SG11201606759TA - Reaction chamber and plasma processing apparatus - Google Patents

Reaction chamber and plasma processing apparatus

Info

Publication number
SG11201606759TA
SG11201606759TA SG11201606759TA SG11201606759TA SG11201606759TA SG 11201606759T A SG11201606759T A SG 11201606759TA SG 11201606759T A SG11201606759T A SG 11201606759TA SG 11201606759T A SG11201606759T A SG 11201606759TA SG 11201606759T A SG11201606759T A SG 11201606759TA
Authority
SG
Singapore
Prior art keywords
processing apparatus
reaction chamber
plasma processing
plasma
chamber
Prior art date
Application number
SG11201606759TA
Inventor
Xingcun Li
Gang Wei
Dongsan Li
Changle Guan
Mingda Qiu
Longchao Zhao
Mingming Song
Original Assignee
Beijing Nmc Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Nmc Co Ltd filed Critical Beijing Nmc Co Ltd
Publication of SG11201606759TA publication Critical patent/SG11201606759TA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211Antennas, e.g. particular shapes of coils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119Windows
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
SG11201606759TA 2014-02-24 2014-12-03 Reaction chamber and plasma processing apparatus SG11201606759TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410063219.6A CN104862671B (en) 2014-02-24 2014-02-24 A kind of reaction chamber and plasma processing device
PCT/CN2014/092878 WO2015124014A1 (en) 2014-02-24 2014-12-03 Reaction cavity and plasma processing apparatus

Publications (1)

Publication Number Publication Date
SG11201606759TA true SG11201606759TA (en) 2016-09-29

Family

ID=53877612

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606759TA SG11201606759TA (en) 2014-02-24 2014-12-03 Reaction chamber and plasma processing apparatus

Country Status (7)

Country Link
US (1) US10854482B2 (en)
KR (1) KR101852582B1 (en)
CN (1) CN104862671B (en)
MY (1) MY193542A (en)
SG (1) SG11201606759TA (en)
TW (1) TWI534891B (en)
WO (1) WO2015124014A1 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106611643A (en) * 2015-10-23 2017-05-03 北京北方微电子基地设备工艺研究中心有限责任公司 Three-dimensional coil, reaction cavity chamber and semiconductor processing equipment
CN106255304A (en) * 2016-07-19 2016-12-21 中国人民解放军装甲兵工程学院 Plasma density computational methods in a kind of cylinder
CN108573846A (en) * 2017-03-09 2018-09-25 北京北方华创微电子装备有限公司 Plasma chamber and plasma processing device
CN109036817B (en) * 2017-06-08 2021-09-17 北京北方华创微电子装备有限公司 Inductive coupling coil and process chamber
CN109148073B (en) * 2017-06-16 2022-10-21 北京北方华创微电子装备有限公司 Coil assembly, plasma generating device and plasma equipment
KR101986744B1 (en) * 2017-09-27 2019-06-07 주식회사 유진테크 Plasma processing apparatus and method
CN109801824B (en) * 2017-11-15 2022-07-22 北京北方华创微电子装备有限公司 Dielectric window assembly and reaction chamber
EP3588533A1 (en) * 2018-06-21 2020-01-01 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Plasma source and method of operating the same
WO2020088169A1 (en) * 2018-10-30 2020-05-07 北京北方华创微电子装备有限公司 Sensing coil assembly and reaction chamber
KR102070544B1 (en) * 2019-04-17 2020-01-29 주식회사 기가레인 Plasma antenna and plasma processing apparatus including the same
CN110415948B (en) * 2019-08-09 2020-08-04 江苏鲁汶仪器有限公司 Three-dimensional four-spiral inductance coupling coil
CN111192812B (en) * 2020-01-07 2022-11-25 北京北方华创微电子装备有限公司 Inductive coupling device and semiconductor processing equipment
CN111725110B (en) * 2020-06-24 2023-09-08 北京北方华创微电子装备有限公司 Semiconductor processing equipment
CN112331546A (en) * 2020-10-26 2021-02-05 北京北方华创微电子装备有限公司 Semiconductor processing equipment
CN115602406A (en) * 2021-07-09 2023-01-13 北京北方华创微电子装备有限公司(Cn) Coil device for generating plasma and semiconductor processing equipment
CN115497797A (en) * 2022-05-27 2022-12-20 北京北方华创微电子装备有限公司 Coil structure for generating plasma and semiconductor processing equipment

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263188A (en) * 1994-03-18 1995-10-13 Hitachi Ltd Plasma treatment device
JPH08263188A (en) 1995-03-24 1996-10-11 Nec Corp Keyboard control system
US5964949A (en) * 1996-03-06 1999-10-12 Mattson Technology, Inc. ICP reactor having a conically-shaped plasma-generating section
KR20010080572A (en) 1998-11-26 2001-08-22 가나이 쓰토무 Dry etching apparatus and dry etching method
US7871490B2 (en) * 2003-03-18 2011-01-18 Top Engineering Co., Ltd. Inductively coupled plasma generation system with a parallel antenna array having evenly distributed power input and ground nodes and improved field distribution
US7188807B2 (en) 2005-03-11 2007-03-13 The Boeing Company Refueling booms with multiple couplings and associated methods and systems
KR100774521B1 (en) 2005-07-19 2007-11-08 주식회사 디엠에스 Plasma reactor having multiple antenna structure
KR100777151B1 (en) * 2006-03-21 2007-11-16 주식회사 디엠에스 Hybrid coupled plasma reactor with icp and ccp functions
CN101543141B (en) * 2006-11-28 2013-07-17 莎姆克株式会社 Plasma processing apparatus
WO2011040147A1 (en) * 2009-09-29 2011-04-07 株式会社 アルバック Plasma etching apparatus
JP5781349B2 (en) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 Plasma processing equipment
US9196463B2 (en) 2011-04-07 2015-11-24 Varian Semiconductor Equipment Associates, Inc. System and method for plasma monitoring using microwaves

Also Published As

Publication number Publication date
MY193542A (en) 2022-10-18
WO2015124014A1 (en) 2015-08-27
US10854482B2 (en) 2020-12-01
CN104862671B (en) 2019-08-23
US20170011938A1 (en) 2017-01-12
KR20160128338A (en) 2016-11-07
KR101852582B1 (en) 2018-04-26
TW201533799A (en) 2015-09-01
CN104862671A (en) 2015-08-26
TWI534891B (en) 2016-05-21

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