TWI452646B - A dry air or a nitrogen gas filling device in a semiconductor wafer storage container, and a wafer electrostatic removing device using the same - Google Patents
A dry air or a nitrogen gas filling device in a semiconductor wafer storage container, and a wafer electrostatic removing device using the same Download PDFInfo
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Description
本發明係關於藉由收納半導體製造所使用的半導體晶圓的半導體晶圓收納容器內之化學氣體或水分之除去，來阻止前述半導體晶圓表面之酸的發生，而將乾空氣或氮氣體填充於前述半導體晶圓收納容器內之填充裝置，及使用該裝置之除去半導體晶圓表面的靜電之靜電除去裝置。The present invention relates to the removal of chemical gas or moisture in a semiconductor wafer storage container for accommodating a semiconductor wafer used for semiconductor manufacturing, thereby preventing the occurrence of acid on the surface of the semiconductor wafer, and filling the dry air or nitrogen gas. A filling device in the semiconductor wafer storage container and an electrostatic discharge device using the device to remove static electricity from the surface of the semiconductor wafer.
以往，在微環境式潔淨室的半導體製造工程中，半導體晶圓之微細化向前邁進，加工製程也變得複雜。特別是，在藉由鹵系氣體的蝕刻工程中，蝕刻後殘留的鹵系氣體與乾空氣中的水分反應而產生酸，由於該酸對半導體晶圓的腐蝕，而成為大的問題，作為其對策，係採用：將加工後的晶圓收納於半導體晶圓收納容器後，以無水分的乾空氣或氮氣體予以置換，來阻止酸(acid)的發生，以防止半導體晶圓之腐蝕的方法。In the past, in the semiconductor manufacturing process of the micro-environment clean room, the miniaturization of the semiconductor wafer has advanced, and the processing process has become complicated. In particular, in the etching process of a halogen-based gas, the halogen-based gas remaining after the etching reacts with the moisture in the dry air to generate an acid, which is a problem of corrosion of the semiconductor wafer. The countermeasure is to prevent the occurrence of acid and prevent the corrosion of the semiconductor wafer by storing the processed wafer in a semiconductor wafer storage container and replacing it with dry air or nitrogen gas without moisture. .
另外，在前述微環境式潔淨室之半導體製造工程中，雖將晶圓收納於半導體晶圓收納容器內，而予以搬運、使其待機，但是對半導體晶圓收納容器之收納時，或在半導體晶圓收納容器搬運中，半導體晶圓收納容器內的晶圓帶電，而發生半導體電路的靜電破壞，或基於靜電而使塵埃附著於晶圓表面等之問題，作為其對策，現狀係於前述半導體晶圓收納容器的材料混入碳，使具有導電性，來抑制 晶圓所帶之靜電。Further, in the semiconductor manufacturing process of the micro-environment clean room, the wafer is stored in the semiconductor wafer storage container, and is transported and placed in standby. However, when the semiconductor wafer storage container is housed, or in the semiconductor In the process of transporting the wafer storage container, the wafer in the semiconductor wafer storage container is charged, and electrostatic breakdown of the semiconductor circuit occurs, or dust adheres to the surface of the wafer due to static electricity. The material of the wafer storage container is mixed with carbon to make it electrically conductive to suppress The static electricity carried by the wafer.
然後，關於以：不打開半導體晶圓收納容器的蓋子，對該半導體晶圓收納容器內供給乾空氣或氮氣體，來除去化學氣體，並且除去水分來阻止半導體晶圓表面的酸之發生，以防止半導體晶圓的腐蝕為目的之乾空氣或氮氣體填充裝置；及以：對前述半導體收納容器內供給離子化乾空氣或離子化氮氣體，來除去化學氣體，並且除去半導體晶圓所帶之靜電，進而除去水分來阻止半導體晶圓表面的酸之發生，以防止半導體晶圓的腐蝕為目的之半導體晶圓收納容器內晶圓靜電除去裝置，即使回溯檢索過去的專利文獻，完全未揭示有此等乾空氣或氮氣體填充裝置及靜電除去裝置。Then, the lid of the semiconductor wafer storage container is not opened, dry air or a nitrogen gas is supplied into the semiconductor wafer storage container to remove chemical gas, and moisture is removed to prevent acid generation on the surface of the semiconductor wafer. a dry air or nitrogen gas filling device for preventing corrosion of a semiconductor wafer; and supplying ionized dry air or ionized nitrogen gas to the semiconductor storage container to remove chemical gas and removing the semiconductor wafer Electrostatic discharge, which removes moisture to prevent the occurrence of acid on the surface of the semiconductor wafer, and prevents the semiconductor wafer from being corroded for the purpose of preventing the corrosion of the semiconductor wafer. The wafer electrostatic storage device in the semiconductor wafer storage container does not disclose any of the patent documents in the past. Such dry air or nitrogen gas filling devices and static electricity removing devices.
如前述以往技術般，為了防止鹵系氣體與水分的反應之酸的發生、腐蝕，雖採取於半導體晶圓收納容器內填充水分極少之乾空氣或氮氣體的方法，但是為了不使生產性降低，要求在短時間內之填充。另一方面，於將晶圓收納於半導體晶圓收納容器內時，基於晶圓背面與機械臂的接觸，雖僅發生少許粉塵，但是存在有：此粉塵容易被帶入半導體晶圓收納容器內，而且，此等粉塵或其他原因所導致之粉塵，有時會滯留在前述半導體晶圓收納容器的底部之課題。In order to prevent the generation and corrosion of an acid which reacts between a halogen-based gas and moisture, the method of filling the semiconductor wafer storage container with dry air or nitrogen gas having a very small amount of water is used in order to prevent the productivity from being lowered. , requires filling in a short time. On the other hand, when the wafer is housed in the semiconductor wafer storage container, only a slight amount of dust is generated due to the contact between the back surface of the wafer and the robot arm, but the dust is easily carried into the semiconductor wafer storage container. Moreover, the dust caused by such dust or other causes may remain in the bottom of the semiconductor wafer storage container.
另外，在對半導體晶圓收納容器內填充乾空氣或氮氣 體之情形時，於初期階段中，半導體晶圓收納容器內的壓力為大氣壓，從半導體晶圓收納容器的吸氣口流入內部的乾空氣或氮氣體，係以高速流入，內部的壓力一上昇時，流入速度降低。因此，存在有：前述之初期的乾空氣或氮氣體由於高速流入，半導體晶圓收納容器的底部或晶圓背面之粉塵揚起，而附著於晶圓表面的半導體電路之課題。In addition, the semiconductor wafer storage container is filled with dry air or nitrogen. In the case of the first stage, the pressure in the semiconductor wafer storage container is atmospheric pressure, and the dry air or the nitrogen gas flowing into the inside from the intake port of the semiconductor wafer storage container flows at a high speed, and the internal pressure rises. When the inflow speed is reduced. Therefore, there is a problem in that the dry air or the nitrogen gas in the initial stage is high-speed inflow, and the dust of the bottom of the semiconductor wafer storage container or the back surface of the wafer rises and adheres to the semiconductor circuit on the wafer surface.
進而，雖有嘗試藉由質量流量計等來控制對半導體晶圓收納容器內的流入速度，但是，即使設置質量流量計，也無法抑制開始流入之流速的湧浪(surge)，而且，質量流量計極為貴，存在有投資增大之課題。Further, although it is attempted to control the inflow velocity in the semiconductor wafer storage container by a mass flow meter or the like, even if a mass flowmeter is provided, it is impossible to suppress a surge of a flow velocity at which the inflow is started, and mass flow rate is also suppressed. It is extremely expensive and there is a problem of increased investment.
另一方面，半導體的微細化向前邁進，製造工程之粉塵的管理粒徑也成為奈米等級，由於微弱靜電而產生電路的破壞、粉塵之附著，即使是在前述半導體晶圓收納容器的材料混入碳等之導電性物質的方法，也無法完全防止半導體晶圓所帶的靜電，反之，碳量增加亦關係到半導體晶圓收納容器之化學氣體的發生原因，半導體晶圓所帶的靜電之問題，也存在有無法完全解決之課題。On the other hand, the miniaturization of semiconductors is moving forward, and the management particle size of the dust in the manufacturing process is also in the nanometer level, and the destruction of the circuit and the adhesion of the dust due to the weak static electricity are caused even in the material of the semiconductor wafer storage container. The method of mixing conductive materials such as carbon does not completely prevent static electricity carried by the semiconductor wafer. Conversely, the increase in the amount of carbon is also related to the cause of the chemical gas in the semiconductor wafer storage container, and the static electricity carried by the semiconductor wafer. There are also problems that cannot be completely solved.
另外，雖有半導體製造商，嘗試在將半導體晶圓收納於半導體晶圓收納容器時，以打開半導體晶圓收納容器的蓋子之狀態下，從開放口吹入離子空氣，之後將蓋子關閉之方法等，但是存在有效果有限之課題。In addition, when a semiconductor wafer is stored in a semiconductor wafer storage container, the semiconductor wafer is attempted to open the cover of the semiconductor wafer storage container, and the ion air is blown from the open port, and then the cover is closed. Etc. However, there are problems with limited effects.
本發明係為了解決前述課題所完成者，目的在於提供：不必打開半導體晶圓收納容器的蓋子，藉由對該半導體晶圓收納容器內供給乾空氣或氮氣體，來除去化學氣 體，並且除去水分，阻止半導體晶圓表面的酸之發生，以防止半導體晶圓的腐蝕之乾空氣或氮氣體填充裝置、及使用該填充裝置，藉由對前述半導體晶圓收納容器內供給離子化乾空氣或離子化氮氣體，來阻止滯留在該半導體晶圓收納容器內的底部之粉塵的揚起，並且除去半導體晶圓所帶的靜電，進而除去水分來阻止半導體表面的酸之發生，以防止半導體晶圓的腐蝕之靜電除去裝置。The present invention has been made to solve the above problems, and an object of the invention is to provide a method for removing a chemical gas by supplying dry air or a nitrogen gas to a semiconductor wafer storage container without opening a lid of the semiconductor wafer storage container. a dry air or nitrogen gas filling device that removes moisture, prevents acid from occurring on the surface of the semiconductor wafer, prevents corrosion of the semiconductor wafer, and supplies ions to the semiconductor wafer storage container by using the filling device Drying air or ionized nitrogen gas to prevent dust from rising at the bottom of the semiconductor wafer storage container, and removing static electricity from the semiconductor wafer, thereby removing moisture to prevent acid on the semiconductor surface. A static electricity removing device for preventing corrosion of a semiconductor wafer.
