TW200416775A - Loadport apparatus and method for use thereof - Google Patents

Loadport apparatus and method for use thereof Download PDF

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Publication number
TW200416775A
TW200416775A TW92119301A TW92119301A TW200416775A TW 200416775 A TW200416775 A TW 200416775A TW 92119301 A TW92119301 A TW 92119301A TW 92119301 A TW92119301 A TW 92119301A TW 200416775 A TW200416775 A TW 200416775A
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Taiwan
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door
load port
opening
open
front open
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TW92119301A
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English (en)
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Jeffrey M Kowalski
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Asml Us Inc
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Publication of TW200416775A publication Critical patent/TW200416775A/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67775—Docking arrangements

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Furnace Details (AREA)
  • Resistance Heating (AREA)
  • Control By Computers (AREA)
  • Control Of Resistance Heating (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
  • Physical Vapour Deposition (AREA)
  • Control Of Fluid Pressure (AREA)
  • Control Of Non-Electrical Variables (AREA)

Description

200416775 Π) 玖、發明說明 相關應用之參考文獻 本申請案申明以下先前申請之臨時申請案之權益及優 先權，美國臨時專利申請序號6 0/3 9 6,5 3 6，標題”Thermal Processing System”申請日期July 15，2002和美國臨時專 利申請序號 6 0 / 4 2 8，5 2 6，標題’’ T h e r m a 1 P r 〇 c e s s i n g S y s t e m and Method for Using the Same'1 申請日期 November 22，2002。兩者在此被它們的參考資料合倂。 【發明所屬之技術領域】 本發明與一般半導體處理設備相關。特別的，本發明 與負載璋裝置及使用該裝置的方法有關。 【先前技術】 種種的處理設備和裝置被廣泛的用在積體電路和半導 體晶圓製造上。如此的設備典型的位於一個半導體製造設 施並且g亥半導體晶圓被傳輸貫穿該製造設施到適當的設備 來處理。藉著工業的發展，積體電路和半導體裝置變的更 複雜而且通常包括複雜精細的裝置和互相連接的多層製 成。