JPS60133728A - Far ultraviolet ray projecting exposure device - Google Patents

Far ultraviolet ray projecting exposure device

Info

Publication number
JPS60133728A
JPS60133728A JP58241440A JP24144083A JPS60133728A JP S60133728 A JPS60133728 A JP S60133728A JP 58241440 A JP58241440 A JP 58241440A JP 24144083 A JP24144083 A JP 24144083A JP S60133728 A JPS60133728 A JP S60133728A
Authority
JP
Japan
Prior art keywords
far ultraviolet
ultraviolet rays
nitrogen gas
rays
ultraviolet ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58241440A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP58241440A priority Critical patent/JPS60133728A/en
Publication of JPS60133728A publication Critical patent/JPS60133728A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To perform the projecting exposure by sufficient light amount without absorption of far ultraviolet rays by filling the far ultraviolet ray passage of a far ultraviolet ray projecting exposure device with nitrogen gas or argon gas. CONSTITUTION:Far ultraviolet rays from a light source 1 become parallel rays by a reflecting mirror 2, and contracted and projected through a mask 3, a prism 4 and a reflecting lens 5 on the surface of an Si wafer 6 on a stage as an image of the mask 3. Nitrogen gas is filled from a nozzle 10 in a barrel 7, the nitrogen gas is eventually filled in a ray passage 11 of the far ultraviolet rays to prevent the rays from being absorbed.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は遠紫外線による投影露光装置に関する〔従来技
術〕 従来、遠紫外線及び紫外線投影霧光装置に於ては、被露
光物表面のホト・レジストの酸化を防ぐ目的で被露光物
表面を窒素ガスで晒す方法、装置は用いられていた。[Detailed Description of the Invention] [Technical Field] The present invention relates to a projection exposure apparatus using far ultraviolet rays [Prior Art] Conventionally, in far ultraviolet and ultraviolet projection exposure apparatuses, oxidation of photoresist on the surface of the exposed object In order to prevent this, methods and equipment have been used to expose the surface of the exposed object with nitrogen gas.

しかし、上記従来技術によると遠紫外線が光路１− 中の酸素により吸収され、露光量が不足するという欠点
があった。However, the conventional technique described above has the drawback that the far ultraviolet rays are absorbed by oxygen in the optical path 1-, resulting in insufficient exposure.

〔目的〕〔the purpose〕

本発明はかかる従来技術の欠点をなくシ、遠紫外線の投
影露光装置の光路において、遠紫外線の吸収のない遠紫
外線投影露光装置を提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to eliminate the drawbacks of the prior art and to provide a far ultraviolet projection exposure apparatus in which far ultraviolet rays are not absorbed in the optical path of the far ultraviolet projection exposure apparatus.

〔概要〕〔overview〕

上記目的を達成する為の本発明の基本的な構成は、遠紫
外線投影露光装置に於て、波長８０００Ａ以下、１００
ＯＡ程度迄の遠紫外線を用いてマスク像を被露光物表面
に結像露光する遠紫外線投影露光装置に関し、遠紫外線
の光路は窒素ガスまたはアルゴン・ガスを満たして成る
ことを特徴とする。The basic structure of the present invention to achieve the above object is to provide a deep ultraviolet projection exposure apparatus with a wavelength of 8000 A or less, a 100
The present invention relates to a deep ultraviolet projection exposure apparatus that forms and exposes a mask image on the surface of an object to be exposed using far ultraviolet rays up to OA level, and is characterized in that the optical path of the far ultraviolet rays is filled with nitrogen gas or argon gas.

〔実施例〕〔Example〕

以下、実施例によル本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.

第１図は本発明の実施例を示す模式図であり、エキシマ
争レーザーあるい＃′ｉＸ　ｇ　−Ｈｇランプからなる
光源ｌからの遠紫外線は反射鏡２等によル２− 平行光と々す、マスク８を通して、プリズム４゜反射レ
ンズ５尋を通してステージ上のＳ（ウェーハ６０表面に
マスク８の像を縮少投影され、Ｓ（ウェーハ６はその表
面にホト・レジストが塗布されて成）、ステージによフ
ステップ・アンド・リピート動作により露光されて成る
場合に、鏡筒７内はノズル８　、９　、１１３からの窒
素ガスにより満たされて成９、且つｓ４ウェーハ６の表
面は絶えず鏡筒内が窒素ガスが僅かに大気圧より陽圧に
することによ）窒素ガスに晒されて成り、結局遠紫外線
の光路１１に紘窒素ガスで満たされて成ることとなる。FIG. 1 is a schematic diagram showing an embodiment of the present invention, in which deep ultraviolet rays from a light source 1 consisting of an excimer laser or #'iX g-Hg lamp are reflected by a reflecting mirror 2, etc. Through the mask 8, the image of the mask 8 is projected onto the surface of the S (wafer 60) on the stage through a prism 4° reflective lens of 5 fathoms, , the inside of the lens barrel 7 is filled with nitrogen gas from the nozzles 8, 9, and 113, and the surface of the S4 wafer 6 is constantly exposed to the lens barrel. The inside of the tube is exposed to nitrogen gas (by making the pressure slightly more positive than atmospheric pressure), and as a result, the optical path 11 of the far ultraviolet rays is filled with nitrogen gas.

