SG11201402447TA - Plasma processing chamber with flexible symmetric rf return strap - Google Patents

Plasma processing chamber with flexible symmetric rf return strap

Info

Publication number
SG11201402447TA
SG11201402447TA SG11201402447TA SG11201402447TA SG11201402447TA SG 11201402447T A SG11201402447T A SG 11201402447TA SG 11201402447T A SG11201402447T A SG 11201402447TA SG 11201402447T A SG11201402447T A SG 11201402447TA SG 11201402447T A SG11201402447T A SG 11201402447TA
Authority
SG
Singapore
Prior art keywords
processing chamber
plasma processing
return strap
flexible symmetric
symmetric
Prior art date
Application number
SG11201402447TA
Inventor
Rajinder Dhindsa
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG11201402447TA publication Critical patent/SG11201402447TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
SG11201402447TA 2011-11-24 2012-11-21 Plasma processing chamber with flexible symmetric rf return strap SG11201402447TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161563545P 2011-11-24 2011-11-24
PCT/US2012/066425 WO2013078434A1 (en) 2011-11-24 2012-11-21 Plasma processing chamber with flexible symmetric rf return strap

Publications (1)

Publication Number Publication Date
SG11201402447TA true SG11201402447TA (en) 2014-06-27

Family

ID=48465746

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201402447TA SG11201402447TA (en) 2011-11-24 2012-11-21 Plasma processing chamber with flexible symmetric rf return strap

Country Status (6)

Country Link
US (1) US9508530B2 (en)
KR (1) KR102011535B1 (en)
CN (1) CN104011838B (en)
SG (1) SG11201402447TA (en)
TW (1) TWI512781B (en)
WO (1) WO2013078434A1 (en)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
KR20180049208A (en) * 2009-08-31 2018-05-10 램 리써치 코포레이션 Radio frequency (rf) ground return arrangements
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US8898889B2 (en) * 2011-11-22 2014-12-02 Lam Research Corporation Chuck assembly for plasma processing
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
US9263240B2 (en) * 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
WO2013078098A1 (en) * 2011-11-23 2013-05-30 Lam Research Corporation Multi zone gas injection upper electrode system
KR102011535B1 (en) 2011-11-24 2019-08-16 램 리써치 코포레이션 Plasma processing chamber with flexible symmetric rf return strap
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9337000B2 (en) * 2013-10-01 2016-05-10 Lam Research Corporation Control of impedance of RF return path
US9401264B2 (en) * 2013-10-01 2016-07-26 Lam Research Corporation Control of impedance of RF delivery path
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9957615B2 (en) * 2013-09-13 2018-05-01 Applied Materials, Inc. Apparatus to improve substrate temperature uniformity
CN104637766B (en) * 2013-11-14 2017-02-08 中微半导体设备(上海)有限公司 Reaction cavity structure and semiconductor plasma processing system
US10269573B2 (en) * 2014-03-31 2019-04-23 Taiwan Semiconductor Manufacturing Company Ltd. Device and method for manufacturing a semiconductor structure
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US10475626B2 (en) 2015-03-17 2019-11-12 Applied Materials, Inc. Ion-ion plasma atomic layer etch process and reactor
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
KR102546317B1 (en) * 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Gas supply unit and substrate processing apparatus including the same
US20180213608A1 (en) * 2017-01-20 2018-07-26 Applied Materials, Inc. Electrostatic chuck with radio frequency isolated heaters
CN108538745B (en) * 2017-03-01 2022-01-07 北京北方华创微电子装备有限公司 Reaction chamber
JP7033926B2 (en) * 2017-04-26 2022-03-11 東京エレクトロン株式会社 Plasma processing equipment
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US11670490B2 (en) 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
CN111326382B (en) * 2018-12-17 2023-07-18 中微半导体设备(上海)股份有限公司 Capacitively coupled plasma etching equipment
CN112447475B (en) * 2019-09-05 2023-09-29 中微半导体设备(上海)股份有限公司 Plasma processing device with flexible dielectric sheet
JP2023514496A (en) * 2020-01-30 2023-04-06 ラム リサーチ コーポレーション Impedance matcher with elongated RF strap
US11380524B2 (en) 2020-03-19 2022-07-05 Applied Materials, Inc. Low resistance confinement liner for use in plasma chamber
USD943539S1 (en) 2020-03-19 2022-02-15 Applied Materials, Inc. Confinement plate for a substrate processing chamber
USD979524S1 (en) 2020-03-19 2023-02-28 Applied Materials, Inc. Confinement liner for a substrate processing chamber
CN113972124B (en) * 2020-07-23 2023-09-29 中微半导体设备(上海)股份有限公司 Grounding assembly, plasma processing device and working method thereof
WO2022245087A1 (en) * 2021-05-18 2022-11-24 주식회사 에스엠티 Strap and manufacturing method therefor
KR102584206B1 (en) * 2021-05-18 2023-10-05 주식회사 에스엠티 Strap and manufacturing method thereof