為了解決前述課題，申請專利範圍第1項所記載之發明，係提供：一種半導體晶圓收納容器內之乾空氣或氮氣體填充裝置，其係在設置於收納半導體晶圓之半導體晶圓收納容器的底板之複數個呼吸口中，連結固定於供給側之呼吸口與排出側之呼吸口，用於對半導體晶圓收納容器內填充乾空氣或氮氣體之填充裝置，其特徵為：前述各呼吸口，係具備PTFE過濾器而形成，前述填充裝置，係由以下構成：對前述半導體晶圓收納容器內供給乾空氣或氮氣體之乾空氣/氮氣體供給部；及使用完畢乾空氣/氮氣體排出部，其藉由供給至前述半導體晶圓收納容器內之乾空氣或氮氣體，來除去前述半導體晶圓收納容器內的化學氣體，並且除去水分，而將阻止半導體晶圓表面之酸(acid)的發生後之使用完畢乾空氣或氮氣體予以排出，前述乾空氣/氮氣體供給部，係被連結於具備有供給噴嘴之供給側的中空容器，並且該中空容器的供給噴嘴，係被緊密地連結固定於前述供給側的呼吸口而形成， 前述使用完畢乾空氣/氮氣體排出部，係於具備有排出噴嘴之排出側的中空容器，開設有將前述使用完畢乾空氣或氮氣體予以排出之排出口，並且該中空容器的排出噴嘴，係被緊密地連結固定於前述排出側之呼吸口而形成，被供給至前述供給側之中空容器內的乾空氣或氮氣體，係藉由前述PTFE過濾器使塵埃被除去，作為乾空氣流或氮氣體流而流入前述半導體晶圓收納容器內，將半導體晶圓收納容器內的化學氣體除去，並且除去水分來阻止半導體晶圓表面之酸的發生，另一方面，藉由排出側之呼吸口的PTFE過濾器，將除去前述半導體晶圓收納容器內的化學氣體，並且除去水分來阻止半導體晶圓表面之酸的發生後之使用完畢乾空氣或氮氣體排出至排出側的中空容器，進而從排出口排出外部。In order to solve the above problems, the invention described in claim 1 provides a dry air or nitrogen gas filling device in a semiconductor wafer storage container, which is provided in a semiconductor wafer storage container in which a semiconductor wafer is housed. a plurality of breathing ports of the bottom plate, the breathing port fixed to the breathing port on the supply side and the breathing port on the discharge side, and a filling device for filling the semiconductor wafer storage container with dry air or nitrogen gas, characterized in that: each of the breathing ports The PTFE filter is provided, and the filling device is configured to supply a dry air/nitrogen gas supply unit that supplies dry air or a nitrogen gas to the semiconductor wafer storage container, and a dry air/nitrogen gas exhaust unit that has been used. The part removes the chemical gas in the semiconductor wafer storage container by the dry air or the nitrogen gas supplied into the semiconductor wafer storage container, and removes moisture, thereby preventing acid on the surface of the semiconductor wafer. After the occurrence of the dry air or nitrogen gas, the dry air/nitrogen gas supply unit is connected to the device. A hollow container of the supply-side supply nozzle, the supply nozzle and the hollow vessel, tightly coupled system is fixed to the supply side of the breather port is formed, The dry air/nitrogen gas discharge unit is used in a hollow container having a discharge side of the discharge nozzle, and is provided with a discharge port for discharging the used dry air or nitrogen gas, and the discharge nozzle of the hollow container is The air is supplied to the breathing port on the discharge side, and is supplied to the dry air or the nitrogen gas in the hollow container on the supply side, and the dust is removed by the PTFE filter as a dry air stream or nitrogen. The gas flows into the semiconductor wafer storage container, removes chemical gas in the semiconductor wafer storage container, removes moisture to prevent acid from occurring on the surface of the semiconductor wafer, and on the discharge side The PTFE filter removes the chemical gas in the semiconductor wafer storage container and removes moisture to prevent the use of dry gas or nitrogen gas after the generation of acid on the surface of the semiconductor wafer is discharged to the hollow container on the discharge side, and further The outlet is discharged to the outside.
申請專利範圍第2項所記載之發明，係提供：針對前述申請專利範圍第1項所記載之半導體晶圓收納容器內之乾空氣或氮氣體填充裝置，其中，於乾空氣/氮氣體供給部之乾空氣/氮氣體供給路徑，設置有緩衝儲氣桶。The present invention provides a dry air or nitrogen gas filling device in a semiconductor wafer storage container according to the first aspect of the invention, wherein the dry air/nitrogen gas supply unit is provided in the dry air/nitrogen gas supply unit. The dry air/nitrogen gas supply path is provided with a buffer gas storage tank.
申請專利範圍第3項所記載之發明，係提供：如申請專利範圍第2項所記載之半導體晶圓收納容器內之乾空氣或氮氣體填充裝置，其中，緩衝儲氣桶係只具備中空室而形成。The invention according to claim 3 is the dry air or nitrogen gas filling device in the semiconductor wafer storage container according to the second aspect of the invention, wherein the buffer gas storage tank only has a hollow chamber And formed.
申請專利範圍第4項所記載之發明，係提供：如申請專利範圍第2項所記載之半導體晶圓收納容器內之乾空氣或氮氣體填充裝置，其中緩衝儲氣桶，係於中空室設置有 1個或具有間隔之複數個過濾器。The invention according to claim 4 is the dry air or nitrogen gas filling device in the semiconductor wafer storage container described in claim 2, wherein the buffer gas storage tank is disposed in the hollow chamber Have 1 or a plurality of filters with intervals.
申請專利範圍第5項所記載之發明，係提供：如申請專利範圍第2項所記載之半導體晶圓收納容器內之乾空氣或氮氣體填充裝置，其中緩衝儲氣桶，係於中空室設置有1個或具有間隔之複數個多孔板。The invention according to claim 5, wherein the dry air or nitrogen gas filling device in the semiconductor wafer storage container according to the second aspect of the patent application is provided, wherein the buffer gas storage tank is disposed in the hollow chamber There are one or a plurality of perforated plates having a space.
申請專利範圍第6項所記載之發明，為提供：一種使用半導體晶圓收納容器內之乾空氣或氮氣體填充裝置之靜電除去裝置，係使用填充裝置者，該填充裝置為，在設置於收納半導體晶圓之半導體晶圓收納容器的底板之複數個呼吸口中，連結固定於供給側之呼吸口與排出側之呼吸口，用於對半導體晶圓收納容器內填充乾空氣或氮氣體者；其特徵為：前述各呼吸口，係具備PTFE過濾器而形成，前述靜電除去裝置，係由以下構成：對前述半導體晶圓收納容器內供給離子化乾空氣或離子化氮氣體之離子化乾空氣、離子化氮氣體供給部；及使用完畢離子化乾空氣、離子化氮氣體排出部，其藉由供給至前述半導體晶圓收納容器內之離子化乾空氣或離子化氮氣體，來除去前述半導體晶圓收納容器內的化學氣體，並且除去靜電，進而除去水分來阻止半導體晶圓表面之酸的發生後之使用完畢離子化乾空氣或離子化氮氣體予以排出，前述離子化乾空氣、離子化氮氣體供給部，係於具備有供給噴嘴之供給側的中空容器，連結將乾空氣或氮氣體離子化之離子產生部，並且該中空容器的供給噴嘴，係被 緊密地連結固定於前述供給側的呼吸口而形成，前述使用完畢離子化乾空氣、離子化氮氣體排出部，係於具備有排出噴嘴之排出側的中空容器，開設有將前述使用完畢離子化乾空氣或離子化氮氣體予以排出之排出口，並且該中空容器的排出噴嘴，係被緊密地連結固定於前述排出側之呼吸口而形成，被供給至前述供給側之中空容器內的乾空氣或氮氣體，係被離子化而成為離子化乾空氣或離子化氮氣體，藉由前述PTFE過濾器來抑制離子之喪失使塵埃被除去，作為離子化乾空氣流或離子化氮氣體流而流入前述半導體晶圓收納容器內，將半導體晶圓收納容器內的化學氣體除去，並且除去靜電，進而除去水分，阻止半導體晶圓表面之酸的發生，另一方面，除去前述半導體晶圓收納容器內之化學氣體，並且，除去靜電，進而，使除去水分阻止半導體晶圓表面之酸的發生後之使用完畢離子化乾空氣或離子化氮氣體，介由排出側之呼吸口的PTFE過濾器排出至排出側的中空容器，進而從排出口排出外部。The invention described in claim 6 provides an electrostatic discharge device using a dry air or nitrogen gas filling device in a semiconductor wafer storage container, and a filling device is provided for storage. a plurality of breathing ports of the bottom plate of the semiconductor wafer storage container of the semiconductor wafer are connected to the breathing port on the supply side and the breathing port on the discharge side for filling the semiconductor wafer storage container with dry air or nitrogen gas; It is characterized in that each of the breathing ports is formed by a PTFE filter, and the static electricity removing device is configured to supply ionized dry air or ionized nitrogen gas to ionized dry air in the semiconductor wafer storage container. An ionized nitrogen gas supply unit; and an ionized dry air or ionized nitrogen gas discharge unit that has been used to remove the semiconductor crystal by ionized dry air or ionized nitrogen gas supplied into the semiconductor wafer storage container Rounding the chemical gas in the container and removing static electricity, thereby removing moisture to prevent the surface of the semiconductor wafer After the occurrence of the ionized dry air or the ionized nitrogen gas, the ionized dry air or the ionized nitrogen gas supply unit is provided in a hollow container having a supply side of the supply nozzle, and the dry air or nitrogen is connected. a gas ionized ion generating portion, and the supply nozzle of the hollow container is tied The ionized dry air and the ionized nitrogen gas discharge unit are used in a hollow container having a discharge side of the discharge nozzle, and the ionization is performed on the discharge side of the discharge nozzle. a discharge port through which the dry air or the ionized nitrogen gas is discharged, and the discharge nozzle of the hollow container is formed by being closely coupled and fixed to the breathing port on the discharge side, and is supplied to the dry air in the hollow container on the supply side. Or a nitrogen gas is ionized to become ionized dry air or ionized nitrogen gas, and the PTFE filter suppresses the loss of ions to remove the dust, and flows as an ionized dry air stream or an ionized nitrogen gas stream. The semiconductor wafer storage container removes chemical gas in the semiconductor wafer storage container, removes static electricity, removes moisture, and prevents acid from occurring on the surface of the semiconductor wafer, and removes the semiconductor wafer storage container. a chemical gas, and removing static electricity, thereby removing moisture to prevent acid on the surface of the semiconductor wafer After the occurrence of the ionized dry air or the ionized nitrogen gas, the PTFE filter through the breathing port on the discharge side is discharged to the hollow container on the discharge side, and is discharged from the discharge port to the outside.
