TW200305187A - Fed cathode structure using electrophoretic deposition and method of fabrication - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000001652 electrophoretic deposition Methods 0.000 title abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 59
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000000725 suspension Substances 0.000 claims abstract description 29
- 239000011230 binding agent Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 25
- 238000000151 deposition Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 27
- 239000000853 adhesive Substances 0.000 claims description 19
- 230000001070 adhesive effect Effects 0.000 claims description 19
- 239000010410 layer Substances 0.000 claims description 17
- 239000012790 adhesive layer Substances 0.000 claims description 14
- 239000011777 magnesium Substances 0.000 claims description 12
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910021392 nanocarbon Inorganic materials 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- 150000003839 salts Chemical class 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000002270 dispersing agent Substances 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000002775 capsule Substances 0.000 claims 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims 1
- 239000000347 magnesium hydroxide Substances 0.000 claims 1
- 239000002071 nanotube Substances 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- 239000002041 carbon nanotube Substances 0.000 abstract description 30
- 229910021393 carbon nanotube Inorganic materials 0.000 abstract description 29
- 239000002245 particle Substances 0.000 abstract description 26
- 230000008021 deposition Effects 0.000 abstract description 10
- 238000000576 coating method Methods 0.000 abstract description 9
- 239000011248 coating agent Substances 0.000 abstract description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 26
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 8
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 description 6
- 229910002651 NO3 Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical group 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- -1 nitrate ions Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D13/00—Electrophoretic coating characterised by the process
- C25D13/02—Electrophoretic coating characterised by the process with inorganic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Abstract
Description
0) 0) 200305187 玟、發明說明 (¾月4月應㈣.發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明) 技術領撼. 本發明關於場發射顯示器裝置，及更特別地關於一種新 場發射陰極結構及形成該場發射陰極結構以用在一場發射 顯示器裝置的方法。 先前技術 場發射裝置（FEDs)習知在本技藝。該先前技藝裝置利用 各種不同方法建構，所有方法產生具有從一射極電極發射 電子的目的之結構。FEDs典型地包括一陽極，一陰極，及 碟佈置在對應個別晝素的位置間。操作期間，由陰極發射 的電子受到產生在陽極與陰極間的電場加速及撞擊到磷上 ，因此激發磷發光，及因而顯示一影像。 先前技#習知使用奈来碳管（CNT)沉積形成陰極結構。典 型地，在陰極製造期間，一黏結劑材料及CNT顆粒同時沉 積。一種沉積的方法是混合CNT_與黏結劑成為膠聚及 沉積該M。在電泳沉積（EPD)中需要黏結劑黏著⑶丁顆粒 至基板上。如說明’通常’黏結劑沉積與顆粒沉積同時實 施。然而，-穩定膠質懸浮液，其為均勾薄膜所需要，總 是無法在相同溶液中以黏結劑材料與粉末一起獲得。黏^ 劑材料，或黏結劑鹽類，強制一正電荷在懸浮的顆粒上。 在CNT顆粒的情形，其導致—失效的懸浮液，具有⑶丁顆 粒叢聚在一起。從該溶液的EPD導致高度地非均勻沉積而 具有高密度團聚存在薄膜表面上。非均勻Epi)塗層導致場 發射電流空間分佈的不均勻性及導致陰極中的缺陷。野 2003051870) 0) 200305187 发明, description of the invention (April-April should be ㈣. The technical field to which the invention belongs, the prior art, the content, the embodiments and the simple description of the drawings) technical leadership. The present invention relates to field emission display devices, and more In particular, it relates to a new field emission cathode structure and a method of forming the field emission cathode structure for use in a field emission display device. Prior art Field emission devices (FEDs) are known in the art. This prior art device is