該裝置的大小大幅的降低，因此顯著的增加在單一半 導體晶圓上製成的裝置的數目。結果，當一個晶圓經由在 製造設施的該處理設備發展時，半導體晶圓的價値大大的 增力口。 當經由該製程裝置移動半導體晶圓時和當轉移該晶圓 -4 - (2) (2)200416775 進出處理裝置時，相當的保護必須被實行來降低損壞和/ 或污染該晶圓的風險。更近一步的，該晶圓必須被保持在 一個乾淨場所的環境並且在一個控制的空氣裏處理。一批 晶圓通常被運送貫穿該製程裝置，並且經由一個密閉的前 開放一體式縱槽（前開放一體式縱槽）進出該處理裝置，其 中該前開放一體式縱槽爲眾所皆知的並且被工業界高度標 準化。該批晶圓被儲藏在該密閉的前開放一體式縱槽的內 部，此前開放一體式縱槽通常在保持在高度淸潔狀態。當 相當的保護必須被實行在晶圓運輸時，速度和生產量是最 重要的。因此，該半導體工業已經投入顯著的努力在晶圓 運輸設計和系統的發展上。 在特定的用途上，X量的晶圓成批的一起被處理。例 如，大型垂直鎔爐通常被用來做晶圓熱處理以完成熱處 理，例如退火，擴散或摻雜物注入。美國專利文號。 4，7 7 0 ; 5 9 0公開一個具有傳輸晶圓機械和船形容器交換單 元的大型垂直鎔爐的例子。一個卡式盒支架系統2 7具 有一些在一個垂直桿6 3上的卡式盒支撐架子6 1，其垂直 桿63依次的被個別的驅動機械65來操作以幫助卡式盒載 入和載出卡式盒之架系統27。一個晶圓轉移模組29在處 理後操作完成晶圓的傳輸從該船型容器3 9到空的卡式 盒，和未完成晶圓的傳輸從卡式盒到從該船型容器3 9來 處理。在一個如此大的鎔爐，每一個處理周期通常需要 大量的時間，如此當晶圓在其它船型容器3 9和卡式盒3 7 之間被傳輸時，該船型容器交換單元25使得一個船型容 -5- (3)200416775 器3! 個如 序號 請並 pfci 三主 甲δ円 2002 晶圓 輸； 環境 提供 改良 開在 統， 起的 在一 距離 開放 一·末 固定 (見摘 固定 抽空 放位 )在該處理膛之內。 近來，半導體處理設備已被設計來處理小批晶圓。一 ”迷你-批”型的系統被詳細的描述在PCT專利申請 (Attorney Docket no. F P 7 1 7 4 8 / M S S / W E N )，其同時申 附上和申明美國臨時專利申請序號的權益6 0/3 9 6,5 3 9 於 July 15，2003 和 60/428,526 申請於 November 22, ，藉由此處的參考文獻二者全部被具體化。小數目的 允許在前開放一體式縱槽和該處理設備之間更快的傳 然而，the環境該晶圓在該前開放一體式縱槽的 和在處理設備的環境通常是不同的，而且在此情況下 晶圓的傳輸需要複雜度和時間。一些在傳輸設計上的 進展已經發展到現今最高的水準。一個系統的例子公 美國專利文號 6 5 4 2 8，2 6 2，引導到一個離子注入系 其中該傳輸設計具有一個與真空機器人區域3 2在一 負載固定裝置，試圖來降低體積和最有效的進行貫穿 個前開放一體式縱槽和該離子注入膛1 4之間的移動 的操作。當一群晶圓藉著一個第一末端受動器從該前 一體式縱槽被移動時，以及當一群晶圓藉著提升該第 端受動器和在第一空氣開放位置裡降低一個第一負載 裝置門被載入到負載固定裝置時，產量改善是想要的 1要）°此第一負載固定裝置然後藉著提升該第一負載 裝置門密閉到它的密閉位置。此負載固定裝置然後被 ;然後一個第二負載固定裝置門被升起到一個真空開 置。最後，一個3 -軸機器人從該負載固定裝置移動 -6- (4) (4)200416775 該晶圓之一到該離子處理膛負載固定裝置。 不幸的，潛在的半導體速度受限於每一個晶圓在前開 放一體式縱槽1 2和離子處理膛1 4之間被移動的次數。每 一個動作增加額外的時間並且增加半導體處理系統的複雜 度。一個負載埠裝置，特別爲了批處理，及使用該裝置的 方法，其該設施改良晶圓傳輸速度和克服以上和其他已 知負載埠的缺點，及使用該裝置的方法是必須的。 【發明內容】 發明槪述 在一個觀點t，本發明在沒有利用先前技術的多重負 載固定裝置系統的情況下，有利的提供半導體處理設備想 要的產量，例如一個小批垂直鎔爐系統。本發明提供晶圓 的傳輸，該傳輸從一個前開放一體式縱槽直接到一個與處 理設備連接在一起的晶圓載具。一種隔離的負載固定裝置 允許隔離的密封和淸潔，以及可以與一種標準負載埠結 合。此結合可以降低該系統的複雜性和足跡。