TW200305065A - Exposure apparatus and method for manufacturing device - Google Patents

Abstract

The subject of the invention is to make exposure apparatus compact and light. Inside the carrying stage RST (at least can move along the single axis direction inside the moving face roughly perpendicular to the propagation direction of the illuminating light EL), the sustaining space SS is formed and the mask R is sustained in the sustaining space. In addition, on the rear side and the front side of the illuminating light propagation direction of the carrying stage, the first and the second mask trays (2, 3) are disposed respectively with the determined separation gap. At least one part from each face of these trays opposite to the carrying stage is used as the opposite face of the carrying stage having the light transmission portions (2a, 3a). The carrying stage is disposed with the separation gap arranged between the carrying stage and each tray so as to extremely suppress the penetration of external gas into the gap between each tray and the carrying tray, and prevent it from permeating into the sustaining space. Thus, the same effect of coating the entire carrying stage with the isolation wall can be obtained so as to realize compactness and lightness of the entire apparatus.

Description

200305065 玖、發明說明： 【發明所屬之技術領域】 本發明係有關曝光裝置及元件製造方法，更詳細言之 ’係有關使用在半導體積體電路、液晶顯示器等之微細圖 案之形成上較佳之曝光裝置及使用該曝光裝置之元件製造 方法。 【先前技術】 根據習知，用來製造半導體元件（積體電路）、液晶顯 示元件等電子元件之微影製程係使用各種之曝光裝置（將 電子元件之微細圖案形成在基板上）。近年來，主要係使 用縮小投影曝光裝置，該縮小投影曝光裝置係特別從生產 f生方面來看，將形成之圖案按比例放大4〜5倍左右所形成 之光罩或標線片（以下，統稱為「標線片」）之圖案，透過 投影光學系統，縮小轉印在晶圓等之被曝光基板（以下， 考舟為「晶圓」）上。 至於這種投影曝光裝置，為了對應積體電路之微細化 ，來實現高解析度，將該曝光波長轉移成更短波長。現在 ，該波長之主流為KrF準分子雷射之248nm，但更短波長 之ArF準分子雷敎193nm也進入實用化階段。而且，最 近’使用更短波長157nm之ρ2雷射、和波長$ 126測之200305065 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to an exposure device and a method for manufacturing an element, and more specifically, it relates to a better exposure for forming fine patterns used in semiconductor integrated circuits, liquid crystal displays, etc. Device and method for manufacturing element using the exposure device. [Prior art] According to the conventional knowledge, the lithography process for manufacturing electronic components such as semiconductor devices (integrated circuits) and liquid crystal display devices uses various exposure devices (fine patterns of electronic components are formed on a substrate). In recent years, a reduction projection exposure apparatus has been mainly used, and the reduction projection exposure apparatus is a mask or a reticle (hereinafter, Patterns collectively referred to as "reticle") are reduced and transferred onto the exposed substrate (hereinafter, "test" is "wafer") through a projection optical system. As for such a projection exposure device, in order to support the miniaturization of the integrated circuit to achieve high resolution, the exposure wavelength is shifted to a shorter wavelength. At present, the mainstream of this wavelength is 248nm of KrF excimer laser, but the shorter wavelength of 193nm ArF excimer laser has also entered the practical stage. Moreover, the most recent ρ2 laser with a shorter wavelength of 157nm and a wavelength of $ 126

Ah雷射等所謂真空紫外領域之波長帶之光源之投影曝光裝 置之提案也正在進行。 該波長190nm 或水蒸氣強烈吸收 以下之真空紫外光，係被大氣中之氧氣 。因此’將真空紫外光作為曝光用光來 200305065 使用之曝光裝置，為了從曝光用光之光路上之空間，排除 氧氣或水蒸氣等之吸光物質，必須用不吸收曝光用光之氮 氣或氦氣等稀有氣體，將該空間内之氣體進行氣體置換 (gas purge)。例如，將波長i57nm之F2雷射光當作光源之 曝光裝置’係從雷射到晶圓之光路之大部分，必須將殘存 氧氣7辰度抑制在1 ppm以下。 又’因藉由曝光波長之短波長化及光學系統之大數值 孔徑（NA)化’皆能實現高解析度化，故最近，光學系統之 更進一步大NA化之開發也正在進行。可是，為了實現高解 析度，除了投影光學系統之大NA化外，必須減低投影光學 系統之像差。因此，在投影光學系統之製程，利用光之干 /歩來進行波面像差測量，用曝光波長之1/1〇〇〇左右之精度 來測量殘存像差量，根據該測量值，來進行投影光學系統 之調整。 k種南NA化和低像差化係視野越小越容易實現光學系 j 一仁疋，就曝光裝置而言，視野（曝光領域）越大，越能 提问處理此力（生產量）。此處，雖是小視野，但使用大難 之投影光學系統，且音所 I實貝上，為了得到大的曝光領域 _ 曝光中，蔣；^ ' °晶圓仍維持該成像關係之相對掃描之 掃描型投影曝光裝置 /置例如，步進掃描方式之掃描型投影 曝光裝置（即，所媢+ & , r ^ 之知描投影器等）成為最近之主流。 【發明内容】 ，標線 lppm 程 κ在把上述之真空紫外光當作光源之曝光裝I 片附近空間之殘存氧氣或水蒸氣濃度也必須抑制 200305065 度以下。就實現這種方法而言，也 考慮到用大的氣密型之 遮蔽容器（標線片載台室），來被覆 復保持標線片之標線片載 台全體，將其内部(包含標線片載台、標線片)全體 體置換之方法。但是，若採料種遮蔽容器的話，則會使 曝光裝置進行大型化及重量化，半導體工廠之潔淨室内之 每！台曝光裝置之設置面積變更大，設備成本（或運轉成本 )增加，故其結果，半導體元件之生產性降低。又，標線 片附近之靠近變，標線片載台等維護時之作業性降低 ’維護所需要之時間增加，在這方面，半導體元件之生產 性也相對降低。 特別係掃描型投影曝光裝置，在曝光中，因必須高速 掃描標線片’故具備大型之標線片載台，使得被覆該大型 標線台全體之遮蔽容器（標線片載台室）更進一步大型化。 本發明係針對以上之問題，其第1目的係提供一種曝 光襞置，係不降低曝光精度’能實現裝置之小型化、_Proposals for a projection exposure device for a so-called wavelength light source in the vacuum ultraviolet field such as Ah laser are also underway. The wavelength of 190nm or water vapor strongly absorbs the vacuum ultraviolet light below, which is the oxygen in the atmosphere. Therefore, an exposure device using vacuum ultraviolet light as the exposure light for 200305065. In order to exclude light absorbing substances such as oxygen or water vapor from the space on the light path of the exposure light, nitrogen or helium that does not absorb the exposure light must be used. Wait for the rare gas, and perform gas purge on the gas in the space. For example, an exposure device using F2 laser light with a wavelength of i57 nm as a light source is a large part of the optical path from the laser to the wafer, and the residual oxygen must be suppressed to less than 1 ppm. Further, since both the short wavelength of the exposure wavelength and the large numerical aperture (NA) of the optical system can achieve high resolution, recently, the development of a further large NA of the optical system is also being carried out. However, in order to achieve high resolution, in addition to the large NA of the projection optical system, it is necessary to reduce the aberrations of the projection optical system. Therefore, in the manufacturing process of the projection optical system, the wavefront aberration measurement is performed by using the dryness of the light, and the residual aberration amount is measured with an accuracy of about 1/1000 of the exposure wavelength, and the projection is performed according to the measured value. Optical system adjustment. The smaller the field of view of the k types of South NA and low aberration systems, the easier it is to realize the optical system. J Irenji, as far as the exposure device is concerned, the larger the field of view (exposure field), the more able to ask questions to deal with this force (throughput). Here, although it is a small field of view, it is difficult to use a projection optical system, and in order to get a large exposure area _ exposure, Jiang; ^ '° the wafer still maintains the relative scanning of the imaging relationship Scanning type projection exposure device / device For example, a stepwise scanning type scanning projection exposure device (ie, a ++, +, ^ known projection projector, etc.) has become the mainstream recently. [Summary of the Invention], the remarkable line lppm range κ in the space near the exposure device using the above-mentioned vacuum ultraviolet light as the light source must also suppress the residual oxygen or water vapor concentration below 200305065 degrees. In order to realize this method, it is also considered to cover the entire reticle stage holding the reticle with a large air-tight shielding container (the reticle stage chamber), and to (Clip stage, reticle) method of whole body replacement. However, if the material type is used to shield the container, the exposure device will be increased in size and weight, and each of them will be used in a clean room of a semiconductor factory! The installation area of the stage exposure apparatus is changed greatly, and the equipment cost (or operating cost) is increased. As a result, the productivity of the semiconductor device is reduced. In addition, the proximity of the reticle changes, and the workability during maintenance of the reticle stage is reduced. The time required for maintenance is increased, and the productivity of the semiconductor device is also relatively reduced in this respect. In particular, it is a scanning projection exposure device. During exposure, it is necessary to scan the reticle at high speed, so it has a large reticle stage, so that the shielding container (the reticle stage room) covering the entire large reticle is more Further enlargement. The present invention is directed to the above problems. A first object of the present invention is to provide an exposure device without reducing the exposure accuracy.