申請專利範圍第7項所記載之發明，係提供：針對申請專利範圍第6項所記載之使用半導體晶圓收納容器內之乾空氣或氮氣體填充裝置之靜電除去裝置，其中，於離子化乾空氣、離子化氮氣體供給部之乾空氣/氮氣體供給路徑，設置有緩衝儲氣桶。The invention described in claim 7 is directed to the electrostatic removal device using the dry air or nitrogen gas filling device in the semiconductor wafer storage container described in claim 6 of the patent application, wherein the ionization is dry A dry air/nitrogen gas supply path of the air and ionized nitrogen gas supply unit is provided with a buffer gas storage tank.
申請專利範圍第8項所記載之發明，係提供：如申請 專利範圍第7項所記載之使用半導體晶圓收納容器內之乾空氣或氮氣體填充裝置之靜電除去裝置，其中緩衝儲氣桶，係只具備中空室而形成。The invention described in claim 8 of the patent application is provided as follows: An electrostatic discharge device using a dry air or a nitrogen gas filling device in a semiconductor wafer storage container according to the seventh aspect of the invention, wherein the buffer gas storage tank is formed only by a hollow chamber.
申請專利範圍第9項所記載之發明，係提供：如申請專利範圍第7項所記載之使用半導體晶圓收納容器內之乾空氣或氮氣體填充裝置之靜電除去裝置，其中緩衝儲氣桶，係於中空室設置有1個或具有間隔之複數個過濾器。The invention according to claim 9 is the electrostatic removal device using the dry air or nitrogen gas filling device in the semiconductor wafer storage container as described in claim 7, wherein the gas storage tank is buffered, A plurality of filters are provided in the hollow chamber or have a gap.
申請專利範圍第10項所記載之發明，係提供：如申請專利範圍第7項所記載之使用半導體晶圓收納容器內之乾空氣或氮氣體填充裝置之靜電除去裝置，其中緩衝儲氣桶，係於中空室設置有1個或具有間隔之複數個多孔板。The invention according to claim 10, which provides the static electricity removing device using the dry air or nitrogen gas filling device in the semiconductor wafer storage container as described in claim 7, wherein the gas storage tank is buffered, A plurality of perforated plates are provided in the hollow chamber or have a space.
依據申請專利範圍第1項所記載之發明，不用打開半導體晶圓收納容器的蓋子，藉由通過設置於供給側之呼吸口的PTFE過濾器，來對該半導體晶圓收納容器內供給乾空氣或氮氣體，得以除去化學氣體，並且，除去水分來阻止半導體晶圓表面的酸之發生，能夠防止該半導體晶圓的腐蝕。According to the invention of the first aspect of the invention, the semiconductor wafer storage container is supplied with dry air or by a PTFE filter provided on the supply side breathing port without opening the lid of the semiconductor wafer storage container. The nitrogen gas can remove the chemical gas and remove moisture to prevent acid from occurring on the surface of the semiconductor wafer, thereby preventing corrosion of the semiconductor wafer.
依據申請專利範圍第2~5項所記載之發明，在藉由供給噴嘴對半導體晶圓收納容器內供給乾空氣或氮氣體之情形時，直到半導體晶圓收納容器內的壓力上升為止，初期的流入速度快，雖隨著壓力上升而變慢，但是藉由設置有緩衝儲氣桶，乾空氣或氮氣體的流速被均勻化而流入供給側之中空容器，可防止乾空氣流或氮氣體流急遽供給至半導體晶圓收納容器內的情形，不會將滯留在該半導體晶 圓收納容器內的底部之粉塵吹起。另外，依據申請專利範圍第4項所記載之發明，與申請專利範圍第3項所記載之發明相比，不單可謀求大幅度之流速的均勻化，藉由緩衝儲氣桶，設置於上游側之開關閥所發生的粉塵可以被除去。進而，依據申請專利範圍第5項所記載之發明，與申請專利範圍第3項所記載之發明相比，可以謀求大幅度之流速的均勻化。According to the invention described in the second to fifth aspects of the invention, when the dry air or the nitrogen gas is supplied into the semiconductor wafer storage container by the supply nozzle, the pressure in the semiconductor wafer storage container rises until the initial pressure The inflow speed is fast, although it is slowed down as the pressure rises, but by providing a buffer gas storage tank, the flow rate of the dry air or the nitrogen gas is equalized and flows into the hollow container on the supply side, thereby preventing the dry air flow or the nitrogen gas flow. When it is urgently supplied into the semiconductor wafer storage container, it will not remain in the semiconductor crystal The dust at the bottom of the round storage container is blown up. In addition, according to the invention described in the fourth aspect of the patent application, it is possible to provide a large flow rate uniformity by the invention according to the third aspect of the patent application, and to provide a buffer tank for the upstream side. The dust generated by the on-off valve can be removed. Further, according to the invention described in claim 5, it is possible to achieve a uniform flow rate ratio as compared with the invention described in claim 3 of the patent application.
依據申請專利範圍第6項所記載之發明，不用打開半導體晶圓收納容器的蓋子，藉由通過設置於供給側之呼吸口的PTFE過濾器，來對該半導體晶圓收納容器內供給被除去粉塵，但未喪失離子之離子化乾空氣或離子化氮氣體，藉由該離子化乾空氣或離子化氮氣體，來除去前述半導體晶圓收納容器內的化學氣體，並且，除去水分來阻止半導體晶圓表面的酸之發生，能夠防止該半導體晶圓的腐蝕，進而，可以將半導體晶圓所帶之靜電予以除去。According to the invention of the sixth aspect of the invention, the semiconductor wafer storage container is not opened, and the dust is removed from the semiconductor wafer storage container by the PTFE filter provided on the supply side breathing port. However, the ionized dry air or the ionized nitrogen gas is not lost, and the chemical gas in the semiconductor wafer storage container is removed by the ionized dry air or the ionized nitrogen gas, and the water is removed to prevent the semiconductor crystal. The occurrence of acid on the circular surface prevents corrosion of the semiconductor wafer, and further, the static electricity carried by the semiconductor wafer can be removed.
依據申請專利範圍第7~10項所記載之發明，在藉由供給噴嘴對半導體晶圓收納容器內供給離子化乾空氣或離子化氮氣體之情形時，直到半導體晶圓收納容器內的壓力上升為止，初期的流入速度快，雖隨著壓力上升而變慢，但是藉由設置有緩衝儲氣桶，乾空氣或氮氣體的流速被均勻化而流入供給側之中空容器，可防止離子化乾空氣流或離子化氮氣體流而急遽供給至半導體晶圓收納容器內的情形，不會將滯留在該半導體晶圓收納容器內的底部之粉塵吹起。另外，依據申請專利範圍第9項所記載之發明，與 申請專利範圍第8項所記載之發明相比，不單可謀求大幅度之流速的均勻化，藉由緩衝儲氣桶，設置於上游側之開關閥所發生的粉塵可以被除去。According to the invention described in the seventh to tenth aspects of the invention, when the ionized dry air or the ionized nitrogen gas is supplied into the semiconductor wafer storage container by the supply nozzle, the pressure in the semiconductor wafer storage container rises. In the initial stage, the inflow rate is fast, and the pressure is slowed down. However, by providing a buffer gas storage tank, the flow rate of the dry air or the nitrogen gas is equalized and flows into the hollow container on the supply side, thereby preventing ionization from drying. When the air stream or the ionized nitrogen gas stream is suddenly supplied into the semiconductor wafer storage container, the dust remaining in the bottom portion of the semiconductor wafer storage container is not blown up. In addition, according to the invention described in item 9 of the patent application, In comparison with the invention described in the eighth aspect of the patent application, it is possible to achieve a uniform flow rate without a large flow rate, and the dust generated in the upstream side switching valve can be removed by buffering the gas storage tank.
進而，依據申請專利範圍第10項所記載之發明，與申請專利範圍第8項所記載之發明相比，可以謀求大幅度之流速的均勻化。Further, according to the invention described in claim 10, it is possible to achieve a large flow rate uniformity as compared with the invention described in claim 8 of the patent application.