constructed using a variety of methods, all of which produce a structure with the purpose of emitting electrons from an emitter electrode. FEDs typically include an anode, a cathode, and a dish arranged between positions corresponding to individual day elements. During operation, the electrons emitted by the cathode are accelerated by an electric field generated between the anode and the cathode and impinge on the phosphor, thereby exciting the phosphor to emit light, and thus displaying an image. It is known in the prior art to use a carbon nanotube (CNT) deposition to form a cathode structure. Typically, during the fabrication of the cathode, a binder material and CNT particles are deposited simultaneously. One method of deposition is to mix CNT_ with a binder to form agglomerates and deposit the M. In the electrophoretic deposition (EPD), a binder is required to adhere the CD particles to the substrate. As stated, 'usually' binder deposition is performed simultaneously with particle deposition. However, a -stabilizing colloidal suspension, which is required for a homogeneous film, cannot always be obtained with a binder material together with a powder in the same solution. Adhesive materials, or binder salts, force a positive charge on the suspended particles. In the case of CNT particles, which results in a -failed suspension, the clusters of CU particles are clustered together. EPD from this solution results in highly non-uniform deposition with a high density of agglomerations present on the film surface. Non-uniform Epi) coatings cause non-uniformity in the spatial distribution of field emission currents and defects in the cathode. Wild 200305187
據此，有需要改進陰極結構及使用將導致一均勻EPD塗 層的電泳沉積技術以製造該陰極結構的方法。 本發明一目的是提供一 FED陰極及使用電泳沉積奈米碳 管製造一FED陰極的方法。 本發明另一目的是提供一FED陰極及製造一fed陰極的 方法其中達到一均勻的EpD塗層。 本發明再另一目的是提供一 EPD塗層其不需要後沉積活 化以得到一高密度發射位置。 發明内容 上面問題及其他者至少部份被解決以及上面目的與其他 者被貫現在一 FED陰極結構中以及使用電泳沉積奈米碳管 製造一 FED陰極結構之方法中在奈米碳管顆粒沉積之前實 施/儿積一黏結劑材料在一基板上的個別步驟。在EpD中需 要黏結劑黏著顆粒至基板上。首先，當基板在一溶液如 Mg(N〇3)2/IPA中被沉積時，一黏結劑層形成在一基板上。 5玄具有黏結劑材料形成在其上的基板接著被轉移至一奈米 碳管（CNT)懸浮液槽允許CNT顆粒披覆在黏結劑層上。熱處 理黏結劑層及CNT顆粒塗層轉變Mg(OH)2成為MgO。在一特 別具體實施例中形成許多微島狀結構。該Mg〇因其不是良 導體而用做均勾發射的穩重層。並且，熱處理使CNT顆粒 内埋至黏結劑材料中。後沉積活化如機械研磨是不需要的 ，存在的MgO黏結劑經熱處理分離成微島嶼，及CNT從島 嶼邊緣突出以得到一高密度的發射位置。 實施方式 200305187 本發明描述-種場發射陰極結構及從_懸浮液使用顆粒 的電泳沉積（EPD)製造該場發射陰極結構的新方法。一種特 別適合奈米碳管（CNT)沉積的製程用做一實施例。製造該陰 極結構的新方法包括分隔黏結劑沉積做為一個別步~驟:二 奈米碳管顆粒沉積之前實施。在EpD中需要黏結劑黏著奈 米碳管顆粒至基板上。先前技藝提供黏結劑與顆粒同時二 積。如前所述，一穩定的膠質懸浮液，其為均句薄膜所需 要，總是無法在相同溶液中以黏結劑材料與粉末一起獲得 。其以CNT在陽離子存在的懸浮液中的情形為實施例。例 如，CN 丁在異丙醇(岡中可以形成一穩定的懸浮液。然而 ，假如加入一黏結劑成份如Mg(N〇3)2，懸浮液即不穩定導 致凝聚。從該懸浮液EPD導致不均勻沉積具有高密度團聚 存在薄膜表面。文中說明的是準備一均勻塗層的方法盆包 括從一個別的溶液（Mg(N〇3)2/IPA)預沉積一黏結劑層，接著 轉移該基板進人-具有CNT懸浮液的液槽其不含黏結劑而 不允許黏結劑層乾掉。最後，CNT顆粒披覆到基板上。熱 處理該塗層轉變Mg(〇H)2成為Mg〇其基本上黏著CN丁顆粒 至基板上。所得的陰極結構提供不需後沉積活化的結構， 即如需要機械研磨才能得到一高密度的發射位置是不需的 。化是因為Mg0黏結劑經熱處理分離成微島嶼與CN丁從島 :邊緣犬出以及做為一穩定層。應該瞭解本揭露期望的是 ^ ^ Ί、、σ劑層不形成微島峡而成一均勻的層。 日^在轉到附圖，圖i _5以簡化的橫截面圖示說明根據本發 明製造一場發射陰極結構的方法的步驟。並且，說明在圖5 200305187Accordingly, there is a need to improve the cathode structure and a method for manufacturing the cathode structure using an electrophoretic deposition technique that will result in a uniform EPD coating. An object of the present invention is to provide a FED cathode and a method for manufacturing a FED cathode using electrophoretic deposited carbon nanotubes. Another object of the present invention is to provide a FED cathode and a method for manufacturing a fed cathode in which a uniform EpD coating is achieved. Yet another object of the present invention is to provide an EPD coating which does not require post-deposition activation to obtain a high-density emission site. SUMMARY OF THE INVENTION The above problem and others are at least partially