TW200637937A - The manufacturing method for the silicon wafer - Google Patents

The manufacturing method for the silicon wafer

Info

Publication number
TW200637937A
TW200637937A TW095105393A TW95105393A TW200637937A TW 200637937 A TW200637937 A TW 200637937A TW 095105393 A TW095105393 A TW 095105393A TW 95105393 A TW95105393 A TW 95105393A TW 200637937 A TW200637937 A TW 200637937A
Authority
TW
Taiwan
Prior art keywords
single crystal
silicon single
manufacturing
silicon wafer
cylindrical part
Prior art date
Application number
TW095105393A
Other languages
English (en)
Other versions
TWI316566B (zh
Inventor
Hidetoshi Kuroki
Motoaki Yoshinaga
Hiroshi Shiraishi
Masahiro Shibata
Original Assignee
Komatsu Denshi Kinzoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Publication of TW200637937A publication Critical patent/TW200637937A/zh
Application granted granted Critical
Publication of TWI316566B publication Critical patent/TWI316566B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW095105393A 2005-04-26 2006-02-17 The manufacturing method for the silicon wafer TW200637937A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005128483A JP4791073B2 (ja) 2005-04-26 2005-04-26 シリコンウェーハの製造方法

Publications (2)

Publication Number Publication Date
TW200637937A true TW200637937A (en) 2006-11-01
TWI316566B TWI316566B (zh) 2009-11-01

Family

ID=37307744

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095105393A TW200637937A (en) 2005-04-26 2006-02-17 The manufacturing method for the silicon wafer

Country Status (5)

Country Link
US (1) US8864906B2 (zh)
JP (1) JP4791073B2 (zh)
DE (1) DE112006001092B4 (zh)
TW (1) TW200637937A (zh)
WO (1) WO2006117939A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008189529A (ja) * 2007-02-06 2008-08-21 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶の製造方法
JP2010275137A (ja) * 2009-05-27 2010-12-09 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法
JP5781303B2 (ja) * 2010-12-31 2015-09-16 株式会社Sumco シリカガラスルツボ製造方法およびシリカガラスルツボ製造装置
JP5954247B2 (ja) * 2013-04-30 2016-07-20 信越半導体株式会社 シリコン単結晶の製造方法
JP5921498B2 (ja) * 2013-07-12 2016-05-24 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶の製造方法
JP6052189B2 (ja) * 2014-01-16 2016-12-27 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
JP6070626B2 (ja) * 2014-05-12 2017-02-01 信越半導体株式会社 シリコン単結晶の育成方法
DE102014107590B3 (de) * 2014-05-28 2015-10-01 Infineon Technologies Ag Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers
JP6458551B2 (ja) * 2015-02-25 2019-01-30 株式会社Sumco シリコンウェーハの良否判定方法、該方法を用いたシリコンウェーハの製造方法およびシリコンウェーハ
EP3384072B1 (en) 2015-12-04 2021-02-17 Globalwafers Co., Ltd. Systems and methods for production of low oxygen content silicon
JP6786905B2 (ja) 2016-06-27 2020-11-18 株式会社Sumco シリコン単結晶の製造方法
US20180030615A1 (en) * 2016-07-28 2018-02-01 Sunedison Semiconductor Limited (Uen201334164H) Methods for producing single crystal silicon ingots with reduced seed end oxygen
JP7218708B2 (ja) * 2019-10-29 2023-02-07 株式会社Sumco 点欠陥シミュレーター、点欠陥シミュレーションプログラム、点欠陥シミュレーション方法、シリコン単結晶の製造方法および単結晶引き上げ装置
JP7370879B2 (ja) * 2020-01-22 2023-10-30 株式会社ディスコ ウエーハ生成方法、及びウエーハ生成装置
JP2021127278A (ja) * 2020-02-14 2021-09-02 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2813592B2 (ja) 1989-09-29 1998-10-22 住友シチックス株式会社 単結晶製造方法
JP3085146B2 (ja) 1995-05-31 2000-09-04 住友金属工業株式会社 シリコン単結晶ウェーハおよびその製造方法
JPH10291892A (ja) * 1997-04-22 1998-11-04 Komatsu Electron Metals Co Ltd 結晶中の不純物濃度検出方法および単結晶の製造方法並びに単結晶引上げ装置
JP3400312B2 (ja) * 1997-09-05 2003-04-28 株式会社スーパーシリコン研究所 単結晶引上げ装置及び単結晶引上げ方法
JPH11180793A (ja) 1997-12-18 1999-07-06 Sumitomo Sitix Corp 単結晶の引上速度制御方法
JP3955375B2 (ja) * 1998-01-19 2007-08-08 信越半導体株式会社 シリコン単結晶の製造方法およびシリコン単結晶ウエーハ
JP4013324B2 (ja) * 1998-03-31 2007-11-28 株式会社Ｓｕｍｃｏ 単結晶成長方法
JPH11349394A (ja) * 1998-06-04 1999-12-21 Shin Etsu Handotai Co Ltd 窒素ドープした低欠陥シリコン単結晶ウエーハおよびその製造方法
EP1152074A4 (en) * 1999-11-11 2007-04-04 Shinetsu Handotai Kk MONOCRYSTALLINE SILICON SINK AND METHOD OF MAKING SAME
EP1193333A4 (en) * 2000-02-28 2006-10-04 Shinetsu Handotai Kk METHOD FOR PRODUCING SILICON CRYSTALS AND SILICON CRYSTAL
DE10025870A1 (de) 2000-05-25 2001-12-06 Wacker Siltronic Halbleitermat Einkristallstab und Verfahren zur Herstellung desselben
JP2002137988A (ja) * 2000-10-31 2002-05-14 Super Silicon Kenkyusho:Kk 単結晶引上げ方法
JP2002226295A (ja) * 2001-01-31 2002-08-14 Shin Etsu Handotai Co Ltd チョクラルスキー法によるシリコン単結晶製造工程の管理方法及びチョクラルスキー法による高抵抗シリコン単結晶の製造方法並びにシリコン単結晶
JP2007045662A (ja) * 2005-08-10 2007-02-22 Sumco Corp 半導体シリコンウェーハおよびその製造方法

