wafer storage container according to the first aspect of the patent application, among them, In dry air, Nitrogen gas supply to the dry air, The nitrogen gas supply path is provided with a buffer gas storage tank. Applying for the invention described in item 3 of the patent scope, Department provides: For example, the dry air or nitrogen gas charging device in the semiconductor wafer storage container described in the second item of the patent scope is applied. among them, The buffer gas storage tank is formed only by having a hollow chamber. Applying for the invention described in item 4 of the patent scope, Department provides: For example, the dry air or nitrogen gas charging device in the semiconductor wafer storage container described in the second item of the patent scope is applied. Which buffers the gas storage tank, The system is provided with -9-200903689 1 or a plurality of filters with a gap in the hollow chamber. Applying for the invention described in item 5 of the patent scope, Department provides: In the semiconductor wafer storage container described in the second aspect of the patent, or a nitrogen gas charging device, Which buffers the gas storage tank, It is attached to a hollow chamber or a plurality of porous plates with a space. Applying for the invention described in item 6 of the patent scope, provide ... for: Filling the electric removal device with dry air or nitrogen gas in the semiconductor wafer storage container, It is used in a plurality of breathing ports provided in a bottom plate of a semiconductor crystal wafer wafer storage container. Connect the breathing port fixed to the breathing port and the discharge side, An electrostatic discharge device for charging a semiconductor wafer to be filled with a dry air or nitrogen gas charging device, for: Each of the aforementioned breathing ports, It is formed by a PTFE filter. The aforementioned static electricity removing device, By: Supplying ionized air of ionized dry air or ionized nitrogen gas into the aforementioned semiconductor crystal container, Ionized nitrogen gas supply unit; And ionized dry air or ionized nitrogen gas supplied to the semicircular storage container, The chemical gas in the semiconductor wafer storage container is described. And removing the static water to remove the acid on the surface of the semiconductor wafer, and then using the ionized dry air or the ionized nitrogen gas to discharge the dry air, An ionized nitrogen gas discharge unit, The aforementioned ionized dry air, Ionized nitrogen gas supply unit, a hollow container having a supply side to the nozzle is connected to an ion generating unit that supplies dry air or nitrogen. And the supply nozzle of the hollow container, If the application of dry air is provided, there is a semi-circular phase in the supply side. The characteristics of the container are rounded and stored. The conductor crystal is removed. After the use of the gas ion is tightly connected to the breathing port of the supply side, the gas is tightly connected to the -10-200903689, The use of ionized dry air, Ionized nitrogen gas discharge section, The hollow container having the discharge side of the discharge nozzle is provided with a discharge port for discharging the ionized dry air or the ionized nitrogen gas to be used. And the discharge nozzle of the hollow container, It is formed by closely connecting the breathing ports fixed to the discharge side. Dry air or nitrogen gas supplied to the hollow container on the supply side, Ionized to become ionized dry air or ionized nitrogen gas, And by the aforementioned PTFE filter, Suppress the loss of ions, The dust is removed, And flowing into the semiconductor wafer storage container as an ionized dry air stream or an ionized nitrogen gas stream. Removing the chemical gas in the semiconductor wafer storage container, And remove static electricity, Further removing moisture, And prevent the acid on the surface of the semiconductor wafer, on the other hand, Removing the chemical gas in the semiconductor wafer storage container, and, Remove static electricity, and then, Will remove moisture, And after the occurrence of acid on the surface of the semiconductor wafer is prevented, the ionized dry air or the ionized nitrogen gas is discharged to the hollow container on the discharge side through the PTFE filter of the breathing port on the discharge side. Further, the outside is discharged from the discharge port. Applying for the invention described in item 7 of the patent scope, Department provides: An electrostatic discharge device using a dry air or nitrogen gas charging device in a semiconductor wafer storage container as described in claim 6 of the patent scope, among them, For ionizing dry