化。 I 又本發明之第2目的係提供一種元件製造方法，能 提昇高積體度的元件之生產性。 本專利申請專利範圍第1項之發明係一種曝光裝置， 具備： 照明單元（ILU)，係藉由照明光（EL)來照明光罩（R); 投影單元（Ρϋ)，係將形成於該光罩之圖案投影在物體 (W)上； 光罩載台（RST)，在其内部形成可保持該光罩之保持空 200305065 間(⑻’在與該照明光之光路大致垂直之移動面内，至少 能沿單軸方向移動； 第1光罩盤(2)，係隔著既定之第i間隙配置在該光罩 載台之照明單元側，局部設有該照明光可透過之光透過部 (2a) ’且形成有與該光罩載台對向之對向面；及 、第2光罩盤（3)，係隔著既定之第2間隙配置在該光罩 載口之忒杈衫單元側，局部設有該照明光可透過之光透過 部（3a)，且形成有與該光罩載台對向之對向面。 I依本發明，在與照明光之光路大致垂直之移動面，至 少能沿單軸方向移動之光罩載台之内冑，形成保持空間， 在該保持空間内保持光罩。而且，在光罩載台之照明單元 側和投影單元側，分別透過既定之第1、帛2間隙來配置 第卜第2光罩盤。在各^、第2光罩盤之一部份，設置 2光可透過之光透過部，對光罩之各對向面係當作光罩 载°之對向面°即’照明光係、透過第1光罩盤之光透射部 射入到光罩載台之保持空間内，藉由照明光來照明光罩 ’並且，透過光罩之光係從帛2光罩盤之光透過部射出。 又、以和第1光罩盤、第2光罩盤之間分別隔著第1、第2 ^隙的方式來配置光罩載台，而極力抑制外氣透過各盤和 光罩載台之間隙滲入到保持空間内。 ^因此，抓用上述構成，藉此能得到與用隔離壁來被覆 光罩載台全體時之同等效果，能實現曝光裝置全體之小型 、輕量化。又，例如，用吸收照明光小之氣體來置換保 持空間内之情形，與用隔離壁來被覆光罩載台全體，用該 200305065 氣體來置換其内部之情形相♦文，因能減低氣體之使用量， 故能實現降低成本。又’因也能將光罩周邊空間内之吸光 物質濃度抑制低，故結果，曝光精度也不會降低。 在這種情、形下，如申請專利範圍第2項之曝光裝置， 其進一步具備差動減型之第丨^體靜壓料，係設置在 該光罩載台’_ 2光罩盤之對向面，噴射既定氣體， 且吸引該對向面附近空間内之氣體而往外部排t，藉此來 形成該第2間隙。 在這種情形下’如申請專利範圍帛3項之曝光裝置， 其進-步具備差動排氣型之帛2氣體靜壓轴承，係設置在 “罩載。對4第1光罩盤之該對向面，噴射既定氣體 ;並吸引該對向面附近之該帛1間隙内之氣體而往外部排 在這種情形下，如申請專利範圍第4項之曝光裝置， =中’係具有與該㈣氣體之噴射口連通之供氣侧環狀凹 曰〜/ 31 )、及配置在該供氣側環狀凹槽之外環側且與該 无疋氣體之排氣口連通之供氣側環狀凹槽⑶D。 ^主在上述申凊專利範圍第i〜4項之各曝光裝置中， 範圍第5項之曝光裝置，其中，該光罩載台係具有 1載台’形成該光罩保持空間並保持該光罩，·及粗 微動載台，且以可微動的方式保持該 ° 形成/刀別與該第〗、2光罩盤對向之對向面。 在這種情形下，如申請專㈣㈣6項之曝光裝置， 步具備差動排氣型之第】氣體靜壓軸承，係在與該 200305065 作支動載台對向之該粗動載台 單元側之對向面，在與該對 射既定氣體，且吸引該微動 排氣。 之對向面之中，設置在該投影 向面對向之該微動載台之面喷 載台之面附近之氣體並往外部 在這種情形下，如申缚直 μ Τ %專利乾圍第7項之曝光裝置， 其進一步具備差動排氣】 、 孔&之苐2軋體靜壓軸承，係在與該 微動載台對向之該粗動載二 〇α 戰Ό之對向面之中，設置在該照明 早元側之對向面，在血兮斜a 社…4對向面對向之該微動載台之面喷 射既定氣體，且吸引該料叙# W 4 U動載台和該粗動載台間之間隙内 部之氣體並往外部排氣。 在這種情形下，如申請專利範圍第8項之曝光裝置， ”中》亥第1、帛2氣體靜壓軸承之至少一方，具有與該 既疋氣體之噴射σ連通之供氣側環狀凹槽、及配置在該供 氣側環狀凹槽之外環侧且與該既定氣體之排氣口連通之供 氣側環狀凹槽。 在上述申請專利範圍帛5項曝光裝置中，如申請專利 範圍第9項之曝光裝置’其中，該微動載台係形成有該保 持空間。 在上述申請專利範圍第9項之曝光裝置中，如申請專 利範圍第10項之曝光裝置，其中，該微動載台係具備用來 形成該保持空間之側壁； 且，該曝光裝置進一步具備雷射干涉計，係對設於該 側壁外面側的反射構件照射雷射光，根據在該反射構件之 反射面所反射之反射光，來測量該微動載台之位置。 200305065 在上述申請專利範圍第5項之曝光裝置中，如申 利範圍第11項之曝光裝置， 明專 一進步具備對該保持空η μ 應特定氣體之氣體供應機構、及將 0 is 氣之氣體排氣機構之至少一方。 心孔體排 在這種情形下，如切專利範圍第 其進一步具備： +元哀置， 遮蔽構件’係隔著既定之間隙配置成不接觸 盤和該照明單元之至少一太二丄L 九罩 平《主少方，而大致遮蔽該第j 該照明單元間之空間；及 疋早盤和 差動排氣型之密封機構，係設置在該遮蔽構件 第1光罩盤和該照明單元之 f °亥 平疋之至；一方喷射既定之氣體， 吸引該間隙内之氣體並往外部排氣。 且 在上述申請專利範圍第12項之曝光裝置中，如 利範圍第13項之曝光裝置，其進一步具備：對該遮蔽二 内部之形成照明光光路之光路空間供應特定氣體之氣體# 應機構、及將該光路^間内之氣體排氣之排氣機構之至; 一方。 在坆種If形下’如申請專利範圍第J 4項之曝光裝置， 其進一步具備： 遮蔽構件，係隔著既定之間隙配置成不接觸該第2光 罩盤n、、明單元之至少一方，而大致遮蔽該第2光罩盤 和該照明單元間之空間；以及 差動排氣型之密封機構，係設置在該遮蔽構件’對該 第2光罩盤和該投影單元之至少—方，喷射既定之氣體， 12 200305065 且吸引該間隙内之氣體並往外部排氣。 在上述中請專㈣圍第14項之曝_ 利範圍第15項之曝光裝置，其進—步且 Τ如申h專 内部之形成照明光光路之光路空：庫、二對該遮蔽構件 應機構、及將該光路空間内之氣體排體之氣體供 一方。 錢“之排氣機構之至少 申請專利範圍第16項之發明係如申請專利範圍第1〇 項之曝光裝置’其中’該照明光係波I i9Qnm以下 紫外光，該特定氣體係氮氣及稀有氣體兩者之任—種。3 申請專利範圍第17項之發明係如申請專利範圍第Μ 項之曝光裝置，其中，該照明光係㈣19Qnm以下之真空 紫外光，該特定氣體係氮氣及稀有氣體兩者之任一種。 申請專利範圍帛18項之發明係如申請專利範圍第Η 項匕之曝光裝置，其中，該照明光係波们—以下之真空 务外光，该特定氣體係氮氣及稀有氣體兩者之任一種。 申請專利範圍第19項之發明係一種元件製造方法，其 特徵在於：係含有微影製程，該微影製程係使用申請專利 範圍第5項之曝光裝置來進行曝光。 【實施方式】 以下，針對本發明之一實施形態，根據第丨圖〜第 5 (B)圖，加以說明。 第1圖係概略表示一實施形態之曝光裝置1〇〇。該曝 光裳置100係將曝光用照明光（當作照明光，以下，稱為「 曝光用光」）EL，照射在標線片R(當作光罩），在既定之掃 13 200305065 描方向（此處，係在第i圖之紙面左右方向之γ軸方向）， 使該標線片R與晶圓w(當作物體）同步移動，透過投影單 元PU將^線片R之圖案轉印在晶圓W上複數個曝光照射 領域之步進掃描方式之投影曝光裝置，即，所謂之掃描步 進器。 ϋ玄曝光裝置1 0 0係具備·未圖示之光源、照明單元 ILU(係透過送光光學系統，連接在未圖示之光源）、標線片 載cr RST (當作保持標線片R之光罩載台）、投影單元(將 標線片R所射出之曝光用光EL投射到晶圓W上）、晶圓載 台WST(保持晶圓W)、及這些控制系統、以及支持架台BD( 支持構成各部）等。 就該光源而言，此處係使用發出波長約l2〇nm〜l9〇nm 屬於真空紫外光範圍之光源，例如，使用輸出波長為 157nm之氟氣雷射（j?2雷射）。光源係透過未圖示之送光光 學系統（部份包含稱為光束匹配單元之光軸調整用之光學 系統），連接在構成照明單元ILU之照明系統外殼1〇2之一 端。 該光源，實際上，含有照明單元ILU及投影單元PU等 之曝光裝置本體所設置之潔淨室，係設置在另一潔淨度低 之支援室或潔淨室地面之使用空間等。又，就光源而言， 也可使用輸出波長為146nm之氪二聚物雷射（Kr2雷射）、輸 出波長為126nm之氬二聚物雷射（Ar2雷射）等其他真空紫外 光源’或疋可使用輸出波長為1 93nm之ArF準分子雷射、 輸出波長為248nm之KrF準分子雷射等。 200305065 該照明單元ILU之構成係包含有：照明系統外殼1 〇2( 從外部隔離内部）、照度均一化光學系統（包含用既定之關 係位置’配置在其内部之光學積分器）、照明光學系統（由 未圖示之中繼透鏡、可變ND濾光片、標線片遮板、及光路 曾曲用反射鏡所構成）。又，就光學積分器而言，係使用 複眼透鏡、棒形積分器（内面反射型積分器）、或繞射光學 元件等。本實施形態之照明單元，例如，係與日本特開平 6-349701號公報等所揭示者同樣之構成。至於照明單元 ILU，係藉由曝光用光el，用大致均一之照度來照明電路 圖案等所形成之標線片r上之細縫狀之照明領域（係在該標 線片遮板所限定之X軸方向，細長延伸之細縫狀之領域）。 又’ ·在照明糸統外殼1 〇 2内之標線片R側端部附近， 配設了未圖示之平板狀光透過窗。該光透過窗係透過來自 照明單元ILU之曝光用光EL·，並且，具有將照明系統外殼 1 〇2内維持在氣密狀態之功能。又，就光透過窗而言，不 限定在平板狀者，也可將構成照明單元ILU之透鏡氣密地 固疋在照明系統外殼1 〇 2内，藉此也能取代上述光透過窗 〇 又’在構成上述照明單元ILU之光學構件中，就透過 透鏡或照度均一化光學系統、光透過窗之曝光用光EL之構 件材料而言，較佳係使用對真空紫外光之透過率高之螢石 疋’ 一部分也能使用將經基排除到1 〇ppm以下程度， 才乡雜含有1 %左右氟之石英（所謂之改良型石英）。又，不限 於摻雜氟石英，也能使用一般之石英、及僅羥基少之石英 200305065 、及進—步添加氫之石英。Λ，也可使用氟㈣、氣化鐘 等氟化物結晶。 又，在該送光光學系統和照明單元ILU内之維護時， 為了防止從外部滲人之大氣擴散到維護對象之空間以外， 也可在該送光光學系統和照明單A ILU之邊界部分，設置 離由。又’用送光光學系統和照明單元旧内所設置之 任意光學構件來代用這種隔離窗，也可將送光光學系統和 照明早兀ILU内分離成複數個氣密空間。 該支持架台BD係具備第1架台ιιι(設置在潔淨室之 地面F上）和第2架台U2(被第1架台U1支持）。 遺第1架台1U係由設置在潔淨室地面F之複數個（此 處為4個）防振單元13a〜咖（第i圖之紙面内側之防振單 疋13c、13d係未圖示）、腳部⑸〜m(係透過該防振單 疋13a〜13d所設置之複數個，此處為彳個），第}圖之紙 面内側之腳部12c、12d係未圖示）、板狀支持構件“a 這些腳部中，藉由2個腳部…、心，大致水平支持）、 及板狀支持構件llb(藉由剩下的2個腳部l2b、^4， 水平支持）所構成。 该第2架台112係具備：投影系統側盤3(藉由支持構 件Ua、llb來水平支持’作為第2光罩盤）、照明系統 盤2(配置在該投影系統侧盤3上方，作為第丄光罩盤）、 及複數個(此處為4個)支持柱26a〜26d(設置在投影系統 盤3及照明系統側盤2之間，在投影系統側| 3及照明 系、、先側盤2之間，升》成既定間隔，在第1圖中，支持柱 16 200305065 26C、26d係未圖示（參照第4(A)圖、第4(B)圖））。 、此處，若針對照明系統側盤2及投影系統側盤3加以 說明的話’則照明系統側盤2及投影系統側盤3係分別由 天然石、陶瓷、不銹鋼等材質所形成，分別對向側之面（ 即’照明系統側盤2之下面及投影系統側盤3之上面）係被 研磨成凹凸為數//m以下之平滑平面。 菖盤（2、3)之材質為天然石和多孔質陶瓷時，較 佳係在其表面塗上氟樹脂，來防止表面吸附氧氣或水蒸氣 而脫離。 g 在攻些盤（2、3)中，係如第丨圖所示，形成矩形之開 口部2a、3a(係用來作為透過曝光用光之光透過部）。 該標線片載台RST係在構成上述第2架台U2之照明 系、、先側盤2及投影系統側盤3之間，對應各盤，隔著既定 之間隙來配置，保持標線片R，至少能沿Y軸方向移動。 標線片載台RST之位置資訊係透過設置於標線片載台rst 之移動鏡，藉纟第丨圖所示之標線片雷射干涉計9，例如 ，用〇· 5〜lrm左右之解析度來經常測量。又，關於標線片 _ 載台RST之構成、及標線片雷射干涉計9等，容後再加以 更詳述。 邊投影單元PU係用鏡筒109來密閉透鏡（由螢石、氟 化經等氟化物結晶所構成）和光學系統（投影光學系統，由 反射鏡所構成）者。就投影光學系統而言，此處，舉一例 ，例如使用兩側遠心，投影倍率石為1/4或1/5之折射系 統者。因此，如前述，若藉由來自照明單元ILU之曝光用 17 200305065 光EL，來照明標線片R的話，則對應該照明領域部分之⑧ 線片R上之圖案係藉由投影單元ρϋ(投影光學系之杌 小投影在晶圓W上之曝光照射領域之一部份，形成被該、、 光用光EL所照明之圖案部份之縮小像（部分像）。 § 這種投影單元PU係透過設置在鏡筒i 〇9之高度方向 央大致下側之凸緣FLG，藉由後述之晶圓側遮蔽機構^中 以非接觸方式來加以支持。 又’就投影光學系統而言，不限於折射系統，也能使 用反射折射系統、反射系統之任一種。 _ 投影單元PU之下端部係透過複數個防振單元，形 成***在晶圓室40内（係設置在地面F)之狀態。在該晶圓 至40内，設置了晶圓載台WST(保持晶圓w，沿二維方向 動）。 該晶圓載台WST係藉由未圖示之晶圓驅動系統（作為驅 動裝置，例如，係由藉由磁浮型或加壓氣體之靜壓，來進 行浮起之氣浮型之線性馬達等所構成），沿著晶圓載台底 座BS(透過複數個防振單元19，設置在晶圓室4〇内）之上 _ 面，且以非接觸方式，在χγ面内能自由驅動。 實際上，晶圓載台WST係具備χγ台36(在上述之χγ 面内，能自由驅動（包含0 ζ旋轉晶圓工作台35(係搭 載在ΧΥ台36上，保持晶圓）等。在晶圓工作台35上設置 未圖不之晶圓保持器，藉由該晶圓保持器，晶圓w例如藉 由真空吸附來保持。晶圓工作台35係藉由未圖示之驅動系 統’沿Z軸方向及對χγ面之傾斜方向，進行微小驅動。這 18 200305065Into. A second object of the present invention is to provide a component manufacturing method capable of improving the productivity of a component having a high integration degree. The invention of item 1 of the present patent application is an exposure device comprising: an illumination unit (ILU), which illuminates a mask (R) with illumination light (EL); a projection unit (PZ), which will be formed on the The pattern of the photomask is projected on the object (W); the photomask stage (RST) forms a holding space in the interior of the photomask to hold the photomask (200,305,065) (⑻ 'in a moving surface that is substantially perpendicular to the light path of the illumination light) , At least can move in the uniaxial direction; the first mask disk (2) is arranged on the side of the lighting unit of the mask stage through a predetermined i-th gap, and a light transmitting portion through which the illumination light can pass is partially provided (2a) 'An opposing surface facing the mask carrier is formed; and, a second mask disc (3) is a t-shirt arranged at the mask carrier through a predetermined second gap. On the unit side, a light transmitting portion (3a) through which the illumination light can pass is partially provided, and an opposite surface facing the mask stage is formed. According to the present invention, the light beam is moved substantially perpendicular to the light path of the illumination light. Surface, at least inside the mask stage that can move in the uniaxial direction to form a holding space, The mask is arranged on the illumination unit side and the projection unit side of the mask stage through the predetermined first and second gaps, respectively. The second mask plate is arranged on each of the first and second mask plates. There are two light-transmitting parts that can pass through. The opposite sides of the mask are regarded as the opposite sides of the mask load °. It enters into the holding space of the mask stage, and illuminates the mask with illumination light ', and the light transmitted through the mask is emitted from the light transmitting portion of the 帛 2 mask disk. Also, the first mask disk, The reticle stage is arranged with the first and second gaps between the second reticle discs, and it is extremely difficult to prevent outside air from penetrating into the holding space through the gap between each disc and the reticle stage. With the above configuration, the same effect as that obtained when the entire mask stage is covered with a partition wall can be obtained, and the entire exposure apparatus can be made small and lightweight. For example, the holding space can be replaced with a gas that absorbs less illumination light. In the case, the entire mask stage is covered with a partition wall, and the 200305065 gas is used to replace it. The internal situation is related to the fact that since the amount of gas used can be reduced, the cost can be reduced. Also, because the concentration of the light-absorbing substance in the space around the photomask can also be suppressed to a low level, as a result, the exposure accuracy will not be reduced. In this case, the exposure device, such as the second item in the scope of patent application, further includes a differentially-reduced first body static pressure material, which is arranged on the mask stage '_ 2 A predetermined gas is sprayed toward the surface, and the gas in the space near the opposite surface is attracted and discharged to the outside t, thereby forming the second gap. In this case, 'as for the exposure device of the scope of patent application No. 3, Its step-by-step is equipped with a differential exhaust type 帛 2 gas hydrostatic bearing, which is set on a "hood." For the facing surface of the 4th first photomask disc, spray a predetermined gas; and attract the vicinity of the facing surface. In this case, the gas in the gap 1 is discharged to the outside. In the case of the exposure device in the scope of the patent application, the middle is a ring-shaped recess on the gas supply side that communicates with the jet port of the gas. / 31), and is arranged on the outer ring side of the annular groove on the air supply side and is The gas-supply-side annular groove CDD is connected to the exhaust port of the gas. ^ Among the exposure devices of the above-mentioned application patent scope items i ~ 4, the exposure device of scope item 5, wherein the photomask stage has 1 stage to form the photomask holding space and hold the light Cover, and coarse and fine moving stage, and maintain the angle of the formation / knife facing the first and second photomask plates in a movable manner. In this case, if you apply for an exposure device that specializes in 6 items, the second one is a gas-static bearing with a differential exhaust type, which is on the side of the coarse-moving stage unit opposite to the 200305065 supporting stage. The opposite side shoots a predetermined gas at the opposite side and attracts the fretting exhaust gas. Among the opposing faces, the gas set near the surface of the projection direction facing the micro-moving stage sprays the gas near the surface of the stage and goes outside. In this case, as claimed in the patent. The exposure device of 7 items further includes a differential exhaust gas], a hole & 苐 2 rolling body static pressure bearing, which is opposite to the coarse moving load 20α facing the micro-moving stage opposite the trench. Among them, the opposite side that is set on the side of the lighting early element, the predetermined gas is sprayed on the side of the micro-moving stage opposite to the blood-slanting company ... 4 W #U 4 The gas in the gap between the stage and the coarse movement stage is exhausted to the outside. In this case, for example, the exposure device of the eighth patent application, at least one of the "1" and "2" gas hydrostatic bearings has a gas supply side ring that communicates with the σ of the existing gas. A groove, and an air-supply-side annular groove arranged on the outer-ring side of the air-supply-side annular groove and communicating with the exhaust port of the predetermined gas. In the above-mentioned application patent scope 项 5 exposure devices, such as The exposure device according to item 9 of the patent application 'wherein the micro-motion stage is formed with the holding space. In the exposure device according to item 9 of the aforementioned patent application, for example, the exposure device according to item 10 of the patent application, wherein, the The micro-motion stage is provided with a side wall for forming the holding space; and the exposure device further includes a laser interferometer for irradiating laser light to a reflection member provided on the outer side of the side wall, according to the reflection surface of the reflection member. The reflected light is used to measure the position of the micro-motion stage. 200305065 Among the exposure devices in the above-mentioned patent application No. 5 exposure device, such as the exposure device in No. 11 claim scope, it is specifically improved to have this protection. The holding η μ should be at least one of a gas supply mechanism for a specific gas and a gas exhaust mechanism for 0 is gas. In this case, the perforated body is further included in the scope of the patent, such as: The "shielding member" is arranged through a predetermined gap so as not to contact the disc and at least one of the lighting unit of the lighting unit. Nine hoods are flat and "mainly small, and substantially shield the space between the jth and the lighting unit; and A differential exhaust type sealing mechanism is arranged between the first mask plate of the shielding member and f ° of the lighting unit; one side sprays a predetermined gas to attract the gas in the gap and exhaust it to the outside. And in the exposure device of the above-mentioned application patent scope item 12, the exposure scope item 13 further includes: a gas that supplies a specific gas to the light path space that forms the light path of the illuminating light inside the shadow area # 应 机构And the exhaust mechanism for exhausting the gas in the light path ^; one. Under the type of If, the exposure device as in item J 4 of the patent application scope, further comprising: a shielding member, a partition The predetermined gap is arranged so as not to contact at least one of the second mask disk n and the bright unit, but substantially shields the space between the second mask disk and the lighting unit; and a differential exhaust type sealing mechanism is provided. The shielding member is provided at least one of the second mask plate and the projection unit, and sprays a predetermined gas, 12 200305065, and attracts the gas in the gap and exhausts it to the outside. Exposure of 14 items_ The exposure device of item 15 of the benefit range, which is further and the light path of the illumination light path forming the interior of the light tunnel is empty: the library, the corresponding mechanism for the shielding member, and the light path space The gas of the exhaust gas is for one party. At least the invention of the patent application scope No. 16 of the "exhaust mechanism of the money" is the exposure device such as the patent application scope No. 10, where the illumination light is ultraviolet light below I9Qnm. Any one of nitrogen and rare gas in this particular gas system. 3 The invention of item 17 in the scope of patent application is the exposure device of item M in the scope of patent application, in which the illumination light is any one of vacuum ultraviolet light below 19Qnm, nitrogen and rare gas in the specific gas system. The invention with a scope of 18 patent applications is an exposure device such as the scope of the patent application with a scope of Η, in which the illumination light is a vacuum outside light, the specific gas system, nitrogen and a rare gas. . The invention claimed in item 19 of the patent application is a method for manufacturing a component, which is characterized in that it includes a lithography process that uses an exposure device in the application of claim 5 to perform exposure. [Embodiment] An embodiment of the present invention will be described below with reference to FIGS. 5 to 5 (B). FIG. 1 schematically shows an exposure apparatus 100 according to an embodiment. The exposure dress 100 is an exposure illumination light (used as illumination light, hereinafter referred to as "exposure light") EL, which is irradiated onto the reticle R (as a photomask), and is oriented in a predetermined scanning direction 13 200305065. (Here, in the γ-axis direction of the left and right directions on the paper surface in FIG. I), the reticle R is moved synchronously with the wafer w (as an object), and the pattern of the ^ line R is transferred through the projection unit PU The stepwise scanning projection exposure device of a plurality of exposure irradiation areas on the wafer W is a so-called scanning stepper. The Xuanxuan exposure device 100 is equipped with a light source (not shown), an illumination unit ILU (which is connected to a light source (not shown) through a light-transmitting optical system), and a cr RST on the reticle (for holding the reticle R Mask stage), projection unit (projects exposure light EL emitted from reticle R onto wafer W), wafer stage WST (holding wafer W), these control systems, and support stand BD (Supporting the constituent ministries), etc. As far as the light source is concerned, a light source with a wavelength of about 120nm ~ 190nm, which belongs to the vacuum ultraviolet light range, is used. For example, a fluorine gas laser (j? 2 laser) with an output wavelength of 157nm is used. The light source is connected to one end of the lighting system housing 102 constituting the lighting unit ILU through a light transmission optical system (some including an optical system for adjusting an optical axis called a beam matching unit), which is not shown in the figure. This light source is actually a clean room provided in an exposure device body including an illumination unit ILU, a projection unit PU, etc., which is provided in another low-cleanness support room or a use space on the floor of the clean room. As for the light source, other vacuum ultraviolet light sources such as a krypton dimer laser (Kr2 laser) with an output wavelength of 146 nm, an argon dimer laser (Ar2 laser) with an output wavelength of 126 nm can be used, or疋 ArF excimer laser with an output wavelength of 193nm, KrF excimer laser with an output wavelength of 248nm can be used. 200305065 The composition of the lighting unit ILU includes: lighting system housing 102 (isolated from the outside), uniform illumination optical system (including an optical integrator arranged inside it with a predetermined relationship position), and lighting optical system (Consisting of a relay lens (not shown), a variable ND filter, a reticle shield, and a reflecting mirror for the optical path). The optical integrator uses a fly-eye lens, a rod integrator (inner reflection type integrator), or a diffractive optical element. The lighting unit of this embodiment has the same structure as that disclosed in, for example, Japanese Patent Application Laid-Open No. 6-349701. As for the lighting unit ILU, the slit-shaped illumination area (which is defined by the reticle shield) is used to illuminate the reticle r formed by the circuit pattern and the like with the exposure light el, with a substantially uniform illuminance. X-axis direction, slender-shaped slit-shaped area). Also, a flat-shaped light transmission window (not shown) is provided near the end of the reticle R side in the lighting system housing 102. The light transmission window transmits the exposure light EL · from the lighting unit ILU, and has a function of maintaining the inside of the lighting system housing 102 in an airtight state. In addition, the light transmission window is not limited to those having a flat shape, and the lens constituting the lighting unit ILU can be hermetically fixed in the lighting system housing 102, thereby replacing the light transmission window. 'Of the optical components constituting the above-mentioned lighting unit ILU, it is preferable to use a fluorescent material having a high transmittance for vacuum ultraviolet light as a component material for the exposure light EL that passes through a lens or an illumination uniformizing optical system and a light transmission window. It is also possible to use a part of the stone 疋 's quartz (excluding the so-called modified quartz) which contains about 1% of fluorine in order to exclude the bases to less than 10 ppm. In addition, it is not limited to doped fluorite quartz, and ordinary quartz, quartz with little hydroxyl group 200305065, and quartz with further hydrogen addition can also be used. Λ, fluoride crystals such as fluorene and gasification bells can also be used. In addition, during the maintenance of the light transmitting optical system and the lighting unit ILU, in order to prevent the infiltration of the atmosphere from the outside into the space to be maintained, the boundary between the light transmitting optical system and the lighting unit A ILU may also be used. Set away from. In addition, the optical transmission system and the optional optical components provided in the lighting unit are used to replace the isolation window, and the optical transmission system and the lighting unit can be separated into a plurality of air-tight spaces. This support stand BD includes a first stand (located on the floor F of the clean room) and a second stand U2 (supported by the first stand U1). The first stand 1U is composed of a plurality of (here, four) vibration isolation units 13a to 8a (figure 13c, 13d on the paper surface inside the paper surface) (not shown), Feet ⑸ ~ m (the plurality are provided through the anti-vibration sheet a13a ~ 13d, here are）), the feet 12c and 12d on the inside of the paper shown in Figure} are not shown), plate-shaped support The component "a" is composed of two leg portions ..., a heart, which is supported substantially horizontally, and a plate-shaped support member 11b (which is supported horizontally by the remaining two leg portions 12b, 4). The second stage 112 includes a projection system side plate 3 (which is horizontally supported by the supporting members Ua and 11b as a second mask plate), and an illumination system plate 2 (arranged above the projection system side plate 3 as a first丄 mask plate), and a plurality of (here 4) support columns 26a to 26d (located between the projection system tray 3 and the lighting system side tray 2, on the projection system side | 3 and the lighting system, the front side Between the disks 2 rises to a predetermined interval. In the first figure, the support columns 16 200305065 26C and 26d are not shown (see Figures 4 (A) and 4 (B)). Here, if the lighting system side plate 2 and the projection system side plate 3 are described, then the lighting system side plate 2 and the projection system side plate 3 are formed of materials such as natural stone, ceramics, and stainless steel, and the opposite surfaces are respectively (That is, the lower surface of the lighting system side plate 2 and the upper surface of the projection system side plate 3) are polished to a smooth plane with a concave / convex number / m or less. When the material of the pan (2, 3) is natural stone and porous ceramics, It is better to coat the surface with fluororesin to prevent the surface from adsorbing oxygen or water vapor and detaching. G In the tapping plates (2, 3), as shown in the figure, the rectangular openings 2a, 3a are formed. (It is used as a light transmitting portion for transmitting light for exposure.) This reticle stage RST corresponds to each of the illumination system, the front side plate 2 and the projection system side plate 3 constituting the second stage U2. The disc is arranged across a predetermined gap, and the reticle R can be kept at least in the Y-axis direction. The position information of the reticle stage RST is through a moving mirror set on the reticle stage rst.丨 The graticule laser interferometer 9 shown in the figure, for example, with 0.5 Resolutions around lrm are often measured. In addition, the configuration of the reticle _ stage RST and the reticle laser interferometer 9 are described in more detail later. The side projection unit PU system uses a lens barrel 109 Here are hermetically sealed lenses (consisting of fluoride crystals such as fluorite and fluoride) and optical systems (projection optical systems consisting of mirrors). As for the projection optical system, here, for example, use two Telecentric, the projection magnification is 1/4 or 1/5 of the refractive system. Therefore, as mentioned above, if the reticle R is illuminated by 17 200305065 light EL from the exposure from the lighting unit ILU, it should correspond to The pattern on the line segment R in the illumination area is formed by the projection unit ρϋ (a small projection of the projection optics on the wafer W to form a part of the exposure area), which is illuminated by the light EL Reduced image (partial image) of the pattern part. § This projection unit PU is supported in a non-contact manner by a flange FLG provided on the lower side of the center of the lens barrel i 〇9, and is supported by a wafer-side shielding mechanism ^ described later. The projection optical system is not limited to a refractive system, and any of a reflective refractive system and a reflective system can be used. _ The lower end of the projection unit PU is inserted into the wafer chamber 40 (set on the floor F) through a plurality of anti-vibration units. Among the wafers to 40, a wafer stage WST (a wafer w is held and moved in a two-dimensional direction) is provided. The wafer stage WST is driven by a wafer driving system (not shown) (as a driving device, for example, a linear motor of a floating type that is floated by a magnetic floating type or a static pressure of a pressurized gas). Structure), along the wafer stage base BS (through a plurality of anti-vibration units 19 provided in the wafer chamber 40) surface, and can be driven freely in the χγ plane in a non-contact manner. Actually, the wafer stage WST includes a χγ stage 36 (which can be driven freely in the above-mentioned χγ plane (including a 0 ζ rotating wafer stage 35 (mounted on the XY stage 36 to hold the wafer)). A wafer holder (not shown) is provided on the circular table 35, and the wafer w is held by, for example, vacuum suction. The wafer table 35 is driven by a driving system (not shown) along the wafer table 35. The Z axis direction and the tilt direction to the χγ plane are finely driven. This 18 200305065

