TW200304228A - Transistor circuit - Google Patents
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- TW200304228A TW200304228A TW092103619A TW92103619A TW200304228A TW 200304228 A TW200304228 A TW 200304228A TW 092103619 A TW092103619 A TW 092103619A TW 92103619 A TW92103619 A TW 92103619A TW 200304228 A TW200304228 A TW 200304228A
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- 239000003990 capacitor Substances 0.000 claims description 28
- 238000003860 storage Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 230000014759 maintenance of location Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 241000282376 Panthera tigris Species 0.000 claims 1
- 239000010410 layer Substances 0.000 description 29
- 239000010408 film Substances 0.000 description 27
- 239000011229 interlayer Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 101100489577 Solanum lycopersicum TFT10 gene Proteins 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 101100214494 Solanum lycopersicum TFT4 gene Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
200304228 發明說明(1) [發明所屬之技術領域] 尤 本發:係有關一種用以驅動各種元件之電晶體電路, 才一種可使其動作檢查容易進行的電晶體電路。 [先前技術] 以往,在顯示裝置及感測器等中,為 給或取出而利用電晶體。 、 私級之供
例如,作為平面顯示面板,有_種有機E 該有機EL顯示器係將有機EL元件作成晝將^ , 置並構成多勃拓隍此 v 4女放η ~ ” 卫將4兀件配 气I傅风夕數矩陣狀。又,该有機肛元件之驅 1動矩陣方式’在各書辛中設置開 〆 電晶體,以控制各晝;Π示 用之電晶體,控制其 中的=利/習知薄膜電晶11 (TFT)之有機EL面板 配置^構成 成例。有機EL面板係將上述畫素作矩陣 :朝列方向延伸的閘極線上,連接有作為由閉極線所 h擇n通逼薄膜電晶體的第1 TFT1 0之閘極。在兮第 極上連接有保姓接有朝行方向延伸的資料線DL,在其源 為低命题带持電容C S,而該保持電容以係連接在另一端 #CS:二::的電容線SL。又二第1 TFT10之源極與保持電 e •、’:,係連接在P通道薄膜電晶體之第2TFT4 0的 λ二^ :且’该第2TFT4〇之源極係連接在電源線VL,其汲 = 元件EL。又,有機EL元件EL之另一端係 連接在陰極電源CV。 因此’間極線GL在Η位準時第1TFT1 0會導通,此時的
314433.ptd 第4頁 圓_ iiili
