SU424333A1 - Method of etching chrome films - Google Patents

Method of etching chrome films

Info

Publication number
SU424333A1
SU424333A1 SU1601394A SU1601394A SU424333A1 SU 424333 A1 SU424333 A1 SU 424333A1 SU 1601394 A SU1601394 A SU 1601394A SU 1601394 A SU1601394 A SU 1601394A SU 424333 A1 SU424333 A1 SU 424333A1
Authority
SU
USSR - Soviet Union
Prior art keywords
etching
solution
chromium
chrome films
etching chrome
Prior art date
Application number
SU1601394A
Other languages
Russian (ru)
Inventor
изо бретен
Г. Е. Ревзин К. И. Гутров Н. Л. Зелепухина Ю. И. Полещук А. А. Яровой
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to SU1601394A priority Critical patent/SU424333A1/en
Application granted granted Critical
Publication of SU424333A1 publication Critical patent/SU424333A1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/26Acidic compositions for etching refractory metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)

Description

Изобретение относитс  к технологии нзготовлени  микросхем QI фотошаблонов метод ф о то л и то гр а ф и и. Известеи способ травлеа-ш  пленок хромав растворе Сол ион кислоты .с добавкой хлористых -солей. Предлагаемый снособ отличаетс  от известного введением в ра.створ ,в качестве хлорйстой соли двухлорлетото олова в количестве 30-100 г/л 1 проведением процесса при 60 110°С. Это позвол ет интенсифицировать ирощесс и ловысить качество травлени . Пример 1. Пленку хролш толщи-ной 300 А, иаие.сенпую на керамическую ЛОДложку с 8 классом чистоты вакуумтермическим наиылеилем, подвергают в лрюцессе фотоллтографли на стадии дублени  фоторезиста нагреванию ла воздухе лри 250°С в течение 0,5 час. Травление хрома нро-извод т в нагретом до 75С 20%-лом растворе сол ной кислоты , содержащем 60 г/л двухлористого олова. Врем  травлени  15 сек. После растворе .ни  Хрсма ла иезапи1Л1,еННЫх фоторезистом участках подложку промывают водой и высугнивают . В результате видимых следов иестравлеклого хрома на подложке лод микроскопом .не обнаружено. П р и мер 2. Па керамическую подложку 7 класса члстоты лалое т в вакууме двухслойлое локрыт;1е лз хрома (толщила 250 А) и меди (толщина 0,6 мкм). После фото.титографии производилось гальваническое нараидлзаиие меди до толщины 60 мкм. Травление меди л а толщину 0,6 лг м/ проводилось 25%«ой азотиой кислотой, а затем лромытую водой подложку поместили в нагретый до 90°С раствор сол ной кислоты, содержаnuni 45 г/л двухлорлсгото олова. Врем  травлени  хрома 10 сек. При о бследовании иод микроскопом следов нестравленпого хрома и растравливани  медного сло  не обнаружено. Предмет изобретени  Слособ тра|Влели  иленок хрома в растворе сол ной К 1слоты с добавкой хлорлстых солей , отличающийс  тем, что, с целью лнтенсифлкации процесса л повыщени  качества травлени , в качестве хлористой соли в раство .р ввод т двухлористое олово .в кoлн ecтвe 30-100 г/л и ироцес.с лровод т при 60-110°С,The invention relates to the technology of manufacturing QI chips of photomasks, the method of f ity and then grafs. Izvesti is a method of etching films with a chromate solution of a Sol ion acid. With the addition of chloride salts of salts. The proposed snoot differs from the known one by introducing into the solution, as a chlorine salt, dichloro tin in an amount of 30-100 g / l 1 by carrying out the process at 60–110 ° C. This allows you to intensify the process and catch the quality of etching. Example 1. A 300 Å thick film of film, deposited on a ceramic LODdzhku with an 8th class of purity by vacuum thermal luminescence, is subjected to photollographly in the process of tanning a photoresist by heating the air at 250 ° C for 0.5 hour The etching of chromium nro-watered in a 20% hydrochloric acid solution containing 60 g / l of tin dichloride heated to 75 ° C. Etching time 15 sec. After the solution of Hrsmala la Yozapi1l1, the photoresist areas, the substrate is washed with water and dried. As a result of visible traces of izravleklem chromium on the substrate of the microscope is not detected. Example 2: Pa of a ceramic substrate of grade 7 laloe t in vacuum is two-layer coated; 1e lz of chromium (thickened 250 A) and copper (thickness of 0.6 μm). After photo-titography, galvanic copper was made up to a thickness of 60 μm. Copper was etched with a thickness of 0.6 lm m / carried out with 25% nitrous acid, and then the substrate washed with water was placed in a solution of hydrochloric acid heated to 90 ° C, containing 45 g / l of dichloro tin. Chrome etching time 10 sec. When examining the iodine microscope, no traces of non-etched chromium and etching of the copper layer were found. The subject of the invention The method of the route was instilled in chromium in a solution of hydrochloric acid with the addition of chlorine salts, characterized in that, in order to attenuate the process of improving the quality of etching, dichloride was added to the solution of salt in 30% -100 g / l and the irocess is carried out at 60-110 ° C,

SU1601394A 1970-12-21 1970-12-21 Method of etching chrome films SU424333A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU1601394A SU424333A1 (en) 1970-12-21 1970-12-21 Method of etching chrome films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU1601394A SU424333A1 (en) 1970-12-21 1970-12-21 Method of etching chrome films

Publications (1)

Publication Number Publication Date
SU424333A1 true SU424333A1 (en) 1974-04-15

Family

ID=20461724

Family Applications (1)

Application Number Title Priority Date Filing Date
SU1601394A SU424333A1 (en) 1970-12-21 1970-12-21 Method of etching chrome films

Country Status (1)

Country Link
SU (1) SU424333A1 (en)

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