TW200735428A - Electronic element, current control device, arithmetic device, and display device - Google Patents

Electronic element, current control device, arithmetic device, and display device

Info

Publication number
TW200735428A
TW200735428A TW096101824A TW96101824A TW200735428A TW 200735428 A TW200735428 A TW 200735428A TW 096101824 A TW096101824 A TW 096101824A TW 96101824 A TW96101824 A TW 96101824A TW 200735428 A TW200735428 A TW 200735428A
Authority
TW
Taiwan
Prior art keywords
electrode layer
electronic element
current control
arithmetic
display device
Prior art date
Application number
TW096101824A
Other languages
English (en)
Inventor
Hiroshi Kondo
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Publication of TW200735428A publication Critical patent/TW200735428A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H10K10/482—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors the IGFET comprising multiple separately-addressable gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
TW096101824A 2006-01-24 2007-01-17 Electronic element, current control device, arithmetic device, and display device TW200735428A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006014996 2006-01-24
JP2006132706 2006-05-11
JP2006212249 2006-08-03

Publications (1)

Publication Number Publication Date
TW200735428A true TW200735428A (en) 2007-09-16

Family

ID=38309036

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096101824A TW200735428A (en) 2006-01-24 2007-01-17 Electronic element, current control device, arithmetic device, and display device

Country Status (5)

Country Link
US (1) US8576211B2 (zh)
EP (1) EP1974390B1 (zh)
KR (1) KR101018764B1 (zh)
TW (1) TW200735428A (zh)
WO (1) WO2007086237A1 (zh)

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US8853820B2 (en) 2009-05-25 2014-10-07 Basf Se Crosslinkable dielectrics and methods of preparation and use thereof
KR20120076060A (ko) * 2010-12-29 2012-07-09 삼성모바일디스플레이주식회사 전기영동 표시 장치 및 그 구동 방법
US9099437B2 (en) * 2011-03-08 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8592909B2 (en) 2011-08-26 2013-11-26 Eastman Kodak Company Transistor including single layer reentrant profile
US8803227B2 (en) * 2011-09-29 2014-08-12 Eastman Kodak Company Vertical transistor having reduced parasitic capacitance
US8698230B2 (en) 2012-02-22 2014-04-15 Eastman Kodak Company Circuit including vertical transistors with a conductive stack having reentrant profile
US8633068B2 (en) 2012-02-22 2014-01-21 Eastman Kodak Company Vertical transistor actuation
US9142647B1 (en) 2014-03-06 2015-09-22 Eastman Kodak Company VTFT formation using selective area deposition
US9093470B1 (en) 2014-03-06 2015-07-28 Eastman Kodak Company VTFT formation using capillary action
US9123815B1 (en) * 2014-03-06 2015-09-01 Eastman Kodak Company VTFTs including offset electrodes
US9331205B2 (en) * 2014-03-06 2016-05-03 Eastman Kodak Company VTFT with post, cap, and aligned gate
US9214560B2 (en) * 2014-03-06 2015-12-15 Eastman Kodak Company VTFT including overlapping electrodes
EP3114710A1 (en) * 2014-03-06 2017-01-11 Eastman Kodak Company Vtft with polymer core
EP3127881A4 (en) 2014-03-31 2018-01-10 Sekisui Chemical Co., Ltd. Intermediate film for laminated glass, method for manufacturing intermediate film for laminated glass, and laminated glass
US9443887B1 (en) * 2015-06-12 2016-09-13 Eastman Kodak Company Vertical and planar TFTS on common substrate
TWI685113B (zh) 2015-02-11 2020-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法

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JP3978754B2 (ja) 1997-12-29 2007-09-19 チッソ株式会社 ポリアミド酸組成物、液晶配向膜、及び液晶表示素子
JP3978755B2 (ja) 1997-12-29 2007-09-19 チッソ株式会社 ポリアミド酸組成物、液晶配向膜、および液晶表示素子
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JP3689656B2 (ja) * 2000-09-14 2005-08-31 キヤノン株式会社 電子放出素子及び電子源及び画像形成装置
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KR100714513B1 (ko) * 2001-09-07 2007-05-07 마츠시타 덴끼 산교 가부시키가이샤 Ｅｌ 표시 장치, 전자 표시 기기 및 ｅｌ 표시 장치의 구동 회로
JP4894120B2 (ja) 2001-09-27 2012-03-14 Ｊｎｃ株式会社 フェニレンジアミン誘導体、液晶配向膜および液晶表示素子
JP2003110110A (ja) 2001-09-28 2003-04-11 Ricoh Co Ltd 半導体装置及びその製造方法
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JP4753277B2 (ja) 2004-07-02 2011-08-24 グローリー株式会社 遊技媒体貸出システム
JP2006132706A (ja) 2004-11-08 2006-05-25 Toyota Industries Corp 油圧システムの冷却装置
JP5209844B2 (ja) * 2004-11-30 2013-06-12 株式会社リコー 電子素子及びその製造方法、演算素子並びに表示素子
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JP3748880B1 (ja) 2005-02-04 2006-02-22 有限会社 Ｍ＆Ｋケネス 頭髪用の剃刀の刃体及び頭髪用の剃刀

Also Published As

Publication number Publication date
KR20080087014A (ko) 2008-09-29
KR101018764B1 (ko) 2011-03-07
US20100164918A1 (en) 2010-07-01
US8576211B2 (en) 2013-11-05
EP1974390B1 (en) 2013-02-27
EP1974390A4 (en) 2011-04-06
WO2007086237A1 (en) 2007-08-02
EP1974390A1 (en) 2008-10-01

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