SG155827A1 - Induction heating coil and method for melting granules composed of semiconductor material - Google Patents
Induction heating coil and method for melting granules composed of semiconductor materialInfo
- Publication number
- SG155827A1 SG155827A1 SG200809306-4A SG2008093064A SG155827A1 SG 155827 A1 SG155827 A1 SG 155827A1 SG 2008093064 A SG2008093064 A SG 2008093064A SG 155827 A1 SG155827 A1 SG 155827A1
- Authority
- SG
- Singapore
- Prior art keywords
- induction heating
- heating coil
- semiconductor material
- granules composed
- melting granules
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/001—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/36—Coil arrangements
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Induction Heating (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008013326A DE102008013326B4 (de) | 2008-03-10 | 2008-03-10 | Induktionsheizspule und Verfahren zum Schmelzen von Granulat aus Halbleitermaterial |
Publications (1)
Publication Number | Publication Date |
---|---|
SG155827A1 true SG155827A1 (en) | 2009-10-29 |
Family
ID=40952876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200809306-4A SG155827A1 (en) | 2008-03-10 | 2008-12-17 | Induction heating coil and method for melting granules composed of semiconductor material |
Country Status (8)
Country | Link |
---|---|
US (1) | US9084296B2 (de) |
JP (1) | JP5227854B2 (de) |
KR (1) | KR100999476B1 (de) |
CN (1) | CN101532171B (de) |
DE (1) | DE102008013326B4 (de) |
DK (1) | DK176877B1 (de) |
SG (1) | SG155827A1 (de) |
TW (1) | TWI398193B (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009051010B4 (de) * | 2009-10-28 | 2012-02-23 | Siltronic Ag | Vorrichtung zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat |
DE102009052745A1 (de) | 2009-11-11 | 2011-05-12 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat |
DE102010006724B4 (de) * | 2010-02-03 | 2012-05-16 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Silizium unter Verwendung von geschmolzenem Granulat |
CA2795395C (en) * | 2010-04-13 | 2018-05-29 | Schmid Silicon Technology Gmbh | Production of monocrystalline semiconductor materials |
JP2012046381A (ja) * | 2010-08-27 | 2012-03-08 | Sumitomo Chemical Co Ltd | 樹脂被覆粒状肥料の製造方法 |
DE102014207149A1 (de) * | 2014-04-14 | 2015-10-29 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Einkristalls aus Silizium |
DE102014210936B3 (de) * | 2014-06-06 | 2015-10-22 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial |
DE102014226419A1 (de) | 2014-12-18 | 2016-06-23 | Siltronic Ag | Verfahren zum Züchten eines Einkristalls durch Kristallisieren des Einkristalls aus einer Fließzone |
CN116288650B (zh) * | 2023-05-24 | 2023-08-29 | 苏州晨晖智能设备有限公司 | 以颗粒硅为原料的硅单晶生长装置和生长方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4157373A (en) * | 1972-04-26 | 1979-06-05 | Rca Corporation | Apparatus for the production of ribbon shaped crystals |
US4220839A (en) * | 1978-01-05 | 1980-09-02 | Topsil A/S | Induction heating coil for float zone melting of semiconductor rods |
DE3226713A1 (de) | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Als flachspule ausgebildete induktionsheizspule zum tiegelfreien zonenschmelzen |
DE3625669A1 (de) * | 1986-07-29 | 1988-02-04 | Siemens Ag | Induktionsheizer zum tiegelfreien zonenschmelzen |
JPS6448391A (en) * | 1987-04-27 | 1989-02-22 | Shinetsu Handotai Kk | Single winding induction heating coil used in floating zone melting method |
JP2660225B2 (ja) | 1988-08-11 | 1997-10-08 | 住友シチックス株式会社 | シリコン鋳造装置 |
JP2759604B2 (ja) * | 1993-10-21 | 1998-05-28 | 信越半導体株式会社 | 誘導加熱コイル |
JP2754163B2 (ja) * | 1994-05-31 | 1998-05-20 | 信越半導体株式会社 | 高周波誘導加熱コイル |
JP3127981B2 (ja) * | 1995-01-31 | 2001-01-29 | 信越半導体株式会社 | 高周波誘導加熱装置 |
RU2191228C1 (ru) * | 2001-04-20 | 2002-10-20 | Федеральное государственное унитарное предприятие "Конструкторское бюро общего машиностроения им. В.П.Бармина" | Устройство для плавления и кристаллизации материалов |
DE10204178B4 (de) | 2002-02-01 | 2008-01-03 | Siltronic Ag | Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Halbleitermaterial |
KR100588425B1 (ko) * | 2003-03-27 | 2006-06-12 | 실트로닉 아게 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
US7691199B2 (en) * | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
JP5080971B2 (ja) * | 2004-06-18 | 2012-11-21 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 結晶製造装置に溶融ソース材料を装入する方法および溶融装置アッセンブリ |
US7465351B2 (en) * | 2004-06-18 | 2008-12-16 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
-
2008
- 2008-03-10 DE DE102008013326A patent/DE102008013326B4/de not_active Expired - Fee Related
- 2008-12-17 SG SG200809306-4A patent/SG155827A1/en unknown
- 2008-12-31 KR KR1020080138737A patent/KR100999476B1/ko active IP Right Grant
-
2009
- 2009-01-13 CN CN2009100022404A patent/CN101532171B/zh not_active Expired - Fee Related
- 2009-02-06 TW TW098103837A patent/TWI398193B/zh not_active IP Right Cessation
- 2009-02-26 US US12/393,154 patent/US9084296B2/en not_active Expired - Fee Related
- 2009-03-10 DK DKPA200900325A patent/DK176877B1/da not_active IP Right Cessation
- 2009-03-10 JP JP2009055941A patent/JP5227854B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101532171B (zh) | 2012-06-27 |
JP5227854B2 (ja) | 2013-07-03 |
KR20090097097A (ko) | 2009-09-15 |
DK176877B1 (da) | 2010-02-08 |
DK200900325A (da) | 2009-09-11 |
TWI398193B (zh) | 2013-06-01 |
KR100999476B1 (ko) | 2010-12-09 |
US9084296B2 (en) | 2015-07-14 |
DE102008013326A1 (de) | 2009-09-17 |
CN101532171A (zh) | 2009-09-16 |
DE102008013326B4 (de) | 2013-03-28 |
TW200939891A (en) | 2009-09-16 |
US20090223949A1 (en) | 2009-09-10 |
JP2009215159A (ja) | 2009-09-24 |
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