solved and the above objects and others are implemented in a FED cathode structure and in a method for manufacturing a FED cathode structure using electrophoretic deposition of carbon nanotubes before the deposition of the carbon nanotube particles Individual steps of implementing / accumulating an adhesive material on a substrate. In EpD, an adhesive is required to adhere the particles to the substrate. First, when a substrate is deposited in a solution such as Mg (NO3) 2 / IPA, an adhesive layer is formed on a substrate. The substrate with the binder material formed thereon was then transferred to a one-nanometer carbon tube (CNT) suspension tank to allow the CNT particles to cover the binder layer. The heat treated adhesive layer and CNT particle coating transform Mg (OH) 2 into MgO. Many micro-island structures are formed in a particular embodiment. This Mg0 is used as a stable layer for uniform emission because it is not a good conductor. Further, the heat treatment causes the CNT particles to be embedded in the binder material. Post-deposition activation such as mechanical grinding is not required. The existing MgO binder is separated into micro islands by heat treatment, and CNTs protrude from the edge of the island to obtain a high-density emission site. Embodiment 200305187 The present invention describes a field emission cathode structure and a new method for manufacturing the field emission cathode structure using electrophoretic deposition (EPD) of particles from a suspension. A process particularly suitable for the deposition of carbon nanotubes (CNTs) is used as an embodiment. The new method of manufacturing the cathode structure includes separating the adhesive deposits as an additional step ~ implementation before the carbon nanotube particles are deposited. In EpD, an adhesive is required to adhere the carbon nanotube particles to the substrate. Prior art provided simultaneous bonding of the binder and the particles. As mentioned earlier, a stable colloidal suspension, which is required for uniform film, cannot always be obtained with a binder material and powder in the same solution. This is exemplified by the case of CNTs in a suspension in which cations are present. For example, CN butane can form a stable suspension in isopropanol. However, if a binder component such as Mg (N03) 2 is added, the suspension is unstable and causes aggregation. EPD from this suspension causes Heterogeneous deposition with high-density agglomeration exists on the surface of the film. The article illustrates that a method for preparing a uniform coating includes pre-depositing a layer of adhesive from another solution (Mg (NO3) 2 / IPA), and then transferring Substrate entry-the liquid tank with CNT suspension does not contain adhesive and does not allow the adhesive layer to dry off. Finally, CNT particles are coated on the substrate. Heat treatment of this coating transforms Mg (〇H) 2 into Mg〇. Its basic CN butadiene particles are adhered to the substrate. The resulting cathode structure provides a structure that does not require post-deposition activation, that is, if mechanical grinding is required to obtain a high-density emission site, it is unnecessary. The Mg0 binder is separated into Micro islands and CN Ding Cong islands: edge out and as a stable layer. It should be understood that the disclosure expects that the ^, Ί, and σ agent layers do not form a micro island gorge and form a uniform layer. Figure i_5 with simplified cross section The plan view illustrates the steps of a method of manufacturing a field emission cathode structure according to the present invention, and is illustrated in FIG. 5 200305187.