本發明係一種不用打開半導體晶圓收納容器的蓋子，藉由對該半導體晶圓收納容器內供給乾空氣或氮氣體，來除去化學氣體，並且，除去水分來阻止半導體晶圓表面的酸之發生，以防止該半導體晶圓的腐蝕之乾空氣或氮氣體填充裝置；及使用該填充裝置，對前述半導體晶圓收納容器內供給離子化乾空氣或離子化氮氣體，來除去化學氣體，並且除去半導體晶圓所帶之靜電，進而除去水分，阻止半導體晶圓表面之酸的發生，以防止半導體晶圓之腐蝕為目的之靜電除去裝置，以乾空氣或氮氣體填充裝置為實施例1，另外以使用該填充裝置之靜電除去裝置為實施例2，於以下做說明。The present invention is a method for removing a chemical gas by supplying dry air or a nitrogen gas to the semiconductor wafer storage container without opening a lid of the semiconductor wafer storage container, and removing moisture to prevent acid on the surface of the semiconductor wafer. a dry air or nitrogen gas filling device for preventing corrosion of the semiconductor wafer; and using the filling device to supply ionized dry air or ionized nitrogen gas to the semiconductor wafer storage container to remove chemical gas and remove An electrostatic discharge device for removing static electricity from a semiconductor wafer, thereby removing moisture, preventing acid from occurring on the surface of the semiconductor wafer, and preventing the corrosion of the semiconductor wafer, and using a dry air or nitrogen gas filling device as the first embodiment, The static electricity removing device using the filling device is taken as the second embodiment and will be described below.
實施例1Example 1
依據圖面詳細說明本發明之實施例1中之乾空氣或氮氣體填充裝置。第1圖係本發明所使用之半導體晶圓收納容器的縱剖面圖，第2圖係其底面圖。如第1、2圖所示 般，於半導體晶圓收納容器1中，於前面安裝有具備蓋用凸緣2之可以開關的蓋子3，並且，於上部安裝有將半導體晶圓收內容器1吊起之吊起用鉤4，進而，於底板5設置有：載置於未圖示出之載置台等之腳6；及具備有PTFE過濾器7之複數個呼吸口8。The dry air or nitrogen gas filling apparatus in Embodiment 1 of the present invention will be described in detail based on the drawings. Fig. 1 is a longitudinal sectional view showing a semiconductor wafer storage container used in the present invention, and Fig. 2 is a bottom view thereof. As shown in Figures 1 and 2 In the semiconductor wafer storage container 1, a switchable cover 3 having a cover flange 2 is attached to the front surface, and a lifting hook 4 for lifting the semiconductor wafer receiver 1 is attached to the upper portion. Further, the bottom plate 5 is provided with a leg 6 placed on a mounting table or the like (not shown), and a plurality of breathing ports 8 provided with a PTFE filter 7.
於前述半導體晶圓收納容器1內收納有半導體晶圓9，並且該半導體晶圓9係在製程裝置(未圖示出)中被加工以外，被收納於該半導體晶圓收納容器1內，來防止於前述半導體晶圓9的表面附著化學氣體。The semiconductor wafer 9 is housed in the semiconductor wafer storage container 1 and is housed in the semiconductor wafer storage container 1 in addition to processing in a processing device (not shown). The chemical gas is prevented from adhering to the surface of the aforementioned semiconductor wafer 9.
第3圖係半導體晶圓收納容器內之乾空氣或氮氣體填充裝置的平面圖，第4圖係表示將該填充裝置安裝於半導體晶圓收納容器之狀態的縱剖面圖。如第3、4圖所示般，於半導體晶圓收納容器1內除去化學氣體，並且，除去水分來阻止半導體晶圓表面之酸的發生，以防止晶圓的腐蝕之乾空氣或氮氣體填充裝置A，係藉由：對半導體晶圓收納容器1內供給乾空氣或氮氣體之乾空氣/氮氣體供給部11；及藉由供給至前述半導體晶圓收納容器1內之乾空氣或氮氣體，來除去半導體晶圓收納容器1內的化學氣體，並且除去水分，而將阻止半導體晶圓表面之酸的發生後之乾空氣或氮氣體排出之使用完畢乾空氣/氮氣體排出部12所構成。而且，前述乾空氣/氮氣體供給部11係與具備有供給噴嘴13之供給側的中空容器14連結。Fig. 3 is a plan view showing a dry air or nitrogen gas filling device in a semiconductor wafer storage container, and Fig. 4 is a longitudinal sectional view showing a state in which the filling device is mounted on a semiconductor wafer storage container. As shown in FIGS. 3 and 4, chemical gas is removed from the semiconductor wafer storage container 1, and moisture is removed to prevent acid from occurring on the surface of the semiconductor wafer to prevent dry etching of the wafer or nitrogen gas filling. The device A is a dry air/nitrogen gas supply unit 11 that supplies dry air or a nitrogen gas to the semiconductor wafer storage container 1; and a dry air or nitrogen gas supplied to the semiconductor wafer storage container 1 The dry air/nitrogen gas discharge unit 12 is configured to remove the chemical gas in the semiconductor wafer storage container 1 and remove the moisture, and to remove the dry air or nitrogen gas after the generation of the acid on the surface of the semiconductor wafer is discharged. . Further, the dry air/nitrogen gas supply unit 11 is coupled to the hollow container 14 including the supply side of the supply nozzle 13.
前述供給側之中空容器14，係以能夠緊密地連結固定於設置在半導體晶圓收納容器1的底板5之一側的呼吸 口8a的PTFE過濾器7之上游側的開口部15之方式，供給噴嘴13的前方側形成為略圓錐狀，並且，供給乾空氣或氮氣體之乾空氣/氮氣體供給管16的下游側與該中空容器14的周壁連通開口，且於該乾空氣/氮氣體供給管16的上游側之乾空氣/氮氣體供給口17附近安裝有開關閥18，藉由調整該開關閥18，來進行前述乾空氣或氮氣體之流量調整、及送氣之停止及開始之控制。The hollow container 14 on the supply side is closely connected and fixed to the side of the bottom plate 5 provided on the semiconductor wafer storage container 1 The upstream side opening 15 of the PTFE filter 7 of the port 8a is formed in a slightly conical shape on the front side of the supply nozzle 13, and is supplied to the downstream side of the dry air/nitrogen gas supply pipe 16 of dry air or nitrogen gas. The peripheral wall of the hollow container 14 communicates with the opening, and an on-off valve 18 is attached to the vicinity of the dry air/nitrogen gas supply port 17 on the upstream side of the dry air/nitrogen gas supply pipe 16, and the switching valve 18 is adjusted to perform the foregoing. Flow adjustment of dry air or nitrogen gas, and control of the stop and start of gas supply.
進而，於前述開關閥18與中空容器14間之乾空氣/氮氣體供給管16設置有緩衝儲氣桶19，從未圖示出之乾空氣或氮氣體供給裝置經過乾空氣/氮氣體供給口17而被供給至乾空氣/氮氣體供給管16的乾空氣或氮氣體24，藉由被導入前述緩衝儲氣桶19，該乾空氣或氮氣體24之流速被均勻化，並被導入前述中空容器14內。Further, the dry air/nitrogen gas supply pipe 16 between the switching valve 18 and the hollow vessel 14 is provided with a buffer gas storage tank 19, and the dry air or nitrogen gas supply device (not shown) passes through the dry air/nitrogen gas supply port. The dry air or nitrogen gas 24 supplied to the dry air/nitrogen gas supply pipe 16 is introduced into the buffer gas storage tank 19, and the flow rate of the dry air or nitrogen gas 24 is uniformized and introduced into the hollow Inside the container 14.
即緩衝儲氣桶19係有：如第5圖所示般，只具有中空室21之形式，如第6圖所示般，在中空室21內設置1個或具有間隔之複數個過濾器22，及如第7圖所示般，於中空室21內設置1個或具有間隔之複數個多孔板23之形式。That is, the buffer gas storage tank 19 is provided with only a hollow chamber 21 as shown in Fig. 5, and as shown in Fig. 6, one or a plurality of filters 22 having a space are provided in the hollow chamber 21. As shown in Fig. 7, one or a plurality of porous plates 23 having a space are provided in the hollow chamber 21.
如第6、7圖所示般，乾空氣或氮氣體24一通過設置於前述緩衝儲氣桶19的中空室21內之過濾器22或多孔板23時，與第5圖之沒有過濾器的形式相比，與流速成比例，壓力損失變大。利用此等過濾器22及多孔板23的特性、以及緩衝儲氣桶19的特性，抑制從本發明之乾空氣或氮氣體填充裝置A對半導體晶圓收納容器1內之乾 空氣或氮氣體24的初期流入速度，可以防止前述半導體晶圓收納容器1內之底部所有的粉塵之揚起。As shown in FIGS. 6 and 7, the dry air or nitrogen gas 24 passes through the filter 22 or the perforated plate 23 provided in the hollow chamber 21 of the buffer gas storage tank 19, and the filter without the filter of FIG. Compared with the form, the pressure loss becomes larger in proportion to the flow rate. By using the characteristics of the filters 22 and the perforated plates 23 and the characteristics of the buffer gas storage tank 19, the dry air or nitrogen gas filling device A of the present invention is prevented from being dried in the semiconductor wafer storage container 1. The initial inflow velocity of the air or nitrogen gas 24 prevents the dust from rising at the bottom of the semiconductor wafer storage container 1.
另外，如使用前述第5圖所示之沒有過濾器形式的緩衝儲氣桶19時，與第6、7圖所示之緩衝儲氣桶19相比，針對初期之流入速度的抑制及粉塵之揚起防止，雖多少差些，但是在本發明中，也可以採用第5圖所示之緩衝儲氣桶19。Further, when the buffer air tank 19 having no filter type as shown in the above fifth embodiment is used, the initial inflow speed is suppressed and the dust is suppressed as compared with the buffer air tank 19 shown in Figs. Although the lifting prevention is somewhat inferior, in the present invention, the buffer gas storage tank 19 shown in Fig. 5 can also be used.