該典型二 階負載固定裝置可以被結合在一般的負載埠。本發明的典 型一階 負載固定裝置”負載痺隔離兩個分開的環境，並 且被裝備來使第一和第二環境相配，例如前開放一體式縱 槽內的環境和鎔爐內的環境。本發明的另一個觀點，該負 載埠的氣動和/或電控制被提供，其藉著前開放一體式縱 槽來維持密閉環境，不管該負載埠是在開或關的位置。 0ne實施例 of the本發明的一個實施例被引導至一 -7- (5) (5)200416775 種負載埠裝置其幫助從一個前開放一體式縱槽到該處理設 備的晶圓傳輸。一般而言，該負載埠裝置包括一種平臺， 一種外罩，一種負載埠門，一種負載嗥門密封墊和一種適 應系統。該平臺被裝配用來安全的接收該前開放一體式縱 槽。該外罩包括一個第二膛開口。 當該前開放一體式縱 槽停靠到平臺時，該外罩被裝配用來密封的接和前開放一 體式縱槽。該負載埠門包括一種機械裝置入口其用來開 啓該前開放一體式縱槽的門。該負載埠門在一開的位置和 關的位置之間是可移動的，其中所謂的開口是在與該第二 膛直接聯繫。當該負載埠門在關閉位置時，該負載埠門密 封墊選擇性的維持密閉第二膛開口。一種適應系統被提供 並且與負載埠裝置聯繫。更特別的，該適應系統爲適應微 型環境膛作準備，所謂微型環境膛在該負載埠門在關閉位 置’該負載璋門密封墊背密封，和該前開放一體式縱槽門 被開啓時’藉著該負載埠，該密封墊，該開口，和該前開 放一體式縱槽內部被限定。一種從該前開放一體式縱槽到 該處理設備的晶圓傳輸方法也被公開。 此負載ί阜及使用方法具有其他特色和優點，其將會從 附圖中變的明顯並且在附圖中被更詳細的被提供，該附圖 被包含在此設計規範的一部份和本發明詳述，並一起用來 解釋本發明的原則。 【實施方式】 本發明詳細說明 冬 (6) (6)200416775 一種圖示的半導體處理設備1 〇 〇，在本例中唯一個小 批垂直鎔爐系統’其具有本發明的負載埠裝置被顯示在圖 1的透視圖示，圖2的側平面圖示和圖3的俯視圖。當該 鎔爐系統1 〇 〇與四個單元1 1 0 ’ 1 2 0，1 3 0和1 4 0 一起被顯 示時，該系統可以具有一個或任何個數的單元是所想要 的。該單元可以是任何形式的處理單元而且可以與其它單 元一樣，與其它單元不一樣，或前兩者的合倂。在圖式的 本實施例中，所有單元110，12 0 ’ 13 0 和14 0被包括在 垂直批鎔爐系統。此處所描述的處理設備微小批垂直鎔爐 單元，本發明不限於此’並且可以被用於任何形式的半導 體處理設備。 在本例中..，每一單元包括處理膛1 5部其中不同的熱 處理在此執行。參照單元1 1 0， 一種升降梯1 1 2被用來 移動一個承載數個半導體晶圓的晶圓載具1 1 3進出處理 膛111。如圖1所示，其它單元120，130，140中每一個 也包括組合升降梯（只有142被不出）和晶圓滅具123’ 13 3， 1 43，其用來運輸晶圓進出分別的處理膛1 2 ]， ]3 1，] 4 1。爲單純起見，一個單元將被詳述，而且可以理 解的是如此的描述可以被用在其他單元。該項目晶圓在此 被廣泛的利用來表示任何容納大量積體電路的物品，單一 或多個平板狀物品等諸如此類。晶圓在前開放一體式縱槽 和該單元之間被傳輸。如圖1所示，兩個前開放一體式縱 槽結合在每一個單元。前開放一體式縱槽1 1 6，Π 8與單 元110結合，前開放一體式縱槽126，〗28與單元120結 (7) (7)200416775 口’則開放一體式縱槽丨3 6，1 3 8與單元1 3 0結合，以及 前開放—體式縱槽146，148與單元140結合。其它配置 和前開放一體式縱槽的數目可以被利用。前開放一體式縱 槽非常普遍並且在工業界被高度標準化。該前開放一體式 紘：槽通吊是縱槽狀密封容器，其儲存許多晶圓前開放一體 式縱槽內部。該前開放一體式縱槽具有一前開放一體式縱 槽門來允δ午該晶圓進入。如同前開放一體式縱槽非常普遍 一樣，在此不做更近一步的詳述。 參照圖2，晶圓在前開放一體式縱槽1 1 8和該晶圓載 具1 1 3之間經由一種晶圓傳輸單元i〗4被傳輸。該前開放 一體式縱槽內部代表一個第一環境，and the general inteH ο of the以及處理設備的一般內部（例如在該晶圓 載具1 1 3 )代表一個第二環境。爲了幫助晶圓運輸，該前 開放一體式縱槽1 1 8被支撐在一種與該負載埠2 0 0偶合 的平臺1 19。該負載埠2 0 0(圖2)被裝配來確保接收到該負 載埠2 0 0前開放一體式縱槽。