TW200600620A - Semiconductor substrate and semiconductor device, and manufacturing methods thereof - Google Patents

Semiconductor substrate and semiconductor device, and manufacturing methods thereof

Info

Publication number
TW200600620A
TW200600620A TW094114614A TW94114614A TW200600620A TW 200600620 A TW200600620 A TW 200600620A TW 094114614 A TW094114614 A TW 094114614A TW 94114614 A TW94114614 A TW 94114614A TW 200600620 A TW200600620 A TW 200600620A
Authority
TW
Taiwan
Prior art keywords
semiconductor substrate
silicon substrate
semiconductor
manufacturing methods
atoms
Prior art date
Application number
TW094114614A
Other languages
Chinese (zh)
Inventor
Hiromichi Kinpara
Tetsuya Kanata
Shinsuke Sadamitsu
Koji Kato
Original Assignee
Toyota Motor Co Ltd
Sumitomo Mitsubishi Silicon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Co Ltd, Sumitomo Mitsubishi Silicon filed Critical Toyota Motor Co Ltd
Publication of TW200600620A publication Critical patent/TW200600620A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

An object is to provide a semiconductor substrate having a large diameter, high mechanical strength and less crystal defects; and a semiconductor device making use of the semiconductor substrate; and manufacturing methods of them. The semiconductor substrate 100 has an N- type silicon substrate 10 formed by the MCZ method and an N- type epitaxial layer 11 formed over the silicon substrate 10 by the epitaxial growth. The silicon substrate 10 has a dopant concentration within a range of from 1.0 x 10<SP>13</SP> atoms/cm<SP>3</SP> to 1.0 x 10<SP>15</SP> atoms/cm<SP>3</SP>. The oxygen concentration in the silicon substrate 10 is 8.0 x 10<SP>17</SP> atoms/cm<SP>3</SP> or less.
TW094114614A 2004-05-07 2005-05-04 Semiconductor substrate and semiconductor device, and manufacturing methods thereof TW200600620A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004138168A JP2005322712A (en) 2004-05-07 2004-05-07 Semiconductor substrate, semiconductor device, and their manufacturing method

Publications (1)

Publication Number Publication Date
TW200600620A true TW200600620A (en) 2006-01-01

Family

ID=34966375

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094114614A TW200600620A (en) 2004-05-07 2005-05-04 Semiconductor substrate and semiconductor device, and manufacturing methods thereof

Country Status (3)

Country Link
JP (1) JP2005322712A (en)
TW (1) TW200600620A (en)
WO (1) WO2005108656A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI555202B (en) * 2014-07-11 2016-10-21 新唐科技股份有限公司 Igbt and manufacturing method thereof