Also Published As

Publication number Publication date
US8864906B2 (en) 2014-10-21
TWI316566B (zh) 2009-11-01
JP4791073B2 (ja) 2011-10-12
WO2006117939A1 (ja) 2006-11-09
JP2006306640A (ja) 2006-11-09
DE112006001092B4 (de) 2020-01-16
DE112006001092T5 (de) 2008-05-21
US20090301385A1 (en) 2009-12-10

Similar Documents

Publication Publication Date Title
TW200637937A (en) The manufacturing method for the silicon wafer
ATE493755T1 (de) Siliciumwafer und herstellungsverfahren dafür
TW200600620A (en) Semiconductor substrate and semiconductor device, and manufacturing methods thereof
TW200613588A (en) Silicon wafer, method for manufacturing the same, and method for growing silicon single crystal
WO2009025337A1 (ja) Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法、ｉｇｂｔ用シリコン単結晶ウェーハの抵抗率保証方法
SG170005A1 (en) Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt
TW200733254A (en) Device fabrication by anisotropic wet etch
EP2169708A3 (en) Silicon wafer and fabrication method thereof
WO2009025336A1 (ja) Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
TW200736423A (en) Silicon wafer and method for producing same
WO2007124415A3 (en) Crystallographic preferential etch to define a recessed-region for epitaxial growth
MY147106A (en) Method for manufacturing epitaxial wafer
WO2006009881A3 (en) Process and apparatus for forming nanoparticles using radiofrequency plasmas
TW200802933A (en) Semiconductor emitting device substrate and method of fabricating the same
SG162693A1 (en) Silicon wafer and method of manufacturing the same
SG133504A1 (en) Annealed wafer and manufacturing method of annealed wafer
TW200636098A (en) Method for growing silicon single crystal, and silicon wafer and SOI substrate using the same
TW200641192A (en) Semiconductor layer structure and process for producing a semiconductor layer structure
TWI256076B (en) Control of thermal donor formation in high resistivity CZ silicon
TW200700596A (en) Low basal plane dislocation bulk grown SIC wafers
TW200618068A (en) Strained semiconductor devices and method for forming at least a portion thereof
TW200636099A (en) Method for manufacturing silicon single crystal, and silicon wafer
WO2002015284A8 (fr) Cellule solaire et son procede de fabrication
NO20080964L (no) Uttrekkingsanordning for bruk nar uttrekking av et keramisk skumfilter
EP2565301A4 (en) SILICON CARBIDE CRYSTAL AND METHOD FOR MANUFACTURING SILICON CARBIDE CRYSTAL