DK200900325A - Induktionsvarmespole og fremgangsmåde til smeltning af granulat af halvledermateriale. - Google Patents
Induktionsvarmespole og fremgangsmåde til smeltning af granulat af halvledermateriale. Download PDFInfo
- Publication number
- DK200900325A DK200900325A DK200900325A DKPA200900325A DK200900325A DK 200900325 A DK200900325 A DK 200900325A DK 200900325 A DK200900325 A DK 200900325A DK PA200900325 A DKPA200900325 A DK PA200900325A DK 200900325 A DK200900325 A DK 200900325A
- Authority
- DK
- Denmark
- Prior art keywords
- coil
- induction heating
- semiconductor material
- segments
- heating coil
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/001—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/36—Coil arrangements
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Induction Heating (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Claims (9)
1. Induktionsvarmespole til smeltning af granulat af halvledermateriale på en tallerken med et udløbsrør, omfattende en med strømførespalte forsynet spole med en overside og en underside og med en gennemstrømningsåbning til granulat i et område liggende uden for spolens midtpunkt og strømførende segmenter, som fremstår i midtpunktet af spolens underside, og som via et forbindelsesstykke er elektrisk ledende forbundet på en nedre ende.
2. Induktionsvarmespole ifølge krav 1, kendetegnet ved, at i det mindste én af strømførespalterne er udvidet for at danne gennemstrømningsåbningen.
3. Induktionsvarmespole ifølge krav 1 eller krav 2, kendetegnet ved, at segmenterne danner en form som en keglestub.
4. Induktionsvarmespole ifølge et af kravene 1 til 3, kendetegnet ved, at hældningsvinklen på de strømførende segmenters udvendige flade og hældningsvinklen for udløbsrørets indvendige flade erens.
5. Induktionsvarmespole ifølge et af kravene 1 til 4, kendetegnet ved et kølesystem til køling af spolen og segmenterne,
6. Induktionsvarmespole ifølge krav 5, kendetegnet ved, at kølesystemet omfatter en rørbro, gennemstrømmet og omgivet af kølemiddel, som i midtpunktet af spolens overside er i kontakt med de strømførende segmenter.
7. Fremgangsmåde til smeltning af granulat af halvledermateriale på en tallerken med et udløbsrør ved hjælp af en induktionsvarmespole, omfattende dannelsen afen film af smeltet halvledermateriale, som fugter udløbsrøret, og en smeltemasse af halvledermateriale med en fri overflade, som er omgivet af filmen, kendetegnet ved, at filmen og smeltemassen opvarmes på den frie overflade ved hjælp af strømførende segmenter, der fremstår i midtpunktet for induktionsvarmespolens underside, og som via et forbindelsesstykke er elektrisk ledende forbundet på en nedre ende.
8. Fremgangsmåde ifølge krav 7, kendetegnet ved, at granulat af silicium smeltes på en tallerken af silicium.
9. Fremgangsmåde ifølge krav 6 eller krav 7, kendetegnet ved, at forbindelsesstykket og smeltemassen lægges på det samme elektriske potentiale.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008013326 | 2008-03-10 | ||
| DE102008013326A DE102008013326B4 (de) | 2008-03-10 | 2008-03-10 | Induktionsheizspule und Verfahren zum Schmelzen von Granulat aus Halbleitermaterial |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DK200900325A true DK200900325A (da) | 2009-09-11 |
| DK176877B1 DK176877B1 (da) | 2010-02-08 |
Family
ID=40952876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DKPA200900325A DK176877B1 (da) | 2008-03-10 | 2009-03-10 | Induktionsvarmespole og fremgangsmåde til smeltning af granulat af halvledermateriale. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9084296B2 (da) |
| JP (1) | JP5227854B2 (da) |
| KR (1) | KR100999476B1 (da) |
| CN (1) | CN101532171B (da) |
| DE (1) | DE102008013326B4 (da) |
| DK (1) | DK176877B1 (da) |
| SG (1) | SG155827A1 (da) |
| TW (1) | TWI398193B (da) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009051010B4 (de) * | 2009-10-28 | 2012-02-23 | Siltronic Ag | Vorrichtung zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat |
| DE102009052745A1 (de) | 2009-11-11 | 2011-05-12 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat |
| DE102010006724B4 (de) * | 2010-02-03 | 2012-05-16 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Silizium unter Verwendung von geschmolzenem Granulat |
| WO2011128292A1 (de) * | 2010-04-13 | 2011-10-20 | Schmid Silicon Technology Gmbh | Herstellung von monokristallinen halbleiterwerkstoffen |
| JP2012046381A (ja) * | 2010-08-27 | 2012-03-08 | Sumitomo Chemical Co Ltd | 樹脂被覆粒状肥料の製造方法 |
| DE102014207149A1 (de) * | 2014-04-14 | 2015-10-29 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Einkristalls aus Silizium |
| DE102014210936B3 (de) * | 2014-06-06 | 2015-10-22 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial |
| DE102014226419A1 (de) | 2014-12-18 | 2016-06-23 | Siltronic Ag | Verfahren zum Züchten eines Einkristalls durch Kristallisieren des Einkristalls aus einer Fließzone |
| CN116288650B (zh) * | 2023-05-24 | 2023-08-29 | 苏州晨晖智能设备有限公司 | 以颗粒硅为原料的硅单晶生长装置和生长方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4157373A (en) * | 1972-04-26 | 1979-06-05 | Rca Corporation | Apparatus for the production of ribbon shaped crystals |
| US4220839A (en) * | 1978-01-05 | 1980-09-02 | Topsil A/S | Induction heating coil for float zone melting of semiconductor rods |
| DE3226713A1 (de) | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Als flachspule ausgebildete induktionsheizspule zum tiegelfreien zonenschmelzen |
| DE3625669A1 (de) * | 1986-07-29 | 1988-02-04 | Siemens Ag | Induktionsheizer zum tiegelfreien zonenschmelzen |
| JPS6448391A (en) * | 1987-04-27 | 1989-02-22 | Shinetsu Handotai Kk | Single winding induction heating coil used in floating zone melting method |
| JP2660225B2 (ja) | 1988-08-11 | 1997-10-08 | 住友シチックス株式会社 | シリコン鋳造装置 |
| JP2759604B2 (ja) * | 1993-10-21 | 1998-05-28 | 信越半導体株式会社 | 誘導加熱コイル |
| JP2754163B2 (ja) * | 1994-05-31 | 1998-05-20 | 信越半導体株式会社 | 高周波誘導加熱コイル |
| JP3127981B2 (ja) * | 1995-01-31 | 2001-01-29 | 信越半導体株式会社 | 高周波誘導加熱装置 |
| RU2191228C1 (ru) * | 2001-04-20 | 2002-10-20 | Федеральное государственное унитарное предприятие "Конструкторское бюро общего машиностроения им. В.П.Бармина" | Устройство для плавления и кристаллизации материалов |
| DE10204178B4 (de) * | 2002-02-01 | 2008-01-03 | Siltronic Ag | Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Halbleitermaterial |
| KR100588425B1 (ko) * | 2003-03-27 | 2006-06-12 | 실트로닉 아게 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
| EP1756337B1 (en) * | 2004-06-18 | 2009-04-22 | MEMC Electronic Materials, Inc. | A melter assembly for charging a crystal forming apparatus with molten source material |
| US7465351B2 (en) * | 2004-06-18 | 2008-12-16 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7691199B2 (en) * | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
-
2008
- 2008-03-10 DE DE102008013326A patent/DE102008013326B4/de not_active Expired - Fee Related
- 2008-12-17 SG SG200809306-4A patent/SG155827A1/en unknown
- 2008-12-31 KR KR1020080138737A patent/KR100999476B1/ko active IP Right Grant
-
2009
- 2009-01-13 CN CN2009100022404A patent/CN101532171B/zh not_active Expired - Fee Related
- 2009-02-06 TW TW098103837A patent/TWI398193B/zh not_active IP Right Cessation
- 2009-02-26 US US12/393,154 patent/US9084296B2/en not_active Expired - Fee Related
- 2009-03-10 JP JP2009055941A patent/JP5227854B2/ja not_active Expired - Fee Related
- 2009-03-10 DK DKPA200900325A patent/DK176877B1/da not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN101532171A (zh) | 2009-09-16 |
| DK176877B1 (da) | 2010-02-08 |
| DE102008013326B4 (de) | 2013-03-28 |
| SG155827A1 (en) | 2009-10-29 |
| CN101532171B (zh) | 2012-06-27 |
| TW200939891A (en) | 2009-09-16 |
| TWI398193B (zh) | 2013-06-01 |
| US9084296B2 (en) | 2015-07-14 |
| DE102008013326A1 (de) | 2009-09-17 |
| KR20090097097A (ko) | 2009-09-15 |
| JP5227854B2 (ja) | 2013-07-03 |
| KR100999476B1 (ko) | 2010-12-09 |
| US20090223949A1 (en) | 2009-09-10 |
| JP2009215159A (ja) | 2009-09-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PBP | Patent lapsed |
Effective date: 20210310 |