當該負載埠2 〇 〇在側視圖示 是可見時，可以了解的是每一個膛；1丨；[，]2 ]，] 3 1，] 4 1 具有一個結合負載埠。一種自動和/或手動處理可以藉著 該負載埠2 0 0被用來偶合該前開放一體式縱槽n 8。在運 輸晶圓時，該升降梯1 1 2被下降，如此該載具1 1 3通常 在接合該負載埠2 0 0時被放置該前開放一體式縱槽1 1 8對 面。根據一個實施例，該第一環境（前開放一體式縱槽內 部）通常包含具有大約21PPm體積的氧氣濃度，以及該第 二環境（處理設備內部）通常包含具有大約5 ppm體積的氧 (8) (8)200416775 氣濃度。因此，該前開放一體式縱槽內的環境通常與晶 圓暴露在處理設備的環境不同。一個顯著的優點，本發明 爲適應晶圓做準備，或著在處理間爲了需要，允許晶圓從 一個環境暴露到另一個環境。 參照圖4 一個前平面圖示，和圖5 —個橫截面圖視， 該負載埠2 0 0被更詳細描述。在圖4和圖5中負載j：阜2 〇 〇 的不同的感測器和控制鍵被省略來保持淸楚，但是被顯示 在圖6到圖1 2的槪要圖示。 該負載璋2 0 0通常包括一種外罩2 4 0，一種負載堤門 25 0，一種負載埠門密封墊260， 和適應系統2 70。當該 負載埠門2 5 0在關閉位置2 5 3，該負載埠門密封墊2 6 〇被 密閉5和該前開放一體式縱槽門2 1 1被開啓時，一種微型 環境膛 2 7 1被定義爲負載場門 2 5 0，負載埠門密封墊 2 6 0，一種前開放一體式縱槽密封墊2 4 6，一種開口 2 4 ]， 和該前開放一體式縱槽2 1 0的內部2 1 3。該適應系統2 7 0 包括一種進氣埠2 7 3，一種排氣埠2 7 4，並且爲了適應微 型環境膛2 7 1與微型環境膛2 7 1聯繫。 在該描述實施例中，該適應系統2 7 0包括一個進氣埠 2 7 3和一個排氣埠2 74，其被提供在該外罩24 0之內。然 而，應該了解的是氣體入口埠的數目和排氣埠的數目可以 應需求被裝配和利用。更近一步的，氣體入口埠和排氣埠 可以應需求與可移動式負載埠門2 5 0，凹處2 5 4，和/或該 前開放一體式縱槽2 1 0結合。 如圖4和圖5所示，該負載埠門密封墊2 6 0最好是壓 (9) (9)200416775 縮密閉墊，該密封墊接合該負載埠門2 5 0和該外罩2 4 0來 選擇性的從膛2 2 0封閉開口 2 4 1。如圖5所示，該負載璋 門密封墊2 60從膛220封閉開口 241。如圖9所示，該負 載j：阜門密封墊2 6 0被抽出空氣並且與負載ί阜門1 5 0被移到 開啓（圖1 2)。可以領會的是任何的配置數目可以用來做密 封墊，包括可抽氣式的密封墊。 如圖6所示，該前開放一體式縱槽平臺2 3 0被裝配來 接收和確保該前開放一體式縱槽2 1 0。該前開放一體式縱 槽平臺2 3 0包括一對動態探針231-1和231-2，一對位於 鄰近該動態探針2 3 1 - 1和2 3 1 - 2的位置感測器2 3 2 - 1和 2 3 2 - 2，和一種前開放一體式縱槽固定機械結構2 3 3。一 個或多個動態探針可以被用來該前開放一體式縱槽2 1 0。 一個或多個位置感測器可以被放置在接近一個或多個動態 探針的位置，其目的爲偵測該前開放一體式縱槽2 1 0的位 置。在該描述的實施例中，與三個動態探針感測器（只有 感測器231-1和23卜2被顯示）對應的三個動態探針（只有 探針2 3 1 - 1和2 3 1 - 2被顯示）被包括在該平臺2 3 0。更好 的，每一個動態探針感測器被放置在鄰近對應的動態探針 來決定一個前開放一體式縱槽2 1 0是否接收到。可以領會 的是任何動態探針和/或動態探針感測器的配置數目可以 藉著本發明的教導來使用。 如圖6所示，固定機械結構2 3 3是一種藉著前開放一 體式縱槽2 1 0所接收的尖角栓，如此尖角栓的旋轉動作關 緊前開放一體式縱槽2 1 0到平臺2 3 0。可以領會的是任何 -12- (10) 200416775 固定機械結構的配置數目可以應需求被使用，以及固定機 械結構通常由一個既有的負載埠對應的設計規範來定義。