被供給至前述中空容器14內的乾空氣或氮氣體24，係藉由供給側之呼吸口8a的PTFE過濾器7來除去粉塵，成為乾空氣流或氮氣體流25流入半導體晶圓收納容器1內且混亂流動，除去該半導體晶圓收納容器1內中之化學氣體，並且除去水分而阻止半導體晶圓表面之酸的發生。The dry air or nitrogen gas 24 supplied into the hollow container 14 is removed by the PTFE filter 7 on the supply side breathing port 8a, and becomes a dry air stream or a nitrogen gas stream 25 to flow into the semiconductor wafer storage container 1 Internally, the flow of the chemical gas in the semiconductor wafer storage container 1 is removed, and moisture is removed to prevent the occurrence of acid on the surface of the semiconductor wafer.
另一方面，前述使用完畢乾空氣/氮氣體排出部12係於具備有排出噴嘴26的排出側之中空容器27的周壁，開有：將於前述半導體晶圓收納容器1內，除去化學氣體，並且除去水分，而阻止了半導體晶圓之酸的發生後之使用完畢乾空氣或氮氣體28予以排出之排出口29，並且前述排出噴嘴26的前端側形成為略圓錐狀，以使得能緊密地連結固定於設置在前述半導體晶圓收納容器1的底板5之排出側的呼吸口8b的PTFE過濾器7的下游側之開口部30。On the other hand, the dry air/nitrogen gas discharge unit 12 that has been used is attached to the peripheral wall of the hollow container 27 having the discharge side of the discharge nozzle 26, and the chemical vapor is removed from the semiconductor wafer storage container 1. Further, the water is removed, and the discharge port 29 from which the dry air or the nitrogen gas 28 is discharged after the occurrence of the acid of the semiconductor wafer is prevented, and the front end side of the discharge nozzle 26 is formed into a slightly conical shape so as to be closely arranged. The opening 30 on the downstream side of the PTFE filter 7 that is fixed to the breathing port 8b provided on the discharge side of the bottom plate 5 of the semiconductor wafer storage container 1 is connected.
於前述半導體晶圓收納容器1內，除去化學氣體，並且除去水分而阻止半導體晶圓表面之酸的發生後的使用完 畢乾空氣或氮氣體28，係經過排出側的呼吸口8b之PTFE過濾器7及排出噴嘴26而流入中空容器27內，之後，從排出口29而被排出外部。In the semiconductor wafer storage container 1, the chemical gas is removed, and moisture is removed to prevent the use of acid on the surface of the semiconductor wafer. The dry air or nitrogen gas 28 flows into the hollow container 27 through the PTFE filter 7 and the discharge nozzle 26 of the breathing port 8b on the discharge side, and then is discharged to the outside from the discharge port 29.
說明依據前述構成之本發明的實施例1中之乾空氣或氮氣體填充裝置A的作用。於具備有設置於收納半導體晶圓9的半導體晶圓收納容器1之底板5的PTFE過濾器7之供給側的呼吸口8a，緊密地連結固定構成前述填充裝置A的乾空氣、氮氣供給部11側之中空容器14的供給噴嘴13，並且於另一方側之呼吸口8b緊密地連結固定構成填充裝置A之使用完畢乾空氣/氮氣體排出部12側的中空容器27之排出噴嘴26。The action of the dry air or nitrogen gas filling device A in the first embodiment of the present invention constructed as described above will be explained. In the breathing port 8a provided on the supply side of the PTFE filter 7 provided on the bottom plate 5 of the semiconductor wafer storage container 1 in which the semiconductor wafer 9 is housed, the dry air and the nitrogen gas supply unit 11 constituting the filling device A are closely coupled and fixed. The supply nozzle 13 of the hollow container 14 on the side and the discharge port 8b on the other side are closely coupled to the discharge nozzle 26 of the hollow container 27 constituting the used dry air/nitrogen gas discharge portion 12 side of the filling device A.
於前述半導體晶圓收納容器1裝置完前述填充裝置A後，從未圖示出之乾空氣/氮氣體供給裝置介由乾空氣/氮氣體供給管16而對乾空氣、氮氣供給部11側之中空容器14供給乾空氣或氮氣體24時，被導入該中空容器14內的乾空氣或氮氣體24，係藉由通過供給側之呼吸口8a的PTFE過濾器7，除去該乾空氣或氮氣體24中的粉塵，成為乾空氣或氮氣體流25而流入半導體晶圓收納容器1內並混亂流動，除去半導體晶圓收納容器1內之化學氣體，並且除去水分，阻止半導體晶圓表面之酸的發生，可以阻止前述半導體晶圓9的腐蝕。After the semiconductor wafer storage container 1 is installed in the filling device A, the dry air/nitrogen gas supply device (not shown) is supplied to the dry air/nitrogen supply unit 11 via the dry air/nitrogen gas supply pipe 16. When the hollow container 14 supplies dry air or a nitrogen gas body 24, the dry air or nitrogen gas body 24 introduced into the hollow container 14 is removed by the PTFE filter 7 passing through the breathing port 8a on the supply side to remove the dry air or nitrogen gas. The dust in 24 becomes a dry air or nitrogen gas stream 25 and flows into the semiconductor wafer storage container 1 to flow in a chaotic manner, removes the chemical gas in the semiconductor wafer storage container 1, and removes moisture to prevent acid on the surface of the semiconductor wafer. Occurs to prevent corrosion of the aforementioned semiconductor wafer 9.
然後，除去前述半導體晶圓收納容器1內的化學氣體，並且除去水分而阻止半導體晶圓表面之酸的發生後之使用完畢氮氣體28，係經過排出側之呼吸口8h的PTFE 過濾器7及排出噴嘴26，流入中空容器27內，之後，從排出口29而被排出外部。Then, the chemical gas in the semiconductor wafer storage container 1 is removed, and the moisture is removed to prevent the use of the acid on the surface of the semiconductor wafer, and the nitrogen gas 28 is passed through the venting port 8h. The filter 7 and the discharge nozzle 26 flow into the hollow container 27, and are then discharged to the outside from the discharge port 29.
實施例2Example 2
將使用藉由前述構成所形成的乾空氣或氮氣體填充裝置當成本發明之實施例2，依據圖面詳細做說明。The dry air or nitrogen gas filling device formed by the above configuration will be used in the second embodiment of the invention, and will be described in detail based on the drawings.
第8圖係使用本發明乾空氣或氮氣體填充裝置之靜電除去裝置的平面圖，第9圖係表示將該靜電除去裝置安裝於第1、2圖所示之半導體晶圓收納容器的狀態之縱剖面圖。如第8、9圖所示般，除去半導體晶圓收納容器1內的半導體晶圓9所帶之靜電的靜電除去裝置B，係將前述乾空氣或氮氣體填充裝置A中之供給乾空氣或氮氣體之乾空氣、氮氣供給部11當成離子化乾空氣、離子化氮氣體供給部11a使用，並且，將該填充裝置A中之使用完畢乾空氣/氮氣體排出部12當成：藉由供給至前述半導體晶圓收納容器1內之離子化乾空氣或離子化氮氣體，除去該半導體晶圓收納容器1內中之化學氣體，並且除去水分，阻止半導體晶圓表面之酸的發生，進而除去半導體晶圓9的表面之靜電後的使用完畢離子化乾空氣或離子化氮氣體排出部12a使用，另一方面，進而於具備有構成前述填充裝置A之供給噴嘴13的供給側之中空容器14，連結將乾空氣或氮氣體24予以離子化之離子發生部31而形成。其他構成係與前述填充裝置A相同構成，使用同一符號來說明。Fig. 8 is a plan view showing a static electricity removing device using the dry air or nitrogen gas filling device of the present invention, and Fig. 9 is a view showing a state in which the static electricity removing device is attached to the semiconductor wafer storage container shown in Figs. 1 and 2; Sectional view. As shown in FIGS. 8 and 9, the static electricity removing device B that removes static electricity from the semiconductor wafer 9 in the semiconductor wafer storage container 1 is supplied with dry air or the dry air or nitrogen gas filling device A. The dry air of nitrogen gas and the nitrogen gas supply unit 11 are used as ionized dry air and ionized nitrogen gas supply unit 11a, and the used dry air/nitrogen gas discharge unit 12 in the filling device A is treated as follows: The ionized dry air or the ionized nitrogen gas in the semiconductor wafer storage container 1 removes chemical gas in the semiconductor wafer storage container 1 and removes moisture to prevent acid generation on the surface of the semiconductor wafer, thereby removing the semiconductor. After the static electricity on the surface of the wafer 9 is used, the ionized dry air or the ionized nitrogen gas discharge unit 12a is used, and the hollow container 14 including the supply side of the supply nozzle 13 constituting the filling device A is further provided. The ion generating portion 31 that ionizes the dry air or the nitrogen gas 24 is connected. The other configurations are the same as those of the above-described filling device A, and will be described using the same reference numerals.
前述供給側之中空容器14，為了能緊密地連結固定於設置在半導體晶圓收納容器1的底板5之供給側的呼吸口8a的PTFE過濾器7之上游側的開口部15，供給噴嘴13的前方側形成為略圓錐狀，並且，供給乾空氣或氮氣體24之乾空氣/氮氣體供給管16的下游側與該中空容器14的周壁連通而開口，且於該乾空氣/氮氣體供給管16的上游側之乾空氣/氮氣體供給口17附近安裝有開關閥18，藉由調整該開關閥18，來進行前述乾空氣或氮氣體之流量調整與送氣的停止及開始之控制。The supply container 13 is supplied to the nozzle 13 on the upstream side of the PTFE filter 7 that is fixed to the breathing port 8a provided on the supply side of the bottom plate 5 of the semiconductor wafer storage container 1 in a tight manner. The front side is formed in a slightly conical shape, and the downstream side of the dry air/nitrogen gas supply pipe 16 to which the dry air or the nitrogen gas body 24 is supplied communicates with the peripheral wall of the hollow container 14 to open, and the dry air/nitrogen gas supply pipe is opened. The on-off valve 18 is attached to the vicinity of the dry air/nitrogen gas supply port 17 on the upstream side of the 16 side, and by adjusting the on-off valve 18, the flow rate adjustment of the dry air or the nitrogen gas and the control of stopping and starting the air supply are performed.