樣-來’晶圓載台WST，實際上係由複數個載台 所構成，以下’針對晶圓載纟WST藉由晶圓驅動 I x、Y、Z、x軸周圍旋轉之ΘΧ方向、γ軸周圍旋轉之、’二 向、及Ζ軸周圍旋轉之0Ζ方向之6自由 1方 之單一載台者，加以說明。 & ° ’月Μ區動 晶圓載台WST之位詈眘却後、头 伹置貝Λ係透過晶圓工作台35上面所 設置之移動鏡Π，藉由晶圓雷射干涉計(以下 「曰斤 圓：涉計」爪’例如’能用。·5〜lnm左右之解析度經； 測量。 又’實際上’移動鏡係設置成X移動鏡(具有與X軸正 交之反射面）和γ移動鏡（具有與Y軸正交之反射面），對應 該移動鏡，雷射干涉計也設置χ方向位置測量肖χ雷射; 涉計和Υ方向位置測量用γ雷射干涉計，在第i圖中，圖 示了移動鏡17、雷射干涉計18作為代表。又，例如，也 可將晶圓載台之端面進行鏡面加工，來形成反射面(相者 於移動鏡Π之反射面）。又，χ雷射干涉計及¥雷射干; 计係具有複數個測量長軸之多軸干涉計，& 了能測量晶圓 工作=35之X、γ位置之外，也能測量旋轉（偏移（ζ軸周 圍？疋轉-0Ζ旋轉）、縱搖(X軸周圍之旋轉—0χ旋轉) &搖(Υ軸周圍之旋轉_ θ y旋轉))。因此，以下之說明 ’係藉由雷射干涉計丨8來測量晶圓工作台35之X、γ、θ Z、0X之5自由度方向之位置者。 來自上述雷射干涉計18之晶圓載台WST之位置資訊（ 或速度貝Λ )係傳送給未圖示之控制裝置，控制裝置係根 200305065 據晶圓載台WST之位置資訊（或速度資訊），透過晶圓驅動 系統來驅動晶圓載台WST。 又，如本實施形態所述，當把真空紫外領域波長之光 當作曝光用光時，係將照明系統外殼102、投影單元PU之 鏡筒109及晶圓室40内作成氣密構造，對氮氣或稀有氣體 等真空紫外光，用具有高透過率之氣體（以下，一般稱為 「低吸收性氣體」），來置換其内部，藉此從光路，對氧 氣或水蒸氣、碳氫系之氣體等該波長帶之光，必須排除具 有強吸收特性之氣體（以下，一般稱為「吸收性氣體」）。 儀 因此，本實施形態係透過分別連接在照明系統外殼1 〇2、 鏡筒109及晶圓室40内部之供氣管（1〇7、30、24)，例如 ’輸送被控制在22C之既定溫度之氮氣或稀有氣體，透過 排氣管（1 08、31、23)，將内部之氣體排氣，藉此能用低吸 收性氣體，來置換各内部。 又，如第1圖所示，在照明系統外殼i 〇2和照明系統 側盤2間之間隙’設置照明系統側遮蔽機構7(遮蔽來自外 部之氣體滲入到該間隙内），在投影系統側盤3和投影光學 _ 系統PL間之間隙，設置投影系統側遮蔽機構8(遮蔽來自 外部之氣體滲入到該間隙内），在投影單元pu之鏡筒丨〇9 之凸緣FLG和晶圓室40之隔離壁間之間隙，設置晶圓 側遮蔽機構22(遮蔽來自外部之氣體滲入到該間隙内）。 這些遮蔽機構7、8、22係分別藉由未圖示之保持機構 來保持，在與位於上下之構件之間，形成既定之間隙。又 關於這些遮蔽機構7、8、22，容後更加以詳述。 20 200305065 希^系、統±要係藉由未圖示之控 裝置係由CPU、她丨n {罝采構成。控制 M . ROM、RAM等所構成之微電腦（或工作Μ 構成，除了戈料）所 線片R和晶圓W ★ m止 切w卜例如，控制標 動作確實地進行。”~描、晶圓？之步進等’以使曝光 二體二^ ^ 度vV來進Λ二 +γ方向（或—γ方向），用速 朿進订同步掃描’透過晶圓載 曝光領域，沿—γ方 曰曰回w係對 物從標線片R，對晶:w =為了用速…· 根據_唆Μ ®斛 日日 之杈衫倍率），來進行掃描， 根料線片雷射干涉計9、晶圓干涉計 後述之線性馬達（Y軸方 ，、里值，透過 系統，八⑴ 驅動標線片載台RST)、晶圓驅動 速度。 戟σ RST、日日固載台WST之位置及 及B b H控制裝4係根據標線丨雷射干涉計 及晶圓雷射干涉計之測蜃柏 * 丁/y °τ 圓載台m之位置。 透過晶圓驅動系統來控制晶 之構m據第2圖〜第4⑻圖，針對標線片載台rst 之構成4，坪細加以說明。 第2圖係將標線片載台RST省 截面°岡 之立體圖，帛3圖係標線片載台聊之縱 截面圖。又，第4(a)圖 、， 4rRx _ ^ ^ 乐第3圖之A~ A線截面圖，第 ⑻圖係第3圖之B-B線載面圖。The sample-to-wafer wafer stage WST is actually composed of a plurality of stages. Below, for wafer wafer WST, the wafer drives I ×, Y, Z, and x-axis rotation around the x-axis, and γ-axis rotation around the x-axis. A description will be given of a single stage with 6 free 1-square directions in the two directions of 0, 2 and the rotation around the Z axis. &'; The position of the moving wafer stage WST in the month M area is carefully discarded, and the head is placed through the moving mirror Π provided on the wafer table 35, and the wafer laser interferometer (hereinafter " Said Jin Yuan: "Claws" can be used, for example. · Resolution of about 5 ~ lnm; Measurement. Also, "actually" moving mirror is set as X moving mirror (with a reflection surface orthogonal to the X axis) And γ moving mirror (with a reflecting surface orthogonal to the Y axis), corresponding to the moving mirror, the laser interferometer also sets the χ direction position measurement Xiao χ laser; the γ laser interferometer for position measurement and Υ direction measurement, In Fig. I, a moving mirror 17 and a laser interferometer 18 are shown as representative. For example, the end surface of the wafer stage may be mirror-finished to form a reflecting surface (a reflection of the moving mirror Π). Surface). In addition, the χ laser interferometer and ¥ laser interferometer; a multi-axis interferometer with a plurality of measuring long axes, & can measure the wafer work = 35, X, γ position, can also measure Rotation (offset (around the z axis? 疋 turn-0Z rotation), pitch (rotation around the X axis-0χ rotation) & shake (Υ The surrounding rotation _ θ y rotation)). Therefore, the following description is based on the laser interferometer 8 to measure the position of the wafer table 35 in the X, γ, θ Z, and 0X directions of 5 degrees of freedom. The position information (or speed) of the wafer stage WST from the above-mentioned laser interferometer 18 is transmitted to a control device (not shown), and the control device is based on the position information (or speed information) of the wafer stage WST in 200305065. The wafer stage WST is driven by the wafer driving system. As described in this embodiment, when the light in the vacuum ultraviolet range is used as the exposure light, the illumination system housing 102 and the lens barrel 109 of the projection unit PU are used. The wafer chamber 40 has a gas-tight structure. For vacuum ultraviolet light such as nitrogen or a rare gas, a gas having a high transmittance (hereinafter, generally referred to as a "low-absorptive gas") is used to replace the inside thereof, and thereby In the optical path, gas with strong absorption characteristics (hereinafter, generally referred to as "absorptive gas") must be excluded for light in the wavelength band such as oxygen, water vapor, and hydrocarbon-based gas. Therefore, this embodiment is based on the even Air supply pipes (107, 30, 24) inside the lighting system housing 102, the lens barrel 109, and the wafer chamber 40, for example, 'transport nitrogen or a rare gas controlled at a predetermined temperature of 22C and pass through the exhaust pipe (1 08, 31, 23) By exhausting the internal gas, it is possible to replace each interior with a low-absorptive gas. As shown in FIG. 1, on the lighting system housing i 02 and the lighting system side The gap between the discs 2 is provided with a lighting system-side shielding mechanism 7 (shielding gas from the outside from penetrating into the gap), and a projection system-side shielding mechanism 8 is provided in the gap between the projection system side panel 3 and the projection optics_system PL ( To shield the gas from the outside from penetrating into the gap), a wafer-side shielding mechanism 22 is provided between the flange FLG of the lens barrel of the projection unit pu09 and the partition wall of the wafer chamber 40 (shielding from the outside Gas penetrates into this gap). These shielding mechanisms 7, 8, and 22 are respectively held by a holding mechanism (not shown), and a predetermined gap is formed between the shielding mechanism and the upper and lower members. These shielding mechanisms 7, 8, and 22 will be described in more detail later. 20 200305065 The system is controlled by an unillustrated control device, which is composed of a CPU and a computer. Control the microcomputer (or work M structure, except G material) composed of M. ROM, RAM, etc. The wire R and the wafer W are only cut off. For example, the control target operation is performed surely. "~ Tracing, wafer? Stepping, etc. 'to make the exposure two body two ^ ^ degree vV into the Λ two + γ direction (or-γ direction), and use the speed to advance the synchronous scanning' through the exposure area on the wafer, Along the —γ side, the line w is the object from the graticule R, the crystal is: w = for speed ... according to _ 唆 Μ ® the sun and the sun shirt multiplier) to scan, the material line thunder Radiation interferometer 9, wafer interferometer linear motors (Y-axis square, medium-valued, through the system, Hachiman drive reticle stage RST), wafer drive speed. Σσ RST, day-to-day fixed stage The position of the WST and the B b H control device 4 are measured according to the graticule 丨 laser interferometer and wafer laser interferometer measurement cypress * D / y ° τ The position of the round stage m. Controlled by the wafer drive system The structure of the crystal structure m is described in detail with respect to the composition of the reticle stage rst according to Figs. 2 to 4 (Fig. 2). Fig. 2 is a perspective view of the retinal stage RST in the cross section °, Fig. 3 It is a vertical cross-sectional view of the line-table platform chat. Also, Fig. 4 (a), 4rRx _ ^ ^ Le cross-sectional view of line A ~ A in Fig. 3, and ⑻-line is the load surface of line BB in Fig. 3 Illustration.