如圖6所示，一種移動式容器底座系統2 3 9可以被定 義爲包括該平臺2 3 0，一種平臺基底2 3 4，以及一種停靠 動作機械結構2 3 7。當固定機械結構2 4 2 (例如圖4所描述 的則開放一體式縱槽夾鉗2 4 2 - 2，和2 4 2 - 2 )接和對應的探 針（並未顯示）時，該移動式容器底座系統2 3 9關緊前開放 一體式縱槽2 1 0到平臺2 3 0，該探針由前開放一體式縱槽 21〇伸出來關緊該前開放一體式縱槽21〇到該外罩24 0。 54平曼230被固定在平臺基底234來支撐前開放一體式縱 槽平臺2 3 0在兩個或多個停靠位置之間。一種在前開放一 體式縱槽平臺.2 3 0和該平臺基底2 3 4之間的停靠動作機械 結構2 3 7支撐平臺2 3 0的動作。被描述的該停靠位置包括 一出塢位置2 3 5 (圖6 )和入塢位置2 3 6 (圖7 )。一種停靠感 測器2 3 8可以被周來偵測前開放一體式縱槽平臺2 3 0的位 置。可以領會的是任何爲了移動前開放一體式縱槽平臺 2 3 〇在出塢位置2 3 5和入塢位置2 3 6之間前進和後退的動 作可以錯者本發明的教導來被使用。根據一描述的實施 例’該停靠動作機械結構2 3 7包括一種用來啓動在停靠位 置2 3 5和2 3 6之間的動作的氣體瓶。 如圖7所示，該外罩2 4 〇包括—種開口 24〗到第二膛 2 2 〇 °該第二腊2 2 0在此通常被定義爲處理執行地點，例 如錯爐環境；然而，該第二膛並不需要是一種處理膛，而 可以是任何其它在該系統所用的膛。如圖6和圖7所示， -13- (11) 200416775 該前開放一體式縱槽2 1 0從出塢位置2 3 5運送 2 4 0的入塢位置2 3 6。一個或多個固定機械結 如，夾鉗242-1和242-2 (圖4)接和該前開放 2 ] 0來確保在前開放一體式縱槽2〗0和該外罩 氣密閉。根據一描述實施例，該固定機械結構 接合探針的夾鉗，該探針從該前開放一體式縱 面大約伸出到該前開放一體式縱槽2 1 0的上表 機械結構2 4 2接合並且偏移該前開放一體式縱 該外罩240。可以領會的是其它固定機械結構 和配置可以藉著本發明的教導來被利用。如圖 前開放一體式縱槽2 1 0被關緊到該平臺2 3 0 2 4 0密封。 根據在圖7所示的實施例，一種前開放一 封墊246被放置在鄰近該開口 241位置，其 該前開放一體式縱槽2 1 0在入塢位置2 3 6。固 2 4 2接合並且偏移該前開放一體式縱槽2 ] 0面 口 2 4 1，如此該前開放一體式縱槽密閉墊2 4 6 罩2 4 0有關的該前開放一體式縱槽2 1 0的外罩 的是任何在密閉空氣的情況下，用來接合該前 縱槽2 1 0到該外罩24 0的配置可以被利用。根 的實施例，該前開放一體式縱槽密封墊是一 5 240的〇·環密封墊。 再參照圖7，一種容器接合感測器243被 罩2 4 0並且被用來決定該前開放一體式縱槽2 1 到接近外罩 構242 ，例 一體式縱槽 2 4 0之間的 2 4 2是一對 槽2 1 0的反 面。該固定 槽2 1 0面對 2 4 2的數目 7所示，該 並解與外罩 體式縱槽密 目的爲密封 定機械結構 對該外罩開 密封與該外 。可以領會 開放一體式 據一個圖示 塵在該外罩 固定在該外 〇是否與該 -14- (12) 200416775 外罩24〇接合。可以領會的是任何容器接 的配置和數目可以應要求被利用。 如圖8所示，負載埠門2 5 0可以應需 (圖1 2)和關閉位置2 5 3之間往任何方向移動 門2 5 0在開啓位置時，該開口 241與第二f 繫。該負載埠門2 5 0包括一種凹處2 5 4，其 結構之該前開放一體式縱槽門2 5 5，並且該 足夠的空間來儲存前開放一體式縱槽門2 1 示，有關開口 240的負載璋門25 0在關閉位 從外部週遭環境來密閉第二膛220。移動該 到該關閉位置2 5 3必且啓動該負載埠門密封 P 2 4 1 〇 再參照圖8，當該負載埠門2 5 0在關閉 該負載埠門2 5 0的該凹處2 5 4與開口 2 4 1鄰 放一體式縱槽2 1 0與外罩接合時，該前開放 2 1 1可以經由開口 24 1進入。進入機械結構 體式縱槽門2 5 5從凹處2 5 4展開，並且與該 縱槽門2 ] 1接合來打開和/或關閉該前開放 2 11。根據一個圖示的實施例，進入機械; 放一體式縱槽門2 5 5藉著凹處2 54來固定， 埠門25 0在開啓位置2 5 2 (圖12)和關閉位置 間被移動。現今一般技術之一將爲領會到在 之內其它進入機械結構之前開放一體式縱槽 可以被用來接合該前開放一體式縱槽門2 1 1 合感測器244 求在開啓位置 。當該負載埠 丨堂22 0直接聯 包含進入機械 凹處254具有 1。如圖7所 置2 5 3，因此 負載埠門2 5 0 墊2 6 0從該開 位置2 5 3時， 近。