TW200307979A - Gas purging method and exposure system, and device production method - Google Patents

Abstract

When gas-purging a space between a specific object (RST or R) disposed on the optical path of light (EL) having a specified wavelength and an optical device (ILU), a shielding member (22) for shielding from outside air a space (IM) between the optical device and the specific object is disposed with a specified clearance kept formed with respect to the specific object, and a specific gas lower in absorption characteristics with respect to the light than an absorbing gas is supplied to the space (IM) via an air supply pipe (60) connected to the shielding member. An inner gas in the space (IM) is exhausted to the outside via an exhaust pipe (61) connected to the shielding member. Accordingly, the use of a small shielding member capable covering a space between an optical device and a specific object enables gas substituting almost as accurate as when a large, heavy air-tight shielding vessel is used.

Description

200307979 玫、發明說明： 【發明所屬之技術領域】 本發明係關於氣體清除方法及曝光裝置、以及元件製 造方法’詳言之，係關於將配置於既定波長光之光路上的 物體與光學裝置之間之空間，進行氣體清除的氣體清除方 法及適合於實施該氣體清除方法之曝光裝置，以及使用該 曝光裝置之元件製造方法。 【先前技術】 習知，在用來製造半導體元件（積體電路）、液晶顯示籲 元件等電子元件之微影製程，使用各種曝光裝置，在基板 上形成電子元件之微細圖案。近年來，特別從生產性方面 之考量’以縮小投影曝光裝置為主來使用，該裝置係將所* 欲形成之圖案依比例放大4〜5倍程度而形成之光罩（遮罩）-或標線片（以下，統稱為「標線片」）的圖案，透過投影光 學系統縮小而轉印於晶圓等之被曝光基板（以下，稱為「 晶圓」）上。 在此種投影曝光裝置，為對應積體電路之微細化而實 ❿ 現高解析度’已將其曝光波長轉移至更短波長側。現在， 其波長雖以KrF準分子雷射光之248nm為主流，但是更短 波長之ArF準分子雷射光之193mn亦漸進入實用化階段。 並且，最近亦進行使用真空紫外域光之投影曝光裝置之提 案，係使用發射更短波長之波長157nm之F2雷射光，或波 長126nm之Arz雷射光等，所謂被稱為真空紫外域之波長 帶之光的光源。 200307979 此種波長180nm以下之真空紫外光，會被大氣中之氧 氣或水蒸氣強烈吸收。因此，將真空紫外光當作曝光用光 使用之曝光裝置’為了要從曝光用光之光路上之空間排除 氧氣或水蒸氣等之吸光物質，需要以幾乎不吸收曝光用光 之氮氣或氦等稀有氣體作氣體置換（氣體清除）。例如，在 以發射波長157nm之F2雷射光為光源之曝光裝置，一般認 為從雷射至晶圓為止之光路之大部分，則需要將殘留氧氣 濃度抑制於lppm以下。 又’兩解析度化，不僅能以曝光波長之短波長义達成 ，而且亦能以光學系統之大數值孔徑（Ν· A.)化實現，故最 近亦進行光學系統之更一層之大Ν· Α·化的開發。然而，為 要實現高解析度，除投影光學系統之大Ν. Α•化以外尚加上 ’需要投影光學系統之像差之減低。因此，在投影光學系 統之製程’進行利用光之干涉的波面像差測量，將殘留像 差量以曝光波長之1/1000程度之精度測量，依據該測量值 進行投影光學系統之調整。 如上述之大Ν· Α·化或低像差化，係視野越小之光學系 統則越容易實現。但是，對曝光裝置而言，視野（曝光範 圍）越大處理能力（生產能力）就越提高。因此，為使用視野 雖小但Ν·Α·大之投影光學系統，且實質上能獲得大曝光 範圍，在曝光中，將標線片與晶圓邊維持其結像關係邊作 相對掃描的例如掃描型投影光學系統，例如步進掃描（^印 and scan)方式之掃描型投影光學系統（即所謂掃描步進機 (scanning stepper))，就成為最近之主流。 200307979 【發明内容】 然而，以上述之真空紫外光為光源的曝光裝置，亦需 要將標線片附近之空間之殘留氧氣或水蒸氣濃度抑制於 lppm程度以下。實現其之方法，亦可考慮將保持標線片之 標線片載台全體以大的氣密型遮蔽容器（標線片載台室）覆 蓋，將其内部（包含標線片載台、標線片）全體進行氣體清 除之方法。然而，右採用此種遮蔽容器，曝光裝置就變成 大型化及重量化，半導體工廠潔淨室内之曝光裝置每1部 之設置面積（footprint)就變更大，由於設備成本（或運轉 費用）之增加，結果會導致半導體元件之生產性降低。又 ’要接近標線片附近就變成困難，使維護標線片載台等時 之作業性降低，以致維護所需時間增加，亦會導致半導體 元件之生產性降低。 掃描型投影曝光裝置，由於在曝光中將標線片高速掃 描之需要，具備大型標線片載台，要覆蓋該大型標線片載 台全體之遮蔽容器（標線片載台室）則變成更大型化。 又’標線片附近之空間之氣體清除，並不僅是投影曝 光裝置之問題，搭載於投影曝光裝置而用以測量投影光學 系統像差的檢查光學裝置等，亦成為問題。 本發明有鑒於上述實情，其第丨目的在於提供：一種 氣體清除方法，將配置於光之光路上之物體與光學裝置之 間之空間進行有效率的氣體置換，不必使用大型且重之氣 密性遮蔽容器來實現。 μ 本舍明之第2目的在於提供：一種曝光裝置，能抑制 200307979 裝置之大型化、重量化，且可提高曝光精度。 本發明之第3目的在於提供：一種元件製造方法，能 提昇高積體度之元件之生產性。 本發明之氣體清除方法，係將配置於既定波長光之光 路上的物體與光學裝置之間的空間進行氣體清除，其係包 含以下步驟： 以至少在與該物體、及保持該物體之保持構件中任一 特定物體之間形成既定之第1間隙的狀態下，配置將該光 學裝置與物體之間的空間與外氣阻隔之遮蔽構件的步驟； 及 將對該光之吸收特性比吸收性氣體低的特定氣體，透 過形成於該遮蔽構件之供氣用開口，而供應於該遮蔽構件 内部之空間的步驟。 在此，所謂吸收性氣體，係對前述既定波長光（在光學 裝置所使用之光）之吸收特性大的氣體之統稱，例如，若 光係波長120nm〜180nm之真空紫外光時，含有將其真空紫 外光強烈地吸收之氧氣、水蒸氣、碳氫化合物等吸光物質 的氣體，則符合於此。在本說明書，由於如上述之意思， 使用「吸收性氣體」術語。又，一般空氣（大氣）因含有氧 氣與水蒸氣，故當作吸收性氣體處理。因此，吸收性氣體 係按照上述之光之波長（既定波長）而不相同。 藉此’遮蔽構件’因至少在前述物體及保持該物體之 保持構件中任一特定物體之間，以形成既定之第丨間隙的 狀態下配置，故藉由將該第丨間隙設定為適當尺寸，能將 200307979 配置於既定波長光之光路上的物體與光學裝置之間的遮蔽 構件内部的空間，以某程度氣密之狀態與外·氣阻隔。並且 ，透過形成於該遮蔽構件内部之空間的供氣用開口，將對 前述光之吸收特性比吸收性氣體低的特定氣體（以下，適 宜稱為「低吸收性氣體」）供應。藉此，能將物體與光學 裝置之間之光路上的空間，即，將遮蔽構件内部之空間的 氣體’置換為低吸收性氣體。藉此，能從空間内排除（清 除）刖述吸收性氣體。因此，配置於光之光路上之物體與 光學裝置之間之空間的南精度氣體置換，則不必使用大型 且重之氣密型遮蔽容器，而能實現。換言之，依本發明， 只要使用能覆蓋光學裝置與物質之間之空間的小型遮蔽構 件，就能達成與使用大型且重之氣密型遮蔽容器時大致相 同之程度的高精度氣體置換。 在此情形，能進-步包含：將前述遮蔽構件内部之空 間的氣體’透過形成於前述遮蔽構件之排氣用開口向外部 排氣的步驟。 發明之第1氣體清除方法，前述間隙 大約3mm以下 —在此情形，能進一步包含：透過在該遮蔽構件之與, 特定物體對向之端面所开彡# , 4面所形成的供氣口，將既定之 於該苐1間隙内，並且使兮笛200307979 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a gas cleaning method, an exposure device, and a device manufacturing method. In detail, it relates to an object and an optical device to be arranged on a light path of a predetermined wavelength Space, a gas removal method for performing gas removal, an exposure device suitable for implementing the gas removal method, and a device manufacturing method using the exposure device. [Prior art] It is known that in the lithography process for manufacturing electronic components such as semiconductor devices (integrated circuits) and liquid crystal display devices, various exposure devices are used to form fine patterns of electronic devices on a substrate. In recent years, especially from the perspective of productivity, it is mainly used to reduce the projection exposure device, which is a mask (mask) formed by enlarging the pattern to be formed by 4 to 5 times-or The pattern of the reticle (hereinafter, collectively referred to as a “reticle”) is reduced by a projection optical system and transferred to an exposed substrate (hereinafter, referred to as a “wafer”) such as a wafer. In this type of projection exposure device, in order to support the miniaturization of integrated circuits, the high-resolution 'has been achieved, and its exposure wavelength has been shifted to a shorter wavelength side. At present, although its wavelength is mainly 248nm of KrF excimer laser light, the shorter wavelength of 193mn of ArF excimer laser light is also gradually entering the practical stage. In addition, a proposal has recently been made for a projection exposure device using vacuum ultraviolet light, which uses a shorter wavelength of 157 nm F2 laser light or a wavelength of 126 nm Arz laser light. The so-called wavelength band called vacuum ultraviolet Light source. 200307979 This type of vacuum ultraviolet light with a wavelength below 180nm will be strongly absorbed by atmospheric oxygen or water vapor. Therefore, an exposure device using vacuum ultraviolet light as the light for exposure is required to use nitrogen, helium, and the like that hardly absorb light for exposure in order to exclude light-absorbing substances such as oxygen and water vapor from the space on the light path of the light for exposure. Rare gases are used for gas replacement (gas removal). For example, in an exposure device using F2 laser light with an emission wavelength of 157 nm as the light source, it is generally considered that most of the optical path from the laser to the wafer needs to suppress the residual oxygen concentration to less than 1 ppm. Also, the two resolutions can be achieved not only with the short wavelength definition of the exposure wavelength, but also with the large numerical aperture (N · A.) Of the optical system. Therefore, recently, the optical system has also been further enhanced with a large N ·. Development of Alpha However, in order to achieve high resolution, in addition to the large N.A. of the projection optical system, it is necessary to reduce the aberration of the projection optical system. Therefore, the wavefront aberration measurement using the interference of light is performed in the process of the projection optical system, the amount of residual aberration is measured with an accuracy of about 1/1000 of the exposure wavelength, and the projection optical system is adjusted based on the measured value. As described above, the larger the N · A · or the lower the aberration, the easier the optical system with the smaller field of view. However, for an exposure device, the larger the field of view (exposure range), the higher the processing capacity (production capacity) is. Therefore, in order to use a projection optical system with a small field of view but a large N · A · and a substantially large exposure range, during the exposure, the reticle and the wafer are scanned relative to each other while maintaining their image relationship. Scanning projection optical systems, such as scanning projection optical systems of scanning and scanning methods (so-called scanning stepper), have become the mainstream recently. 200307979 [Content of the invention] However, the exposure device using the above-mentioned vacuum ultraviolet light as a light source also needs to suppress the residual oxygen or water vapor concentration in the space near the reticle to less than 1 ppm. To achieve this, you can also consider covering the entire reticle stage with a large air-tight shielding container (the reticle stage room) to hold the reticle. Thread) method for the overall gas removal. However, when such a shielding container is used on the right, the exposure device becomes larger and heavier. The footprint of each exposure device in a clean room of a semiconductor factory changes greatly. As equipment costs (or operating costs) increase, As a result, the productivity of the semiconductor device is reduced. In addition, it becomes difficult to approach the reticle, and the workability during maintenance of the reticle stage is reduced, so that the time required for maintenance is increased, and the productivity of the semiconductor device is reduced. The scanning projection exposure device has a large reticle stage due to the high-speed scanning of the reticle during exposure. The shielding container (reticle stage room) that covers the entire large reticle stage becomes Bigger. Also, the gas removal in the space near the reticle is not only a problem of the projection exposure device, but also an inspection optical device mounted on the projection exposure device to measure the aberration of the projection optical system, etc., has also become a problem. In view of the above-mentioned facts, the present invention aims to provide a gas removal method that efficiently replaces a space between an object disposed on a light path of light and an optical device without using a large and heavy airtight Sexually shade the container. The second purpose of μ Ben & Shoming is to provide an exposure device that can suppress the enlargement and weight of the 200307979 device and improve the exposure accuracy. A third object of the present invention is to provide a component manufacturing method capable of improving the productivity of components with a high degree of integration. The gas removing method of the present invention is to remove gas from a space between an object and an optical device arranged on a light path of a predetermined wavelength, and includes the following steps: at least with the object and a holding member holding the object A step of arranging a shielding member that blocks the space between the optical device and the object from outside air in a state where a predetermined first gap is formed between any one of the specific objects; and the absorption characteristic of the light is higher than that of the absorbing gas A step of supplying a low specific gas through an opening for gas supply formed in the shielding member and supplying the low specific gas to a space inside the shielding member. Here, the so-called absorptive gas is a general name for a gas having a large absorption characteristic for light of a predetermined wavelength (light used in an optical device). For example, if the light is a vacuum ultraviolet light having a wavelength of 120 nm to 180 nm, Gases that absorb light, such as oxygen, water vapor, and hydrocarbons, that are strongly absorbed by vacuum ultraviolet light, are in line with this. In this specification, the term "absorptive gas" is used as described above. In addition, general air (atmosphere) contains oxygen and water vapor, so it is treated as an absorbent gas. Therefore, the absorptive gas is different depending on the wavelength (predetermined wavelength) of the light described above. Therefore, since the "shielding member" is arranged at least between the aforementioned object and any specific object of the holding member holding the object to form a predetermined first gap, the first gap is set to an appropriate size. The space inside the shielding member between the object and the optical device that can be placed on the light path of a predetermined wavelength in 200307979 can be blocked to the outside by the air in a certain degree of airtightness. Then, a specific gas (hereinafter, referred to as a "low-absorptive gas") having a lower absorption characteristic with respect to the light than the absorbent gas is supplied through the gas supply opening formed in the space inside the shielding member. Thereby, the space on the optical path between the object and the optical device, that is, the gas' that shields the space inside the member can be replaced with a low-absorptive gas. Thereby, it is possible to exclude (remove) the above-mentioned absorptive gas from the space. Therefore, the South-precision gas replacement in the space between the object disposed on the light path and the optical device can be realized without using a large and heavy air-tight shielding container. In other words, according to the present invention, by using a small shielding member that can cover the space between the optical device and the substance, high-precision gas replacement can be achieved to the same degree as when a large and heavy airtight shielding container is used. In this case, the method can further include a step of exhausting a gas' in the space inside the shielding member to the outside through the exhaust opening formed in the shielding member. The first gas removal method of the invention, the gap is about 3 mm or less-in this case, it may further include: a gas supply port formed by opening # 4 on the end face of the specific object opposite to the shielding member, Put the given in the gap of 苐 1, and make the flute