B00304228 五、發明說明(2) —- 育料線DL的資料^保持在保持電容cs。然後,依據保持在 该保持電容cs的貧料(電位)控制第2TFT4〇之電流,並依據 该第2TFT40之電流使電流流到有機EIJt件EL而令其發光。 主此外,當第1TFT10導通時,對資料線DL供給對應於該 晝素之視頻信號。因此,對應於資料線供給之 號對保持電容CS進行充電,藉此第2TFT4〇將流通 y、3 電流’以進行有機EL元件EL之亮度控制。亦即,、之 2TFT4 0之間極電位,並控制流通於有機E 二=第 進行各畫素之色階顯示。 之嗓流,以 在。亥種有機EL面板之製造過程中,在形成於 之2個TFT等中會產生缺陷,而產生無法進行預定二,素中 素。上述缺陷係以預定之機率產生,欲完全防止’、不的畫 1½之產生有其困難。而且,由於很難以視覺辨識 I f缺 缺陷的暗點,因此藉由以雷射切斷配線等手法,=顯示該 素予以暗點化。 將缺陷晝 因此’必須進行各晝素之動作檢查。該檢查 中照射電子線等,並利用光檢測器等檢測出各晝务真空 之2次電子,雖有確認動作的方法,但該方法、所反射 率。 寸而無致 將開關 壓,藉此 發一種用 另 方面,在LCD之形成好晝素電極的階段 元件予以導通,並對補助電容及晝素電極施加電 進行充電於補助電容之電荷量的陣列測試,並開 以進行上述測試的陣列測試器。 然而 有機EL面板之1畫素係具有2個TFT, 在LCD之陣
200304228 r 玉,、發明說明(3) 列測試中,雖可進行第1 TFT之輸出測試,但無法進行第 2TFT之測試,亦即對有機EL元件是否進行電流供給(進行 發光)的測試。 本發明係鑑於上述課題而研創者,其目的在提供一種 可使用陣列測試器進行各晝素之動作測試的有機EL面板。 [發明内容] 本發明係具備有:一端連接在信號線,且在閘極接收 選擇信號而動作之第1電晶體;閘極連接有該第1電晶體之 另一端,以控制電流消耗或電流產生元件之相關電流的第 ft晶體,在上述第2電晶體之閘極與源極或汲極之間所產 生的電晶體電容為5 f F以上。 如此,藉由增大第2電晶體之電容,可讀出充電在此 之電荷,並進行電晶體之動作確認。 Λ 又,最好在上述第1電晶體之另一端與第2電晶體之閘 择,連接有電荷保持用之保持電容。 再者,本發明係具備有:一端連接在信號線,且在閘 極接收選擇信號而動作之第1電晶體;閘極連接有該第1電 晶體之另一端,以控制電流消耗或I流產生元件之相關電 流的第2電晶體;連接在上述第1電晶體之另一端及第2電 曰之閘極的電荷保持用之保持電容,在上述第2電晶體 之閘極與源極或汲極之間所產生的電晶體電容大小為上述 保持電容之電容的5 %以上。 如此’措由將第2電晶體之電容設定為保持電容之某 種程度以上,可讀出充電在此之電荷,並進行電晶體之動
314433.ptd 第6頁 泛00304228 五、發明說明(4) 作確認。 再者本务明係具傷有:一端連接在信號線,且| ^ 極接收選擇信號而動作第姊. 、,裏 在閘 曰辦夕玄一# 卜I弟1电日日月豆,閘極連接有該第旧 ^ 而,以控制電流消耗或電流產生元件之相關電 :的弟2電晶體,上述第2電晶體具備 二^ 極與源極或汲極之間所產 -:用^:大方'其閘 構。 ^ π展王扪私日日體電容的電容增加機 可 士此藉由增大第2電晶體(驅動電晶,)兩交 讀出:電=…,並進行電晶體:;;么“ 區域的二ί = 好將上述第2電晶體之通道 度,同時二:t 展’1維持通道寬度、通道長 度同4擴大通遏區域,以增大電晶體電容。 ^ 最好ί :到i:丄電晶體之另一端及第2電晶體的閘極, 取对逆接到%何保持用的保持電容。 释干述第1電晶體之-端的信號線,係供給 斗線,上述第2電晶體最好將與保持於保持 應的電流從電源線供給至有機EL元件。 L貝施方式] 以下,根據圖式說明本發明之實施形能。 第m係顯示有機EL顯示面板中之丨晝^的電晶體電路 f°與弟5圖同樣地,各畫素具備有第iTFn〇、保持電 =CS、第2TFT40、以及有機EL元件EL。而且,第2TFT4〇必 有電容,亦即第2TFT40之閘極·源極間具有電晶體電 谷 C d t r 〇 200304228 五、發明說明(5) 〜 姓命ίϋ施形態中,藉由導通第1TFT10,將其充電认 寺也合S及電晶體電容Cdtr ,並檢測出電晶體電容;保 電容值,以檢查第1TFT1〇及第2TFT4〇是否正之 1TFTT二藉以!L設定為預:之電塵’將第 出第itfti〇是否正^。伙貝料線DL充電的電荷量,可檢夠 此,=心體電容者 • VT; SL. Ϊ I ^ : ί : :VT,^ ^
Vk電位差設定為Vt#夺,則以Qt = csf V + 1將舁電源線 荷進行充電。因此,透過資料線D 屮/Cdtr · Vt之電 出電晶體電容Cdtr。 、" 欢出该電荷量,可測 此係T F T之間極與源極或汲 •形f源極、通道、沒極等區域時,路’或無法正常 ::電晶體之電荷量產生變化之故。在。…產生變化: 由杈测出該電晶體電容Cdt ^本貫施形態中,错 mm是否正常,亦即判定是否二正电二'乂可判定第 癱再者,該電晶體電容Cdtr之檢仃頌示。 即U荷量,亦可透過電源線U讀::=資料線二讀 即由於電源線VL係連接在電晶 ☆,电電荷量。亦 由此可檢測出充電於電晶體電::二另一端,故 在此,在上述的檢測中,;荷量。 情形時,則無法檢測出電晶體;;r二在CS有參差不齊的 包4 Cdtr之變化。保持