當該前開 一體式縱槽門 之該前開放一 前開放一體式 一體式縱槽門 結構的該前開 並且與該負載 2 5 3 (圖 11)之 該發明的範圍 門2 5 5的配置 ，例如一種進 -15- (13) (13)200416775 入機械結構2 5 5的前開放一體式縱槽門導致該前開放一體 式縱槽門收回到該前開放一體式縱槽之內。 如圖8所示，該進入機械結構之前開放一體式縱槽門 2 5 5包括一種圖示的栓組件2 5 6其具有一個或多個旋轉 鍵，例如旋轉鍵2 5 7，一種校正探針2 5 8，合一種感測器 2 5 9。該栓組件2 5 6通過開口 241來接合該前開放一體式 縱槽門21 1。一個或多個旋轉鍵2 5 7被用來關緊前開放一 體式縱槽門2 1 1到進入機械結構之前開放一體式縱槽門 2 5 5。一個或多個校正探針2 5 8被用來校正與栓組件2 5 6 有關的移動式前開放一體式縱槽門2 1 1。一個或多個感測 器2 5 9可以被用來確認與栓組件2 5 6有關的移動式門的位 置。根據一個圖示的實施例，一種雙旋轉鍵2 5 7被用來接 合該前開放一體式縱槽門2 1 1，其方式爲藉著利用一種單 一動作的裝置在接合位置和解脫位置之間同時旋轉該雙旋 轉鍵。 如圖9所示，該進入機械結構之前開放一體式縱槽門 2 5 5從凹處2 5 4可收回的延伸來接和前開放一體式縱槽門 2 ] 1。當該進入機械結構之前開放一體式縱槽門2 5 5被延 伸時’該权正探針2 5 8校正該前開放一體式縱槽門2 1 1和 栓組件2 5 6。該感測器2 5 9顯示該移動式門和栓組件2 5 6 之間的接近。一個或多個旋轉鍵2 5 7被啓動來接和該前開 放一體式縱槽門2 1 1。如圖1 〇和1 1所示，該進入機械 結構之前開放一體式縱槽門2 5 5收回到凹處2 5 4與該前開 放一體式縱槽門2 1 1 —起。開啓該前開放一體式縱槽門 -16- (14) (14)200416775 - 1 1允δ午進入到前開放一體式縱槽2 1 〇的內部2 1 3。 爲了適應該晶圓，或從第一環境移動該晶圓到第二環 境’該前開放一體式縱槽2 1 〇的內部2 1 3被淸潔，並且通 吊是在負載埠門2 5 〇在關閉位置2 5 3，負載埠門密封墊 2 6 0被挖閉’和前開放一體式縱槽密封墊2 6 4被密閉時被 執行（如圖1 1所示）。根據一個圖示的實施例，該前開放 一體式縱槽2 1 〇 (例如前開放一體式縱槽η 8 )被固定在一 種晶圓處理裝置的該外罩2 4 0上，此處理裝置通常包括一 種第二膛220。前開放一體式縱槽2 ；[ 〇利用例如該前開放 一體式縱槽密封墊264來被固定到開口 24〗附近的該外罩 240。前開放一體式縱槽210在該前開放一體式縱槽i ! 8 與開口 241附近的外罩240緊密接合之後被開啓。開啓該 前開放一體式縱槽門2 1 1的動作藉著經由開口 24 1延伸該 前開放一體式縱槽門2 5 5來接合與開啓該前開放一體式縱 槽門2 1 1被執行。開啓該前開放一體式縱槽門2 1 1的動作 包括將該進入機械結構之前開放一體式縱槽門2 5 5與移動 式前開放一體式縱槽門2〗1連在一起，並且收回該進入機 械結構之前開放一體式縱槽門2 5 5和移動式前開放一體式 縱槽門2 1 1兩者到負載埠門2 5 0之內的凹槽。 根據一個圖示的實施例，在該前開放一體式縱槽門被 開啓之後，該微型環境膛藉著經由一進氣口注入一種第一 氣體進入該微型環境來被淸潔，經由一排氣口從微型環境 來釋放一種第一氣體。根據一個圖示的實施例，該微型 環境膛被定義爲經由一個或多個進氣口 2 7 3，經由該前開 - 17- (15)200416775 放一體式縱 或多個排氣 可替代 一進氣口堤 質，例如氧 潔氣體的量 膛2 7 1提供 較少的淸潔 根據一 負載埠門密 該負載埠門 2 4 1來維持 2 2 0之間的 2〗〇內的該 移動到該第 樣的前開放 之內。根據 個前開放一 該負載 1 2 )被移動至 封墊到第二 門2 1 1的動 前開放一體 2 1 1到該前 槽2 1 0內部2 1 3的一部分的氣流以及經由一個 口 2 7 4的氣流。 的是，該微型環境膛2 7 1藉著一淸潔空氣經由 2 7 3被適應。該淸潔氣體與任何不想要的物 氣，濕氣，和粒子物質經由排氣口埠274。淸 是由膛的大小來決定。有利的是，該微型環境 一個較小的腹，此腹通常在一淸潔處理時消耗 氣體。 