KR100999476B1 - 유도 가열 코일 및 반도체 재료로 이루어진 입자의 용해 방법 - Google Patents
유도 가열 코일 및 반도체 재료로 이루어진 입자의 용해 방법 Download PDFInfo
- Publication number
- KR100999476B1 KR100999476B1 KR1020080138737A KR20080138737A KR100999476B1 KR 100999476 B1 KR100999476 B1 KR 100999476B1 KR 1020080138737 A KR1020080138737 A KR 1020080138737A KR 20080138737 A KR20080138737 A KR 20080138737A KR 100999476 B1 KR100999476 B1 KR 100999476B1
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- KR
- South Korea
- Prior art keywords
- induction heating
- heating coil
- coil
- semiconductor material
- coil body
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/001—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/36—Coil arrangements
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Induction Heating (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims (9)
- 배출 튜브를 구비한 플레이트 상에 반도체 재료로 이루어진 입자를 용해하기 위한 유도 가열 코일로서,상기 가열 코일은 전류 안내 슬롯을 마련하고 있고 상부과 하부를 구비하며 중앙 외측에 코일 바디 부근의 입자를 위한 통과 개구가 위치하는 코일 바디, 및 코일 바디의 하부 중앙에서 돌출하고 웹에 의해 하단에서 전기 전도적으로 연결된 전류 운반 세그먼트를 포함하는 것인 유도 가열 코일.
- 제1항에 있어서, 상기 전류 안내 슬롯 중 적어도 하나는 통과 개구를 형성하기 위해 확장되는 것인 유도 가열 코일.
- 제1항 또는 제2항에 있어서, 상기 세그먼트는 원뿔대 형상을 형성하는 것인 유도 가열 코일.
- 제1항 또는 제2항에 있어서, 상기 전류 운반 세그먼트의 외부 표면의 경사각과 상기 배출 튜브의 내부 표면의 경사각이 동일한 것인 유도 가열 코일.
- 제1항 또는 제2항에 있어서, 상기 코일 바디와 세그먼트를 냉각하기 위한 냉각 시스템을 특징으로 하는 유도 가열 코일.
- 제5항에 있어서, 상기 냉각 시스템은, 냉각제가 통과하여 흐르고 코일 바디의 상부 중앙에서 전류 운반 세그먼트와 접촉하는 감긴(wound) 튜브 브리지를 포함하는 것인 유도 가열 코일.
- 배출 튜브를 구비한 플레이트 상에 반도체 재료로 이루어진 입자를 유도 가열 코일에 의해 용해하는 방법으로서,배출 튜브를 적시는 용융 반도체 재료의 막 및 막에 의해 둘러싸인 자유 표면을 갖는 반도체 재료의 용해물을 형성하는 단계를 포함하고, 막 및 용해물은 유도 가열 코일의 아래쪽 중앙에서 돌출하고 웹에 의해 하단에서 전기 전도적으로 연결된 전류 운반 세그먼트에 의해 자유 표면 부근에서 가열되는 것인 입자 용해 방법.
- 제7항에 있어서, 실리콘으로 이루어진 입자가 실리콘으로 이루어진 플레이트 상에 용해되는 것인 입자 용해 방법.
- 제7항 또는 제8항에 있어서, 상기 웹 및 상기 용해물은 동일한 전위로 놓이는 것인 입자 용해 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008013326A DE102008013326B4 (de) | 2008-03-10 | 2008-03-10 | Induktionsheizspule und Verfahren zum Schmelzen von Granulat aus Halbleitermaterial |
DE102008013326.4 | 2008-03-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090097097A KR20090097097A (ko) | 2009-09-15 |
KR100999476B1 true KR100999476B1 (ko) | 2010-12-09 |
Family
ID=40952876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080138737A KR100999476B1 (ko) | 2008-03-10 | 2008-12-31 | 유도 가열 코일 및 반도체 재료로 이루어진 입자의 용해 방법 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9084296B2 (ko) |
JP (1) | JP5227854B2 (ko) |
KR (1) | KR100999476B1 (ko) |
CN (1) | CN101532171B (ko) |
DE (1) | DE102008013326B4 (ko) |
DK (1) | DK176877B1 (ko) |
SG (1) | SG155827A1 (ko) |
TW (1) | TWI398193B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101273874B1 (ko) * | 2009-10-28 | 2013-06-11 | 실트로닉 아게 | 입자의 재용융에 의해 실리콘으로 이루어진 단결정을 제조하는 장치 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009052745A1 (de) | 2009-11-11 | 2011-05-12 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat |
DE102010006724B4 (de) * | 2010-02-03 | 2012-05-16 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Silizium unter Verwendung von geschmolzenem Granulat |
WO2011128292A1 (de) * | 2010-04-13 | 2011-10-20 | Schmid Silicon Technology Gmbh | Herstellung von monokristallinen halbleiterwerkstoffen |
JP2012046381A (ja) * | 2010-08-27 | 2012-03-08 | Sumitomo Chemical Co Ltd | 樹脂被覆粒状肥料の製造方法 |
DE102014207149A1 (de) * | 2014-04-14 | 2015-10-29 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Einkristalls aus Silizium |
DE102014210936B3 (de) * | 2014-06-06 | 2015-10-22 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial |
DE102014226419A1 (de) | 2014-12-18 | 2016-06-23 | Siltronic Ag | Verfahren zum Züchten eines Einkristalls durch Kristallisieren des Einkristalls aus einer Fließzone |
