SG170030A1 - Integrated capacitive and inductive power sources for a plasma etching chamber - Google Patents
Integrated capacitive and inductive power sources for a plasma etching chamberInfo
- Publication number
- SG170030A1 SG170030A1 SG201101340-6A SG2011013406A SG170030A1 SG 170030 A1 SG170030 A1 SG 170030A1 SG 2011013406 A SG2011013406 A SG 2011013406A SG 170030 A1 SG170030 A1 SG 170030A1
- Authority
- SG
- Singapore
- Prior art keywords
- bottom electrode
- power sources
- plasma etching
- inductive power
- etching chamber
- Prior art date
Links
- 230000001939 inductive effect Effects 0.000 title abstract 3
- 238000001020 plasma etching Methods 0.000 title 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/363,703 US8911590B2 (en) | 2006-02-27 | 2006-02-27 | Integrated capacitive and inductive power sources for a plasma etching chamber |
Publications (1)
Publication Number | Publication Date |
---|---|
SG170030A1 true SG170030A1 (en) | 2011-04-29 |
Family
ID=38442879
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201405522RA SG10201405522RA (en) | 2006-02-27 | 2007-02-16 | Integrated capacitive and inductive power sources for a plasma etching chamber |
SG201101340-6A SG170030A1 (en) | 2006-02-27 | 2007-02-16 | Integrated capacitive and inductive power sources for a plasma etching chamber |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201405522RA SG10201405522RA (en) | 2006-02-27 | 2007-02-16 | Integrated capacitive and inductive power sources for a plasma etching chamber |
Country Status (8)
Country | Link |
---|---|
US (1) | US8911590B2 (ja) |
EP (1) | EP1989007A4 (ja) |
JP (1) | JP5215875B2 (ja) |
KR (1) | KR101342319B1 (ja) |
CN (1) | CN101426949B (ja) |
SG (2) | SG10201405522RA (ja) |
TW (2) | TWI460785B (ja) |
WO (1) | WO2007100528A2 (ja) |
Families Citing this family (39)
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---|---|---|---|---|
US7909960B2 (en) * | 2005-09-27 | 2011-03-22 | Lam Research Corporation | Apparatus and methods to remove films on bevel edge and backside of wafer |
US20070068623A1 (en) * | 2005-09-27 | 2007-03-29 | Yunsang Kim | Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor |
US8012306B2 (en) * | 2006-02-15 | 2011-09-06 | Lam Research Corporation | Plasma processing reactor with multiple capacitive and inductive power sources |
EP1860680A1 (en) * | 2006-05-22 | 2007-11-28 | New Power Plasma Co., Ltd. | Inductively coupled plasma reactor |
US7879184B2 (en) * | 2006-06-20 | 2011-02-01 | Lam Research Corporation | Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts |
US8398778B2 (en) | 2007-01-26 | 2013-03-19 | Lam Research Corporation | Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter |
WO2009009607A1 (en) * | 2007-07-12 | 2009-01-15 | Applied Materials, Inc. | Apparatus and method for processing a substrate edge region |
US20090286397A1 (en) * | 2008-05-15 | 2009-11-19 | Lam Research Corporation | Selective inductive double patterning |
US20100098875A1 (en) * | 2008-10-17 | 2010-04-22 | Andreas Fischer | Pre-coating and wafer-less auto-cleaning system and method |
JP5391659B2 (ja) * | 2008-11-18 | 2014-01-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US20110139748A1 (en) * | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
US20110204023A1 (en) * | 2010-02-22 | 2011-08-25 | No-Hyun Huh | Multi inductively coupled plasma reactor and method thereof |
US20120258607A1 (en) * | 2011-04-11 | 2012-10-11 | Lam Research Corporation | E-Beam Enhanced Decoupled Source for Semiconductor Processing |
KR101297264B1 (ko) * | 2011-08-31 | 2013-08-16 | (주)젠 | 이중 유도 결합 플라즈마 소스를 갖는 플라즈마 반응기 |