air, Dry air of the ionized nitrogen gas supply unit, The nitrogen gas supply path is provided with a buffer gas storage tank. Applying for the invention described in item 8 of the patent scope, Department provides: An electrostatic discharge device using a dry air or nitrogen gas charging device in a semiconductor wafer storage container as described in claim 7 of the -11 - 200903689 patent scope, The buffer gas storage tank is formed by only having a hollow chamber. Applying for the invention described in item 9 of the patent scope, Provided by the application of the static electricity removing device using the dry air or nitrogen gas charging device in the semiconductor wafer storage container described in the seventh aspect of the patent, The buffer gas storage tank is provided with one or a plurality of filters having a space in the hollow chamber. Applying for the invention described in item 10 of the patent scope, Department provides: An electrostatic discharge device using a dry air or a nitrogen gas charging device in a semiconductor wafer storage container as described in claim 7 of the patent scope, Which buffers the gas storage tank, A plurality of perforated plates are provided in the hollow chamber or have a space. According to the invention described in item 1 of the patent application scope, Without opening the lid of the semiconductor wafer container, By passing through a PTFE filter provided on the supply side of the suction port, Supply dry air or nitrogen gas to the semiconductor wafer storage container. Being able to remove chemical gases, and, Remove moisture to prevent acid on the surface of the semiconductor wafer, It is possible to prevent corrosion of the semiconductor wafer. According to the invention described in the second to fifth aspects of the patent application, When a dry air or a nitrogen gas is supplied into the semiconductor wafer storage container by the supply nozzle, Until the pressure in the semiconductor wafer storage container rises, The initial inflow rate is fast 'slower as the pressure rises', but is supplied to the hollow container on the supply side by providing a buffer gas storage tank 'the flow rate of the dry air or the nitrogen gas is equalized'. When it is supplied to the semiconductor wafer storage container as a dry air stream or a nitrogen gas stream, it can be prevented from being blown up by dust at the bottom of the semiconductor wafer storage container which is retained in -12 - 200903689. In addition, According to the invention described in item 4 of the patent application, Compared with the invention described in claim 3, Not only can a large flow rate be uniformed, By buffering the gas storage tank, The dust generated by the on-off valve provided on the upstream side can be removed. Further, according to the invention described in item 5 of the patent application scope, Compared with the invention described in claim 3, It is possible to achieve a uniform flow rate. According to the invention described in item 6 of the patent application scope, Without opening the lid of the semiconductor wafer container, By passing through a PTFE filter provided on the supply side of the suction port, The dust is supplied to the semiconductor wafer storage container, and the dust is removed. But the ion does not lose ionized dry air or ionized nitrogen gas, By ionizing dry air or ionizing nitrogen gas, To remove the chemical gas in the aforementioned semiconductor wafer storage container, and, Remove moisture to prevent acid on the surface of the semiconductor wafer, Can prevent corrosion of the semiconductor wafer, and then, The removal of static electricity from the semiconductor wafer can be performed. According to the invention described in Sections 7 to 10 of the patent application, When the ionized dry air or the ionized nitrogen gas is supplied into the semiconductor wafer storage container by the supply nozzle, 'until the pressure in the semiconductor wafer storage container rises, The initial inflow speed is fast, Although it slows down as the pressure rises, But by providing a buffer gas storage bucket, The flow rate of dry air or nitrogen gas is homogenized, Flow into the hollow container on the supply side, The situation in which the ionized dry air stream or the ionized nitrogen gas stream is urgently supplied into the semiconductor wafer storage container can be prevented. The dust remaining at the bottom of the semiconductor wafer storage container is not blown up. In addition, The invention described in the '13-200903689' is in accordance with the invention described in the eighth paragraph of the patent application, Not only can a large flow rate be uniformed, By buffering the gas storage tank, The dust generated by