〔効果〕〔effect〕

本発明の如く、遠紫外線投影無光装置の遠紫外線光路が
不活性ガスで満たされることにより、酸素ガスによる遠
紫外線の吸収もなく充分な光量により投影露光が可能と
なる効果があると共に、ホト・レジストの露光時酸化に
よるレジスト膜減少という問題もなくなる効果がある。As in the present invention, by filling the far ultraviolet light path of the far ultraviolet lightless projection device with an inert gas, there is an effect that projection exposure is possible with a sufficient amount of light without absorption of far ultraviolet rays by oxygen gas. - This has the effect of eliminating the problem of resist film reduction due to oxidation during resist exposure.

８−8-

【図面の簡単な説明】 第１図は本発明の実施例を示す遠紫外線投影露光装置の
模式図である。 １拳・遠紫外線光源　２−・反射篩 ８０．マスク　４００反射鏡 ５Ｉ・反射レンズ　６・・被露光物 ７・＠鏡筒　８　、９　、　ｌ１ｌ−ゆノズル以　上 出願人　株式会社諏訪精工舎 代理人　弁理士最　上　務 ４−BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram of a deep ultraviolet projection exposure apparatus showing an embodiment of the present invention. 1. Deep ultraviolet light source 2. Reflection sieve 80. Mask 400 Reflector 5I/Reflector lens 6...Exposed object 7/@ Lens tube 8, 9, 11l-Yu nozzle and above Applicant Suwa Seikosha Co., Ltd. Agent Patent Attorney Mogami 4-

Claims (1)

【特許請求の範囲】[Claims] 波長８０００Ａ以下１０００Ａ程度迄の遠紫外線を用い
てマスク像を被無光物表面に結１露光する遠紫外線投影
露光装置に関し、遠紫外線の光路は窒素ガスまたはアル
ゴンガスを満たして成ることを特徴とする遠紫外線投影
露光装［。A far ultraviolet projection exposure apparatus that uses far ultraviolet rays with a wavelength of 8000 A or less and up to about 1000 A to form a mask image on the surface of an object to be exposed, characterized in that the optical path of the far ultraviolet rays is filled with nitrogen gas or argon gas. A deep ultraviolet projection exposure system [.
JP58241440A 1983-12-21 1983-12-21 Far ultraviolet ray projecting exposure device Pending JPS60133728A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58241440A JPS60133728A (en) 1983-12-21 1983-12-21 Far ultraviolet ray projecting exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58241440A JPS60133728A (en) 1983-12-21 1983-12-21 Far ultraviolet ray projecting exposure device

Publications (1)

Publication Number Publication Date
JPS60133728A true JPS60133728A (en) 1985-07-16

Family

ID=17074334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58241440A Pending JPS60133728A (en) 1983-12-21 1983-12-21 Far ultraviolet ray projecting exposure device

Country Status (1)

Country Link
JP (1) JPS60133728A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6249624A (en) * 1985-08-29 1987-03-04 Nippon Kogaku Kk <Nikon> Projection type exposure device
JPS6298730A (en) * 1985-10-25 1987-05-08 Toshiba Corp Ultraviolet ray irradiator
JPH0269955A (en) * 1988-09-06 1990-03-08 Canon Inc Mask cassette loading mechanism
JPH0855792A (en) * 1995-07-17 1996-02-27 Canon Inc Element formation method
WO2003054936A1 (en) * 2001-12-21 2003-07-03 Nikon Corporation Gas purging method and exposure system, and device production method
US6970228B1 (en) 1999-07-16 2005-11-29 Nikon Corporation Exposure method and system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5371570A (en) * 1976-12-08 1978-06-26 Sony Corp Exposure device
JPS5454579A (en) * 1977-10-11 1979-04-28 Toshiba Corp Exposure method
JPS5810826A (en) * 1981-07-10 1983-01-21 Nippon Telegr & Teleph Corp <Ntt> Forming method for pattern

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5371570A (en) * 1976-12-08 1978-06-26 Sony Corp Exposure device
JPS5454579A (en) * 1977-10-11 1979-04-28 Toshiba Corp Exposure method
JPS5810826A (en) * 1981-07-10 1983-01-21 Nippon Telegr & Teleph Corp <Ntt> Forming method for pattern

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6249624A (en) * 1985-08-29 1987-03-04 Nippon Kogaku Kk <Nikon> Projection type exposure device
JPS6298730A (en) * 1985-10-25 1987-05-08 Toshiba Corp Ultraviolet ray irradiator
JPH0269955A (en) * 1988-09-06 1990-03-08 Canon Inc Mask cassette loading mechanism
JPH0855792A (en) * 1995-07-17 1996-02-27 Canon Inc Element formation method
US6970228B1 (en) 1999-07-16 2005-11-29 Nikon Corporation Exposure method and system
WO2003054936A1 (en) * 2001-12-21 2003-07-03 Nikon Corporation Gas purging method and exposure system, and device production method

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