進而，於前述開關閥18與中空容器14間之乾空氣/氮氣體供給管16設置有緩衝儲氣桶19，從未圖示出之乾空氣或氮氣體供給裝置經過乾空氣/氮氣體供給口17而被供給至乾空氣/氮氣體供給管16的乾空氣或氮氣體24，藉由被導入前述緩衝儲氣桶19，該乾空氣或氮氣體24之流速被均勻化，而被導入前述中空容器14內。Further, the dry air/nitrogen gas supply pipe 16 between the switching valve 18 and the hollow vessel 14 is provided with a buffer gas storage tank 19, and the dry air or nitrogen gas supply device (not shown) passes through the dry air/nitrogen gas supply port. The dry air or nitrogen gas 24 supplied to the dry air/nitrogen gas supply pipe 16 is introduced into the buffer gas storage tank 19, and the flow rate of the dry air or nitrogen gas 24 is uniformized, and is introduced into the hollow. Inside the container 14.
即緩衝儲氣桶19係有：如第5圖所示般，只具有中空室21之形式，如第6圖所示般，在中空室21內設置1個或具有間隔之複數個過濾器22，及如第7圖所示般，於中空室21內設置1個或具有間隔之複數個多孔板23之形式。That is, the buffer gas storage tank 19 is provided with only a hollow chamber 21 as shown in Fig. 5, and as shown in Fig. 6, one or a plurality of filters 22 having a space are provided in the hollow chamber 21. As shown in Fig. 7, one or a plurality of porous plates 23 having a space are provided in the hollow chamber 21.
如第6、7圖所示般，乾空氣或氮氣體24一通過設置於前述緩衝儲氣桶19的中空室21內之過濾器22或多孔板23時，與第5圖之沒有過濾器的形式相比，與流速成比例，壓力損失變大。利用此等過濾器22及多孔板23的 特性、以及緩衝儲氣桶19的特性，抑制從本發明之靜電除去裝置B對半導體晶圓收納容器1內之乾空氣或氮氣體24的初期流入速度，可以防止前述半導體晶圓收納容器1內之底部所有的粉塵之揚起。As shown in FIGS. 6 and 7, the dry air or nitrogen gas 24 passes through the filter 22 or the perforated plate 23 provided in the hollow chamber 21 of the buffer gas storage tank 19, and the filter without the filter of FIG. Compared with the form, the pressure loss becomes larger in proportion to the flow rate. Utilizing such filters 22 and perforated plates 23 The characteristics and the characteristics of the buffer cylinder 19 prevent the initial inflow velocity of the dry air or the nitrogen gas 24 in the semiconductor wafer storage container 1 from the static electricity removing device B of the present invention, thereby preventing the inside of the semiconductor wafer storage container 1 All the dust at the bottom rises.
另外，如使用前述第5圖所示之沒有過濾器形式的緩衝儲氣桶19時，與第6、7圖所示之緩衝儲氣桶19相比，針對初期之流入速度的抑制及粉塵之揚起防止，雖多少差些，但是在本發明中，也可以採用第5圖所示之緩衝儲氣桶19。Further, when the buffer air tank 19 having no filter type as shown in the above fifth embodiment is used, the initial inflow speed is suppressed and the dust is suppressed as compared with the buffer air tank 19 shown in Figs. Although the lifting prevention is somewhat inferior, in the present invention, the buffer gas storage tank 19 shown in Fig. 5 can also be used.
另外，於第10圖表示於將供給至前述中空容器14之乾空氣或氮氣體24予以離子化之離子發生部31，例如使用軟X射線管之離子化乾空氣、離子化氮氣體供給部11a。為了阻止介由窗101而從軟X射線管(離子發生部31)照射於中空容器14之軟X射線103的直進性，於與中空容器14的供給噴嘴13之間具備形成間隙104之軟X射線遮蔽片102。通過乾空氣/氮氣體供給管16所被供給之乾空氣或氮氣體24，係在中空容器14內介由窗101被照射軟X射線103而被離子化，成為+離子與-離子32，通過中空容器14的供給噴嘴13與軟X射線遮蔽片102之間隙104，從供給噴嘴13而作為離子化乾空氣或離子化氮氣體33而被噴出前述半導體晶圓收納容器1內。In addition, the ion generating unit 31 that ionizes the dry air or the nitrogen gas 24 supplied to the hollow container 14 is shown in Fig. 10, for example, ionized dry air using a soft X-ray tube, and ionized nitrogen gas supply unit 11a. . In order to prevent the straightness of the soft X-ray 103 irradiated from the soft X-ray tube (ion generating portion 31) to the hollow container 14 through the window 101, a soft X forming the gap 104 is provided between the supply nozzle 13 and the supply nozzle 13 of the hollow container 14. The ray shielding sheet 102. The dry air or nitrogen gas 24 supplied through the dry air/nitrogen gas supply pipe 16 is ionized by the soft X-ray 103 through the window 101 in the hollow container 14, and becomes + ions and - ions 32, passing through The gap 104 between the supply nozzle 13 of the hollow container 14 and the soft X-ray shielding sheet 102 is ejected from the supply nozzle 13 as ionized dry air or ionized nitrogen gas 33 into the semiconductor wafer storage container 1.
被供給至前述中空容器14內的乾空氣或氮氣體24，係藉由離子32而被離子化，並成為離子化乾空氣或離子化氮氣體33，藉由供給側之呼吸口8a的PTFE過濾器7 除去粉塵，成為離子化乾空氣流或離子化氮氣體流34流入半導體晶圓收納容器1內並混亂流動，在該半導體晶圓收納容器1內，除去化學氣體，並且除去半導體晶圓9所帶之靜電，進而，除去水分而阻止半導體晶圓表面之酸的發生。藉由使用前述PTFE過濾器7，抑制離子之喪失，進而除去粉塵，成為離子化乾空氣流或離子化氮氣體流34而流入半導體晶圓收納容器1內。The dry air or nitrogen gas 24 supplied into the hollow container 14 is ionized by the ions 32, and becomes ionized dry air or ionized nitrogen gas 33, which is filtered by the PTFE of the breathing port 8a on the supply side. 7 The dust is removed, and the ionized dry air stream or the ionized nitrogen gas stream 34 flows into the semiconductor wafer storage container 1 and flows in a chaotic manner. In the semiconductor wafer storage container 1, the chemical gas is removed, and the semiconductor wafer 9 is removed. The static electricity, in turn, removes moisture and prevents the formation of acid on the surface of the semiconductor wafer. By using the PTFE filter 7, the loss of ions is suppressed, and the dust is removed, and the ionized dry air stream or the ionized nitrogen gas stream 34 flows into the semiconductor wafer storage container 1.
另一方面，使用完畢離子化乾空氣或離子化氮氣體排出部12a係於具備排出噴嘴26之排出側的中空容器27的周壁，開有將：在前述半導體晶圓收納容器1內，除去化學氣體，並且除去所帶之靜電，進而除去水分，阻止半導體晶圓表面之酸的發生後之使用完畢離子化乾空氣或離子化氮氣體35予以排出之排出口29，並且，前述排出噴嘴26的前方側形成為略圓錐狀，以使得能夠緊密地連結固定於設置於前述半導體晶圓收納容器1的底板5之排出側的呼吸口8b之PTFE過濾器7的上游側之開口部30。On the other hand, the used ionized dry air or ionized nitrogen gas discharge unit 12a is attached to the peripheral wall of the hollow container 27 having the discharge side of the discharge nozzle 26, and is opened in the semiconductor wafer storage container 1 to remove the chemistry. a gas, and removing the static electricity, thereby removing moisture, preventing the use of ionized dry air or ionized nitrogen gas 35 to discharge the discharge port 29 after the occurrence of acid on the surface of the semiconductor wafer, and the discharge nozzle 26 The front side is formed in a substantially conical shape so that the opening 30 on the upstream side of the PTFE filter 7 fixed to the breathing port 8b provided on the discharge side of the bottom plate 5 of the semiconductor wafer storage container 1 can be closely coupled.
在前述半導體晶圓收納容器1內，除去化學氣體，並且除去所帶之靜電，進而除去水分，阻止半導體晶圓表面之酸的發生後之使用完畢離子化乾空氣或離子化氮氣體35，係經過排出側之呼吸口8b的PTFE過濾器7及排出噴嘴26而流入中空容器27內，之後，藉由排出口29而被排出外部。另外，於前述各呼吸口8中，雖然在供給側及排出側之任何一側都具備PTFE過濾器7，此係作成任何一個呼吸口8都可以當成供給側及排出側使用的關係。In the semiconductor wafer storage container 1, the chemical gas is removed, the static electricity is removed, and the water is removed to prevent the use of ionized dry air or ionized nitrogen gas 35 after the acid on the surface of the semiconductor wafer is removed. The PTFE filter 7 and the discharge nozzle 26 passing through the breathing port 8b on the discharge side flow into the hollow container 27, and then are discharged to the outside through the discharge port 29. Further, in each of the breathing ports 8, the PTFE filter 7 is provided on either of the supply side and the discharge side, and any of the breathing ports 8 can be used as the supply side and the discharge side.