the on-off valve provided on the upstream side can be removed. Further, according to the invention described in the first paragraph of the patent application, Compared with the invention described in claim 8 of the patent application, It is possible to achieve a uniform flow rate. [Embodiment] The present invention is a cover that does not need to open a semiconductor wafer storage container. By supplying dry air or a nitrogen gas to the semiconductor wafer storage container, To remove chemical gases, And a dry air or nitrogen gas charging device that removes moisture to prevent acid on the surface of the semiconductor wafer to prevent corrosion of the semiconductor wafer; And to use the charging device, Supplying ionized dry air or ionized nitrogen gas into the semiconductor wafer storage tray, To remove the chemical gas' and remove the static electricity from the semiconductor wafer, Further removing moisture, Blocking the acid on the surface of the semiconductor wafer, An electrostatic discharge device for the purpose of preventing corrosion of a semiconductor wafer, The dry air or nitrogen gas charging device is the embodiment 1', and the static electricity removing device using the charging device is taken as the second embodiment. Explain below. Embodiment 1 A dry air or nitrogen gas charging device in an embodiment of the present invention will be described in detail based on the drawings. Fig. 1 is a longitudinal sectional view of a semiconductor wafer accommodating bar used in the present invention. As the first 2 shows -14- 200903689, In the semiconductor wafer storage container 1, A switchable cover 3 having a cover flange 2 is mounted on the front side, and, A lifting hook 4 for lifting the semiconductor wafer inner container 1 is attached to the upper portion, and then, The bottom plate 5 is provided with: Mounted on the foot 6 of a mounting table or the like not shown; And a plurality of breathing ports 8 having a PTFE filter 7. A semiconductor wafer 9 is housed in the semiconductor wafer storage container 1. And the semiconductor wafer 9 is processed in a process device (not shown), Stored in the semiconductor wafer storage container 1 The chemical gas is prevented from adhering to the surface of the aforementioned semiconductor wafer 9. Figure 3 is a plan view of a dry air or nitrogen gas charging device in a semiconductor wafer storage container, Fig. 4 is a longitudinal sectional view showing a state in which the charging device is attached to a semiconductor wafer storage container. As the third, As shown in Figure 4, The chemical gas is removed in the semiconductor wafer storage container 1, and, In addition to moisture to prevent the acid on the surface of the semiconductor wafer, Dry air or nitrogen gas filling device A to prevent corrosion of the wafer, By: Dry air of dry air or nitrogen gas is supplied into the semiconductor wafer storage container 1, Nitrogen supply unit 1 1 ; And a dry air or a nitrogen gas supplied to the semiconductor wafer storage container 1 The chemical gas in the semiconductor wafer storage container 1 is removed and the moisture is removed to prevent dry air or nitrogen gas from being discharged from the surface of the semiconductor wafer from being used. The nitrogen gas discharge unit 12 is constituted. and, The aforementioned dry air, The nitrogen gas supply unit 11 is connected to the hollow container 4 provided with the supply side of the supply nozzle 13 . The hollow container 14' on the supply side is an opening portion 15 on the upstream side of the PTFE filter 7 that can be tightly coupled and fixed to the port 200a of the respiration 200903689 provided on one side of the bottom plate 5 of the semiconductor wafer storage container 1. the way, The front side of the supply nozzle 13 is formed in a slightly conical shape. and, Supply dry air or dry air of nitrogen gas, The downstream side of the nitrogen gas supply pipe 16 communicates with the peripheral wall of the hollow vessel 14 and opens. And in the dry air, The dry air of the upstream side of the nitrogen gas supply pipe 16 Nitrogen supply port 1 7 is equipped with an on-off valve 18. By adjusting the on-off valve 18 To perform the aforementioned flow adjustment of dry air or nitrogen gas, And the control of the stop and start of the aeration. and then, Dry air between the aforementioned switching valve 18 and the hollow container 14 The nitrogen gas supply pipe 16 is provided with a buffer gas storage tank 19 The dry air or nitrogen gas supply device, which has never been shown, passes through the dry air, The nitrogen gas supply port is supplied to the dry air, The nitrogen gas is supplied to the dry air or nitrogen gas of the tube 16, 24 By being introduced into