SG11201608264YA - Multi-layer package with integrated antenna - Google Patents

Multi-layer package with integrated antenna

Info

Publication number
SG11201608264YA
SG11201608264YA SG11201608264YA SG11201608264YA SG11201608264YA SG 11201608264Y A SG11201608264Y A SG 11201608264YA SG 11201608264Y A SG11201608264Y A SG 11201608264YA SG 11201608264Y A SG11201608264Y A SG 11201608264YA SG 11201608264Y A SG11201608264Y A SG 11201608264YA
Authority
SG
Singapore
Prior art keywords
integrated antenna
layer package
package
layer
antenna
Prior art date
Application number
SG11201608264YA
Inventor
Telesphor Kamgaing
Adel A Elsherbini
Torrey W Frank
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of SG11201608264YA publication Critical patent/SG11201608264YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/145—Organic substrates, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6672—High-frequency adaptations for passive devices for integrated passive components, e.g. semiconductor device with passive components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/142—HF devices
    • H01L2924/1421—RF devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1433—Application-specific integrated circuit [ASIC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1434—Memory
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping
SG11201608264YA 2014-05-06 2014-05-06 Multi-layer package with integrated antenna SG11201608264YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/036949 WO2015171118A1 (en) 2014-05-06 2014-05-06 Multi-layer package with integrated antenna

Publications (1)

Publication Number Publication Date
SG11201608264YA true SG11201608264YA (en) 2016-10-28

Family

ID=54392788

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201608264YA SG11201608264YA (en) 2014-05-06 2014-05-06 Multi-layer package with integrated antenna

Country Status (9)