CN116288650B (zh) * | 2023-05-24 | 2023-08-29 | 苏州晨晖智能设备有限公司 | 以颗粒硅为原料的硅单晶生长装置和生长方法 |
Citations (2)
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US4538279A (en) | 1982-07-16 | 1985-08-27 | Siemens Aktiengesellschaft | Induction coil in the form of a pancake coil for crucible-free zone melting |
JP2660225B2 (ja) | 1988-08-11 | 1997-10-08 | 住友シチックス株式会社 | シリコン鋳造装置 |
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US4157373A (en) * | 1972-04-26 | 1979-06-05 | Rca Corporation | Apparatus for the production of ribbon shaped crystals |
US4220839A (en) * | 1978-01-05 | 1980-09-02 | Topsil A/S | Induction heating coil for float zone melting of semiconductor rods |
DE3625669A1 (de) * | 1986-07-29 | 1988-02-04 | Siemens Ag | Induktionsheizer zum tiegelfreien zonenschmelzen |
JPS6448391A (en) * | 1987-04-27 | 1989-02-22 | Shinetsu Handotai Kk | Single winding induction heating coil used in floating zone melting method |
JP2759604B2 (ja) * | 1993-10-21 | 1998-05-28 | 信越半導体株式会社 | 誘導加熱コイル |
JP2754163B2 (ja) * | 1994-05-31 | 1998-05-20 | 信越半導体株式会社 | 高周波誘導加熱コイル |
JP3127981B2 (ja) * | 1995-01-31 | 2001-01-29 | 信越半導体株式会社 | 高周波誘導加熱装置 |
RU2191228C1 (ru) * | 2001-04-20 | 2002-10-20 | Федеральное государственное унитарное предприятие "Конструкторское бюро общего машиностроения им. В.П.Бармина" | Устройство для плавления и кристаллизации материалов |
DE10204178B4 (de) * | 2002-02-01 | 2008-01-03 | Siltronic Ag | Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Halbleitermaterial |
KR100588425B1 (ko) * | 2003-03-27 | 2006-06-12 | 실트로닉 아게 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
EP1756337B1 (en) * | 2004-06-18 | 2009-04-22 | MEMC Electronic Materials, Inc. | A melter assembly for charging a crystal forming apparatus with molten source material |
US7465351B2 (en) * | 2004-06-18 | 2008-12-16 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
US7691199B2 (en) * | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
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2008
- 2008-03-10 DE DE102008013326A patent/DE102008013326B4/de not_active Expired - Fee Related
- 2008-12-17 SG SG200809306-4A patent/SG155827A1/en unknown
- 2008-12-31 KR KR1020080138737A patent/KR100999476B1/ko active IP Right Grant
-
2009
- 2009-01-13 CN CN2009100022404A patent/CN101532171B/zh not_active Expired - Fee Related
- 2009-02-06 TW TW098103837A patent/TWI398193B/zh not_active IP Right Cessation
- 2009-02-26 US US12/393,154 patent/US9084296B2/en not_active Expired - Fee Related
- 2009-03-10 JP JP2009055941A patent/JP5227854B2/ja not_active Expired - Fee Related
- 2009-03-10 DK DKPA200900325A patent/DK176877B1/da not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4538279A (en) | 1982-07-16 | 1985-08-27 | Siemens Aktiengesellschaft | Induction coil in the form of a pancake coil for crucible-free zone melting |
JP2660225B2 (ja) | 1988-08-11 | 1997-10-08 | 住友シチックス株式会社 | シリコン鋳造装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101273874B1 (ko) * | 2009-10-28 | 2013-06-11 | 실트로닉 아게 | 입자의 재용융에 의해 실리콘으로 이루어진 단결정을 제조하는 장치 |
Also Published As
Publication number | Publication date |
---|---|
CN101532171A (zh) | 2009-09-16 |
DK176877B1 (da) | 2010-02-08 |
DE102008013326B4 (de) | 2013-03-28 |
SG155827A1 (en) | 2009-10-29 |
CN101532171B (zh) | 2012-06-27 |
TW200939891A (en) | 2009-09-16 |
TWI398193B (zh) | 2013-06-01 |
US9084296B2 (en) | 2015-07-14 |
DE102008013326A1 (de) | 2009-09-17 |
KR20090097097A (ko) | 2009-09-15 |
JP5227854B2 (ja) | 2013-07-03 |
DK200900325A (da) | 2009-09-11 |
US20090223949A1 (en) | 2009-09-10 |
JP2009215159A (ja) | 2009-09-24 |
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