the aforementioned buffer gas storage tank 19, The flow rate of the dry air or nitrogen gas 24 is uniformly sentenced. It is introduced into the hollow container 14 described above. That is, the buffer gas storage tank 1 9 has: As shown in Figure 5, Only in the form of a hollow chamber 21, As shown in Figure 6, One or a plurality of filters 22 having a space are provided in the hollow chamber 21, And as shown in Figure 7, One or a plurality of porous plates 23 having a space are provided in the hollow chamber 21. As the sixth, As shown in Figure 7, The dry air or nitrogen gas 24 is passed through the filter 22 or the perforated plate 23 provided in the hollow chamber 21 of the aforementioned buffer gas storage tank 19 Compared with the form without the filter in Figure 5, Proportional to the flow rate, The pressure loss becomes large. Using the characteristics of the filters 22 and the perforated plates 23, And the characteristics of the buffer gas storage tank 19, Suppressing the initial inflow velocity of the dry--16-200903689 air or nitrogen gas 24 in the semiconductor wafer storage container 1 from the dry air or nitrogen gas charging device A of the present invention can prevent the bottom of the semiconductor wafer storage container 1 All the dust rises. In addition, When using the buffer air tank 19 without the filter form as shown in the above fifth figure, 7 is not comparable to the buffer gas storage tank 19, For the suppression of the initial inflow speed and the prevention of dust rise, Although it is worse, However, in the present invention, It is also possible to use the buffer gas storage tank 19 shown in Fig. 5. a dry air or nitrogen gas body 24 supplied to the aforementioned hollow vessel 14, The dust is removed by the PTFE filter 7 of the breathing port 8a on the supply side. The dry air stream or the nitrogen gas stream 25 flows into the semiconductor wafer accommodating container 1 and flows in a chaotic manner. Removing the chemical gas in the semiconductor wafer storage container 1, And removing moisture prevents the acid on the surface of the semiconductor wafer from occurring. on the other hand, The above used dry air, The nitrogen gas discharge unit 12 is attached to the peripheral wall of the hollow container 27 having the discharge side of the discharge nozzle 26, Opened with: In the aforementioned semiconductor wafer storage container 1, Remove chemical gases, And remove moisture, And the discharge port 29 for discharging the dry air or the nitrogen gas 28 after the occurrence of the acid of the semiconductor wafer is prevented, And the front end side of the discharge nozzle 26 is formed in a slightly conical shape. The opening portion 30 on the downstream side of the P T F E filter 7 fixed to the breathing port 8 b provided on the discharge side of the bottom plate 5 of the semiconductor wafer storage container 1 is tightly coupled. In the semiconductor wafer storage container 1 described above, Remove chemical gases, And the water is removed to prevent the occurrence of acid on the surface of the semiconductor wafer, and the use of the PTFE filter 7 and the discharge nozzle 26 through the discharge port 8 b of the discharge side is carried out after the use of the -7-200903689 dry air or nitrogen gas 2 8 ' In the hollow container 27, after that, It is discharged to the outside from the discharge port 29. The action of the dry air or nitrogen gas charging device A in the first embodiment of the present invention constructed as described above will be explained. The breathing port 8a provided on the supply side of the pTFE filter 7 provided on the bottom plate $ of the semiconductor wafer storage container 1 in which the semiconductor wafer 9 is housed is provided. The dry air constituting the aforementioned charging device A is tightly coupled, The supply nozzle 1 3 ' of the hollow container 1 * on the side of the nitrogen supply unit 1 and the breathing port 8 b on the other side are closely coupled and fixed to form the dry air of the charging device A, The discharge nozzle 26 of the hollow container 27 on the side of the nitrogen gas discharge portion ι2. After the semiconductor wafer storage container 1 is installed and the aforementioned charging device A is installed, the dry air that has never been shown is Nitrogen supply device through dry air, Nitrogen gas supply pipe 16 to dry air, When the hollow capacity 14 on the side of the nitrogen supply unit 1 is supplied with dry air or nitrogen gas 24, a dry air or nitrogen gas body 24 introduced into the hollow vessel 14, The dust in the dry air or nitrogen gas 24 is removed by passing through the FE filter 7' of the breathing port 8a on the supply side. The dry air or nitrogen gas stream 25 