CN111192812B - Inductive coupling device and semiconductor processing equipment - Google Patents
Inductive coupling device and semiconductor processing equipment Download PDFInfo
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- CN111192812B CN111192812B CN202010012890.3A CN202010012890A CN111192812B CN 111192812 B CN111192812 B CN 111192812B CN 202010012890 A CN202010012890 A CN 202010012890A CN 111192812 B CN111192812 B CN 111192812B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
Abstract
The invention discloses an inductive coupling device and semiconductor processing equipment. The inductive coupling device comprises a radio frequency power supply, a medium cylinder, at least two groups of radio frequency coils and a direct current power supply, wherein the at least two groups of radio frequency coils and the direct current power supply are arranged on the circumferential side wall of the medium cylinder in a surrounding mode and are sequentially arranged in parallel along the axial direction of the medium cylinder, the input end of each group of radio frequency coils is electrically connected with the radio frequency power supply and the first pole of the direct current power supply, the output end of each group of radio frequency coils is electrically connected with the second pole of the direct current power supply and is arranged in a grounding mode, and therefore an ionization region corresponding to each group of radio frequency coils is formed in the medium cylinder. By means of the designed structure of the plurality of groups of radio frequency coils, under the same radio frequency power condition, the current passing through each group of radio frequency coils is reduced, so that the problem of skin effect caused by high power density is effectively reduced, in addition, the process gas can sequentially pass through the two ionization regions, multiple ionization is realized, the utilization efficiency of inductive coupling power can be effectively improved, and finally, the plasma density can be improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to an inductive coupling device and semiconductor processing equipment comprising the same.
Background
With the development of the flip chip bonding technology for three-dimensional stacked packages, micro-Electro-Mechanical systems (MEMS), vertically integrated sensor arrays, and Metal Oxide Semiconductor (MOS) power devices, the Through Silicon Via (TSV) interconnection technology is receiving more and more extensive attention and research. In order to achieve a High etching selectivity and a High etching rate, a Remote High Density Plasma (Remote HDP) is often used, and at this time, the substrate is located downstream of the Plasma, and the substrate has a High radical concentration and a low ion Density, which can reduce the loss of the mask layer caused by ion bombardment, so that the High etching rate and the High etching rate can be achieved at the same time.
In remote plasma, a solenoid coil inductively coupled plasma source is typically used, wherein the plasma is generated by a solenoid antenna and independent control of plasma density and energy is achieved under the bias of a lower electrode.
For the solenoid Inductively Coupled Plasma source, there are capacitive coupling and inductive coupling between the coil and the Plasma, in which the power occupied by the capacitive coupling part is about 50% of the inductive coupling power, so in order to obtain a higher Plasma density in an Inductively Coupled Plasma (ICP) mode, it is often necessary to apply a high power density to the Plasma source. For inductively coupled plasmas, the increase in power density can cause two problems: firstly, the direction of induced current generated by skin effect is opposite to the direction of current of the coil, so that the absorption of effective power is limited; second, high power densityCausing the dielectric window to generate heat effect and crack phenomenon, and the maximum power density born by the dielectric window is about 1.5W/cm for the planar inductive coupling plasma source 2 (ii) a For the solenoid inductively coupled plasma source, the maximum power density borne by the dielectric window is about 4W/cm 2 . In addition, with the increase of the power density, the surface adhesion of active particles, ion bombardment, light radiation and other effects are enhanced, so that the thermal effect of the dielectric window material is more serious.
Disclosure of Invention
The present invention is directed to at least one of the problems of the prior art, and provides an inductive coupling device and a semiconductor processing apparatus.
In order to achieve the above object, in a first aspect of the present invention, an inductive coupling device is provided for ionizing a process gas to form a plasma in a semiconductor device, the inductive coupling device includes a radio frequency power supply and a dielectric cylinder, and the inductive coupling device further includes at least two sets of radio frequency coils and a direct current power supply, wherein the at least two sets of radio frequency coils are arranged around a circumferential side wall of the dielectric cylinder and are sequentially arranged in parallel along an axial direction of the dielectric cylinder; wherein the content of the first and second substances,
the input end of each group of radio frequency coils is electrically connected with the radio frequency power supply and the first pole of the direct current power supply, and the output end of each group of radio frequency coils is electrically connected with the second pole of the direct current power supply and is arranged in a grounding mode, so that an ionization region corresponding to each group of radio frequency coils is formed in the medium cylinder.