US20130098390A1 (en) * | 2011-10-25 | 2013-04-25 | Infineon Technologies Ag | Device for processing a carrier and a method for processing a carrier |
US9083182B2 (en) | 2011-11-21 | 2015-07-14 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency RF range |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
US9263240B2 (en) * | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
KR101971312B1 (ko) * | 2011-11-23 | 2019-04-22 | 램 리써치 코포레이션 | 다중 존 가스 주입 상부 전극 시스템 |
SG11201402447TA (en) | 2011-11-24 | 2014-06-27 | Lam Res Corp | Plasma processing chamber with flexible symmetric rf return strap |
JP6480417B2 (ja) * | 2013-03-28 | 2019-03-13 | ザ ケマーズ カンパニー エフシー リミテッド ライアビリティ カンパニー | ヒドロフルオロオレフィンエッチングガス混合物 |
EP2849204B1 (de) | 2013-09-12 | 2017-11-29 | Meyer Burger (Germany) AG | Plasmaerzeugungsvorrichtung |
US20150318150A1 (en) * | 2014-04-30 | 2015-11-05 | Lam Research Corporation | Real-time edge encroachment control for wafer bevel |
KR102278074B1 (ko) * | 2014-06-30 | 2021-07-19 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
CN106548914B (zh) * | 2015-09-17 | 2018-10-30 | 中微半导体设备(上海)有限公司 | 一种等离子体处理设备及其清洗***和方法 |
CN106611691B (zh) * | 2015-10-26 | 2018-10-12 | 中微半导体设备(上海)有限公司 | 多频脉冲等离子体处理装置及其处理方法和清洗方法 |
CN106920726B (zh) * | 2015-12-24 | 2018-10-12 | 中微半导体设备(上海)有限公司 | 等离子体处理装置及其清洗方法 |
CN107154332B (zh) * | 2016-03-03 | 2019-07-19 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置及方法 |
CN107369604B (zh) * | 2016-05-12 | 2019-10-11 | 北京北方华创微电子装备有限公司 | 反应腔室及半导体加工设备 |
CN108227413B (zh) * | 2016-12-15 | 2023-12-08 | 中微半导体设备(上海)股份有限公司 | 一种光刻胶去除装置及其清洗方法 |
US11217434B2 (en) | 2016-12-27 | 2022-01-04 | Evatec Ag | RF capacitive coupled dual frequency etch reactor |
CN109524324B (zh) * | 2017-09-19 | 2021-01-26 | 长鑫存储技术有限公司 | 半导体刻蚀设备 |
US10763150B2 (en) * | 2017-09-20 | 2020-09-01 | Applied Materials, Inc. | System for coupling a voltage to spatially segmented portions of the wafer with variable voltage |
US10784091B2 (en) * | 2017-09-29 | 2020-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process and related device for removing by-product on semiconductor processing chamber sidewalls |
US11177067B2 (en) | 2018-07-25 | 2021-11-16 | Lam Research Corporation | Magnetic shielding for plasma sources |
CN113113280B (zh) * | 2020-01-09 | 2022-06-10 | 江苏鲁汶仪器有限公司 | 等离子体处理***及其开合法拉第组件 |
CN114496693A (zh) * | 2020-11-11 | 2022-05-13 | 中微半导体设备(上海)股份有限公司 | 多区加热装置、下电极组件、等离子处理装置及调温方法 |
US20240203709A1 (en) * | 2021-04-09 | 2024-06-20 | Jusung Engineering Co., Ltd. | Substrate processing method and substrate processing device |
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US5198634A (en) * | 1990-05-21 | 1993-03-30 | Mattson Brad S | Plasma contamination removal process |
US6165311A (en) * | 1991-06-27 | 2000-12-26 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
US5273588A (en) | 1992-06-15 | 1993-12-28 | Materials Research Corporation | Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means |
TW296534B (ja) * | 1993-12-17 | 1997-01-21 | Tokyo Electron Co Ltd | |
DE69531880T2 (de) * | 1994-04-28 | 2004-09-09 | Applied Materials, Inc., Santa Clara | Verfahren zum Betreiben eines CVD-Reaktors hoher Plasma-Dichte mit kombinierter induktiver und kapazitiver Einkopplung |
US5540800A (en) * | 1994-06-23 | 1996-07-30 | Applied Materials, Inc. | Inductively coupled high density plasma reactor for plasma assisted materials processing |
US5685942A (en) * | 1994-12-05 | 1997-11-11 | Tokyo Electron Limited | Plasma processing apparatus and method |
US5688358A (en) * | 1995-03-08 | 1997-11-18 | Applied Materials, Inc. | R.F. plasma reactor with larger-than-wafer pedestal conductor |