flows into the semiconductor wafer storage container 1 and flows in a turbulent flow, and the chemical gas in the semiconductor wafer storage container 1 is removed and the moisture is removed to prevent the occurrence of acid on the surface of the semiconductor wafer. Corrosion of the semiconductor wafer 9 can be prevented. Demon list', The reduction + A removes the chemical gas in the semiconductor wafer storage container 1 and removes the use of acid to prevent the occurrence of acid on the surface of the semiconductor wafer. _ Picking body 2 8 ' is the P T F Ε -18- 200903689 filter 7 and discharge nozzle 26 through the breathing port 8 b of the discharge side, Flowing into the hollow container 27, after that, It is discharged from the outside of the discharge port 29. Embodiment 2 The dry air or nitrogen gas charging device formed by the above configuration will be used as the embodiment 2 of the invention. Explain in detail according to the drawings. Figure 8 is a plan view of an electrostatic removal device using the dry air or nitrogen gas charging device of the present invention, Figure 9 is a view showing that the static electricity removing device is mounted on the first 2 is a longitudinal cross-sectional view showing the state of the semiconductor wafer container shown in the drawing. As the eighth, As shown in Figure 9, The static electricity removing device B that removes static electricity from the semiconductor wafer 9 in the semiconductor wafer storage container 1 is removed. Drying air or nitrogen gas supplied to the dry air or nitrogen gas charging device A, The nitrogen supply unit 11 is ionized dry air, The ionized gas gas supply unit 11a is used, and, After using the dry air in the charging device A, The nitrogen gas discharge portion 12 is treated as: By ionized dry air or ionized nitrogen gas supplied into the semiconductor wafer storage container 1, Removing the chemical gas in the semiconductor wafer storage container 1, And removing water' prevents the acid from occurring on the surface of the semiconductor wafer. Further, after the static electricity on the surface of the semiconductor wafer 9 is removed, the ionized dry air or ionized nitrogen gas discharge portion 12a is used. on the other hand, Further, the hollow container 14 is provided on the supply side of the supply nozzle 13 constituting the charging device A, The ion generating portion 31 that ionizes the dry air or the nitrogen gas 24 is formed. The other components are the same as the aforementioned charging device A, Use the same symbol to explain. -19- 200903689 The aforementioned supply side hollow container 14, In order to closely connect the opening portion 15 fixed to the upstream side of the PTFE filter 7 provided on the supply port 8a of the bottom plate 5 of the semiconductor wafer storage container 1, The front side of the supply nozzle 1 3 is formed in a slightly conical shape. and, The dry air supplied to the dry air or the nitrogen gas body 24 is opened by the downstream side of the nitrogen gas supply pipe 16 to communicate with the peripheral wall of the hollow container 14. And in the dry air, Dry air on the upstream side of the nitrogen gas supply pipe 16, Nitrogen gas supply port 1 7 is equipped with an on-off valve 1 8 By adjusting the on-off valve 18 The flow rate adjustment of the dry air or nitrogen gas and the control of stopping and starting the gas supply are performed. and then, Dry air between the on-off valve 18 and the hollow container 14 The nitrogen gas supply pipe 16 is provided with a buffer gas storage tank 19 The dry air or nitrogen gas supply device, which has never been shown, passes through the dry air, The nitrogen gas supply port is supplied to the dry air, The nitrogen gas is supplied to the dry air or nitrogen gas of the tube 16 , By being introduced into the aforementioned buffer gas storage tank 19, The flow rate of the dry air or nitrogen gas 24 is uniformized. It is introduced into the hollow container 14 described above. That is, the buffer gas storage tank 1 9 has: As shown in Figure 5, Only in the form of a hollow chamber 21, As shown in Figure 6, One or a plurality of filters 22 having a space are provided in the hollow chamber 21, And as shown in Figure 7, One or a plurality of porous plates 23 having a space are provided in the hollow chamber 21. As the sixth, As shown in Figure 7, The dry air or nitrogen gas body 24 is passed through the filter 22 or the perforated plate 2 3 disposed in the hollow chamber 21 of the aforementioned buffer gas storage tank 19. Compared with the form without the filter in Figure 5, In proportion to the flow rate, the pressure loss becomes large. Using the characteristics of the filters 22 and the perforated