TW200612568A - Method for making thin-film photoelectric converter - Google Patents

Method for making thin-film photoelectric converter

Info

Publication number
TW200612568A
TW200612568A TW094122752A TW94122752A TW200612568A TW 200612568 A TW200612568 A TW 200612568A TW 094122752 A TW094122752 A TW 094122752A TW 94122752 A TW94122752 A TW 94122752A TW 200612568 A TW200612568 A TW 200612568A
Authority
TW
Taiwan
Prior art keywords
photoelectric converter
layer
film photoelectric
making
silane
Prior art date
Application number
TW094122752A
Other languages
Chinese (zh)
Inventor
Mitsuru Ichikawa
Toru Sawada
Kenji Yamamoto
Original Assignee
Kaneka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaneka Corp filed Critical Kaneka Corp
Publication of TW200612568A publication Critical patent/TW200612568A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The present invention provides a method for making a p-type layer in a silicon-based thin-film photoelectric converter in which reduction of a transparent conductive oxide layer is suppressed and satisfactory performance is achieved. In a method for making a silicon-based thin-film photoelectric converter according to the present invention, the photoelectric converter including a transparent conductive oxide layer, a p-type semiconductor layer, a substantially intrinsic semiconductor photoelectric conversion layer, and an n-type semiconductor layer disposed in that order from the light incident side. the method includes forming the p-type layer by plasma CVD using at least a silane-based gas and a dilution gas containing hydrogen, wherein the pressure during the formation is in a range of 2 to 5 Torr, and the flow rate ratio of the dilution gas to the silane-based gas is 5 to 50.
TW094122752A 2004-07-12 2005-07-05 Method for making thin-film photoelectric converter TW200612568A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004204785 2004-07-12

Publications (1)

Publication Number Publication Date
TW200612568A true TW200612568A (en) 2006-04-16

Family

ID=35783716

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094122752A TW200612568A (en) 2004-07-12 2005-07-05 Method for making thin-film photoelectric converter

Country Status (3)

Country Link
JP (1) JPWO2006006368A1 (en)
TW (1) TW200612568A (en)
WO (1) WO2006006368A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005035394A1 (en) 2005-07-28 2007-02-15 Rohde & Schwarz Gmbh & Co Kg Method and system for digital triggering of signals based on two temporally spaced trigger events
KR101207582B1 (en) 2009-02-17 2012-12-05 한국생산기술연구원 Method for fabricating solar cell applications using inductively coupled plasma chemical vapor deposition
US8304336B2 (en) 2009-02-17 2012-11-06 Korea Institute Of Industrial Technology Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326992A (en) * 1992-05-14 1993-12-10 Kanegafuchi Chem Ind Co Ltd Semiconductor device
DE19581590T1 (en) * 1994-03-25 1997-04-17 Amoco Enron Solar Increasing the stability behavior of devices based on amorphous silicon, which are produced by plasma deposition with high-grade hydrogen dilution at a lower temperature
EP2251913A3 (en) * 1997-11-10 2012-02-22 Kaneka Corporation Method of Manufacturing Silicon-Based Thin Film Photoelectric Converter and Plasma CVD Apparatus Used for Such Method
JP4652498B2 (en) * 1999-05-31 2011-03-16 株式会社カネカ Method for manufacturing amorphous silicon thin film photoelectric conversion device
JP4813637B2 (en) * 2000-02-23 2011-11-09 三菱重工業株式会社 Thin film polycrystalline silicon and silicon photoelectric conversion device manufacturing method
JP3960792B2 (en) * 2001-12-21 2007-08-15 シャープ株式会社 Plasma CVD apparatus and method for manufacturing amorphous silicon thin film

Also Published As

Publication number Publication date
WO2006006368A1 (en) 2006-01-19
JPWO2006006368A1 (en) 2008-04-24

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