Family Cites Families (151)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
RU2094961C1 (en) 1989-07-20 1997-10-27 Уланов Игорь Максимович Transformer-type plasmatron
RU2022917C1 (en) 1989-09-27 1994-11-15 Уланов Игорь Максимович Process of preparing nitrogen oxide
RU2056702C1 (en) 1990-07-09 1996-03-20 Уланов Игорь Максимович Transformer-type plasmatron
US5183990A (en) 1991-04-12 1993-02-02 The Lincoln Electric Company Method and circuit for protecting plasma nozzle
JPH0521393A (en) 1991-07-11 1993-01-29 Sony Corp Plasma processor
US5349271A (en) 1993-03-24 1994-09-20 Diablo Research Corporation Electrodeless discharge lamp with spiral induction coil
US5822171A (en) 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
US5900103A (en) 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5620524A (en) 1995-02-27 1997-04-15 Fan; Chiko Apparatus for fluid delivery in chemical vapor deposition systems
US6902683B1 (en) 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
US5689215A (en) 1996-05-23 1997-11-18 Lam Research Corporation Method of and apparatus for controlling reactive impedances of a matching network connected between an RF source and an RF plasma processor
US5846883A (en) 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
US5968587A (en) 1996-11-13 1999-10-19 Applied Materials, Inc. Systems and methods for controlling the temperature of a vapor deposition apparatus
US5889252A (en) 1996-12-19 1999-03-30 Lam Research Corporation Method of and apparatus for independently controlling electric parameters of an impedance matching network
US6174377B1 (en) 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6924455B1 (en) 1997-06-26 2005-08-02 Applied Science & Technology, Inc. Integrated plasma chamber and inductively-coupled toroidal plasma source
US6841203B2 (en) 1997-12-24 2005-01-11 Tokyo Electron Limited Method of forming titanium film by CVD
US6273022B1 (en) 1998-03-14 2001-08-14 Applied Materials, Inc. Distributed inductively-coupled plasma source
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US5998933A (en) 1998-04-06 1999-12-07 Shun'ko; Evgeny V. RF plasma inductor with closed ferrite core
US6302964B1 (en) 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6335293B1 (en) 1998-07-13 2002-01-01 Mattson Technology, Inc. Systems and methods for two-sided etch of a semiconductor substrate
US6221221B1 (en) * 1998-11-16 2001-04-24 Applied Materials, Inc. Apparatus for providing RF return current path control in a semiconductor wafer processing system
US6178919B1 (en) 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6579805B1 (en) 1999-01-05 2003-06-17 Ronal Systems Corp. In situ chemical generator and method
KR100331544B1 (en) 1999-01-18 2002-04-06 윤종용 Method for introducing gases into a reactor chamber and a shower head used therein
US6392351B1 (en) 1999-05-03 2002-05-21 Evgeny V. Shun'ko Inductive RF plasma source with external discharge bridge
US6206972B1 (en) 1999-07-08 2001-03-27 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
EP1212775A1 (en) 1999-08-06 2002-06-12 Advanced Energy Industries, Inc. Inductively coupled ring-plasma source apparatus for processing gases and materials and method thereof
JP2003530481A (en) 1999-11-19 2003-10-14 ナノ スケール サーフェイス システムズ インコーポレイテッド Systems and methods for depositing inorganic / organic dielectric films
US6337460B2 (en) 2000-02-08 2002-01-08 Thermal Dynamics Corporation Plasma arc torch and method for cutting a workpiece
US6261408B1 (en) * 2000-02-16 2001-07-17 Applied Materials, Inc. Method and apparatus for semiconductor processing chamber pressure control
US6894245B2 (en) 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US7220937B2 (en) 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
JP2003529926A (en) 2000-03-30 2003-10-07 東京エレクトロン株式会社 Method and apparatus for adjustable gas injection into a plasma processing system
US6494958B1 (en) 2000-06-29 2002-12-17 Applied Materials Inc. Plasma chamber support with coupled electrode
AU2001279189A1 (en) 2000-08-08 2002-02-18 Tokyo Electron Limited Plasma processing method and apparatus