於該端面之該空門传位二：間隙内之氣體，細“ 氣的步^^間係位於該供氣口外侧的排氣口向夕MM 前述遮蔽構件，係用 在本發明之第1氣體清除方法 10 200307979 來減低對前述光學裝置之振動傳達，較佳者為前述遮蔽構 、 件，在與則述光學裝置之間，能以形成既定之第2間隙之 狀態下配置。 在此情形’前述第2間隙，能形成為大約3mm以下。 在此If形，能進一步包含··透過在該遮蔽構件之與該 光學裝置對向之端面所形成的供氣口，將既定之氣體供應 於該第2間_，並且將該第2間隙内之氣體，對該端面 之工間透過形成於該供氣口外側的排氣口向外部排氣的步 驟。 鲁 本發明之氣體清除方法，從第2觀點來看，係將包含 使用於光學裝置（具有照射既定波長光之光㈣統）的光檢 測益之受光面的空間進行氣體清除，其係包含以下步驟： 將保持構件（-面形成開口且在内部將該光檢測器以《 光面朝該開口的方式收容）之該開口周圍的端面，透過密 封構件而與該光學裝置之構成零件之一部分結合，以純 ' 含该光檢測器之受光面之空間與外氣阻隔之步驟；及 將對該光之吸收特性比吸收性氣體低的特定氣體，透鲁 • $成於該構成零件、及保持構件中任__者的供氣用開口 供應於該空間，而將該空間内之氣體，透過形成於該構成 零件、及保持構件中任一者的排氣用開口向外部排氣之步 驟。 藉此’將保持構件（-面形成開口且在内部將該光檢測 盗以受光面朝該開σ的方式收容）之前述開口周圍的端面 ’透過密封構件結合於前述光學褒置之構成零件之-部分 11 200307979 ’將包含前述光檢測器之受光面的空間與外氣阻隔。因此 ，包含由光學裝置之構成零件及保持構件所構成的光檢測 器之受光面的空間，則變成氣密性良好之空間。並且，將 對照射於光學裝置，透過該光學裝置之光學系統射入於受 光元件的光之吸收特性，比吸收性氣體低的特定氣體（低 吸收性氣體），透過形成於前述構成零件及前述保持構件 中任一者的供氣用開口供應於前述空間，而將該空間内之 氣體，透過形成於前述構成零件及前述保持構件中任一者 的排氣用開口向外部排氣。藉此，從光學裝置至光檢測器 之受光面為止之間之空間内部的氣體，會被特定氣體置換 ，透過光學裝置射人於前述空間内之後而射出之既定波長 的先以光檢測器之受光面接受為止以前，在空間内部幾乎 不會被吸收。因此，能精度良好地進行光檢測器之光量檢 測依據該光1檢測之結果，例如要進行光學裝置之 特性測量等時，能提高該測量精度。 予 在此情形，能進一步包合·户 檢測5|之邱八 ^ •在4保持構件之載置該光 才双測益之邛刀，預先形成貫通孔的步驟；及 :該光檢測器之背面側，透過該貫通孔，將來 才欢測益之電氣配線向外部拉出的步驟。 Μ 在本發明之第2氣體清除方法，能 前述保持構件的步驟。 7匕3 •冷部 在此情形，前述保持構件 件之前述綠_目反側持構 在此情形，能進一步包含連:::帖元件來進行。 .將刖迷珀耳帖元件之與前 12 200307979 述保持構件相反側冷卻的步驟。 、，在本毛B月之第2氣體清除方法，能進一步包含··在該 光子袭置之忒構成零件（與保持構件結合）之與該保持構件 相反側配置光透過性構件，將包含該光檢測器之受光面之 空間分隔成複數個空間的步驟。 本發明，從第3觀點來看，係一種曝光裝置，用以將 形成於光罩之圖案轉印於基板上，其係具備： 照明光學系統，係用來以既定波長光照明該光罩； 第1遮蔽構件，係配置於該光罩、及保持該光罩之光鲁 罩保持構件中任一特定物體與該照明光學系統之間，以至 少在與該特定物體之間形成既定之第丨間隙之狀態下，將 該光罩之該照明光學系統側之至少包含對應該光罩之圖案 領域的領域之第1空間與外氣阻隔；及 第1氟體供應系統，係透過形成於該第1遮蔽構件之 供氣用開口，將對該光之吸收特性比吸收性氣體低的特定 氣體供應於該第1空間。 藉此，藉由在光罩及光罩保持構件中任一特定物體與 ® 照明光學系統之間，以形成既定之第丨間隙之狀態下配置 的第1遮蔽構件，將包含光罩之照明光學系統側之至少對 應光罩之圖案領域的領域之第1空間與外氣阻隔。並且， 藉由第1氣體供應系統，透過形成於第1遮蔽構件之供氣 用開口’將對既定波長光（曝光用光）之吸收特性比吸收性 氣體低的特定氣體供應於前述第丨空間。藉此，能將第J 空間内之氣體置換為特定氣體。因此，能從第1空間内排 13 200307979 除吸收曝光用光之吸收性氣體，因從照明光學系統所照射 之光，幾乎不會被吸收而照射光罩，故能抑制曝光用光之 透過率之降低，而實現高精度之曝光。在此情形，僅使用 能覆蓋照明光學系統與光罩或光罩保持構件之間之第丨空 間的小型帛1遮蔽構件，就能達成與使用大型且重的氣密 型遮蔽容器（光罩載台室）時大致相同程度之效率良好的氣 體置換。因此，能抑制裝置之大型化、重量化。 在此情形，能進-步具備··投影光學系統，係用以將 從該光罩射出之光投射於該基板上； 第2遮蔽構件，係配置於該特定物體與該投影光學系 統之間，在減低對該投影光學系統之振動傳達之狀態下， 將孩光罩之该投影光學系統側之至少包含該光罩之圖案領 域之第2空間與外氣阻隔；及 第2氣體供應系統，係透過形成於該第2遮蔽構件之 供氣用開口將該特定氣體供應於該第2空間。 在此h形，第2遮蔽構件，較佳者為以至少在與前述 特定物體之間形成既定的第2間隙之狀態配置。 又，在此情形，如申請專利範圍第18項之曝光裝置， 能進一步具備： 第1氣體排氣系統，係透過形成於該第i遮蔽構件之 排氣用開口將該第1空間内之氣體向外部排氣；及 第2氣體排氣系統，係透過形成於該第2遮蔽構件之 排氣用開口將該第2空間内之氣體向外部排氣。 在本發明之曝光裝置，前述第丨及第2間隙之至少一 200307979 方，能形成為大約3mm以下。 …在此情形，能進一步具備：差動排氣機構，從形成於 該第1遮蔽構件之與該特定物體對向之端面的供氣口，將 既定之氣體透過相對於該端面之第丨㈣係位於該供氣口 外侧的排氣口向外部排氣。 在本發明之曝光裝置，若前述第1及第2間隙之至少 一方係大'約3咖以下時’能進-步具備：差動排氣機構， ㈣成於該第2遮蔽構件之與該特定物體對向之端面的供 氧口’將既定之氣體向該特定物體供應，並且將㈣2間 隙内之氣體透過相對於該端面之帛2㈣係位於該供氣口 外側的排氣口向外部排氣。 +ί在本發明之曝光裝置，若具備第1遮蔽構件及第2遮 蔽構件時，能進一步具備以下兩調整機構之一：設置於該 :1遮蔽構件之特定物體侧之端部，且能將該帛】間隙在 =1遮蔽構件全周進行調整的調整機構；以及設置於該 第2遮蔽構件之料物體側之端部，且能將該帛2間隙在 該第2遮蔽構件全周進行調整的調整機構。 在本發明之曝光裝置 埏敝稱仟興前划 奶你則述第 l 投影光學系統之間，形成既定之第3間隙 ^本發明之曝光裝置’若在前述第2遮蔽構件與前述 =光學系統之間形成第3間隙時，能進一步具備：差動 ^機構，從形成㈣第2遮蔽構件之與該投影光學系統 子向之端面的供氣口，將既定之氣體向該帛3間隙内供應 並且將該第3間隙内之氣體透過相對於該端面之第2空 15 200307979 間係位於該供氣口外側的排氣口向外部排氣。 在此情形，前述第3間隙，处π上、& ’、犯形成為大約3mm以下。 在本發明之曝光裝置， 筮9 ☆叶* 示第1遮蔽構件外另加上具備 苐2遮蔽構件，能進一步且 ，、備 I Φ it ^ ^ . 差動排乳機構，從形成於 $第2遮蔽構件之與該投 ，骆w A 尤予糸統對向之端面的供氣口 將既疋之氣體向該第3間审 1隙内供應，並且將該第3間隙 内之虱體透過相對於該端面第 ’、 ,9lI . ..„ ^ 弟2工間係位於該供氣口外 側的排氣口向外部排氣。 體對之曝光裝置，該第1輕構件之與該特定物 體對向之端面及㈣2遮蔽構件之與該特定物體對向之端 面係均為平面，分別盘此蓉诚 皆係平面。刀I、此專鳊面對向之該特定物體之面亦 又，能進-步具備：基板保持構件，係用來保持該基 板’及驅動裝置’係、包含將該光罩保持構件沿㈣掃描方 向驅動之驅動源’將該光罩保持構件與該基板保持構朴 既定掃描方向同步移動；將該驅動源之至少—部分，配置 於該第1空間及第2空間之外部。 在本發明之曝光裝置，若具備··將光罩保持構件與基 板保持構件同步移動於既定掃描方向之驅動裝i時，該^ 1遮蔽構件之掃描方向之長度，係至少依據··在進行該曝 光之同步移動時前後之加速域與減速域中，該光罩保持構 件所移動之助行距離；及該光罩之圖案領域之掃描方向的 長度來決定。 在本發明之曝光裝置，能進一步具備：第3遮蔽構件 200307979 ’配置於該基板與投影光學系統之間’以至少在與該基板 成无疋之帛3 Fd隙之狀態下，將該基板之投影光學 系、、先側之f 3空間與外氣阻隔；及第3氣體供應系統，透 "成；“第3遮蔽構件之供氣用開口將該特定氣體供應 於該第3空間。 ▲、在此情形，能進一步具備：差動排氣機構，從形成於 ，，第3遮蔽構件之與前述基板對向之端面的供氣口，將 :之氣體t、應於前述第3間隙，同時將前述第3間隙内 之乳體，透過相對於前述端面之前述帛3空間係位於前述 供氣口外側的排氣口向外部排氣。 又本發明之曝光裝置，在前述第1遮蔽構件與前述 照明光學系統之間，能將對照明光學系統之振動傳達減低 。即’在帛1冑蔽構件與前述照明光學系統之間，能形成 既定之第2間隙。 …在本發明之曝光裝置，能進-步具備：差動排氣機構 攸形成於刚述第丨遮蔽構件之與前述照明光學系統對向 t端面的供氣口，將既定之氣體供應於前述第2間隙，同 守等别述第2間隙内之氣體，透過相對於前述端面之前述 第1空間係位於前述供氣口外側的排氣口向外部排氣。 在本發明之曝光裝置，能具有：遮蔽構件，配置於前 =基板與前述投影光學系統之間，而不與前述基板與前述 才又衫光學系統接觸，將前述基板與前述投影光學系統之間 之包含前述曝光光束之光路的空間與外氣阻隔。 又，在微影製程，藉由使用本發明之曝光裝置進行曝 17 200307979 光，則能在基板上精度良好地形成圖案，藉此，能將更高 積體度之微元件以良好之合格率製造。因此，更從別之觀 點來看，本發明亦能稱為使用本發明之曝光裝置的元件製 造方法。 【實施方式】 第1實施形態 以下，依圖卜圖7(B)說明本發明之第丨實施形態。 在圖1，概略地表示本第丨實施形態之曝光裝置1〇〇 之構成。此曝光裝置1 〇〇，係步進掃描方式之投影曝光裝 _ 置，即所谓掃描步進機，將作為能量束之曝光用照明光EL 照射於光罩之標線片R，將該標線片R與作為基板之晶圓w 沿既定之掃描方向（在此，係在圖丨與紙面正交方向之γ軸 方向）同步移動，將標線片r之圖案透過投影光學系統 轉印於晶圓W上複數個照射領域。 此曝光裝置100，係包含未圖示之光源及作為光學裝 置（照明光學系統）之照明單元ILU，具備：照明系統，以 曝光用照明光（以下，稱為「曝光用光」）EL照明標線片R · ，標線片載台RST，用來保持標線片R之光罩保持構件； 技衫光學系統PL，將從標線片R射出之曝光用光EL投射 於晶圓W上；晶圓載台WST，用來保持晶圓w之基板保持 構件；此等之控制系統；及支持架台肋等，用來支持構成 各部。 前述支持架台BD，係具備：第】架台34,具有複數個 (在此，例如3個或4個）腳部34A(透過複數個（在此，例 18 200307979 如3個或4個）第i防振單元43設置於淨潔室地板卩上）， 與鏡㈣（亦稱為主架）34B(以該腳部34A大致水平地支撑） ’及第2架台32’具有複數個支持構件21(設置於構成該 苐1架台34天板之鏡筒盤34B上面且沿z軸方向延伸）， 與標線片載台盤27(以該複數個支持構件21支撐使其上面 大致水平）。在第i架台34之鏡筒盤3铛下方透過複數 個第2防振單元41將平板狀晶圓載台底座bs(將上面設定 為高平坦度）配設於地板F上方。 前述光源，在此，係使用發射屬於波長約12〇nm〜約 180mn之真空紫外域之光的光源，例如輸出波長l5?nm之 氟雷射光（F2雷射光光源，係透過將光軸調整用光學系 統（稱為光束調整組）包括在一部分的未圖示之送光光學系 統，連接於構成照明單元ILU之照明系統殼2的一端。照 明系統殼2，實際上’係具有全體大致l字狀之形狀，沿 圖1紙面後侧延伸既定距離，從該處沿下方延伸。 前述光源，實際上，係設置於與潔淨室（設置包含照明 單元ILU及投影光學系統PL等在内之曝光裝置本體）另外 之低潔淨度之服務室，或是潔淨室地板下之公用設施區域 等。又，光源，亦可使用輸出波長Μδηιη之氪二聚體 (Krypton dimer)雷射光（Kr2雷射光）、輸出波長126nm之 氬二聚體（Argon dimer)雷射光（Ar2雷射光）等其他真空紫 外光源，或是，亦可使用輸出波長193nm之ArF準分子雷 射光、輸出波長248nm之KrF準分子雷射光等。 前述照明單元ILU，係構成為包含：照明系統殼2，用 200307979 以將内部從外部隔離；及照明光學系統，由照度均勻化光 學系統（包含以既定之位置關係配置於殼内部之光學積分 器在内）、中繼透鏡、可變ND濾光片、標線片遮簾、及光 路繞射用鏡荨（均未圖示）組成。又，光學積分器，係使用 複眼透鏡，桿式積分器（内面反射型積分器），或繞射光學 元件等。本實施形態之照明單元，係例如與揭示於曰本專 利特開平6—349m號公報等之構成相同之構成。在照明 單元ILU，將形成電路圖案等之標線片R上之狹縫狀照明 領域（前述標線片遮簾所限制且沿χ軸方向延伸細長之狹縫 狀領域）’藉由曝光用光EL以大致均勻之照度照明。 又，在照明系統殼2内之標線片R側端部附近，如圖 酉己°又平板狀之光透過窗構# 20。此光透過窗構件 係具有使來自照明單元則之曝光用光EL透過，並且 =照明系統殼2内為氣密狀態的機能。又，光透 不限定於平板狀者’ #由將構成照明單元旧 =密地固定於照明系統殼2，以該 過窗構件之代替亦可。 昭声约成上述照明單元1LU之光學構件中，透鏡或如 :度:句化光學系統、光透過窗構件2。等透過曝光用光 L之構件材料，較佳者為例 ： 率之螢石。但是，在—邱八 了具工系外先具间透過 10卿以下程度，而含有氟;^亦可使用將氮氧基排除至 石英）。又，並不限於氟拎雜。壬度之乱摻雜石英(所謂變性 或僅是氫氧基少之石英^石英，亦能使用通常之石英 、進一步添加氫氣之石英。又，亦 20 200307979 可使用氣化鎂、氟化鋰等之氟化物結晶。 又’在前述送光光學系統或照明單元ILU内之維護時 ，為避免從外部滲入之空氣，擴散至維護對象之空間以外 在匕光光學系統與照明單元ILU之邊界部分，設置分隔 窗亦可。又，亦可將上述之分隔窗，以設置於送光光學系 、、先與”、、明單元1LU内之任意光學構件代用，將送光光學系 統與照明單元ILU内分離為複數個氣密空間。 刖述払線片載台RST，係具有俯視（從上方看）呈矩形 之形狀，在構成第2架台32之標線片載台盤27上方，透 過未圖示之氣體靜壓軸承浮起支撐。在標線片載台rst之 中央部，如從圖1之標線片R附近之放大截面圖得知，形 成俯視（從上方看）呈矩形之附段開口 53，在該附段開口 53 内緣部附近之複數個部位設置更高一階之真空吸附部 。藉由分別設置於此等複數個真空吸附部53a之未圖示的 真空吸附機構（真空夾具），將標線片附保持。在此標 線片R之圖案面（下面），設置矩形狀之薄膜架57及貼附在 該薄膜架57下面之薄m 56。藉由薄膜56能防止對圖案面 塵埃等之附著。 μ 在標線片載台RST之X軸方向兩端部，如圖j所示， 设置Y軸線性馬達（作為驅動裝置）24A、24B個別之動子 25a、25b。Y轴線性馬達24A、24B之定子26a、26b，係以 既定長度延設於Y軸方向。此等定子26a、26b，係與前述 支持架台BD另外固定於地板F，分別以馬達支持構件Μ、 、31b(將上下方向當作長邊方向而配置）支撐。在此情形，a 21 200307979 動子25a、25b，係藉由分別在定子26a、26b間所產生之 電磁力，沿Y軸方向驅動，藉此標線片載台RST，在標線 片載台盤2 7上以既定行程沿Y軸方向驅動。又，標線片載 台RST，係構成為藉由使Y軸線性馬達24A、24B之產生推 力猶微不相同’而能在XY面内作微小驅動（含旋轉）。 又，在上述，Y軸線性馬達24A、24B之定子26a、26b 係透過馬達支持構件31a、31b在地板f上方支撐，而將定 子所產生之振動透過馬達支持構件31 a、31 b向地板側釋放 的構成說明。然而，不限於此，例如，亦可將定子2 β a、 26b及標線片載台盤27，對各支持構件透過氣體靜壓軸承 浮起支撐。若如此作，則按照標線片載台RST驅動時之反 作用力而驅動定子26a、26b，保存包含標線片載台RST、 定子在内之系統的運動量，而能防止起因於上述反作用力 之定子之振動。又，在此情形，因亦不產生重心之移動， 故亦能防止所謂偏載重之產生。 又’疋子連接於標線片載台盤2 7上時，藉由將標線片 載台盤27與前述同樣構成為對支持構件能相對移動，同樣 能有效地抑制標線片載台盤27之振動。藉此，能使伴隨標 線片載台RST沿Y轴方向驅動所產生的反作用力給與投影 光學系統PL之影響減輕。 前述標線片載台RST，如圖3(A)所示，在其上面之—γ 側端部，將沿X轴方向延伸之平面鏡所組成之標線片γ移 動鏡37Υ固定，對該移動鏡37γ，將來自設置於標線片載 台盤27之標線片γ干涉計3〇的測長光束垂直照射。又， 22 200307979 二前：標線片載台RST上面之—x側端部附近，將沿γ轴 ^ ♦之平面鏡所組成之標線片X移動鏡37Χ固定，對 :移動鏡37Χ，將來自未圖示之標線片χ干涉計的測長光 束垂直照射。 藉由此等標線片Υ干涉計30、標線片X干涉計，將標 敦片載。RST之γ軸方向位置、X軸方向位置，例如能以 • inm程度之分解能分別經常檢測。 ^ 、又，例如，亦可將標線片載台RST之端面鏡面加工來 形j反射面（相當於前述移動鏡之反射面）。又，替代用來 作“線片載台RST掃描方向（在本實施形態係γ軸方向）之 位置檢測的移動鏡37Υ，亦可使用至少i個直角反射型鏡（At the end of the empty door, the second pass: the gas in the gap, and the steps of the air ^^ are the exhaust ports located outside the air supply port. The aforementioned shielding members are used in the first gas of the present invention. Removal method 10 200307979 to reduce the transmission of vibration to the aforementioned optical device, preferably the aforementioned shielding structure and component, which can be arranged in a state of forming a predetermined second gap between the optical device and the optical device. In this case ' The second gap can be formed to about 3 mm or less. Here, the If-shape can further include a predetermined gas supply through the air supply port formed on the end face of the shielding member facing the optical device. The second room, and the step of exhausting the gas in the second gap to the outside of the end face through the exhaust port formed on the outside of the air supply port to the outside. From a viewpoint, the gas removal of the space containing the light receiving surface of the photodetection benefit of an optical device (having a light system that irradiates light of a predetermined wavelength) includes the following steps: forming a holding member (-surface to form an opening And Internally, the end surface around the opening of the photodetector is "contained in such a way that the light surface faces the opening", and is combined with a part of the constituent parts of the optical device through a sealing member, and the light receiving surface containing the photodetector is purely The step of blocking the space from the outside air; and a specific gas that will have a lower absorption characteristic of the light than the absorbing gas, and will be supplied through the gas supply opening of any of the constituent parts and holding members A step of exhausting the gas in the space through the exhaust opening formed in any one of the constituent parts and the holding member to the space. This' forms the holding member (-face into an opening and Internally, the photodetector is housed in such a way that the light receiving surface faces the opening σ). The end face around the aforementioned opening is 'combined with the component of the aforementioned optical arrangement through a sealing member-part 11 200307979' will contain the aforementioned photodetector. The space of the light-receiving surface is blocked from the outside air. Therefore, the space including the light-receiving surface of the photodetector composed of the components and holding members of the optical device becomes air-tight. In addition, a specific gas (low-absorptive gas) having an absorption characteristic of light that is incident on the optical device and penetrates the light-receiving element through the optical system of the optical device and is lower than the absorbent gas is transmitted through the aforementioned component. The air supply opening of any one of the holding members and the holding member is supplied to the space, and the gas in the space is exhausted to the outside through the exhaust opening formed in either of the constituent parts and the holding member. As a result, the gas in the space from the optical device to the light receiving surface of the photodetector will be replaced by a specific gas, and the light emitted by the optical device after entering the space will be emitted by the photodetector first. Until the light-receiving surface accepts, it will hardly be absorbed in the space. Therefore, the light amount detection of the photodetector can be performed with high accuracy. Based on the result of the light 1 detection, for example, when the characteristic measurement of the optical device is to be performed, it can be improved. measurement accuracy. In this case, it is possible to further include the household inspection 5 | Qiu Ba ^ • the step of forming a through-hole in advance by placing the light on the 4 holding member and double measuring the benefit; and: the photodetector On the back side, through this through hole, the step of pulling out the electric wiring of Yiyi to the outside will be tested in the future. Μ In the second gas removal method of the present invention, the aforementioned step of holding the member can be performed. 7 dagger 3 • Cold section In this case, the aforementioned green_mesh side-side holding structure of the aforementioned holding member can be further performed in this case by including a chain ::: element. A step of cooling the Peltier element on the opposite side of the holding member described in the previous 12 200307979. In the second gas removal method in this month, the method can further include: arranging a light-transmitting member on the opposite side of the holding member (combined with the holding member) of the photon strike member (combined with the holding member), and including the The step of dividing the space of the light receiving surface of the photodetector into a plurality of spaces. According to a third aspect of the present invention, an exposure device for transferring a pattern formed on a photomask onto a substrate is provided. The device includes: an illumination optical system for illuminating the photomask with light of a predetermined wavelength; The first shielding member is disposed between the specific object in the reticle and the optical mask holding member holding the reticle and the illumination optical system so as to form a predetermined first at least with the specific object. In the state of the gap, the first space and the outside air barrier of at least the area corresponding to the pattern area of the mask of the illumination optical system side of the mask; and the first fluorine gas supply system is formed through the first 1 The air supply opening of the shielding member supplies a specific gas having a light absorption characteristic lower than that of the absorptive gas to the first space. With this, the first shielding member disposed under a state where a predetermined first gap is formed between any specific object in the mask and the mask holding member and the ® illumination optical system, the illumination optics including the mask The first space on the system side corresponding to at least the pattern area of the photomask is blocked from outside air. In addition, the first gas supply system supplies a specific gas having a lower absorption characteristic to light of a predetermined wavelength (exposure light) than an absorptive gas to the first space through the gas supply opening formed in the first shielding member. . Thereby, the gas in the Jth space can be replaced with a specific gas. Therefore, 13 200307979 can be discharged from the first space. Absorptive gas that absorbs exposure light can be discharged. Since the light irradiated from the illumination optical system is hardly absorbed, the photomask is irradiated, so the transmittance of exposure light can be suppressed. It is reduced, and high-precision exposure is achieved. In this case, using only a small 帛 1 shielding member that covers the space between the illumination optical system and the mask or the mask holding member, a large and heavy airtight shielding container Table)), with approximately the same degree of efficient gas replacement. Therefore, the size and weight of the device can be suppressed. In this case, it is possible to further include a projection optical system for projecting light emitted from the photomask onto the substrate; a second shielding member disposed between the specific object and the projection optical system , In a state where vibration transmission to the projection optical system is reduced, the second space of the projection optical system side of the child mask including at least the pattern area of the mask is blocked from outside air; and the second gas supply system, The specific gas is supplied to the second space through an air supply opening formed in the second shielding member. In this h-shape, the second shielding member is preferably arranged in a state where a predetermined second gap is formed at least with the specific object. In this case, as for the exposure device in the 18th scope of the patent application, it may further include: a first gas exhaust system that passes the gas in the first space through the exhaust opening formed in the i-th shielding member; Exhaust to the outside; and a second gas exhaust system to exhaust the gas in the second space to the outside through an exhaust opening formed in the second shielding member. In the exposure apparatus of the present invention, at least one 200307979 square of the first and second gaps can be formed to about 3 mm or less. … In this case, it may further include: a differential exhaust mechanism that transmits a predetermined gas from an air supply port formed on an end surface of the first shielding member facing the specific object, and passes a predetermined gas through the first end of the first shielding member. An exhaust port located outside the air supply port is exhausted to the outside. In the exposure apparatus of the present invention, if at least one of the first and second gaps is larger than 'about 3 coffee or less', it can be further provided with: a differential exhaust mechanism formed between the second shielding member and the second shielding member. The oxygen supply port on the end face of the specific object is to supply a predetermined gas to the specific object, and the gas in the gap of ㈣2 is exhausted to the outside through the 口 2㈣ which is located outside the air supply port with respect to the end face. gas. + In the exposure device of the present invention, if the first shielding member and the second shielding member are provided, one of the following two adjustment mechanisms can be further provided: the end portion of the specific object side of the: 1 shielding member, and the帛] An adjusting mechanism for adjusting the clearance at = 1 the entire circumference of the shielding member; and an end portion provided on the material object side of the second shielding member, and the 帛 2 clearance can be adjusted at the entire circumference of the second shielding member Adjustment mechanism. In the exposure device of the present invention, it is said that the first projection optical system forms a predetermined third gap between the first projection optical system and the exposure device of the present invention. When a third gap is formed therebetween, it may further include: a differential ^ mechanism for supplying a predetermined gas into the 帛 3 gap from an air supply port forming a ㈣2 shielding member and an end face of the projection optical system. And the gas in the third gap is exhausted to the outside through an exhaust port located outside the air supply port between the second space 15 200307979 with respect to the end face. In this case, the above-mentioned third gap is formed at about π, & ', and is formed at about 3 mm or less. In the exposure device of the present invention, 筮 9 ☆ 叶 * shows that the first shielding member is additionally provided with a 苐 2 shielding member, which can further, and prepare, I Φ it ^ ^. The differential milk ejection mechanism is formed from the first 2 With the shielding member, Luo W A, especially the gas supply port on the opposite end of the system, supplies the existing gas to the third interrogation gap, and penetrates the lice in the third interspace. With respect to the end face, the first, second, and 9lI... „^ The second room is an exhaust port located outside the air supply port to the outside. The exposure device for the body, the first light member and the specific object The facing end surface and the facing end of the shielding member facing the specific object are all planes, and the Rongcheng are planes, respectively. The knife I and the surface facing the specific object are also A further step includes: a substrate holding member for holding the substrate and the driving device, and a driving source including driving the photomask holding member in the ㈣ scan direction. The photomask holding member and the substrate are held in a simple structure. Synchronized movement in a predetermined scanning direction; at least-part of the driving source is arranged in the first Outside the first space and the second space. If the exposure device of the present invention is provided with a driving device i that moves the mask holding member and the substrate holding member in a predetermined scanning direction, the scanning direction of the ^ 1 shielding member The length is determined at least according to the travel distance of the mask holding member in the acceleration and deceleration fields before and after the synchronous movement of the exposure; and the length of the scanning direction of the pattern area of the mask. The exposure apparatus of the present invention may further include: a third shielding member 200307979 'positioned between the substrate and the projection optical system' so that the substrate is at least in a state of 3 Fd gap with the substrate at least. The projection optical system, the f 3 space on the front side, and the outside air are blocked; and the third gas supply system is transparent; "the gas supply opening of the third shielding member supplies the specific gas to the third space. ▲ In this case, it can further include: a differential exhaust mechanism, from the air supply opening formed on the end face of the third shielding member facing the substrate, the gas t should be in the third gap. At the same time, the milk in the third gap is exhausted to the outside through an exhaust port located outside the air supply port through the space 帛 3 with respect to the end surface. Furthermore, the exposure apparatus of the present invention can reduce vibration transmission to the illumination optical system between the first shielding member and the illumination optical system. That is, a predetermined second gap can be formed between the "1" shielding member and the aforementioned illumination optical system. ... The exposure device of the present invention can further include: a differential exhaust mechanism formed at the air supply port facing the end face of the above-mentioned shielding member facing the illumination optical system, and supplying a predetermined gas to the aforementioned In the second gap, the gas in the second gap, such as the same guard, is exhausted to the outside through an exhaust port located outside the air supply port in the first space relative to the end face. In the exposure apparatus of the present invention, it is possible to include a shielding member disposed between the front substrate and the projection optical system without contacting the substrate and the optical shirt optical system, and placing the substrate between the substrate and the projection optical system. The space containing the light path of the exposure beam is blocked from outside air. In addition, in the lithography process, by using the exposure device of the present invention to perform exposure on the 2003 200307979 light, a pattern can be accurately formed on the substrate, thereby enabling higher integration of micro-elements with a good pass rate. Manufacturing. Therefore, from another point of view, the present invention can also be referred to as a device manufacturing method using the exposure apparatus of the present invention. [Embodiment] First Embodiment Hereinafter, a seventh embodiment of the present invention will be described with reference to FIG. 7 (B). FIG. 1 schematically shows the configuration of an exposure apparatus 100 according to the first embodiment. This exposure device 100 is a projection exposure device of a step-and-scan method, a so-called scanning stepper, which irradiates the exposure illumination light EL, which is an energy beam, to a reticle R of a photomask, and reticles the reticle. The sheet R and the wafer w as the substrate move synchronously along a predetermined scanning direction (here, in the direction of the γ-axis orthogonal to the drawing), and the pattern of the reticle r is transferred to the crystal through the projection optical system. A plurality of irradiation areas are on the circle W. This exposure device 100 includes an unillustrated light source and an illumination unit ILU as an optical device (illumination optical system), and includes: an illumination system that uses an illumination light for exposure (hereinafter, referred to as "exposure light") EL illumination target The reticle R ·, the reticle stage RST, is used to hold a mask holding member of the reticle R; the shirt optical system PL projects the exposure light EL emitted from the reticle R onto the wafer W; The wafer stage WST is used to hold the substrate holding members of the wafer w; these control systems; and the support rack ribs are used to support the constituent parts. The aforementioned support stand BD is provided with: the first] stand 34, which has a plurality of (here, for example, 3 or 4) feet 34A (through a plurality (here, Example 18 200307979, such as 3 or 4)) The anti-vibration unit 43 is provided on the clean room floor 卩), and the mirror ㈣ (also referred to as the main frame) 34B (supported approximately horizontally by the leg portion 34A) 'and the second stand 32' have a plurality of supporting members 21 ( It is installed on the lens plate 34B constituting the first plate 34 and extends along the z-axis direction, and the reticle stage plate 27 (supported by the plurality of support members 21 so that the upper surface is substantially horizontal). The flat wafer stage base bs (the upper surface is set to a high flatness) is arranged above the floor F under the barrel 3 of the i-th stage 34 through a plurality of second vibration isolation units 41. The aforementioned light source here is a light source that emits light belonging to a vacuum ultraviolet region with a wavelength of about 120 nm to about 180 mn, such as a fluorine laser light (F2 laser light source with an output wavelength of 15 nm), which is used to adjust the optical axis. The optical system (referred to as a beam adjustment group) includes a part of a light-transmitting optical system (not shown) connected to one end of the lighting system housing 2 constituting the lighting unit ILU. The lighting system housing 2 actually has an overall shape of "l". This shape extends a predetermined distance along the rear side of the paper surface from Fig. 1, and extends downward from there. Actually, the aforementioned light source is installed in a clean room (exposure device including lighting unit ILU and projection optical system PL, etc.) (Main body) Another service room with low cleanliness, or public facilities area under the floor of the clean room, etc. In addition, the light source can also use Krypton dimer laser light (Kr2 laser light) with an output wavelength Μδηιη, Argon dimer laser (Ar2 laser) and other vacuum ultraviolet light sources with an output wavelength of 126nm, or an ArF excimer laser with an output wavelength of 193nm can also be used KrF excimer laser light with an output wavelength of 248 nm, etc. The aforementioned lighting unit ILU is composed of: a lighting system housing 2 that uses 200307979 to isolate the inside from the outside; and an illumination optical system that consists of an illumination uniformity optical system (including The predetermined positional relationship is arranged in the optical integrator inside the case), the relay lens, the variable ND filter, the reticle curtain, and the optical path diffraction mirror (all not shown). Also, The optical integrator uses a fly-eye lens, a rod integrator (inside reflection integrator), or a diffractive optical element. The lighting unit of this embodiment is, for example, disclosed in Japanese Patent Application Laid-Open No. 6-349m. The lighting unit ILU has a slit-shaped lighting area on the reticle R forming a circuit pattern (the reticle-shaped area restricted by the reticle curtain and extending along the χ-axis direction) ) 'Is illuminated by the exposure light EL at a substantially uniform illuminance. Also, near the end of the reticle R side in the lighting system casing 2, as shown in FIG. 2, the flat light passes through the window structure # 20. This Light transmission The window member has a function of transmitting the exposure light EL from the lighting unit, and the airtight state in the lighting system casing 2. The light transmission is not limited to a flat plate. It is fixed to the lighting system housing 2 and can be replaced by the window-passing member. In the optical member of Zhaosheng about the above-mentioned lighting unit 1LU, the lens may be such as: degree: sentence optical system, light transmitted through the window member 2. etc. The material of the exposure light L, the better one is the example: the rate of fluorite. However, outside the Qiu Ba Liao Gong Department of the first transmission between 10 degrees or less, and contains fluorine; ^ can also be used nitrogen Base excluded to quartz). It is not limited to fluorine doping. Rendezvous chaos doped quartz (so-called denatured or only quartz with few hydroxyl groups ^ quartz, ordinary quartz, and further hydrogen-added quartz can also be used. Also, 20 200307979 can use magnesium gas, lithium fluoride, etc. In addition, during the maintenance of the aforementioned light-transmitting optical system or lighting unit ILU, in order to prevent the air infiltrated from the outside from diffusing outside the space to be maintained, the boundary portion between the optical-optical system and the lighting unit ILU, A partition window may also be provided. Alternatively, the above-mentioned partition window may be replaced with any optical component provided in the light-transmitting optical system, the first and the bright unit 1LU, and the light-transmitting optical system and the lighting unit ILU may be replaced. It is divided into a plurality of air-tight spaces. The reticle stage RST has a rectangular shape in plan view (viewed from above), and passes above the reticle stage 27 constituting the second stage 32 through an unillustrated plane. The aerostatic bearing is floating and supported. At the center of the reticle stage rst, as can be seen from the enlarged cross-sectional view near the reticle R in FIG. 1, an opening with a rectangular shape in plan view (viewed from above) is formed. 53, in the A plurality of higher-order vacuum suction sections are provided near the inner edge of the segment opening 53. A vacuum suction mechanism (vacuum clamp) (not shown) provided in each of the plurality of vacuum suction sections 53a is used to attach the reticle. Hold. On the pattern surface (lower side) of the reticle R, a rectangular film frame 57 and a thin m 56 attached below the film frame 57 are provided. The film 56 can prevent dust and the like from adhering to the pattern surface. μ At the two ends of the reticle stage RST in the X-axis direction, as shown in FIG. j, Y-axis linear motors (as driving devices) 24A and 24B are provided with individual movers 25a and 25b. Y-axis linear motors 24A and 24B The stators 26a, 26b are extended in the Y-axis direction with a predetermined length. These stators 26a, 26b are fixed to the floor F separately from the aforementioned support stand BD, and are respectively supported by motor support members M, 31b (Arranged in the long-side direction) support. In this case, a 21 200307979 movers 25a and 25b are driven in the Y-axis direction by the electromagnetic forces generated between the stators 26a and 26b, respectively. RST on the reticle carrier plate 2 7 The drive is performed along the Y-axis direction. The reticle stage RST is configured so that the thrust generated by the Y-axis linear motors 24A and 24B is slightly different, and the micro-drive (including rotation) can be performed in the XY plane. As mentioned above, the stators 26a and 26b of the Y-axis linear motors 24A and 24B are supported above the floor f through the motor support members 31a and 31b, and the vibrations generated by the stator are transmitted to the floor through the motor support members 31a and 31b. The structure of the side release is explained. However, the invention is not limited to this. For example, the stators 2 β a and 26 b and the reticle carrier plate 27 may be floated and supported by each supporting member through a hydrostatic bearing. If this is done, the stators 26a and 26b are driven in accordance with the reaction force when the reticle stage RST is driven, and the movement amount of the system including the reticle stage RST and the stator is saved, thereby preventing the above-mentioned reaction force from being caused. Stator vibration. In this case, since the center of gravity does not move, the so-called eccentric load can be prevented from occurring. When the cricket is connected to the reticle carrier plate 27, the reticle carrier plate 27 is configured to be relatively movable to the supporting member in the same manner as described above, and the reticle carrier plate can also be effectively suppressed. 27 vibration. This makes it possible to reduce the influence of the reaction force accompanying the driving of the reticle stage RST in the Y-axis direction on the projection optical system PL. The aforementioned reticle stage RST, as shown in FIG. 3 (A), fixes a reticle γ moving mirror 37Υ composed of a plane mirror extending in the X-axis direction at the -γ side end portion of the reticle stage RST. The mirror 37γ irradiates the length-measuring light beam from the reticle γ interferometer 30 set on the reticle stage 27 vertically. Also, 22 200307979 Two before: near the end of the x side of the reticle stage RST, a reticle X moving mirror 37 × composed of a plane mirror along the γ axis ^ ♦ will be fixed, right: the moving mirror 37 × will come from The length-measuring beam of a reticle x-interferometer (not shown) is irradiated vertically. The reticle interferometer 30 and the reticle X interferometer are used to load the calibration sheet. The position in the γ-axis direction and the position in the X-axis direction of RST can be detected frequently, for example, with a resolution of about inm. ^ Also, for example, the end surface of the reticle stage RST can be mirror-polished to form a j reflecting surface (equivalent to the reflecting surface of the aforementioned moving mirror). In addition, instead of the moving mirror 37 'for detecting the position of the line-sheet stage RST in the scanning direction (in the γ-axis direction of this embodiment), at least i right-angle reflection type mirrors (