的是根據本發明方法製造的完全場發射陰極結構。現在參 考圖1 ’簡化的橫截面圖示說明的是本發明製造場發射陰極 、’、。構的製％之第一步驟。提供的是一電鍍槽1 〇，或懸浮液 槽其中已含有一黏結劑溶液12，由一溶劑14及具有一溶 貝瓜類16配置在其中所組成。揭露在較佳具體實施例的溶 劑14是醇類，水，甘油，或醇類及/或水及/或甘油的組合。 期望使用的醇類包括乙醇，甲醇，異丙醇（IPA)，或相似者 。溶質鹽類16分散在溶劑14内及由一金屬硝酸鹽，如鋁或 鎂硝酸鹽，硫酸鹽，或相似者所組成。在一較佳具體實施 例，溶質鹽類16由硝酸鎂顆粒（Mg^sjO3)2)組成。溶質鹽類 16提供的濃度在1><1〇.2至1χ1〇-4Μ等級。製造期間硝酸鎂分 解成鎮離子及硝酸根離子（目前討論）。 接著，提供一基板18 ,具有一表面2〇。揭露在較佳具體 貝加例的基板1 8由任何標準的基板材料，如玻璃，塑膠， 或陶瓷所形成及具有許多金屬電極22形成圖紋在表面20上 。揭露的金屬電極22由任何適合的導體金屬，如銅（Cu)， 鉬（Mo)，鉑（Pt)，氧化銦錫（1丁〇)，或相似者所形成。 本發明的陰極結構製造期間，基板18是浸在溶液12中。 一電壓，或偏壓，28以電源23施加到基板18，因此提供溶 質顆粒16移動向表面20，更特別地移向基板18的金屬電極 22。如說明，為了完成該溶質顆粒16移動向金屬電極， 一反向電極，更特別地是一輔助電極25，浸入溶液丨2中。 在该特別具體實施例中輔助電極25形成一個別的電極，但應 遠瞭解其可以形成做為閘極電極在陰極表面上。輔助電極25 (5) (5)200305187What is a full field emission cathode structure made according to the method of the present invention. Referring now to FIG. 1 ', a simplified cross-section diagram illustrates the fabrication of a field emission cathode of the present invention. The first step of the system. Provided is an electroplating tank 10, or a suspension tank which already contains a binder solution 12, which is composed of a solvent 14 and a soluble shellfish 16 disposed therein. The solvent 14 disclosed in the preferred embodiment is an alcohol, water, glycerol, or a combination of alcohol and / or water and / or glycerol. Desirable alcohols include ethanol, methanol, isopropyl alcohol (IPA), or the like. The solute salts 16 are dispersed in the solvent 14 and consist of a metal nitrate, such as aluminum or magnesium nitrate, sulfate, or the like. In a preferred embodiment, the solute salt 16 is composed of magnesium nitrate particles (Mg ^ sjO3) 2). The solute salt 16 provides a concentration on the order of 1 > < 10.2 to 1x10-4M. Magnesium nitrate is decomposed into ballast and nitrate ions during manufacture (currently discussed). Next, a substrate 18 is provided with a surface 20. The substrate 18 disclosed in the preferred embodiment is formed of any standard substrate material, such as glass, plastic, or ceramic, and has a plurality of metal electrodes 22 patterned on the surface 20. The disclosed metal electrode 22 is formed of any suitable conductive metal, such as copper (Cu), molybdenum (Mo), platinum (Pt), indium tin oxide (1but 0), or the like. During manufacture of the cathode structure of the present invention, the substrate 18 is immersed in the solution 12. A voltage, or bias, 28 is applied to the substrate 18 with a power source 23, thus providing metal particles 22 for the solute particles 16 to move toward the surface 20, and more particularly toward the substrate 18. As illustrated, in order to complete the movement of the solute particles 16 to the metal electrode, a counter electrode, more particularly an auxiliary electrode 25, is immersed in the solution 2. In this particular embodiment, the auxiliary electrode 25 forms another electrode, but it should be understood that it can be formed on the cathode surface as a gate electrode. Auxiliary electrode 25 (5) (5) 200305187