US6302965B1 (en) 2000-08-15 2001-10-16 Applied Materials, Inc. Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces
US20020197402A1 (en) 2000-12-06 2002-12-26 Chiang Tony P. System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
JP3924483B2 (en) 2001-03-19 2007-06-06 アイピーエス リミテッド Chemical vapor deposition equipment
US6755150B2 (en) 2001-04-20 2004-06-29 Applied Materials Inc. Multi-core transformer plasma source
US6974523B2 (en) * 2001-05-16 2005-12-13 Lam Research Corporation Hollow anode plasma reactor and method
US6527911B1 (en) * 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber
TWI234417B (en) 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
US20030027428A1 (en) 2001-07-18 2003-02-06 Applied Materials, Inc. Bypass set up for integration of remote optical endpoint for CVD chamber
US6984288B2 (en) 2001-08-08 2006-01-10 Lam Research Corporation Plasma processor in plasma confinement region within a vacuum chamber
US20030045098A1 (en) 2001-08-31 2003-03-06 Applied Materials, Inc. Method and apparatus for processing a wafer
US6855906B2 (en) 2001-10-16 2005-02-15 Adam Alexander Brailove Induction plasma reactor
US6590344B2 (en) 2001-11-20 2003-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Selectively controllable gas feed zones for a plasma reactor
KR100450068B1 (en) 2001-11-23 2004-09-24 주성엔지니어링(주) Multi-sectored flat board type showerhead used in CVD apparatus
WO2003073489A1 (en) 2002-02-28 2003-09-04 Tokyo Electron Limited Plasma processing device and feeding unit
US6646233B2 (en) 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
FR2838020B1 (en) 2002-03-28 2004-07-02 Centre Nat Rech Scient PLASMA CONTAINMENT DEVICE
US20030188685A1 (en) 2002-04-08 2003-10-09 Applied Materials, Inc. Laser drilled surfaces for substrate processing chambers
US7013834B2 (en) 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
CN100360704C (en) 2002-06-28 2008-01-09 东京电子株式会社 Method and system for arc suppression in a plasma processing system
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
TWI283899B (en) 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US7256132B2 (en) 2002-07-31 2007-08-14 Applied Materials, Inc. Substrate centering apparatus and method
US20040027781A1 (en) 2002-08-12 2004-02-12 Hiroji Hanawa Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling
US20030015965A1 (en) 2002-08-15 2003-01-23 Valery Godyak Inductively coupled plasma reactor
US6887521B2 (en) 2002-08-15 2005-05-03 Micron Technology, Inc. Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices
US20040040502A1 (en) 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040040503A1 (en) 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US6887317B2 (en) 2002-09-10 2005-05-03 Applied Materials, Inc. Reduced friction lift pin
US7252738B2 (en) 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
US7163602B2 (en) 2003-03-07 2007-01-16 Ogle John S Apparatus for generating planar plasma using concentric coils and ferromagnetic cores
US7335396B2 (en) 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
US8409400B2 (en) 2003-05-07 2013-04-02 Gen Co., Ltd. Inductive plasma chamber having multi discharge tube bridge
US7455748B2 (en) 2003-06-20 2008-11-25 Lam Research Corporation Magnetic enhancement for mechanical confinement of plasma
US7144521B2 (en) 2003-08-22 2006-12-05 Lam Research Corporation High aspect ratio etch using modulation of RF powers of various frequencies
JP4607517B2 (en) 2003-09-03 2011-01-05 東京エレクトロン株式会社 Plasma processing equipment
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7464662B2 (en) 2004-01-28 2008-12-16 Tokyo Electron Limited Compact, distributed inductive element for large scale inductively-coupled plasma sources
US7712434B2 (en) 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US7169256B2 (en) 2004-05-28 2007-01-30 Lam Research Corporation Plasma processor with electrode responsive to multiple RF frequencies
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