例如4反光鏡）。在此，標線片Y干涉計30與標線片X =涉計中之-$，例如標線片γ干涉計3G，係具有2轴測 、軸之2軸干涉計，依據此標線片γ干涉計3〇之測量值， 除能測量標線片載台聊之γ位置外，亦能測量θ 旋轉。 ⑧以上述標線片X干涉計、標線片γ干涉計30所測量之 ^線片載台RST之位置資料（或速度資料），即標線片r之 位置f料（或速度資料）則供應至未圖示之控制裝置。控制 裝置，基本上係控制線性馬達24A、24B，使此等標線片干 涉計所輸出之位置資料（或速度資料）與控制目標值一致。 回至圖1，在照明單元ILU與標線片載台RST之間， 即在標線片載纟RST上方，設置第！遮蔽機構m，在標 線片載台RST與投影光學系統pL之間，即在標線片載台 23 200307979 RST下方’設置第2遮蔽機構1G2e對此等遮蔽機構之構成 等’將詳述於後。 前述投影光學系、统PL，係將由螢石、氟化鋰等之氟化 物結晶所成之透鏡或反射鏡組成的光學系統，以鏡筒19密 閉者。投影光學系、统PL，在此，作為一例，係使用兩側遠 心且投影倍率β例如1/4或1/5之折射系統。因此，如前述 ，若以來自照明單元ILU之曝光用光乩照明標線片r，其 照明領域部分之標線片Rjl之圖案，以投影光學系統孔縮 小投影於晶圓W上之照射領域之—部分，形成以前述曝光 用光EL所照明之圖案部分的縮小像（部分像）。 前述投影光學系統PL,係***於俯視（從上方看）呈圓 y之開口（以其光軸方向為z軸方向且形成於鏡筒盤3“之 中央）内，透過没置於其高度方向之中央稍下側之凸緣 固定於鏡筒盤34B。 又，投影光學系統PL，不限於折射系統，亦能使用反 射折射系統、反射系統中之任一系統。 刖述晶圓載台WST，係以未圖示之晶圓驅動系統（例如 ，係磁氣浮動型或以加壓氣體之靜壓浮動之氣體浮動型之 線性馬達等所構成之驅動裝置），沿前述晶圓載台底座挞 之上面且非接觸地在XY面内驅動自如。 晶圓載台WST，實際上，係具備：χγ台，在上述之χγ 面内驅動（合θζ旋轉）自如；基板載台等，搭載於此χγ台 上，用以保持晶圓W。在基板台上設置未圖示之晶圓保持 器，藉由該晶圓保持器例如以真空吸附來保持晶圓w。基 24 200307979 板台，藉由未圖示之驅動系統，沿Z轴方向及對XY面之傾 斜方向微小驅動。如此，晶圓載台WST，實際上，雖包含 複數之台、載台而構成，但是在以下，係將晶圓載台WST 當作：能以晶圓驅動系統朝X、Υ、Ζ、X軸周圍之旋轉之θχ 、Υ軸周圍之旋轉之θγ、及θζ方向的6自由度方向驅動的 單一載台來說明。 晶圓載台WST之位置資料，係透過設置於晶圓載台 WST上面之移動鏡16，藉由晶圓雷射光干涉計（以下，稱為 「晶圓干涉計」）20，例如以〇. 5〜lnm程度之分解能經常測 量。 又，實際上，移動鏡，係設置有移動鏡，具有正 交於X軸之反射面；及γ移動鏡，具有正交於Υ軸之反射 面；對應於此，雷射光干涉計，亦設置有：X方向位置測 里用之X雷射光干涉計，及γ方向位置測量用之γ雷射光 干涉計，但是在圖1係由移動鏡16、晶圓干涉計20來代 表此等構件而圖示。又，例如，亦可將晶圓載台WST之端 面鏡面加工來形成反射面（相當於移動鏡之反射面）。又 ’ X雷射光干涉計及γ雷射光干涉計，係具有複數支測長 軸之多軸干涉計，除能測量晶圓載台WST之X、γ位置外， 亦此測量旋轉（偏搖（係Ζ軸周圍之旋轉、θζ旋轉），縱搖（ 係X轴周圍之旋轉、θχ旋轉），橫搖（係γ轴周圍之旋轉、 θγ旋轉））。因此’在以下之說明，設定以雷射光干涉計2〇 ’能測量晶圓載台WST之X、γ、θζ、0y、θχ之5自由度方 向的位置。又’多軸干涉計，亦可透過傾斜45。且設置於 25 200307979 晶圓載台WST之反射面，將雷射光束照射於載置投影光學 系統PL之架台（未圖示）所設置的反射面，來檢測投影光學 系統PL之光軸方向（Z軸方向）相關之相對位置資料。 上述來自晶圓干涉計2〇之晶圓載台m的位置資料（ 或速度資料）係送至未圖示之控制裝置，在控制裝置，依 據晶圓載纟WST之位置資料（或速度資料）透過晶圓驅動系 統來驅動晶圓載台WST。 在晶圓載台WST與投影光學系統PL之間，設置第3遮 蔽機構103。對該第3遮蔽機構1〇3之構成等將於後述。⑩ 控制系統，主要係以未圖示之控制裝置所構成。控制 裝置，係包含由CPU(中央運算處理裝置），R0M(唯讀記憶 體）RAM(奴機存取記憶體）等組成之所謂微電腦（或工作站 )構成除執行上述各種控制動作外，為要使曝光動作 正確進行，例如控制標線片R與晶圓w之同步掃描，晶圓 w之步進等。 八體而a ’控制裝置，例如在掃描曝光時，同步於標 線片R透過標線片載台RST以速度VR=V沿+Y方向（或一Y方鲁 向）知描’透過晶圓載台WST使晶圓W對曝光領域以速度 U · ν(β ’係標線片R對晶圓w之投影倍率）沿-γ方向（ 或+Υ方向）掃描，分別依據標線片干涉計、晶圓干涉計20 之/則里值控制Υ軸線性馬達24Α、24Β，透過晶圓驅動系統 控制標線片載台RST、晶圓載台WST之位置及速度。 χ ’在步進時，控制裝置，係依據標線片干涉計及晶 圓干/步5十20之測量值，透過晶圓驅動系統控制晶圓載台 26 200307979 WST之位置。 然而’若要將真空紫外域之波長光當作曝光用光之情 形’則需要從其光路排除對如上述波長帶域之光具有強吸 收特性之氣體（如氧氣、水蒸氣、碳氫化合物系之氣體等 ，以下，適當稱為Γ吸收性氣體」）。因此，在本實施形 態’貫施將從光源至晶圓W之光路上之全部空間内部的吸 收性氣體極力排除之改善。對此，將詳述於後。 其次’就前述第1〜第3遮蔽機構（101、102、103)說 明。 别述第1遮蔽機構101，如圖i及圖3(A)所示，係包 含照明系統侧氣體清除側緣22而構成，係由設置於標線片 R上方，且χγ截面矩形框狀之一方之面（在圖1係下面）擴 及全面開口，而另一方之面（在圖1係上面）之中央部開口 ’全體而言厚度薄之直方體狀構件所構成的遮蔽構件。此 照明系統側氣體清除側緣22，係配置於特定物體（標線片R 及保持該標線片R之標線片載台RST中任一者）與照明單元 ILU j間，以至少在與前述特定物體之間形成既定之間隙 的狀態下’將標線片R之照明單A ILU側之至少包含對應 標線片R之圖案領域的領域之空間與外氣阻隔。 〜 照明系統侧氣體清除側緣22,係將其上端面22&固定 於照明單it ILU之照明系統殼2之標線片側端部（下端部） ，其下端面22b，係不接觸地接近於標線片載台rst之上 面（照明單元ILU側之面）而配置。即，在照明系統側氣體 清除側緣22之下端面22b與標線片載台RST之上面之間， 27 200307979 形成既定之間隙。在此情形，照明系統側氣體清除側緣22 與照明單元ILU與標線片載台RST之間，則形成空間IM， 作為大致氣密狀態之第1空間。 在此空間IΜ，為要確保南氣密性，前述間隙係越狹窄 越佳。但是，標線片載台RST，因伴隨掃插而有產生上下 振動之虞，故為避免即使產生上下振動時的標線片載台 RST與照明系統側氣體清除側緣22之接觸，需要設置某程 度之間隔。其間隔，雖依各機構之構成而異，但從氣密性 之觀點來看，上述間隙較佳者為最大3mm以下。 _ 又’亦可設置：配置於照明系統側氣體清除側緣22與 標線片載台RST之間，且位於照明系統側氣體清除側緣22 之下端部’例如將伸縮自如之波紋構件作伸縮驅動及傾斜 驅動的驅動裝置，藉由以該驅動裝置將波紋構件作伸縮及 傾斜驅動來調整間隙，使擴及照明系統側氣體清除側緣 全周大致均勻。 在圖4，表不標線片載台RST之俯視圖。如該圖4所 示’照明系統側氣體清除側緣22，係沿Y軸方向形成長矩 籲 框形狀。為何照明系統側氣體清除側緣22係如此將γ軸方 向設定為長形，則依據以下之理由。即，在本實施形態， 雖將標線片R(標線片載台RST)沿Y軸方向掃描（scan)，但 為要防止標線片R之污染，即使標線片載台RST沿γ幸由方 向掃描時，收容有標線片r之附段開口 53，則需要經常收 納於照明系統側氣體清除側緣22内部。另一方面，若是γ 軸方向長度（圖4所示之長度SY)不足，伴隨掃描，標線片 28 200307979 R與附段開口 53會有從照明系統側氣體清除侧緣22脫離 之可能性，若脫離時，則在照明系統側氣體清除侧緣22之 下端部22b與標線片R之間產生大間隙，使空間iM之氣密 性不能維持。然而，空間，因係光源至晶圓W之光路上 的空間’為要使後述之氣體清除有效地進行，需要確保某 程度以上之氣密性，故必須避免如上述情形。 上述長度SY，具體而言，係將標線片r之圖案領域之 Y轴方向長度’照明標線片R之照明領域之γ軸方向長度（ 所謂狹縫寬度）’與伴隨掃描之助行距離（在進行曝光之同 步移動時前後之加速域與減速域，標線片載台RST要移動 之助行距離’即所謂前掃描距離與後掃描距離之和）加起 來的長度合计來決定，具體而言，若標線片R係6吋見方 (150mm見方）之尺寸時，照明系統側氣體清除侧緣22内部 之Y軸方向長度sy，則需要25〇mm程度以上。 另方面，照明系統側氣體清除側緣22之X轴方向長 f SX，因標線片載台RST沿X轴方向不像沿γ轴方向驅動 知大，故在標線片R(或附段開口 53)之大小設置多多少少 、裕P可例如若標線片R係6吋見方（15Omm見方）之 寸時長度SX可設為ig〇mm程度以上。 ^又，為了確保空間1Μ之氣密性，即使標線片載台RST Y軸方向知描’需要將標線片載台RST以照明系統側氣 m除侧緣22繼續覆蓋之程度的大小。因此，標線片載台 之¥軸方向全長（圖4所示之長度RYi)，需要將照明夺 統側氣體清除側緣22内…軸方向長度⑺、照心 29 200307979 側氣體清除側緣22侧壁厚度之兩倍、和標線片载台RST之 Y方向掃描長度加起來的長度總計以上的長度，具體而+ ’例如’若標線片R係6叶見方（15〇mm見方）之尺寸時， 則需要使標線片載台RST之Y軸方向之全長Κγ設定為 600mm以上。 又’為要避免因才示線片載台RST之掃描所引起之標線 片載台RST與照明系統侧氣體清除側緣22之接觸，標線片 載台RST之表面形狀，至少相對於γ軸方向需要平坦。若 用數式表示此條件，標線片載台RST表面之z位置對γ方 向位置的函數Z=f(Y)，則相對於γ需要一定。 另方面，標線片載台RST之表面形狀，相對於χ軸 方向係不需要_定平坦，雖亦可具段差或f曲，但在該情 形，需要將照明系統侧氣體清除側緣22之下端面22b加工 成與標線片載台RST之表面形狀大致相同之形狀，若站在 加工性之觀點來看，變成非常複雜。因此，對標線片載台 RST之X軸方向之表面形狀，較佳者亦為平面。 又，在此情形，需要採用：使包含在空間IM内之構件 ，例如配置於標線片R或其他標線片周邊之構件全部，不 從標線片載台RST上面向上側露出之構造（參閱圖 前述第1遮蔽機構1〇1，除上述照明系統側氣體清除 側緣上2外，亦具有配管系統或差動排氣機構等，用來有效 地進行工間IM内之氣體置換，但;^對此等機構將詳述於後 〇 則述第2遮蔽機構1〇2，如圖j所示，具備投影系統 30 200307979 侧氣體/月除侧緣28，係透過設置於鏡筒盤34β上之複數個 /月除側緣保持機構29，保持於標線片載台脱下方的遮蔽 構件投衫系統侧氣體清除側緣28，該上端面心，係以 不接觸於‘線片載台RST下面(投影光學系統pL侧之面)的 方式接近配置，装τ A山二 oou ^ 々 再下^面28b，係以不接觸投影光學系統 PL之鏡筒19上端面的方式接近配置。即，在投影系統側 氣體/月除側緣28之上端面28a與標線片載台RST下面之間 u、、先側氣體清除侧緣28之下端面娜與投影光學系 統PL之間，分別形成間隙。 在此匱形，藉由投影系統側氣體清除側緣28、標線片 載台黯、標線片R、及投影光學***凡，形成大致氣密 狀態之空間MP。 在此，上述間隙，係與前述照明單元ILU及標線片載 台RST之間之間隙同樣，越狹窄越佳，但是，即使伴隨標 線片載台RST之掃描方向移動產生上下振動，因需要避免 標線片載台RST與投影系統側氣體清除側緣28之接觸，故 設置某程度之間隔。此情形之間隙，較佳者為與上述同樣 設定於3關以下。亦在此情形，亦可在投影系統側氣體清 除侧緣28上端側等，設置波紋構件及將該波紋構件伸縮驅 動且傾斜驅動之驅動裝置，擴及投影系統侧氣體清除侧緣 28上端面28a全周大致均勻地設定間隙。 才又衫糸統側氣體清除側緣2 8上端部之形狀、大4等 係設定為與上述照明系統側氣體清除側緣22之下端部相同 (即，内部係Y軸方向長度SY，χ軸方向長度sx之俯視二 31 200307979 形框狀）。採用此種形狀、大小之理由，係與照明系統側 氣體清除侧緣22之之情形相同，故省略其說明。 又，在此情形，為要避免伴隨標線片載台RST之驅動 ，標線片載台RST與標線片R接觸於投影系統側氣體清除 側緣28，需要採用：使薄膜56，或其他標線片周邊之構造 物全體不從標線片載台RST突出於下侧之構成（參閱圖 3(B))。 另一方面，投影系統側氣體清除側緣28下端面28b之 形狀係圓开> 框狀。此理由，係因投影光學系統PL之鏡筒 19具有圓筒形狀，且其上端面形狀為圓形框狀，故站在空 間MP之氣密性之觀點來看，較佳者為使投影系統側氣體清 除側緣28下端面28b，形成為與投影光學系統pL之鏡筒 19上端面相同之形狀。 叩口疋取弟丄永台34，故才j 氣體清除侧緣28與投影光學*** 型=封構件能氣密地接合(固定)。但是，若投影系· 側氣體清除側緣28藉由# @ 二、、、 其振動傳達至投影二:線二載：rst之媒動等振動1 情形’較佳者為如本實施 有使結像特性惡化之虞纪 此間隙，亦與上述同樣較:離:既定之間隔接近配置。 然而，在曝光裝置，因=設定在3_以下。 線片交換，故需要採用邊維：！將標線片R適宜與其他賴 ，邊能交換標線片_心=二空間仙之氣密伯 為要實現上述需要，亦At 、 犯採用如下之構成：例如，名 32 200307979 照明糸統側氣體清除側緣22側壁之一部分，設置能開閉之 標線片搬送窗（未圖示），透過此標線片搬送窗，藉由以未 圖示之標線片裝載機，將標線片R搬出空間IM外部，而將 新標線片搬入空間IM，來進行標線片；或是，標線片R全 體，即使向照明系統側氣體清除側緣22及投影系統侧氣體 清除側緣28之Y軸方向外侧突出，要將標線片载台RST之 γ軸方向掃描行程取大，使照明系統側氣體清除側緣22及 投影系統側氣體清除侧緣28能繼續覆蓋，以從照明系統側 乳體清除側緣22及投影系統侧氣體清除側緣28將標線片 r全體突出之狀態’使用設置於照明系統侧氣體清除側緣 22外側的標線片裝载機，來進行標線片交換。(Eg 4 reflectors). Here, the reticle Y interferometer 30 and the reticle X =-$ in the plan. For example, the reticle γ interferometer 3G is a 2-axis interferometer with two axes. According to this reticle, The measured value of the gamma interferometer 30 can not only measure the gamma position of the reticle stage, but also theta rotation. ⑧The position data (or speed data) of the reticle stage RST measured by the above-mentioned reticle X interferometer and reticle γ interferometer 30, that is, the position f (or speed data) of the reticle r Supply to a control device not shown. The control device basically controls the linear motors 24A and 24B so that the position data (or speed data) output by the reticle interference meter is consistent with the control target value. Returning to Fig. 1, between the lighting unit ILU and the reticle carrier RST, that is, above the reticle carrier RST, set the first! The shielding mechanism m is provided between the reticle stage RST and the projection optical system pL, that is, the second shielding mechanism 1G2e is provided below the reticle stage 23 200307979 RST. Rear. The aforementioned projection optical system and system PL is an optical system composed of a lens or a mirror formed by crystals of fluoride such as fluorite and lithium fluoride, and the lens barrel 19 is closed. The projection optical system and the system PL are used here as an example, a refraction system that is telecentric on both sides and has a projection magnification β, such as 1/4 or 1/5. Therefore, as described above, if the reticle r is illuminated with the exposure light from the illumination unit ILU, the pattern of the reticle Rjl in the illumination area portion is reduced by the projection optical system hole to project the irradiation area projected on the wafer W. —Partially, a reduced image (partial image) of a pattern portion illuminated with the exposure light EL is formed. The aforementioned projection optical system PL is inserted into an opening y (viewed from above) with a circular y (the optical axis direction is the z-axis direction and is formed in the "center of the lens barrel plate 3"), and the transmission is not placed in its height direction The flange at the lower center of the center is fixed to the lens barrel plate 34B. The projection optical system PL is not limited to the refractive system, and any one of the reflective refractive system and the reflective system can be used. A non-illustrated wafer driving system (for example, a magnetic floating type or a gas floating type linear motor driven by a static pressure of a pressurized gas) is used along the top of the wafer base. The wafer stage WST can be driven freely in the XY plane. In fact, the wafer stage WST includes: a χγ stage, which can be driven (combined with θζ rotation) in the above χγ plane; a substrate stage, etc. are mounted on the χγ stage To hold the wafer W. A wafer holder (not shown) is provided on the substrate table, and the wafer holder is used to hold the wafer w, for example, by vacuum suction. Base 24 200307979 Drive system, along the Z axis The XY plane is tilted slightly. In this way, the wafer stage WST is actually composed of a plurality of stages and stages. However, in the following, the wafer stage WST is used as the following: X, Y, Z, X around the axis of rotation θχ, rotation around the axis of θγ, and a single stage driven in 6 degrees of freedom in the θζ direction will be described. The position data of the wafer stage WST is set by The moving mirror 16 on the wafer stage WST can be frequently measured by a wafer laser interferometer (hereinafter, referred to as a “wafer interferometer”) 20, for example, with a resolution of about 0.5 to 1 nm. In fact, the moving mirror is provided with a moving mirror having a reflecting surface orthogonal to the X axis; and the γ moving mirror has a reflecting surface orthogonal to the Z axis; corresponding to this, a laser light interferometer is also provided There are: X laser interferometers used in X-direction position measurement and γ laser interferometers used in γ-direction position measurement, but in Figure 1, these components are represented by moving mirrors 16 and wafer interferometers 20. Show. Alternatively, for example, the end surface of the wafer stage WST may be mirror-finished to form a reflecting surface (equivalent to the reflecting surface of a moving mirror). Also, the X laser light interferometer and γ laser light interferometer are multi-axis interferometers with a plurality of measuring long axes. In addition to measuring the X and γ positions of the wafer stage WST, the rotation (deflection (system) Rotation around the Z axis, θζ rotation), Pitch (for rotation around the X axis, θχ rotation), Roll (for rotation around the γ axis, θγ rotation)). Therefore, in the following description, a position where the laser interferometer 20 can measure the 5 degrees of freedom directions of X, γ, θζ, 0y, and θχ of the wafer stage WST is set. The multi-axis interferometer can also transmit through 45 degrees. And it is set on the reflection surface of 25 200307979 wafer stage WST, and the laser beam is irradiated on the reflection surface provided on the stage (not shown) on which the projection optical system PL is placed to detect the optical axis direction of the projection optical system PL (Z Axis direction) relative position data. The above-mentioned position data (or speed data) of the wafer stage m from the wafer interferometer 20 is sent to a control device (not shown), and the control device passes through the crystal according to the position data (or speed data) of the wafer-carrying WST. A circular drive system to drive the wafer stage WST. A third shielding mechanism 103 is provided between the wafer stage WST and the projection optical system PL. The configuration and the like of the third shielding mechanism 103 will be described later. ⑩ The control system is mainly composed of control devices not shown. The control device consists of a so-called microcomputer (or workstation) composed of a CPU (Central Processing Unit), ROM (Read Only Memory) RAM (Slave Access Memory), etc. In addition to performing the various control actions described above, The exposure operation is performed correctly, for example, the synchronous scanning of the reticle R and the wafer w, and the step of the wafer w are controlled. Eight-body and a 'control device, for example, during scanning exposure, synchronizes with the reticle R through the reticle stage RST at a speed of VR = V along the + Y direction (or a Y-direction) to scan and describe through the wafer The stage WST scans the exposure area of the wafer W to the speed U · ν (β 'is the projection magnification of the reticle R to the wafer w) in the -γ direction (or + Υ direction), and is based on the reticle interferometer, The wafer interferometer 20 is controlled by the Υ axis linear motors 24A and 24B, and the position and speed of the reticle stage RST and the wafer stage WST are controlled by the wafer driving system. χ ’During the stepping, the control device controls the position of the wafer stage 26 200307979 WST through the wafer driving system based on the measured values of the reticle interferometer and the wafer stem / step 5-20. However, 'when the wavelength in the vacuum ultraviolet region is used as the light for exposure', it is necessary to exclude from its optical path gases (such as oxygen, water vapor, and hydrocarbons) that have strong absorption characteristics for light in the above-mentioned wavelength bands. The gas and the like are hereinafter referred to as "Γ absorbent gas" as appropriate "). Therefore, in this embodiment mode, the improvement of the absorptive gas inside the entire space from the light source to the wafer W on the light path is strongly eliminated. This will be described in detail later. Next, the first to third shielding mechanisms (101, 102, 103) will be described. In addition, as shown in FIG. I and FIG. 3 (A), the first shielding mechanism 101 includes a gas-removing gas-side edge 22 on the lighting system side, and is formed above the reticle R and has a rectangular frame shape of χγ cross section. One side (below in Fig. 1 series) has a full-opening, and the other side (above in Fig. 1) has a central opening that is a shielding member composed of a thin cuboid-shaped member as a whole. The gas-removing side edge 22 of the lighting system is arranged between a specific object (any of the reticle R and the reticle stage RST holding the reticle R) and the lighting unit ILU j so as to be at least in contact with In a state where a predetermined gap is formed between the aforementioned specific objects, the space of the area of the illumination sheet A ILU side of the reticle R including at least the pattern area corresponding to the reticle R is blocked from outside air. ~ The gas removal side edge 22 on the lighting system side is fixed at its upper end 22 & to the reticle side end (lower end) of the lighting system case 2 of the lighting unit it ILU, and its lower end 22b is close to the contactless The reticle stage rst (the surface on the ILU side of the lighting unit) is arranged. That is, a predetermined gap is formed between the end surface 22b of the lower side 22 of the lighting system gas and the upper surface of the reticle stage RST. In this case, a space IM is formed between the lighting system-side gas purge side edge 22 and the lighting unit ILU and the reticle stage RST as a first space in a substantially air-tight state. In this space IM, in order to ensure the airtightness of the south, the narrower the gap is, the better. However, the reticle stage RST may cause up-and-down vibration due to the swipe insertion. Therefore, in order to avoid contact between the reticle stage RST and the gas-removing side edge 22 of the lighting system even when the up-and-down vibration occurs, it is necessary to install the reticle stage RST. A certain interval. The interval varies depending on the structure of each mechanism, but from the viewpoint of air tightness, the above-mentioned gap is preferably at most 3 mm. _ It can also be set: placed between the gas removal side edge 22 on the lighting system side and the reticle stage RST, and located at the end below the gas removal side edge 22 on the lighting system side, for example, to expand and contract a corrugated member that can be stretched freely The driving device for driving and tilting drives adjusts the gap by using the driving device to expand and contract the corrugated member and tilting driving, so that the entire periphery of the gas-clearing-side edge extending to the lighting system is substantially uniform. In FIG. 4, the top view of the reticle stage RST is shown. As shown in FIG. 4, the gas-removing side edge 22 on the lighting system side has a long rectangular frame shape along the Y-axis direction. The reason why the γ-axis direction of the lighting system-side gas removal side edge 22 is set to be elongated is as follows. That is, in this embodiment, although the reticle R (the reticle stage RST) is scanned in the Y-axis direction, in order to prevent the reticle R from being contaminated, even the reticle stage RST is along the γ Fortunately, when scanning from the direction, the attached section openings 53 containing the reticle r need to be often stored inside the gas-clearing-side edge 22 on the lighting system side. On the other hand, if the length in the γ-axis direction (the length SY shown in FIG. 4) is insufficient, along with the scanning, the reticle 28 200307979 R and the opening 53 may be separated from the gas removal side edge 22 of the lighting system. When detached, a large gap is created between the lower end portion 22b of the lighting system-side gas removal side edge 22 and the reticle R, and the airtightness of the space iM cannot be maintained. However, the space is the space on the light path from the light source to the wafer W '. In order to perform the gas purging described later effectively, it is necessary to ensure a certain degree of airtightness, so it is necessary to avoid the situation described above. The above-mentioned length SY is specifically the length in the Y-axis direction of the pattern field of the reticle r 'the length in the γ-axis direction of the illumination field of the reticle R (the so-called slit width)' and the assist distance accompanying scanning (In the acceleration and deceleration areas before and after the synchronous movement of exposure, the assist distance to be moved by the reticle stage RST is the sum of the front scanning distance and the rear scanning distance.) In other words, if the reticle R is a 6-inch square (150 mm square), the Y-axis direction length sy inside the gas-clearing side edge 22 on the lighting system side needs to be about 25 mm or more. On the other hand, the length of the X-axis direction f SX of the gas-removal side edge 22 on the lighting system side is because the reticle stage RST is not driven along the X-axis direction as well as the γ-axis direction. Therefore, the reticle R (or attached section) The size of the opening 53) is set more or less. For example, if the reticle R is a 6-inch square (150 mm square) inch, the length SX can be set to about ig0 mm or more. ^ In addition, in order to ensure the airtightness of the space of 1M, even if the reticle stage RST is in Y-axis direction, the reticle stage RST needs to be covered by the side air m of the lighting system in addition to the side edge 22. Therefore, the full length of the reticle stage in the axis direction (length RYi shown in Fig. 4) needs to be inside the gas removal side edge 22 on the lighting control side ... the axial length ⑺, the center of focus 29 200307979 side gas removal side 22 The length of twice the thickness of the side wall and the Y-direction scanning length of the reticle stage RST add up to a total length of more than the length, specifically + 'for example' if the reticle R is 6 leaves square (15 mm square) For size, it is necessary to set the total length κ of the reticle stage RST in the Y-axis direction to 600 mm or more. In order to avoid the contact between the reticle stage RST and the gas removal side edge 22 caused by the scanning of the reticle stage RST, the surface shape of the reticle stage RST is at least relative to γ The axis direction needs to be flat. If this condition is expressed by a formula, the function of the z position on the reticle stage RST surface versus the γ direction position Z = f (Y) needs to be constant relative to γ. On the other hand, the surface shape of the reticle stage RST does not need to be flat relative to the x-axis direction. Although it can also have a step or f-curve, in this case, it is necessary to remove The lower end surface 22b is processed into a shape substantially the same as the surface shape of the reticle stage RST, and it is very complicated from the standpoint of processability. Therefore, the surface shape of the reticle stage RST in the X-axis direction is preferably a flat surface. In this case, it is necessary to adopt a structure in which all components included in the space IM, for example, all components arranged around the reticle R or other reticle are not exposed from the top of the reticle stage RST ( Referring to the aforementioned first shielding mechanism 101, in addition to the above-mentioned gas removal side 2 on the lighting system side, it also has a piping system or a differential exhaust mechanism, etc., for effectively replacing the gas in the workshop IM, but ^ These mechanisms will be described in detail below. The second shielding mechanism 102 will be described below. As shown in Figure j, it has a projection system 30 200307979 side gas / monthly removal side edge 28, which is provided through the lens barrel plate 34β. The upper edge removal mechanism 29 is retained on the reticle carrier, and the shielding member on the underside of the reticle carrier is removed from the shirting system. The upper side of the upper surface is centered so as not to contact the retinal carrier. The way below RST (the surface on the side of the projection optical system pL) is close to the configuration, and τ A 山 二 oou ^ 々 下 and the next surface 28b are installed close to the upper end of the lens barrel 19 of the projection optical system PL. That is, , The end surface 28a above the gas / month removal side edge 28 on the projection system side and A gap is formed between the lower surface of the linear stage RST and the lower end surface of the front gas removal side edge 28 and the projection optical system PL. In this shape, the projection system side gas removal side edge 28, The reticle stage is dark, the reticle R, and the projection optical system form a space MP in a substantially airtight state. Here, the gap is a gap between the lighting unit ILU and the reticle stage RST. Similarly, the narrower the better, but even if the reticle stage RST moves in the scanning direction to generate vertical vibration, it is necessary to avoid contact between the reticle stage RST and the gas removal side edge 28 on the projection system side, so set a certain level The interval in this case is preferably set to 3 or less in the same way as above. In this case, a corrugated member can also be provided on the projection system side gas removal side edge 28, and the corrugated member can be expanded and contracted. The driving device that is driven and tilted extends the upper end surface 28a of the gas removal side edge 28 on the projection system side, and the gap is set approximately uniformly over the entire circumference. The shape of the upper end portion of the gas removal side edge 28 on the system side, the size is 4 It is set to be the same as the lower end of the lighting system-side gas purge side edge 22 (ie, the internal system is in the Y-axis direction length SY, the x-axis direction length sx is the top frame 31 200307979). The reason for adopting this shape and size Is the same as that of the gas removal side edge 22 on the lighting system side, so its description is omitted. Also, in this case, in order to avoid driving with the reticle stage RST, the reticle stage RST and the reticle R is in contact with the gas removal side edge 28 on the projection system side, and it is necessary to adopt a structure in which the film 56 or other structures around the reticle do not protrude from the reticle stage RST to the lower side (see FIG. 3 (B) On the other hand, the shape of the lower end surface 28b of the gas-removal-side edge 28 on the projection system side is rounded > For this reason, since the lens barrel 19 of the projection optical system PL has a cylindrical shape and the upper end shape is a circular frame shape, from the standpoint of the airtightness of the space MP, it is preferable to make the projection system The lower end surface 28b of the side gas removal side edge 28 is formed in the same shape as the upper end surface of the lens barrel 19 of the projection optical system pL. It is taken from the mouth of the elder brother Yongtai 34, so the gas removal side edge 28 and the projection optical system type = sealing member can be airtightly joined (fixed). However, if the projection system side gas clearing side edge 28 is transmitted to the projection by # @ 二 、、, its vibration is transmitted to the projection two: the line two load: the media motion of the rst and other vibrations. The gap between the image of deterioration of image characteristics is also similar to the above: from: the predetermined interval is close to the configuration. However, in the exposure device, the setting is set to 3_ or less. Line piece exchange, so we need to use edge dimension :! The reticule R is suitable to be exchanged with other reeds. The edge can be exchanged with the reticule _Heart = Second Space Qibo. In order to achieve the above requirements, At and guilty adopt the following structure: For example, the name 32 200307979 lighting system side A part of the side wall of the gas removing side edge 22 is provided with a reticule conveying window (not shown) that can be opened and closed. Through the reticule conveying window, the reticule is loaded with a reticule loader (not shown). Move the new reticle into the space IM outside the space IM to perform the reticle; or the entire reticle R, even to the lighting system side gas removal side edge 22 and the projection system side gas removal side edge 28 It protrudes outward in the Y-axis direction. The scanning stroke of the γ-axis direction of the reticle stage RST should be made large so that the gas-clearing-side edge 22 on the lighting system side and the gas-clearing-side edge 28 on the projection system side can continue to cover from the lighting system side. The state where the breast removal side edge 22 and the projection system side gas removal side edge 28 project the reticle r as a whole, and the reticle is mounted using a reticle loader installed outside the gas system side gas removal side edge 22 on the lighting system exchange.

又，在此情形，若將標線片交換時之標線片載台RST ^多動方向方向之情形，亦在標線片交換時，Also, in this case, if the reticle stage RST ^ in the direction of multiple movements when the reticle is exchanged, also when the reticle is exchanged,