台RST係如前述，在挾持於照明系統側盤 構成第2架台112)盥招旦^ ^ A 、杈衫糸統側盤3之狀態下，以非接觸 21 200305065 方式保持在第2架台112。該標線片載台 所示，且借拇仏 彳邓第2圖 ” 私線片粗動載台4、及標線片微動載台 該標線片粗勳鄱△ w 口 5(藉由 尺月祖動载台4，從±2方向及+ γ方向 之狀態下進行保持）。 '方向圍住 T線片粗動載台4係具備上板部46a( 測盤2之下士 z…、刊系統 卜万，騰出數微米之微小間隔來配置）、 46c(從投影系測盤^ ^ ^ ^ ^ ^ ^ 板β 血0之上面，騰出數微米之微小間隔來配 、中間部46b(在挾持於上板部46a及下板部46c 狀態下來配置）。 在忒下板部46c之X轴方向兩面側，係透過支持構件 (47a 47b)，设置了線性馬達（rmi、RM2)之可動構件（48a 、傷）（在第2圖中，支持構件47a、動子恤係未圖示， 參照第4(A)圖）。該動子（48a、傷）係藉由與固定構件⑽ 、49b)(沿著γ軸方向加以延設）間之電磁相互作用，沿γ 軸方向驅動’藉此，標線片粗動載台4被# Y軸方向驅動 又，上述定子（49a、49b)也能用支持第2架台112之 第1架台111來支持，但除此之外，也可在潔淨室地面F 上，透過防振機構，設置未圖示之支持機構，藉此來支持 。又，安裝動子（48a、48b)之位置係不限定在該下板部 46c，也可係中間部46b。又，因標線片粗動載台4係藉由 這些動子（48a、48b)來進行加速/減速，故較佳係其安袭位 置（高度方向之位置）與標線片粗動載台4全體之重心位置 一致0 22 200305065 標線片粗動栽台4係如上述，藉由線性馬達“齟、 RM2)，被沿γ軸方向驅動，因照明系統側盤2和投影系統 側盤3之對向面係平行，故即使沿γ抽方向進行 2、3和標線片粗動載台4間之微小間隔也大致保持一定。 在該中間部46b巾，係如第4⑻圖所示，γ轴微小致 動Ι§ ΑΠ、AC2(係由音圈馬達等所構成）和X軸微小致動器 AC3成為崁入之狀態。這些微小致動器ΑΠ〜仏3之動子係 分別透過台保持構件42a、42b、42c，連接在標線片微動 載台5。因此，藉由微小致動器AC1〜AC3之驅動，標線片 微動載台5係沿X、Y方向、及θζ方向(Z軸方向周圍之旋 轉）進行微小驅動。又，本實施形態為了抑制微小致動器 AC1、AC2之溫唐卜斗，猫：甘 、 上升將其一部分凸出在中間部46b之外 側’採用容易進行散熱之構成。 又，在標線片粗動載台4中，在照明系統側盤2和投 影系、，側# 3之間’設置了用來維持既定間隙之差動排氣 里之氣體靜;1轴承、及在與標線片微動載纟5之間，設置 了用來維持既定間隙之差動排氣型之氣體靜壓軸承，關於 這些差動排氣型之氣體靜壓軸承，容後更加以詳述。、 在第2圖中，該標線片微動載台5係具有底面構件55 、隔離壁52(為了被覆該底面構件55之上面而設置來作為 側壁）。 該底面構件55係如第4⑻圖所示，由板狀之構件所 成在，、中央附近，形成矩形之開口 55a，在該開口 …之周邊部，設置複數個(此處為4個)之標線片保持機 23 200305065 構53 〇 該標線片保持機構53係透過底面構件55 -匕所之 真空配管54等’連接在曝光裝置内所設置之未圖示之真空As described above, the stage RST is held on the second stage 112 in a non-contact manner 21 200305065 in a state of being held on the side panel of the lighting system to constitute the second stage 112), and the side panel 3 of the tee shirt system. The reticle carrier is shown in Figure 2 and is shown in Figure 2. "Private thread coarse movement stage 4, and reticle micro movement stage. The reticle coarse movement 鄱 △ w port 5 (by ruler The Yuezu moving stage 4 is held from the ± 2 direction and the + γ state.) The coarse moving stage 4 that surrounds the T-segment 4 is provided with an upper plate portion 46a (the bottom plate of the measuring plate 2 ... The system uses 10,000 to free up a few micrometers to configure. 46c (from the projection plate ^ ^ ^ ^ ^ ^ ^ ^ above the plate β blood 0, free up a few micrometers to match, the middle 46b ( It is placed in a state of being held in the upper plate portion 46a and the lower plate portion 46c.) On both sides in the X-axis direction of the lower plate portion 46c, a linear motor (rmi, RM2) is installed to move through the supporting members (47a to 47b). Member (48a, injury) (in the second figure, the support member 47a and the mover shirt are not shown, refer to FIG. 4 (A)). The mover (48a, injury) is fixed with the member ⑽, 49b) (extended along the γ-axis direction), and driven along the γ-axis direction. 'As a result, the reticle coarse movement stage 4 is driven by the # Y-axis direction, and the stator (49a, 4 9b) It can also be supported by the first stand 111 that supports the second stand 112, but in addition, it is also possible to install a support mechanism (not shown) on the floor F of the clean room through an anti-vibration mechanism to support The position where the movers (48a, 48b) are installed is not limited to the lower plate portion 46c, but may be the middle portion 46b. In addition, the coarse moving stage 4 of the reticle uses these movers (48a, 48a, 48b). 48b) to perform acceleration / deceleration, so it is preferable that the position of the attack (the position in the height direction) is consistent with the position of the center of gravity of the entire reticle coarse movement stage 4 0 22 200305065 The reticle coarse movement planting stage 4 is as described above With the linear motor "龃, RM2), it is driven along the γ axis direction. Since the facing surfaces of the illumination system side plate 2 and the projection system side plate 3 are parallel, even if 2, 3 and the marking line are performed along the γ extraction direction The fine interval between the coarse motion stages 4 is also kept substantially constant. In the middle portion 46b, as shown in FIG. 4A, the γ-axis microactuator I§ ΑΠ, AC2 (consisting of a voice coil motor, etc.) and the X-axis microactuator AC3 are engaged. The mover systems of these micro-actuators AΠ to 仏 3 are connected to the reticle micro-motion stage 5 through the stage holding members 42a, 42b, and 42c, respectively. Therefore, the reticle micro-movement stage 5 is micro-driven in the X, Y, and θζ directions (rotation around the Z-axis direction) by the micro-actuators AC1 to AC3. In addition, in the present embodiment, in order to suppress the warmth of the micro-actuators AC1 and AC2, the cat: Gan, ascends a part of it to protrude outside the middle portion 46b, and adopts a structure that facilitates heat dissipation. Also, in the coarse motion stage 4 of the reticle, a gas static in the differential exhaust gas for maintaining a predetermined gap is provided between the illumination system side plate 2 and the projection system, and the side # 3; 1 bearing, And between the micro-movement load 5 of the reticle, a differential exhaust type gas static pressure bearing is used to maintain a predetermined gap. These differential exhaust type gas static pressure bearings are described in detail later. Described. In FIG. 2, the reticle micro-movement stage 5 includes a bottom surface member 55 and a partition wall 52 (provided as a side wall to cover the upper surface of the bottom surface member 55). As shown in FIG. 4, the bottom member 55 is formed by a plate-like member, and near the center, a rectangular opening 55 a is formed, and a plurality of (here, four) are provided at the periphery of the opening ... Reticle holder 23 200305065 Structure 53 〇 This reticule holding mechanism 53 is connected to an unillustrated vacuum installed in the exposure device through the bottom member 55-vacuum pipe 54 of the dagger.

泵’若標線片R載置在標線片保持機構53上的話，則藉Z 真空果之動作’標線片R被標線片保持機構53吸附保持。 又，上述真空配管54係經由標線片粗動載台4，藉由vcr 氣體連接器等氣體導入端子’導入到標線片微動載台内部 。標線片粗動載台4内之真空配管44係與致動器等所連接 之其他電氣配線同時被束在配線束39,然後連接在真空泵 # 。又，上述真空泵也可設置在曝光裝置内，但也可使:從 半導體工場之真空用配管所供應之真空配管或減麼空氣之 配管，來作為真空源。關於這點，針對以下所說明之真空 泵也是同樣。 / ，…土。r π』貝；f朋邵所構成， 該頂棚部係設置在側壁部上端，在其中央部，如第3圖所 示，形成矩形開口 52a(係具有與用來使曝光用光a通過 :標線片K大致同一大小）。藉由該隔離壁52和該底面構 :公’形成保持標線片之保持空間…又，在頂棚部，形 成與後述之環狀凹槽58、59對向之上端面。 俘拉办在隔離壁52之+ X側面(係標線片微動載台5之 保持玉間SS之外側），传如筮 & ^^^ Ή帛4⑻圖所示，設置了作為反 ::之：面鏡91C。對該平面鏡91c，照射來自該… 狄置之標線片雷射干涉 之μ ^ 之先束，標線片R之X軸方向 -糟由標線片雷射干涉計9e，例如，肖U〜_ 24 200305065 程度之解析度，經常進行檢測。 另外’在底面構件55之—γ側(係隔離壁52之外側， 保持空間SS之外側）端部附近，作為反射面之稜鏡型之角 隅稜鏡9la、91b係透過安裝用構# ma、i〇4b(參照第2 W加以設置。對該角隅稜鏡91a、仙，從標線片雷射干 涉計9a、9b照射雷射光束，標線片“ γ軸方向位置係藉 =線=射干涉言十9a、9b，例如，用〇 5^程度之解 析度，經常進行檢測。又，仏丨A fIf the pump's reticle R is placed on the reticle holding mechanism 53, the reticle R is sucked and held by the reticle holding mechanism 53 by the action of Z vacuum fruit. The vacuum piping 54 is introduced into the reticle micro-movement stage through the reticle coarse-movement stage 4 through a gas introduction terminal such as a vcr gas connector. The vacuum piping 44 in the reticle coarse motion stage 4 is simultaneously bundled with the other electrical wiring connected to the actuator and the like in the wiring harness 39, and then connected to the vacuum pump #. The above-mentioned vacuum pump may be installed in the exposure device, but it is also possible to use a vacuum pipe supplied from a vacuum pipe of a semiconductor factory or a pipe for reducing air as a vacuum source. The same applies to the vacuum pump described below. /, ... soil. The roof portion is formed at the upper end of the side wall portion, and at its central portion, as shown in FIG. 3, a rectangular opening 52a is formed (having an opening for passing the exposure light a: The reticle K is approximately the same size). The partition wall 52 and the bottom surface are configured to form a holding space for holding the reticle ... Also, in the ceiling portion, upper end faces are formed facing the annular grooves 58 and 59 described later. The captive office is located on the + X side of the partition wall 52 (outside of the holding jade SS of the reticle micro-movement stage 5), as shown in Figure 筮 & ^^^ Ή 帛 4⑻, set as a counter :: Of: face mirror 91C. The plane mirror 91c is irradiated with the first beam of μ ^ from the reticle laser interference, the X-axis direction of the reticle R-the reticle laser interferometer 9e, for example, Xiao U ~ _ 24 200305065 resolution, often tested. In addition, near the ends of the -γ side of the bottom surface member 55 (outside of the partition wall 52 and outside the holding space SS), the corners 9a, 91b serving as reflecting surfaces are transmitted through the mounting structure # ma , I〇4b (refer to the 2nd W to set. For this angle 91a, cent, irradiate the laser beam from the reticle laser interferometers 9a, 9b, and the position of the reticle "γ axis direction is borrowed = line = Radiation interference speech 10a, 9b, for example, with a resolution of 0 5 ^, often detection. Also, 仏 丨 A f

』x例如，也可將底面構件H+X 側端面及一γ側端面進行鏡 、角隅稜鏡91a、91b。 來取代上述平面鏡91c 針對標線片粗動載台4所設置之氣體靜壓轴承 根據第3圖，詳細加以說明。 首先，針對標線片粗動載台4和投影系統側盤3之間 為？第成=隔之差動排氣型之氣體㈣承(以下，稱 為第1軸承」），加以說明。 在標線片粗動載台4之下部板46c之底面，在 之概略内側，形成供氣側環狀凹槽3卜在該供氣側環狀 凹：3…卜側’形成排氣側環狀凹槽 氣 ::二透:標線片粗動載…所形成之供氣管： 圖端又該:氣…另-端係連接在未 丁之孔體ί、應裝置。又’在排氣 之一端，該排氣管38之另-端係連接在未圖示之真二38 這種構成係透過供氣管37,從氣體供應裝置所；送之 25 200305065 氮氣或稀有氣體等之低吸收性氣體係透過標線片粗動載台 4内所形成之供氣管路35，從供氣側環狀凹槽3丨噴出，並 且，排氣側環狀凹槽32之周邊氣體係透過排氣側環狀凹槽 2及排氣i路36、排氣管38，被未圖示之真空泵吸引。 藉此，能將標線片粗動載台4從投影系統側盤3，浮起微 並且’形成從内側槽31往外側溝3 2之氣流（參照 第3圖之虛線箭頭），故能阻止外氣（氧氣、水蒸氣）從標線 片粗動載台4之外部滲入到標線片粗動載台4之内部侧（即For example, the bottom surface member H + X side end surface and a γ side end surface may be mirrored, and the corners 91a and 91b may be mirrored. Instead of the above-mentioned plane mirror 91c, the aerostatic bearing provided for the reticle coarse motion stage 4 will be described in detail with reference to Fig. 3. First, what is the difference between the reticle coarse motion stage 4 and the projection system side panel 3? The first component = the gas bearing of the differential exhaust type (hereinafter referred to as the "first bearing") will be described. An air-supply-side annular groove 3 is formed on the bottom surface of the lower plate 46c of the reticle coarse movement stage 4 on the inside, and an air-recess ring is formed on the air-supply side: 3 ... Gas-shaped groove gas :: two penetrations: the thick line of the gas line to form the gas supply pipe: the end of the figure should also: gas ... the other end is connected to the hole body, should be installed. At the other end of the exhaust gas, the other end of the exhaust pipe 38 is connected to the real second 38 (not shown). This structure is transmitted from the gas supply device through the gas supply pipe 37; the 2003-25065 nitrogen or rare gas is sent. The low-absorptive gas system is ejected from the gas-supply-side annular groove 3 丨 through the gas-supply pipe 35 formed in the reticle coarse movement stage 4, and the gas around the exhaust-side annular groove 32 It passes through the exhaust-side annular groove 2 and the exhaust i-channel 36 and the exhaust pipe 38, and is sucked by a vacuum pump (not shown). Thereby, the reticle coarse movement stage 4 can be lifted up from the projection system side disk 3, and the airflow from the inner groove 31 to the outer groove 32 is formed (refer to the dotted arrow in FIG. 3), so that it can prevent outside Gas (oxygen, water vapor) penetrates from the outside of the reticle coarse moving stage 4 to the inside of the reticle coarse moving stage 4 (that is,