CN101818336B (en) 2004-07-05 2011-09-14 东京毅力科创株式会社 Processing apparatus and heater unit
US7534301B2 (en) * 2004-09-21 2009-05-19 Applied Materials, Inc. RF grounding of cathode in process chamber
US7323116B2 (en) 2004-09-27 2008-01-29 Lam Research Corporation Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage
US7393432B2 (en) 2004-09-29 2008-07-01 Lam Research Corporation RF ground switch for plasma processing system
US7244311B2 (en) 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
US20060237138A1 (en) 2005-04-26 2006-10-26 Micron Technology, Inc. Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes
US8092638B2 (en) 2005-10-11 2012-01-10 Applied Materials Inc. Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution
US7397232B2 (en) 2005-10-21 2008-07-08 The University Of Akron Coulter counter having a plurality of channels
US8674255B1 (en) 2005-12-08 2014-03-18 Lam Research Corporation Apparatus and method for controlling etch uniformity
US7683289B2 (en) 2005-12-16 2010-03-23 Lam Research Corporation Apparatus and method for controlling plasma density profile
US20070170155A1 (en) 2006-01-20 2007-07-26 Fink Steven T Method and apparatus for modifying an etch profile
US7619179B2 (en) 2006-01-20 2009-11-17 Tokyo Electron Limited Electrode for generating plasma and plasma processing apparatus using same
US8012306B2 (en) 2006-02-15 2011-09-06 Lam Research Corporation Plasma processing reactor with multiple capacitive and inductive power sources
US8097120B2 (en) 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
US8911590B2 (en) 2006-02-27 2014-12-16 Lam Research Corporation Integrated capacitive and inductive power sources for a plasma etching chamber
US7432467B2 (en) 2006-03-28 2008-10-07 Tokyo Electron Limited Plasma processing apparatus
US8138445B2 (en) 2006-03-30 2012-03-20 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US8231799B2 (en) 2006-04-28 2012-07-31 Applied Materials, Inc. Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone
US7722778B2 (en) * 2006-06-28 2010-05-25 Lam Research Corporation Methods and apparatus for sensing unconfinement in a plasma processing chamber
US7837826B2 (en) 2006-07-18 2010-11-23 Lam Research Corporation Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof
US7829815B2 (en) 2006-09-22 2010-11-09 Taiwan Semiconductor Manufacturing Co., Ltd. Adjustable electrodes and coils for plasma density distribution control
US7482550B2 (en) 2006-10-16 2009-01-27 Lam Research Corporation Quartz guard ring
DE102006048816A1 (en) 2006-10-16 2008-04-17 Iplas Innovative Plasma Systems Gmbh Apparatus and method for local generation of microwave plasmas
US8043430B2 (en) * 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
US7732728B2 (en) * 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
CN101583736A (en) 2007-01-19 2009-11-18 应用材料股份有限公司 Plasma immersion chamber
US20080179008A1 (en) 2007-01-30 2008-07-31 Collins Kenneth S Reactor for wafer backside polymer removal using an etch plasma feeding a lower process zone and a scavenger plasma feeding an upper process zone
US7897213B2 (en) 2007-02-08 2011-03-01 Lam Research Corporation Methods for contained chemical surface treatment
US7972470B2 (en) 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
WO2008154222A1 (en) 2007-06-06 2008-12-18 Mks Instruments, Inc. Particle reduction through gas and plasma source control
US20090025879A1 (en) 2007-07-26 2009-01-29 Shahid Rauf Plasma reactor with reduced electrical skew using a conductive baffle
US9287096B2 (en) 2007-09-27 2016-03-15 Lam Research Corporation Methods and apparatus for a hybrid capacitively-coupled and an inductively-coupled plasma processing system
US20090109595A1 (en) 2007-10-31 2009-04-30 Sokudo Co., Ltd. Method and system for performing electrostatic chuck clamping in track lithography tools
CN102027574B (en) * 2008-02-08 2014-09-10 朗姆研究公司 A protective coating for a plasma processing chamber part and a method of use
KR101659095B1 (en) 2008-02-08 2016-09-22 램 리써치 코포레이션 Adjustable gap capacitively coupled rf plasma reactor including lateral bellows and non-contact particle seal