Optionally, the inductive coupling device further comprises a first filter and a second filter, wherein,
the input end of each radio frequency coil is electrically connected with the first pole of the direct current power supply through the first filter, and the output end of each radio frequency coil is electrically connected with the second pole of the direct current power supply through the second filter.
Optionally, the first filter and the second filter are both low-pass filters.
Optionally, the first filter comprises a first inductor and a first capacitor, and the second filter comprises a second inductor and a second capacitor; wherein the content of the first and second substances,
a first end of the first inductor is electrically connected with a first pole of the direct current power supply and a first end of the first capacitor respectively, a second end of the first inductor is electrically connected with an input end of each radio frequency coil respectively, and a second end of the first capacitor is grounded;
the first end of the second inductor is electrically connected with the output end of each radio frequency coil, the second end of the second inductor is electrically connected with the second pole of the direct current power supply and the first end of the second capacitor, and the second end of the second capacitor is grounded.
Optionally, the inductive coupling device further includes a blocking capacitor, a matcher, and a grounding capacitor; wherein the content of the first and second substances,
the first end of the blocking capacitor is electrically connected with the radio frequency power supply through the matcher, and the second end of the blocking capacitor is respectively and electrically connected with the input end of each radio frequency coil and the second end of the first inductor:
the first end of the grounding capacitor is electrically connected with the output end of each radio frequency coil and the first end of the second inductor respectively, and the second end of the grounding capacitor is grounded.
Optionally, each group of the radio frequency coils comprises a plurality of turns of radio frequency coils, each turn of the radio frequency coil comprises a first conductive layer, an insulating layer wrapping the first conductive layer, and a second conductive layer wrapping the insulating layer; the input end of each radio frequency coil comprises a direct current input part and a radio frequency input part, and the output end of each radio frequency coil comprises a direct current output part and a radio frequency output part; wherein the content of the first and second substances,
each of the dc input sections is electrically connected to the first conductive layer and a first pole of the dc power supply, respectively, and each of the dc output sections is electrically connected to the first conductive layer and a second pole of the dc power supply, respectively;
each radio frequency input part is electrically connected with the second conductive layer and the radio frequency power supply respectively, and each radio frequency output part is grounded.
Optionally, the inductive coupling device further comprises at least one first conductive connection and at least one second conductive connection; wherein the content of the first and second substances,
the first conductive connecting piece is respectively and electrically connected with the second conductive layers at the two radio frequency input parts of the two adjacent radio frequency coils;
the second conductive connecting pieces are respectively and electrically connected with the second conductive layers at the two radio frequency output parts of the two adjacent radio frequency coils.
Optionally, winding directions of coils in two adjacent radio frequency coils are opposite to each other, so as to ensure consistency of directions of currents output by two adjacent radio frequency coils.
Optionally, the radio frequency coil is a stereo coil or a planar coil, and the cross section of the radio frequency coil is in a band shape, a ring shape or a column shape.
In a second aspect of the invention, there is provided a semiconductor processing apparatus comprising the inductive coupling device as described above.
The inductive coupling device and the semiconductor processing equipment comprise a radio frequency power supply and a medium cylinder, the inductive coupling device further comprises at least two radio frequency coils and a direct current power supply, the at least two radio frequency coils and the direct current power supply are wound on the circumferential side wall of the medium cylinder and are sequentially arranged in parallel along the axial direction of the medium cylinder, the input end of each group of radio frequency coils is electrically connected with the radio frequency power supply and the first pole of the direct current power supply, the output end of each group of radio frequency coils is electrically connected with the second pole of the direct current power supply and is arranged in a grounding mode, and therefore an ionization region corresponding to each group of radio frequency coils is formed in the medium cylinder. By means of the designed structure of the plurality of groups of radio frequency coils, under the same radio frequency power condition, the current of each group of radio frequency coils is reduced, so that the problem of skin effect caused by high power density is effectively reduced, process gas can sequentially pass through two ionization regions, multiple ionization is realized, the utilization efficiency of inductive coupling power can be effectively improved, and finally the plasma density can be improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural diagram of an inductive coupling device according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram of the Larmor movement of electrons in a magnetic field according to a second embodiment of the present invention;
FIG. 3 is a graph comparing the effect of a static magnetic field on plasma potential confinement in a third embodiment of the invention;
FIG. 4 is an equivalent circuit diagram of an inductive coupling device according to a fourth embodiment of the present invention;
FIG. 5 is a schematic diagram of two adjacent RF coils according to a fifth embodiment of the present invention;
FIG. 6 is a cross-sectional view of the RF coil with the DC output and the RF output in a sixth embodiment of the present invention;
FIG. 7 is an electrical schematic diagram illustrating a feeding manner of DC and AC isolation in a RF coil according to a seventh embodiment of the present invention;
fig. 8 is an electrical schematic diagram illustrating an output mode of dc and ac isolation in an rf coil according to an eighth embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are given by way of illustration and explanation only, not limitation.
