SG127810A1 - Method and process for reactive gas cleaning of tool parts - Google Patents
Method and process for reactive gas cleaning of tool partsInfo
- Publication number
- SG127810A1 SG127810A1 SG200603146A SG200603146A SG127810A1 SG 127810 A1 SG127810 A1 SG 127810A1 SG 200603146 A SG200603146 A SG 200603146A SG 200603146 A SG200603146 A SG 200603146A SG 127810 A1 SG127810 A1 SG 127810A1
- Authority
- SG
- Singapore
- Prior art keywords
- line
- reactive gas
- tool parts
- contaminated
- parts
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning In General (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/130,307 US20060254613A1 (en) | 2005-05-16 | 2005-05-16 | Method and process for reactive gas cleaning of tool parts |
Publications (1)
Publication Number | Publication Date |
---|---|
SG127810A1 true SG127810A1 (en) | 2006-12-29 |
Family
ID=37012079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200603146A SG127810A1 (en) | 2005-05-16 | 2006-05-10 | Method and process for reactive gas cleaning of tool parts |
Country Status (7)
Country | Link |
---|---|
US (1) | US20060254613A1 (ko) |
EP (1) | EP1724374A1 (ko) |
JP (1) | JP2006324663A (ko) |
KR (1) | KR100786609B1 (ko) |
CN (1) | CN1891858A (ko) |
SG (1) | SG127810A1 (ko) |
TW (1) | TW200710972A (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080268281A1 (en) * | 2007-04-27 | 2008-10-30 | Quan Bai | Shield Components With Enhanced Thermal and Mechanical Stability |
KR20100071961A (ko) * | 2007-09-19 | 2010-06-29 | 가부시키가이샤 히다치 고쿠사이 덴키 | 클리닝 방법 및 기판 처리 장치 |
US8404135B2 (en) * | 2008-08-26 | 2013-03-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Plasma cleaning for process chamber component refurbishment |
KR101630234B1 (ko) * | 2009-11-17 | 2016-06-15 | 주성엔지니어링(주) | 공정챔버의 세정방법 |
JP6422262B2 (ja) * | 2013-10-24 | 2018-11-14 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
WO2017123423A1 (en) * | 2016-01-13 | 2017-07-20 | Applied Materials, Inc. | Hydrogen plasma based cleaning process for etch hardware |
JP7166950B2 (ja) | 2019-02-07 | 2022-11-08 | キオクシア株式会社 | 半導体製造装置および半導体装置の製造方法 |
KR102336559B1 (ko) * | 2019-11-26 | 2021-12-08 | 세메스 주식회사 | 부품 표면 처리 방법 및 부품 처리 장치 |
JP7205455B2 (ja) * | 2019-12-19 | 2023-01-17 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
JP7118099B2 (ja) * | 2020-01-15 | 2022-08-15 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5043299B1 (en) * | 1989-12-01 | 1997-02-25 | Applied Materials Inc | Process for selective deposition of tungsten on semiconductor wafer |
US5391275A (en) * | 1990-03-02 | 1995-02-21 | Applied Materials, Inc. | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
US5421957A (en) * | 1993-07-30 | 1995-06-06 | Applied Materials, Inc. | Low temperature etching in cold-wall CVD systems |
US5900103A (en) * | 1994-04-20 | 1999-05-04 | Tokyo Electron Limited | Plasma treatment method and apparatus |
JP3909608B2 (ja) * | 1994-09-30 | 2007-04-25 | 株式会社アルバック | 真空処理装置 |
US6274058B1 (en) * | 1997-07-11 | 2001-08-14 | Applied Materials, Inc. | Remote plasma cleaning method for processing chambers |
US6067999A (en) * | 1998-04-23 | 2000-05-30 | International Business Machines Corporation | Method for deposition tool cleaning |
US6230895B1 (en) * | 1999-08-20 | 2001-05-15 | David P. Laube | Container for transporting refurbished semiconductor processing equipment |
US6569257B1 (en) * | 2000-11-09 | 2003-05-27 | Applied Materials Inc. | Method for cleaning a process chamber |