個圖示的實施例’該負載埠門2 5 0藉著開啓該 封墊2 60被打開，然後從該關閉位置25 3移動 2 5 0到開啓位置2 5 2 (圖1 2 )’即可以經由開口 前開放一體式縱槽2 1 0的內部2 1 3和第二膛 聯繫。於是，一個被裝在該前開放一體式縱槽 晶圓2 1 2可以從該前開放一體式縱槽 2 1 0被 二膛220。在處理之後，該晶圓被移動到一 一體式縱槽之內或著另一個前開放一體式縱槽 一個圖示的實施例，該晶圓隨後被放置在另一 體式縱槽例如前開放一體式縱槽1 1 6。 埠門2 5 0的關閉動作是從該開啓位置2 5 3 (圖 iJ關閉位置2 5 2 (圖1 1 )以及密閉該負載埠門密 膛2 20的開口 24 1。關閉該前開放一體式縱槽 作是藉著經由開口 24 1延伸該進入機械結構之 式縱槽門2 5 5來送回該前開放一體式縱槽門 開放一體式縱槽2 1 0。根據一個圖示的實施 -18- (16) (16)200416775 例，關閉該前開放一體式縱槽門2 1 1的動作涉及從被定義 在負載璋門2 5 0範圍之內的該凹處25 4延伸該進入機械結 構之前開放一體式縱槽門2 5 5和該前開放一體式縱槽門 2 11，關閉該前開放一體式縱槽門2 1 1到該前開放一體式 縱槽210，從該進入機械結構之前開放一體式縱槽門255 來釋放該前開放一體式縱槽門2 1 1，以及收回該進入機械 結構之前開放一體式縱槽門2 5 5到凹處2 5 4之內。前開放 一體式縱槽2 1 0然後從該外罩240和該前開放一體式縱槽 平臺2 3 4被釋放。 爲了圖示和描述的目的，本發明之特定實施例的上述 說明已經被提出。它們並不意指是本發明的全部或限制此 發明在公開的嚴格範圍內，並且明顯的，許多的修正和改 變在按照以上的教導是可行的。該實施例被選出和被描述 是爲了最有效的解釋本發明的原則和實際的運用，從而最 有效的利用其它現今技術到爲了配合預期的特殊用途而具 有不同修正的本發明和不同的實施例。所想要的是本發明 的觀點藉著所附的本專利範圍和相等物被定義。 【圖式簡單說明】 圖1槪括來說描述一種小批垂直鎔爐系統的透視圖 示，其依照一個圖示的實施例具有四個單元。 圖2槪括來說依照一個單元的圖1來描述一側平面圖 示。 圖3槪括來說依照一個單元的圖1描述一俯視圖。 -19- (17) (17)200416775 圖4槪括來說依照圖2描述該負載埠的前平面圖示。 圖5槪括來說依照圖2描述該負載埠橫截面圖視。 圖6依照本發明的圖示實施例爲負載埠裝置槪要圖 不，其包括與一種可移動式的容器底座偶合的前開放—體 式縱槽。 圖7依照圖6爲槪要圖示，其描述的該負載埠裝置包 含一種與該外罩在密閉聯繫的前開放一體式縱槽。 圖8依照圖6爲槪要圖示，其描述的該機械裝置入口 在伸展位置。 φ 圖9依照圖6爲槪要圖示，其描述伸展該機械裝置入 口和接合一種前開放一體式縱槽門。 圖1 〇依照圖6爲槪要圖示，其描述該前開放一體式 縱槽的伸展該機械裝置入口，此入口與該前開放一體式縱 槽的可移動門偶合。 圖11依照圖6爲槪要圖示，其根據本發明實施例來 描述一種微型環境膛。 圖12依照圖6爲槪要圖示，其描述一種負載棒門@ ♦ 開啓位置。 主要元件對照表 110 OC3 -- 早兀 111 處理膛 112 升降梯 113 晶圓載具 -20- (18)200416775 ]1 6， 118 前 開 放一 體 式 縱 槽 119 平 臺 1 20 σ 口 早 元 1 2 1 處 理 膛 123 晶 圓 載具 126, 128 前 開 放一 體 式 縱 槽 13 0 單 元 13 1 處 理 膛 133 晶 圓 載具 13 6 前 開 放一 體 式 縱 槽 140 單 元 14 1 處 理 膛 1 42 升 降 梯 143 晶 圓 載具 146, 148 前 開 放一 體 式 縱 槽 200 負 載 i阜 2 10 刖 開 放一 體 式 縱 槽 2 11 ..W·· 刖 開 放一 體 式 縱 槽門 2 12 晶 圓 2 13 內 部 220 膛 23 0 平 臺 23 1- -1，23 1- —2 動態探針 2 3 2 - -1，2 3 2 - -2 位置感測器