As shown in fig. 1, a first aspect of the present invention relates to an inductive coupling device 100, the inductive coupling device 100 is used in a semiconductor processing apparatus 200, the semiconductor processing apparatus 200 generally comprises a process chamber 210, the inductive coupling device 100 of the present invention disposed above the process chamber 210, a gas inlet system 220 for providing a process gas to the process chamber 210, and a bias electrode 230 located in the process chamber 210, the bias electrode 230 is electrically connected to a bias rf source 250 via a bias matcher 240. The inductive coupling device 100 of the present invention is mainly used to provide remote plasma to the process chamber 210, where the remote plasma is generated in a region outside the process chamber 210 rather than inside the process chamber 210, and the structure of the inductive coupling device 100 and its application in the semiconductor processing apparatus 200 will be described in detail below.
As shown in fig. 1, the inductive coupling device 100 includes a radio frequency power source 110, a dielectric cylinder 130, two sets of radio frequency coils (140, 150) surrounding a circumferential sidewall of the dielectric cylinder 130 and arranged in parallel in an axial direction of the dielectric cylinder, and a dc power source 160. One set of rf coils 140 is disposed around the circumferential side wall of the media cartridge 130, and the other set of rf coils 150 is disposed around the circumferential side wall of the media cartridge 130, preferably, the two sets of rf coils (140, 150) are symmetrically disposed on the circumferential side wall of the media cartridge 130, but the invention is not limited thereto. In addition, the present invention does not have to limit the number of sets of rf coils around the circumferential sidewall of the dielectric cylinder 130, and the illustration of the present invention merely illustrates the structure of the inductive coupling device 100 including two sets of rf coils (140, 150), and besides, the inductive coupling device 100 may further include more sets of rf coils around the circumferential sidewall of the dielectric cylinder 130, which may be designed according to actual needs. The input ends (141, 151) of the two sets of rf coils (140, 150) are electrically connected to the rf power source 110 and the first pole (e.g., positive pole) of the dc power source 160, and the output ends (142, 152) of the two sets of rf coils (140, 150) are electrically connected to the second pole (e.g., negative pole) of the dc power source 160 and are grounded, so as to form two ionization regions corresponding to the two sets of rf coils (140, 150) in the dielectric cylinder 130.
Specifically, as shown in fig. 1, in the semiconductor processing apparatus 200 applying the above-mentioned inductive coupling device 100, during the process, the rf power source 110 (whose frequency is generally 0.4MHz to 60 MHz) supplies rf power to the two sets of rf coils (140, 150) to provide alternating currents, the alternating currents can generate alternating electromagnetic fields under the action of the two sets of rf coils (140, 150), and simultaneously, the process gas enters the inside of the dielectric cylinder 130 through the proceeding system 220, at this time, the process gas is ionized for the first time in an ionization region corresponding to the alternating electromagnetic field generated by the set of rf coils 140 inside the dielectric cylinder 130, and gas components including electrons, ions, neutral gas, and the like are formed, wherein the neutral gas is an uncharged gas including radicals and source gas, and the content of the radicals is about 100 to 1000 times of the ions. Then, the particles ionized in the first time are diffused to another set of ionizing regions corresponding to the alternating electromagnetic field generated by the rf coil 150, so that further ionization is generated, and the energy required for the second ionization is lower than that required for the first ionization.
Further, as shown in fig. 1, the two sets of rf coils (140, 150) can generate a static magnetic field by the dc power supply 160, and the static magnetic field can increase the plasma density and the radical density.
Specifically, as shown in fig. 2, the static magnetic field B generated by the two sets of rf coils (140, 150) can confine the electron e in the plasma, so that the electron e can make a larmor motion (spiral motion) along the direction of the magnetic induction line, and the motion mode can increase the motion path of the electron e in the plasma, thereby increasing the collision frequency of the electron e with the neutral gas and the radical, and further assisting the inductive coupling device 100 for secondary ionization to improve the plasma density.