與電極22相隔範圍近似！ _至5 cm，及較佳地近似i⑽。輔 助電極25提供一增進的場強度及一均勻的電場。在一較 佳具體實㈣+ ’ - A電壓28範圍卜耻特施加到基板 18的時間間隔在U分鐘的範圍’依據結果層所需的厚度 而定（目前討論的）。更特別地，在該特別具體實施例中， 一負電壓-5謂加到基板18的時間“分鐘之電流〇25安 培。結I，帶正電荷的解離確酸鎂顆粒，黏著到電極22 ，因此形成一黏結劑層24如圖2之說明。更特別地，作用 偏壓28形成Mg(0H)2在基板18的表面上其反應為The distance from the electrode 22 is similar! _ To 5 cm, and preferably approximately i⑽. The auxiliary electrode 25 provides an enhanced field strength and a uniform electric field. In a better specific range, the voltage 28 is applied to the substrate 18 in a range of U minutes, depending on the desired thickness of the resulting layer (currently discussed). More specifically, in this particular embodiment, a negative voltage of -5 refers to the time "minutes of current applied to the substrate 18" of 25 amps. Junction I, positively charged dissociated magnesium oxide particles adhere to the electrode 22, Therefore, an adhesive layer 24 is formed as shown in Fig. 2. More specifically, the bias voltage 28 is applied to form Mg (0H) 2 on the surface of the substrate 18, and the reaction is
Mg(N〇3)++細·痛g(〇H)2(s)+N〇3•。本揭露期望黏結劑層 24可以由取代的任何金屬氧化物，如氧化紹，氧化紀，氧 化鑭，或相似者形成。本揭露更加期望一更具導電性的金 屬氧化物，如氧化鐵，氧化錫，或相似者可以加到黏結劑 層24進一步增加黏結劑層24的導電率。 現在參考圖3,說明在簡化的橫截面圖示，是本發明製造 陰極結構的下-步驟。當黏結劑層24形成在基板18上，基 板18被浸在一溶劑中的一發射結構之膠質溶液32中。在該 特別具體實施例中，提供一電鑛槽3〇，或懸浮液槽，其中 已包含’由許多奈米碳管36懸浮在IpA 34所組成的溶液^ 中。依據所需的結果，一適當的分散劑（未表示）可以加到溶 液32以幫助懸浮液中的奈米碳管36之懸浮。 者從電壓源3 3施加一偏壓3 8。在一較佳且體實施 例 正電壓範圍5巧0伏特施加到基板1 8的時間間隔大約 在3〇秒至5分鐘的範圍，依據結果層所需的厚度而定（目前 200305187Mg (NO3) ++ fine · pain g (〇H) 2 (s) + NO3 •. It is contemplated in this disclosure that the binder layer 24 may be formed of any metal oxide substituted, such as oxide, oxide, lanthanum oxide, or the like. It is more desirable in this disclosure that a more conductive metal oxide such as iron oxide, tin oxide, or the like can be added to the adhesive layer 24 to further increase the electrical conductivity of the adhesive layer 24. Referring now to Fig. 3, a simplified cross-sectional illustration is illustrated, which is the next step in the fabrication of a cathode structure according to the present invention. When the adhesive layer 24 is formed on the substrate 18, the substrate 18 is immersed in a colloidal solution 32 of an emitting structure in a solvent. In this particular embodiment, an electric ore tank 30, or suspension tank, is provided which already contains ' a solution consisting of a plurality of nano carbon tubes 36 suspended in IpA 34. Depending on the desired result, an appropriate dispersant (not shown) can be added to the solution 32 to help suspend the carbon nanotubes 36 in the suspension. A bias voltage 3 8 is applied from the voltage source 3 3. In a preferred embodiment, the time interval between the application of a positive voltage range of 50 volts to the substrate 18 is approximately 30 seconds to 5 minutes, depending on the desired thickness of the resulting layer (currently 200305187).
