SG170676A1 - Epitaxial wafer and production method thereof - Google Patents

Epitaxial wafer and production method thereof

Info

Publication number
SG170676A1
SG170676A1 SG201007280-9A SG2010072809A SG170676A1 SG 170676 A1 SG170676 A1 SG 170676A1 SG 2010072809 A SG2010072809 A SG 2010072809A SG 170676 A1 SG170676 A1 SG 170676A1
Authority
SG
Singapore
Prior art keywords
silicon
epitaxial wafer
production method
silicon substrate
growing
Prior art date
Application number
SG201007280-9A
Other languages
English (en)
Inventor
Nakai Katsuhiko
Mueller Timo
Ikari Atsushi
Ammon Wilfried Von
Weber Martin
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG170676A1 publication Critical patent/SG170676A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
SG201007280-9A 2009-10-08 2010-10-05 Epitaxial wafer and production method thereof SG170676A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009234494 2009-10-08

Publications (1)

Publication Number Publication Date
SG170676A1 true SG170676A1 (en) 2011-05-30

Family

ID=43259717

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201007280-9A SG170676A1 (en) 2009-10-08 2010-10-05 Epitaxial wafer and production method thereof

Country Status (7)

Country Link
US (1) US8241421B2 (ja)
EP (1) EP2309038B1 (ja)
JP (1) JP5568431B2 (ja)
KR (1) KR101178677B1 (ja)
CN (1) CN102031557B (ja)
SG (1) SG170676A1 (ja)
TW (1) TWI402383B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2977974B1 (fr) * 2011-07-13 2014-03-07 Soitec Silicon On Insulator Procede de mesure de defauts dans un substrat de silicium
JP6052189B2 (ja) * 2014-01-16 2016-12-27 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
CN104155302B (zh) * 2014-07-03 2017-02-15 胜科纳米（苏州）有限公司 检测硅晶体缺陷的方法
DE102015224983B4 (de) 2015-12-11 2019-01-24 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung
CN106884203A (zh) * 2015-12-15 2017-06-23 上海新昇半导体科技有限公司 单晶硅锭及晶圆的形成方法
CN108505114B (zh) * 2017-02-28 2021-03-05 胜高股份有限公司 外延生长晶圆及其制造方法
EP3428325B1 (en) 2017-07-10 2019-09-11 Siltronic AG Semiconductor wafer made of single-crystal silicon and process for the production thereof
JP7312402B2 (ja) * 2019-11-22 2023-07-21 株式会社アルバック 窒化物半導体基板の製造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19637182A1 (de) 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte
TW589415B (en) 1998-03-09 2004-06-01 Shinetsu Handotai Kk Method for producing silicon single crystal wafer and silicon single crystal wafer
WO1999057344A1 (fr) 1998-05-01 1999-11-11 Nippon Steel Corporation Plaquette de semi-conducteur en silicium et son procede de fabrication
JP3989122B2 (ja) 1998-08-07 2007-10-10 シルトロニック・ジャパン株式会社 シリコン半導体基板の製造方法
JPH11349393A (ja) 1998-06-03 1999-12-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法
DE69908965T2 (de) 1998-10-14 2004-05-13 Memc Electronic Materials, Inc. Wärmegetempertes einkristallines silizium mit niedriger fehlerdichte
JP4460671B2 (ja) 1999-03-26 2010-05-12 シルトロニック・ジャパン株式会社 シリコン半導体基板及びその製造方法
JP3589119B2 (ja) 1999-10-07 2004-11-17 三菱住友シリコン株式会社 エピタキシャルウェーハの製造方法
WO2001027362A1 (fr) 1999-10-15 2001-04-19 Shin-Etsu Handotai Co., Ltd. Microplaquette epitaxiale, silicium monocristallin a cet effet, procede de production et d'evaluation
DE10014650A1 (de) * 2000-03-24 2001-10-04 Wacker Siltronic Halbleitermat Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe
JP4182640B2 (ja) 2000-12-11 2008-11-19 株式会社Ｓｕｍｃｏ シリコン単結晶の育成方法
JP2003002785A (ja) 2001-06-15 2003-01-08 Shin Etsu Handotai Co Ltd 表層部にボイド無欠陥層を有する直径３００ｍｍ以上のシリコン単結晶ウエーハおよびその製造方法
JP4566478B2 (ja) 2001-08-09 2010-10-20 シルトロニック・ジャパン株式会社 シリコン半導体基板およびその製造方法
JP4567251B2 (ja) 2001-09-14 2010-10-20 シルトロニック・ジャパン株式会社 シリコン半導体基板およびその製造方法
JP4549589B2 (ja) 2001-09-14 2010-09-22 シルトロニック・ジャパン株式会社 シリコン半導体基板およびその製造方法
DE10205084B4 (de) * 2002-02-07 2008-10-16 Siltronic Ag Verfahren zur thermischen Behandlung einer Siliciumscheibe sowie dadurch hergestellte Siliciumscheibe
JP2004224642A (ja) 2003-01-23 2004-08-12 Siltronic Japan Corp 単結晶製造装置
KR100588425B1 (ko) 2003-03-27 2006-06-12 실트로닉 아게 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법
JP4670224B2 (ja) * 2003-04-01 2011-04-13 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
JP2006054350A (ja) 2004-08-12 2006-02-23 Komatsu Electronic Metals Co Ltd 窒素ドープシリコンウェーハとその製造方法
JP4797477B2 (ja) * 2005-04-08 2011-10-19 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
US7435294B2 (en) 2005-04-08 2008-10-14 Sumco Corporation Method for manufacturing silicon single crystal, and silicon wafer
JP5121139B2 (ja) 2005-12-27 2013-01-16 ジルトロニック アクチエンゲゼルシャフト アニールウエハの製造方法
SG142208A1 (en) 2006-10-18 2008-05-28 Siltronic Ag Process for producing p»-doped and epitaxially coated semiconductor wafers from silicon
JP4760822B2 (ja) 2007-12-14 2011-08-31 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法