plates 23 of -20-200903689, And the characteristics of the buffer gas storage tank 19, The initial inflow velocity of the dry air or the nitrogen gas 24 in the semiconductor wafer storage container 1 from the static electricity removing device B of the present invention is suppressed. It is possible to prevent all of the dust at the bottom of the semiconductor wafer storage container 1 from rising. In addition, When using the buffer gas storage tank 19 without the burner type as shown in the above fifth drawing, And the sixth, 7 shows the buffer gas storage tank 19 compared to For the suppression of the initial inflow speed and the prevention of dust rise, Although it is worse, However, in the present invention, It is also possible to use the buffer gas storage tank 19 shown in Fig. 5. In addition, The ion generating portion 31 for ionizing the dry air or nitrogen gas 24 supplied to the hollow container 14 is shown in Fig. 10. For example, ionized dry air using a soft X-ray tube, The ionized nitrogen gas supply unit 11a. In order to prevent the straightness of the soft X-ray 1 0 3 irradiated from the soft X-ray tube (ion generating portion 3 1 ) to the hollow container 14 via the window 101, A soft X-ray shielding sheet 102 having a gap 104 is formed between the supply nozzle 13 and the supply container 13 of the hollow container 14. Through dry air, The nitrogen gas supply pipe 16 is supplied with dry air or nitrogen gas 24, It is ionized in the hollow container 14 by the window 101 being irradiated with the soft X-ray 103. Become + ion and - ion 3 2, Through the gap 10 04 between the supply nozzle 13 of the hollow container 14 and the soft X-ray shielding sheet 102 The inside of the semiconductor wafer storage container 1 is ejected from the supply nozzle 13 as ionized dry air or ionized nitrogen gas 33. a dry air or nitrogen gas body 24 supplied to the aforementioned hollow vessel 14, Is ionized by ions 32, And become ionized dry air or ionized nitrogen gas 33, The dust is removed by the PTFE filter 7-21-200903689 of the breathing port 8a on the supply side, The ionized dry air stream or the ionized nitrogen gas stream 34 flows into the semiconductor wafer storage container 1 and flows in a chaotic manner. In the semiconductor wafer storage container 1, Remove chemical gases, And removing the static electricity carried by the semiconductor wafer 9, and then, Removal of moisture prevents the formation of acid on the surface of the semiconductor wafer. By using the aforementioned PTFE filter 7, Suppress the loss of ions, Further, the dust is removed, and the ionized dry air stream or the ionized nitrogen gas stream 34 flows into the semiconductor wafer storage container 1. On the other hand, the used ionized dry air or ionized nitrogen gas discharge portion 1 2 a is attached to the peripheral wall □ of the hollow container 27 having the discharge side of the discharge nozzle 26 to open: In the semiconductor wafer storage container i, Remove the chemical gas' and remove the static electricity that is carried, Further removing moisture, After the occurrence of the acid on the surface of the semiconductor wafer is prevented, the ionized dry air or the discharge port for discharging the ionized nitrogen gas 35 is discharged, 29 and, The front side of the discharge nozzle 26 is formed in a slightly conical shape. The opening portion 30 on the upstream side of the PTFE filter 7 fixed to the breathing port 8b provided on the discharge side of the bottom plate 5 of the semiconductor wafer storage container 1 can be closely connected. In the semiconductor wafer storage container 1, Remove chemical gases, And remove the static electricity that is carried, Further removing moisture, After the generation of acid on the surface of the semiconductor wafer is prevented, ionized dry air or ionized nitrogen gas is used, The PTFE filter 7 and the discharge nozzle 26 passing through the breathing port 8b on the discharge side flow into the hollow container 27, after that, It is discharged to the outside by the discharge port 29. In addition, In each of the aforementioned breathing ports 8, Although the P T F E filter 7' is provided on either of the supply side and the discharge side, any one of the breathing ports 8 can be used as the supply side and the discharge side. -22-200903689 The action of the static electricity removing device B in the second embodiment of the present invention formed by the above configuration will be explained. The breathing port 8a provided on the supply side of the P TFE filter 7 provided on the bottom plate 5 of the semiconductor wafer storage container 1 in which the semiconductor wafer 9 is housed is provided. The ionized dry air constituting the static