314433.ptd 200304228 五、發明說明(6) 電容CS為100fF左右,電晶體Cdtr為數fF左右,欲檢測出 電晶體電容Cdt r的保持電荷量有所困難。 因此,在本實施形態中,係較通常增加第2TFT40之電 晶體電容。此為藉由以下手法而進行者。 (1 )可藉由增大第2TFT40之通道面積而達成。亦即,電晶 體電容Cdt r可以下式表示。 [數學式1 ]
Cdtr=K· Sdtr/ds Sdtr = η· Wdtr · LdTr 在此,K為預定之常數,Sdtr為通道面積,ds為閘極 氧化膜之膜厚,η為第2TFT之並聯連接的個數,Wdtr為通 道寬度,LdTr為通道長度。 因此,藉由增大整個通道面積,可增大電晶體電容 Cd t r ° (2 )再者,藉由減小閘極氧化膜之膜厚d s,亦可增大電晶 體電容Cdtr。 籍由上述手法’最好將電晶體電容Cdt r設定在5 f F以 上,設定在1 0 f F以上則更為理想。又,藉由將保持電容CS 與Cdtr之比Cdtr/CS設定在5%以上(1 0%更佳),可確實地檢 測出電晶體電容C d t r。 又,亦可採取一種積極增加電晶體電容Cdtr之手段。 第2圖顯示一例之構成,並顯示由多晶矽等所構成之 主動層40a,更具體而言係變更通道區域之形狀,且增大 其面積。亦即,在電源線V L連接在主動層之一端,另一端
3]4433.ptd 第9頁 200304228 瓦、發明說明(7) 則連接在陽極5 0。在此,T F T係具有:閘極電極配置在比 主動層4 0 a更上方之頂閘極構造,閘極電極4 0 c在其間挾持 有閘極絕緣膜,且覆蓋主動層4 0 a之中央部分。該中央部 分為通道區域,其兩側為源極區域,及沒極區域。 此外,如第2圖所示,通道區域之一部分係以擴展面 積之方式突出形成於閘極電極4 0 c之下側。如此,藉由增 大閘極電極40c下方之通道區域,即可在不變更第2 TFT40 之能力下增大該電晶體電容Cdtr。 第3圖顯示其他例,在該例中顯示閘極電極4 0 c之一部 4·、非主動層40a上方之部分,亦即在從第2TFT40偏移之 部分中,使閘極電極4 0 c延伸至電源線VL之下方。藉此, 電源線VL與閘極線4 0 c隔著層間絕緣膜相向,且在此形成 電容。 - 第4圖顯示又一其他例,在該例中,與主動層同時另 作設置與主動層4 0 a同樣地由例如多晶矽所形成之半導體 層,將該半導體層之一端與電源線VL相接觸,利用的是將 主動層4 0 a與電源線V L予以連接的相同構造,而該半導體 層之另一端則延伸至閘極電極4 0 c之下方。藉此,隔著氧 化膜(閘極氧化膜)可使另一端連接在電源線VL之半導體層 閘極電極4 0 c之下方。半導體層在閘極電極4 0 c之下側 雖未接受雜質之摻雜,但藉由半導體層隔著閘極氧化膜與 閘極電極4 0 c相向之構成,可在此形成電容。 如上所述,藉由第2圖至第4圖之構成,可積極地增加 第2TFT40之電晶體電容Cdtr。因此,藉由具有該種第
314433.ptd 第 10 頁 200304228 五、發明說明(8) I 2TFT40之晝素的電路構成,利用檢測所增加之電晶體電容 C d t r,可檢查該晝素之動作。 特別是’該種檢查可在層積有機EL元件EL之有機層之 别進行。亦即’在形成陽極5 0之階段下可進行該項檢查。 而且,對於所發現之不良晝素(特別是亮度缺陷晝素),可 藉由雷射將配線切斷。 有機E L元件之場合’係在形成陽極5 〇後,形成第2平 坦化膜6 0。因此,可藉由該第2平坦化膜6 0,利用雷射, 填埋所產生之孔,並且可排除因製品之雷射修整所造成之 孔殘留的弊害。 在此,第6圖顯示第2TFT40與有機EL元件EL之剖面構 造。如圖示,第2 T F T 4 0係形成在玻璃基板3 0上,且該第 2TFT4 0具有由低溫多晶矽所形成之主動層40a。該主動層 4 0 a之兩端係形成摻雜有雜質之源極區域、沒極區域,而 丨,挾在上述兩區域之中央部係形成通道區域。在該通道區威 之上部,隔著由氧化矽所構成之閘極絕緣膜4 0 b而形成有 閘極電極4 0 c。閘極絕緣膜4 0 b及間極電極4 0 c係由層間把 緣膜3 4所覆蓋,在閘極電極4 0 c之兩側,形成有藉由層間 絶緣膜3 4之接觸孔而連接在源極區域及〉及極區域的源才> Λ Π β 極4 0 d、汲極電極4 0 e。而且,源極電極4 0 d、汲極電極 之上端係位於層間絕緣膜3 4之表面。 又,在層間絕緣膜3 4之表面上,配置有用以連接浓極 電極4 0 e與電源線VL的金屬配線等。且,覆蓋該層間絕緣 膜34,而形成第1平坦化膜36。