緣糸統側氣體清除侧緣22及投料統侧氣體清除側 緣28與標線片載台RST 線片R全體突出於此保持(即，即使標 側裹辦w ‘ 清除側緣2 2及投影系統 虱體π除侧緣28之外侧時，不 侧端部超越照明系統側氣體清;、及片載台RST之+Υ 清除側緣28UY側之心）側氣體 耗方向長度(具體而言二壁從^ 之長度）設定為充分長/圖4所不之標線片侧 22， 氣管 如圖2所示， 61、及第2供 於是，在照明系統侧氣體清除側緣 連接4種配管：第1供氣管60 14 氣管72、第2排氣管73。 33 200307979 在圖5(A)，將照明系統側氣體清除側緣22之下端面 22b與標線片載台RST接近配置之部分，以截面圖表示， 在圖5(B)，將照明系統側氣體清除侧緣22接近標線片載 台RST之面（下端面22b)之一部分放大表示。又，圖5(a) ，係相當於圖5(B)之A-A線截面。 前述第1供氣管60，如圖5(A)所示，係對貫通孔 251 (從照明系統側氣體清除側緣22之側壁外側，連通於内 側所形成的供應用開口），透過連接器75從照明系統側氣 體清除侧緣22外側連接。在與貫通孔251之與第1供氣管 60相反側設置供氣嘴76。 前述第1排氣管61，雖未圖示，但與上述第1供氣管 60同樣，對貫通孔（從照明系統侧氣體清除側緣22側壁外 側’連通於内側所形成之未圖示的排氣用開口），透過連 接器從照明系統側氣體清除側緣22外側連接。 如本實施形態，在使用真空紫外域之曝光波長的曝光 裝置，為要避免氧氣、水蒸氣等吸收性氣體所產生之曝光 用光的吸收，空間IM内之氣體則需要以低吸收性氣體置換 。因此，在本實施形態，使用第1供氣管6〇及第丨排氣管 61 ’以對真空紫外域之光具有吸收少之特性的特定氣體， 例如氮氣，及氦、氬、氖、氪等之稀有氣體，或此等氣體 之混合氣體（以下，適當稱為「低吸收性氣體」）填滿。 即，前述第1供氣管60之另一端，如圖2所示，係連 接於氣體供應裝置50之一端，第1排氣管61之另一端係 連接於未圖示之氣體回收裝置。在第1供氣管6〇、第1排 34 200307979 矾S 61，为別设置未圖示之供氣閥及排氣閥，藉由未圖示 之控制裝置適當控制供氣闕、排氣闕之開閉，及内設於氣 體供應裝置50之汞之啟動、停止，使低吸收性氣體填充於 ^間IM内’其内部之吸收性氣體漠度係降至數卿以下之 濃度。又，亦可將低吸收性氣體經常流動於空間傾内。 前述第2供氣管72之一端，如圖5(a)所示，對形成 於照明系統側氣體清除側緣22之側壁内部的截面l字狀的 供氣管路167,透過連接器65連接。連接該帛2供氣管72 之一端的供氣管路167之另—端側，係在連通於供氣用環 狀凹槽67(作為形成於照明㈣側氣體清除側緣22之下端 面22b的t、氣口）之狀態。在此情形，供氣用環狀凹槽 ’係設定為其寬度例如"職程度’其深度例如卜 度。 又’第2排氣管73之一端，對形成於照明系統側氣體 请除側緣22侧壁内部的截面L字狀的排氣管路168，透過 連接器66連接。連接此第2排氣管73之-端的排氣管路 168’係形成連通於作為排氣口之排氣用環狀凹槽⑼（相對 於照明系統侧氣體清除側緣22之下端面挪的空間Η， 係形成於前述供氣用環狀凹槽67外側）之狀態。在此情形 二排氣用環狀凹槽68 ’就與供氣用環狀凹槽67同樣，設 定為其寬度例如卜3咖程度，其深度例如卜3麗程度。2 ’環狀凹槽67、68間之間隔，能設定為5~20随程度。又 ’站在氣密性確保之觀點，較佳者為因應照明系統側氣體 清除側緣22之侧壁厚度，設定為盡量寬。 35 200307979 在此，第2供氣管72之另_# , 编’如圖2所示，係連接 於低吸收性氣體之供應裝置8〇，宽9扯尸^ ” 弟2排氣管73之另一端 係連接於真空泵79。並且，藉 稭由未圖示之控制裝置適當控 制内設於供應裝置80之泵及真空 工采7 9之啟動、停止，如 圖5(A)所示，將透過第2供氣管 e U及供乳官路所供 應之低吸收性氣體，從環狀凹样 供應至照明系統側氣體 >月除側緣22之下端面22b與標線片载台聊之間的間隙 IM’其間㈣内部之氣體’透過環狀凹槽68、排氣管路 168、及第2排氣管73向外部排氣。即，包含第2供氣管 72及第2排氣管73在内之氣體流路，主要係第2供氣管 〜供氣管路167—環_ 67-間隙I環狀凹槽6“ 排氣管路168—第2排氣管73，在門睹⑴y 在間隙D1中，形成從照明 糸統侧氣體清除側緣22内側（即空間IM側）向外側之氣體 流路。藉此，將對照明系統側氣體清除側緣22内側（空間 W之來自外狀氧氣或水蒸氣的流人，能以上述氣體流路 遮斷’對提高空間ΠΙ内之清除性能(即，氧氣漠度、水墓 乳濃度之減低性能）有極大效果。又，環狀凹槽67所供應 之低吸收性氣體之一部分會滲入空間IM内。又，環狀凹槽 68 ’則將照㈣、統側氣體清除側緣22外部之氣體之一部分 透過間隙D1排氣。 又’實際上，在環狀凹槽67、68形成複數個（例如3 =)供氣管路及排氣管路，在此等管路，分別連接第2供氣 b及第2排氣官，然而在圖2等為說明及圖示之方便，第 2供氣管及第2排氣管係分別連接各}條於照明系統側氣 36 200307979 體清除側緣2 2來表示。 又，環狀凹槽並不限於如上述形成2個凹槽，亦更能 將2個槽組合成複數個，來形成4層或6層…之槽。 又’透過第2供氣管72供應至間隙之氣體，並不限於 上述低吸收性氣體’例如在來自間隙之氣體排氣量比對間 隙之氣體供應量大’而供氣用環狀凹槽67所供應之氣體不 能滲入空間IM内之情形，亦可使用加壓空氣等低吸收性氣 體以外之氣體。 在前述投影系統側氣體清除側緣28，如圖2所示，分 別連接第1供氣管77，第1排氣管78，第2供氣管81、 82，及第2排氣管82、84。 在圖6(A) ’將投影系統側氣體清除側緣28之上端面 28a與標線片載台RST接近配置之部分，以截面圖表示， 在圖6(B)，將投影系統侧氣體清除侧緣28與投影光學系 統PL之鏡筒19接近配置之部分，以截面圖表示。 刖述第1供氣管77，如圖6(A)所示，係對貫通孔252 (對投影系統側氣體清除側緣28侧壁，從外側連通於内側 所形成的供應關口），透過連接器86從投影系統側氣體 清除侧緣28外側連接。又，在貫通孔挪之與第i供氣管 77相反側，設置供氣嘴打。 刖述第1排氣官78，雖未圖示，但與上述第1供氣管 77同樣，對貫通孔(對投影系統側氣體清除側緣28侧壁， 從外侧連通於_所形成），透過連接H從投㈣統侧氣 體清除側緣28外側連接。 37 200307979 如本實施形態，在使用真空紫外域之曝光波長之曝光 裝置’為要避免氧氣、水蒸氣等吸收性氣體所產生之曝光 用光的吸收，空間MP内之氣體則需要以低吸收性氣體置換 。因此’在本實施形態，使用第1供氣管77及第1排氣管 78將空間MP内以低吸收性氣體填滿。 即’前述第1供氣管77之另一端，如圖2所示，係連 接於氣體供應裝置50，第1排氣管78之另一端係連接於 未圖不之氣體回收裝置。在第1供氣管77、第1排氣管78 ，分別設置未圖示之供氣閥及排氣閥，藉由未圖示之控制 裝置適當控制供氣閥、排氣閥之開閉，及内設於氣體供應 裝置50之泵之啟動、停止，使低吸收性氣體填充於空間 MP内，其内部之吸收性氣體濃度係降至數ppm以下之濃度 。又，亦可將低吸收性氣體經常流動於空間Mp内。 如述第2供氣管81之一端，如圖6(A)所示，對形成 於投影系統側氣體清除侧緣28之側壁内部的截面L字狀之 供氣官路169，透過連接器88連接。連接該第2供氣管81 之一端的供氣管路169,係在連通於供氣用環狀凹槽17〇( 作為形成於投影系統側氣體清除側緣28之上端面28a的供 氣口）之狀態。在此情形，供氣用環狀凹槽17〇，係設定為 其寬度例如1〜3mm程度，其深度例如程度。 又’第2排氣管82之一端，對形成於投影系統側氣體 清除側緣28之側壁内部的截面L字狀之排氣管路171，透 過連接器89連接。連接此第2排氣管82之一端的排氣管 路in，係形成連通於作為排氣口之排氣用環狀凹槽172( 38 200307979 相對於技影系統側氣體清除側緣28之上端面如的空間 肝’係形成於供氣用環狀凹槽170外側）之狀態。在此情形 二排氣用環狀凹槽172’與供氣用環_ 17〇同樣，設 疋^其寬度例如卜3删程度，其深度例如卜3龍程度。又 衣狀凹槽170、172間之間隔，能設定為5~2〇廳程度。 又，站在氣密性確保之觀點來看，較佳者為按照投影系統 側氣體清除側緣28之側壁厚度，設定為盡量寬。 在此第2供氣官81之另一端，如圖2所示，係連接 :前述供應裝4 8。，第2排氣管82之另一端係連接於真 二泵79。並且，藉由未圖示之控制裝置適當控制内設於供 應裝置80之泵及真空泵79之啟動、停止，如圖6⑴所示 過帛2供氣管81及供氣管路169所供應之加遂氣體 攸衣狀凹槽17〇供應至投影系統側氣體清除側緣上端 面⑽與標線片載台RST下面之間的間隙：D2，其間隙⑽ 二：之氣體，透過環狀凹槽172、排氣管路m、及第之排 士管82向外部排氣…包含第2供氣管81及第2排氣 官82在内之氣體流路’主要係帛2供氣管81_^供氣管路 腸供氣用環狀凹# 17 “間p$ D2—排氣用環狀凹槽 m氣管路171—第2排氣管82，在間隙⑽中，形成 攸杈衫系統側氣體清除側緣28内側（即空間MP側）向外側 之氣體流路。又，環狀凹槽170所供應之低吸收性氣體之 一部分會渗入空間MP内。又’環狀凹槽172，則將投影系 統側氣體清除伽後28々k # β A ^ 于W緣M外部之亂體之一部分透過間隙D2排 氣0 39 200307979 鈿述弟2供氣管83之一端，如圖6(B)所示，對形成 於投影系統側氣體清除側緣28之側壁内部的截面L字狀之 供氣管路173，透過連接器90連接。連接此第2供氣管83 之一知的供氣管路173’係形成連通於供氣用環狀凹槽 1 7 4 (形成於投影系統侧氣體清除側緣2 8之下端面2 8 b作為 供氣口）之狀態。在此情形，供氣用環狀凹槽j 74，係設定 為其寬度例如1〜3mm程度，其深度例如1〜3mm程度。 又，第2排氣管84之一端，對形成於投影系統側氣體 清除側緣28之側壁内部的截面L字狀之排氣管路175，透 過連接器91連接。連接此第2排氣管84之一端的排氣管 路175，係形成連通於作為排氣口之排氣用環狀凹槽176( 相對於投影系統側氣體清除侧緣28之下端面28b的空間 肝，係形成於供氣用環狀凹槽174外側）之狀態。在此情形 ，排氣用環狀凹槽176與供氣用環狀凹槽174同樣，設定 為其寬度例如卜3mm程度，其深度例如程度。又， %狀凹槽174、176間之間隔，能設定為5〜2〇mm程度。又 ’從氣密性確保之觀點來看，與上述同樣，較佳者為按照 投影系統側氣體清除側緣28之側壁厚度，設定為盡量寬。 在此，第2供氣管83之另一端，如圖2所示，係連接 :前述供跑80,第2排氣管84之另一端係連接於真 並且藉由未圖示之控制裝置適當控制内設於供 應裝置80之泵及真空泵79之啟動、停止，如圖6⑻所示 ’=過第2供氣管83及供氣f路173所供應之加壓氣體 "袠狀凹槽174供應至投影系、统側氣體清除側、緣下端 200307979 内部之氣^線片載台脱下面之間的間隙其間隙D3 體’透過環狀凹槽1排氣管路Π5、及第2排 向外部排氣。即，包含第2供氣管83及第2排氣 氣體流路’主要係第2供氣管^供氣管路 17“排二用環狀凹槽17“間隙D“排氣用環狀凹槽 二排乳…75…排氣管84,在間隙D3中，形成 / ="系、先側氣體清除側緣28内側（即空間Mp側）向外側 孔體抓路。又’裱狀凹槽m所供應之低吸收性氣體之 邛刀曰參入空間MP内。又，環狀凹槽工Μ，則將投影系 統側氣體清除側緣28外部之氣體之—部分透過間隙⑽排 氣0 如上述，由於在投影系統側a體清除側緣28之上端面 28a及下端面28b，形成從空間Mp外側流動至内侧之氣體 飢路’對空間MP能遮斷投影系統側氣體清除側緣28外側 之氧氣或水蒸氣的流入，對提高空間Mp内之清除性能（即 ，氧氣/辰度、水蒸氣濃度之減低性能）有極大效果。 又，實際上，在環狀凹槽17〇、172、174、176以連通 狀態分別形成複數個（例如3個）之供氣管路及排氣管路， 在此等管路，分別連接第2供氣管及第2排氣管，然而在 圖2等為說明及圖示之方便，第2供氣管及第2排氣管係 分別連接2支於投影系統侧氣體清除側緣28來表示。 又，環狀凹槽並不限於如上述形成2個凹槽，亦更能 將2個槽組合成複數個來形成4層或6層…之槽。 又，雖將說明前後對調，但是若投影光學系統pL之鏡 200307979 筒19内之清除氣體之種類，係與空間MP内之清除氣體之 種類不相同之情形，則需要將透鏡L1之保持機構η 1 (位於 投影光學系統PL中之上端（靠近標線片R之側），如圖 6(B)所示）具有充分之氣密性，以免兩氣體混入。 前述第3遮蔽機構103，如圖1所示，包含晶圓氣體 清除側緣36而構成，該晶圓氣體清除側緣36，係配置於 投影光學系統PL與晶圓載台WST上之晶圓w之間，藉由_ 端固定於鏡筒盤34B下面之複數個懸掛支持構件92來懸掛 支樓的遮蔽構件。晶圓氣體清除側緣3 6之上端面3 6 a，传 以不接觸投影光學系統PL之鏡筒19下端面的方式接近配 置，又，晶圓氣體清除側緣36之下端面36b，亦係以不接 觸晶圓W的方式接近配置。晶圓氣體清除侧緣36，如由圖 1得知，因具有概略圓柱形之形狀，且將圓錐台狀之中空 部36c以從上側端面連通至下側端面之狀態形成於其中央 部’故在晶圓氣體清除側緣36與投影光學系統p]L與晶圓 W之間，形成大致氣密狀態之空間ρψ。 在圖7(A)，表示晶圓氣體清除側緣36附近之截面圖 ，在圖7(B)，表示將晶圓氣體清除側緣36從上侧（+z軸） 俯視之圖。又，圖7(A)中心線（投影光學系統pL之光軸 AX)左方之半面圖，係相當於圖7(B)之B_B線截面圖，圖 7(A)中心線右方之半面圖，係相當於圖7(B)之c—c線截面 圖。 在空間pw，為確保氣密性，投影光學系統PL之鏡筒 19與晶圓氣體清除側緣36之間之間隔（間隙）D4，及晶圓 42 200307979 氣體清除側緣36與晶圓W之間之間隔（間隙）D5，係越狹窄 越佳。但是，晶圓氣體清除側緣36與晶圓w之間之間隙 D5，因伴隨掃描方向及正交於此之非掃描方向的移動，在 晶圓載台WST有產生上下振動之虞，即使產生上下振動， 為要避開晶圓w與晶圓氣體清除側緣36接觸，需要保持某 種度之間隔。#間隔，雖依各機構之構成而異，但從氣密 性之觀點，間隙D5較佳者為最大3mm以下。 又，在晶圓氣體清除側緣36之下端部，設置波紋構件 及對該波紋構件作伸縮驅動及傾斜驅動之驅動裝置，來使 間隙D5擴及全周設定為能均勻地調整，亦為可能。 在晶圓氣體清除側緣36,如圖2所示，連接第丨供氣 e 11卜第1排氣管112，第2供氣管113及第2排氣管 114。在此實際上，如圖7(A)、圖7⑻所示，第2供氣管 113，係對晶圓氣體清除側緣36連接3條（第2供氣管 113A 113C) ’ f 2排氣管114，係對晶圓氣體清除側緣36 連接3條(第2排氣管114A〜U4C)，但是在圖2為圖示之 方便，僅圖示各1條。 36外側連接。在與貫通孔253之第 刖述第1供氣管1Π，如圖、圖7(幻所示，對貫 通孔253(作為從晶圓氣體清除側緣％外側，連通於内： 所形成的供氣用開口），透過連接器從晶圓氣體清除側緣 供氣管111之相反側 ’係央荖晶圓氣體清除側緣The gas system side gas removal side edge 22 and the material system side gas removal side edge 28 and the reticle stage RST line piece R all protrude from this (ie, even if the marking side is w ′, the cleaning side edge 2 2 and the projection When the system lice π is on the side other than the side edge 28, the non-side end portion exceeds the gas clearance on the side of the lighting system; and the chip stage RST + Υ clears the center of the side edge 28UY side) side gas consumption direction length (specifically two) The length of the wall from ^) is set to be sufficiently long / not shown on the graticule side 22 in Fig. 4, the air pipe is shown in Fig. 2, 61, and the second is provided, and four kinds of pipes are connected to the gas removal side edge of the lighting system side: The first air supply pipe 60 14, the air pipe 72, and the second exhaust pipe 73. 33 200307979 In Fig. 5 (A), the portion where the lower end surface 22b of the gas removal side edge 22 on the lighting system side is close to the reticle stage RST is shown in a sectional view. In Fig. 5 (B), the lighting system side A part of the surface (lower end surface 22b) of the gas removal side edge 22 close to the reticle stage RST is enlarged. 5 (a) corresponds to a cross section taken along the line A-A in FIG. 5 (B). As shown in FIG. 5 (A), the first air supply pipe 60 passes through the connector 75 through the through hole 251 (the outside of the side wall of the lighting system-side gas removal side edge 22 and the supply opening formed on the inside). It is connected from the outside of the gas removal side edge 22 of the lighting system side. An air supply nozzle 76 is provided on the side opposite to the first air supply pipe 60 from the through hole 251. Although the first exhaust pipe 61 is not shown in the figure, similar to the first air supply pipe 60, a through hole (not shown in the figure) formed through a through hole (connecting from the outside of the side wall of the gas-removal-side edge 22 of the lighting system to the inside). Gas opening), and connected from the outside of the gas-clearing-side edge 22 of the lighting system side through the connector. As in this embodiment, in an exposure device using an exposure wavelength in the vacuum ultraviolet region, in order to avoid absorption of exposure light generated by an absorbent gas such as oxygen or water vapor, the gas in the space IM needs to be replaced with a low-absorbent gas. . Therefore, in the present embodiment, the first gas supply pipe 60 and the first exhaust pipe 61 ′ are used as specific gases having low absorption characteristics for light in the vacuum ultraviolet region, such as nitrogen, and helium, argon, neon, krypton, etc. Noble gas, or a mixture of these gases (hereinafter, appropriately referred to as "low-absorbent gas") is filled. That is, as shown in Fig. 2, the other end of the first air supply pipe 60 is connected to one end of a gas supply device 50, and the other end of the first exhaust pipe 61 is connected to a gas recovery device (not shown). In the first air supply pipe 60 and the first row 34 200307979 alum S 61, an air supply valve and an exhaust valve (not shown) are provided separately, and the air supply and exhaust air are appropriately controlled by a control device (not shown). The opening and closing, and the start and stop of the mercury built in the gas supply device 50 make the low-absorptive gas filled in the IM's, and the absorptive gas inertness in the interior is reduced to a concentration below several tens. In addition, a low-absorptive gas may be constantly flowed into the space. As shown in Fig. 5 (a), one end of the second air supply pipe 72 is connected to a l-shaped air supply pipe 167 formed in the side wall of the side wall 22 of the gas removal side 22 of the lighting system through a connector 65. The other end of the gas supply pipe 167 connected to one end of the gas supply pipe 72 is connected to an annular groove 67 for gas supply (as t formed on the end surface 22b below the gas purging side edge 22 on the lighting gas side). , Gas port). In this case, the gas-supplying annular groove ′ is set to have a width such as " level of employment " and a depth thereof such as depth. One end of the second exhaust pipe 73 is connected to the exhaust pipe 168 formed in the lighting system side by removing the L-shaped exhaust pipe 168 inside the side wall of the side edge 22 through a connector 66. An exhaust pipe 168 'connected to the-end of the second exhaust pipe 73 is formed to communicate with an annular groove 连通 for exhaust, which is an exhaust port (removed from the end face of the lighting system-side gas removal side edge 22). The space Η is formed in the state outside the annular groove 67 for air supply). In this case, the annular groove 68 'for the second exhaust gas is set to have a width of, for example, approximately 3 degrees, and a depth of, for example, approximately 3 degrees, similarly to the annular groove for air supply 67. The interval between the 2 'annular grooves 67 and 68 can be set to 5 to 20 degrees. From the viewpoint of ensuring airtightness, it is preferable to set it as wide as possible in accordance with the thickness of the side wall of the gas removal side edge 22 on the lighting system side. 35 200307979 Here, as shown in Fig. 2, the second gas supply pipe 72 is connected to a low-absorptive gas supply device 80, wide 9 tow ^ "brother 2 exhaust pipe 73 One end is connected to the vacuum pump 79. Moreover, the start and stop of the pump and vacuum pump 79 built in the supply device 80 are appropriately controlled by a control device not shown by a control device not shown in the figure, as shown in FIG. 5 (A), which will be transmitted through The second gas supply pipe e U and the milk-supplying low-absorptive gas are supplied from the ring-shaped concave sample to the gas on the lighting system side> between the end surface 22b under the moon-removing side edge 22 and the graticule stage chat The gap IM 'inside the gas inside' is exhausted to the outside through the annular groove 68, the exhaust pipe 168, and the second exhaust pipe 73. That is, it includes the second air supply pipe 72 and the second exhaust pipe 73 The internal gas flow path is mainly the second gas supply pipe ~ gas supply pipe 167-ring _ 67-gap I ring groove 6 "exhaust pipe 168-second exhaust pipe 73, at the door see ⑴y in the gap In D1, a gas flow path is formed from the inside of the gas removal side edge 22 on the lighting system side (that is, the space IM side) to the outside. Thereby, the inside of the gas-clearing-side edge 22 of the lighting system (the flow of oxygen or water vapor from the space W can be blocked by the above-mentioned gas flow path, and the cleaning performance in the space II (i.e., oxygen The inertia and the performance of reducing the milk concentration of the water grave) have a great effect. In addition, a part of the low-absorbent gas supplied by the annular groove 67 will penetrate into the space IM. Moreover, the annular groove 68 'will take photos, Part of the gas outside the system-side gas removal side edge 22 is exhausted through the gap D1. Actually, a plurality of (for example, 3 =) gas supply pipes and gas discharge pipes are formed in the annular grooves 67 and 68, and here And other pipelines are connected to the second air supply b and the second exhaust officer, but for the convenience of illustration and illustration in Fig. 2 and so on, the second air supply pipe and the second exhaust pipe are respectively connected to the lighting system The side air 36 200307979 is shown as the side of the body clearing 2 2. Moreover, the annular groove is not limited to the formation of 2 grooves as described above, but it is also possible to combine the 2 grooves into a plurality to form 4 or 6 layers ... The gas supplied to the gap through the second gas supply pipe 72 is not limited to the above-mentioned low absorption. For example, when the gas exhaust amount from the gap is larger than the gas supply amount to the gap, and the gas supplied from the annular groove 67 for gas supply cannot penetrate into the space IM, low absorption such as pressurized air may be used. Gases other than gas. As shown in FIG. 2, the gas removal side edge 28 on the projection system side is connected to the first air supply pipe 77, the first exhaust pipe 78, the second air supply pipes 81, 82, and the second row, respectively. Gas tubes 82 and 84. The section where the upper end surface 28a of the gas-clearing-side edge 28 on the projection system side and the reticle stage RST are arranged close to each other in FIG. 6 (A) is shown in a sectional view, and in FIG. 6 (B), The section where the gas-clearing side edge 28 on the projection system side and the lens barrel 19 of the projection optical system PL are arranged close to each other is shown in a cross-sectional view. The first gas supply pipe 77 is shown in FIG. (The side wall of the gas removal side edge 28 on the projection system side communicates with the supply gate formed from the outside to the inside), and is connected from the outside of the gas removal side edge 28 on the projection system side through the connector 86. The through hole is moved to the first The air supply pipe 77 is provided on the opposite side of the air supply pipe 77. The first exhaust officer 78, Not shown, but similar to the first air supply pipe 77, the through hole (formed from the outside to the side wall of the gas removal side edge 28 on the projection system side is formed by communicating with _), and is connected from the gas removal side through the connection H The edge 28 is connected outside. 37 200307979 According to this embodiment, an exposure device using an exposure wavelength in the vacuum ultraviolet region is used to avoid absorption of exposure light generated by absorbent gases such as oxygen and water vapor, and the gas in the space MP is It needs to be replaced with a low-absorptive gas. Therefore, in the present embodiment, the space MP is filled with a low-absorptive gas using the first air supply pipe 77 and the first exhaust pipe 78. That is, 'the other of the aforementioned first air supply pipe 77 One end, as shown in FIG. 2, is connected to the gas supply device 50, and the other end of the first exhaust pipe 78 is connected to a gas recovery device (not shown). The first air supply pipe 77 and the first exhaust pipe 78 are respectively provided with an air supply valve and an exhaust valve (not shown), and the opening and closing of the air supply valve and the exhaust valve are appropriately controlled by a control device (not shown). The start and stop of the pump provided in the gas supply device 50 causes the low-absorbent gas to be filled in the space MP, and the concentration of the absorbent gas in the interior is reduced to a concentration of several ppm or less. Moreover, a low-absorptive gas may be constantly flowed in the space Mp. As shown in one end of the second air supply pipe 81, as shown in FIG. 6 (A), the L-shaped gas supply official path 169 formed inside the side wall of the gas removal side edge 28 of the projection system side is connected through a connector 88 . An air supply pipe 169 connected to one end of the second air supply pipe 81 is connected to an annular groove 17 for air supply (as an air supply port formed on an end surface 28a above the gas removal side edge 28 on the projection system side). status. In this case, the annular groove for air supply 17 is set to have a width of, for example, approximately 1 to 3 mm, and a depth of, for example, approximately. Furthermore, one end of the second exhaust pipe 82 is connected to the exhaust pipe 171 having a cross section in an L-shape formed inside the side wall of the gas removal side edge 28 on the projection system side through a connector 89. The exhaust pipe in connected to one end of the second exhaust pipe 82 is formed to communicate with the annular groove 172 (38 200307979 for exhaust gas) on the gas-removing side edge 28 of the film system side. The space liver 'on the end face is formed in a state outside the annular groove 170 for air supply). In this case, the ring groove 172 'for the second exhaust gas is the same as the ring for the gas supply _ 17〇, and its width is, for example, approximately 3 degrees, and its depth is, for example, approximately 3 degrees. The interval between the clothes-like grooves 170 and 172 can be set to about 5 to 20 halls. From the viewpoint of ensuring airtightness, it is preferable to set the width as wide as possible in accordance with the thickness of the side wall of the gas removal side edge 28 on the projection system side. At the other end of the second gas supply officer 81, as shown in FIG. The other end of the second exhaust pipe 82 is connected to the true second pump 79. In addition, the start and stop of the pump and the vacuum pump 79 built in the supply device 80 are appropriately controlled by a control device not shown in the figure. As shown in FIG. The U-shaped groove 17 is supplied to the gap between the upper end face ⑽ of the gas removal side edge of the projection system side and the underside of the reticle stage RST: D2, and the gap ⑽ 2: gas passes through the annular groove 172, the row The gas line m and the second exhaust pipe 82 are exhausted to the outside ... The gas flow path including the second air supply pipe 81 and the second exhaust officer 82 is mainly 帛 2 air supply pipe 81_ ^ Gas ring recess # 17 "between p $ D2-ring groove for exhaust m gas pipe 171-second exhaust pipe 82, in the gap ，, the inner side of the gas removal side edge 28 of the system is formed ( That is, the space MP side) toward the outside gas flow path. In addition, a part of the low-absorptive gas supplied by the annular groove 170 will penetrate into the space MP. Also, the annular groove 172 will remove the gas from the projection system side. After 28々k # β A ^ A part of the chaos outside W margin M is exhausted through the gap D2 0 39 200307979 At one end of 83, as shown in FIG. 6 (B), the L-shaped gas supply pipe 173 formed inside the side wall of the gas removal side edge 28 on the projection system side is connected through a connector 90. This second gas supply pipe is connected One of the well-known gas supply lines 173 'is formed in a state communicating with the annular groove 1 7 4 for gas supply (formed at the end surface 2 8 b below the gas removal side edge 2 8 of the projection system side as a gas supply port). In this case, the annular groove j 74 for air supply is set to have a width of, for example, about 1 to 3 mm, and a depth of, for example, about 1 to 3 mm. One end of the second exhaust pipe 84 is formed on the projection system side. An L-shaped exhaust pipe 175 inside the side wall of the gas removal side edge 28 is connected through a connector 91. An exhaust pipe 175 connected to one end of the second exhaust pipe 84 is formed to communicate with the exhaust gas. The state of the annular groove 176 for exhaust of the mouth (the space liver is formed outside the annular groove 174 for gas supply relative to the end surface 28b below the gas removal side edge 28 on the projection system side. In this case, the exhaust The gas annular groove 176 is set to have a width of, for example, about 3 mm, similarly to the gas supply annular groove 174. The depth is, for example, a degree. In addition, the interval between the% -shaped grooves 174 and 176 can be set to about 5 to 20 mm. From the viewpoint of ensuring air tightness, the same as the above, it is preferable to follow the projection. The thickness of the side wall of the gas-removing side edge 28 on the system side is set as wide as possible. Here, the other end of the second air supply pipe 83 is connected as shown in FIG. One end is connected to true and the start and stop of the pump and vacuum pump 79 built in the supply device 80 are appropriately controlled by a control device (not shown), as shown in Fig. 6 '= the second gas supply pipe 83 and the gas supply f The pressurized gas supplied by 173 is provided with the 袠 -shaped groove 174 to the projection system, the gas removal side of the system side, and the lower edge of the edge. The groove 1 exhaust line Π5 and the second row exhaust air to the outside. That is, the second air supply pipe 83 and the second exhaust gas flow path 'are mainly the second air supply pipe ^ the air supply pipe 17 "circular grooves for the second row 17" clearance D "two rows of annular grooves for the exhaust Milk ... 75 ... exhaust pipe 84, in the gap D3, the / = " system, the first side of the gas removal side 28 (the side of the space Mp), grasps the path to the outer hole body. The trowel of the supplied low-absorptive gas enters the space MP. In addition, the annular groove M will partially pass the gas outside the projection system-side gas-removing side edge 28 through the gap ⑽ exhaust as described above, As the upper end surface 28a and the lower end surface 28b of the body removal side edge 28 on the projection system side, a gas hunger path flowing from the outside of the space Mp to the inside is formed, and the space MP can block the oxygen outside the gas removal side edge 28 on the projection system side. Or the inflow of water vapor has a great effect on improving the clearance performance in the space Mp (ie, the performance of reducing the oxygen / temperature and the concentration of water vapor). In fact, in the annular grooves 17, 172, 174, 176 form a plurality of (for example, three) gas supply pipes and exhaust pipes in a connected state, in These pipes are respectively connected to the second air supply pipe and the second exhaust pipe, but for the convenience of explanation and illustration in FIG. 2 and the like, the second air supply pipe and the second exhaust pipe are respectively connected to the projection system side The gas removal side edge 28 is shown. Moreover, the annular groove is not limited to the formation of two grooves as described above, and it is also possible to combine two grooves into a plurality of grooves to form four or six layers of grooves. The back and forth adjustment will be explained, but if the type of the purge gas in the lens 200307979 of the projection optical system pL is different from the type of purge gas in the space MP, the holding mechanism η 1 of the lens L1 (located in The upper end of the projection optical system PL (the side near the reticle R), as shown in FIG. 6 (B), has sufficient airtightness to prevent two gases from being mixed in. The third shielding mechanism 103 is shown in FIG. It is composed of a wafer gas removal side edge 36. The wafer gas removal side edge 36 is arranged between the projection optical system PL and the wafer w on the wafer stage WST, and is fixed to the lens barrel disk by the _ end. A plurality of suspension support members 92 below 34B are used to suspend the shield members of the wing. Wafer The upper end face 3 6 a of the body removal side edge 3 6 is arranged close to the lower end face of the lens barrel 19 of the projection optical system PL, and the end face 36 b below the wafer gas removal side edge 36 is also The method of contacting the wafer W is close to the arrangement. As can be seen from FIG. 1, the wafer gas removal side edge 36 has a roughly cylindrical shape, and the frustum-shaped hollow portion 36 c is communicated from the upper end surface to the lower end surface. The state is formed in the central portion thereof, so that a space ρψ in a substantially airtight state is formed between the wafer gas purge side edge 36 and the projection optical system p] L and the wafer W. In Fig. 7 (A), the wafer is shown A cross-sectional view near the gas purge side edge 36 is a plan view of the wafer gas purge side edge 36 from the upper side (+ z axis) in FIG. 7 (B). The left half of the center line (optical axis AX of the projection optical system pL) in FIG. 7 (A) is a cross-sectional view corresponding to the line B_B in FIG. 7 (B), and the right half of the center line in FIG. 7 (A). The figure is a cross-sectional view corresponding to the line c-c in FIG. 7 (B). In the space pw, in order to ensure airtightness, the distance (gap) D4 between the lens barrel 19 of the projection optical system PL and the wafer gas removal side edge 36, and the wafer 42 200307979 between the gas removal side edge 36 and the wafer W The interval (gap) D5 is as narrow as possible. However, the gap D5 between the wafer gas removal side edge 36 and the wafer w is accompanied by movement in the scanning direction and the non-scanning direction orthogonal thereto, which may cause vertical vibration at the wafer stage WST, even if vertical In order to avoid the wafer w from contact with the wafer gas purging side edge 36, it is necessary to maintain a certain degree of vibration. #Gap varies depending on the structure of each mechanism, but from the viewpoint of airtightness, the gap D5 is preferably at most 3 mm. In addition, at the lower end of the wafer gas removal side edge 36, a corrugated member and a driving device for telescopic driving and tilting driving of the corrugated member are provided to expand the gap D5 so that the entire circumference can be adjusted uniformly, which is also possible. . As shown in FIG. 2, the wafer gas purging side edge 36 is connected to the first gas supply pipe 11, the first gas supply pipe 112, the second gas supply pipe 113, and the second gas supply pipe 114. Actually, as shown in FIG. 7 (A) and FIG. 7 (a), the second gas supply pipe 113 is connected to three wafer gas purging side edges 36 (the second gas supply pipe 113A 113C) 'f 2 exhaust pipe 114 Three lines (second exhaust pipes 114A to U4C) are connected to the wafer gas purging side edge 36, but it is convenient for illustration in FIG. 2 and only one line is shown. 36 outside connection. The first gas supply pipe 1Π with the through-hole 253 is shown in FIG. 7 (shown in FIG. 7), and the through-hole 253 (as the side of the wafer gas removal side outside% is connected to the inside: the formed gas supply With an opening), through the connector from the opposite side of the wafer gas purge side gas supply pipe 111 is the central gas wafer purge side edge

