SG11202010537VA - Mask blank, phase shift mask, and method of manufacturing semiconductor device - Google Patents

Mask blank, phase shift mask, and method of manufacturing semiconductor device

Info

Publication number
SG11202010537VA
SG11202010537VA SG11202010537VA SG11202010537VA SG11202010537VA SG 11202010537V A SG11202010537V A SG 11202010537VA SG 11202010537V A SG11202010537V A SG 11202010537VA SG 11202010537V A SG11202010537V A SG 11202010537VA SG 11202010537V A SG11202010537V A SG 11202010537VA
Authority
SG
Singapore
Prior art keywords
mask
semiconductor device
phase shift
manufacturing semiconductor
mask blank
Prior art date
Application number
SG11202010537VA
Inventor
Hiroaki Shishido
Hitoshi Maeda
Masahiro Hashimoto
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202010537VA publication Critical patent/SG11202010537VA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Element Separation (AREA)
SG11202010537VA 2018-05-30 2019-05-08 Mask blank, phase shift mask, and method of manufacturing semiconductor device SG11202010537VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018103475A JP6938428B2 (en) 2018-05-30 2018-05-30 Manufacturing method of mask blank, phase shift mask and semiconductor device
PCT/JP2019/018386 WO2019230312A1 (en) 2018-05-30 2019-05-08 Mask blank, phase-shift mask, and semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
SG11202010537VA true SG11202010537VA (en) 2020-11-27

Family

ID=68697965

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202010537VA SG11202010537VA (en) 2018-05-30 2019-05-08 Mask blank, phase shift mask, and method of manufacturing semiconductor device

Country Status (7)

Country Link
US (1) US20210132488A1 (en)
JP (1) JP6938428B2 (en)
KR (1) KR20210014100A (en)
CN (1) CN112166376A (en)
SG (1) SG11202010537VA (en)
TW (1) TWI791837B (en)
WO (1) WO2019230312A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230194973A1 (en) * 2020-06-30 2023-06-22 Hoya Corporation Mask blank, phase shift mask, method of manufacturing phase shift mask, and method of manufacturing semiconductor device
JP2022091338A (en) * 2020-12-09 2022-06-21 Hoya株式会社 Mask blank, phase shift mask, and method for producing semiconductor device

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3262302B2 (en) * 1993-04-09 2002-03-04 大日本印刷株式会社 Phase shift photomask, blank for phase shift photomask, and method of manufacturing the same
KR0168134B1 (en) * 1993-05-25 1999-01-15 사토 후미오 Reflection type phase shifting mask, transmittance type phase shifting mask and the method for forming pattern
JP2001201842A (en) * 1999-11-09 2001-07-27 Ulvac Seimaku Kk Phase shift photomask blank, phase shift photomask, and manufacturing method of semiconductor device
JP2002258458A (en) * 2000-12-26 2002-09-11 Hoya Corp Halftone phase shift mask and mask blank
US20020197509A1 (en) * 2001-04-19 2002-12-26 Carcia Peter Francis Ion-beam deposition process for manufacturing multi-layered attenuated phase shift photomask blanks
US7011910B2 (en) * 2002-04-26 2006-03-14 Hoya Corporation Halftone-type phase-shift mask blank, and halftone-type phase-shift mask
JP2005156700A (en) * 2003-11-21 2005-06-16 Shin Etsu Chem Co Ltd Phase shift mask blank, phase shift mask, method for manufacturing phase shift mask blank, and method for transferring pattern
KR20100009558A (en) 2007-04-27 2010-01-27 호야 가부시키가이샤 Photomask blank and photomask
JP5257256B2 (en) * 2009-06-11 2013-08-07 信越化学工業株式会社 Photomask manufacturing method
JP5714266B2 (en) * 2009-08-25 2015-05-07 Hoya株式会社 Mask blank, transfer mask, and manufacturing method thereof
NL2007303A (en) 2010-09-23 2012-03-26 Asml Netherlands Bv Process tuning with polarization.
US9625806B2 (en) * 2013-01-15 2017-04-18 Hoya Corporation Mask blank, phase-shift mask, and method for manufacturing the same
JP6005530B2 (en) * 2013-01-15 2016-10-12 Hoya株式会社 Mask blank, phase shift mask and manufacturing method thereof
JP6373607B2 (en) * 2013-03-08 2018-08-15 Hoya株式会社 Manufacturing method of mask blank and manufacturing method of phase shift mask
JP6153894B2 (en) * 2014-07-11 2017-06-28 Hoya株式会社 Mask blank, phase shift mask, phase shift mask manufacturing method, and semiconductor device manufacturing method
KR102261621B1 (en) * 2014-12-26 2021-06-04 호야 가부시키가이샤 Mask blank, phase-shift mask, method for manufacturing phase-shift mask and method for manufacturing semiconductor device
JP6418035B2 (en) * 2015-03-31 2018-11-07 信越化学工業株式会社 Phase shift mask blanks and phase shift masks
JP6352224B2 (en) * 2015-07-17 2018-07-04 Hoya株式会社 Phase shift mask blank, method of manufacturing phase shift mask using the same, and method of manufacturing display device
US11226549B2 (en) * 2015-08-31 2022-01-18 Hoya Corporation Mask blank, phase shift mask, method for manufacturing thereof, and method for manufacturing semiconductor device
TWI720752B (en) * 2015-09-30 2021-03-01 日商Ｈｏｙａ股份有限公司 Blank mask, phase shift conversion mask and manufacturing method of semiconductor element
SG10201908855RA (en) * 2015-11-06 2019-10-30 Hoya Corp Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
JP6302520B2 (en) * 2016-09-07 2018-03-28 Hoya株式会社 Mask blank, phase shift mask manufacturing method, and semiconductor device manufacturing method

Also Published As

Publication number Publication date
US20210132488A1 (en) 2021-05-06
JP2019207359A (en) 2019-12-05
KR20210014100A (en) 2021-02-08
JP6938428B2 (en) 2021-09-22
TW202004328A (en) 2020-01-16
TWI791837B (en) 2023-02-11
WO2019230312A1 (en) 2019-12-05
CN112166376A (en) 2021-01-01

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