US7558045B1 (en) 2008-03-20 2009-07-07 Novellus Systems, Inc. Electrostatic chuck assembly with capacitive sense feature, and related operating method
JP5294669B2 (en) 2008-03-25 2013-09-18 東京エレクトロン株式会社 Plasma processing equipment
US20090275206A1 (en) 2008-05-05 2009-11-05 Applied Materials, Inc. Plasma process employing multiple zone gas distribution for improved uniformity of critical dimension bias
KR100992392B1 (en) * 2008-05-09 2010-11-05 주식회사 디엠에스 A plasma chemical reactor
US8679288B2 (en) 2008-06-09 2014-03-25 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
US8206552B2 (en) 2008-06-25 2012-06-26 Applied Materials, Inc. RF power delivery system in a semiconductor apparatus
JP5144594B2 (en) 2008-06-30 2013-02-13 ヤフー株式会社 Server apparatus, prediction method and program in server apparatus
JP5265770B2 (en) 2008-07-07 2013-08-14 ラム リサーチ コーポレーション Capacitively coupled electrostatic (CCE) probe arrangement for detecting dechuck in a plasma processing chamber, method associated therewith, and program storage medium storing computer readable code for performing the method
KR20100031960A (en) 2008-09-17 2010-03-25 삼성전자주식회사 Plasma generating apparatus
JP5295833B2 (en) 2008-09-24 2013-09-18 株式会社東芝 Substrate processing apparatus and substrate processing method
US20100098875A1 (en) * 2008-10-17 2010-04-22 Andreas Fischer Pre-coating and wafer-less auto-cleaning system and method
US8070925B2 (en) 2008-10-17 2011-12-06 Applied Materials, Inc. Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target
US20100116788A1 (en) 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
KR20110099122A (en) * 2008-12-03 2011-09-06 어플라이드 머티어리얼스, 인코포레이티드 Modulation of rf returning straps for uniformity control
US8099995B2 (en) 2008-12-16 2012-01-24 Agilent Technologies, Inc. Choked flow isolator for noise reduction in analytical systems
TWI527930B (en) * 2009-02-04 2016-04-01 應用材料股份有限公司 Ground return for plasma processes
US8900471B2 (en) * 2009-02-27 2014-12-02 Applied Materials, Inc. In situ plasma clean for removal of residue from pedestal surface without breaking vacuum
US8503151B2 (en) 2009-09-30 2013-08-06 Lam Research Corporation Plasma arrestor insert
KR101723253B1 (en) 2009-08-31 2017-04-04 램 리써치 코포레이션 A local plasma confinement and pressure control arrangement and methods thereof
KR20180049208A (en) * 2009-08-31 2018-05-10 램 리써치 코포레이션 Radio frequency (rf) ground return arrangements
JP5432686B2 (en) * 2009-12-03 2014-03-05 東京エレクトロン株式会社 Plasma processing equipment
US8485128B2 (en) * 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
JP5597463B2 (en) * 2010-07-05 2014-10-01 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
US9117767B2 (en) 2011-07-21 2015-08-25 Lam Research Corporation Negative ion control for dielectric etch
US20130059448A1 (en) 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
WO2012048121A1 (en) 2010-10-08 2012-04-12 Cooper Technologies Company Solid-core surge arrester
US8618446B2 (en) 2011-06-30 2013-12-31 Applied Materials, Inc. Substrate support with substrate heater and symmetric RF return
US9039911B2 (en) 2012-08-27 2015-05-26 Lam Research Corporation Plasma-enhanced etching in an augmented plasma processing system
US8652298B2 (en) 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers
US8898889B2 (en) 2011-11-22 2014-12-02 Lam Research Corporation Chuck assembly for plasma processing
KR102011535B1 (en) 2011-11-24 2019-08-16 램 리써치 코포레이션 Plasma processing chamber with flexible symmetric rf return strap
JP5166595B2 (en) 2011-12-16 2013-03-21 株式会社藤商事 Game machine
US8932429B2 (en) 2012-02-23 2015-01-13 Lam Research Corporation Electronic knob for tuning radial etch non-uniformity at VHF frequencies
US9881772B2 (en) 2012-03-28 2018-01-30 Lam Research Corporation Multi-radiofrequency impedance control for plasma uniformity tuning
US9018022B2 (en) 2012-09-24 2015-04-28 Lam Research Corporation Showerhead electrode assembly in a capacitively coupled plasma processing apparatus

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