Country Link
US (1) US10128177B2 (en)
EP (1) EP3140859B1 (en)
JP (1) JP6513786B2 (en)
KR (1) KR101894227B1 (en)
CN (1) CN106463466B (en)
RU (1) RU2654302C2 (en)
SG (1) SG11201608264YA (en)
TW (1) TWI653716B (en)
WO (1) WO2015171118A1 (en)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI575761B (en) * 2016-04-27 2017-03-21 南茂科技股份有限公司 Optoelectronic chip package and optoelectronic chip packaging process
US10368208B2 (en) 2016-06-12 2019-07-30 Apple Inc. Layers in messaging applications
US11569146B2 (en) * 2016-06-24 2023-01-31 Agency For Science, Technology And Research Semiconductor package and method of forming the same
CN109830442A (en) * 2016-10-24 2019-05-31 华为技术有限公司 A kind of package substrate and preparation method thereof, IC chip
KR102610547B1 (en) * 2017-01-04 2023-12-05 인텔 코포레이션 Package architecture for antenna arrays
US11276915B2 (en) * 2017-03-27 2022-03-15 Intel Corporation Antennas integrated into a printed circuit board
US11394103B2 (en) * 2017-07-18 2022-07-19 Samsung Electro-Mechanics Co., Ltd. Antenna module and manufacturing method thereof
US10658281B2 (en) * 2017-09-29 2020-05-19 Intel Corporation Integrated circuit substrate and method of making
CN107706520A (en) * 2017-10-25 2018-02-16 中芯长电半导体（江阴）有限公司 Fan-out-type antenna packages structure and preparation method thereof
KR102494338B1 (en) * 2017-11-08 2023-02-01 삼성전기주식회사 Antenna module
KR102494341B1 (en) * 2017-11-08 2023-02-01 삼성전기주식회사 Printed circuit board
KR102410799B1 (en) * 2017-11-28 2022-06-21 삼성전자주식회사 Antenna system for transmitting and receiving mm-wave signal
CN107910320A (en) * 2017-12-07 2018-04-13 中芯长电半导体（江阴）有限公司 Semiconductor structure with antenna module and preparation method thereof
KR102036546B1 (en) 2017-12-28 2019-10-25 삼성전기주식회사 Antenna module
US11088468B2 (en) 2017-12-28 2021-08-10 Samsung Electro-Mechanics Co., Ltd. Antenna module
US11769751B2 (en) 2017-12-29 2023-09-26 Intel Corporation Microelectronic assemblies
US10645808B2 (en) * 2018-02-22 2020-05-05 Apple Inc. Devices with radio-frequency printed circuits
US10665537B2 (en) * 2018-03-29 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure and manufacturing method thereof
TWI668831B (en) * 2018-04-17 2019-08-11 矽品精密工業股份有限公司 Electronic device and electronic package
US11276618B2 (en) * 2018-04-30 2022-03-15 Intel Corporation Bi-layer prepreg for reduced dielectric thickness
CN109037935B (en) * 2018-07-24 2024-01-30 南通至晟微电子技术有限公司 Millimeter wave low-profile broadband antenna
TW202011563A (en) * 2018-09-12 2020-03-16 矽品精密工業股份有限公司 Electronic package
TWI683478B (en) * 2018-09-13 2020-01-21 宏碁股份有限公司 Antenna module and mobile device for supporting wi-fi and ehf
KR102426215B1 (en) 2018-12-04 2022-07-28 삼성전기주식회사 Printed circuit board and module having the same
KR102426308B1 (en) * 2018-12-04 2022-07-28 삼성전기주식회사 Printed circuit board and module having the same
CN109830813A (en) * 2018-12-31 2019-05-31 瑞声科技（南京）有限公司 Antenna system and mobile terminal
US11342256B2 (en) 2019-01-24 2022-05-24 Applied Materials, Inc. Method of fine redistribution interconnect formation for advanced packaging applications
RU2703831C1 (en) * 2019-03-01 2019-10-22 Российская Федерация, от имени которой выступает ФОНД ПЕРСПЕКТИВНЫХ ИССЛЕДОВАНИЙ Method of electrical and mechanical connection of boards and interposers in 3d electronic assemblies
TWI696255B (en) * 2019-04-09 2020-06-11 矽品精密工業股份有限公司 Electronic package and manufacturing method thereof
IT201900006740A1 (en) * 2019-05-10 2020-11-10 Applied Materials Inc SUBSTRATE STRUCTURING PROCEDURES
IT201900006736A1 (en) 2019-05-10 2020-11-10 Applied Materials Inc PACKAGE MANUFACTURING PROCEDURES
US11931855B2 (en) 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
KR102627223B1 (en) 2019-08-01 2024-01-19 삼성전자주식회사 Antenna module and electronic system including the same
KR102268389B1 (en) 2019-09-11 2021-06-23 삼성전기주식회사 Printed circuit board and antenna module comprising the same
US11342307B2 (en) * 2019-10-14 2022-05-24 Nanya Technology Corporation Semiconductor structure and manufacturing method thereof
US11862546B2 (en) 2019-11-27 2024-01-02 Applied Materials, Inc. Package core assembly and fabrication methods
KR102244833B1 (en) * 2019-12-10 2021-04-27 주식회사 유텔 Stacked lcp electronic device
US11183232B2 (en) * 2020-02-25 2021-11-23 Micron Technology, Inc. Output buffer circuit with metal option
US11257790B2 (en) 2020-03-10 2022-02-22 Applied Materials, Inc. High connectivity device stacking
US10849227B1 (en) 2020-04-13 2020-11-24 Simmonds Precision Products, Inc. Cascading power bus for circuit card assembly stacks
KR20210127381A (en) 2020-04-14 2021-10-22 삼성전기주식회사 Antenna
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method
US11715886B2 (en) * 2020-05-08 2023-08-01 Mobix Labs, Inc. Low-cost, IPD and laminate based antenna array module
US11400545B2 (en) 2020-05-11 2022-08-02 Applied Materials, Inc. Laser ablation for package fabrication
US11735804B2 (en) * 2020-05-11 2023-08-22 Qualcomm Incorporated Multi-core broadband PCB antenna
US11756904B2 (en) * 2020-06-08 2023-09-12 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
US11232951B1 (en) 2020-07-14 2022-01-25 Applied Materials, Inc. Method and apparatus for laser drilling blind vias
US11676832B2 (en) 2020-07-24 2023-06-13 Applied Materials, Inc. Laser ablation system for package fabrication
KR20220040731A (en) * 2020-09-24 2022-03-31 삼성전기주식회사 Printed circuit board
KR102468935B1 (en) * 2020-11-06 2022-11-23 주식회사 유텔 Transmit/receive module based on multilayer liquid crystal polymer multilayer substrate
US11521937B2 (en) 2020-11-16 2022-12-06 Applied Materials, Inc. Package structures with built-in EMI shielding
US11404318B2 (en) 2020-11-20 2022-08-02 Applied Materials, Inc. Methods of forming through-silicon vias in substrates for advanced packaging
JP2022119655A (en) * 2021-02-04 2022-08-17 イビデン株式会社 Wiring substrate
US11705365B2 (en) 2021-05-18 2023-07-18 Applied Materials, Inc. Methods of micro-via formation for advanced packaging
CN115548670A (en) * 2021-06-30 2022-12-30 华为技术有限公司 Antenna structure, antenna module, chip and electronic equipment