前述第1供氣管112，係夾荖 置於與第1供氣管 43 200307979 除側緣36外侧，連通於内側所形成的貫通孔253透過連接 器’從晶圓氣體清除側緣3 6外側連接。 如本實施形態，在使用真空紫外域之曝光波長的曝光 裝置，為要避免氧氣、水蒸氣等吸收性氣體所產生之曝光 用光的吸收，空間PW内之氣體亦需要以低吸收性氣體置換 。因此，在本實施形態，使用上述第丨供氣管U1及第j 排氣管112將空間PW内以低吸收性氣體填滿。 即，前述第1供氣管1U之另一端，如圖2所示，係 連接於氣體供應裝置50之一端，第i排氣管112之另一端 係連接於未圖示之氣體回收裝置。在第丨供氣管m、第j 排氣管112，分別設置未圖示之供氣閥及排氣閥，藉由未 圖示之控制裝置適宜控制供氣閥、排氣閥之開閉，及内設 於氣體供應裝置5G之栗之啟動、停止，使低吸收性氣體填 充於空間PW内’其内部之吸收性氣體濃度就降至數卿以 下之濃度。又，亦可將低吸收性氣體經常流動於空間”内 〇 則述第2供氣管i13a〜U3c，如總合圖7⑴及圖7⑻ 就得知，對在晶圓氣體清除側緣3以以約等間隔形成之大 致T字狀的第2供氣管路123A〜123(：，從晶圓氣體清除側 緣36外側透過連接器連接。第2供氣管路聰〜㈣，分 別成為連通於供氣⑽狀凹# 117(形成於晶圓氣體清除侧 緣36之上端面36a作為供氣口）與供氣用環狀凹槽119(形 成於晶圓氣體清除側、緣36之下端面編作為供氣口）之狀 態。 44 200307979The first gas supply pipe 112 is connected to the first gas supply pipe 43 200307979 except for the outside of the side edge 36 and a through hole 253 formed in communication with the inside is connected to the outside of the wafer gas removal side edge 36 through a connector '. As in this embodiment, in an exposure device using an exposure wavelength in the vacuum ultraviolet region, in order to avoid absorption of exposure light generated by an absorbent gas such as oxygen or water vapor, the gas in the space PW also needs to be replaced with a low-absorption gas. . Therefore, in this embodiment, the space PW is filled with the low-absorptive gas by using the first gas supply pipe U1 and the j-th exhaust pipe 112. That is, as shown in Fig. 2, the other end of the first gas supply pipe 1U is connected to one end of the gas supply device 50, and the other end of the i-th exhaust pipe 112 is connected to a gas recovery device (not shown). An air supply valve and an exhaust valve (not shown) are respectively provided in the mth supply pipe m and the jth exhaust pipe 112, and the opening and closing of the air supply valve and the exhaust valve are appropriately controlled by a control device (not shown). The start and stop of the chestnut set in the gas supply device 5G causes the low-absorptive gas to be filled in the space PW, and the concentration of the absorbent gas in the space is reduced to a concentration below several digits. In addition, the low-absorptive gas can be constantly flowed in the space. The second gas supply pipes i13a to U3c can also be described. As shown in FIG. T-shaped second gas supply lines 123A to 123 (formed at regular intervals are connected from the outside of the wafer gas purging side edge 36 through a connector. The second gas supply lines Satoshi-㈣ are connected to the gas supply ⑽, respectively.状 槽 # 117 (formed on the end surface 36a of the wafer gas removal side edge 36 as an air supply port) and annular groove 119 for the gas supply (formed on the end surface of the wafer gas removal side, the end surface below the edge 36 is used as a gas supply)口) 's status. 44 200307979

又，前述第2排氣管114A〜114C，對在晶圓氣體清除 側緣36内形成於前述第2供氣管路123A〜123C附近之大致 T字狀的第2排氣管路124A〜124C，從晶圓氣體清除側緣 36外側透過連接器連接。第2排氣管路124A〜124C，分別 對排氣用裱狀凹槽118(相對於晶圓氣體清除側緣36之上 端侧36a之空間pw，係形成於前述供氣用環狀凹槽工17外 側），及排氣用環狀凹槽120(相對於晶圓氣體清除側緣％ 之下端側36b之空間PW，係形成於前述供氣用環狀凹槽 119外側作為排氣口），成為連通之狀態。 在此情形，供氣用環狀凹槽117、119及排氣用環狀凹 槽118、I20，均設定為其寬度例如1〜3mm程度，其深度例 如1〜3mm程度。又，環狀凹槽117、118間之間隔，環狀凹 槽119、120間之間隔，均能設定為5〜2〇mm程度。又，站 在氣密性確保之觀點來看，較佳者為將按照晶圓氣體清除 側緣36側壁之厚度，設定為盡量寬。In addition, the second exhaust pipes 114A to 114C correspond to the substantially T-shaped second exhaust pipes 124A to 124C formed in the wafer gas purge side edge 36 near the second gas supply pipes 123A to 123C. It is connected through the connector from the outside of the wafer gas purge side edge 36. The second exhaust lines 124A to 124C are respectively formed in the exhaust grooves 118 (relative to the space pw of the upper end side 36a of the wafer gas removal side edge 36) in the annular grooves for the gas supply. 17 outer side), and an annular groove 120 for exhaust (the space PW of the lower end side 36b relative to the wafer gas removal side edge% is formed on the outer side of the aforementioned annular groove 119 for air supply as an exhaust port), Become connected. In this case, the annular grooves 117 and 119 for air supply and the annular grooves 118 and I20 for exhaust are set to have a width of, for example, about 1 to 3 mm, and a depth of, for example, about 1 to 3 mm. The interval between the annular grooves 117 and 118 and the interval between the annular grooves 119 and 120 can be set to approximately 5 to 20 mm. From the standpoint of ensuring the airtightness, it is preferable to set the thickness of the side wall of the side edge 36 in accordance with the wafer gas as wide as possible.

在此，第2供氣管i13A~113c(以下，適宜稱為「第2 供乳官113」），如圖2所示，連接晶圓氣體清除側緣％ 與供應裝置80,第2排氣管114A〜U4C(以下，適宜稱為「 弟排氣^ 114」），連接晶圓氣體清除側緣3 6與真空系 79。並且，藉由未圖示之控制裝置適當控制内設於供應裝 置8〇之泵及真空泵79之啟動、停止，與前述同樣，將透 過第2供氣管in及供氣管路123所供應之加壓氣體，從 各％狀凹槽U7、119分別供應至晶圓氣體清除側緣36之 上端面36a與投影光學系統pL下面之間的間隙D4，晶圓 45 200307979 氣體清除側緣36之下端面36b與晶圓W之間的間隙D5， 其間隙D4、D5内部之氣體，就依序透過環狀凹槽丨18、 120 ’排氣管路175，及第2排氣管114，向外部排氣。即 ，包含第2供氣管113及第2排氣管114在内之氣體流路 ’主要係第2供氣管1134供氣管路123A〜123C —供氣用 環狀凹槽117(或119)4間隙D4(或D5)—排氣用環狀凹槽 118(或120) —排氣管路i24A〜124C4第2排氣管U4，在各 間隙D4、D5，形成從晶圓氣體清除側緣36内側（即空間pw 侧）向外侧之氣體流路。 又，環狀凹槽117(或119)所供應之低吸收性氣體之一 部分，則透過間隙D4(或D5)滲入空間MP内。又，環狀凹 槽118(或120)，則將晶圓氣體清除側緣36外部之氣體之 一部分透過間隙D4(或D5)排氣。 如上述，由於在晶圓氣體清除側緣36之上端面36&及 下端面36b之雙方，形成從空間pw外側流動至内側之氣體 流路，對空間PW能遮斷晶圓氣體清除側緣36外側之氧氣 或水蒸氣的流入，對提高空間PW内之清除性能（即，氧氣 濃度、水蒸氣濃度之減低性能）有極大效果。 又，環狀凹槽並不限於如上述形成2個凹槽之情形， 亦能將2個槽進一步組合成複數個來形成4層或6層· ··之 槽。 又，若投影光學系統PL之鏡筒1 9内之清除氣體之種 類，係與空間PW内之清除氣體之種類不相同之情形，則需 要使透鏡L2之保持機構H2(位於投影光學系統pl中之下 46 200307979 端（靠近晶圓w之側），如圖 ’以免兩氣體混入。 (A)所示）具有充分之氣密性 =，因投影光學系、统PL係固定於第】架台34，故曰 =清除側緣36與投影光學系統PL，則亦能透過〇;: 裱寺费封構件氣密地接合（固定）。但是，若晶 側緣36藉由標線片载八/月除 至投影光學“。L I有動，將其振動 ㈢有使〜像特性惡化之虞的情形， 佳者為如本實施形態離開既定間隔，接近而配置。 又，晶圓氣體清除側緣％與投影光學系統Μ之門， 亦可省略供氣管用凹槽117。即，晶圓氣體清除側緣3:與 投影光學系統PL之間，亦可構成為將間隙以内之氣體， 或透過間隙D4之外部氣體及空間pw内之氣體，從排氣用 壤狀凹槽118吸引排氣。如上述，在晶圓氣體清除側緣％ 與投影光學系統PL之間，僅設置排氣用環狀凹槽118，則 對空間pw能遮斷晶圓氣體清除侧緣36外側之氧氣或水蒸 氣的流入。 雖將說明前後對調，但是如本實施形態，若要將真空 紫外域之光當作曝光用光el使用之情形，當然需要從照明 系統殼2内部或投影光學系統pl之鏡筒内部排除吸收性氣 體。因此，在本實施形態，照明系統殼2，係如圖2所示 以供氣管10連接於氣體供應裝置50，以排氣管11連接於 未圖示之氣體回收裝置。同樣，鏡筒19，係以供氣管30 連接於氣體供應裝置50,以排氣管31連接於未圖示之氣 體回收裝置。在供氣管10、30分別設置未圖示之供氣閥， 47 200307979 在排氣官11、31分別設置未圖示之排氣閥。藉由未圖示之 控制裝置適當控制各供氣閥、排氣閥之開閉，及内設於氣 體供應裝置50之泵之啟動、停止，使低吸收性氣體填充於 照明系統殼2内部或投影光學系統pL之鏡筒内部，其内部 之吸收性氣體濃度，就抑制至數ppm以下之濃度。又，亦 可將低吸收性氣體經常流動於此等空間内部。 又，上述之說明，係就將從氣體供應裝置50供應至各 空間内之低吸收性氣體，使用後向氣體回收裝置排氣之情 形說明，但是不限於此，亦可將各排氣管連接於氣體供應 _ 裝置50，將使用後之氣體送回氣體供應裝置5〇。在此情形 ’在氣體供應裝置50之内部，内設低吸收性氣體之儲氣箱 、泵、氣體精製裝置等（均省略圖示）。在此情形，内設於 氣體供應裝置50之氣體精製裝置，係用來將通過各空間而 純度降低之低吸收性氣體，再一次再造為既定之純度，例 如能使用··過濾器型，包含去除塵埃（粒子）之HEpA過濾器 或ULPA過濾、器等空氣過濾器，與去除氧氣、水蒸氣、碳& 化合物系之氣體等之吸收性氣體的化學過濾器，·或使用低 _ 溫栗’利用該低溫栗所液化之氣體中含有物質之氣化溫度 差異，來分離低吸收性氣體與雜質之類型亦可。又，氣^ 供應裝置50内部之儲氣箱，較佳者為透過具有流量控制機 能之閥，連接於外部之低吸收性氣體供應源，適宜補充低 吸收性氣體不足量。 ~ 然後，藉由未圖示之控制褒置適當控制供氣閥、排氣 閥之開閉，及内設於氣體供應裝置5〇之泵之啟動、停止， 48 200307979 使低吸收性氣體填充於各空間内，能抑制照明系統殼2内 之吸收性氣體濃度至數ppm以下之濃度。在此情形，即使 藉由包含氣體供應裝置50之循環途徑，將低吸收性氣體長 時間循環使用，能以氣體精製裝置維持各空間内之吸收性 氣體濃度至數ppm以下之濃度。 又’氣體供應裝置5 0 ’亦可將其内部對應前述各空間 分割為第1室〜第9室之9個空間。在此情形，亦可使各空 間内部之低吸收性氣體之種類為不相同。 又’在本實施形態，與上述照明系統殼2同樣，亦在 送光光學系統内部之光路填滿低吸收性氣體，則不在話下 〇 從以上之說明得知，由氣體供應裝置50、第1供氣管 、禾圖示之供氣閥，來構成供應低吸收性氣體（特定氣體 ^至照明系統側氣體清除側緣22内部之空間m的氣體供應 系、、先，由未圖示之氣體回收裝置、第1排氣管61、未圖示 5卜氣閥’來構成將空間IΜ内之氣體排氣至外部的氣體排 乳系統。又，由氣體供應裝置50、第i供氣管77、未圖示 么八-岣’來構成供應低吸收性氣體（特定氣體）至投影系 2乳體清除側緣28内部之空間MP的氣體供應系統，由 ，圖不之氣體回收裝置、第工排氣管78、未圖示之排氣閥 進j =成將空間MP内之氣體排氣至外部的氣體排氣系統。 供广步，由氣體供應裝置50、第1供氣管in、未圖示之 2閱，來構成供應低吸收性氣體（特定氣體）至晶圓側氣 _承側緣36内部之空間pw的氣體供應系統，由未圖示 49 200307979 之氣體回收裝置、第i排氣管112、未圖示之排氣閥，來 構成將空間pw内之氣體排氣至外部的氣體排氣系統。 又，藉由供應裝置80、真空泵79、第2供氣管路167 、第2排氣管路168、第2供氣管72、及第2排氣管73， 來構成供應加壓氣體（低吸收性氣體）至間隙D1内，並且將 間隙D1内之氣體排氣至外部的差動排氣機構。又，藉由供 應裝置80、真空泵79、第2供氣管路169、第2排氣管路 171、第2供氣管81、及第2排氣管82，來構成供應加壓 氣體至間隙D2内，並且將間隙D2内之氣體排氣至外部的 差動排氣機構。又，藉由供應裝置8〇、真空泵79、第2供 氣管路173、第2排氣管路175、第2供氣管83、及第2 排氣管84，來構成供應加壓氣體至間隙D3内，並且將間 隙D3内之氣體排氣至外部的差動排氣機構。又，藉由供應 裝置80、真空泵79、第2供氣管路123A〜123C、第2排氣 管路124A〜124C、第2供氣管113A〜113C、及第2排氣管 114A〜114C，來構成分別供應加壓氣體至間隙D4、D5内， 並且將此等間隙D4、D5之氣體排氣至外部的差動排氣機構 〇 如以上詳細說明，依本實施形態之曝光裝置1〇〇及該 曝光裝置所進行之氣體清除方法，構成第1遮蔽機構1〇1 之照明系統側氣體清除側緣22，因係以在與標線片RST之 間形成間隙D1之狀態下配置，故藉由設定其間隙D1為適 宜尺寸’能使配置於曝光用光EL之光路上之標線片r與照 明單元ILU之間的空間IΜ内，以某程度氣密狀態與外氣阻 50 200307979 並且’透過連接於照明系統側氣體清除側緣22之第1 仏氣& 60，將對曝光用光EL之吸收特性比吸收性氣體低 的低吸收性氣體供應至其空間内’透過連接於照明系統 側氣體清除側緣22之第1排氣管61排氣。藉此，能將標 線片R與照明| A ILU之間之空間ΙΜ $之氣體有效地置換 ，藉此能從空間ΙΜ内排除（清除）吸收性氣體。 又’藉由構成為透過形成於照明系統侧氣體清除側緣 22之標線片R側下端面22b之供氣用環狀凹槽67等，將 低吸收性氣體供應至間隙D1内，並且將間隙D1内之氣體 ，透過對空間IM形成於供氣用環狀凹槽67外側之排氣用 環狀凹槽68排氣至外部，能實質地提高標線片載台RST與 照明單元ILU之間之空間IM的氣密性。 又’構成第2遮蔽機構1 〇2之投影系統側氣體清除側 緣28，因以在與標線片載台RST之間形成間隙D2之狀態 配置，故藉由設定其間隙D2為適宜尺寸，能使配置於曝光 用光EL之光路上之標線片R，與投影光學系統pl之間的 空間MP内，以某程度氣密狀態與外氣阻隔。並且，透過連 接於投影系統側氣體清除側緣28之第1供氣管77供應低 吸收性氣體，透過連接於投影系統側氣體清除側緣28之第 1排氣管78排氣。藉此，不僅是空間IM，亦能從標線片R 與投影光學系統PL之間之空間MP内，排除吸收曝光用光 之吸收性氣體。Here, the second air supply pipes i13A to 113c (hereinafter referred to as “second milk supply officer 113” as appropriate) are connected to the wafer gas removal side% and the supply device 80, the second exhaust pipe, as shown in FIG. 2. 114A to U4C (hereinafter referred to as "brother exhaust ^ 114"), which connects the wafer gas purge side 36 and the vacuum system 79. In addition, the start and stop of the pump and vacuum pump 79 built in the supply device 80 are appropriately controlled by a control device (not shown), and the pressure supplied through the second air supply pipe in and the air supply line 123 is the same as described above. The gas is supplied from the U-shaped grooves U7 and 119 to the gap D4 between the upper end surface 36a of the wafer gas removal side edge 36 and the lower surface of the projection optical system pL, and the wafer 45 200307979 the lower end surface 36b of the gas removal side edge 36. The gap D5 between the wafer W and the gas inside the gaps D4 and D5 sequentially passes through the annular groove 18, 120 'exhaust pipe 175, and the second exhaust pipe 114, and exhausts to the outside. . That is, the gas flow path including the second gas supply pipe 113 and the second exhaust gas pipe 114 is mainly the second gas supply pipe 1134, the gas supply pipes 123A to 123C, the annular groove 117 (or 119) for the gas supply, and the gap. D4 (or D5) —annular groove 118 (or 120) for exhaust—exhaust pipe i24A to 124C4, the second exhaust pipe U4 is formed from the inner side of the wafer gas removal side edge 36 in each of the gaps D4 and D5. (Ie the space pw side) the gas flow path to the outside. A part of the low-absorbent gas supplied by the annular groove 117 (or 119) penetrates into the space MP through the gap D4 (or D5). Further, the annular groove 118 (or 120) exhausts a part of the gas outside the wafer gas purge side edge 36 through the gap D4 (or D5). As described above, since both the upper end surface 36 & and the lower end surface 36b of the wafer gas removal side edge 36 form a gas flow path flowing from the outside to the inside of the space pw, the space PW can block the wafer gas removal side edge 36. The inflow of oxygen or water vapor from the outside has a great effect on improving the clearance performance in the space PW (ie, the performance of reducing the concentration of oxygen and water vapor). In addition, the annular groove is not limited to the case where two grooves are formed as described above, and the two grooves can be further combined into a plurality of grooves to form four or six-layer grooves. In addition, if the type of purge gas in the lens barrel 19 of the projection optical system PL is different from the type of purge gas in the space PW, the holding mechanism H2 of the lens L2 (located in the projection optical system pl The lower 46 200307979 end (near the wafer w), as shown in the figure 'to prevent two gases from mixing in. (A)) has sufficient airtightness = because the projection optical system and the PL system are fixed to the first stage 34 Therefore, it is said that the clear side edge 36 and the projection optical system PL can also be airtightly joined (fixed) through the frame mounting member. However, if the crystal side edge 36 is divided into the projection optics by reticle loading eight / months. If the LI is moved, its vibration may cause deterioration of the image characteristics, and it is preferable to leave the set as in this embodiment. It can be arranged close to each other. Also, the gas-gas-removing-side edge% and the gate of the projection optical system M can also omit the groove 117 for the gas supply tube. That is, between the wafer-gas-removing edge 3: and the projection optical system PL It can also be configured to draw the gas within the gap, or the outside gas through the gap D4 and the gas in the space pw, to suck the exhaust gas from the exhaust groove 118. As described above, the wafer gas removal side edge% and Between the projection optical system PL, only the exhaust ring groove 118 is provided, and the space pw can block the inflow of oxygen or water vapor outside the wafer gas removal side edge 36. Although it will be explained before and after, but as in this example, In the embodiment, if the light in the vacuum ultraviolet region is used as the exposure light el, it is of course necessary to exclude the absorbing gas from the inside of the illumination system housing 2 or the inside of the lens barrel of the projection optical system pl. Therefore, in this embodiment, Lighting system housing 2, As shown in Fig. 2, the gas supply pipe 10 is connected to the gas supply device 50, and the exhaust pipe 11 is connected to a gas recovery device (not shown). Similarly, the lens barrel 19 is connected to the gas supply device 50 by the gas supply tube 30, so that The exhaust pipe 31 is connected to a gas recovery device (not shown). A gas supply valve (not shown) is provided in the gas supply pipes 10 and 30, and an exhaust valve (not shown) is provided in the exhaust officer 11 and 31 respectively. The opening and closing of each air supply valve and exhaust valve is appropriately controlled by a control device (not shown), and the start and stop of the pump built in the gas supply device 50 is made to fill the interior of the lighting system housing 2 or the projection optics with low-absorption gas. Inside the lens barrel of the system pL, the concentration of the absorbent gas inside it is suppressed to a concentration of several ppm or less. Also, low-absorbent gas can often be flowed into these spaces. Also, the above description is to A description will be given of a case where the low-absorbent gas supplied from the gas supply device 50 to each space is exhausted to the gas recovery device after use, but it is not limited to this, and each exhaust pipe may be connected to the gas supply_device 50, which will be used After gas Return to the gas supply device 50. In this case, a gas storage tank, a pump, a gas refining device, etc. of a low-absorptive gas are installed inside the gas supply device 50 (all illustrations are omitted). In this case, it is built in The gas refining device of the gas supply device 50 is used to reconstitute the low-absorption gas whose purity has passed through each space to a predetermined purity. For example, it can be used as a filter type and contains HEpA to remove dust (particles). Filters or air filters such as ULPA filters and chemical filters that remove absorbent gases such as oxygen, water vapor, carbon & compound-based gases, etc., or use low-temperature warm chestnuts to liquefy The difference in vaporization temperature of the substances contained in the gas can also be used to separate the types of low-absorption gas and impurities. In addition, the gas storage tank inside the gas supply device 50 is preferably connected to an external low-absorptive gas supply source through a valve having a flow control function, and is suitable for supplementing the low-absorptive gas shortage. ~ Then, the opening and closing of the air supply valve and the exhaust valve are appropriately controlled by a control device (not shown), and the start and stop of the pump built in the gas supply device 50 is used. 48 200307979 Fills each low-absorptive gas. In the space, the concentration of the absorbent gas in the lighting system case 2 can be suppressed to a concentration of several ppm or less. In this case, even if the low-absorptive gas is circulated for a long time through the circulation path including the gas supply device 50, the concentration of the absorptive gas in each space to a concentration of several ppm or less can be maintained by the gas refining device. Also, the 'gas supply device 50' can be divided into nine spaces of the first room to the ninth room corresponding to the aforementioned spaces. In this case, the types of low-absorptive gas in each space may be different. Also, in this embodiment, as in the case of the above-mentioned lighting system, the light path inside the light-transmitting optical system is filled with a low-absorbent gas, so it is not necessary. From the above description, the gas supply device 50, the first 1 The gas supply pipe and the gas supply valve shown in the figure constitute a gas supply system that supplies low-absorptive gas (specific gas ^ to the space m inside the gas removal side edge 22 on the lighting system side). The recovery device, the first exhaust pipe 61, and a 5 gas valve (not shown) constitute a gas milking system that exhausts the gas in the space IM to the outside. The gas supply device 50, the i-th air supply pipe 77, A gas supply system that supplies low-absorbent gas (specific gas) to the space MP inside the milk removal side edge 28 of the projection system 2 is not shown in the figure. The gas recovery device and the second row are shown in the figure. Gas pipe 78, exhaust valve inlet (not shown) = a gas exhaust system that exhausts the gas in the space MP to the outside. For a wide range of steps, the gas supply device 50, the first gas supply pipe in, not shown 2nd, to constitute the supply of low-absorption gas (specific gas The gas supply system to the space pw inside the wafer-side gas_bearing side edge 36 is composed of a gas recovery device (49 200307979 not shown), an i-th exhaust pipe 112, and an exhaust valve (not shown). The gas in pw is exhausted to the external gas exhaust system. In addition, the supply device 80, the vacuum pump 79, the second gas supply line 167, the second gas supply line 168, the second gas supply line 72, and the second row are provided. The air pipe 73 constitutes a differential exhaust mechanism that supplies pressurized gas (low-absorption gas) into the gap D1 and exhausts the gas in the gap D1 to the outside. The supply device 80, the vacuum pump 79, The second air supply line 169, the second exhaust line 171, the second air supply pipe 81, and the second exhaust pipe 82 are configured to supply pressurized gas into the gap D2, and exhaust the gas in the gap D2 to The external differential exhaust mechanism. The supply device 80, the vacuum pump 79, the second air supply pipe 173, the second air discharge pipe 175, the second air supply pipe 83, and the second exhaust pipe 84 are provided. A differential exhaust mechanism is provided that supplies pressurized gas into the gap D3 and exhausts the gas in the gap D3 to the outside. The supply device 80, the vacuum pump 79, the second air supply lines 123A to 123C, the second air supply lines 124A to 124C, the second air supply lines 113A to 113C, and the second air supply lines 114A to 114C to constitute separate supply pressures. The gas enters the gaps D4 and D5, and exhausts the gases of the gaps D4 and D5 to the external differential exhaust mechanism. As described in detail above, the exposure apparatus 100 and the exposure apparatus according to this embodiment are used. The gas removal method includes the lighting system-side gas removal side edge 22 constituting the first shielding mechanism 101, and is arranged in a state where a gap D1 is formed between the reticle and the reticle RST. Therefore, by setting the gap D1 as The “suitable size” enables the space between the reticle r arranged on the light path of the exposure light EL and the lighting unit ILU to be airtight to a certain degree and the external air resistance 50 200307979 and to be connected to the lighting system side The first radon gas & 60 of the gas removal side edge 22 supplies a low-absorption gas having a lower absorption characteristic than the absorption gas to the exposure light EL into the space 'through the gas removal side edge 22 connected to the lighting system side. The first exhaust pipe 61 exhausts. Thereby, the gas at the space IM of $ between the reticle R and the lighting | A ILU can be effectively replaced, so that the absorbent gas can be eliminated (removed) from the space IM. Furthermore, the low-absorptive gas is supplied into the gap D1 through a gas-supplying annular groove 67 formed through the reticle R-side lower end surface 22b formed on the gas-removal side edge 22 of the lighting system side, and the The gas in the gap D1 is exhausted to the outside through the exhaust annular groove 68 formed outside the annular groove 67 for air supply to the space IM, which can substantially increase the number of the reticle stage RST and the lighting unit ILU. The airtightness of the interspace IM. Also, the projection system-side gas removal side edge 28 constituting the second shielding mechanism 102 is arranged in a state where a gap D2 is formed between the reticle stage RST and the gap D2 is set to an appropriate size. The reticle R disposed on the light path of the exposure light EL can be blocked from the outside air in a space MP between the projection optical system pl to a certain degree. The low-absorptive gas is supplied through the first air supply pipe 77 connected to the projection system-side gas removal side edge 28, and exhausted through the first exhaust pipe 78 connected to the projection system-side gas removal side edge 28. Thereby, not only the space IM, but also the space MP between the reticle R and the projection optical system PL can exclude an absorptive gas that absorbs light for exposure.