開口 4b侧）。這樣一來，帛j轴承能實質性地藉由下板 部46c全體來構成。 尸八_人，針對將標線片粗動載台4和照明系統側盤2之 間乱在化之差動排氣型之氣體靜壓軸承（以下，稱為「第2 軸承」），加以說明。 隹標線片粗動載台 —π γ <上囬，具外緣 既略内側’形成供氣側環狀凹槽27，在該供氣側環狀 二27之外側’形成排氣側環狀凹槽2卜在供氣側環狀Opening 4b side). In this way, the 帛 j bearing can be substantially constituted by the entire lower plate portion 46c. Zheba_person, a differential exhaust type gas static pressure bearing (hereinafter, referred to as a "second bearing") is used between the reticle coarse dynamic stage 4 and the lighting system side plate 2 Instructions.隹 Liner coarse motion stage—π γ < Back, with the outer edge slightly inside, a supply-side annular groove 27 is formed, and an exhaust-side ring is formed outside the supply-side annular two 27. The groove 2 is ring-shaped on the air supply side

::，透過標線片粗動載台4内所形成之供氣管路I 接供氣管37之一端，哕征名啟。” -产 而°亥供虱官37之另一端係連接在未 ::::供應裝置。又，在排氣側環狀凹# :片，動載…所形成之排氣管路36 透、; ϋ，該排氣管38之另-端係連接在未圖示之真空栗 k種構成係透過供氣管37，從氣體 二 氮氣或稀有氣體等之低吸收性 /、…彳傳送: a “ … 虱體，係透過標線片粗… °所形成之供氣管路35，從供氣側環狀凹槽27心 26 200305065 ，並且，排氣側環狀凹槽28之周邊氣體，係透過排氣侧環 狀凹槽28及排氣管路36、排氣管38,被未圖示…泵 吸引。藉此’能在標線片粗動載台4和照明系統側盤？： 能維持既定之間隙，並且’在其之間，形成從内側往 外側之乳流（參照第3圖之虛線箭頭），故能阻止外氣 :水蒸氣)從標線片粗動載台4之外部滲入到標 載 ^之:部側(即，開口㈣。這樣-來，第以承能二 貝性地藉由下板部46a全體來構成。 片微對在標線片粗動載台4之下板部46c和標線 壓軸承(以下，稱為「=Γ 動排氣型之氣體靜 馬第3軸承」），加以說明。 在標線片粗動載台4之上板部46c之上面，開 外側’形成供氣側環狀凹槽33，在該供氣侧環狀凹 之=後形成排氣側環狀凹槽34。在供氣側環狀凹； 氣山粗動載台4内所形成之供氣管路35，連接供 氣體供應裝^，4供U 37之另—端係連接在未圖示之 粗動載I :内又，在排氣側環狀凹槽34，係透過標線片 端，守二μ所形成之排氣f路36，連接排氣管38之一 二軋官38之另一端係連接在未圖示之真空泵。 氮氣係透過供氣管打’從氣體供應裝置所傳送之 台4 5内所广、體等之低吸收性氣體’係透過標線片粗動載 ° $成之供氣管路35，從供氣侧環狀凹槽33喷出 ，、’且，排氣側環狀凹槽34之周邊氣 _ 3…氣… 27 200305065 吸引。 氣體，係將標線片微動二：上故::狀凹槽33所喷射之 體之上壓作用二:由從上述環狀凹槽33所喷射之氣 浮起，藉此達成It載台5係從標線片粗動載台猶 …環狀:槽=广^ ，妒成之間，從環狀凹槽％往環狀凹槽34 / ::山照第3圖之虛線箭頭），藉此能阻止外氣(氧 氣、水蒸氣）從標線月料叙# 、 載二5之心^ 之外部渗入到標線片微動 ，第3軸\= 保持標線片R之空間側）。這樣一來 第3軸承月,實質性地藉由下板部46c來構成。 其次’針對將標線片粗動載台4之 片微動载台5之間氣密化之#叙^ , a孝&線 丁 Γ 孔在化之差動排軋型之氣體靜壓軸承（以 下，稱為第4軸承」），加以說明。 在標線片粗動載台4之上板部46a之下面，開口切之 外側#成供氣側環狀凹槽58，在該供氣侧環狀凹槽Μ 之更外側，形成排氣侧環狀凹槽59。在供氣側環狀凹槽Μ ’透過標線片粗動載台4内所形成之供氣管路35，連接供 …7之-端’該供氣管37之另一端係連接在未圖示： 氣體供應裝置。又’在排氣側環狀凹# 59 ’係透過標線片 ,動載台4内所形成之排氣管路％，連接排氣管38之一 糕，”玄排氣管38之另一端係連接在未圖示之真空泵。 k種構成係透過供氣管37，從氣體供應裝置所傳送之 28 200305065 氮氣或稀有氣體等之低吸收性氣體，係透過標線片粗動载 台4内所形成之供氣管路35，從供氣側環狀凹槽μ喷出 ，並且，排氣側環狀凹槽59之周邊氣體，係透過排氣側環 狀凹槽59及排氣管路36、排氣管38，被未圖示之 < 吸引。 具工泵 此處’實際上係在環狀凹槽58、59之下方，近接配置 標線片微動載台5之上端面，故在標線片微動载台5 線片粗動載台之上板部46a之間，能維持既定間隔，並: ，在環狀凹槽58和環狀凹槽59之間，從環狀凹：拄 狀凹槽59,形成氣流(參照第3圖之虛線箭頭）。：此，二 此能阻止外氣（氧氣、水蒸氣）從標線片微動載台曰 J:)到標4片微:載台5之内部側(即’保持標線片R之： 才 =)/廷樣一來，第4轴承能實質性地藉由上板部46a來 又’標線片粗動載台4和標線片微動载 動量係藉由線性馬達一 2來修正標上:裁之IT: 位=制程度之微少量，具體而言’係數"m程度： ;動rr述之標線片微動載台5之上τ端面，桿線片 粗動載台4所進行之差動排氣(即，藉由第3、第乂:片 差動排氣），其氣體喷射量及吸引量即使很少有t 成問題。又，當近接配置之兩者端面且有充八0’也不 且具有氣密性時，在標線片粗 :、：之固滑性， …，有時也可不設置轴承(即載；:、^ 藉由以上所說明之第〗〜第 之軸承）。 弟4轴承，各台係非接觸支 29 200305065 持，並且’標線片R係透過保持空間内之標線片粗動載台 4和照明系統侧盤2、投影系統側盤3間之間隙，及標線片 粗動載台4和標線片微動載台5間之間隙，大致完全阻止 從外部流入氣體。 此處’如第3圖所示’將標線片粗動載台4所連接之 供氣管37内流通之氮氣或稀有氣體之__部分，透過在桿線 片粗動載台…從供氣管路35分歧之供氣支管⑽“ 221b)，從標線片粗動載台4所形成之開口乜及開口 4b之 側壁流入到該開口内’藉此能實現將氮氣或稀有氣體供應· 到保持空間SS内。另一方面，透過從排氣管路％所分歧 之排氣支管（222a、222b)，從開口（4a、4b)之側壁，將保 持空間SS内之氣體排氣之構成’藉此能實現氣體排氣機構 。藉由這些氣體供氣機構及氣體排氣機構，加上上述氣密 化’能將保持標線片R之空間内，藉由吸收曝光用光少之 氮氣或稀有氣體等，來加以置換…也能將供氣支管 221a、221b設置在供氣側環狀凹槽58、和開口 、扑之 間。 · 在第1圖中，該照明系統側遮蔽機# 7係由遮蔽構件 7a等所構成，該遮蔽構件7a料作為韻構件，係對昭 明系統外# 102和照明系統側盤2,透過既定之間隙，藉 由未圖示之保持機構來保持，如帛5⑷圖所*，作成且^ 内部空間IS之圓筒狀形狀。 八 在》亥遮咸構件7a之上端面，形成具有圓環狀形狀之第 !供氣槽89、和直徑較該第1供氣槽89大之第！排氣槽 30 200305065 之第2二二: 端面’形成具有圓環狀形狀 =供氣槽88、和直徑較該第2供氣槽88大之第2排 :槽I這些第】供氣槽89和第2供氣槽⑽係 =:牛：内所形成之複數個(例如，3個)供氣管㈣， 所形成:=7二第2排氣槽㈣係分別連接遮蔽構件73内 料成之複數個（例如，3個）排氣管路以。 ==:7a之外部’其-端部係連接未圖：氣 體仏應4置所連接之供氣管81之 …係從遮蔽構…外部，其:二=氣管 之真空泵所連接之排氣管82之另一端部。’、 圖不 ,又’除此之外，在遮蔽構件7a中，為了從其外部連通 到内部"1 IS，形成氣體供應管 P連通 -，在氣體供應管…一端，V:::， 氣體供應裝置所連接之氣體供氣管 ：不之 係連接啥嘴110 ^ 其另一端 直-1連接去 氣體排氣管路117外側之一端， « :、 接未圖示之真空泵所連接之排氣管90之另一端 若依以上構成之照明系統側遮蔽機構7料 應2構對内部空間IS供應氮氣或稀 氣體排氣管路117、氛艚姚务其通過 之氣體被置換為氮氣或稀有氣體。 〜間IS内 透、i、乳g 8卜供氣管路85，從氣體供應機構供 31 200305065 應氮氣或稀有氣體等之氣體，藉此，從供氣槽89 系統外殼102之下端部和遮蔽構件化之上端部間之間隙、， 供應上述氣體，並且，透過排氣管路84、排氣管82，藉由 真空系，真空吸引間隙内之氣體，藉此，在上述間隙内曰， 形成從内側往外側之氣流。::, Connect one end of the gas supply pipe 37 through the gas supply pipe I formed in the coarse movement stage 4 of the reticle, and the name will be opened. -The other end of the lice officer 37 is connected to the non-:::: supply device. In addition, a ring-shaped recess on the exhaust side #: sheet, dynamic load ... The exhaust pipe 36 formed by the transparent, ϋ, the other end of the exhaust pipe 38 is connected to a vacuum pump k (not shown), and the system is transmitted through the gas supply pipe 37 from the low absorption of the gas dinitrogen or rare gas, etc. 彳: a " … The lice body is thick through the marking line ... ° The air supply pipe 35 formed from the air supply side annular groove 27 center 26 200305065 and the gas around the exhaust side annular groove 28 is transmitted through the exhaust The air-side annular groove 28, the exhaust pipe 36, and the exhaust pipe 38 are attracted by a pump (not shown). With this, can the coarse movement stage 4 and the side panel of the lighting system be used for the reticle? : It can maintain a predetermined gap, and a milk flow from the inside to the outside is formed (refer to the dotted arrow in Figure 3), so it can prevent outside air: water vapor) from moving the stage coarsely from the reticle 4 The outside penetrates into the mark ^: the part side (that is, the opening ㈣. In this way, the first and second parts are constructed by the entire lower plate portion 46a. The micro-micro-on-line coarse movement stage 4. The lower plate portion 46c and the reticle pressure bearing (hereinafter referred to as "= Γ gas-exhaust type gas static horse third bearing") will be described. On the reticle rough movement stage 4, the upper plate portion 46c On the upper side, the air-supply-side annular groove 33 is formed on the outer side, and the air-supply-side annular groove 34 is formed after the air-supply-side annular recess. The air-supply-side annular recess is formed on the air-supply side. The gas supply pipe 35 formed in 4 is connected to the gas supply device ^, and the other end of 4 is U 37 is connected to a rough moving load (not shown) I: inside, an annular groove 34 on the exhaust side, It is through the end of the marking line, and the exhaust f-way 36 formed by the two μs is connected to one of the exhaust pipes 38. The other end of the second rolling officer 38 is connected to a vacuum pump (not shown). The low-absorbent gases, such as the wide and the small ones, transported from the gas supply device through the platform 45 are coarsely loaded through the reticle, and the gas is discharged from the annular groove 33 on the gas supply side. ，，， Moreover, the peripheral gas _ 3… gas… 27 200305065 of the annular groove 34 on the exhaust side is attracted. The gas is slightly moved by the marking line. Action two: The air sprayed from the above-mentioned annular groove 33 floats, thereby achieving that the It carrier 5 is coarsely moved from the reticle to the stage ... annulus: slot = 广 ^, between envy, from The circular groove% goes to the circular groove 34 / :: shanzhao (the dotted arrow in Fig. 3), so as to prevent outside air (oxygen, water vapor) from the marking line month material description # ， 载 二 5 心 ^ The outside penetrates into the reticle slightly, and the third axis \ = keeps the space side of the reticle R). In this way, the third bearing month is substantially constituted by the lower plate portion 46c. Secondly, for the air-tightening of the micro-moving stage 5 between the reticle coarse moving stage 4 and the air-tight bearing of the differential row rolling type of the hole row ( Hereinafter, it is referred to as a "fourth bearing"). Below the upper plate portion 46a of the reticle coarse movement stage 4, the opening is cut to the outside #to form an air-supply-side annular groove 58, and on the outer side of the air-supply-side annular groove M, an exhaust side is formed.环 槽 59。 The annular groove 59. The gas-supply-side annular groove M 'passes through the gas supply pipe 35 formed in the coarse movement stage 4 of the reticle, and is connected to the-end of the supply pipe 7'. The other end of the gas supply pipe 37 is connected to an unillustrated: Gas supply. And 'circular recess # 59' on the exhaust side is the exhaust pipe formed in the moving stage 4 through the reticle, and is connected to one of the exhaust pipes 38, "the other end of the exhaust pipe 38. It is connected to a vacuum pump (not shown). The k types of structure are 28 200305065 nitrogen or rare gas, etc., which are transmitted from the gas supply device through the gas supply pipe 37, and pass through the inside of the coarse motion stage 4 of the reticle. The formed gas supply pipe 35 is ejected from the gas supply side annular groove μ, and the surrounding gas of the exhaust side annular groove 59 passes through the exhaust side annular groove 59 and the exhaust pipe 36, The exhaust pipe 38 is attracted by an unillustrated < tool pump here is actually located below the annular grooves 58 and 59, and the upper end surface of the micro-movement stage 5 is arranged close to the marking plate, so Spool micro-movement stage 5 Between the plate portions 46a on the shim coarse-movement stage, a predetermined interval can be maintained, and: between the annular groove 58 and the annular groove 59, from the annular recess: 拄The groove 59 forms an air flow (refer to the dashed arrow in Fig. 3) .: This can prevent outside air (oxygen, water vapor) from the micro-movement stage of the reticle to J :) to 4 pieces of micro: the inner side of stage 5 (that is, 'retaining the reticle R: only =) / As a result, the fourth bearing can substantially move the reticle by the upper plate portion 46a. The micro-momentum momentum of the stage 4 and the reticle is corrected by the linear motor 1-2: the IT of the cutting: the position = the slight amount of the degree of control, specifically the 'factor " m degree:; On the τ end surface of the wire micro-movement stage 5, the differential exhaust by the rod wire coarse-motion stage 4 (ie, by the third and third: differential air exhaust), its gas injection amount and suction Even if the quantity is rarely t, it is a problem. Also, when the two end faces of the close configuration are filled with 80 'and they are not airtight, the thickness of the reticle is thick, ..., and sometimes It is also possible not to provide bearings (that is, load;:, ^ through the above-mentioned first to the seventh bearings). Brother 4 bearings, each unit is non-contact support 29 200305065, and the 'reticle R is through the holding space The gap between the coarse reticle stage 4 and the side plate 2 of the lighting system 3, and the lateral plate 3 of the projection system, and the gap between the coarse reticle stage 4 and the fine reticle stage 5 are almost completely prevented. The gas flows in from the outside. Here, as shown in Fig. 3, the __ part of the nitrogen or rare gas flowing in the gas supply pipe 37 connected to the reticle rough moving stage 4 is passed through the stub rough moving stage. … The gas supply branch pipe ⑽ "221b) branched from the gas supply pipe 35, flows into the opening from the opening 乜 formed by the reticle coarse movement stage 4 and the side wall of the opening 4b ', thereby realizing nitrogen or rare gas Supply · In the holding space SS. On the other hand, through the exhaust branch pipes (222a, 222b) branched from the exhaust pipe%, and the side walls of the openings (4a, 4b), the structure of exhausting the gas in the holding space SS is formed. Exhaust mechanism. These gas supply mechanisms and gas exhaust mechanisms, coupled with the above-mentioned air-tightening, can replace the space in which the reticle R is held by absorbing nitrogen or a rare gas with little light for exposure ... The gas supply branch pipes 221a and 221b can be provided between the gas supply side annular groove 58 and the opening and the flap. · In Figure 1, the lighting system side shielding machine # 7 is composed of a shielding member 7a and the like. The shielding member 7a is used as a rhyme component to the outside of Zhaoming System # 102 and the lighting system side plate 2. The gap is held by a holding mechanism (not shown), as shown in Figure 5 *, and a cylindrical shape of the internal space IS is made. Eighth, the first air supply groove 89 having an annular shape is formed on the end surface of the upper part 7a, and the second air supply groove 89 is larger in diameter than the first air supply groove 89! Exhaust tank 30 200305065 No. 22: The end surface is formed to have an annular shape = air supply groove 88, and the second row having a larger diameter than the second air supply groove 88: the grooves I and the air supply groove 89 And the second air supply trough system =: cattle: a plurality of (for example, 3) air supply pipes 内 formed inside, formed: = 7 2 the second exhaust trough system is connected to the shielding member 73 and is made of material Plural (for example, 3) exhaust lines. ==: The exterior of 7a'- its end is not shown in the figure: the gas pipe should be connected to the gas supply pipe 81 connected from the shielding structure ... the outside, the second = exhaust pipe 82 connected to the vacuum pump of the gas pipe On the other end. '、 图 不, 又' In addition, in the shielding member 7a, in order to communicate from the outside to the inside " 1 IS, a gas supply pipe P is formed-, at the gas supply pipe ... at one end, V :::, The gas supply pipe connected to the gas supply device: the other end is connected to the nozzle 110 ^ The other end is straight -1 connected to one end of the gas exhaust pipe 117 outside, «:, connected to the exhaust gas connected to a vacuum pump (not shown) If the other end of the tube 90 is based on the lighting system-side shielding mechanism configured above, it should be configured to supply nitrogen or a lean gas exhaust line 117 to the internal space IS, and the gas passed by it will be replaced with nitrogen or a rare gas. The internal IS, i, milk 8 b gas supply pipe 85 supplies 31 200305065 gas or nitrogen gas from the gas supply mechanism, and from the air supply tank 89 the lower end of the system housing 102 and the shielding member The gap between the upper ends is supplied, and the above-mentioned gas is supplied, and the gas in the gap is sucked by the vacuum system through the exhaust pipe 84 and the exhaust pipe 82, thereby forming a slave in the gap. Inside to outside airflow.

