SG11201901142UA - Chalcogenide film, device including, and method of forming the same - Google Patents

Chalcogenide film, device including, and method of forming the same

Info

Publication number
SG11201901142UA
SG11201901142UA SG11201901142UA SG11201901142UA SG11201901142UA SG 11201901142U A SG11201901142U A SG 11201901142UA SG 11201901142U A SG11201901142U A SG 11201901142UA SG 11201901142U A SG11201901142U A SG 11201901142UA SG 11201901142U A SG11201901142U A SG 11201901142UA
Authority
SG
Singapore
Prior art keywords
nanyang
singapore
international
chalcogenide film
chalcogenide
Prior art date
Application number
SG11201901142UA
Inventor
Xuechao Yu
Peng Yu
Qijie Wang
Zheng Liu
Original Assignee
Univ Nanyang Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nanyang Tech filed Critical Univ Nanyang Tech
Publication of SG11201901142UA publication Critical patent/SG11201901142UA/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0005—Separation of the coating from the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0272—Selenium or tellurium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 111111111111111111111111111111111111111111111111111111111111111111111111110111111 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\" WO 2018/044237 Al 08 March 2018 (08.03.2018) W I P0 I P C T — (51) (21) International Application Number: (22) International Filing Date: (25) Filing Language: (26) Publication Language: (30) (71) Applicant: (72) International Patent Classification: (74) Agent: VIERING, JENTSCHURA & PARTNER LLP; H01L 31/0264 (2006.01) C23C 16/30 (2006.01) P.O Box 1088, Rochor Post Office, Rochor Road, Singapore 911833 (SG). PCT/SG2017/050434 (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, 31 August 2017 (31.08.2017) AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, English DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, English HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, Priority Data: MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, 10201607347V 02 September 2016 (02.09.2016) SG OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, NANYANG TECHNOLOGICAL TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. UNIVERSITY [SG/SG]; 50 Nanyang Avenue, Singapore 639798 (SG). (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, Inventors: YU, Xuechao; c/o Nanyang Technological Uni- GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, versity, 50 Nanyang Avenue, Singapore 639798 (SG). UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, YU, Peng; c/o Nanyang Technological University, 50 TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, Nanyang Avenue, Singapore 639798 (SG). WANG, Qijie; EE, ES, FL FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, c/o Nanyang Technological University, 50 Nanyang Av- MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, enue, Singapore 639798 (SG). LIU, Zheng; c/o Nanyang TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, Technological University, 50 Nanyang Avenue, Singapore KM, ML, MR, NE, SN, TD, TG). 639798 (SG). - = — = = (54) Title: CHALCOGENIDE FILM, DEVICE INCLUDING, AND METHOD OF FORMING THE SAME FIG. 16A Layer -;‘ dependence '; • I.,. ‘ : , \ -s ,,, , , * 4iN ,,, v.,. , \$.. ,•:„\ .. ... 4 = = = = — _ = = , — , 4• ..,,I,',. 1 / 4 „...... , .4. „ ‘;',z,%,,,,, , , , \ a ,lw • \.,.•*.. .\4‘ , , a, vk.e. , ,,,. , :vw ',... v. • , .•.A .,, 4.:W Layer Layer dependence' '' ''•.' ' dependence = — = — = Mono'ayer B ayer In layer Defect Defect induced induced : The invention relates to a chalcogenide film comprising a noble metal chalcogenide material having a formula MCx. may represent a noble metal, C may represent a chalcogen, x may be any one positive value equal to or more than 1.4 and less than The chalcogenide film may be configured to generate electrons and holes upon light incident on the chalcogenide film. A method producing a chalcogenide fil m with increased vacancy or defect is provided, wherein increasing vacancies or defects may lead to in bandgap and enhance absorption at wavelength range such as mid-infrared. Said chalcogenide film is used in a device photodetector or a solar cell. *1: decrease c;;;;) including 1-1 IN en \" (57) ll• M I I' 2. 0 -----, of 1-1 ei O [Continued on next page] WO 2018/044237 Al MIDEDIMOMMIDIRMENNHOEHMENHHEEM# Published: — with international search report (Art. 21(3))
SG11201901142UA 2016-09-02 2017-08-31 Chalcogenide film, device including, and method of forming the same SG11201901142UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG10201607347V 2016-09-02
PCT/SG2017/050434 WO2018044237A1 (en) 2016-09-02 2017-08-31 Chalcogenide film, device including, and method of forming the same

Publications (1)

Publication Number Publication Date
SG11201901142UA true SG11201901142UA (en) 2019-03-28

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Family Applications (1)

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Country Status (4)

Country Link
US (1) US10900115B2 (en)
CN (1) CN109891601B (en)
SG (1) SG11201901142UA (en)
WO (1) WO2018044237A1 (en)

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US10727230B2 (en) 2017-11-30 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated semiconductor device with 2D material layer
CN109449225A (en) * 2018-10-29 2019-03-08 合肥工业大学 Two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector and preparation method thereof
CN109461789B (en) * 2018-11-12 2020-09-11 郑州大学 Self-driven heterojunction type infrared photoelectric detector based on two-dimensional palladium diselenide nano film and germanium and preparation method thereof
SG11202105439QA (en) * 2018-12-18 2021-06-29 Agency Science Tech & Res Devices comprising multiple two-dimensional transition metal dichalcogenide materials
CN109916516A (en) * 2019-03-29 2019-06-21 郑州大学 A kind of application of two-dimentional two selenizings palladium nano thin-film in the detection of broadband polarized light signal
CN110212025A (en) * 2019-05-17 2019-09-06 中国科学院上海技术物理研究所 A kind of field-effect tube array and preparation method based on two selenizing platinum semiconductors
CN110581187B (en) * 2019-09-26 2021-06-01 中国科学院长春光学精密机械与物理研究所 Sub-band flexible optical detector based on ink-jet printing technology and printing method
CN111682111B (en) * 2020-05-20 2022-03-29 华南理工大学 PBDB-T ITIC alpha-In2Se3Organic solar cell as active layer and method for manufacturing the same
CN112316964B (en) * 2020-09-25 2023-08-08 河南师范大学 Preparation method of hollow spherical N-P co-doped vanadium selenide nano electro-catalyst
CN114335209B (en) * 2021-12-08 2024-03-26 华南师范大学 Polarization sensitive photoelectric detector and preparation method thereof
CN114284385B (en) * 2021-12-27 2024-01-30 杭州电子科技大学 Preparation method of cuprous sulfide-silver sulfide pn junction photoelectric detector
CN114975654A (en) * 2022-03-17 2022-08-30 西北工业大学 Photoelectric detector based on chemical vapor deposition tungsten disulfide and preparation method thereof

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Also Published As

Publication number Publication date
CN109891601B (en) 2023-05-02
WO2018044237A1 (en) 2018-03-08
US10900115B2 (en) 2021-01-26
US20190194797A1 (en) 2019-06-27
CN109891601A (en) 2019-06-14

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