electricity removing device B is closely coupled and fixed, The supply nozzle 13 of the hollow container 14 on the side of the ionized nitrogen gas supply unit 11a, Further, the breathing port 8b on the discharge side is closely coupled and fixed to form the ionized dry air which constitutes the static electricity removing device B, The discharge nozzle 26 of the hollow container 27 on the side of the ionized nitrogen gas discharge portion 12a is discharged. After the semiconductor wafer storage container 1 is provided with the static electricity removing device B, Dry air or nitrogen gas from dry air supply units not shown, dry air, The nitrogen gas supply pipe 16 is supplied to the ionized dry air, a hollow container 14 on the 1 a side of the ionized nitrogen gas supply unit, and, When the ion generating unit 31 supplies a soft X-ray such as ionizing the dry air in the hollow container 14, The dry air or nitrogen gas in the hollow vessel 14 is ionized. And become ionized dry air or ionized nitrogen gas 33, By passing through the PTFE filter 7 of the breathing port 8 a on the supply side, Suppress the loss of ions, and, Removing the dust in the ionized dry air or ionized nitrogen gas 33, Become an ionized dry air stream or an ionized nitrogen gas stream 34, Flowing into the semiconductor wafer storage container 1 and flowing in a chaotic manner, Remove chemical gases, And removing the static electricity carried by the semiconductor wafer 9, And by the removal of moisture, Prevents the occurrence of acid on the surface of the semiconductor wafer. then, The chemical gas in the semiconductor wafer storage container 1 is removed and the static electricity carried by the semiconductor wafer 9 is removed. And by removing water -23- 200903689 points, After the occurrence of the acid on the surface of the semiconductor is prevented, the ionized dry air or ionized nitrogen gas is used. The PTFE filter 7 and the discharge nozzle 26 passing through the breathing port 8 b on the discharge side, Flowing into the hollow container 27, after that, It is discharged to the outside from the discharge port 29. and then, As mentioned above, In order to prevent the intrusion of dust on the bottom plate 5 of the semiconductor wafer storage container 1, And inhibiting the loss of ions, A PTFE filter 7 is provided. The PTFE filter 7 is different from the glass fiber filter which uses glass fiber as a plain material. Rather, it is a very porous filter that extends the polytetramethylene film. And as a filter user. And, Even if the aforementioned glass fiber filter is used in the present invention, Ionized dry air or ionized nitrogen gas, With the glass fiber filter, Ion loss, The invention cannot be employed. on the other hand, In the PTFE filter 7 used in the present invention, Can suppress the loss of ions to some extent, Further, ionized dry air or ionized nitrogen gas 24 is introduced into the semiconductor wafer storage container 1. Use the device shown in Figure 11 for its testing. That is, the test method uses the ion generating device to cause the generated ions to be individually determined by the static elimination time measuring device to determine the static elimination time in the case of no filter, After the PTFE filter passes the post-elimination time, And the glass fiber filter passes the post-elimination time. The measurement results are as follows. Supply air pressure to the ion generator: 0. 5MPa U) When there is no filter 〇 . 4 seconds (+charged power-off time 値) -24- 200903689 〇. 5 seconds (-charged power-off time 値) (2) After PTFE filter passes 1 · 9 seconds (+ charged power-off time 値) 4 · 7 seconds (one-time power-off time 値) (3) Glass fiber filter passes After 00 seconds (+charged power-off time 値) 00 seconds (-charged power-off time 値) From the above measurement results, as in (1), in the absence of filter obstacles, of course, by ionizing dry air In a short time, it can be de-energized, but as in (2), when there is an obstacle of the PTFE filter, although the degree of de-energization deteriorates to some extent, it can be verified that the electric power can be removed. In addition, as in (3), if there is an obstacle to the glass fiber filter, it is verified that there is no way to remove electricity. That is, it can be confirmed that the glass fiber filter completely loses ions of the ionized dry air or the ionized nitrogen gas. Further, according to the above verification, the PTFE filter can suppress the loss of ions of the ionized dry air or the ionized nitrogen gas 24 to some extent, and it can be known that it can be introduced into the semiconductor wafer container 1. In the case where the ionized dry air or the ionized nitrogen gas 33 is supplied into the semiconductor