-21 - (19)200416775 233 固 234 平 23 5 出 23 6 入 237 停 23 8 停 23 9 移 240 外 24 1 開 242 固 242 — 1， 242 -2 246 /一 刖 250 負 252 開 253 關 254 凹 255 進 256 栓 257 旋 25 8 校 259 感 260 負 27 0 適 27 1 微 定機械結構 臺基底 塢位置 塢位置 靠動作機械結構 靠感測器 動式容器底座系統 罩 □ 定機械結構 夾鉗 開放一體式縱槽密封墊 載璋門 啓位置 閉位置 ' 處 入機械結構之該前開放一體式縱槽門 組件 轉鍵 正探針 測器 載埠門密封墊 應系統 型環境膛 -22- 200416775 (20) 273 進氣口 274 排氣口

Claims (1)

  1. 200416775 ⑴ 拾、申請專利範圍 i 一種負載埠裝置，其目的爲從具有〜種前開放一 體式縱槽門的一種前開放一體式縱槽的內部傳輸半導體晶 圓到一種半導體處理設備，包含： 一種被裝配來安全的接收該前開放一體式縱槽的平 臺； 一種外罩包括 一種第二膛開口， 該外罩在該前開放一體式縱槽被關緊在該平臺時，被 裝配來密閉的接合該前開放一體式縱槽； 一種負載埠門包括 一種進入機械結構之前開放一體式縱槽門，其目的爲 打開該前開放一體式縱槽門， 該負載埠門，其可以在一開啓位置和一關閉位置之間 移動’並且其中該開口與該第二膛直接聯繫； 一種負載埠門密封墊其目的爲當該負載埠門在該關閉 位置時選擇性的密閉該第二膛的該開口；以及 一種與該開口聯繫的適應系統，其目的爲適應一種微 型環境膛，當該負載埠門在該關閉位置，該負載埠門密封 墊被密閉，和該前開放一體式縱槽門被開啓時，此微型環 境被限定爲該負載埠門，該開□，和該前開放一體式縱槽 內部。 2 ·如專利申請範圍第1項之裝置，該負載埠門更近 步的包括一種負載埠門凹處，以及該微型環境膛更近一 -24 - (2) (2)200416775 步的被限定爲該負載埠門凹處。 3 .如專利申請範圍第2項之裝置，該進入機械結構 之前開放一體式縱槽門從該負載璋門凹處可收回的延伸。 4 .如專利申請範圍第3項之裝置，該進入機械結構 之前開放一體式縱槽門包括一種門栓，其可以向具有一種 可移式門的該前開放一體式縱槽門延伸，接合該可移式 門，以及藉著該可移式門收回到該負載埠門凹處。 5 ·如專利申請範圍第4項之裝置，該進入機械結構 之前開放一體式縱槽門更近一步的包括一種用來可釋放的 接合該可移式門的栓組件。 6. 如專利申請範圍第1項之裝置，該負載埠門密封 墊與該負載埠門偶合。 7. 如專利申請範圍第6項之裝置，該負載埠門密封 墊是一種與該負載埠門偶合的膨脹密封墊，其目的爲當該 負載埠門在該關閉位置時緊密的接合該外罩。 8 .如專利申請範圍第1項之裝置，該適應系統包括 戶：！來提供一種第一氣體到該微型環境膛的一種進氣口，和 用來從該微型環境膛釋放該氣體的一種排氣口。 9 . 一種方法，其目的爲適應一種具有前開放一體式 縱槽門之前開放一體式縱槽的內部，該方法包含： 經由該接合開口延伸一種進入機械結構之前開放一體 式縱槽門和開啓該前開放一體式縱槽門； 適應一種微型環境膛，當該前開放一體式縱槽的該前 開放一體式縱槽門被開啓時，此微型環境膛被限定爲該處 -25 - (3) 200416775 理裝置的一種負載埠門在關閉位置，該開口，和該' 一體式縱槽內部；以及 Ά
    從該關閉位置開啓和移動該負載埠門到該 從而經由該開口連接該內部和一種第二膛。 % 10.如專利申請範圍第9項之方法，更近〜歩％ 從該開啓位置移動和關閉該負載埠門到與該外_ 接合之該關閉位置。 11.如專利申請範圍第9項之方法，更近一歩^ 經由該外罩延伸該進入機械結構之前開放一 _1 ^；
    門來關閉該前開放一體式縱槽門；以及 從前開放一體式縱槽平臺釋放該前開放一體式_ ^ % 1 2 .如專利申請範圍第9項之方法，該淸潔奠_ 0 的包括： & 經由一種進氣口來配與一種第一氣體到微型_ _ 及 為；4 經由一種排氣口從該微型環境釋放該第一氣_， 該微型環境膛被限定爲進氣口和排氣口之間的〜_
    侃。 13.如專利申請範圍第9項之方法，該淸潔更进％ 的包括： 經由一種在外罩上的進氣口來配與一種第一氣體到微 型環境；以及 經由一種在外罩上的排氣口從該微型環境釋放該第一 氣體，其中該微型環境膛被限定爲進氣口和排氣口之間的 -26- (4) (4)200416775 一種氣體流。 14.如專利申請範圍第9項之方法，更近一步的包括： 經由該開口進入該前開放一體式縱槽。
    -27-
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