同樣地，在遮蔽構件75之下面側，也從供氣槽I 對遮蔽構件7b之下端面和照明系統側盤2之上端面間之間 I錢上述氣體，並且，從排氣槽86，將_内之氣體Similarly, on the lower side of the shielding member 75, the above-mentioned gas is also provided between the lower end face of the shielding member 7b from the air supply groove 1 and the upper end face of the side panel 2 of the lighting system, and from the exhaust groove 86, the _ Gas inside

排氣’藉此’在間隙内，形成從内側往外侧之氣流。 /即，與前述之標線片載台RST之情形同樣，透過照明 系統侧遮蔽_ 7之上側及下侧之間隙，能阻止氣體從外 部滲入到内部空間IS。即，藉由這種構成，能實現遮蔽構 件7a之上下端面之密封機構。 此處，照明系統側遮蔽機構7，其照明系統外殼ι〇2The exhaust gas ′ thus forms an air flow from the inside to the outside in the gap. / That is, as in the case of the reticle stage RST described above, by shielding the gap on the upper side and the lower side of the lighting system side_7, the gas can be prevented from penetrating into the internal space IS from the outside. That is, with this structure, a sealing mechanism for the upper and lower end faces of the shielding member 7a can be realized. Here, the lighting system side shielding mechanism 7 and its lighting system casing ι〇2

係傳達，系統外殼102，照明單&⑽之性能不會惡 化。但是，實際上，照明系統側遮蔽機構7,較與照明 系先外4 1 02或照明系統側H 2之任—方接觸，也不傳達 動故也可使任一方之端面接觸，並加以固定。這種情 形佳係在其接觸面，設£ Q形環等，來提高氣密性。 又，當兩端面採用軸承時，較佳係保持照明系統側遮蔽機 構7之保持機構與支持架台BD另外設置。 為了將照明糸統側遮蔽機構7和與此近接配置之 物體（照明系統外殼1()2或照明系統側# 3)之間隔能調整 32 200305065 到最佳，也可設置能伸縮及能調整斜度之波紋管（bel 1〇ws) 及驅動機構。 在第1圖中，關於該投影系統側遮蔽機構8，係與上 述照明系統側遮蔽機構7同樣之構成。 即，投影系統側遮蔽機構8係具備遮蔽構件8a等，如 第5(B)圖所示，配置在投影系統側盤3和投影單元pu之 間，對這些，透過既定之間隙，藉由未圖示之保持機構來 保持’作成具有内部空間SP之圓筒形狀，作為遮蔽構件。 對遮蔽構件8a之内部空間SP，從未圖示之氣體供應 鲁 裝置，透過氣體供應管183、氣體供應管路218、噴嘴219 ’供應氮氣或稀有氣體，透過氣體排氣管路2Π、氣體排 氣管190，藉由未圖示之真空吸引機構，將内部空間sp内 之氣體排氣，藉此來進行内部空間SP内之氣體置換。 又，從供氣槽（188、189)，對遮蔽構件8a之上側及下 側之間隙’供應氮氣或稀有氣體，並且，從排氣槽（1別、 187)，吸引間隙内之氣體，藉此，在任一間隙，形成從内 側往外側之氣流，故能阻止氣體從遮蔽構件8a之外部渗入 _ 到空間SP。即，藉由這種構成，能實現遮蔽構件8&之上 下端面之逸、封機構。 又，投影系統側遮蔽機構8，因其投影系統側盤3和 投影單元PU係非接觸，故投影系統側盤3之振動係傳達到 投影單元PU，其成像性能不惡化。但是，實際上，投影系 統側遮蔽機構8，其投影系統侧盤3及投影單元pu之任一 方即使接觸，振動也不會傳達給另一方，故也可使任一方 33 200305065 之端面接觸，並加以固定。這種情形，較佳係在其接觸面 設置〇形環，來提高氣密性。 藉由以上之構成，能從外氣遮蔽從照明系統單元ILU( 外殼102)到投影單元PU(鏡筒1〇9)之曝光用光之光路。 在第1圖中’在投影光學系統PL之鏡筒丨09之凸緣 FLG下面和晶圓室40之隔離壁20上面之間，在藉由未圖 示之保持機構保持之狀態下，配置晶圓側遮蔽機構22，在 泫第3遮蔽機構22之上面和凸緣flg之下面間，及第3遮 蔽機構22之下面和晶圓室4〇之隔離壁2〇之上面間，形成 既定之間隙。 該晶圓侧遮蔽機構22也和上述之第丨、第2遮蔽機構 7、8同樣之構成，在晶圓側遮蔽機構22之上端面及下端 面，形成從其内部往外部之氣流。藉此，能阻止晶圓側遮 蔽機構22之外部氣體滲入到第3遮蔽機構22之内部空間 〇 這樣一來’設置晶圓側遮蔽機構22，藉此，能極力抑 制外氣滲入到晶圓室4〇内。 由以上之說明可知，照明系統侧遮蔽機構7之氣體供 應機構係由未圖示之氣體供應機構、氣體供應管83、氣體 供應官路118、噴嘴丨丨9所構成，照明系統側遮蔽機構7 之排氣機構係由未圖示之真空泵、氣體排氣管9〇、氣體排 氣管路117所構成。又，投影系統側遮蔽機構8之氣體供 應機構係由未圖示之氣體供應機構、氣體供應管183、氣 體供應官路218、噴嘴219所構成，投影系統側遮蔽機構8 34 200305065 之排氣機構係由未圖示之真空泵、氣體排氣管190、氣體 排氣管路217所構成。 如以上詳細之說明，若依本實施形態之曝光裝置的話 貝J在與曝光用光El之行進方向大致垂直之移動面内，至 少能沿Y軸方向移動之標線片載台RST之内部，形成保持 空間SS ’在該保持空間内，保持標線片R。並且，在標 線片栽台RST之曝光用光EL之行進方向之後側和前側，分 別隔著既定之間隙，配置了照明系統側盤2、投影系統側 盤3 °對這些盤之標線片載台RST之各對向面，至少在一 ^刀被作為具有開口（2a、3a)(成為照明光之通路）之標 線片載台RST之移動導引面。即，曝光用光EL係透過照明 系統側盤2之開口 2a，射入到標線片載台RST之保持空間 SS内，藉由曝光用光EL來照明標線片R，並且，透過標線 片R之光係從投影系統側盤3之開口 3a射出。又，在照明 系、、’先側盤2和投影系統側盤3之間，隔著既定之間隙來配 置軚線片載台，藉此，能極力抑制外氣滲入到保持空間 SS(透過各盤和標線片載台RST之間隙）内。 、因此，採用上述構成，藉此能得到與用大型之隔離壁 來被覆私線片载台全體時同等之效果，能實現曝光裝置全 體之小型化、輕量化。又，當用吸收照明光小的氣體來置 換保持空間SS内部時，用隔離壁被覆標線片載台全體，與 用A氣體來置換保持空間ss内部時，能減低氣體使用量， 能實現降低成本。 又，藉由第1軸承、第2軸承，在標線片載台RST(更 35 200305065 詳細係標線片粗動載台4)和照明系統側盤2和投影系統側 盤3之間，因形成從其内侧往外側之氣流，故能阻止外氣 參入到保持空間SS之内部，能更提高保持空間ss之氣密 性。 又，藉由第3軸承、第4軸承，透過標線片粗動載台 4和標線片微動載台5之間隙，能阻止外氣滲入到保持空 間SS内。 又，因標線片載台RST之所有軸承係設置在標線片粗 動載台4側，故能實現標線片微動载台5之輕量化，能提 參 同‘線片微動載台之位置控制精度，而且能提高曝光精度 〇 又，因藉由從標線片粗動載台4側所導入之真空配管 54能實現標線片微動載台5中之標線片R之吸附，故與直 接導入真空配管54到標線片微動載台5内之情形相較:、能 極力抑制因配管而限制真空配管54之移動。 另外’設置照明系統侧遮蔽機構7、投影系統側遮蔽 機構8’藉此能從外氣遮蔽從照明單&則（照明系統統外# 殼102)到投影單元PU(鏡筒1〇9)之曝光用光之光路。並且 ’用氮氣或稀有氣體等之低吸收性氣體來置換曝光用光之 光路所配置之空間，藉此，暖古田止> / 糟此曝先用先之吸收能受到控制， 能實現高精度之曝光。 又，本實施形態係在標線片微動載台5之保持空間外 側，設置標線片微動截A Rr里、„丨s 勒戰口 5之位置測量所使用之反射鏡， 對違反射鏡’照射來自雷4 目雷射干涉计之雷射光，藉此來測量 36 200305065 標線片微動載台之位置，故在氣體置換空間不配置干涉計 光路，不受氣體置換精度變動所造成之測量誤差之影響。 因此’能提高標線片載台之位置控制性能，而且實現提高 曝光精度。It is conveyed that the performance of the system housing 102 and the lighting unit & 不会 will not deteriorate. However, in reality, the lighting system-side shielding mechanism 7 is in contact with any one of the lighting system 4 1 02 or the lighting system side H 2 and does not convey any movement. Therefore, the end surface of either side can be contacted and fixed. . In this case, Q-rings are provided on the contact surface to improve air tightness. When bearings are used on both end faces, it is preferable that the holding mechanism for holding the lighting system side shielding mechanism 7 and the support stand BD are separately provided. In order to adjust the interval between the lighting system side shielding mechanism 7 and the object (lighting system housing 1 () 2 or lighting system side # 3) close to it to the best, 2003 200365 can also be set. Degree bellows (bel 10ws) and driving mechanism. In the first figure, the projection system-side shielding mechanism 8 has the same configuration as the above-mentioned lighting system-side shielding mechanism 7. That is, the projection system-side shielding mechanism 8 is provided with a shielding member 8a and the like, and is arranged between the projection system side panel 3 and the projection unit pu as shown in FIG. 5 (B). The holding mechanism shown in the figure holds a cylindrical shape having an internal space SP as a shielding member. For the internal space SP of the shielding member 8a, a gas supply device (not shown) is supplied through the gas supply pipe 183, the gas supply pipe 218, and the nozzle 219 'to supply nitrogen or a rare gas, and through the gas exhaust pipe 2Π, the gas exhaust The air pipe 190 exhausts the gas in the internal space sp by a vacuum suction mechanism (not shown), thereby replacing the gas in the internal space SP. In addition, nitrogen or a rare gas is supplied from the air supply tanks (188, 189) to the gaps between the upper side and the lower side of the shielding member 8a, and the gas in the gaps is sucked from the exhaust tanks (1, 187), and As a result, an airflow from the inside to the outside is formed at any gap, so that the gas can be prevented from penetrating into the space SP from the outside of the shielding member 8a. That is, with this structure, the escape and sealing mechanism of the upper and lower end faces of the shielding member 8 can be realized. In addition, since the projection system side shielding mechanism 8 is in non-contact with the projection system side disk 3 and the projection unit PU, the vibration system of the projection system side disk 3 is transmitted to the projection unit PU, and its imaging performance does not deteriorate. However, in fact, if the projection system side shielding mechanism 8 has any one of the projection system side plate 3 and the projection unit pu in contact, the vibration will not be transmitted to the other party. Be fixed. In this case, it is preferable to provide an O-ring on the contact surface to improve air tightness. With the above configuration, the light path of the exposure light from the lighting system unit ILU (the housing 102) to the projection unit PU (the lens barrel 109) can be shielded from outside air. In the first figure, a crystal is arranged between the bottom of the flange FLG of the lens barrel of the projection optical system PL09 and the top of the partition wall 20 of the wafer chamber 40 in a state held by a holding mechanism (not shown). The round-side shielding mechanism 22 forms a predetermined gap between the upper surface of the third shielding mechanism 22 and the lower surface of the flange flg, and between the lower surface of the third shielding mechanism 22 and the upper surface of the partition wall 20 of the wafer chamber 40. . The wafer-side shielding mechanism 22 also has the same structure as the first and second shielding mechanisms 7 and 8 described above, and an air flow from the inside to the outside is formed on the upper and lower end surfaces of the wafer-side shielding mechanism 22. Thereby, it is possible to prevent the external air of the wafer-side shielding mechanism 22 from penetrating into the internal space of the third shielding mechanism 22. In this way, the wafer-side shielding mechanism 22 is provided, and the penetration of external air into the wafer chamber can be suppressed as much as possible. Within 40. As can be seen from the above description, the gas supply mechanism of the lighting system-side shielding mechanism 7 is composed of a gas supply mechanism (not shown), a gas supply pipe 83, a gas supply circuit 118, and a nozzle 丨 9; the lighting system-side shielding mechanism 7 The exhaust mechanism is composed of a vacuum pump (not shown), a gas exhaust pipe 90, and a gas exhaust pipe 117. The gas supply mechanism of the projection system-side shielding mechanism 8 is composed of a gas supply mechanism (not shown), a gas supply pipe 183, a gas supply circuit 218, and a nozzle 219. The projection system-side shielding mechanism 8 34 200305065 is an exhaust mechanism. It consists of a vacuum pump, a gas exhaust pipe 190, and a gas exhaust pipe 217 (not shown). As explained in detail above, if the exposure apparatus according to this embodiment is used, at least the inside of the reticle stage RST that can move in the Y-axis direction in a moving plane that is substantially perpendicular to the traveling direction of the exposure light El. A holding space SS ′ is formed in which the reticle R is held. In addition, the illumination system side disk 2 and the projection system side disk 3 ° are arranged on the rear side and the front side of the exposure light EL in the traveling direction of the reticle planting stage RST with a predetermined gap, respectively. At least one opposite surface of the stage RST is used as a moving guide surface of the reticle stage RST having an opening (2a, 3a) (which becomes a path for the illumination light). That is, the exposure light EL passes through the opening 2a of the side plate 2 of the illumination system, and enters the holding space SS of the reticle stage RST. The reticle R is illuminated by the exposure light EL, and passes through the reticle. The light of the sheet R is emitted from the opening 3a of the side plate 3 of the projection system. In addition, the cymbal film stage is arranged with a predetermined gap between the lighting system, the first side plate 2 and the projection system side plate 3, thereby suppressing the penetration of outside air into the holding space SS (through each Disc and reticle stage RST). Therefore, by adopting the above-mentioned configuration, the same effect as that obtained when the entire private thread sheet stage is covered with a large-sized partition wall can be obtained, and the entire exposure apparatus can be reduced in size and weight. In addition, when the inside of the holding space SS is replaced with a gas that absorbs less illumination light, the entire reticle stage is covered with a partition wall, and when the inside of the holding space ss is replaced with A gas, the amount of gas used can be reduced, and the reduction can be achieved. cost. In addition, the first bearing and the second bearing are located between the reticle stage RST (35, 35,050,65 detailed reticle coarse movement stage 4), the lighting system side plate 2 and the projection system side plate 3, An airflow is formed from the inside to the outside, so that outside air can be prevented from entering the inside of the holding space SS, and the airtightness of the holding space ss can be further improved. In addition, the third bearing and the fourth bearing can prevent outside air from penetrating into the holding space SS through the gap between the reticle coarse movement stage 4 and the reticle fine movement stage 5. In addition, because all the bearings of the reticle stage RST are arranged on the 4 side of the reticle coarse movement stage, the weight of the reticle micro movement stage 5 can be reduced, and reference can be made to the same as the `` reticle micro movement stage ''. Positional control accuracy and exposure accuracy can be improved. Also, the vacuum pipe 54 introduced from the reticle coarse movement stage 4 side can adsorb the reticle R in the reticle fine movement stage 5, so Compared with the case where the vacuum piping 54 is directly introduced into the reticle micro-movement stage 5, the movement of the vacuum piping 54 is restricted as much as possible due to the piping. In addition, 'the lighting system-side shielding mechanism 7 and the projection system-side shielding mechanism 8 are provided', thereby being able to shield from the outside air from the lighting unit & the lighting system system outer casing # 壳 102) to the projection unit PU (the lens barrel 109) The exposure uses the light path of light. And 'replace the space provided by the light path of the exposure light with a low-absorptive gas such as nitrogen or a rare gas, thereby warming the old ground > / In this case, the first absorption energy can be controlled to achieve high accuracy Exposure. Moreover, in this embodiment, a reflector for measuring the position of the reticle micro-movement section A Rr is provided outside the holding space of the reticle micro-movement stage 5. Irradiate the laser light from the laser 4 eye laser interferometer to measure the position of 36 200305065 reticle micro-movement stage, so there is no interferometer optical path in the gas replacement space, and it is not affected by the measurement error caused by the gas displacement accuracy change Therefore, the position control performance of the reticle stage can be improved, and the exposure accuracy can be improved.