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5188673B2 (en) * 2005-06-09 2013-04-24 株式会社Ｓｕｍｃｏ Silicon wafer for IGBT and method for manufacturing the same
JP4631717B2 (en) * 2006-01-19 2011-02-16 株式会社Ｓｕｍｃｏ Silicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT
JP4760729B2 (en) 2006-02-21 2011-08-31 株式会社Ｓｕｍｃｏ Silicon single crystal wafer for IGBT and manufacturing method of silicon single crystal wafer for IGBT
JP4989797B2 (en) * 2006-03-30 2012-08-01 新電元工業株式会社 Manufacturing method of IGBT
JP5396689B2 (en) * 2006-09-07 2014-01-22 富士電機株式会社 Semiconductor device and manufacturing method thereof
JP4561734B2 (en) * 2006-12-13 2010-10-13 株式会社日立製作所 Semiconductor device and plasma display device using the same
JP2010010401A (en) * 2008-06-27 2010-01-14 Hitachi Ltd Horizontal igbt and motor controller using the same
JP5636183B2 (en) * 2009-11-11 2014-12-03 コバレントマテリアル株式会社 Compound semiconductor substrate
KR101799258B1 (en) 2012-10-02 2017-11-20 미쓰비시덴키 가부시키가이샤 Semiconductor device and method for manufacturing semiconductor device
DE102014106594B4 (en) * 2014-05-09 2022-05-05 Infineon Technologies Ag Process for manufacturing a semiconductor device
EP3113224B1 (en) 2015-06-12 2020-07-08 Canon Kabushiki Kaisha Imaging apparatus, method of manufacturing the same, and camera
WO2016204227A1 (en) 2015-06-17 2016-12-22 富士電機株式会社 Semiconductor device and method of manufacturing semiconductor device
JP2017098318A (en) * 2015-11-19 2017-06-01 三菱電機株式会社 Semiconductor device and manufacturing method of the same
JP6558462B2 (en) * 2018-03-22 2019-08-14 三菱電機株式会社 Semiconductor device
JP7331520B2 (en) * 2019-07-23 2023-08-23 株式会社Sumco Epitaxial silicon wafer manufacturing method, epitaxial silicon wafer, silicon wafer manufacturing method, and semiconductor device manufacturing method
JP7363336B2 (en) * 2019-10-11 2023-10-18 富士電機株式会社 Semiconductor device and semiconductor device manufacturing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2688137B2 (en) * 1991-12-04 1997-12-08 信越半導体株式会社 Method of pulling silicon single crystal
JPH07267776A (en) * 1994-03-31 1995-10-17 Sumitomo Sitix Corp Growth method of single crystal
JP3533783B2 (en) * 1995-10-18 2004-05-31 ソニー株式会社 Semiconductor substrate and semiconductor device manufacturing method
US6565652B1 (en) * 2001-12-06 2003-05-20 Seh America, Inc. High resistivity silicon wafer and method of producing same using the magnetic field Czochralski method
JP4032342B2 (en) * 2002-03-27 2008-01-16 株式会社Ｓｕｍｃｏ Manufacturing method of semiconductor silicon substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI555202B (en) * 2014-07-11 2016-10-21 新唐科技股份有限公司 Igbt and manufacturing method thereof

Also Published As

Publication number Publication date
JP2005322712A (en) 2005-11-17
WO2005108656A1 (en) 2005-11-17

Similar Documents

Publication Publication Date Title
TW200600620A (en) Semiconductor substrate and semiconductor device, and manufacturing methods thereof
TW200614379A (en) Silicon epitaxial wafer and manufacturing method for same
JP2008528420A5 (en)
TW200641192A (en) Semiconductor layer structure and process for producing a semiconductor layer structure
ATE493755T1 (en) SILICON WAFER AND PRODUCTION PROCESS THEREOF
TWI265984B (en) Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same
TWI263709B (en) Structure of strain relaxed thin Si/Ge epitaxial layer and fabricating method thereof
TW200633022A (en) Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device
SG170005A1 (en) Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt
TW200631101A (en) Method for heat treatment of silicon wafers
EP2169708A3 (en) Silicon wafer and fabrication method thereof
TW200506117A (en) Semi-insulating GaN and method of making the same
TW200746430A (en) Method of manufacturing semiconductor device, and semiconductor device
EP1705698A3 (en) Method of fabricating strained silicon on an SOI substrate
EP1688991A3 (en) SOI wafer production method
TW200728523A (en) Epitaxial wafer and method for production of epitaxial wafer
EP1041621A3 (en) Multilayered wafer with thrick sacrificial layer using porous silicon or porous silicon oxide and fabrication method thereof
EP2110466A3 (en) Silicon single crystal manufacturing method and silicon wafer
WO2009025337A1 (en) Silicon single crystal wafer for igbt, process for producing silicon single crystal wafer for igbt, and method for ensuring electric resistivity of silicon single crystal wafer for igbt
TW200703716A (en) Nitride semiconductor element and its fabrication process
TW200715617A (en) Semiconductor element and its fabrication method
TW200601419A (en) Compressive SiGe &lt;110&gt; growth and structure of MOSFET devices
TWI267144B (en) Method of producing SIMOX substrate and the substrate produced thereby
TW200725742A (en) Annealed wafer and manufacturing method of annealed wafer
WO2002015284A8 (en) Method for manufacturing solar cell and solar cell