US5817534A (en) * | 1995-12-04 | 1998-10-06 | Applied Materials, Inc. | RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers |
US6095084A (en) * | 1996-02-02 | 2000-08-01 | Applied Materials, Inc. | High density plasma process chamber |
US6054013A (en) * | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
US5810937A (en) * | 1996-03-13 | 1998-09-22 | Applied Materials, Inc. | Using ceramic wafer to protect susceptor during cleaning of a processing chamber |
US5788799A (en) | 1996-06-11 | 1998-08-04 | Applied Materials, Inc. | Apparatus and method for cleaning of semiconductor process chamber surfaces |
US6308654B1 (en) * | 1996-10-18 | 2001-10-30 | Applied Materials, Inc. | Inductively coupled parallel-plate plasma reactor with a conical dome |
US5824607A (en) * | 1997-02-06 | 1998-10-20 | Applied Materials, Inc. | Plasma confinement for an inductively coupled plasma reactor |
JP3676919B2 (ja) | 1997-10-09 | 2005-07-27 | 株式会社アルバック | 反応性イオンエッチング装置 |
JP3296292B2 (ja) * | 1998-06-26 | 2002-06-24 | 松下電器産業株式会社 | エッチング方法、クリーニング方法、及びプラズマ処理装置 |
US6178919B1 (en) * | 1998-12-28 | 2001-01-30 | Lam Research Corporation | Perforated plasma confinement ring in plasma reactors |
US6518190B1 (en) | 1999-12-23 | 2003-02-11 | Applied Materials Inc. | Plasma reactor with dry clean apparatus and method |
US6447636B1 (en) | 2000-02-16 | 2002-09-10 | Applied Materials, Inc. | Plasma reactor with dynamic RF inductive and capacitive coupling control |
TW473909B (en) * | 2000-07-03 | 2002-01-21 | Nanya Technology Corp | Method for forming deep trenches in semiconductor wafers |
US6872281B1 (en) * | 2000-09-28 | 2005-03-29 | Lam Research Corporation | Chamber configuration for confining a plasma |
US6716303B1 (en) | 2000-10-13 | 2004-04-06 | Lam Research Corporation | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same |
KR100442194B1 (ko) | 2002-03-04 | 2004-07-30 | 주식회사 씨싸이언스 | 웨이퍼 건식 식각용 전극 |
US6841943B2 (en) * | 2002-06-27 | 2005-01-11 | Lam Research Corp. | Plasma processor with electrode simultaneously responsive to plural frequencies |
JP2004083983A (ja) * | 2002-08-26 | 2004-03-18 | Applied Materials Inc | Ti膜形成方法 |
US8012306B2 (en) * | 2006-02-15 | 2011-09-06 | Lam Research Corporation | Plasma processing reactor with multiple capacitive and inductive power sources |
-
2006
- 2006-02-27 US US11/363,703 patent/US8911590B2/en active Active
-
2007
- 2007-02-16 JP JP2008556369A patent/JP5215875B2/ja active Active
- 2007-02-16 SG SG10201405522RA patent/SG10201405522RA/en unknown
- 2007-02-16 SG SG201101340-6A patent/SG170030A1/en unknown
- 2007-02-16 CN CN200780006844.5A patent/CN101426949B/zh active Active
- 2007-02-16 WO PCT/US2007/004224 patent/WO2007100528A2/en active Application Filing
- 2007-02-16 EP EP07751017A patent/EP1989007A4/en not_active Withdrawn
- 2007-02-26 TW TW096106430A patent/TWI460785B/zh active
- 2007-02-26 TW TW100129074A patent/TWI447807B/zh active
-
2008
- 2008-08-27 KR KR1020087021066A patent/KR101342319B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
TW201203359A (en) | 2012-01-16 |
SG10201405522RA (en) | 2014-10-30 |
JP5215875B2 (ja) | 2013-06-19 |
CN101426949A (zh) | 2009-05-06 |
TW200802591A (en) | 2008-01-01 |
US20070199658A1 (en) | 2007-08-30 |
TWI447807B (zh) | 2014-08-01 |
WO2007100528A2 (en) | 2007-09-07 |
CN101426949B (zh) | 2015-05-27 |
TWI460785B (zh) | 2014-11-11 |
KR101342319B1 (ko) | 2013-12-16 |
EP1989007A2 (en) | 2008-11-12 |
US8911590B2 (en) | 2014-12-16 |
WO2007100528A3 (en) | 2008-10-23 |
JP2009528676A (ja) | 2009-08-06 |
KR20080106417A (ko) | 2008-12-05 |
EP1989007A4 (en) | 2010-09-22 |
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