又在本實施形態中，成為振動源之標線片載台RST 及晶圓載纟WST、和其他部份係分別另外支持，形成振動 幾乎不傳達給光學系統等之構成，故曝光精度受振動之影 響極力減低。 又’上述實施形態係形成開口來作為照日月纟統測盤2 及投影系統側I 3之光透過部’但不限於此，也可藉由透 明構件來構成盤全體，也可藉由透明構件來構成曝光用光 之透過部份。這種情形之透明構件也能和投影光學系統及 照明光學系統同樣地’能使用螢石和改良型石英。 扣又，在遮蔽機構7、8、22及標線片載台RST内之保持 :間SS之任一方中’未必需要設置氣體供應機構、氣體排 氣機構兩者，只要設置任一方即可。 又，上述實施形態，就差動排氣型之氣體靜壓軸承及 封裝機構所使用之氣體而言，雖採用氮氣或稀有氣體等低 :收性氣體’但不限於此，當藉由真空栗之排氣量較藉由 氣體供應裝置之供氣量多時，也可採用空氣等。 又，在上述實施形態中，就投影單元pu而言，雖假定 具備直筒型鏡筒之情形，但當投影光學系統為反射折射型 時:鏡筒會在途中彎曲，或產生突起。這種㈣，在鏡筒 之標線片側端面或晶圓側端面’西己置差動排氣型之氣封機 37 200305065 構，藉此，不必任何變動就能適用本發明。 、*又在上述實施形態中，係只用中間部46b來連結構 成‘線片粗動载台4之上板部46a和下板部46c之間，不 限於此，在標線片粗動載台4之γ側前方部（_γ側），進 步叹置連接上板部46a和中間部46b之支持柱，能更進 一步提兩其剛性。 又，在上述實施形態中，較佳係供應給各軸承之氣體 及供應給保持標線片之保持空間ss内等之氣體，其溫度= 控制在既定之溫度（例如，22。〇，且粒子和有機物、水蒸 氣等之異物充分加以排除。 又，上述實施形態，係針對各軸承具有供氣用環狀槽 和排氣用環狀槽之雙重構造之情形加以說明，但不限於此 ’即使將溝作成三重構造，從位於這些中間位置之槽，供 應氣體，從挾持該中間溝之二溝來吸引氣體，也能得到同 樣之氣密化效果。並且，當然也能採用四重構造（將上述 雙重構造形成雙重）之軸承。即，關於槽數，能在各軸承 任意選擇。 又，當把氮氣或稀有氣體之一部份供應到保持空間ss 内時，也可從照明系統侧遮蔽機構及投影系統側遮蔽機構 之至少一方，供應氮氣或稀有氣體之一部份，來取代供氣 支管221a、221b。又，也可與供氣支管221a、221b同時 ，使用照明系統側遮蔽機構及投影系統側遮蔽機構之至少 一方，將氮氣或稀有氣體供應到保持空間SS内。 又，上述實施形態係針對步進掃描方式之曝光裝置， 38 200305065 採用本發明之氣髏置換（gas purge)方法之情形加以說明， 但本發明不限於此，關於步進重複方式之曝光裝置（所謂 的投影器），也非常適用。 又’上述實施形態之曝光裝置光源，不限於ρ2雷射光 源、ArF準分子雷射光源、KrF準分子光源等，例如，用摻 斜（或辑和镱兩者）光纖放大器來放大DFB半導體雷射或從 光纖雷射振盪之紅外領域、或可視領域之單一波長雷射光 也可使用非線性光學結晶，使波長轉換為紫外光之高次In this embodiment, the reticle stage RST and the wafer stage WST, which serve as vibration sources, are separately supported, and other parts are formed, so that the vibration is hardly transmitted to the optical system. Therefore, the exposure accuracy is affected by the vibration. The impact is minimized. Also, the above-mentioned embodiment forms an opening to serve as a light transmitting portion of the sun-and-lunar system measurement disk 2 and the projection system side I 3 ', but is not limited to this, the entire disk may be formed by a transparent member, or may be transparent The component constitutes a transmitting portion of the exposure light. In this case, the transparent member can use fluorite and modified quartz in the same manner as the projection optical system and the illumination optical system. In addition, it is not necessary to install both a gas supply mechanism and a gas exhaust mechanism in any of the holding mechanisms 7, 8, 22, and the reticle stage RST ', as long as either one is provided. In the above embodiment, the gas used for the differential exhaust type gas static pressure bearing and the packaging mechanism is a low-recoverable gas such as nitrogen or a rare gas, but it is not limited to this. When the amount of exhaust gas is larger than that supplied by the gas supply device, air or the like may also be used. Also, in the above embodiment, the projection unit pu is assumed to have a straight-type lens barrel, but when the projection optical system is a reflection-refractive type: the lens tube may be bent or a protrusion may be generated on the way. In this way, a differential exhaust type air-sealing machine 37 200305065 is mounted on the reticle-side end face or wafer-side end face of the lens barrel, and the present invention can be applied without any change. In the above-mentioned embodiment, only the middle portion 46b is used to form a link between the upper plate portion 46a and the lower plate portion 46c of the wire coarse motion stage 4. It is not limited to this. The front part of the γ side of the stage 4 (_γ side), the support post connecting the upper plate part 46a and the middle part 46b can be further improved, which can further enhance its rigidity. In the above embodiment, it is preferable that the gas is supplied to each bearing and the gas in the holding space ss holding the reticle, and the temperature is controlled at a predetermined temperature (for example, 22.0), and the particles are And foreign matter such as organic matter, water vapor, etc. are sufficiently excluded. In addition, the above-mentioned embodiment describes a case where each bearing has a dual structure of an annular groove for gas supply and an annular groove for exhaust gas, but it is not limited to this. The trench is formed into a triple structure, and the gas is supplied from the grooves located at these intermediate positions, and the same gas-tightening effect can be obtained by holding the two grooves of the middle groove. Of course, a quadruple structure (the The above-mentioned double structure forms a double) bearing. That is, the number of slots can be arbitrarily selected in each bearing. Also, when a part of nitrogen or a rare gas is supplied into the holding space ss, the mechanism can be shielded from the lighting system side. And at least one side of the shielding system on the projection system side, supplying nitrogen or a part of the rare gas to replace the gas supply branch pipes 221a, 221b. Also, it can be connected with the gas supply branch pipes 221a, 2 21b At the same time, at least one of the lighting system-side shielding mechanism and the projection system-side shielding mechanism is used to supply nitrogen or a rare gas into the holding space SS. In addition, the above embodiment is directed to a step-and-scan type exposure device, 38 200305065. The case of the invention's gas purge method will be described, but the present invention is not limited to this, and the exposure device (so-called projector) of the step-and-repeat method is also very applicable. , Not limited to ρ2 laser light source, ArF excimer laser light source, KrF excimer light source, etc., for example, use oblique (or both) and erbium-doped fiber amplifiers to amplify DFB semiconductor lasers or oscillate infrared light from fiber lasers Laser light of a single wavelength in the field or the visible field can also use non-linear optical crystallization to convert the wavelength to a higher order of ultraviolet light

5皆波。又，投影單元之倍率也可只使用縮小系統，也可使 用等倍及放大系統之任一種。5 are waves. The magnification of the projection unit may be only a reduction system, or any of a magnification system and a magnification system.

又，將照明單元（由複數個透鏡所構成）、投影單元矣 裝在曝光裝置本體中，進行光學調整，並且，將由多數$ 拽械元件所構成之晶圓載台（掃描型之情形，也指標線少 f台）安裝在曝光裝置本體，連接配線及配管，組裝構i 標線片室、晶圓室之隔離壁，連接氣體配管系，對各控讳 系、，先進仃各部之連接，進一步進行綜合調整（電氣調整、 動作確認等），藉此，能製造上述實施形態之曝光裝置ι〇 :本發明之曝光裝置。又，較佳係曝光裝置在控制溫度石 潔淨度之潔淨室來進行製造。 又，本發明不僅適用於半導體元件之製造所使用之曝 光破置，而且也適用於顯示器（包含液晶顯示元件、電漿 顯不器' 等）之製造所使用之曝光裝置；把元件圖案轉印在 玻螭板上之曝光裝置；薄膜磁頭之製造所使用之曝光裝置 ’適用於將元件圖案轉印在陶瓷晶圓上之曝光裝置；攝影 39 200305065 疋件（CCD等）、微型機器、及])NA晶片等之製造所使用之 曝光裝置等。 (元件製造方法） 其次’針對在微影製程使用上述曝光裝置之元件製造 方去之實施形態，加以說明。 第6圖係表示元件（1C或LSI等半導體晶片、液晶面 板、CCD、薄膜磁頭、微型機器等）之製造例流程圖。如第 6圖所示，首先，在步驟3〇1(設計步驟）中，進行元件之功 能/性能設計（例如，半導體元件之電路設計等），進行用來 實現該功能之圖案設計。接下來，在步驟3〇2(光罩製作步 驟）中’製作形成所設計之電路圖案之光罩^ —方面， =步驟303(晶圓製造步驟）中，使用石夕晶等材料來製造晶 -在步驟3〇4(晶圓處理步驟）中，係使用步驟301 ;步=3所準備之光罩和晶圓，如後述，藉由微影技術 件,且^賢;V形成實際之電路等。其次，在匈3〇5(元 植裝：在::7驟係使用步驟304所處理之晶圓，進行元件 程(晶片密:)等製3: 5广切割製程、接合製程、及封裝製 日方在封）專製程係視需要而定。 隶後’在步驟3 〇 6 (檢查晶片）中， 作之元件之叙於〇 ^ ~片）中進行步驟305所製 動作確認試驗、耐久q ^ ^ 程後之元件便止4㈣广驗4撿查。經過這種製 千便π成，所製成之元件 第7圖係表示半導體元件中 出知。 程例。在第7 11+ *此 述步驟304之詳細流 中，在步驟311(氧化步驟)令，使晶圓之 200305065 表面氧化，在步驟312(CVD步 緣膜。在步驟_極形成步驟)中，：:表:：: :成在晶圓上。在步…(離子植入步驟);錢::= 圓上’植入離子。以上之各步驟3ιι〜步驟 成： 圓處理各階段之前處理工程，在各階段中，視必曰 ，選擇性地執行。 祝乂要之處理 在晶圓製程之各階段’若完成上述前處理製程的話， ,則如以下所述，執行後處理製程。在該後處理製程中 先，在步驟315(光阻形成步驟）中，在晶圓上 劑。接下來，在步驟316(曝光步驟)中，藉 二先 系統(曝光裝置)及曝光方法，將光罩之電路圖案 圓上。其次，在步驟317(顯像步驟)中，將曝光之晶圓加 以顯像，在步_ 3職刻步驟)中，藉由钮刻，除去光阻 殘存部分以外部分之露出構件。並且，在步驟319(光阻除 去步驟）中’將敍刻完成後不要之光阻除去。 重複進行這些前處理製程和後處理製程，藉此，在晶 圓上，多重形成電路圖案。 右使用以上所說明之本實施形態之元件製造方法的話 ，則在曝光製程（步驟316)t，因使用上述實施形態之曝 光裝置’故在不降低曝光精度之狀態下，在半導體工廠内 ’設置多數個小型化之曝光裝置’藉此能提高高積體度之 元件生產性。 如以上說明，若依本發明之曝光裝置的話，不僅不會 降低曝光精度，且能實現裝置小型化、輕量化之效果。 200305065 又，若依本發明之元件製造方法的話，則具有能提高 高積體度之元件生產性之效果。 【圖式簡單說明】 (一） 圖式部份 第1圖係概略表示本發明一實施形態之曝光裝置圖。 第2圖係表示省略一部分標線片載台及其附近之立體 圖。 第3圖係標線片載台之縱截面圖。 第4(A)圖係第3圖之a_ a線截面圖，第4(B)圖係第 鲁 3圖之B線截面圖。 第5(A)圖係表示第1遮蔽機構構成之縱載面圖，第 5(B)圖係表示第2遮蔽機構構成之縱截面圖。 第δ圖係用來說明本發明之元件製造方法之流程圖。 第7圖係表示第6圖步驟304實施例之流程圖。 (二） 元件代表符號 2照明系統側盤（第1光罩盤） 2a、3a開口部（光透過部） 鲁 3投影系統側盤（第2光罩盤） 4標線片粗動載台（粗動载台） 4a 、 4b 開口 5標線片微動載台（微動載台） 7a遮蔽構件（第1遮蔽構件） 仏遮蔽構件（第2遮蔽構件） 卜9。標線片雷射干涉計(雷射干涉計） 42 200305065 27、 31 供氣側環狀凹槽 28、 32 排氣側環狀凹槽 33、 58 供氣側環狀凹槽 34、 59 排氣側用凹槽 52 隔離壁（側壁） ~ 91a、91b 角隅稜鏡（反射面） 91c 平面鏡（反射面） 100 曝光裝置 EL曝光用光（照明光） ® ILU 照明單元 PU 投影單元 R 標線片（光罩） RST 標線片載台（光罩載台） SS 保持空間 W 晶圓（物體） 43In addition, an illumination unit (consisting of a plurality of lenses) and a projection unit are mounted in the exposure device body to perform optical adjustments, and a wafer stage (scanning type, which is composed of a large number of mechanical elements) is also used as an indicator. F-line units) are installed on the body of the exposure device, connecting wiring and piping, assembling the partition walls of the reticle chamber and wafer chamber, connecting the gas piping system, and connecting the various control systems and advanced units. By performing comprehensive adjustment (electrical adjustment, operation confirmation, etc.), the exposure apparatus of the above embodiment can be manufactured: the exposure apparatus of the present invention. The exposure device is preferably manufactured in a clean room that controls the cleanliness of the temperature stone. In addition, the present invention is not only applicable to the exposure device used in the manufacture of semiconductor elements, but also applicable to the exposure device used in the manufacture of displays (including liquid crystal display elements, plasma displays, etc.); the element pattern is transferred Exposure devices on glass panels; exposure devices used in the manufacture of thin-film magnetic heads' are suitable for exposure devices that transfer element patterns onto ceramic wafers; photography 39 200305065 parts (CCD, etc.), micromachines, and] ) Exposure equipment used in the manufacture of NA wafers, etc. (Element manufacturing method) Next, an embodiment of a component manufacturing method using the above exposure apparatus in a lithography process will be described. Fig. 6 is a flowchart showing a manufacturing example of a device (a semiconductor wafer such as 1C or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a microcomputer, etc.). As shown in FIG. 6, first, in step 301 (design step), the function / performance design of the device (for example, the circuit design of a semiconductor device, etc.) is performed, and a pattern design for realizing the function is performed. Next, in step 302 (mask production step), 'make a mask for forming the designed circuit pattern. ^ — In step 303 (wafer manufacturing step), use a material such as Shi Xijing to produce a crystal. -In step 304 (wafer processing step), the reticle and wafer prepared in step 301 are used in step 301; as described later, the lithography technique is used, and the actual circuit is formed by V Wait. Secondly, in Hungary 305 (Yuan Zhiji: in the step of :: 7, the wafer processed in step 304 is used to perform the component process (wafer density :), etc. 3: 5 wide cutting process, bonding process, and packaging system. The Japanese side is closing) The dictatorship process is determined as needed. In the following step, in step 3 (checking the wafer), the components made are described in step ^), and the operation confirmation test made in step 305 and the durability q ^ ^ will be stopped and the components will be inspected and checked. check. After this process, the device is completed. Fig. 7 shows a semiconductor device. Process example. In the detailed flow of the 7th 11 + * step 304 described above, in step 311 (oxidation step), the 200305065 surface of the wafer is oxidized, and in step 312 (CVD step edge film. In step_pole formation step), ：: 表 ::::: Finished on the wafer. In the step ... (ion implantation step); money :: = circle 'implanted ions. Each of the above steps from 3 to 1 steps is completed: The process is processed before each stage of the round processing, and in each stage, it is selectively executed as necessary. Zhu Xun's required processing At each stage of the wafer process, if the above pre-processing process is completed, the post-processing process is performed as described below. In this post-processing process, first, in step 315 (photoresist formation step), a wafer is applied. Next, in step 316 (exposure step), the circuit pattern of the photomask is rounded by the two-system (exposure device) and the exposure method. Next, in step 317 (imaging step), the exposed wafer is developed, and in step (3 step engraving step), the exposed members other than the remaining portion of the photoresist are removed by button engraving. In step 319 (photoresist removal step), the unnecessary photoresist is removed after the completion of the engraving. These pre-processing processes and post-processing processes are repeated, whereby a circuit pattern is formed on the wafer in multiples. If the device manufacturing method of this embodiment described above is used on the right, the exposure process (step 316) t, because the exposure device of the above embodiment is used 'is installed in a semiconductor factory without reducing the exposure accuracy' Many miniaturized exposure devices can improve the productivity of high-integration devices. As described above, according to the exposure device of the present invention, the effect of miniaturizing and reducing the weight of the device can be achieved without reducing the exposure accuracy. 200305065 In addition, according to the device manufacturing method of the present invention, it has the effect of improving the productivity of a device with a high degree of integration. [Brief description of the drawings] (I) Schematic part The first figure is a diagram schematically showing an exposure apparatus according to an embodiment of the present invention. Fig. 2 is a perspective view showing a portion of the reticle stage and its vicinity. Figure 3 is a longitudinal sectional view of a reticle stage. Figure 4 (A) is a sectional view taken along line a_a in Figure 3, and Figure 4 (B) is a sectional view taken along line B in Figure 3A. Fig. 5 (A) is a longitudinal sectional view showing the structure of the first shielding mechanism, and Fig. 5 (B) is a longitudinal sectional view showing the structure of the second shielding mechanism. Figure δ is a flowchart for explaining the method of manufacturing a device according to the present invention. Fig. 7 is a flowchart showing an embodiment of step 304 in Fig. 6; (2) Symbols for components 2 Side panel of the lighting system (the first photomask disc) 2a, 3a openings (light transmitting parts) Lu 3 side panel of the projection system (the second photomask disc) 4 Gravity coarse motion stage ( Coarse movement stage) 4a, 4b Open 5 reticle micro movement stage (micro movement stage) 7a shielding member (first shielding member) 仏 shielding member (second shielding member) bu 9. Reticle laser interferometer (laser interferometer) 42 200305065 27, 31 annular grooves on the supply side 28, 32 annular grooves on the exhaust side 33, 58 annular grooves on the gas supply side 34, 59 exhaust Side grooves 52 Partition wall (side wall) ~ 91a, 91b Corner (reflective surface) 91c Plane mirror (reflective surface) 100 Exposure device EL exposure light (illumination light) ® ILU lighting unit PU projection unit R reticle (Photomask) RST reticle stage (Photomask stage) SS Holding space W Wafer (object) 43