Also Published As

Publication number Publication date
KR101178677B1 (ko) 2012-08-30
CN102031557B (zh) 2013-03-27
JP5568431B2 (ja) 2014-08-06
US20110084366A1 (en) 2011-04-14
JP2011098883A (ja) 2011-05-19
EP2309038B1 (en) 2013-01-02
EP2309038A1 (en) 2011-04-13
TW201132811A (en) 2011-10-01
CN102031557A (zh) 2011-04-27
TWI402383B (zh) 2013-07-21
KR20110038581A (ko) 2011-04-14
US8241421B2 (en) 2012-08-14

Similar Documents

Publication Publication Date Title
SG170676A1 (en) Epitaxial wafer and production method thereof
KR101478331B1 (ko) 에피택셜 탄화규소 단결정 기판의 제조 방법
TW200636099A (en) Method for manufacturing silicon single crystal, and silicon wafer
WO2009095764A8 (en) Method for growing p-type sic semiconductor single crystal and p-type sic semiconductor single crystal
DE602008004237D1 (de) Siliciumwafer und herstellungsverfahren dafür
TW200728523A (en) Epitaxial wafer and method for production of epitaxial wafer
TW200636098A (en) Method for growing silicon single crystal, and silicon wafer and SOI substrate using the same
WO2012002995A3 (en) Thin films and methods of making them using cyclohexasilane
EP2472566A3 (en) Template, method for manufacturing the template and method for manufacturing vertical type nitride-based semiconductor light emitting device using the template
WO2013061047A3 (en) Silicon carbide epitaxy
TW200613588A (en) Silicon wafer, method for manufacturing the same, and method for growing silicon single crystal
SG136030A1 (en) Method for manufacturing compound material wafers and method for recycling a used donor substrate
TW200833883A (en) Process for producing group III nitride crystal, group III nitride crystal substrate, and group III nitride semiconductor device
WO2013036376A3 (en) Methods for the epitaxial growth of silicon carbide
TW200741045A (en) Production methods of semiconductor crystal and semiconductor substrate
TW200723365A (en) Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon
TW200721373A (en) Method for recycling an epitaxied donor wafer
SG143214A1 (en) Silicon wafer and method for manufacturing the same
JP2014236093A5 (ja)
SG133504A1 (en) Annealed wafer and manufacturing method of annealed wafer
TW200942655A (en) Method for producing group III nitride wafers and group III nitride wafers
SG160274A1 (en) Semiconductor wafer composed of monocrystalline silicon and method for producing it
SG11201804874WA (en) Semiconductor wafer made of single-crystal silicon and process for the production thereof
TW200741044A (en) Semiconductor substrate, electronic device, optical device, and production methods therefor
TW200743141A (en) Epitaxial layer structure of gallium nitride-based compound semiconductor and fabricating method thereof