200304228 、發明說明(9) 之 接 透 此外’在弟1平土曰化胺 透明㊉n甘一化肤36之上面,形成有由IT0所構成 兔極5 0,其一端在益丄^ 在嗨叙τγτμ 而知错由第1平坦化膜36之接觸孔連 ^動TFT40之源極電極4〇d。 逆 明%榀:透j包極5 0係構成有機EL元件之陽極,在該 輸送層^ ^猎由電洞輸送層5 2、有機發光層5 4、電子 邊及例古而形成金屬製之陰極5 8。又,在透明電極5 0之周 =方配置有第2平坦化膜6〇。 Π 主動尨此’主動層4〇&係配置在玻璃基板30之正上方,在 •,帑4 〇 &上^著閉極絕緣膜4 0 b而形成有閘極電極4 0 c。 上層。f線VL係隔著層間絕緣膜34而形成在閘極電極4〇 c 電極“口此一如上所述’藉由採用變更主動層4 0 a、閘極 體層緣^及^電源線VL之形狀,或設置與主動層同層之半導 、電容增加機構,可增大第2 τ ρ T 4 0之電容。 亦可^,在上述之例中,第2 T F T 4 0雖係採用p通道τ F T,但 容c 用姆道T F τ ’此時,連接有機E L元件上側與保持電 丁 F T,&側,並且设置用來將其連接在低電壓電源的放電用 構成當電容CS進行資料改寫時使該TFT導通即可。有關該 净'記載在日本特願2 0 0 1 - 3 0 3 7 6 8號。 ★ IT^ /Yy\j ffr^L· /yjA WJ 器時★光顯示管及感測器等來取代有機EL元件。採用感測 τ ’係從電源線VL讀出電流。 保持啦者在上述電路中’在弟2TFT4 0之閘極雖只連接有 電路雙容C.S,但亦可連接有重設電路,記憶體電路等各種 (或元件)。在該情況下的元件可為主動元件,亦可為 又’在上述例中,雖顯示有機EL面板之構成,但亦
200304228 五、發明說明(ίο) 被動元件。 如以上之說明,根據本發明,藉由增大第2電晶體(驅 動電晶體)之電容,可讀出充電於此之電荷,並可進行電 晶體之動作確認。
314433.ptd 第13頁 200304228 圖式簡單說明 [圖式簡單說明] 第1圖係顯示實施形態之電路的示意圖。 第2圖係顯示用以使第2TFT之電容上昇之構成例的示 意圖。 第3圖係顯示用以使第2TFT之電容上昇之構成例的示 意圖。 第4圖係顯示用以使第2TFT之電容上昇之構成例的示 意圖。 第5圖係顯示晝素電路之構成的示意圖。 > 第6圖係顯示晝素部之剖面的示意圖。 10 第 1TFT 34 層 間絕緣膜 36 第 1平坦化膜 40 第 2TFT *4 0 a 主 動 層 40b 閘極絕緣膜 4 0c 閘 極 電極 40d 源極電極 40e 汲 極 電極 50 陽 極(透明電極) 52 電 洞 輸送層 54 有 機發光層 5 6 電 子 輸送層 60 第 2平坦化膜 •CS 保 持 電容 Cd 11 驅動電晶體電 Λ 資 料 線 GL 閘 極線 VL 電 源 線
314433.ptd 第14頁
Claims (1)
- 2r00304228 六、申請專利範圍 1 · 一種電晶體電路,其特 線,且在間極接收選擇作··:端連接在信號 k f = 虎而動作之第1電晶體;以及 甲B連接有該弟1電晶體之一 耗或元件之相關電流的第咖 的電晶體問極與源極或汲極之… 2 ·如申請專利範圍第1項卿+ ^ 1電晶體之另一端與第2電曰曰im,其;3 ’在上述第 持用之保持電容。日日肢之閘極,連接有電荷保 3· :種電路,f特徵為具備有:-端連接在信號 ,卩1 、I f接收ί擇信號而動作之第1電晶體; 耗或恭、、if有ί第1電晶體之另一端,以控制電流消 、:;:ΐ元件之相關電流的第2電晶體;以及 極的+1 # i述第1電晶體之另一端及第2電晶體之閘 極的电何保持用之保持電容;同時, 的電:i ΐ f Γ】晶Λ之間極與源極或汲極之間所產生 4. 種=電路,其特徵為具備有:一端連接在信號 ίί!極接收選擇信號而動作之第1電晶體;以及 耗或;η ΐ ΐ有ΐ第1電晶體之另-端,以控制電流消 一: >生疋件之相關電流的第2電晶體;同時, 或汲極^ ^ 2電晶體具備有:用以增大於其閘極與源極 5如申丄直Β所產生的電晶體電容的電容增加機構。 5·如申睛專利範圍第4項之電晶體電路,其中,上籌述電容 Ι1ΙΒ11 II» __ 4F II! 314433.ptd 第15頁 200304228 申請專利範圍 增加機構係將上述第2電晶體之通道區域的一部分予以 平面地擴展,並維持通道寬度、通道長度,同時擴大 通道區域,以增大電晶體電容。 如申請專利範圍第4項或第5項之電晶體電路,其中, 在上述第1電晶體之另一端與第2電晶體之閘極,連接 有電荷保持用之保持電容。 如申請專利範圍第2、3、6項中任1項之電晶體電路, 其中,連接有上述第1電晶體之一端的信號線,係供給 顯不貢料的貢料線5同時9 上述第2電晶體係將與保持於保持電容之電壓相對 應的電流從電源線供給至有機E L元件。 I Ιί II314433.ptd 第16頁