Claims (1)

200305065 拾、申請專利範圍： 1、一種曝光裝置，係具備： 照明單元，係藉由照明光來照明光罩； 投影單元，係將形成於該光罩之圖案投影在物體上； 光罩載台’在其内部形成可保持該光罩之保持空間， :與該照明光之光路大致垂直之移動面内，至少能二軸 方向移動； 干 第1光罩盤，係隔著既定之第i間隙配置在 台之照明單元側，局部設有該照明光可透過之光透過部載 且形成有與該光罩載台對向之對向面；及 第2光罩盤，係隔著既定之第2間隙配置在該光 台之該投影單元側，局部設㈣照明光可透過之光透過^ ，且形成有與該光罩載台對向之對向面。 2、 如申請專利範圍第1項之曝光裝置，其進一步具備 差動排氣型之f 1氣體靜壓軸承，係設置在該光罩載:， 對4第2光罩盤之對向面噴射既定氣體，且吸引該對向 附近工間内之氣體並往外部排氣，藉此來形成該第2間隙。 3、 如申請專利範圍第2項之曝光裝置，其進一步具傷 差動排亂型之帛2氣體靜壓軸承，係設置在該光單栽台， 對该第1光罩盤之對向面噴射既定氣體，且吸引該對向面 附近之该第1間隙内之氣體並往外部排氣。 4、 如申請專利範圍帛3項之曝光裝置，其中，該第工 、+第2氣體靜壓軸承之至少—方，係具有與該既定氣體之 噴射口連通之供氣側環狀凹槽、及配置在該供氣側環狀四 44 200305065 口連通之供氣側環狀凹 槽之外環側且與兮〜 兴4既疋氣體之排氣 槽0 其中5，、該如光:專:範圍第1〜4項中任一項之曝光裝置， ^ 载台係具有··微動載台， 載一移 -二微動載…一 ^ 差動1二申睛專利範圍第5項之曝光裝置，其進-步具備 差動排氣型之第1翕 、面 之今❿㈣壓軸承’係在與該微動載台對向 面二.°之對向面之中’設置在該投影單元側之對向 且㈣γΓ對向面對向之該微動載台之面噴射既定氣體， °違微動載台之面附近之氣體並往外部排氣。 7、广申請專利範圍第6項之曝光裝置，其進一步具備 差動排孔型之帛2氣體靜壓軸承，係在與該微動載台對向 之該粗動載台之對向面之中，設置在該照明單元側之對向 面’在與該對向面對向之該微動載台之面噴射既定氣體， 且吸引該微動載台和該粗動載台間之間隙内部之氣體並往 外部排氣。 8、 如申請專利範圍第7項之曝光裝置，其中，該第i 、第2氣體靜壓軸承之至少一方，具有與該既定氣體之噴 射口連通之供氣側環狀凹槽、及配置在該供氣側環狀凹槽 之外％側且與該既定氣體之排氣口連通之供氣側環狀凹槽。 9、 如申請專利範圍第5項之曝光裝置，其中，該微動 栽台係形成有該保持空間。 45 200305065 1 ο、如申請專利範圍第9項之曝光裝置，其中，該微 動載台係具備用來形成該保持空間之側壁； 且，該曝光裝置進-步具備雷射干涉計，係對設於該 側壁外面側的反射構件照射雷射光，根據在該反射構件之 反射面所反射之反射光，來測量該微動載台之位置。 11、 如申請專利範圍第5項之曝光裝置，其進一步具 備對該保持空間供應特定氣體之氣體供應機構、及將該保 持空間内之氣體排氣之氣體排氣機構之至少一方。 12、 如申請專利範圍第5項之曝光裝置，其進一步具 備： 遮蔽構件，係隔著既定之間隙配置成不接觸第丨光罩 盤和該照明單元之至少_ j，而A致遮蔽該帛1光罩盤和 該照明單元間之空間·，及 差動排氣型之密封機構，係設置在該遮蔽構件，對該 第1光罩盤和該照明單元之至少一方噴射既定之氣體，且 吸引5亥間隙内之氣體並往外部排氣。 13、 如申請專利範圍第ι2項之曝光裝置，其進一步具 備：對該遮蔽構件内部之形成照明光光路之光路空間供應 特疋氣體之氣體供應機構、及將該光路空間内之氣體排氣 之排氣機構之至少一方。 14、 如申請專利範圍第5項之曝光裝置，其進一步具 備： 遮蔽構件，係隔著既定之間隙配置成不接觸該第2光 罩盤和.亥照明單元之至少一方，而大致遮蔽該帛2光罩盤 46 200305065 和該照明單元間之空間；以及 差動排氣型之密封機構，係設置 第2光罩盤和該投影單元之至少一方，喷:::件，對該 且吸引該間隙内之氣體並往外部排氣。 &之氣體’ 15、如申請專利範圍第14項之曝光 備：對該遮蔽構件内部之形成照明光光路之/、進一步具 特定氣體之氣體供應機構、及將該光路:路空間供應 之排氣機構之至少一方。 之氣體排氣200305065 Patent application scope: 1. An exposure device comprising: an illuminating unit that illuminates a photomask with illumination light; a projection unit that projects a pattern formed on the photomask onto an object; a photomask stage 'A holding space capable of holding the photomask is formed in the inside: at least in a two-axis direction in a moving surface that is substantially perpendicular to the light path of the illumination light; the first photomask disc is dried through a predetermined i-th gap It is arranged on the side of the lighting unit of the stage, and a light transmitting part through which the illuminating light can be transmitted is partially provided and an opposite surface opposite to the mask stage is formed; and a second mask disc is provided through the predetermined first stage. 2 gaps are arranged on the projection unit side of the optical stage, and the light transmitted by the illuminating light is partially transmitted ^, and an opposing surface opposite to the mask stage is formed. 2. For example, the exposure device of the scope of application for patent No. 1 further includes a differential exhaust type f 1 gas static pressure bearing, which is arranged on the photomask: and sprays on the opposite side of the 4th photomask disc. The second gap is formed by attracting the predetermined gas and exhausting the gas in the nearby workshop to the outside. 3. For example, the exposure device of the second scope of the application for patent, which further has a 伤 2 gas static pressure bearing of the differential displacement type, is arranged on the light single planting platform, and is opposite to the first photomask plate. The predetermined gas is injected, and the gas in the first gap near the facing surface is attracted and exhausted to the outside. 4. For the exposure device in the scope of item 3 of the application for patent, at least one of the first and second gas static pressure bearings has an annular groove on the gas supply side communicating with the injection port of the predetermined gas, And the gas-supply-side annular groove 44 200305065 port is connected to the gas-supply-side annular groove on the outer side of the gas-supply-side annular groove and is connected to the Xi ~ Xing 4 gas, 0 of which 5, such as light: special: The exposure device of any of the items 1 to 4 of the scope, ^ The stage is provided with a micro-moving stage, carrying a shift-two micro-moving carriers ... a ^ differential 12 two-eye exposure range of the patent scope, Its step-by-step is equipped with a differential exhaust type No.1 and No.2 pressure bearing 'is placed in the opposite side of the micro-moving stage. The opposite side is provided on the side of the projection unit. The predetermined gas is sprayed toward the opposite surface of the micro-moving stage opposite to ㈣γΓ, and the gas near the surface of the micro-moving stage is violated and exhausted to the outside. 7. The exposure device according to item 6 of the widely-applied patent scope further includes a 排 2 gas static pressure bearing of a differential row type, which is located on the opposite side of the coarse movement stage opposite to the micro movement stage. The opposite side provided on the side of the lighting unit 'sprays a predetermined gas on the side of the micro-moving stage facing the opposite side, and attracts the gas in the gap between the micro-moving stage and the coarse-moving stage and Vent to the outside. 8. If the exposure device according to item 7 of the scope of patent application, at least one of the i-th and the second gas-static pressure bearing has a gas-supply-side annular groove communicating with the predetermined gas injection port, and is arranged in the An air-supply-side annular groove outside the gas-supply-side annular groove and communicating with an exhaust port of the predetermined gas. 9. The exposure device according to item 5 of the scope of patent application, wherein the holding space is formed in the micro-moving planting platform. 45 200305065 1 ο The exposure device according to item 9 of the scope of patent application, wherein the micro-motion stage is provided with a side wall for forming the holding space; and the exposure device is further equipped with a laser interferometer, The reflecting member on the outer side of the side wall is irradiated with laser light, and the position of the micro-motion stage is measured based on the reflected light reflected on the reflecting surface of the reflecting member. 11. If the exposure device according to item 5 of the patent application scope further includes at least one of a gas supply mechanism that supplies a specific gas to the holding space, and a gas exhaust mechanism that exhausts the gas in the holding space. 12. If the exposure device of the scope of application for patent No. 5 further includes: a shielding member, which is arranged so as not to contact at least _j of the mask plate and the lighting unit through a predetermined gap, and A causes the shielding 1 The space between the mask plate and the lighting unit, and a differential exhaust type sealing mechanism are provided in the shielding member, and a predetermined gas is sprayed onto at least one of the first mask plate and the lighting unit, and Attracts the gas in the gap and exhausts it to the outside. 13. If the exposure device according to item 2 of the patent application scope, it further includes: a gas supply mechanism for supplying special gas to the light path space forming the illumination light path inside the shielding member, and a gas exhaust mechanism for exhausting the gas in the light path space. At least one of the exhaust mechanisms. 14. If the exposure device according to item 5 of the patent application scope, further includes: a shielding member, which is arranged so as not to contact at least one of the second photomask disk and the .HI lighting unit through a predetermined gap, and substantially shields the frame; 2 reticle plate 46 200305065 and the lighting unit; and a differential exhaust type sealing mechanism, which is provided with at least one of the second reticle plate and the projection unit, sprays ::: pieces, and attracts the The gas in the gap is exhausted to the outside. & Gas' 15, such as the exposure preparation for the scope of application for patent No. 14: the formation of the light path of the illuminating light inside the shielding member /, a gas supply mechanism further with a specific gas, and the row of light path: road space supply At least one of the gas institutions. Gas exhaust 16、 如申請專利範圍第1〇項之曝光裝 明光係波I 19Gnm以下之真空紫外光， :中:該照 及稀有氣體兩者之任一種。 、疋氣體係氮氣 17、 如申請專利範圍第13項之曝光 明光係…—之真空紫外光，該特置定== 及稀有氣體兩者之任一種。 弋風•體係氮軋 18、如申請專利範圍第15項之曝光裝置， 明光係波長1 90nm以下之真空紫外光 及稀有氣體兩者之任一種。16. For example, the exposure device of the scope of application for patent No. 10, the clear ultraviolet light I 19Gnm or less, vacuum ultraviolet light: middle: either the photo or the rare gas. 3. Nitrogen gas system 17. If the exposure range of the patent application No. 13 is exposed, the bright light system is vacuum ultraviolet light, the special setting == and either of the rare gas. Howling • Nitrogen rolling of the system 18. If the exposure device under the scope of patent application No. 15 is used, the bright light is any one of vacuum ultraviolet light with a wavelength below 1 90nm and a rare gas. 其中，該照 氣體係氮氣Among them, the irradiation system nitrogen :係含有微影製 2員之曝光裝置來 19、-㈣件製造方法，丨特徵在於 程，§亥4 β製程係使用申請專利範圍第5 進行曝光。 拾壹、圖式： 如次頁 47: It is an exposure device that contains two members of the lithography system. 19,-The manufacturing method of the article, which is characterized by the process, and the § Hai 4 beta process is used for the exposure in the scope of patent application No. 5. Pick up, schema: as next page 47