說明藉由前述構成所形成之本發明的實施例2中之靜電除去裝置B的作用。於具備有設置於收納半導體晶圓9的半導體晶圓收納容器1之底板5的PTFE過濾器7之供給側的呼吸口8a，緊密地連結固定構成前述靜電除去裝置B的離子化乾空氣、離子化氮氣體供給部11a側之中空容器14的供給噴嘴13，並且於排出側之呼吸口8b緊密地連結固定構成靜電除去裝置B之使用完畢離子化乾空氣、離子化氮氣體排出部12a側的中空容器27之排出噴嘴26。The action of the static electricity removing device B in the second embodiment of the present invention formed by the above configuration will be described. In the breathing port 8a provided on the supply side of the PTFE filter 7 provided on the bottom plate 5 of the semiconductor wafer storage container 1 in which the semiconductor wafer 9 is housed, the ionized dry air and ions constituting the static electricity removing device B are closely coupled and fixed. The supply nozzle 13 of the hollow container 14 on the side of the nitrogen gas supply unit 11a, and the breathing port 8b on the discharge side are closely coupled and fixed to the ionized dry air and the ionized nitrogen gas discharge unit 12a side of the static electricity removing device B. The discharge nozzle 26 of the hollow container 27.
於前述半導體晶圓收納容器1裝置靜電除去裝置B後，將從未圖示出之乾空氣供給裝置來之乾空氣或氮氣體介由乾空氣/氮氣體供給管16而供給至離子化乾空氣、離子化氮氣體供給部11a側之中空容器14，並且，藉由離子發生部31一供給使前述中空容器14內的乾空氣離子化之例如軟X射線時，該中空容器14內的乾空氣或氮氣體被離子化，而成為離子化乾空氣或離子化氮氣體33，藉由通過供給側之呼吸口8a的PTFE過濾器7，抑制離子之喪失，並且，除去該離子化乾空氣或離子化氮氣體33中的粉塵，成為離子化乾空氣流或離子化氮氣體流34，流入半導體晶圓收納容器1內而混亂流動，除去化學氣體，並且除去半導體晶圓9所帶之靜電，進而藉由水分之除去，阻止半導體晶圓表面之酸的發生。After the semiconductor wafer storage container 1 is provided with the static electricity removing device B, dry air or nitrogen gas from a dry air supply device (not shown) is supplied to the ionized dry air via the dry air/nitrogen gas supply pipe 16. The hollow container 14 on the side of the ionized nitrogen gas supply unit 11a, and the dry air in the hollow container 14 when the ion generating unit 31 supplies the dry air in the hollow container 14 by soft X-rays, for example. Or the nitrogen gas is ionized to become ionized dry air or ionized nitrogen gas 33, and the loss of ions is suppressed by the PTFE filter 7 passing through the breathing port 8a on the supply side, and the ionized dry air or ions are removed. The dust in the nitrogen gas stream 33 becomes an ionized dry air stream or an ionized nitrogen gas stream 34, flows into the semiconductor wafer storage container 1 and flows in a chaotic manner, removes chemical gas, and removes static electricity from the semiconductor wafer 9, and further The removal of acid from the surface of the semiconductor wafer is prevented by the removal of moisture.
然後，除去前述半導體晶圓收納容器1內的化學氣體，並且除去半導體晶圓9所帶之靜電，進而藉由除去水 分，阻止半導體表面之酸的發生後之使用完畢離子化乾空氣或離子化氮氣體35，係經過排出側之呼吸口8b的PTFE過濾器7及排出噴嘴26，流入中空容器27內，之後，從排出口29被排出外部。Then, the chemical gas in the semiconductor wafer storage container 1 is removed, and the static electricity carried by the semiconductor wafer 9 is removed, thereby removing water. After the generation of the acid on the surface of the semiconductor is prevented, the ionized dry air or the ionized nitrogen gas 35 is passed through the PTFE filter 7 and the discharge nozzle 26 of the breathing port 8b on the discharge side, and flows into the hollow container 27, after that, The discharge port 29 is discharged to the outside.
進而，如前述般，為了防止對半導體晶圓收納容器1的底板5之粉塵的侵入，及抑制離子之喪失，設置有PTFE過濾器7。前述PTFE過濾器7係與以玻璃纖維為素材之玻璃纖維過濾器不同，而是將聚四酚乙烯薄膜予以延伸之極小的多孔質過濾器，且是作為過濾器使用者。並且，即使將前述玻璃纖維過濾器使用於本發明，離子化乾空氣或離子化氮氣體，藉由該玻璃纖維過濾器，離子喪失，本發明無法加以採用。Further, as described above, the PTFE filter 7 is provided in order to prevent the intrusion of dust into the bottom plate 5 of the semiconductor wafer storage container 1 and to suppress the loss of ions. The PTFE filter 7 is a filter that is a filter that is different from a glass fiber filter made of glass fiber, and which is a very small porous filter that extends a polytetrafluoroethylene film. Further, even if the glass fiber filter described above is used in the present invention, ionized dry air or ionized nitrogen gas, the ion loss is lost by the glass fiber filter, and the present invention cannot be employed.
另一方面，在本發明所使用的PTFE過濾器7，可以某種程度地抑制離子之喪失，並且將離子化乾空氣或離子化氮氣體24導入半導體晶圓收納容器1內。使用第11圖所示之裝置來進行其測試。On the other hand, in the PTFE filter 7 used in the present invention, ion loss can be suppressed to some extent, and ionized dry air or ionized nitrogen gas 24 can be introduced into the semiconductor wafer storage container 1. Use the device shown in Figure 11 for its testing.
即測試方法係藉由離子發生裝置來使發生離子，個別藉由除電時間測定器來測定無過濾器之情形的除電時間、PTFE過濾器通過後之除電時間、及玻璃纖維過濾器通過後之除電時間。That is, the test method is to generate ions by the ion generating device, and the static elimination time in the case of no filter, the static elimination time after the PTFE filter passes, and the static elimination after the glass fiber filter is passed by the static elimination time measuring device. time.
測定結果則如下述。The measurement results are as follows.
對離子發生裝置之供給空氣壓力：0.5MPaSupply air pressure to the ion generator: 0.5 MPa
(1)無過濾器時(1) When there is no filter
0.4秒(+帶電之除電時間值)0.4 seconds (+ dead time value)
0.5秒(-帶電之除電時間值)0.5 seconds (-charged power-off time value)
(2)PTFE過濾器通過後(2) After the PTFE filter is passed
1.9秒(+帶電之除電時間值)1.9 seconds (+ power-off time value)
4.7秒(-帶電之除電時間值)4.7 seconds (-charged power-off time value)
(3)玻璃纖維過濾器通過後(3) After the glass fiber filter passes
∞秒(+帶電之除電時間值)Leap second (+ charged de-energizing time value)
∞秒(-帶電之除電時間值)Leap second (-charged de-energizing time value)
由前述測定結果，如(1)般，在沒有過濾器之障礙物之情形時，當然藉由離子化乾空氣，短時間可被除電，但節使如(2)般，在有PTFE過濾器之障礙物時，雖某種程度除電率變差，但是可以驗證能夠除電。另外，如(3)般，如有玻璃纖維過濾器之障礙物時，驗證完全無法除電。即可以證明玻璃纖維過濾器使離子化乾空氣或離子化氮氣體的離子完全喪失。而且，依據前述驗證，PTFE過濾器可以某種程度地抑制離子化乾空氣或離子化氮氣體24的離子之喪失，知道可以導入半導體晶圓收納容器1內。From the foregoing measurement results, as in (1), in the absence of an obstacle of the filter, of course, by ionizing dry air, it can be removed in a short time, but the PTFE filter is provided as in (2). In the case of an obstacle, although the power removal rate is deteriorated to some extent, it can be verified that the power can be removed. In addition, as in (3), if there is an obstacle of the glass fiber filter, it is verified that the power cannot be removed at all. That is, it can be confirmed that the glass fiber filter completely loses ions of the ionized dry air or the ionized nitrogen gas. Further, according to the above verification, the PTFE filter can suppress the loss of ions of the ionized dry air or the ionized nitrogen gas 24 to some extent, and it can be known that it can be introduced into the semiconductor wafer storage container 1.
另外，如前述般，在將離子化乾空氣或離子化氮氣體33供給至半導體晶圓收納容器1內之情形時，供給開始時，半導體晶圓收納容器1內的壓力低，離子化乾空氣或離子化氮氣體33之對前述半導體晶圓收納容器1內的侵入風速快，會揚起滯留在該半導體晶圓收納容器1的底部之粉塵，而有附著於半導體晶圓9的表面。另外，離子化乾空氣或離子化氮氣體33之對半導體晶圓收納容器1內 的供給時間一經過時，該半導體晶圓收納容器1內的壓力上昇，該離子化乾空氣或離子化氮氣體33之對前述半導體晶圓收納容器1的侵入風速變慢，不會引起粉塵之揚起。In the case where ionized dry air or ionized nitrogen gas 33 is supplied into the semiconductor wafer storage container 1 as described above, the pressure in the semiconductor wafer storage container 1 is low at the start of supply, and ionized dry air is used. In addition, the intrusion wind speed in the semiconductor wafer storage container 1 in the ionized nitrogen gas body 33 is high, and dust adhering to the bottom of the semiconductor wafer storage container 1 is raised, and adheres to the surface of the semiconductor wafer 9. In addition, the ionized dry air or the ionized nitrogen gas 33 is in the pair of semiconductor wafer storage containers 1 When the supply time elapses, the pressure in the semiconductor wafer storage container 1 rises, and the intrusion wind speed of the ionized dry air or the ionized nitrogen gas 33 to the semiconductor wafer storage container 1 becomes slow, and dust is not caused. Raise.