Generally, the dc current output by the dc power supply 160 is generally 0 to 200A, the generated static magnetic field is generally 0 to 1000G, and the rf power provided by the rf power supply 110 is generally 0 to 10KW. Under the constraint action of static magnetic field, the plasma region will be constrained by magnetic induction lines, as shown in fig. 3, which can reduce the recombination of electrons or ions to the dielectric cylinder 130, and experimental studies prove that the inductive coupling device 100 of the present embodiment structure can make the plasma density from conventional 10 11 /cm 3 Is increased to 10 12 /cm 3 Can be used to substantially increase the plasma density and radical density of the remote plasma source.
In the inductive coupling device 100 of the present embodiment, with the aid of the designed structure of the two sets of rf coils (140, 150), under the same rf power condition, the current passing through each set of rf coil is reduced, so as to effectively reduce the problem of skin effect caused by high power density, and the process gas may sequentially pass through two ionization regions to realize twice ionization, thereby effectively improving the utilization efficiency of the inductive coupling power, and finally improving the plasma density.
It is understood that when the rf power source 110 provides rf power to the two sets of rf coils (140, 150), the rf power can be distributed through the inductance values of the two sets of rf coils (140, 150), and in order to control the balance of the surface power density of the dielectric cylinder 130, it is generally required that the inductance values of the two sets of rf coils (140, 150) are equal, i.e., the power distribution is balanced.
In order to achieve isolation of the dc current and the high frequency current, as shown in fig. 1, the inductive coupling device 100 further includes a first filter 170 and a second filter 180, wherein the input terminals (141, 151) of the two sets of rf coils (140, 150) are electrically connected to the first pole of the dc power source 160 via the first filter 170, and the output terminals (142, 152) of the two sets of rf coils (140, 150) are electrically connected to the second pole of the dc power source 160 via the second filter 180.
It should be noted that, the specific structure of the first filter 170 and the second filter 180 is not limited, for example, the first filter 170 and the second filter 180 may be both low-pass filters.
Specifically, as shown in fig. 4, the first filter 170 includes a first inductor L1 (whose corresponding frequency inductive reactance is greater than 2000 Ω for isolating the high-frequency current) and a first capacitor C1, and the second filter 180 includes a second inductor L2 (whose corresponding frequency inductive reactance is greater than 2000 Ω for isolating the high-frequency current) and a second capacitor C2; a first end of the first inductor L1 is electrically connected to the first pole of the dc power supply 160 and a first end of the first capacitor C1, a second end of the first inductor L2 is electrically connected to the input terminals (141, 151) of the two rf coils (140, 150), and a second end of the first capacitor C1 is grounded. A first end of the second inductor L2 is electrically connected to output ends (142, 152) of the two rf coils (140, 150), a second end of the second inductor L2 is electrically connected to a second pole of the dc power supply 160 and a first end of the second capacitor C2, and a second end of the second capacitor C2 is grounded.
In order to further effectively isolate the dc current without affecting the high frequency impedance and effectively balance the voltages at the input and output terminals of the rf coil, the inductive coupling device 100 further includes a dc blocking capacitor C3 (typically 22 nF), a matcher 120, and a grounding capacitor C4 (the capacitive reactance of the grounding capacitor C4 is typically 50% of the inductive reactance of the rf coil), as shown in fig. 4, wherein a first end of the dc blocking capacitor C3 is electrically connected to the rf power source 110 through the matcher 120, and a second end of the dc blocking capacitor C3 is electrically connected to the input terminals (141, 151) of the two sets of rf coils (140, 150) and a second end of the first inductor L1, respectively. The first end of the grounding capacitor C4 is electrically connected with the output ends (142, 152) of the two groups of radio frequency coils (140, 150) and the first end of the second inductor L2 respectively, and the second end of the grounding capacitor C4 is grounded.
As shown in fig. 5 and 6, both sets of radio frequency coils (140, 150) comprise a plurality of turns of radio frequency coils, each turn of radio frequency coil comprising a first conductive layer (143, 153), an insulating layer (145, 155) encasing the first conductive layer (143, 153), and a second conductive layer (144, 154) encasing the insulating layer (145, 155). The input terminals (141, 151) of the two sets of radio frequency coils (140, 150) each comprise a direct current input (141a, 151a) and a radio frequency input (141b, 151b), and the output terminals (142, 152) of the two sets of radio frequency coils (140, 150) each comprise a direct current output (142a, 152a) and a radio frequency output (142b, 152b).