纣論的）。更特別地，在該特別具體實施例中，一正偏壓38 的+50伏特施加到基板1 8大約30秒。偏壓38的作用提供奈米 碳管36移向黏結劑層24。 現在參考圖4,跟隨作用偏壓38到基板18及其結果奈米碳 管36移向黏結劑層24，基板18從懸浮液槽3〇取出及在 100-300。(：的溫度範圍的空氣中乾燥約5-2〇分鐘。乾燥後， 在真空中實施第二烘烤步驟，在35〇_5〇〇〇c的溫度範圍約 30-90分鐘。該熱處理步驟提供基板18形成附著性質及提供 形成由許多邊緣42，43，及44所定義的許多微島嶼4〇(如圖 5說明）在黏結劑層24中。該許多微島嶼4〇具有奈米碳管36 埋入微島嶼40的邊緣42，43，及44及從邊緣42，43，及44 突出。據此，說明的是根據本發明製造的一最終的場發射 陰極結構，參考50。本揭露期望的一具體實施例其中黏結 劑層24製造成一均勻的層以致埋入奈米碳管36時尚不需要 形成微島嗅40。 圖6是一簡化的流程圖說明根據本發明製造一場發射陰 極結構的方法60。 根據該新製程製備場發射陰極以導電陶瓷為開始，如 FODEL@，（含有Ag，Mo，或Cu)厚膜圖紋在侧矽玻璃上 。黏結劑沉積以·5 V作用到基板1分鐘電流為0.25安培在 異丙醇（ΙΡΑ)的5χ10·3Μ Mg(N03)2溶液中實施。形成 Mg(〇H)2在FODEL表面上的步驟之反應為Mg(N03)+ +20H ->Mg(0H)2(s)+N03·。該塗佈的基板接著轉移進入一 僅含（IPA)的液槽。具有架構（1 mm氧化鋁隔離物及不鏽鋼 -12- 200305187Let alone). More specifically, in this particular embodiment, a positive bias voltage of +50 volts of 38 is applied to the substrate 18 for about 30 seconds. The effect of the bias 38 provides that the carbon nanotubes 36 are moved toward the adhesive layer 24. Referring now to FIG. 4, following the application bias 38 to the substrate 18 and the resulting carbon nanotubes 36 move toward the adhesive layer 24, the substrate 18 is removed from the suspension tank 30 and at 100-300. (: In the temperature range of about 5 to 20 minutes for drying. After drying, the second baking step is performed in a vacuum, about 30 to 90 minutes at a temperature range of 350,000 to 50000c. This heat treatment step The substrate 18 is provided to form an adhesion property and to provide a plurality of micro islands 40 (as illustrated in FIG. 5) defined by a plurality of edges 42, 43, and 44 in the adhesive layer 24. The plurality of micro islands 40 have nano-carbon tubes 36 The edges 42, 43, and 44 embedded in the micro-island 40 protrude from and protrude from the edges 42, 43, and 44. According to this, a final field emission cathode structure made in accordance with the present invention is described, reference 50. This disclosure In a specific embodiment, the adhesive layer 24 is made into a uniform layer so that the embedded carbon nanotubes 36 do not need to form micro islands 40. Fig. 6 is a simplified flowchart illustrating a method for manufacturing a field cathode structure according to the present invention. 60. The field emission cathode prepared according to this new process starts with a conductive ceramic, such as FODEL @, (containing Ag, Mo, or Cu) thick film pattern on the side silica glass. The adhesive is deposited to apply 5 V to the substrate 1 Minute current is 0.25 amps in isopropanol ( The reaction of the step of forming Mg (〇H) 2 on the surface of FODEL is Mg (N03) + + 20H-> Mg (0H) 2 (s) + N03 .. The coated substrate is then transferred into a (IPA) -only liquid tank. Has a structure (1 mm alumina separator and stainless steel-12- 200305187
⑺ 輔助電極與夾子）的基板從固定液槽被轉移進入一懸浮液 槽含一 CN丁在IPA中的懸浮液中，其具有一低濃度的 DARVAN 821分散劑（3滴/100 ml)以增進其懸浮效果。實施 + 20 V作用到基板約30秒以沉積CNT。沉積後，基板在80〇c 二氣中乾無15分鐘’接著在480。C真空中供烤90分鐘。(⑺ Auxiliary electrode and clip) The substrate is transferred from the fixed liquid tank to a suspension tank containing a CN but in IPA suspension, which has a low concentration of DARVAN 821 dispersant (3 drops / 100 ml) to enhance Its suspension effect. A +20 V was applied to the substrate for about 30 seconds to deposit CNTs. After deposition, the substrate was dried in 80 ° C for 15 minutes' and then at 480 °. C. Bake in vacuum for 90 minutes.