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US10373554B2 (en) | 2015-07-24 | 2019-08-06 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
CA2898282A1 (en) | 2015-07-24 | 2017-01-24 | Ignis Innovation Inc. | Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays |
CA2900170A1 (en) | 2015-08-07 | 2017-02-07 | Gholamreza Chaji | Calibration of pixel based on improved reference values |
CA2908285A1 (en) | 2015-10-14 | 2017-04-14 | Ignis Innovation Inc. | Driver with multiple color pixel structure |
CN108986747B (zh) * | 2018-07-25 | 2020-07-28 | 京东方科技集团股份有限公司 | 一种阵列基板、有机电致发光显示面板及显示装置 |
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GB2206721A (en) * | 1987-07-03 | 1989-01-11 | Philips Electronic Associated | Active matrix display device |
US6307322B1 (en) * | 1999-12-28 | 2001-10-23 | Sarnoff Corporation | Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage |
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2002
- 2002-03-15 JP JP2002072248A patent/JP4274734B2/ja not_active Expired - Lifetime
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2003
- 2003-02-21 TW TW092103619A patent/TW591803B/zh not_active IP Right Cessation
- 2003-03-13 CN CNB031196217A patent/CN1278490C/zh not_active Expired - Lifetime
- 2003-03-13 US US10/388,254 patent/US6914448B2/en not_active Expired - Lifetime
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JP4274734B2 (ja) | 2009-06-10 |
CN1461107A (zh) | 2003-12-10 |
US6914448B2 (en) | 2005-07-05 |
TW591803B (en) | 2004-06-11 |
CN1278490C (zh) | 2006-10-04 |
KR20030074451A (ko) | 2003-09-19 |
JP2003273122A (ja) | 2003-09-26 |
KR100499841B1 (ko) | 2005-07-07 |
US20040004218A1 (en) | 2004-01-08 |
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