TW200629490A - Semiconductor device, method of manufacturing the same, capacitor structure, and method of manufacturing the same - Google Patents

Semiconductor device, method of manufacturing the same, capacitor structure, and method of manufacturing the same

Info

Publication number
TW200629490A
TW200629490A TW094137598A TW94137598A TW200629490A TW 200629490 A TW200629490 A TW 200629490A TW 094137598 A TW094137598 A TW 094137598A TW 94137598 A TW94137598 A TW 94137598A TW 200629490 A TW200629490 A TW 200629490A
Authority
TW
Taiwan
Prior art keywords
main surface
manufacturing
same
substrate
vias
Prior art date
Application number
TW094137598A
Other languages
Chinese (zh)
Other versions
TWI292944B (en
Inventor
Kazuaki Kurihara
Takeshi Shioga
John D Baniecki
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of TW200629490A publication Critical patent/TW200629490A/en
Application granted granted Critical
Publication of TWI292944B publication Critical patent/TWI292944B/en

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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
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Abstract

A semiconductor device is disclosed that includes an interposer and a semiconductor chip. The interposer includes a Si substrate; multiple through vias provided through an insulating material in corresponding through holes passing through the Si substrate; a thin film capacitor provided on a first main surface of the Si substrate so as to be electrically connected to the through vias; and multiple external connection terminals provided on a second main surface of the Si substrate so as to be electrically connected to the through vias. The second main surface faces away from the first main surface. The semiconductor chip is provided on one of the first main surface and the second main surface so as to be electrically connected to the through vias. The Si substrate has a thickness less than the diameter of the through holes.
TW094137598A 2005-02-14 2005-10-27 Semiconductor device, method of manufacturing the same, capacitor structure, and method of manufacturing the same TWI292944B (en)

Applications Claiming Priority (2)

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JP2005036514 2005-02-14
JP2005237777A JP2006253631A (en) 2005-02-14 2005-08-18 Semiconductor device, method of manufacturing the same, capacitor structure, and method of manufacturing the same

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TW200629490A true TW200629490A (en) 2006-08-16
TWI292944B TWI292944B (en) 2008-01-21

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EP (1) EP1691414A3 (en)
JP (1) JP2006253631A (en)
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