SG11201808608UA - Projection exposure apparatus and method - Google Patents
Projection exposure apparatus and methodInfo
- Publication number
- SG11201808608UA SG11201808608UA SG11201808608UA SG11201808608UA SG11201808608UA SG 11201808608U A SG11201808608U A SG 11201808608UA SG 11201808608U A SG11201808608U A SG 11201808608UA SG 11201808608U A SG11201808608U A SG 11201808608UA SG 11201808608U A SG11201808608U A SG 11201808608UA
- Authority
- SG
- Singapore
- Prior art keywords
- measurement system
- substrate
- focal plane
- focal
- coordinates
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7034—Leveling
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610200713.1A CN107290937B (zh) | 2016-03-31 | 2016-03-31 | 一种投影曝光装置及方法 |
PCT/CN2017/078934 WO2017167258A1 (zh) | 2016-03-31 | 2017-03-31 | 一种投影曝光装置及方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201808608UA true SG11201808608UA (en) | 2018-11-29 |
Family
ID=59962645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201808608UA SG11201808608UA (en) | 2016-03-31 | 2017-03-31 | Projection exposure apparatus and method |
Country Status (7)
Country | Link |
---|---|
US (1) | US10585361B2 (ja) |
JP (1) | JP6678251B2 (ja) |
KR (1) | KR102191685B1 (ja) |
CN (1) | CN107290937B (ja) |
SG (1) | SG11201808608UA (ja) |
TW (1) | TWI637246B (ja) |
WO (1) | WO2017167258A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108519726B (zh) * | 2018-04-03 | 2020-06-05 | 京东方科技集团股份有限公司 | 一种曝光图案的补正方法和装置、曝光设备 |
WO2019199063A1 (ko) | 2018-04-10 | 2019-10-17 | 주식회사 엘지화학 | 장식 부재 |
CN111158216A (zh) * | 2018-11-08 | 2020-05-15 | 上海矽越光电科技有限公司 | 一种曝光装置 |
CN110196535B (zh) * | 2019-06-20 | 2021-10-26 | 合肥芯碁微电子装备股份有限公司 | 一种卷对卷无掩膜激光直写光刻设备的分段曝光方法 |
NO20190876A1 (en) * | 2019-07-11 | 2021-01-12 | Visitech As | Real time Registration Lithography system |
CN113835308A (zh) * | 2021-09-23 | 2021-12-24 | 上海度宁科技有限公司 | 一种拼接曝光方法、装置及*** |
CN117055306B (zh) * | 2023-10-11 | 2024-01-16 | 福建安芯半导体科技有限公司 | 用于步进扫描光刻机的自动同步调焦*** |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL9100410A (nl) * | 1991-03-07 | 1992-10-01 | Asm Lithography Bv | Afbeeldingsapparaat voorzien van een focusfout- en/of scheefstandsdetectie-inrichting. |
JP2002190439A (ja) * | 2000-12-21 | 2002-07-05 | Nikon Corp | 位置計測方法及びその装置、露光方法及びその装置、並びにデバイス製造方法 |
TWI278722B (en) | 2002-05-22 | 2007-04-11 | Nikon Corp | Exposing method, exposing device and manufacturing method for device |
JP4172204B2 (ja) * | 2002-05-22 | 2008-10-29 | 株式会社ニコン | 露光方法及び露光装置、デバイス製造方法 |
EP1394616A1 (en) | 2002-08-29 | 2004-03-03 | ASML Netherlands BV | An alignment tool, a lithographic apparatus, an alignment method and a device manufacturing method |
JP2006261361A (ja) * | 2005-03-17 | 2006-09-28 | Nikon Corp | 露光装置及びマイクロデバイスの製造方法 |
JP2008171960A (ja) * | 2007-01-10 | 2008-07-24 | Canon Inc | 位置検出装置及び露光装置 |
JP4944690B2 (ja) * | 2007-07-09 | 2012-06-06 | キヤノン株式会社 | 位置検出装置の調整方法、位置検出装置、露光装置及びデバイス製造方法 |
JP5587917B2 (ja) * | 2009-03-13 | 2014-09-10 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置 |
JP5406624B2 (ja) * | 2009-08-10 | 2014-02-05 | キヤノン株式会社 | 検出装置、露光装置及びデバイスの製造方法 |
KR20140068970A (ko) * | 2011-08-31 | 2014-06-09 | 에이에스엠엘 네델란즈 비.브이. | 포커스 보정을 결정하는 방법, 리소그래피 처리 셀 및 디바이스 제조 방법 |
CN103186060B (zh) | 2011-12-31 | 2014-12-03 | 中芯国际集成电路制造(上海)有限公司 | 光刻对准装置、其使用方法及光刻机 |
CN103246169B (zh) | 2012-02-03 | 2015-04-15 | 上海微电子装备有限公司 | 一种焦面变化测量装置与方法 |
CN104076611B (zh) * | 2013-03-27 | 2016-07-06 | 上海微电子装备有限公司 | 用于光刻设备的拼接物镜成像测校方法 |
US9547241B2 (en) * | 2013-05-07 | 2017-01-17 | Asml Netherlands B.V. | Alignment sensor, lithographic apparatus and alignment method |
NL2014071A (en) * | 2014-02-03 | 2015-08-06 | Asml Netherlands Bv | Metrology method and apparatus, substrate, lithographic system and device manufacturing method. |
CN104950587B (zh) | 2014-03-25 | 2017-12-29 | 上海微电子装备(集团)股份有限公司 | 曝光装置与曝光方法 |
CN105005182B (zh) * | 2014-04-25 | 2017-06-27 | 上海微电子装备有限公司 | 多个传感器间相互位置关系校准方法 |
-
2016
- 2016-03-31 CN CN201610200713.1A patent/CN107290937B/zh active Active
-
2017
- 2017-03-31 JP JP2018550691A patent/JP6678251B2/ja active Active
- 2017-03-31 WO PCT/CN2017/078934 patent/WO2017167258A1/zh active Application Filing
- 2017-03-31 KR KR1020187031648A patent/KR102191685B1/ko active IP Right Grant
- 2017-03-31 US US16/089,956 patent/US10585361B2/en active Active
- 2017-03-31 SG SG11201808608UA patent/SG11201808608UA/en unknown
- 2017-03-31 TW TW106110993A patent/TWI637246B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI637246B (zh) | 2018-10-01 |
CN107290937B (zh) | 2018-10-16 |
US10585361B2 (en) | 2020-03-10 |
KR102191685B1 (ko) | 2020-12-16 |
KR20180132104A (ko) | 2018-12-11 |
US20190137894A1 (en) | 2019-05-09 |
JP6678251B2 (ja) | 2020-04-08 |
CN107290937A (zh) | 2017-10-24 |
TW201802623A (zh) | 2018-01-16 |
JP2019510275A (ja) | 2019-04-11 |
WO2017167258A1 (zh) | 2017-10-05 |
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