SG11202002928WA - Mask blank, phase shift mask, and method of manufacturing semiconductor device - Google Patents

Mask blank, phase shift mask, and method of manufacturing semiconductor device

Info

Publication number
SG11202002928WA
SG11202002928WA SG11202002928WA SG11202002928WA SG11202002928WA SG 11202002928W A SG11202002928W A SG 11202002928WA SG 11202002928W A SG11202002928W A SG 11202002928WA SG 11202002928W A SG11202002928W A SG 11202002928WA SG 11202002928W A SG11202002928W A SG 11202002928WA
Authority
SG
Singapore
Prior art keywords
mask
semiconductor device
phase shift
manufacturing semiconductor
mask blank
Prior art date
Application number
SG11202002928WA
Inventor
Osamu Nozawa
Yasutaka Horigome
Hitoshi Maeda
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202002928WA publication Critical patent/SG11202002928WA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
SG11202002928WA 2017-11-24 2018-11-20 Mask blank, phase shift mask, and method of manufacturing semiconductor device SG11202002928WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017225528 2017-11-24
PCT/JP2018/042813 WO2019102990A1 (en) 2017-11-24 2018-11-20 Mask blank, phase shift mask, and method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
SG11202002928WA true SG11202002928WA (en) 2020-04-29

Family

ID=66631994

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202002928WA SG11202002928WA (en) 2017-11-24 2018-11-20 Mask blank, phase shift mask, and method of manufacturing semiconductor device

Country Status (7)

Country Link
US (1) US11333966B2 (en)
JP (2) JP6526938B1 (en)
KR (1) KR102427106B1 (en)
CN (1) CN111344633B (en)
SG (1) SG11202002928WA (en)
TW (1) TWI768153B (en)
WO (1) WO2019102990A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7184558B2 (en) * 2018-07-30 2022-12-06 株式会社トッパンフォトマスク Phase shift mask blank, phase shift mask, and method for manufacturing phase shift mask
JP2021067908A (en) * 2019-10-28 2021-04-30 Hoya株式会社 Mask blank, transfer mask, and method for manufacturing semiconductor device
WO2021236359A1 (en) * 2020-05-19 2021-11-25 Tokyo Electron Limited Systems and methods for selective ion mass segregation in pulsed plasma atomic layer etching
US20220163881A1 (en) * 2020-11-20 2022-05-26 Entegris, Inc. Phase-shift reticle for use in photolithography

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0168134B1 (en) 1993-05-25 1999-01-15 사토 후미오 Reflection type phase shifting mask, transmittance type phase shifting mask and the method for forming pattern
JP3115185B2 (en) * 1993-05-25 2000-12-04 株式会社東芝 Exposure mask and pattern forming method
JP2001201842A (en) * 1999-11-09 2001-07-27 Ulvac Seimaku Kk Phase shift photomask blank, phase shift photomask, and manufacturing method of semiconductor device
JP5215421B2 (en) 1999-11-09 2013-06-19 アルバック成膜株式会社 Phase shift photomask blank, phase shift photomask, and semiconductor device manufacturing method
US7060394B2 (en) * 2001-03-30 2006-06-13 Hoya Corporation Halftone phase-shift mask blank and halftone phase-shift mask
US6844119B2 (en) 2002-07-30 2005-01-18 Hoya Corporation Method for producing a halftone phase shift mask blank, a halftone phase shift mask blank and halftone phase shift mask
US8796053B2 (en) * 2010-12-21 2014-08-05 Ultratech, Inc. Photolithographic LED fabrication using phase-shift mask
JP6185721B2 (en) 2013-01-29 2017-08-23 Hoya株式会社 Mask blank, mask blank manufacturing method, transfer mask manufacturing method, and semiconductor device manufacturing method
JP6101646B2 (en) * 2013-02-26 2017-03-22 Hoya株式会社 Phase shift mask blank and manufacturing method thereof, phase shift mask and manufacturing method thereof, and display device manufacturing method
JP6264238B2 (en) 2013-11-06 2018-01-24 信越化学工業株式会社 Halftone phase shift photomask blank, halftone phase shift photomask, and pattern exposure method
US9454073B2 (en) 2014-02-10 2016-09-27 SK Hynix Inc. Photomask blank and photomask for suppressing heat absorption
JP6153894B2 (en) * 2014-07-11 2017-06-28 Hoya株式会社 Mask blank, phase shift mask, phase shift mask manufacturing method, and semiconductor device manufacturing method
JP6380204B2 (en) 2015-03-31 2018-08-29 信越化学工業株式会社 Halftone phase shift mask blank, halftone phase shift mask and pattern exposure method
JP6341129B2 (en) * 2015-03-31 2018-06-13 信越化学工業株式会社 Halftone phase shift mask blank and halftone phase shift mask
JP6087401B2 (en) 2015-08-14 2017-03-01 Hoya株式会社 Mask blank, phase shift mask, and semiconductor device manufacturing method
JP6271780B2 (en) * 2017-02-01 2018-01-31 Hoya株式会社 Mask blank, phase shift mask, and semiconductor device manufacturing method
JP6321265B2 (en) * 2017-05-29 2018-05-09 Hoya株式会社 Mask blank, phase shift mask, phase shift mask manufacturing method, and semiconductor device manufacturing method

Also Published As

Publication number Publication date
TW201932972A (en) 2019-08-16
JPWO2019102990A1 (en) 2019-11-21
KR102427106B1 (en) 2022-08-01
TWI768153B (en) 2022-06-21
CN111344633B (en) 2023-02-03
US11333966B2 (en) 2022-05-17
US20210364909A1 (en) 2021-11-25
WO2019102990A1 (en) 2019-05-31
JP6526938B1 (en) 2019-06-05
CN111344633A (en) 2020-06-26
JP7106492B2 (en) 2022-07-26
KR20200087145A (en) 2020-07-20
JP2019144587A (en) 2019-08-29

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