據此，揭露的是一場發射裝置陰極及使用電泳沉積製造 一場發射裝置陰極的方法。更特別地，揭露的是一方法其 中許多步驟被用來提供黏結奈来碳管顆粒至黏結劑材料因 此形成一場發射陰極結構具有比那些先前習知技藝更大的 發射表面。如揭露，一個別溶液含一黏結劑材料起始沉積 2一基板的表面上。具有黏結劑材料沉積在其上的基板接 著浸入一奈米碳管懸浮液槽中及施加一電壓以提供奈米碳 官移動到黏結劑層。-當從液槽中取出，具有黏結劑材料 及奈米碳管顆㈣浮其上的基板承受熱處理 劑層的附著性質。在-特別的具體實施例中，奈 埋入由黏結劑材料形成的許多微島财其有部份是從微島 〜剡的眾造步！ “、知此項技藝的人士將發生進—步修正與改進。 明提供-場發射裝置陰極及使用電泳Accordingly, disclosed are a field emission device cathode and a method for manufacturing a field emission device cathode using electrophoretic deposition. More specifically, what is disclosed is a method in which many steps are used to provide the bonding of carbon nanotube particles to the binder material, thereby forming a field emission cathode structure having a larger emission surface than those previously known techniques. As disclosed, a separate solution containing a binder material is initially deposited on the surface of a substrate. The substrate having the adhesive material deposited thereon is then immersed in a nano-carbon tube suspension tank and a voltage is applied to provide nano-carbon molecules to move to the adhesive layer. -When taken out of the liquid tank, the substrate with the adhesive material and the carbon nanotube particles floating on it can withstand the adhesion of the heat treatment agent layer. In a particular embodiment, many micro islands made of adhesive materials are embedded in Nai, and some of them are made from micro islands ~ 剡! "People who know the art will make further corrections and improvements. Provide the cathode of the field emission device and use electrophoresis
=極的方法其中可以產生高的產率。更特;J 路的疋一方法而不偏離本發明的精神。我們期望 解’本發明不被限制在所示特定的製造步驟 附錄申請專利範圍包括所有修本’ 1场離本發明的精 200305187 ⑻= Extreme process where high yields can be produced. More specifically; J Lu's first method without departing from the spirit of the invention. We expect to understand that the present invention is not limited to the specific manufacturing steps shown in the appendix. The scope of the patent application includes all revisions.
範圍。 圖示簡單說色 、 對那些熟知此項技藝的人士從上面文中一較佳具體實施 例的詳細說明同時結合附圖，本發明前述及進一步與更特 別的目的及好處將變得更清楚，其中·· 圖“5以簡化的橫戴面圖示說明根據本發明製造一場發range. The illustration is simply color. For those who are familiar with this technology, from the above detailed description of a preferred embodiment, combined with the accompanying drawings, the foregoing and further and more special purposes and benefits of the present invention will become clearer. Figure 5 shows a simplified cross-sectional view illustrating the production of a hair in accordance with the present invention.