US20020132488A1 (en) * | 2001-01-12 | 2002-09-19 | Applied Materials, Inc. | Method of etching tantalum |
US6818566B2 (en) * | 2002-10-18 | 2004-11-16 | The Boc Group, Inc. | Thermal activation of fluorine for use in a semiconductor chamber |
-
2005
- 2005-05-16 US US11/130,307 patent/US20060254613A1/en not_active Abandoned
-
2006
- 2006-05-09 EP EP06009536A patent/EP1724374A1/en not_active Ceased
- 2006-05-10 SG SG200603146A patent/SG127810A1/en unknown
- 2006-05-11 TW TW095116794A patent/TW200710972A/zh unknown
- 2006-05-15 JP JP2006135329A patent/JP2006324663A/ja active Pending
- 2006-05-15 KR KR1020060043494A patent/KR100786609B1/ko not_active IP Right Cessation
- 2006-05-16 CN CNA2006100886535A patent/CN1891858A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1724374A1 (en) | 2006-11-22 |
KR100786609B1 (ko) | 2007-12-21 |
US20060254613A1 (en) | 2006-11-16 |
TW200710972A (en) | 2007-03-16 |
KR20060118357A (ko) | 2006-11-23 |
CN1891858A (zh) | 2007-01-10 |
JP2006324663A (ja) | 2006-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200710972A (en) | Method and process for reactive gas cleaning of tool parts | |
TW200705116A (en) | Method of cleaning optical surfaces of an irradiation unit in a two-step process | |
TW200711757A (en) | Method for removing surface deposits and passivating interior surfaces of the interior of a chemical vapor deposition reactor | |
TW200732522A (en) | Fabrication method and fabrication apparatus of group III nitride crystal substance | |
TW200604390A (en) | Film formation apparatus and method of cleaning such a film formation apparatus | |
WO2005114715A8 (en) | Method for cleaning substrate surface | |
TW200641998A (en) | Formation of silicon nitride film | |
TW200737320A (en) | Apparatus and methods for treating substrates | |
TW200604369A (en) | Method for removing carbon-containing residues from a substrate | |
WO2010047953A3 (en) | A remote plasma clean process with cycled high and low pressure clean steps | |
WO2005081289A3 (en) | Process and apparatus for removing residues from semiconductor substrates | |
TW200718802A (en) | Method of using NF3 for removing surface deposits | |
TW200703495A (en) | Method and apparatus for cleaning substrate | |
WO2008105255A1 (ja) | プラズマ処理装置のクリーニング方法、そのクリーニング方法を実行するプラズマ処理装置およびそのクリーニング方法を実行するプログラムを記憶する記憶媒体 | |
TW200737286A (en) | Reclaming substrates having defects and contaminants | |
WO2011109266A3 (en) | Method and apparatus for single step selective nitridation | |
SG143125A1 (en) | Chromium-free etching solution for si-substrates and sige-substrates, method for revealing defects using the etching solution and process for treating si-substrates and sige-substrates using the etching solution | |
TW200725788A (en) | Method and apparatus to support a cleanspace fabricator | |
TW200717628A (en) | Wafer edge cleaning process | |
TW200715386A (en) | Method for removing organic electroluminescent residues from a substrate | |
WO2007070116A3 (en) | Remote chamber method using sulfur fluoride for removing surface deposits from the interior of a cvd /pecvd- plasma chamber | |
TW200501255A (en) | Method for removal of residue from a substrate | |
EP1696476A3 (en) | Method of surface processing substrate, method of cleaning substrate, and programs for implementing the methods | |
TW200737325A (en) | Film formation apparatus and method of using the same | |
TW200744130A (en) | Cleaning method of apparatus for depositing metal containing film |