由前述觀點而言，本發明係於靜電除去裝置B的乾空氣或氮氣體24之供給路徑的閥門20與中空容器14間之乾空氣/氮氣體供給管18設置緩衝儲氣桶21，使流入前述中空容器14之乾空氣或氮氣體24的流速均勻化。防止：此被均勻化之乾空氣或氮氣體24，以使流速均勻化後流入中空容器14內而被離子化，成為離子化乾空氣或離子化氮氣體33，作為離子化乾空氣流或離子化氮氣體流34而急遽地被供給至半導體晶圓收納容器1內，來防止將滯留在該半導體晶圓收納容器1內的底部之粉塵揚起。前述緩衝儲氣桶19之第5~7圖所示之作用，係與前述完全相同，省略其說明。From the above viewpoint, the present invention is provided in the dry air/nitrogen gas supply pipe 18 between the valve 20 of the supply path of the dry air or the nitrogen gas body 24 of the static electricity removing device B and the hollow container 14, and the buffer gas storage tank 21 is provided to allow the inflow. The flow rate of the dry air or nitrogen gas 24 of the hollow container 14 is uniformized. Preventing: the homogenized dry air or nitrogen gas 24 is equalized and then flows into the hollow vessel 14 to be ionized to become ionized dry air or ionized nitrogen gas 33 as an ionized dry air stream or ion. The nitrogen gas stream 34 is supplied to the semiconductor wafer storage container 1 in an imminent manner to prevent the dust accumulated in the bottom portion of the semiconductor wafer storage container 1 from rising. The actions shown in the fifth to seventh embodiments of the buffer gas storage tank 19 are completely the same as those described above, and the description thereof will be omitted.
1‧‧‧半導體晶圓收納容器1‧‧‧Semiconductor wafer storage container
2‧‧‧蓋用凸緣2‧‧‧Filling flange
3‧‧‧蓋子3‧‧‧ cover
4‧‧‧吊起用鉤4‧‧‧ lifting hook
5‧‧‧底板5‧‧‧floor
6‧‧‧腳6‧‧‧ feet
7‧‧‧PTFE過濾器7‧‧‧PTFE filter
8‧‧‧呼吸口8‧‧‧ breathing mouth
9‧‧‧半導體晶圓9‧‧‧Semiconductor wafer
11‧‧‧乾空氣/氮氣體供給部11‧‧‧Dry air/nitrogen supply unit
12‧‧‧使用完畢乾空氣/氮氣體排出部12‧‧‧Used dry air/nitrogen gas discharge
13‧‧‧供給噴嘴13‧‧‧Supply nozzle
14‧‧‧中空容器14‧‧‧ hollow container
15‧‧‧開口部15‧‧‧ openings
16‧‧‧乾空氣/氮氣體供給閥16‧‧‧Dry air/nitrogen supply valve
17‧‧‧乾空氣/氮氣體供給口17‧‧‧dry air/nitrogen supply port
18‧‧‧開關閥18‧‧‧ switch valve
19‧‧‧緩衝儲氣桶19‧‧‧Buffered gas storage tank
21‧‧‧中空室21‧‧‧ hollow room
22‧‧‧過濾器22‧‧‧Filter
23‧‧‧多孔板23‧‧‧Perforated plate
24‧‧‧乾空氣或氮氣體24‧‧‧dry air or nitrogen gas
25‧‧‧乾空氣流或氮氣體流25‧‧‧dry air or nitrogen flow
26‧‧‧排出噴嘴26‧‧‧ discharge nozzle
27‧‧‧中空容器27‧‧‧ hollow container
28‧‧‧使用完畢乾空氣或氮氣體28‧‧‧Used dry air or nitrogen gas
第1圖係本發明半導體晶圓收納容器內之乾空氣或氮氣體填充裝置所使用之半導體晶圓收納容器的縱剖面圖。Fig. 1 is a longitudinal sectional view showing a semiconductor wafer storage container used in a dry air or nitrogen gas filling apparatus in a semiconductor wafer storage container of the present invention.
第2圖係其底面圖。Figure 2 is a bottom view of the same.
第3圖係本發明半導體晶圓收納容器內之乾空氣或氮氣體填充裝置的平面圖。Fig. 3 is a plan view showing a dry air or nitrogen gas filling device in the semiconductor wafer container of the present invention.
第4圖係將本發明半導體晶圓收納容器內之乾空氣或氮氣體填充裝置安裝於半導體晶圓收納容器之縱剖面圖。Fig. 4 is a longitudinal sectional view showing a state in which a dry air or a nitrogen gas filling device in the semiconductor wafer storage container of the present invention is mounted on a semiconductor wafer storage container.
第5圖係本發明半導體晶圓收納容器內之乾空氣或氮氣體填充裝置所使用之緩衝儲氣桶的一部份切開斜視圖。Fig. 5 is a partially cutaway perspective view showing a buffer gas storage tank used in a dry air or nitrogen gas filling device in the semiconductor wafer storage container of the present invention.
第6圖係表示本發明半導體晶圓收納容器內之乾空氣或氮氣體填充裝置所使用之緩衝儲氣桶的其他實施例之一部份切開斜視圖。Fig. 6 is a partially cutaway perspective view showing another embodiment of a buffer gas storage tank used in a dry air or nitrogen gas filling device in the semiconductor wafer container of the present invention.
第7圖係表示本發明半導體晶圓收納容器內之乾空氣或氮氣體填充裝置所使用之緩衝儲氣桶的進一步其他實施例之一部份切開斜視圖。Fig. 7 is a partially cutaway perspective view showing still another embodiment of a buffer gas storage tank used in a dry air or nitrogen gas filling device in the semiconductor wafer container of the present invention.
第8圖係使用本發明半導體晶圓收納容器內之乾空氣或氮氣體填充裝置之靜電除去裝置的平面圖。Fig. 8 is a plan view showing an electrostatic discharge device using a dry air or nitrogen gas filling device in the semiconductor wafer container of the present invention.
第9圖係將使用本發明半導體晶圓收納容器內之乾空氣或氮氣體填充裝置之靜電除去裝置安裝於半導體晶圓收納容器之半導體晶圓收納容器的縱剖面圖。Fig. 9 is a longitudinal sectional view showing a semiconductor wafer storage container in which a static electricity removing device using a dry air or a nitrogen gas filling device in the semiconductor wafer storage container of the present invention is mounted on a semiconductor wafer storage container.
第10圖係表示於使用本發明半導體晶圓收納容器內之乾空氣或氮氣體填充裝置之靜電除去裝置中之離子化乾空氣、離子化氮氣體供給部使用軟X射線管之例子的重要部位之縱剖面圖。Fig. 10 is a view showing an important part of an example in which an ionizing dry air or an ionized nitrogen gas supply unit using a soft X-ray tube is used in the static electricity removing apparatus using the dry air or nitrogen gas filling apparatus in the semiconductor wafer storage container of the present invention. Longitudinal section view.
第11圖係在本發明中，針對過濾器之離子喪失測試裝置之概略說明圖。Fig. 11 is a schematic explanatory view of an ion loss test device for a filter in the present invention.
1‧‧‧半導體晶圓收納容器1‧‧‧Semiconductor wafer storage container
4‧‧‧吊起用鉤4‧‧‧ lifting hook
5‧‧‧底板5‧‧‧floor
6‧‧‧腳6‧‧‧ feet
7‧‧‧PTFE過濾器7‧‧‧PTFE filter
8a‧‧‧供給側之呼吸口8a‧‧‧Supply side breathing
8b‧‧‧排出側之呼吸口8b‧‧‧ Breathing port on the discharge side
9‧‧‧半導體晶圓9‧‧‧Semiconductor wafer
11‧‧‧乾空氣/氮氣體供給部11‧‧‧Dry air/nitrogen supply unit
12‧‧‧使用完畢乾空氣/氮氣體排出部12‧‧‧Used dry air/nitrogen gas discharge
13‧‧‧供給噴嘴13‧‧‧Supply nozzle
14‧‧‧中空容器14‧‧‧ hollow container
15‧‧‧開口部15‧‧‧ openings
16‧‧‧乾空氣/氮氣體供給管16‧‧‧dry air/nitrogen supply pipe
24‧‧‧乾空氣或氮氣體24‧‧‧dry air or nitrogen gas
25‧‧‧乾空氣流或氮氣體流25‧‧‧dry air or nitrogen flow
26‧‧‧排出噴嘴26‧‧‧ discharge nozzle
27‧‧‧中空容器27‧‧‧ hollow container
28‧‧‧使用完畢乾空氣或氮氣體28‧‧‧Used dry air or nitrogen gas
29‧‧‧排出口29‧‧‧Export
30‧‧‧開口部30‧‧‧ openings
A‧‧‧乾空氣或氮氣體填充裝置A‧‧‧dry air or nitrogen filling device
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW096125425A TWI452646B (en) | 2007-07-12 | 2007-07-12 | A dry air or a nitrogen gas filling device in a semiconductor wafer storage container, and a wafer electrostatic removing device using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW096125425A TWI452646B (en) | 2007-07-12 | 2007-07-12 | A dry air or a nitrogen gas filling device in a semiconductor wafer storage container, and a wafer electrostatic removing device using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200903689A TW200903689A (en) | 2009-01-16 |
| TWI452646B true TWI452646B (en) | 2014-09-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096125425A TWI452646B (en) | 2007-07-12 | 2007-07-12 | A dry air or a nitrogen gas filling device in a semiconductor wafer storage container, and a wafer electrostatic removing device using the same |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI452646B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5295808B2 (en) * | 2009-02-09 | 2013-09-18 | 東京エレクトロン株式会社 | Particle adhesion prevention method and substrate transport method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200620459A (en) * | 2004-07-09 | 2006-06-16 | Sekisui Chemical Co Ltd | Method and device for treating outer periphery of base material |
| TW200624181A (en) * | 2004-10-07 | 2006-07-16 | Tokyo Electron Ltd | Coating film forming apparatus and coating film forming method |
-
2007
- 2007-07-12 TW TW096125425A patent/TWI452646B/en active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200620459A (en) * | 2004-07-09 | 2006-06-16 | Sekisui Chemical Co Ltd | Method and device for treating outer periphery of base material |
| TW200624181A (en) * | 2004-10-07 | 2006-07-16 | Tokyo Electron Ltd | Coating film forming apparatus and coating film forming method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200903689A (en) | 2009-01-16 |
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