因此，不需要使用大型且重之氣密性標線片載台室， 能進行從照明單元ILU至投影光學系統PL之曝光用光EL 51 200307979 之光路上之空間内的高精度之氣體置換，能從此等空間排 除吸收性氣體。在此㈣’因能使用照明系統側氣體清除 側緣22 ’投影系統側氣體清除側緣28，即，能覆蓋標線片 載台RST與照明單元ilu或投影光學系統pL間之空間之程 度的小型者，故能抑制裝置之大型化、重量化，再者，因 如上述將間隙Dl、D2形成於與標線片載台RST之間，故雖 將標線片R之圖案領域之一方之面側及另一方之面側之空 間與外氣阻隔，能從外部容易接近標線片載台RST。 又，在投影系統側氣體清除側緣28，亦與照明系統側 氣體清除側緣22同樣，因從形成於與標線片R對向之面（ 上端面28a)供氣用環狀凹槽17〇，將低吸收性氣體向標線 片R供應，並且將間隙D2内之氣體，透過對空間Mp形成 於上端面28a之供氣用環狀凹槽17〇外侧的排氣用環狀凹 槽Π2排氣至外部，故實質地提高空間仙之氣密性，能置 換為更高精度氣體。 又，在投影光學系統PL與投影系統側氣體清除側緣 28之間，因形成既定之間隙D3，故即使伴隨標線片載台 rst之驅動，引起投影系統側氣體清除侧緣28產生振動， 月^防止其振動傳達至投影光學系統PL。即使如上述形成間 ' D3在本貫施形怨，與間隙Dl、D2同樣，因在間隙D3 内形成從空間MP向外侧之氣體流路，故幾乎不會降低氣密 性。 θ … 又’在本貫施形悲’構成第3遮蔽機構jog之晶圓氣 體β除側緣36 ’以在與投影光學系統PL之間形成既定之 52 200307979 間隙D4,且在與晶圓w之間形成既定之間隙D5的狀態下 ，配置於投影光學“PL與晶圓w^，晶圓氣體清除側 緣36内部之空間，亦與上述各空間同樣，進行氣體置換。 又亦在0曰圓軋體清除側緣3 6，從形成於與投影光學 系統PL對向之面（上端面36a)之供氣用環狀凹槽ιΐ7將低 吸收性氣體向間隙D4内供應，並且將間隙M内之氣體， 透過形成於上端面36a之供氣用環狀凹槽117外側的排氣 用％狀凹# 118排氣至外部。進一步，因從形成於面對晶 圓w之面（下端面36b)之供氣用環狀凹槽ιΐ9，將低吸收性 氣體向間隙D5内供應，並且將間隙恥内之氣體，透過形 成於下端Φ 36b之供氣用環狀凹槽119外側的排氣用環狀 凹槽120排氣至外部，故實質地提高空間PW之氣密性，能 置換為更高精度氣體。 因此，不需要使用大型且重之氣密性標線片載台室， 就月b進饤從投影光學系統PL至晶圓w之曝光用光EL之光 路上之空間内的高精度氣體之置換，能從此空間排除吸收 性氣體°在此情形’因能使用晶圓氣體清除側、緣36,即， 月匕復孤日日圓W與技景》光學系統間之空間之程度的小型者 ，故能抑制裝置之大型化、重量化。 一以上，因能從照明單元ILU至晶圓之曝光用光EL之 光路上之二間排除低吸收性氣體，故能良好地維持曝光用 光EL之透過率而長時間進行高精度之曝光。 又，藉由使照明系統側氣體清除側緣22之與標線片載 口 Rst對向之面（下端面22b)，投影系統側氣體清除側緣 53 200307979 28之與標線片載台RST對向之面（上端面22a)均為平面， 標線片載台RST之上下面均為平面，即使是將間隙Dl、的 取充分狹窄之情形，移動標線片載台rST時，各清除側緣 22、28不會接觸標線片載台RST。因此，能邊維持空間a 、MP之氣密性，邊大幅移動標線片載台RST，邊在其後容 易進行標線片交換，或容易進行標線片載台RST之維護。 又，在上述實施形態，因將驅動標線片載台RST之Y 軸線性馬達24A、24B配置於清除空間之外側，故能使進行 氣體清除之空間縮小，減低氣體清除用氣體之使用量，並 且將投影光學系統PL或標線片R，能從伴隨標線片載二 RST之掃描所產生之塵埃或發熱遮蔽，能防止曝光裝置之 安定性或對標線片R之塵附著（污染）。 又，在上述實施形態，就不僅是照明單元ILU至投影 光學系統PL間之空間，而且是投影光學系統pL與晶 間之空間，亦使用晶圓氣體清除側緣36，來形成大致氣密 狀態之情形，加以說明，但是本發明並不限定於此。投影 光學系統PL與晶圓W之間之空間’通常因距離短，故亦= 藉由將氣體供應配管與氣體排氣配管之各端部位於此空間 ’透過氣體供應配管將低吸收性氣體送進前述空間内，並 且將含有其空間内之吸收性氣體之氣體，透過：體排氣配 管排氣至外部，能將吸收性氣體，從投影光學系統pL與晶 圓W間之光路上之空間排除某程度。因此，亦可將上述： 術，與適用於本發明之氣體清除方法組合。 又，在上述實施形態，雖對照明系統侧氣體清除側緣 54 2〇〇ju/y/y 22’係直接固設於照明單元則之 是亦可與其他之部分同描 ， 之匱形說明，但 同樣，以形成既定間隔 古斗、Μ 明系統側氣體清除側緣22。 工叹置照 即’如圖8所示，能在照明系統 照明單元ILU殼2之下端“除側緣22與 置。此情形，為提高“形成間㈣之方式設 37〇"2^ ^ 〇79 θ 370，、作排虱口之排氣用環狀凹 槽2,形成於照明系統側氣體清除側緣22之上端面22a ’分別對連通供氣用環狀 吐 衣狀凹槽370所形成之截面u字狀的 弟2供氣管路369與連通排氣用環狀凹槽372所形成之截 面^狀的第2排氣管路371，連接第2供氣管383與第2 排氣官384之一端，將此等第2供氣管挪，第2排氣管 384之另:端分別連接於供應裝置⑽及真空泵。藉由如此 構成#刚述同樣’因在間隙D6形成從空間im向外側之 氣體流路，故能抑制來自空間IM外之氣體之流入。 因此，以維持空間IM内之清除性能之狀態，伴隨標線 片載台RST之移動的振動’即使產生於照明系統侧氣體清 除側緣22，能避免對照明單元ILU傳達振動。 在此情形’藉由供應裝置8〇、真空泵79、第2供氣管 路369、第2排氣管路371、第2供氣管383、第2排氣管 384’來構成第3差動排氣機構。 又’在上述實施形態，雖就將本發明之氣體清除方法 採用於步進掃描方式之曝光裝置之情形說明，但是本發明 並不限於此’對步進重複（step and repeat)方式之曝光裝 55 200307979 置（所謂步進機stepper)亦能適用得合適。 在圖9，將適合適用於本發明之氣體清除方法的+、 機型曝光裝置之標線片載台附近狀態，將一部分來截面表 示。 如該圖9所示，標線片載台，係具備··栽台本體13〇 ’具有平板狀形狀；及複數個（例如4個）標線片保持部 132’固定於形成在該載台本體13〇中央之矩形開口 附近。 在各前述標線片保持部132,形成凹部134於其上面 ’透過連通該凹部134所形成之吸引用管路135，藉由連 接於標線片保持部132之吸氣管136吸附保持標線片R。 在標線片R與照明單元ILU之間，設置與上述實施形 態同樣之第1遮蔽機構101，。 此第1遮蔽機構101，，係包含照明系統側氣體清除側 緣22’而構成，在此照明系統侧氣體清除侧緣22,，與前述 第1遮蔽機構101同樣，連接於第1供氣管60’與第1排 氣管61’與複數個第2供氣管72’與複數個第2排氣管73, 。第1供氣管60’連接於氣體供應裝置80，第1排氣管61， 連接於未圖示之氣體回收裝置，藉此，因從第1供氣管 60,，將低吸收性氣體供應至照明系統側氣體清除侧緣22, 與照明單元ILU與標線片R所形成之大約氣密化的空間 IM，内，而從第1排氣管61，排出空間IM，内之氣體’故空 間IM，内就以低吸收性氣體置換。又，第2供氣管72’與第 2排氣管73,，分別連接於供應裝置80及真空栗79 ’因從 56 200307979 第2供氣管72,，對照明系統侧氣 R之門之門階m， 耀〆月除側緣22,與標線片 R之間之間隙1M供應加壓氣體， # ^ £| 1_ »JL 排氣吕 73 ’ 以 真二泵之及引力排出間隙M，之氣 故在間隙D1 ’形赤你 空間IM，向外側之氣體流路。 形成從Therefore, it is not necessary to use a large and heavy airtight reticle stage chamber, and it is possible to perform high-precision gas replacement in the space on the light path of the exposure light EL 51 200307979 from the illumination unit ILU to the projection optical system PL. Absorptive gases can be excluded from these spaces. Here, because the gas-removing side edge 22 of the illumination system can be used, the gas-removing side edge 28 of the projection system can be used, that is, the extent to which the space between the reticle stage RST and the illumination unit ilu or the projection optical system pL can be covered. Smaller, it is possible to suppress the enlargement and weight of the device. Furthermore, because the gaps D1 and D2 are formed between the reticle stage RST as described above, one of the pattern areas of the reticle R is The space on the surface side and the other surface side is blocked from the outside air, and the reticle stage RST can be easily accessed from the outside. The gas-removing-side edge 28 on the projection system side is the same as the gas-removing-side edge 22 on the lighting system side, because the annular groove 17 for gas supply is formed from the surface (upper end surface 28a) facing the reticle R. 〇, supply a low-absorptive gas to the reticle R, and pass the gas in the gap D2 through the annular groove for air supply 17 formed on the upper end surface 28a of the space Mp to the outer annular groove for exhaust Π2 is exhausted to the outside, so the airtightness of the space fairy is substantially improved, and it can be replaced with a higher-precision gas. In addition, since the predetermined gap D3 is formed between the projection optical system PL and the projection system-side gas removal side edge 28, even if the reticle stage rst is driven, the projection system side gas removal side edge 28 vibrates, Prevent the vibration from being transmitted to the projection optical system PL. Even when the formation interval D3 is formed as described above, similarly to the gaps D1 and D2, since the gas flow path from the space MP to the outside is formed in the gap D3, the airtightness is hardly reduced. θ… and “form the tragedy” in the present example to form the third shielding mechanism jog of the wafer gas β divided by the side edge 36 ′ to form a predetermined 52 200307979 gap D4 between the projection optical system PL and the wafer w In a state where a predetermined gap D5 is formed therebetween, the space inside the projection optics "PL and the wafer w ^, and the wafer gas clearing side edge 36 is also replaced with a gas in the same manner as the above-mentioned spaces. The rounded body clears the side edges 36, and supplies a low-absorptive gas into the gap D4 from the annular groove 供 7 for gas supply formed on the surface (upper end face 36a) facing the projection optical system PL, and the gap M is supplied. The internal gas is exhausted to the outside through the exhaust-shaped% recess # 118 formed on the outer side of the gas-supplying annular groove 117 on the upper end surface 36a. Further, since the gas formed on the surface facing the wafer w (the lower end surface) 36b) annular groove for air supply ΐ9, which supplies a low-absorbent gas into the gap D5, and passes the gas in the gap through the exhaust gas outside the annular groove 119 for air supply formed at the lower end Φ 36b The annular groove 120 is used to exhaust to the outside, so the airtightness of the space PW is substantially improved, Replace with a higher-precision gas. Therefore, it is not necessary to use a large and heavy air-tight reticle stage chamber, and enter the space on the optical path of the exposure light EL from the projection optical system PL to the wafer w for the month b. The high-precision gas replacement inside can eliminate the absorptive gas from this space. In this case, 'was able to use the wafer gas to clear the side and edge 36, that is, the space between the moon and the lonely Japanese yen W and the technical scene "optical system It is possible to suppress the increase in size and weight of the device because it is small in size. One or more, since the low-absorptive gas can be excluded from the light path between the lighting unit ILU and the exposure light EL of the wafer, it can be used well. The exposure of the exposure light EL is maintained for a long period of time with high accuracy. The projection system is configured such that the surface (lower end surface 22b) of the gas removal side edge 22 facing the reticle port Rst on the illumination system side faces the reticle port Rst. The side of the side gas removal 53 200307979 28 that faces the reticle stage RST (the upper end surface 22a) is a flat surface, and the reticle stage RST is a flat surface above and below, even if the gap D1, In a sufficiently narrow situation, the mobile reticle stage rST At this time, each of the clearing side edges 22 and 28 does not contact the reticle stage RST. Therefore, while maintaining the airtightness of the space a and MP, the reticle stage RST can be greatly moved while the reticle stage RST is easily moved afterwards. Reel replacement or maintenance of the reticle stage RST is easy. In the above embodiment, the Y-axis linear motors 24A and 24B that drive the reticle stage RST are arranged outside the clearing space, so that The space for gas removal is reduced, the amount of gas used for gas removal is reduced, and the projection optical system PL or reticle R can be shielded from dust or heat generated by scanning with reticle carrying two RSTs, which can prevent exposure Device stability or dust attachment (contamination) to reticle R. In the above embodiment, not only the space between the illumination unit ILU and the projection optical system PL, but also the space between the projection optical system pL and the crystal grains, and the wafer gas removal side edge 36 is used to form a substantially air-tight state. The situation will be described, but the present invention is not limited to this. The space between the projection optical system PL and the wafer W is usually short because of the short distance. Therefore, by placing the ends of the gas supply pipe and the gas exhaust pipe in this space, low-absorption gas is sent through the gas supply pipe. Into the aforementioned space, and passing the gas containing the absorptive gas in the space through the body exhaust pipe to the outside, the absorptive gas can be removed from the space on the optical path between the projection optical system pL and the wafer W Exclude to some degree. Therefore, the above-mentioned techniques can also be combined with the gas removal method applicable to the present invention. Moreover, in the above embodiment, although the gas removal side edge 54 200 / ju / y / y 22 'of the lighting system side is directly fixed to the lighting unit, it can be described in the same way as other parts. , But again, to form a predetermined interval Gudou, M Ming system side gas removal side edge 22. As shown in FIG. 8, the work can be placed at the lower end of the lighting system lighting unit ILU shell 2 except for the side edge 22 and the housing. In this case, in order to improve the "formation of the gap", it is set to 37 ° " 2 ^ ^ 〇79 θ 370, an annular groove 2 for exhausting the lice mouth, formed on the end face 22a of the gas-removing side edge 22 on the side of the lighting system. The formed U-shaped cross section of the second air supply pipe 369 and the second exhaust line 371 formed in cross section formed by communicating with the exhaust groove 372 are connected to the second air supply pipe 383 and the second exhaust officer. At one end of 384, the second supply pipe and the other end of the second exhaust pipe 384 are connected to the supply device ⑽ and the vacuum pump, respectively. With this configuration #Similarly described, since a gas flow path from the space im to the outside is formed in the gap D6, the inflow of gas from outside the space IM can be suppressed. Therefore, in order to maintain the cleaning performance in the space IM, the vibration accompanied by the movement of the reticle stage RST can prevent vibration from being transmitted to the lighting unit ILU even if the vibration is generated on the gas cleaning side edge 22 of the lighting system. In this case, the third differential exhaust is constituted by the supply device 80, the vacuum pump 79, the second air supply line 369, the second exhaust line 371, the second air supply pipe 383, and the second exhaust line 384 '. mechanism. Also, in the above-mentioned embodiment, although the case where the gas cleaning method of the present invention is applied to an exposure apparatus of a step-and-scan method is described, the present invention is not limited to this. 55 200307979 Set (the so-called stepper) can also be applied appropriately. In FIG. 9, a part of the vicinity of the reticle stage of the + and model exposure apparatus suitable for the gas removal method of the present invention is shown in section. As shown in FIG. 9, the reticle stage is provided with a planting base body 130 ′ having a flat plate shape, and a plurality of (for example, four) reticle holding portions 132 ′ are fixed to the stage. Near the rectangular opening in the center of the body 130. On each of the reticle holding portions 132, a recessed portion 134 is formed on top of the reticle holding portion 132, and a suction line 135 formed by communicating with the recessed portion 134 is formed. Tablet R. Between the reticle R and the lighting unit ILU, a first shielding mechanism 101 'similar to the above embodiment is provided. The first shielding mechanism 101 is configured to include a lighting system-side gas purge side edge 22 ′, and the lighting system-side gas purge side edge 22 is connected to the first gas supply pipe 60 in the same manner as the first shielding mechanism 101. 'And the first exhaust pipe 61' and the plurality of second air supply pipes 72 'and the plurality of second exhaust pipes 73 ,. The first air supply pipe 60 'is connected to the gas supply device 80, and the first exhaust pipe 61 is connected to a gas recovery device (not shown), whereby the low-absorbent gas is supplied from the first air supply pipe 60 to the lighting. The gas-clearing side edge 22 on the system side, the air-tight space IM formed by the lighting unit ILU and the reticle R, and the space IM from the first exhaust pipe 61 is exhausted. , The inside is replaced with a low absorption gas. In addition, the second air supply pipe 72 'and the second exhaust pipe 73' are connected to the supply device 80 and the vacuum pump 79 ', respectively. Since 56 200307979, the second air supply pipe 72' is the door step of the door to the gas system R. m, Yao Yue Moon removes the side edge 22, and the gap 1M between the reticle R is supplied with pressurized gas, # ^ £ | 1_ »JL exhaust 73. The gap M is discharged by the second pump and gravity. Therefore, in the gap D1 ', a red space IM is formed, and the gas flow path to the outside. Forming from