Specifically, as shown in fig. 5, 6 and 8, two dc output parts (142a, 152a) are electrically connected to the corresponding first conductive layer (143, 153) and the second pole of the dc power supply 160, respectively, for example, as shown in fig. 6 and 8, two dc output parts (142a, 152a) may be electrically connected to the corresponding first conductive layer (143, 153) through pads (142c, 152c). The connection structure of the two dc input portions (141a, 151a) is similar to that of the dc output portion, and as shown in fig. 5 and 7, the two dc input portions (141a, 151a) are electrically connected to the corresponding first conductive layer (143, 153) and the first pole of the dc power supply 160, for example, the two dc input portions (141a, 151a) may be electrically connected to the corresponding first conductive layer (143, 153) through pads (141c, 151c). The two RF input portions (141b, 151b) are electrically connected to the corresponding second conductive layers (144, 154) and the RF power source 110, respectively, and the two RF output portions (142b, 152b) are grounded.
In the inductive coupling device 100 of the present embodiment, the electric field entering the dc conduction cross section is attenuated by the isolation of the insulating layers (145, 155). Further, since the high frequency and the dc current propagate through different positions, as shown in fig. 7 and 8, the mutual interference effect is also greatly reduced, and the filtering effect is better by the first filter 170 and the second filter 180.
Specific materials of the first conductive layer (143, 153), the second conductive layer (144, 154) and the insulating layer (145, 155) are not limited, for example, a copper material with high conductivity may be selected for the first conductive layer (143, 153) and the second conductive layer (144, 154), and tetrafluoro or the like may be generally selected for the insulating layer (145, 155).
As shown in fig. 5, the inductive coupling device 100 further includes at least one first conductive connection 191 and at least one second conductive connection 192; wherein the first conductive connectors 191 are electrically connected to the second conductive layers (144, 154) at the two radio frequency inputs (141b, 151b) of the two sets of radio frequency coils (140, 150), respectively. The second conductive connection 192 electrically connects the second conductive layers (144, 154) at the two radio frequency outputs (142b, 152b) of the two radio frequency coils (140, 150), respectively. In addition, in order to improve the low-pass filtering effect of the first filter 170 and the second filter 180, the rf coil and the two conductive connecting members may be designed to be coaxial according to the high-frequency surface skin effect and the dc current cross-section principle, as shown in fig. 5.
In addition, in order to ensure the direction consistency of the currents output by the two groups of radio frequency coils (140, 150), the coil winding directions of the two groups of radio frequency coils (140, 150) are opposite to each other.
In addition, the specific structure of the radio frequency coil is not limited, for example, the radio frequency coil may be a stereo coil or a planar coil, and the cross section of the radio frequency coil is in a band shape, a ring shape, a column shape, or the like.
In addition, in order to ensure that the capacitive coupling potential formed by the two sets of RF coils (140, 150) is far away from the bias electrode 230, so as to reduce the plasma potential formed by the inductive coupling device 100 and reduce the impact damage to the substrate, as shown in FIG. 5, the input terminals (141, 151) of the two sets of RF coils (140, 150) are disposed opposite to each other, and the output terminals (142, 152) are disposed opposite to each other.
In a second aspect of the present invention, as shown in fig. 1, a semiconductor processing apparatus 200 is provided, the semiconductor processing apparatus 200 comprises the inductive coupling device 100 described above, the specific structure of the inductive coupling device 100 can be referred to the related description,
the semiconductor processing apparatus 200 of the present embodiment has the inductive coupling device 100 described above, and by means of the designed structure of the two sets of rf coils (140, 150), under the same rf power condition, the current of each rf coil is reduced, so as to effectively reduce the skin effect problem caused by high power density, and the process gas can sequentially pass through two ionization regions to realize two ionization, so as to effectively improve the utilization efficiency of the inductive coupling power, and finally improve the plasma density.
As shown in fig. 1, the semiconductor processing apparatus 200 further includes a process chamber 210, and the media cartridge 130 is disposed above the process chamber 210 and sealingly coupled to the process chamber 210. Of course, the semiconductor processing apparatus 200 may include some of the structures described above or some other necessary components, such as the shield 260, the exhaust system 270, etc., in addition to the above.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and scope of the invention, and such modifications and improvements are also considered to be within the scope of the invention.