wafer storage container, the pressure in the semiconductor wafer storage container 1 is low, and the ionized dry air is low at the start of supply. In addition, the intrusion wind speed in the semiconductor wafer storage container 1 in the ionized nitrogen gas 3 is increased, and dust adhering to the bottom of the semiconductor wafer storage container 1 is raised and adhered to the surface of the semiconductor wafer 9. In addition, when the supply time of the ionized dry air or the ionized nitrogen gas 33 to the semiconductor wafer storage container 1 is -25-200903689, the pressure in the semiconductor wafer storage container 1 rises, and the ionized dry air or The intrusion wind speed of the ionized nitrogen gas 33 to the semiconductor wafer storage container 1 is slow, and dust does not rise. From the foregoing point of view, the present invention is a dry air between the valve 20 and the hollow container 14 in the supply path of the dry air or nitrogen gas body 24 of the static electricity removing device B, and the nitrogen gas supply pipe 18 is provided with a buffer gas storage tank 2 1 The flow rate of the dry air or the nitrogen gas 24 flowing into the hollow container 14 is made uniform. Preventing: the homogenized dry air or nitrogen gas 24 is flowed into the hollow vessel 14 to be ionized into an ionized dry air or ionized nitrogen gas 33 as an ionized dry air stream or The ionized nitrogen gas stream 34 is supplied to the semiconductor wafer storage container 1 in an imminent manner to prevent the dust accumulated in the bottom portion of the semiconductor wafer storage container 1 from rising. The functions shown in Figs. 5 to 7 of the above-described buffer gas storage tank 19 are the same as those described above, and the description thereof will be omitted. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a longitudinal cross-sectional view showing a semiconductor wafer storage container used in a dry air or nitrogen gas charging device in a semiconductor wafer storage container of the present invention. Figure 2 is a bottom view of the same. Fig. 3 is a plan view showing a dry air or nitrogen gas charging device in the semiconductor wafer container of the present invention. Fig. 4 is a longitudinal sectional view showing a state in which a dry air or a nitrogen gas charging device in the semiconductor wafer storage container of the present invention is mounted on a semiconductor wafer storage container. -26- 200903689 Fig. 5 is a partially cutaway perspective view showing a buffer gas storage tank used in a dry air or nitrogen gas charging device in the semiconductor wafer container of the present invention. Fig. 6 is a partially cutaway perspective view showing another embodiment of a buffer gas storage tank used in a dry air or nitrogen gas charging device in the semiconductor wafer container of the present invention. Fig. 7 is a partially cutaway perspective view showing still another embodiment of a buffer gas storage tank used in a dry air or nitrogen gas charging device in the semiconductor wafer container of the present invention. Fig. 8 is a plan view showing an electrostatic discharge apparatus using a dry air or nitrogen gas charging device in the semiconductor wafer storage container of the present invention. Fig. 9 is a longitudinal sectional view showing a semiconductor wafer storage container in which a static electricity removing device using a dry air or nitrogen gas charging device in the semiconductor wafer storage container of the present invention is mounted on a semiconductor wafer storage container. 1 is a diagram showing an example in which an ionizing dry air or an ionized nitrogen gas supply unit in a static electricity removing apparatus using a dry air or a nitrogen gas charging device in a semiconductor wafer storage container of the present invention uses a soft X-ray tube. Longitudinal section of an important part. Fig. 1 is a schematic illustration of an ion loss test apparatus for a filter in the present invention. [Main component symbol description] 1 : Semiconductor wafer storage container 2 : Cover flange 3 : Cover -27- 200903689 4 : Lifting enough 5 : Base plate 6 : Foot 7 : PTFE filter 8 : Breathing port 9 = Semiconductor crystal Round 1 1 : Dry air, nitrogen gas supply unit 12: Dry air used, nitrogen gas discharge unit 1 3 : Supply nozzle 14 : Hollow container 1 5 : Opening 1 6 : Dry air, nitrogen gas supply valve 1 7 : Dry Air, nitrogen gas supply port 1 8 : On-off valve 1 9 = Buffer gas storage tank 2 1 : Hollow chamber 22 Filter 2 3 : Multi-well plate 24 : Dry air or nitrogen gas 2 5 : Dry air flow or nitrogen gas flow 26 : Discharge nozzle 27: hollow container 28: dry air or nitrogen gas used 29: discharge port -28-