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3616403A (en) 1968-10-25 1971-10-26 Ibm Prevention of inversion of p-type semiconductor material during rf sputtering of quartz
JPH0888319A (en) * 1994-09-16 1996-04-02 Toshiba Corp Semiconductor integrated circuit
US5892661A (en) * 1996-10-31 1999-04-06 Motorola, Inc. Smartcard and method of making
JPH10310687A (en) * 1997-05-14 1998-11-24 Ibiden Co Ltd Resin composite, and adhesive for electroless plating
US6556311B1 (en) 1997-05-28 2003-04-29 Hewlett-Packard Development Co., L.P. Luminance-based color resolution enhancement
JP2002312747A (en) * 2001-04-16 2002-10-25 Oji Paper Co Ltd Ic chip mounting body and manufacturing method therefor
JP2003046259A (en) * 2001-07-27 2003-02-14 Kyocera Corp Multilayer interconnection board
US7227179B2 (en) * 2002-09-30 2007-06-05 World Properties, Inc. Circuit materials, circuits, multi-layer circuits, and methods of manufacture thereof
JP2004111908A (en) * 2003-05-30 2004-04-08 Tdk Corp High-frequency electronic component
WO2005022965A2 (en) * 2003-08-29 2005-03-10 Thermalworks, Inc. Expansion constrained die stack
JP4413174B2 (en) * 2004-09-01 2010-02-10 三洋電機株式会社 Antenna integrated circuit device
US20080085572A1 (en) 2006-10-05 2008-04-10 Advanced Chip Engineering Technology Inc. Semiconductor packaging method by using large panel size
TW200931456A (en) 2008-01-03 2009-07-16 Phoenix Prec Technology Corp Packaging substrate having capacitor embedded therein and method for manufacturing the same
US8384596B2 (en) * 2008-06-19 2013-02-26 Broadcom Corporation Method and system for inter-chip communication via integrated circuit package antennas
WO2010035627A1 (en) 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8187920B2 (en) * 2009-02-20 2012-05-29 Texas Instruments Incorporated Integrated circuit micro-module
US8207453B2 (en) * 2009-12-17 2012-06-26 Intel Corporation Glass core substrate for integrated circuit devices and methods of making the same
US9420707B2 (en) 2009-12-17 2016-08-16 Intel Corporation Substrate for integrated circuit devices including multi-layer glass core and methods of making the same
US8217272B2 (en) 2009-12-18 2012-07-10 Intel Corporation Apparatus and method for embedding components in small-form-factor, system-on-packages
US20120012378A1 (en) * 2010-07-14 2012-01-19 Samsung Electro-Mechanics Co., Ltd. Printed circuit board and method of manufacturing the same
US8759950B2 (en) 2011-05-05 2014-06-24 Intel Corporation Radio- and electromagnetic interference through-silicon vias for stacked-die packages, and methods of making same
ITMI20111416A1 (en) 2011-07-28 2013-01-29 St Microelectronics Srl INTEGRATED CIRCUIT EQUIPPED WITH AT LEAST ONE INTEGRATED AERIAL
US8359389B1 (en) * 2011-10-11 2013-01-22 Google Inc. Monitoring application program resource consumption
US9288909B2 (en) * 2012-02-01 2016-03-15 Marvell World Trade Ltd. Ball grid array package substrate with through holes and method of forming same
KR101894387B1 (en) * 2012-05-22 2018-09-04 해성디에스 주식회사 Printed circuit board and method thereof
JP5942108B2 (en) * 2012-06-08 2016-06-29 旭化成株式会社 Polyamide composition and molded body obtained by molding polyamide composition
JP5955215B2 (en) * 2012-06-29 2016-07-20 京セラ株式会社 Antenna board
US8803283B2 (en) 2012-09-27 2014-08-12 Intel Corporation Vertical meander inductor for small core voltage regulators
KR101472633B1 (en) * 2012-10-16 2014-12-15 삼성전기주식회사 Hybrid lamination substrate, manufacturing method thereof and package substrate

Also Published As

Publication number Publication date
US20160020165A1 (en) 2016-01-21
TWI653716B (en) 2019-03-11
RU2016139295A (en) 2018-04-09
CN106463466B (en) 2019-11-08
TW201543625A (en) 2015-11-16
EP3140859A1 (en) 2017-03-15
RU2654302C2 (en) 2018-05-17
US10128177B2 (en) 2018-11-13
KR20160130290A (en) 2016-11-10
JP6513786B2 (en) 2019-05-15
KR101894227B1 (en) 2018-09-04
EP3140859A4 (en) 2018-01-24
EP3140859B1 (en) 2022-11-02
WO2015171118A1 (en) 2015-11-12
JP2017514317A (en) 2017-06-01
CN106463466A (en) 2017-02-22

Similar Documents

Publication Publication Date Title
SG11201608264YA (en) Multi-layer package with integrated antenna
TWI563638B (en) Integrated circuit structure
SG10201400390YA (en) Package structure
SG10201401622RA (en) Package structure
AU362787S (en) Containers
GB201613323D0 (en) Antenna device
GB201511366D0 (en) Integrated circuit package
PL3136901T3 (en) Packaging assembly
AU361269S (en) Package
GB201513656D0 (en) Antenna device
SG11201701526QA (en) Substrate container
GB2530152B (en) Electronic package with narrow-factor via including finish layer
EP2949442A4 (en) Unloading device
HK1199367A2 (en) Multi-layer covering
GB201413688D0 (en) Antenna
TWM477045U (en) Package substrate
EP3689775C0 (en) Package
SG11201702418XA (en) Integrated antenna device
TWI561958B (en) Integrated circuit
GB2529208B (en) Package assembly
GB201414392D0 (en) Antenna structure
GB2539136B (en) Integrated circuit package substrate
GB201707025D0 (en) Antenna device
GB201419801D0 (en) Antennas
KR101561920B9 (en) Semiconductor package