射陰極結構的方法的步驟及根據本發明方法形成最終：二 置結構；及 、 圖6是一簡化的程序圖說明根據本發明方法一 射陰極結構的方法。 Ik一％發 的元件不需 尺寸相對其 已在附圖中 明顯的為了簡單及易 依尺寸繪製。例如，為 他元件是誇大的。進一 重複的參考數字代表相 圖式代表符號說明 於說明，說明在附圖中 了清楚起見某些元件的 步，其中適當的考慮， 當的或類似的元件。 10,30 電錢槽 12 1占結劑溶液 14 溶劑 16 溶質鹽類 18 基板 20 表面 22 金屬電極 23,33 電源 24 點結劑層The steps of the method of injecting a cathode structure and forming the final according to the method of the present invention: a two-position structure; and FIG. 6 is a simplified process diagram illustrating a method of injecting a cathode structure according to the method of the present invention. Ik one% of the components need not be sized relative to what they have been shown in the drawings for simplicity and ease of size drawing. For example, the components for him are exaggerated. Further repeated reference numerals represent phases. Schematic representations of symbols are explained in the description, illustrating the steps of certain elements in the drawings for the sake of clarity, with due consideration given to current or similar elements. 10,30 Electric money slot 12 1Accounting solution 14 Solvent 16 Solute salts 18 Substrate 20 Surface 22 Metal electrode 23,33 Power supply 24 Point cement layer
-14- 200305187 (9)-14- 200305187 (9)
25 輔助電極 28,38 偏壓 32 膠質溶液 34 異丙醇 36 奈米碳管 40 微島嶼 42,43,44 邊緣 50 場發射陰極結構25 Auxiliary electrode 28, 38 Bias 32 Colloidal solution 34 Isopropanol 36 Nano carbon tube 40 Micro islands 42, 43, 44 Fringe 50 Field emission cathode structure
-15--15-
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| US8363201B2 (en) * | 2007-01-18 | 2013-01-29 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University | Flexible transparent electrodes via nanowires and sacrificial conductive layer |
| US20090314647A1 (en) * | 2007-02-24 | 2009-12-24 | E.I. Du Pont De Nemours And Company | Method for the electrochemical deposition of carbon nanotubes |
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| US8252165B2 (en) * | 2008-08-22 | 2012-08-28 | E I Du Pont De Nemours And Company | Method for the electrochemical deposition of carbon nanotubes |
| WO2010123482A2 (en) * | 2008-12-12 | 2010-10-28 | Massachusetts Institute Of Technology | High charge density structures, including carbon-based nanostructures and applications thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5019003A (en) * | 1989-09-29 | 1991-05-28 | Motorola, Inc. | Field emission device having preformed emitters |
| DE4405768A1 (en) * | 1994-02-23 | 1995-08-24 | Till Keesmann | Field emission cathode device and method for its manufacture |
| US5709577A (en) * | 1994-12-22 | 1998-01-20 | Lucent Technologies Inc. | Method of making field emission devices employing ultra-fine diamond particle emitters |
| US5872422A (en) * | 1995-12-20 | 1999-02-16 | Advanced Technology Materials, Inc. | Carbon fiber-based field emission devices |
| JPH11329217A (en) | 1998-05-15 | 1999-11-30 | Sony Corp | Manufacture of field emission type cathode |
| EP1061554A1 (en) * | 1999-06-15 | 2000-12-20 | Iljin Nanotech Co., Ltd. | White light source using carbon nanotubes and fabrication method thereof |
| US6462467B1 (en) * | 1999-08-11 | 2002-10-08 | Sony Corporation | Method for depositing a resistive material in a field emission cathode |
| US6342755B1 (en) | 1999-08-11 | 2002-01-29 | Sony Corporation | Field emission cathodes having an emitting layer comprised of electron emitting particles and insulating particles |
| KR100314094B1 (en) * | 1999-08-12 | 2001-11-15 | 김순택 | Method for fabricating a carbon nanotube field emitter using electrophoresis process |
| JP4579372B2 (en) * | 2000-05-01 | 2010-11-10 | パナソニック株式会社 | Electron emitting device, method for manufacturing electron emitting device, and image display device |
-
2001
- 2001-12-18 US US10/024,164 patent/US6902658B2/en not_active Expired - Fee Related
-
2002
- 2002-12-05 AU AU2002359578A patent/AU2002359578A1/en not_active Abandoned
- 2002-12-05 WO PCT/US2002/038567 patent/WO2003052785A1/en not_active Application Discontinuation
- 2002-12-17 TW TW091136435A patent/TWI264039B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI264039B (en) | 2006-10-11 |
| US6902658B2 (en) | 2005-06-07 |
| US20030111946A1 (en) | 2003-06-19 |
| WO2003052785A1 (en) | 2003-06-26 |
| AU2002359578A1 (en) | 2003-06-30 |
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