與投影光學系統PL 在標線片R之下面側，即標線片 之間’設置第2遮蔽機構1 〇2。 第2遮蔽機才冓！ 〇2，係包含投影系統側氣體清除側 緣28’而構成’在此投影系統側氣體清除側緣2卜與上述 實施形態同樣，連接於第丨供氣管77，，第丨排氣管Μ，， 複數個第2供氣管81，，複數個第2排氣管82，。此等第i 供氣管77’’第i排氣管78’分別連接於氣體供應裝置5〇, 未圖示之氣體回收裝置。藉此，因從第丨供氣管77，，將 低及收性氣體供應至投影系統側氣體清除側緣，與標線 片R與投影光學系統PL所形成之大約氣密化的空間Mp，内 ’而從第1排氣管78,排出空間MP，内之氣體，故空間Mp， 内之氣體，就以低吸收性氣體置換。 又，第2供氣管81，與第2排氣管82,，與上述實施形 態同樣，分別連接於供應裝置80及真空泵79。而且，從 第2供氣管81，對投影系統側氣體清除側緣28，與標線片r 之間之間隙D2,，及投影系統側氣體清除側緣28,與投影光 學系統PL之間之間隙D3,，供應低吸收性氣體，而從第2 排氣管82,排出間隙D2,及D3,之氣體。藉此，因在間隙D2, 、D3 ’形成從空間MP’向外側之氣體流路，故能更提高空間 MP’之氣密性。 57 200307979 在此’因步進機係在曝光動作中不掃描標線片（即，不 ，如掃描步進機之大動作），故構成第卜第2遮蔽機構之 乳體^除側緣’就能以比上述實施形態更接近於標線片只 之狀心配置。由各氣體清除側緣等所形成之大致氣密 化的空間IM，、MP，，則能比上述實施形態之空間以嗜形 成為更氣密化之清除空間。因此，比上述實施形態更抑制 曝光用光之吸收，能實現高精度之曝光。 又此f月形之標線片交換方法，例如，藉由將標線片 R沿圖9之紙面正交方向滑動，能容易實現。 又，在以上之全部說明，雖將空間（IM、MP、pw(或IM， 、、MP’））内之排氣，透過連接於各清除側緣之第丨排氣管來 進行但疋不限於此，能構成為從各空間排氣至外部。 又，在上述實施形態，投影光學系統pL，雖採用如圖 所不之直筒型鏡筒’但是替代之，例如，採用反射折射 型投影光學系統時，投影光學系統之形狀，雖變成具有彎 曲部分及突起部分等之形狀，但即使是此種情形，藉由將 氣體清除側緣接近配置於投影光學系統之標線片侧面或晶 圓側面’能適合地適用本發明。 又，在本實施形態，雖構成：在投影系統側氣體清除 侧緣28之端部，與投影光學系統pL之鏡筒18之上端面之 形成既定之間隙，然而亦可構成：將投影系統侧氣體 清除側緣28之端部，面對投影光學系統pL之鏡筒18之側 面使在與技影光學糸統PL之鏡筒18之侧面之間形成既 定之間隙。 58 200307979 再者，在本實施形態，雖就設置差動排氣機構之構成 說明，以避免在投影系統側氣體清除側緣28與投影光學系 統PL之間會傳達振動，但亦可將投影系統側氣體清除側緣 28與投影光學系統pL，以薄膜狀之連結構件連結。在此情 形，連結構件，較佳者為使用已減低吸收物質之薄膜狀構 件。此薄膜狀構件，係在乙烯乙烯醇樹脂（EV〇II樹脂）所構 成之薄膜材料外面，透過黏接劑覆蓋聚乙烯所構成之伸縮 生良好的保遵膜，進一步在其薄膜材料内面，將紹所構成 之安定化膜以蒸鍍等被覆來形成。EV0H樹脂，能使用固拉 列股份有限公司之「商品名野琶露」。 又’本發明之氣體清除方法，不僅是投影曝光裝置， 亦能對使用於搭載投影曝光裝置之投影光學系統之檢查的 才欢查光學裝置適用。此檢查光學裝置適用之實施形態，則 是將在下面說明之第2實施形態。 jL 2實施形錐 其次，依圖10說明本發明之第2實施形態。在此，對 與前述第1實施形態相同或同等之構成部分，使用相同符 號，並且使其說明簡略化或省略。 本第2實施形態，係關於在用來投影光學系統pL之檢 查的檢查光學裝置’固有且配置檢查光學系統之空間的氣 體清除方法。 在圖10，將構成檢查光學裝置之檢查部200與投影光 學系統PL及晶圓氣體清除側緣1 〇3 —起以截面圖表示。又 ’雖未圖示，但是因檢查光學裝置中之標線片侧（投影光 59 200307979 學系統PL上方）之氣體清除方法，係與前述步進機之情形 相同，广設置於投影光學系統PL下側之晶圓氣體清除側緣 103，係與上述第丨實施形態相同，故省略其說明。 構成檢查光學裝置之檢查部m，如圖1()所示，係且 備：光學系統支持框體0B’形成一方之端部(下端)封閉， 另一方之端部（上面）開口的圓筒狀（有底之圓筒狀）；檢查 光學系統160，係在該光學系統支持框體〇B内，包含沿z 轴方向依序㈣之透鏡161、162、163，而構成的光學系 統；攝影元件164，係配置於該檢查光學系統16〇下方的 光檢測器；X轴線性馬達MX，用來沿χ軸方向驅動光學系 統支持框體OB; Υ軸線性馬達ΜΥ，用來沿γ軸方向驅動光 學系統支持框體0Β ;及平板15〇，固定於光學系統支持框 體0Β之上端面。 前述檢查光學系統160中之透鏡161，係透過透鏡保 持器210，保持於光學系統支持框體〇Β内之上端部附近， 藉由該透鏡161與透鏡保持器210,比光學系統支持框體 〇Β内之透鏡161位在下側之空間，則成為氣密狀態。以下 ’稱此空間為「空間OC」。 使用檢查光學裝置之投影光學系統PL之像差測量時， 與上述第1實施形態同樣，由於使用真空紫外光，其真空 紫外光之光路之光學系統支持框體〇Β内部（空間〇C内部） ’需要以氮氣或稀有氣體等低吸收性氣體置換。因此，在 光學系統支持框體0Β，從外側至内側形成貫通孔255，作 為供氣用開口，在該貫通孔255之外側，透過連接器152 200307979 在貫通孔255之内側，設置供氣 151等從氣體供應裝置供應低吸 ，連接供氣管151。又， 嘴153。透過此等供氣管 收性氣體至空間0C内。 又，在光學系統支持框體⑽，與上述貫通孔255另外 ，形成貫通孔256,作為排氣用開口，在該貫通孔挪之 外側，透過連接器155連接排氣管156。空間〇C内之氣體 ，係透過此等排氣f 156等排出至光學系統支持框體0B外 4如此，空間0C内之氣體就置換為低吸收性氣體。 前述X軸線性馬達MX，係包含與光學系統支持框體〇B 連接之動子212’及以X軸方向為長邊方向之定子214而 構成。動+ 212 ’沿定子214朝X轴方向驅動，藉此光學 系統支持框體0B則沿X轴方向滑動驅動。又，性馬 達ΜΥ，係包含固定於X軸線性馬達Μχ之定子214下側的 動子216，及以γ軸方向為長邊方向之定子218而構成。 動子216，沿定子218朝γ軸方向驅動，藉此光學系統支 持框體0Β則與前述X軸線性馬達Μχ 一起沿γ軸方向滑動 驅動。 如此’在内部具備檢查光學系統1 6〇及攝影元件1 64 之光學系統支持框體0Β，則能在2維面内移動。 前述平板150，例如俯視（從上方看）呈矩形形狀，在 其中央部形成圓形開口 15〇a。又，對平板丨50將詳述於後 。在如此所構成之檢查部200，將以投影光學系統形成 之像等’透過構成檢查光學系統160之透鏡161〜163放大 才又影於由CCD等所組成之攝影元件164上，例如測量投影 200307979 光學系統PL之光學特性（像差等）。在此情形，如上述，因 藉由線性馬達MX、MY，能使光學系統支持框體0B作2維 移動，故能接受來自投影光學系統ρί之視野内之各測量點 的像光束全部，能測量視野内之各測量點的像差等。 平板150,如上述接受來自投影光學系統之視野内之 各測量點的像光束時，即使以線性馬達Μχ、Μγ，使光學系 統支持框體0Β在2維面内移動，具有晶圓氣體清除側緣 36之下端面不從平板突出之程度的尺寸。即，藉由設 置平板150,在投影光學系統PL與晶圓氣體清除侧緣％ 與檢查部200之間，與上述實施形態同樣，形成大致氣密 化之空間PO，此空間p〇，係即使檢查部2〇〇為檢查移動2 維方向，能經常維持氣密狀態。 如以上說明，依本第2實施形態，因從投影光學系統 PL至檢查部200之攝影元件164止之光路全部，以低吸收 性氣體置換，故能作高精度之投影光學系統孔之檢查。 又，使用CCD作為設置於光學系統支持框體〇β中之攝 影元件164時，一般係填裝於陶瓷封裝體，而在其前面設 置保護玻璃。然而，適合於真空紫外光用之保護玻璃，從 透過率之觀點來看並不佳，假如將螢石或添加氟之石英添 附於保護玻璃時，保護玻璃與CCD之受光面間之空間的氣 體置換，會有變成困難之問題。改善此問題者，係表示於 下之第3實施形態。 13實施形態 其次，依圖11U)、圖11(B)說明本發明之第3實施形 62 200307979 態。在此，對與前述第2實施形態相同或同等之構成部分 ’使用相同符號，並且使其說明簡略化或省略。 本第3實施形態，具有特徵··上述第2實施形態之光 學系統支持框體之構成；攝影元件164 (CCD，作為檢測器 )之配置方法；及在CCD上方設置光透過窗287。 在本實施形態，替代上述第2實施形態之光學***支 持框體0B，如圖11(A)所示，使用由第丨部分框體_與 第2部分框體0Bb所構成之光學系統支持框體〇β，。在此 等第1部分框體〇Ba，第2部分框體0Bb之邊界部分，形 成槽部231，在該槽部231將螢石或添加氟之石英等所構 成之光透過窗構件287,以部分框體〇Ba、_從上下兩侧 挾持。在此情形，光透過窗構件287，係以從第i部分框 體〇Ba與第2部分框體_稱微突出的各3點之突起部 290點接觸來保持。 如上述，將光透過窗構件287以上下各3點之點接觸 來保持（挾持）之理由，係若將光透過窗構件28了，以上下 空間完全氣密之方式強固地固定，則在光透過窗287多少 會產生應力變形，以光透過窗構# 287分隔之上下空間， 供應相同種類之低吸收性氣體時，較佳者為如上述以各3 點挟持。 在第2部分框冑〇Bb上方，與第2實施形態同樣 ，設置檢查光學系統160。 在第1。卩刀框體OBa之下端面，透過〇型環381，將 保持構件之陶兗封裝體270,以搭載⑽16…態氣密 63 200307979 地接合，透過截面概略s字狀之固定件及螺栓28〇，固定 於第1 。卩分框體〇Ba之下端面。在此情形，陶瓷封裝體 270如圖11 (B)所示，係由在上面中央形成凹部270b之 箱狀構件而構成，其上端面270a係設定為高平坦度。 又，通㊉之陶瓷封裝體係在其前面（上面）設置保護玻 璃’然而在本實施形態’不設置保護玻璃。 在陶瓷封裝體270之CCD164之下側部分，如圖11(A) 所示，形成配線用孔165,用來拉出來自CCM64之電荷轉 送控制電路等之電路的電氣配線27卜藉由如此形成配線 用孔165從該配線用孔165拉出電氣配線271，藉由在外 部與未圖示之連接配線連接，防止CCD164上面側之氣體透 過配線用孔165漏出外部，而能進行對CCD164之配線。 二然而，在陶究封裝體270之下面侧，如圖11(A)所示 ’設置轴耳帖元件272及散熱裝置274。 月J述ί白耳帖元彳272，係具有：_由透過連接於該玉白 耳帖兀件272之電流配線供應既定電流，來冷卻陶瓷封裝 體2 7 0的機能。 前述散熱裝置274,係設置於與前述轴耳帖元件272 之陶瓷封裝體270相反之面侧。此散熱裝置274，例如設 置液體配f 275於内部，對該液體配管m，藉由從未圖 不之液體供應裝置流通冷卻液體來進行珀耳帖元件2?2之 冷卻。又，散熱裝置274,亦可採用其他裝置（例如冷卻扇 等）。 如此叹置珀耳帖元件272及散熱裝置274之理由，係 64 200307979 (1)對珀耳帖元件272而言，當CCD164檢測微弱光時，為 改善S/N比（信號/雜訊比）之必要，較佳者為冷卻 ’（2)對散熱裝置274而言，與珀耳帖元件272之CCD相 反側（圖11(A)之下側之面），因在上述CCD164之冷卻時會 變成高溫，故需要冷卻珀耳帖元件272之下面側，使溫度 不上升至比周圍溫度（例如23。〇高。 在此，若使用珀耳帖元件272來冷卻CCD164，珀耳帖 兀件272所冷卻之CCD164附近的氣體，因對流等，會冷卻 配置於CCD164上方之透鏡或其附近的氣體，而可能造成光 學性能之不安定。因此，如上述，設置光透過窗構件287 〇 在此情形，光透過窗構件287與CCD164之間之空間， 亦需要以低吸收性氣體置換，以使真空紫外光不被吸收而 良好地透過。因此，在本實施形態，與前述者同樣，將供 氣管281之一端透過連接器283連接於貫通孔託7(從第1 部分框體OBa外側向内側形成，作為供氣用開口），在與貫 通孔257之供氣管281相反側設置供氣嘴285。透過此等 供氣管281等，從未圖示之氣體供應裝置，將低吸收性氣 體供應至氣密化之空間GC(由光透過窗構件287，第1部分 框體OBa及陶瓷封裝體27〇所形成）内。另一方面，與前述 貫通孔257另外，在貫通孔258(從第1部分框體0Ba向内 側形成，作為排氣用開口），透過連接器284連接排氣管 282。透過此等貫通孔258，排氣管282等，將空間GC内 之氣體排出至外部。藉此，將空間GC内之氣體置換為低吸 65 200307979 收性氣體。 又，若需要將CCD164冷卻為更低溫時，較佳者為設置 與光透過窗287同樣之光透過窗多數段，使已冷卻之ccd 164周邊之氣體不傳至位於上方之光學系統。 如以上詳細說明，依本第3實施形態，將陶瓷封裝體 270(收容CCD164於開口一方之面之内部，其受光面朝向開 口）之開口周圍之端面270a，對第i部分框體〇Ba透過密 封構件（0型環）381結合，與外氣阻隔包含CCI)164之受光 面在内的空間GC。因此，以第丄部分框體〇Ba與陶瓷封裝 體270所开^成的空間（jc，則成為氣密性良好之空間。並且 ，將射入於受光元件的光之吸收特性小的特定氣體（低吸 收性氣體），透過連接於第i部分框體〇Ba之供氣管28ι供 應至空間GC内，將空間GC内之氣體，透過連接於第i部 刀框體OBa之排氣管排出至外部。藉此，因空間Gc能以低 吸收性氣體#纟良好地置換，故纟光檢測器之受光面受光 為止之期間内，光幾乎不會被吸收。因此，能精度良好地 、/亍光檢測器之光量檢測，依此光量檢測之結果，例如要 進行杈衫光學系統PL之光學特性之測量時，能提高其 精度。 又，在上述第3實施形態，雖將用來作空間内之氣 體置換的供氣t 281及排氣管挪，連接於第i部分 OBa，曰县x服μ , 一不限於此，亦可在陶瓷封裝體270形成開口，對 該開口將供氣管281、排氣管282連接。 又，在上述第3實施形態，為了需要設置光透過窗構 66 200307979 件287，雖使用由第1部分框體〇Ba、第2部分樞體〇Bb之 2個部分框體所構成之光學系統支持框體〇B，，作為光學系 統支持框體，但是不限於此，在不設置光透過窗構件7 亦可之情形，陶瓷封裝體270，亦可直接固設於第2部分 框體OBb。 又’上述實施形態之曝光裝置之光源，不限於&雷射 光源，ArF準分子雷射光源，KrF準分子雷射光源等，例如 ’亦可使用：自DFB半導體雷射或光纖雷射所振盪之紅外 或或將可視域之單一波長雷射光，例如以摻雜铒（或斜 與鏡雙方）之光纖放大器放大，使用非線形光學結晶，波 長轉換為紫外光的高次諧波。又，投影光學系統之倍率不 僅是縮小系統，亦可等倍及放大系統中之任一種。 又，藉由將由複數個透鏡所構成之照明單元、投影光 學系統裝設於曝光裝置本體，作光學調整，同時將由多數 個機械構件所構成之晶圓載台（掃描型時標線片載台亦一 起）裝設於曝光裝置本體，而連接配線或配管，將構成標 線片室，晶圓室之各隔壁裝設，連接氣體配管系統，作對 此控制系統之各部分之連接，進一步作總合調整（電氣調 整、動作確認等），則能製造上述實施形態之曝光裝置1〇〇 等的本發明相關之曝光裝置。又，曝光裝置之製造，較佳 者為在管理溫度及潔淨度等之潔淨室進行。 立件製造方法 其次，就在微影製程使用上述曝光裝置的元件製造方 法之實施形態說明。 67 200307979 在圖，表示元件（1C或LSI等半導體晶片、液晶面 板、CCD、薄膜磁頭、微機器等）之製造例的流程圖。如圖 1 不’首先，在步驟301 (設計步驟），作元件之機能·性 月b a计（例如，半導體元件之電路設計等），進行用以實現 其機能之圖案設計。接著，在步驟302 (光罩製作步驟）， 製作形成所設計之電路圖案的光罩。另一方面，在步驟 303 (晶圓製造步驟），使用矽等材料製造晶圓。 其次，在步驟304 (晶圓處理步驟），使用在步驟3〇1〜A second shielding mechanism 1 02 is provided below the reticle R, ie, between the reticle and the projection optical system PL. Only the second masking machine! 〇2, which is formed by including the gas-removing side edge 28 ′ on the projection system side. Here, the gas-removing side edge 2 on the projection system side is connected to the first gas supply pipe 77 and the second exhaust pipe M in the same manner as in the above embodiment. A plurality of second air supply pipes 81 ′ and a plurality of second exhaust pipes 82 ′. These i-th gas supply pipes 77 '' and i-th exhaust pipes 78 'are respectively connected to a gas supply device 50, a gas recovery device (not shown). Therefore, since the low and condensable gas is supplied from the first gas supply pipe 77 to the gas removal side edge of the projection system side, the space Mp, which is approximately airtight, formed by the reticle R and the projection optical system PL, 'The gas in the space MP, is exhausted from the first exhaust pipe 78, so the gas in the space Mp, is replaced with a low-absorptive gas. The second air supply pipe 81 and the second exhaust pipe 82 are connected to the supply device 80 and the vacuum pump 79 in the same manner as in the above embodiment. Further, from the second gas supply pipe 81, a gap D2 between the projection system side gas removal side edge 28 and the reticle r, and a gap between the projection system side gas removal side edge 28 and the projection optical system PL. D3, supplies a low-absorptive gas, and exhausts the gas from the gaps D2, and D3, from the second exhaust pipe 82. Accordingly, since the gas flow path from the space MP 'to the outside is formed in the gaps D2, and D3', the airtightness of the space MP 'can be further improved. 57 200307979 Here 'because the stepper does not scan the reticle during the exposure action (ie, no, such as the large action of scanning a stepper), so the breast of the second masking mechanism ^ except the side edge' It can be arranged closer to the center of the reticle than in the above embodiment. The substantially air-tight spaces IM, and MP formed by the respective gas-clearing side edges and the like can be formed into a more air-tightly-cleared space than the space of the above-mentioned embodiment in a shape-enhancing manner. Therefore, it is possible to suppress the absorption of exposure light more than in the above-mentioned embodiment, and to realize high-precision exposure. This f-moon-shaped reticle exchange method can be easily implemented, for example, by sliding the reticle R in a direction orthogonal to the paper surface of FIG. 9. In all the above descriptions, although the exhaust in the space (IM, MP, pw (or IM,, MP ')) is performed through the exhaust pipe connected to each of the clearing edges, it does not matter. It is limited to this, and it can be comprised so that it may exhaust from each space to the outside. In the above embodiment, the projection optical system pL is a straight-type lens barrel as shown in the figure, but instead, for example, when a reflection-refraction type projection optical system is used, the shape of the projection optical system is curved. And the shape of the protrusions, etc., even in this case, the present invention can be suitably applied by arranging the gas removal side edge close to the reticle side or the wafer side of the projection optical system. In this embodiment, a predetermined gap is formed between the end of the gas removal side edge 28 on the projection system side and the upper end surface of the lens barrel 18 of the projection optical system pL. However, the projection system side may be configured as follows: The end of the gas removal side edge 28 faces the side of the lens barrel 18 of the projection optical system pL so that a predetermined gap is formed between the side of the lens barrel 18 of the technical optical system PL. 58 200307979 Furthermore, in this embodiment, although the configuration of the differential exhaust mechanism is provided to prevent vibration from being transmitted between the projection system side gas removal side edge 28 and the projection optical system PL, the projection system can also be used. The side gas removal side edge 28 and the projection optical system pL are connected by a thin film-shaped connecting member. In this case, the connecting member is preferably a film-like member having a reduced absorption substance. This film-like member is outside the film material made of ethylene vinyl alcohol resin (EV〇II resin), and covered with an adhesive to cover the stretchable film made of polyethylene, and further on the inner surface of the film material, The stabilization film formed by Shao is formed by coating with vapor deposition or the like. The EV0H resin can be used under the trade name Noparo of Guarel Corporation. Moreover, the gas removal method of the present invention is applicable not only to a projection exposure device but also to an inspection optical device used for inspection of a projection optical system equipped with a projection exposure device. This embodiment of the inspection optical device is a second embodiment which will be described below. jL 2 Embodiment Taper Next, a second embodiment of the present invention will be described with reference to FIG. 10. Here, the same reference numerals are used for the same or equivalent components as those in the first embodiment described above, and the description thereof is simplified or omitted. This second embodiment relates to a gas removal method that is inherent to the inspection optical device 'used for inspection of the projection optical system pL and has a space in which the inspection optical system is disposed. In FIG. 10, the inspection section 200 constituting the inspection optical device, the projection optical system PL, and the wafer gas purge side edge 103 are shown in a cross-sectional view. Also 'Although not shown, the gas removal method on the reticle side of the inspection optical device (above the projection light 59 200307979 academic system PL) is the same as in the case of the aforementioned stepper, and is widely installed in the projection optical system PL The lower wafer gas purge side edge 103 is the same as the first embodiment described above, so its description is omitted. As shown in FIG. 1 (), the inspection section m constituting the inspection optical device is prepared as follows: The optical system supporting frame 0B 'forms a cylinder whose one end (lower end) is closed and the other end (upper) is open. Shape (cylinder with bottom); the inspection optical system 160 is an optical system constructed in the optical system supporting frame OB, and includes lenses 161, 162, and 163 in order along the z-axis direction; photography Element 164 is a photodetector arranged below the inspection optical system 16; X-axis linear motor MX is used to drive the optical system support frame OB in the χ-axis direction; Υaxis linear motor MΥ is used in the γ-axis direction The driving optical system supports the frame 0B; and the flat plate 15 is fixed to the upper end surface of the optical system support frame 0B. The lens 161 in the inspection optical system 160 is held near the upper end of the optical system support frame 〇 through the lens holder 210, and the lens 161 and the lens holder 210 support the frame more than the optical system. The lens 161 in B is located in the lower space, and becomes airtight. This space is called "Space OC" below. When measuring the aberration of the projection optical system PL using the inspection optical device, as in the first embodiment described above, since the vacuum ultraviolet light is used, the optical system of the vacuum ultraviolet light path supports the inside of the housing (the inside of the space). 'It needs to be replaced with a low-absorbent gas such as nitrogen or a rare gas. Therefore, a through-hole 255 is formed in the optical system support frame 0B from the outside to the inside to serve as an air supply opening. Outside the through-hole 255, a connector 152 200307979 is provided inside the through-hole 255, and an air supply 151 is provided. Low suction is supplied from the gas supply device, and the gas supply pipe 151 is connected. Again, mouth 153. The gas is collected through these gas supply pipes into the space 0C. An optical system support frame ⑽ is formed with a through hole 256 in addition to the above-mentioned through hole 255 as an exhaust opening, and an exhaust pipe 156 is connected to the outside of the through hole through a connector 155. The gas in the space 0C is discharged to the outside of the optical system supporting frame 0B through the exhaust gas f 156 and the like. Thus, the gas in the space 0C is replaced with a low-absorption gas. The X-axis linear motor MX includes a mover 212 'connected to the optical system supporting frame OB and a stator 214 having the X-axis direction as a long-side direction. +212 'is driven along the stator 214 in the X-axis direction, whereby the optical system supporting frame 0B is driven in the X-axis direction by sliding. The sexual motor MΥ is composed of a mover 216 fixed to the lower side of the stator 214 of the X-axis linear motor Mχ, and a stator 218 having the γ-axis direction as the longitudinal direction. The mover 216 is driven in the γ-axis direction along the stator 218, whereby the optical system supporting frame OB is slidably driven in the γ-axis direction together with the aforementioned X-axis linear motor MX. In this way, the optical system supporting frame 0B provided with the inspection optical system 160 and the imaging element 1 64 can be moved in a two-dimensional plane. The flat plate 150 has, for example, a rectangular shape in plan view (viewed from above), and a circular opening 15a is formed in a central portion thereof. The tablet 50 will be described in detail later. In the inspection unit 200 configured as described above, the image formed by the projection optical system is enlarged through the lenses 161 to 163 constituting the inspection optical system 160 and then reflected on the imaging element 164 composed of a CCD, for example, measurement projection 200307979 Optical characteristics (aberrations, etc.) of the optical system PL. In this case, as described above, because the linear motors MX and MY can make the optical system support frame 0B move in two dimensions, it can accept all the image beams from all measurement points in the field of view of the projection optical system. Measure aberrations at various measurement points in the field of view. When the flat plate 150 receives the image beam from each measurement point in the field of view of the projection optical system as described above, the optical system support frame 0B is moved in a two-dimensional plane by the linear motors Mx and Mγ, and has a wafer gas removal side. Dimensions to the extent that the end face below the edge 36 does not protrude from the flat plate. That is, by providing the flat plate 150, a space PO is formed between the projection optical system PL and the wafer gas purge side edge% and the inspection unit 200 in the same manner as in the above-described embodiment. This space p0 is even The inspection unit 200 can move in a two-dimensional direction for inspection and can always maintain an airtight state. As described above, according to the second embodiment, the light path from the projection optical system PL to the imaging element 164 of the inspection unit 200 is replaced with a low-absorptive gas, so that the inspection of the projection optical system hole can be performed with high accuracy. When a CCD is used as the imaging element 164 provided in the optical system supporting frame 0β, it is generally filled in a ceramic package, and a protective glass is provided in front of the ceramic package. However, the protective glass suitable for vacuum ultraviolet light is not good from the viewpoint of transmittance. If fluorite or fluorine-added quartz is attached to the protective glass, the gas in the space between the protective glass and the light receiving surface of the CCD Replacement will become a difficult problem. Those who improve this problem are shown in the third embodiment below. 13 Embodiment Next, a third embodiment 62 200307979 of the present invention will be described with reference to Figs. 11U) and 11 (B). Here, the same reference numerals are used for the same or equivalent components ′ as those in the second embodiment, and the description thereof is simplified or omitted. The third embodiment has the following features: The optical system of the second embodiment supports a frame structure; an arrangement method of the photographing element 164 (CCD, as a detector); and a light transmission window 287 is provided above the CCD. In this embodiment, instead of the optical system support frame 0B of the second embodiment described above, as shown in FIG. 11 (A), an optical system support frame composed of the first part of the frame_ and the second part of the frame 0Bb is used. Body β ,. A groove portion 231 is formed at the boundary portion of the first portion of the frame 0Ba and the second portion of the frame 0Bb. In this groove portion 231, light including fluorite or fluorine-added quartz is transmitted through the window member 287. Part of the frame 〇Ba, _ is held from the upper and lower sides. In this case, the light-transmitting window member 287 is held in point contact with the projections 290 at three points each protruding slightly from the i-th frame oba and the second-part frame _Ba. As described above, the reason for holding (holding) the light through the window member 287 at each of the three points above and below is that if the light is transmitted through the window member 28, the space above and below is firmly fixed in a completely airtight manner. The transmission window 287 will cause stress deformation to some extent. When light is transmitted through the window structure # 287 to separate the upper and lower spaces, and the same kind of low-absorptive gas is supplied, it is preferable to hold at 3 points each as described above. An inspection optical system 160 is provided above the second part frame 胄 OBB, as in the second embodiment. On the 1st. The lower end surface of the trowel frame OBa passes through the O-ring 381 to join the ceramic 兖 package 270 of the holding member with ⑽16 ... state airtightness 63 200307979, and passes through the s-shaped fixing member and bolt 28. , Fixed at 1st.卩 Sub-frame bottom end of BaBa. In this case, as shown in FIG. 11 (B), the ceramic package 270 is formed of a box-like member having a recessed portion 270b at the center of the upper surface, and the upper end surface 270a is set to a high flatness. In addition, the general ceramic packaging system is provided with a protective glass' on the front (upper surface). However, in this embodiment, no protective glass is provided. In the lower part of the CCD164 of the ceramic package body 270, as shown in FIG. 11 (A), a wiring hole 165 is formed to pull out the electrical wiring 27 of the circuit such as the charge transfer control circuit from the CCM64. The wiring hole 165 pulls out the electrical wiring 271 from the wiring hole 165, and is connected to a connection wiring (not shown) externally to prevent the gas on the upper side of the CCD164 from leaking out through the wiring hole 165, thereby enabling wiring to the CCD164. . Second, on the lower side of the ceramic package 270, as shown in FIG. 11 (A), a lug element 272 and a heat sink 274 are provided. The month J describes the white-eared elenium element 272, which has a function of cooling a ceramic package body 270 by supplying a predetermined current through a current wiring connected to the white-eared eletric element 272. The heat sink 274 is provided on the opposite side of the ceramic package 270 of the axle element 272. This heat sink 274, for example, is provided with a liquid distribution f 275 inside, and the liquid pipe m is cooled by passing a cooling liquid from a liquid supply device (not shown) to cool the Peltier element 2? 2. In addition, as the heat dissipation device 274, other devices (such as a cooling fan, etc.) may be used. The reason why the Peltier element 272 and the heat dissipation device 274 are so sighed is 64 200307979. (1) For the Peltier element 272, when the CCD164 detects weak light, the S / N ratio (signal / noise ratio) is improved. If necessary, it is better to cool. (2) For the heat sink 274, the side opposite to the CCD of the Peltier element 272 (the lower surface of FIG. 11 (A)), because the It becomes high temperature, so it is necessary to cool the lower side of the Peltier element 272 so that the temperature does not rise higher than the surrounding temperature (for example, 23.0 °). Here, if the Peltier element 272 is used to cool the CCD 164, the Peltier element 272 The gas near the cooled CCD164, due to convection, etc., will cool the lens disposed above the CCD164 or the gas near the CCD164, which may cause instability in optical performance. Therefore, as described above, a light transmission window member 287 is provided. In this case, The space between the light transmission window member 287 and the CCD164 also needs to be replaced with a low-absorptive gas so that the vacuum ultraviolet light is not absorbed and transmitted well. Therefore, in this embodiment, the air supply pipe is the same as the aforementioned one. 281 through the connection The device 283 is connected to the through-hole holder 7 (formed from the outside of the first part of the frame OBa to the inside to serve as an air supply opening), and an air supply nozzle 285 is provided on the side opposite to the air supply tube 281 of the through hole 257. Through these air supply tubes 281 and the like supply low-absorptive gas into a gas-tightened space GC (formed by a light transmitting window member 287, a first part frame OBa, and a ceramic package 27o) from a gas supply device (not shown). On the other hand, in addition to the aforementioned through hole 257, an exhaust pipe 282 is connected to the through hole 258 (formed inward from the first part of the housing 0Ba as an exhaust opening) through a connector 284. Through these through holes 258 , Exhaust pipe 282, etc., to exhaust the gas in the space GC to the outside. This replaces the gas in the space GC with a low-absorptive gas 65 200307979. Also, if it is necessary to cool the CCD164 to a lower temperature, it is better This is to set the same light transmission window as the light transmission window 287, so that the gas around the cooled ccd 164 is not transmitted to the optical system located above. As described in detail above, according to the third embodiment, the ceramic package is 270 (Containing CCD164 in the opening one Inside the square surface, its light-receiving surface faces the opening) and the end surface 270a around the opening is combined with the i-th frame 〇Ba through the sealing member (0-ring) 381, and is connected to the light-receiving surface of the outside air barrier including CCI) 164 GC inside the space. Therefore, the space (jc) formed by the second part of the housing 〇Ba and the ceramic package 270 is a space with good airtightness. Furthermore, a specific gas having a small absorption characteristic of light incident on the light receiving element is used. (Low-absorptive gas) is supplied to the space GC through a gas supply pipe 28m connected to the i-th frame 〇Ba, and the gas in the space GC is exhausted to the exhaust pipe connected to the i-th blade frame OBa to Outside. As a result, the space Gc can be replaced with a low-absorptive gas # 纟. Therefore, light can hardly be absorbed during the period until the light-receiving surface of the photo-detector is received. The light amount detection of the photodetector can be used to measure the optical characteristics of the shirt optical system PL to improve the accuracy based on the result of the light amount detection. In addition, the third embodiment described above will be used in a space. The gas replacement gas supply t 281 and the exhaust pipe are connected to the i-th part OBa, which is called x service μ, but is not limited to this. An opening can also be formed in the ceramic package 270, and the gas supply pipe 281, The exhaust pipe 282 is connected. In the third embodiment, in order to provide a light transmission window structure 66 200307979 piece 287, although an optical system support frame composed of two partial frames of the first partial frame 〇Ba and the second partial pivot 〇Bb is used 〇B As the optical system support frame, but it is not limited to this. When the light transmission window member 7 is not provided, the ceramic package 270 may be directly fixed to the second frame OBb. The light source of the exposure device is not limited to & laser light source, ArF excimer laser light source, KrF excimer laser light source, etc., for example, 'can also be used: infrared or oscillating from DFB semiconductor laser or fiber laser. Amplify single-wavelength laser light in the visible region, for example, by using a fiber amplifier doped with erbium (or both oblique and mirror), and use non-linear optical crystals to convert the wavelength to higher harmonics of ultraviolet light. Moreover, the magnification of the projection optical system is not only It is a reduction system, and it can also be any of the magnification and magnification systems. In addition, an illumination unit and a projection optical system composed of a plurality of lenses are installed in the exposure device body to perform optical adjustment. At the same time, a wafer stage (including a scanning time scale stage stage) composed of a plurality of mechanical components is installed on the exposure device body, and connecting wiring or piping will constitute a reticle chamber and a wafer chamber. Installed next door, connected to the gas piping system, connected to each part of the control system, and further adjusted (electrical adjustment, operation confirmation, etc.), can make the exposure device 100 of the above embodiment related to the present invention The exposure device is preferably manufactured in a clean room that manages temperature, cleanliness, and the like. The method of manufacturing a standing piece is followed by a description of an embodiment of a method for manufacturing a device using the above-mentioned exposure device in a lithography process. 67 200307979 In the figure, there is shown a flowchart of a manufacturing example of a device (a semiconductor wafer such as 1C or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.). As shown in Fig. 1, first, in step 301 (design step), the function and property of the component are calculated (for example, the circuit design of a semiconductor device, etc.), and a pattern design for realizing the function is performed. Next, in step 302 (photomask making step), a photomask is formed to form the designed circuit pattern. On the other hand, in step 303 (wafer manufacturing step), a wafer is manufactured using a material such as silicon. Next, in step 304 (wafer processing step), use in step 301 ~

v驟303所準備之光罩與晶圓，如後述，以微影技術等在 晶圓上形成實際電路等。接著，在步驟305(元件組裝步驟 )，使用在步驟304所處理之晶圓進行元件組裝。在此步驟 305’按照需要，包含切割製程、打線製程，及封裝製程( 晶片封入）等製程。 最後，在步驟306 (檢查步驟），進行在步驟3〇5所身 作之疋件之動作確認試驗，耐久試驗等之檢查。經過如」 述之製程後元件就完成而出貨。The mask and wafer prepared in step 303, as described later, use lithography technology to form actual circuits on the wafer. Next, in step 305 (component assembly step), the wafer processed in step 304 is used for component assembly. In this step 305 ', as required, it includes a cutting process, a wire bonding process, and a packaging process (wafer encapsulation). Finally, in step 306 (inspection step), the operation confirmation test, endurance test, etc. of the components performed in step 305 are performed. After the process as described in the "components are completed and shipped.

制表示半導體元件之上述步驟斯之詳細流奉 X在圖13,在步驟3戰化步驟），將晶圓表面氧化。 2L312(C：VD步驟），形成絕緣膜於晶圓表面。在Μ =成：驟)’在晶圓上以蒸錢形成電極。在步驟 314(離子植入步驟），將離子植入於曰 、 31卜步驟314,分別構成晶圓處理Ί 。以上之步驟 按照各階段所需要之處理，來選擇^彳^之前處理製程’ 在晶圓處理之各階段，上述前處^程一完成，就實 68 200307979 行如下之後處理製程。在後處理製程，首先，在步驟3i5( 光阻形成步驟），在晶圓塗布感光劑。接著，在步驟316( 曝光步驟），以如上述之微影系統（曝光裝置）及曝光方法， 將光罩之電路圖案轉印於晶圓。其次，在步驟317(顯影步 驟）將所曝光之晶圓顯影，在步驟318 (钱刻步驟），將光 阻所殘留之部分以外的部分之曝光構件㈣刻去除。然後 ’在步驟319 (光阻去除步驟），去除已完成钱刻而變成不 要之光阻。 藉由重複進行此等前處理步驟與後處理步驟，能在晶 圓上形成多層之電路圖案。 使用以上所說明之本實施形態之元件製造方法，因在 曝光步驟㈣316)使用上述第！實施形態之曝光裝置， 故能在長期間維持曝光用光透過率良好而將標線片之圖案 精度良好地轉印於晶圓上。其結果’能提昇高積體度之元 件的生產性。 發明之效果 如以上所說明，依本發明之氣體清除方法，具有能將 配置於光之光路上之物體與光學裝置之 之氣體置換，不必使用大型且重之氣密型遮;== 的效果。 又，依本發明之曝光裝置，具有邊抑制裝置之大型化 、重量化，邊能提高曝光精度的效果。 又，依本發明之元件製造方法，具有能提昇高積體度 元件之生產性的效果。 69 200307979 【圖式簡單說明】 (一）圖式部分 圖1係概略地表示本發明之第1實施形態之曝光裝置 之構成圖。 圖2係表示圖1之裝置之氣體配管的示意圖。 圖3(A)係表示標線片載台RST附近的立體圖，圖3(B) 係標線片載台RST的概略截面圖。 圖4係標線片载台RST的俯視圖。 圖5(A)係表示將照明系統側氣體清除側緣之下端面與 標線片載台接近配置之部分的截面圖，圖5(B)係將接近於 照明系統側氣體清除側緣之標線片載台之面之一部分放大 表不的圖。 圖6 (A )係表示將投影系統側氣體清除側緣之上端面與 標線片載台接近配置之部分的截面圖，圖6(B)係表示將投 影系統側氣體清除側緣與投影光學系統接近配置之部分的 截面圖。 圖7 (A )係表示晶圓氣體清除側緣附近的截面圖，圖 7(B)係將晶圓氣體清除側緣從上側（+Z側）觀察的俯視圖。 圖8係用以說明以在照明單元與照明系統側氣體清除 侧緣之間形成間隙之方式，設置照明系統側氣體清除側緣 時之差動排氣機構的構成圖。 圖9係用以說明變形例之氣體清除方法的圖。 圖1 〇，係將構成本發明第2實施形態之檢查光學裝置 之一部分的檢查部，與投影光學系統及遮蔽機構一起表示 70 200307979 的戴面圖。 圖11(A)係本發明第3實施形態之光學系統支持框體 下端部附近的截面圖，圖U(B)係表示搭載CCD之陶瓷 封裝體的立體圖。 圖12係用以說明本發明之元件製造方法之實施形態的 流程圖。 圖13係表示圖12之步驟304詳細的流程圖。 (二）元件代表符號The detailed flow of the above steps for manufacturing semiconductor devices is shown in FIG. 13 (step 3 and step 3), and the wafer surface is oxidized. 2L312 (C: VD step), forming an insulating film on the wafer surface. At M = Cheng: Step) 'to form electrodes on the wafer by steaming. In step 314 (ion implantation step), the ions are implanted in step 31 and step 314, respectively, to form a wafer processing unit Ί. The above steps are based on the processing required at each stage. ^ 彳 ^ Pre-processing processes are selected. At each stage of wafer processing, once the preceding processes are completed, the following post-processing processes are implemented. In the post-processing process, first, in step 3i5 (photoresist formation step), a wafer is coated with a photosensitizer. Next, in step 316 (exposure step), the lithographic system (exposure device) and exposure method as described above are used to transfer the circuit pattern of the photomask to the wafer. Next, the exposed wafer is developed in step 317 (developing step), and in step 318 (money engraving step), the exposed member other than the portion left by the photoresist is etched and removed. Then, in step 319 (photoresist removal step), the completed photolithography is removed and becomes an unnecessary photoresist. By repeating these pre-processing steps and post-processing steps, a multilayer circuit pattern can be formed on the wafer. The device manufacturing method of this embodiment described above is used, since the above-mentioned step is used in the exposure step (316)! The exposure device of the embodiment can maintain a good light transmittance for a long period of time and transfer the pattern of the reticle to the wafer with good accuracy. As a result, it is possible to improve the productivity of high-volume components. Effects of the Invention As explained above, according to the gas removal method of the present invention, it is possible to replace the gas arranged on the light path of light with the gas of the optical device, without having to use a large and heavy air-tight cover; == effect . In addition, the exposure device according to the present invention has the effect of increasing the exposure accuracy while suppressing the increase in size and weight of the device. In addition, according to the device manufacturing method of the present invention, there is an effect that the productivity of a high-integration component can be improved. 69 200307979 [Brief description of the drawings] (I) Schematic drawing Fig. 1 is a schematic diagram showing the structure of an exposure apparatus according to the first embodiment of the present invention. FIG. 2 is a schematic view showing a gas piping of the apparatus of FIG. 1. FIG. FIG. 3 (A) is a perspective view showing the vicinity of the reticle stage RST, and FIG. 3 (B) is a schematic sectional view of the reticle stage RST. FIG. 4 is a plan view of the reticle stage RST. Fig. 5 (A) is a cross-sectional view showing a portion in which the lower end face of the gas-removing side edge of the lighting system is arranged close to the reticle stage. Part of the surface of the thread carrier is enlarged. FIG. 6 (A) is a cross-sectional view of a portion where the upper end surface of the gas removal side edge of the projection system is arranged close to the reticle stage, and FIG. 6 (B) is a view showing the gas removal side edge of the projection system side and projection optics A cross-sectional view of the part of the system close to the configuration. FIG. 7 (A) is a cross-sectional view showing the vicinity of the wafer gas purge side edge, and FIG. 7 (B) is a plan view of the wafer gas purge side edge viewed from the upper side (+ Z side). Fig. 8 is a structural diagram for explaining a differential exhaust mechanism when a lighting system-side gas purge side edge is provided so that a gap is formed between the lighting unit and the gas system-side purge side edge. FIG. 9 is a diagram for explaining a gas removal method according to a modification. FIG. 10 is a wearing surface view of the inspection unit, which constitutes part of the inspection optical device according to the second embodiment of the present invention, together with the projection optical system and the shielding mechanism. Fig. 11 (A) is a cross-sectional view near the lower end portion of the optical system support frame of the third embodiment of the present invention, and Fig. U (B) is a perspective view showing a ceramic package with a CCD mounted thereon. Fig. 12 is a flowchart for explaining an embodiment of a method for manufacturing a device according to the present invention. FIG. 13 is a detailed flowchart showing step 304 of FIG. 12. (Two) the symbol of the component

22 照明系統倒氣體清除側緣（第1遮蔽構件） 22a 上端面（第2端面） 22b 下端面（第1端面） 24A、24B Y軸線性馬達（驅動裝置） 28 投影系統側氣體清除側緣（第2遮蔽構件） 28a 上端面（第2端面） 28b 下端面（第4端面） 36 晶圓氣體清除側緣（第3遮蔽構件）22 Inverted gas removal side edge of lighting system (first shielding member) 22a Upper end surface (second end surface) 22b Lower end surface (first end surface) 24A, 24B Y-axis linear motor (drive device) 28 Projection system side gas removal side edge 2nd shield member) 28a upper end face (second end face) 28b lower end face (4th end face) 36 wafer gas purge side edge (third shield member)

