SG10202007863UA - Mask blank, transfer mask, and method of manufacturing semiconductor device - Google Patents

Mask blank, transfer mask, and method of manufacturing semiconductor device

Info

Publication number
SG10202007863UA
SG10202007863UA SG10202007863UA SG10202007863UA SG10202007863UA SG 10202007863U A SG10202007863U A SG 10202007863UA SG 10202007863U A SG10202007863U A SG 10202007863UA SG 10202007863U A SG10202007863U A SG 10202007863UA SG 10202007863U A SG10202007863U A SG 10202007863UA
Authority
SG
Singapore
Prior art keywords
mask
semiconductor device
manufacturing semiconductor
transfer
mask blank
Prior art date
Application number
SG10202007863UA
Inventor
Hiroaki Shishido
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG10202007863UA publication Critical patent/SG10202007863UA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG10202007863UA 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device SG10202007863UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016165550 2016-08-26

Publications (1)

Publication Number Publication Date
SG10202007863UA true SG10202007863UA (en) 2020-10-29

Family

ID=61246640

Family Applications (3)

Application Number Title Priority Date Filing Date
SG10202007863UA SG10202007863UA (en) 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device
SG10202000604QA SG10202000604QA (en) 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device
SG11201901299SA SG11201901299SA (en) 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device

Family Applications After (2)

Application Number Title Priority Date Filing Date
SG10202000604QA SG10202000604QA (en) 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device
SG11201901299SA SG11201901299SA (en) 2016-08-26 2017-08-02 Mask blank, transfer mask, and method of manufacturing semiconductor device

Country Status (7)

Country Link
US (3) US11112690B2 (en)
JP (3) JP6297766B1 (en)
KR (3) KR102254035B1 (en)
CN (3) CN109643058B (en)
SG (3) SG10202007863UA (en)
TW (3) TWI685880B (en)
WO (1) WO2018037863A1 (en)

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SG10202007863UA (en) * 2016-08-26 2020-10-29 Hoya Corp Mask blank, transfer mask, and method of manufacturing semiconductor device
JP6932552B2 (en) * 2017-05-31 2021-09-08 Hoya株式会社 Mask blank, transfer mask manufacturing method and semiconductor device manufacturing method
JP2020013100A (en) * 2018-07-13 2020-01-23 エスアンドエス テック カンパニー リミテッド Blank mask, photomask and method for manufacturing the same
KR20200055871A (en) * 2018-11-13 2020-05-22 삼성디스플레이 주식회사 Substrate etching method
JP7331793B2 (en) * 2020-06-30 2023-08-23 信越化学工業株式会社 Photomask manufacturing method and photomask blank
KR102624206B1 (en) * 2021-02-25 2024-01-15 인하대학교 산학협력단 Method and Apparatus for manufacturing Light-Shielding Layer for ArF Phase Shift Blank Mask
TWI814573B (en) * 2022-09-07 2023-09-01 致伸科技股份有限公司 Keyboard device with light adjusting structure

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SG10202007863UA (en) * 2016-08-26 2020-10-29 Hoya Corp Mask blank, transfer mask, and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
CN114675486A (en) 2022-06-28
CN114609856A (en) 2022-06-10
KR102281354B1 (en) 2021-07-26
KR102254035B1 (en) 2021-05-20
WO2018037863A1 (en) 2018-03-01
US20190204728A1 (en) 2019-07-04
JP6495496B2 (en) 2019-04-03
KR20210059016A (en) 2021-05-24
TW201820405A (en) 2018-06-01
JP2018109775A (en) 2018-07-12
TWI685880B (en) 2020-02-21
KR102292434B1 (en) 2021-08-20
TWI765636B (en) 2022-05-21
CN109643058B (en) 2022-03-29
KR20190021454A (en) 2019-03-05
JP6297766B1 (en) 2018-03-20
TW202129707A (en) 2021-08-01
JP6636664B2 (en) 2020-01-29
US20210373432A1 (en) 2021-12-02
US11543744B2 (en) 2023-01-03
JPWO2018037863A1 (en) 2018-08-23
TW202020938A (en) 2020-06-01
SG10202000604QA (en) 2020-03-30
SG11201901299SA (en) 2019-03-28
CN109643058A (en) 2019-04-16
JP2019105858A (en) 2019-06-27
KR20210093383A (en) 2021-07-27
US11112690B2 (en) 2021-09-07
US20230099176A1 (en) 2023-03-30
TWI727603B (en) 2021-05-11

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