36b 下端面（第5端面） 50 氣體供應裝置（第1氣體供應系統之一部分， 2氣體供應系統之一部分，第3氣體供應系統之一部分） 60 第1供氣管（第1氣體供應系統之一部分） 61 第1排氣管（第1氣體排氣系統之一部分） 6 7 供氣用核狀凹槽（供氣口） 68 排氣用環狀凹槽（排氣口） 72第2供氣管（第1差動排氣機構之一部分） 71 200307979 73 第2排氣管（第1差動排氣機構之一部分） 77 第1供氣管（第2氣體供應系統之一部分） 78 第1排氣管（第2氣體排氣系統之一部分） 79 真空泵（第1差動排氣機構之一部分，第2差 排氣機構之一部分，第3差動排氣機構之一部分，第 動排氣機構之—部分，帛5㈣排氣機構之_部分） 80供應裝置（第1差動排氣機構之一部分，第2 動排氣機構之一部分，f 3差動排氣機構之一部分，第4 差動排氣機構之-部分，第5差動排氣機構之_部分） · 81第2供氣管（第2差動排氣機構之一部分） 82第2排氣管（第2差動排氣機構之一部分） 83第2供氣管（第4差動排氣機構之一部分） 84第2排氣管（第4差動排氣機構之一部分） 1〇〇 曝光裝置 111第1供氣管（第3氣體供應系統之一部分） 112第1排氣管（第3氣體排氣系統之一部分） 113第2供氣管（第5差動排氣機構之一部分） 鲁 114第2排氣管（第5差動排氣機構之一部分） 119 供氣用環狀凹槽（供氣口） 120 排氣用環狀凹槽（排氣口） 123A〜123C第2供氣管路（第5差動排氣機構之—部分） 124A〜124C第2排氣管路（第5差動排氣機構之一部分） 160 檢查光學系統（光學系統） 164 CCD(光檢測器） 72 200307979 167 168 169 170 172 171 174 176 173 175 25卜 258 270 270a 370 372 369 371 381 383 384 D1 D2 D3 第2供氣管路(第1差動排氣機構之一部分） 第2排氣管路(第1差動排氣機構之-部分） 第2供氣管路(第2差動排氣機構之一部分） 供氣用環狀凹槽（供氣口） 刀 排氣用環狀凹槽（排氣口） 第2排氣管路(第2差動排氣機構之—部分） 供氣用環狀凹槽（供氣口） 排氣用Ϊ哀狀凹槽（排氣口） 第2供氣管路（第4差動排氣機構之_部分） 籲 第2排氣管路(第4差動排氣機構之一 252、253、257貫通孔（供氣用開口） 貫通孔（排氣用開口） 陶瓷封裝體（保持構件） 端面 供氣用環狀凹槽（供氣口） 排氣用環狀凹槽（排氣口） 第2供氣管路（第3差動排氣機構之一部分） 鲁 第2排氣管路(第3差動排氣機構之一部分 0型環（密封構件） 第2供氣管路（第3差動排氣機構之—部分） 第2排氣管路（第3差動排氣機構之一部分 間隙（第1間隙） 間隙（第2間隙） 間隙（第4間隙） 73 200307979 D5 間隙（第5間隙） D6 間隙（第3間隙） ILU 照明單元（照明光學系統、光學裝置） IM 空間（第1空間） MP 空間（第2空間） PL 投影光學系統 PW 空間（第3空間） R 標線片（物體、光罩、特定物體） RST 標線片載台（光罩保持構件、特定物體） W 晶圓（基板） WST 晶圓載台（基板保持構件）36b Lower end face (5th end face) 50 Gas supply device (part of the first gas supply system, part of the 2 gas supply system, part of the third gas supply system) 60 First gas supply pipe (part of the first gas supply system) 61 The first exhaust pipe (part of the first gas exhaust system) 6 7 The nuclear groove (air supply port) for air supply 68 The annular groove (air exhaust port) for exhaust 72 The second air supply pipe (the 1 part of differential exhaust mechanism) 71 200307979 73 2nd exhaust pipe (part of 1st differential exhaust mechanism) 77 1st air supply pipe (part of 2nd gas supply system) 78 1st exhaust pipe (part of 2 part of the gas exhaust system) 79 Vacuum pump (part of the first differential exhaust mechanism, part of the second differential exhaust mechanism, part of the third differential exhaust mechanism, part of the second exhaust mechanism, 帛5㈣Exhaust mechanism part_80) Supply device (part of the first differential exhaust mechanism, part of the second differential exhaust mechanism, f3 part of the differential exhaust mechanism, and fourth of the differential exhaust mechanism- Part, part 5 of the 5th differential exhaust mechanism) · 81 2nd Pipe (part of the second differential exhaust mechanism) 82 second exhaust pipe (part of the second differential exhaust mechanism) 83 second air supply pipe (part of the fourth differential exhaust mechanism) 84 second exhaust Pipe (part of the fourth differential exhaust mechanism) 100 exposure device 111 first gas supply pipe (part of the third gas supply system) 112 first exhaust pipe (part of the third gas exhaust system) 113 second Air supply pipe (part of the fifth differential exhaust mechanism) Lu 114 Second exhaust pipe (part of the fifth differential exhaust mechanism) 119 Ring groove for air supply (air supply port) 120 Ring for exhaust Groove (exhaust port) 123A ~ 123C 2nd air supply line (part of 5th differential exhaust mechanism) 124A ~ 124C 2nd air discharge line (part of 5th differential exhaust mechanism) 160 Inspection optics System (optical system) 164 CCD (light detector) 72 200307979 167 168 169 170 172 171 174 176 173 175 25 258 270 270a 370 372 369 371 381 383 384 D1 D2 D3 2nd air supply line (1st differential row Part of the air mechanism) The second exhaust line (part of the first differential exhaust mechanism) The second air supply line (the second differential exhaust Part of the mechanism) Annular groove (supply port) for air supply Annular groove (exhaust port) for knife exhaust Second exhaust line (part of the second differential exhaust mechanism) Air supply Annular groove (supply port) Sorrow-like groove for exhaust (exhaust port) 2nd air supply line (part of 4th differential exhaust mechanism) Call for 2nd exhaust line (4th difference One of the dynamic exhaust mechanisms 252, 253, 257 through-holes (openings for air supply) through-holes (openings for air supply) ceramic package (holding member) annular grooves for air supply at the end surface (air supply port) for exhaust Ring groove (exhaust port) 2nd air supply line (part of 3rd differential exhaust mechanism) Lu 2nd exhaust line (part of 3rd differential exhaust mechanism 0-ring (sealing member) 2 Air supply line (part of the third differential exhaust mechanism) Part 2 Exhaust line (part of the third differential exhaust mechanism Clearance (first clearance) Clearance (second clearance) Clearance (fourth clearance) 73 200307979 D5 gap (5th gap) D6 gap (3rd gap) ILU lighting unit (lighting optical system, optical device) IM space (first space) MP empty Room (second space) PL projection optical system PW space (third space) R reticle (object, mask, specific object) RST reticle stage (mask holding member, specific object) W wafer (substrate) ) WST wafer stage (substrate holding member)

7474

Claims (1)

200307979 拾、申請專利範圍： 1 種氣體清除方法，係將配置於既定波長光之光路 上的物體與光學裝置之間的空間進行氣體清除，其係包含 以下步驟： 以至；在與該物體、及保持該物體之保持構件中任一 特定物體之間形成既定之第1㈣的狀態下，配置將該光 子裝置與物體之間的空間與外氣阻隔之遮蔽構件的步驟； 及 將對該光之吸收特性比吸收性氣體低的特定氣體，透 過形成於該遮蔽構件之供氣用開口，而供應於該遮 内部之空間的步驟。 2、 如申請專利範圍帛！項之氣體清除方《，其係進一 步包含：將該遮蔽構件内部之空間内的氣體，透過形成於 該遮蔽構件之排氣用開口向外部排氣的步驟。 、 3、 如申請專利範圍帛丨項之氣體清除方法，其中，該 第1間隙係大約3mm以下。 4、 如申請專利H圍第3項之氣體清除方法，其係進一 步包含：透過在該遮蔽構件之與該敎物體對向:端面所 形成的供氣口，將既定之氣體供應於該第丨間隙内，並且 使該第1間隙内之氣體，透過相對於該端面之該空間係位 於該供氣口外侧的排氣口向外部排氣的步驟。 5、 如申請專利範圍第！項之氣體清除方法，其中，續 遮蔽構件，係用以減低對該光學裝置之振動傳達。'、 °" 6、 如申請專利範圍第5項之氣體清除方法，其中，該 75 200307979 遮蔽構件，係以與該光學裝置之間形成既定之第2間隙之 狀態下配置。 7、 如申請專利範圍第6項之氣體清除方法，其中，該 第2間隙係大約3mm以下。 w 8、 如申請專利範圍第7項之氣體清除方法，其係進一 步包含·透過在該遮蔽構件之與該光學裝置對向之端面所 形成的供氣口，將既定之氣體供應於該第2間隙内，並且 將該第2間隙内之氣體，透過相對於該端面之空間係位於 该供氣口外側的排氣口向外部排氣的步驟。 9、 一種氣體清除方法，係將包含使用於光學裝置（具 有照射既定波長光之光學系統）的光檢測器之受光面的空 間進行氣體清除，其係包含以下步驟： 將保持構件（一面形成開口且在内部將該光檢測器以受 光面朝該開口的方式收容）之該開口周圍的端面，透過密 封構件而與該光學裝置之構成零件之一部分結合，以將包 含該光檢測器之受光面之空間與外氣阻隔之步驟；及 將對該光之吸收特性比吸收性氣體低的特定氣體，透 過形成於該構成零件、及保持構件中任一者的供氣用開口 供應於該空間，而將該空間内之氣體，透過形成於該構成 零件、及保持構件中任一者的排氣用開口向外部排氣之步 驟。 10、 如申請專利範圍第9項之氣體清除方法，其係進 一步包含： 在該保持構件之載置該光檢測器之部分，預先形成貫 200307979 通孔的步驟；及 從該光檢測器之背面側，透過該貫通孔，將來自該光 檢測器之電氣配線向外部拉出的步驟。 一 U、如申請專利範圍第Θ項之氣體清除方法，其係進 步包含：將該保持構件冷卻的步驟。 U、如申請專利範圍第u項之氣體清除方法，其中， 該保持構件之冷卻，係在該保持構件之與該光檢測器相反 側之面連接珀耳帖元件來進行。 3如申喷專利範圍第12項之氣體清除方法，其係進隹 一步包含：使該轴耳帖元件之與該保持構件相反側冷卻的 步驟。 4如申專利範圍弟12項之氣體清除方法，其係進 一步包含：在該光學裝置之該構成零件（與保持構件結合） 之與該保持構件相反側配置光透過性構件，將包含該光檢 測器之受光面之空間分隔成複數個空間的步驟。 15、一種曝光裝置，係用以將形成於光罩之圖案轉印 於基板上，其係具備： _ 照明光學系統，係用來以既定波長光照明該光罩； 第1遮蔽構件，係配置於該光罩、及保持該光罩之光 罩保持構件中任一特定物體與該照明光學系統之間，以至 少在與該特定物體之間形成既定之第丨間隙之狀態下，將 該光罩之該照明光學系統側之至少包含對應該光罩之圖案 領域的領域之第1空間與外氣阻隔；及 第1氣體供應系統，係透過形成於該第丨遮蔽構件之 77 200307979 供氣用開口，將對該光之吸收特性比吸收性氣體低的特冑· 氣體供應於該第1空間。 16、 如申請專利範圍帛15$之曝光裝£，其係、進 具備： 投影光學系統’係用以將從該光罩射出之光投射於該 基板上； 第2遮蔽構件，係配置於該特定物體與該投影光學系 統之間，在減低對該投影光學系統之振動傳達之狀態下， 將該光罩之該投影光學系統側之至少包含該光罩之圖案領鲁 域之第2空間與外氣阻隔；及 第2氣體供應系統，係透過形成於該第2遮蔽構件之 供氣用開口將該特定氣體供應於該第2空間。 17、 如申請專利範圍第16項之曝光裝置，其中，第2 遮蔽構件，係以至少在與該特定物體之間形成既定之第2 、 間隙之狀態下配置。 · 18、 如申請專利範圍第17項之曝光裝置，其係進一步 具備： _ 第1氣體排氣系統，係透過形成於該第1遮蔽構件之 排氣用開口將該第1空間内之氣體向外部排氣；及 第2氣體排氣系統，係透過形成於該第2遮蔽構件之 排氣用開口將該第2空間内之氣體向外部排氣。 19、 如申請專利範圍第17項之曝光裝置，其中， 该第1及弟2間隙之至少一方係大約3mm以下。 20、 如申請專利範圍第19項之曝光裝置，其係進一步 78 200307979 具備·差動排氣機構，從形成於該第1遮蔽構件 定物體對向之端面沾说尸 ，、遠特 面的仏氣口，將既定之氣體透過相 端面之第1空間椋仏认# 仙對於吞亥 1係位於该供氣口外側的排氣口向外部排氣 21、如中請專利範圍第19項之曝光裝置，其係進—步 ，備·差動排氣機構’從形成於該第2遮蔽構件之與 定物體對向之端面的祉# >、ηχ特 、'、軋口，將既定之氣體向該特定物體 —且將該第2間隙内之氣體透過相對於該端面之第 2空間係位於該供氣口外側的排氣口向外部排氣。 22如申睛專利範圍第17項之曝光裝置，其係進—步 =以下兩機構中至少—方：設置於該第丨遮蔽構件之特 =體=端部’且能將該· 1間隙在該第1遮蔽構件全 盯魏的調整機構；以及設置於該第2遮蔽構件之特 :物體側之端部’且能將該f 2間隙在該第2遮蔽構件全 周進行調整的調整機構。 ★ 23、如申請專利範圍第17項之曝光裝置，其中，在該 第2遮蔽構件與該投影光學系統之間形成既定之第3心 0 24、 如申請專利範圍第23項之曝光裝置，#中， 3間隙係大約3mm以下。 μ 25、 如申請專利範圍第23項之曝光裝置，其係進一步 :備：差動排氣機構，從形成於該第2遮蔽構件之與該投 影光學系統對向之端面的供氣口，將既定之氣體向該第3 間隙内供應’並且將該帛3間隙内之氣體透過相對於該端 79 200307979 面之第2空間係位於該供 26、如申^…。 卜側的排孤口向外部排氣。 1遮蔽構==:17項之曝光裝置，其中，該第 之與該特定物體;;二 向之端面及該第2遮蔽構件 對向之該::::係均為平面，分別與此等端面 <通特疋物體之面亦皆係平面。 w 27、如申請專利範圍第i7項之曝光裝 板保持構件，係用來保持該基板;及驅:;置一步 2空間之外:少卩分’配置於該第1空間及第 28、 如申請專利範圍第27項之曝光裝置 1遮蔽構件之掃描方向之長度，係至少依據.二、〜弟 光之同步移動時前後之加速域與減速域中 件所移動之助行距離；及該光罩之 =持構 長度來決I $請之~描方向的 29、 如中請專利範圍第17項之曝光裝置， 具備：第3遮蔽構件，配置於該基板與投影光學李统：； ，Γ至少在與該基板之間形成既定之第3間隙之狀=間 將6亥基板之投影光學系統側之第3空間與外氣阻隔；及 3氣體供應系統，透過形成㈣第3遮蔽構件之 口將該特定氣體供應於該第3空間。 只 幵 3〇、如申請專利範圍第29項之曝光裝置，其係進一 具備氣體排氣系統，透過形成於該第3遮蔽構件之排氣用 200307979200307979 Scope of patent application: 1 gas removal method, which removes the gas between the object and the optical device arranged on the light path of a predetermined wavelength, which includes the following steps: A step of arranging a shielding member that blocks the space between the photonic device and the object from outside air in a predetermined first state between any one of the holding members holding the object; and absorbing the light The step of supplying a specific gas having lower characteristics than the absorbent gas through the opening for gas supply formed in the shielding member, and supplying the specific gas to the space inside the shielding member. 2, such as the scope of patent application 帛! The item "Gas removal method" further includes the step of exhausting the gas in the space inside the shielding member to the outside through the exhaust opening formed in the shielding member. 3. The gas removal method according to the scope of patent application (1), wherein the first gap is less than about 3 mm. 4. If the gas removal method for item 3 of the patent application H, it further includes: supplying a predetermined gas to the first through a gas supply port formed on the shielding member opposite to the plutonium object: In the gap, the gas in the first gap is allowed to pass through the space opposite to the end face to the outside through an exhaust port located outside the air supply port. 5, such as the scope of patent application! The gas removal method of the item, wherein the shielding member is continued to reduce the transmission of vibration to the optical device. ', ° " 6. The gas removal method according to item 5 of the scope of patent application, wherein the 75 200307979 shielding member is arranged in a state where a predetermined second gap is formed with the optical device. 7. The gas removal method according to item 6 of the patent application scope, wherein the second gap is less than about 3 mm. w 8. The gas removal method as described in item 7 of the scope of patent application, further comprising: supplying a predetermined gas to the second through a gas supply port formed on an end face of the shielding member facing the optical device. In the gap, the gas in the second gap is passed through a space with respect to the end face to a gas exhaust port located outside the air supply port to the outside. 9. A gas removal method for removing gas from a space containing a light receiving surface of a photodetector used in an optical device (having an optical system that irradiates light of a predetermined wavelength), which includes the following steps: forming a holding member (one side of which has an opening) And the inside of the photodetector is received such that the light-receiving surface faces the opening), the end surface around the opening is combined with a part of the constituent parts of the optical device through a sealing member to combine the light-receiving surface including the light detector A step of blocking the space from outside air; and supplying a specific gas having a light absorption characteristic lower than that of the absorbing gas to the space through a gas supply opening formed in any one of the constituent part and the holding member, In addition, the gas in the space is exhausted to the outside through the exhaust opening formed in any one of the constituent parts and the holding member. 10. The gas removal method according to item 9 of the scope of the patent application, further comprising: a step of forming a through-bore 200307979 through a portion of the holding member on which the photodetector is placed; and from the back of the photodetector Side, a step of pulling out the electrical wiring from the photodetector to the outside through the through hole. U. The gas removal method according to item Θ of the patent application scope, further comprising the step of cooling the holding member. U. The gas removal method according to item u of the application, wherein cooling of the holding member is performed by connecting a Peltier element to a surface of the holding member opposite to the photodetector. 3. The method for purging gas according to item 12 of the patent application, which further comprises a step of cooling the axel element on the opposite side of the retaining member. 4 The gas removal method according to item 12 of the patent application scope, further comprising: arranging a light-transmitting member on the side opposite to the holding member of the component (combined with the holding member) of the optical device, and including the light detection The step of dividing the space of the light receiving surface of the device into a plurality of spaces. 15. An exposure device for transferring a pattern formed on a photomask onto a substrate, comprising: _ an illumination optical system for illuminating the photomask with a predetermined wavelength of light; a first shielding member, configured Between the specific object in the photomask and the photomask holding member holding the photomask and the illumination optical system, at least in a state where a predetermined first gap is formed with the specific object, the light The first optical space on the side of the illuminating optical system side of the cover including at least the area corresponding to the pattern area of the photomask; and the first gas supply system, which is provided through 77 200307979 formed in the first shielding member. The first space is supplied with an ultra-thin gas having a lower absorption characteristic with respect to the light than an absorptive gas through the opening. 16. If an exposure package with a patent scope of $ 15 $ is applied, the system includes: Projection optical system 'is used to project the light emitted from the photomask onto the substrate; the second shielding member is arranged in the Between the specific object and the projection optical system, in a state where vibration transmission to the projection optical system is reduced, the second space of the projection optical system side of the mask including at least the pattern domain of the mask and Outside air barrier; and a second gas supply system that supplies the specific gas to the second space through an air supply opening formed in the second shielding member. 17. The exposure device according to item 16 of the scope of patent application, wherein the second shielding member is arranged at least in a state where a predetermined second gap is formed with the specific object. · 18. If the exposure device according to item 17 of the scope of patent application, it is further equipped with: _ The first gas exhaust system is to direct the gas in the first space through the exhaust opening formed in the first shielding member. External exhaust; and a second gas exhaust system that exhausts the gas in the second space to the outside through an exhaust opening formed in the second shielding member. 19. For the exposure device according to item 17 of the patent application scope, wherein at least one of the first and second gaps is about 3 mm or less. 20. For the exposure device of the 19th scope of the application for patent, it is further 78 200307979 equipped with a differential exhaust mechanism, which attaches the dead body from the end surface of the fixed object facing the first shielding member, The air port allows the predetermined gas to pass through the first space of the phase end face. # Immortal exhaust to the outside of the air supply port of Tunhai 1 is located outside the air supply port 21, such as the exposure device of the patent scope item 19 It is a step-by-step preparation of a differential exhaust mechanism 'from the end of the second shielding member formed on the end surface facing the fixed object # >, ηχ 特,', rolling the predetermined gas to the The specific object—and the gas in the second gap is exhausted to the outside through an exhaust port located outside the air supply port through a second space relative to the end surface. 22 If the exposure device of the 17th patent scope is applied, it is one of the following two steps: at least one of the following two mechanisms: the feature of the shielding member that is set at the body = the end of the body, and the gap of 1 An adjustment mechanism for the first shielding member to fully focus on Wei; and an adjustment mechanism provided at a feature of the second shielding member: the end of the object side, and capable of adjusting the f 2 gap over the entire circumference of the second shielding member. ★ 23. If the exposure device according to item 17 of the patent application scope, wherein a predetermined third heart is formed between the second shielding member and the projection optical system 0 24. If the exposure device according to item 23 of the patent application scope, # The 3 gaps are about 3 mm or less. μ 25. If the exposure device in the scope of patent application No. 23, it is further: preparation: a differential exhaust mechanism, from the air supply port formed on the end surface of the second shielding member opposite to the projection optical system, The predetermined gas is supplied to the third gap, and the gas in the third gap is transmitted through the second space opposite to the end 79 200307979 plane. The solitary port on the Bu side exhausts to the outside. 1 masking structure ==: The exposure device of 17 items, wherein the first and the specific object; the two-way end surface and the second shielding member facing the same :::: are planes, respectively, and so on The end faces < the surfaces of the objects are also flat. w 27. If the exposure mounting plate holding member of item i7 of the scope of patent application is used to hold the substrate; and drive :; placed outside the 2 step space: less points are placed in the 1st space and 28, such as The length of the scanning direction of the shielding device 1 of the exposure device 1 in the scope of the patent application is at least based on the second. The travel distance between the acceleration field and the deceleration field during the synchronous movement of the brother light; and the light The length of the mask is determined by the length of the structure. I. Please refer to the drawing direction. 29. The exposure device of the patent scope item 17 includes: a third shielding member, which is arranged on the substrate and the projection optical system:;, Γ At least a predetermined third gap is formed between the substrate and the substrate = the 3rd space of the projection optical system side of the 6H substrate is blocked from outside air; and the 3 gas supply system is formed through the opening of the third shielding member The specific gas is supplied to the third space. Only 30. The exposure device such as the 29th in the scope of patent application, which is equipped with a gas exhaust system, and is used for exhaust through the third shielding member 200307979 之氣體向外部排氣 將該第3空間内 31、如申請專利範圍第29 3遮蔽構件，係在與該投影光 間隙之狀態下配置。 項之曝光裝置，其中，該第 學系統之間形成既定之第4 ，其係進一步 之與投影光學 之氣體向外部 ，其中，該排 4間隙向外部 32、如申請專利範圍第31項之曝光裝置 具備排氣機構’透過形成於該第3遮蔽構件 系統對向之端面的排氣口，將該f 4間隙内 排氣。 33、如申請專利範圍帛32項之曝光裝置 氣機構’係將該第3間隙内之氣體透過該第 排氣。 34、 如申請專利範圍第33項之曝光裝置，纟中，該第 3 =供應系統，係透過該帛4間隙將該特定 應:於 該第3空間。 35、 如中請專利範圍第29項之曝光裝置，其係進一步 具備：差動排氣機構’從形成於該第3遮蔽構件之與該基 板對向之端面的供氣口，將既定之氣體供應於該第3間隙 内’並且將該帛3間隙内之氣體透過相對於該端面之第3 空間係位於該供氣σ外側的排氣π向外部排氣。 36、 如申請專利範圍第15項之曝光裝置，其中，在該 第1遮蔽構件與照明光學系統之間形成既定之第2間隙。 37、 如申請專利範圍第36項之曝光裝置，其中，該第 2間隙係大約3随以下。 ⑽、如申請專利範圍第36項之曝光裝置，其係進一步 200307979 具備差動排氣機構，從形成於該筮 ，β / 乐1遮蔽構件之與該照明 光學糸統對向之端面的供氣口，脾 n B 时既定之氣體供應於該第 2間隙内，並且將該第2間隙内之々μ 4 眾鬥之乳體透過相對於該端面 之第1空間係位於該供氣口外側的淑 辨乳口向外部排氣。 39、如申請專利範圍第15項 只心曝先裝置，其係進一步 具備：第2遮蔽構件，配置於該基板與該投影光學系統之 間，以至少在與該基板之間形成既定之第2間隙之狀態下 :㈣基板之投影光學系統侧之帛2空間與外氣阻隔；及 弟2氣體供應糸統’透過形成於号p笛 处、〜風π”亥弟2遮蔽構件之供氣用 開口’將特定氣體供應於該第2空間。 40、如申請專利範圍第39項之曝光裝置，其係進一步 具備：氣體排氣機構，透過形成於該第2遮蔽構件之排氣 口’將該第2空間内之氣體向外部排氣。 41、如申請專利範圍第39項之曝光裝置，其中，該第 2遮蔽構件，係在與該投影光學系統之間，形成既定之第3 間隙。 42、 如申請專利範圍第41項之曝光裝置，其係進一步 具備：排氣機構，透過形成於該第2遮蔽構件之與該投影 光學系統對向之端面的排氣口，將該第3間隙内之氣體向 外部排氣。 43、 如申請專利範圍第42項之曝光裝置，其中，該排 氣機構，係將該第2空間内之氣體透過該第3間隙向外部 排氣。 44、 如申請專利範圍第43項之曝光裝置，其中，該第 82 200307979 2氣體供應系統，係透過該第3間隙將該特定氣體供 該第2空間。 、心、 45、 如申請專利範圍第39項之曝光裝置，其係進一步 具備：差動排氣機構，從形成於該第2遮蔽構件之與該^ 板對向之端面的供氣口，將岐之氣體供應於該第2、間二 内，並且將該第2間隙内之氣體透過相對於該端面之第^ 空間係位於該供氣口外侧的排氣口向外部排氣。 46、 如申請專利範圍第39項之曝光裝置，其係 牛 構’設置於該第2遮蔽構件之基板側之端部7 弟2間隙在該第2遮蔽構件全周進行調整。 47、 如申請專利範圍第15項之曝光裝置，其 :備：基板保持構件，用來保持該基板；及驅動農置二 =罩保持構件與該基板保持構件沿既定之掃描方向同步 48、 如申請專利範圍第47項之 1遮蔽構件之掃描方*认且* ，、Τ δ亥弟 光之同步移動時前後二的係至少依據：在進行該曝 件所移動之助行離與減速域中，該光罩保持構 長度來決定。離’及该光罩之圖案領域之掃描方向的 49如申凊專利範圍第48項之曝光妒詈，1由—雄 1遮蔽構件之掃描方向之長戶；進曝=其中，該第 明該光罩之昭明μ ^係、進一步㈣··以該光照 …、月項域之掃描方向的長度來決定。 之圖案透過投^光係用以將曝光用光所照明之光罩 〜先學糸轉印於基板上，其特徵在於具有： 83 200307979 學系統之間，配置 將包含位於該基板 光路的空間與外氣 遮蔽構件，係在該基板與該投影光 成不與該基板與該投影光學系統接觸， 與該投影光學系統之間的該曝光光束之 阻隔。 51、如申請專利範圍第50項之曝光裝置，其係 板與遮蔽構件之間、或該投影光學㈣與遮蔽構件之^ 遮的氣體吸引排氣，藉此’將以該遮蔽構件戶 遮蔽之二間與該外氣阻隔。 、如申請專利範圍第51項之曝光裝置，盆 間所形成的=或該投影光學系統與該遮蔽構件; 氣體低的特定：供氣將對該曝光用光之吸收特性比吸心 • 53 種元件製造方法，係包含微影製程，其特徵 於· 今 5亥微影盤y H，係使用申請專利範圍第15項〜第52項 任-項之曝光裝置來進行曝光。 、The gas is exhausted to the outside. The shielding member 31 in the third space, such as the patent application scope No. 29 3, is arranged in a state with a gap from the projection light. The exposure device according to item, wherein the fourth item is formed between the first system and the gas to the outside of the projection optics, and the gap between the row 4 and the outside is 32, such as the exposure of item 31 in the scope of patent application. The device is provided with an exhaust mechanism 'through an exhaust port formed on the opposite end surface of the third shielding member system to exhaust the f 4 gap. 33. For example, the exposure device for the scope of patent application: item 32. The air mechanism 'is to pass the gas in the third gap through the second exhaust. 34. For the exposure device in the scope of application for item 33, the 3rd = supply system applies the specific application to the 3rd space through the 4th gap. 35. The exposure device according to item 29 of the patent, which further includes: a differential exhaust mechanism 'from a gas supply port formed on the end surface of the third shielding member opposite to the substrate, and set a predetermined gas The gas in the third gap is supplied to the third gap, and the gas in the third gap is exhausted to the outside through the exhaust gas π located outside the supply air σ with respect to the third space of the end surface. 36. The exposure apparatus according to item 15 of the scope of patent application, wherein a predetermined second gap is formed between the first shielding member and the illumination optical system. 37. For the exposure device according to item 36 of the patent application, wherein the second gap is about 3 or less. ⑽. For example, the exposure device in the 36th scope of the patent application, which is further 200307979 equipped with a differential exhaust mechanism, from the air supply formed on the end face of the 乐, Le / 1 shielding member facing the illumination optical system. Mouth, the predetermined gas is supplied to the second gap at the time of spleen n B, and the 4μ 4 masses in the second gap are transmitted through the first space relative to the end face to the outside of the air supply port. Shufan breast vented to the outside. 39. If the patent application scope item No. 15 is only for the first exposure device, it further includes: a second shielding member disposed between the substrate and the projection optical system to form a predetermined second at least between the substrate and the substrate. In the state of the gap: the 帛 2 space on the projection optical system side of the 阻 substrate is shielded from the outside air; and the 22 gas supply system is formed through the 笛 flute, ~ wind π, 弟 2, and Shield 2 for air supply. The opening 'supplies a specific gas to the second space. 40. The exposure device according to item 39 of the patent application range further includes: a gas exhaust mechanism which passes through an exhaust port formed in the second shielding member' to The gas in the second space is exhausted to the outside. 41. The exposure device according to item 39 of the patent application scope, wherein the second shielding member is formed between the second shielding member and the projection optical system to form a predetermined third gap. 42 For example, the exposure device according to item 41 of the patent application scope further includes an exhaust mechanism that passes through an exhaust port formed on an end surface of the second shielding member opposite to the projection optical system, and places the third gap in the third gap. The gas is exhausted to the outside. 43. For example, the exposure device according to item 42 of the patent application scope, wherein the exhaust mechanism exhausts the gas in the second space to the outside through the third gap. 44. If applied The exposure device of the 43rd scope of the patent, wherein the 82 200307979 2 gas supply system is to supply the specific gas to the second space through the 3rd gap. Xin, 45, such as the exposure of the 39th scope of the patent application The device further includes a differential exhaust mechanism for supplying Qi gas to the second and second chambers from an air supply port formed on an end face of the second shielding member facing the panel, and The gas in the second gap is exhausted to the outside through an exhaust port located outside the air supply port through the ^ th space relative to the end face. 46. For example, the exposure device of the 39th scope of the patent application, which is a cattle structure 'The gap 7 provided at the end portion 2 on the substrate side of the second shielding member is adjusted over the entire circumference of the second shielding member. 47. For the exposure device of the scope of application for patent No. 15, it includes: a substrate holding member, To hold the substrate And driving farm two = the cover holding member and the substrate holding member are synchronized in a predetermined scanning direction 48, such as the scanning of the shielding member 1 in the scope of patent application No. 47 * recognition and *, δ δ synchronous synchronization The system of the front and back is at least based on the length of the mask holding structure in the assisted and decelerated fields moved by the exposed part. The distance between the scan direction of the pattern field of the mask and the photomask of the mask is 49. The exposure range of the 48th item of the patent scope is 1 long-male 1 masks the long direction of the member in the scanning direction; the exposure = of which, the light of the light mask of the first light μ μ system, and further ... the light ... The length of the lunar field is determined by the length of the scanning direction. The pattern is transmitted through the projection light system, which is used to transfer the photomask illuminated by the exposure light to the substrate. It is characterized by: 83 200307979 between the academic systems The device is configured to include a space located on the substrate optical path and an external air shielding member, and is arranged to block the exposure beam between the substrate and the projection light without contacting the substrate and the projection optical system, and the projection optical system. 51. If the exposure device for item 50 of the patent application scope, the gas between the panel and the shielding member, or the ^ between the projection optics and the shielding member attracts the exhaust gas, thereby 'will be shielded by the shielding member. Two rooms are blocked from the outside air. For example, the exposure device of the scope of application for the patent No. 51, formed between the basin = or the projection optical system and the shielding member; low gas specificity: the gas supply will have an absorption characteristic of the light used for the exposure than the heart absorption • 53 types The element manufacturing method includes a lithography process, which is characterized in that today's lithography disc y H is exposed using an exposure device of any one of the scope of application patents Nos. 15 to 52. , 拾壹、圖式： 如次頁 84Pick up, schema: as next page 84