Claims (8)
1. An inductive coupling device is used for ionizing process gas in semiconductor processing equipment to form plasma, and comprises a radio frequency power supply and a medium cylinder, and is characterized by also comprising at least two groups of radio frequency coils and a direct current power supply, wherein the at least two groups of radio frequency coils surround the circumferential side wall of the medium cylinder and are sequentially arranged in parallel along the axial direction of the medium cylinder; wherein the content of the first and second substances,
the input end of each group of radio frequency coils is electrically connected with the radio frequency power supply and the first pole of the direct current power supply, and the output end of each group of radio frequency coils is electrically connected with the second pole of the direct current power supply and is arranged in a grounding mode, so that an ionization region corresponding to each group of radio frequency coils is formed in the medium cylinder;
the inductive coupling device further comprises a first filter and a second filter, wherein,
the input end of each radio frequency coil is electrically connected with the first pole of the direct current power supply through the first filter, and the output end of each radio frequency coil is electrically connected with the second pole of the direct current power supply through the second filter;
the inductive coupling device also comprises a grounding capacitor; wherein the content of the first and second substances,
the first end of the grounding capacitor is electrically connected with the output end of each radio frequency coil and the second filter respectively, and the second end of the grounding capacitor is grounded so as to balance the voltage of the input end and the output end of the radio frequency coil;
each group of radio frequency coils comprises a plurality of turns of radio frequency coils, each turn of radio frequency coil comprises a first conducting layer, an insulating layer wrapping the first conducting layer and a second conducting layer wrapping the insulating layer; the input end of each radio frequency coil comprises a direct current input part and a radio frequency input part, and the output end of each radio frequency coil comprises a direct current output part and a radio frequency output part; wherein the content of the first and second substances,
each of the dc input sections is electrically connected to the first conductive layer and a first pole of the dc power supply, respectively, and each of the dc output sections is electrically connected to the first conductive layer and a second pole of the dc power supply, respectively;
each radio frequency input part is electrically connected with the second conductive layer and the radio frequency power supply respectively, and each radio frequency output part is grounded.
2. The inductive coupling device of claim 1, wherein said first filter and said second filter are both low pass filters.
3. The inductive coupling device of claim 1, wherein said first filter comprises a first inductor and a first capacitor, and said second filter comprises a second inductor and a second capacitor; wherein the content of the first and second substances,
a first end of the first inductor is electrically connected with a first pole of the direct-current power supply and a first end of the first capacitor respectively, a second end of the first inductor is electrically connected with an input end of each radio-frequency coil respectively, and a second end of the first capacitor is grounded;
the first end of the second inductor is electrically connected with the output end of each radio frequency coil and the first end of the grounding capacitor, the second end of the second inductor is electrically connected with the second pole of the direct current power supply and the first end of the second capacitor, and the second end of the second capacitor is grounded.
4. The inductive coupling device of claim 3, further comprising a dc blocking capacitor, a matcher; wherein the content of the first and second substances,
the first end of the blocking capacitor is electrically connected with the radio frequency power supply through the matcher, and the second end of the blocking capacitor is electrically connected with the input end of each radio frequency coil and the second end of the first inductor respectively.
5. The inductive coupling device of any of claims 1 to 4, further comprising at least one first conductive connection and at least one second conductive connection; wherein, the first and the second end of the pipe are connected with each other,
the first conductive connecting piece is respectively and electrically connected with the second conductive layers at the two radio frequency input parts of the two adjacent radio frequency coils;
the second conductive connecting pieces are respectively and electrically connected with the second conductive layers at the two radio frequency output parts of the two adjacent radio frequency coils.
6. The inductive coupling device according to any one of claims 1 to 4, wherein winding directions of coils in two adjacent radio frequency coils are opposite to each other, so as to ensure consistency of current directions output by two adjacent radio frequency coils.
7. The inductive coupling device according to any of claims 1 to 4, wherein the radio frequency coil is a three-dimensional coil or a planar coil, and the cross section of the radio frequency coil is in a shape of a band, a ring or a column.
8. A semiconductor processing apparatus, characterized in that it comprises an inductive coupling device according to any of claims 1 to 7.
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| CN202010012890.3A CN111192812B (en) | 2020-01-07 | 2020-01-07 | Inductive coupling device and semiconductor processing equipment |
| PCT/CN2021/070102 WO2021139618A1 (en) | 2020-01-07 | 2021-01-04 | Inductive coupling apparatus and semiconductor processing device |
| TW110100246A TWI799776B (en) | 2020-01-07 | 2021-01-05 | Inductive coupling devices and semiconductor processing equipment |
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| CN111192812B (en) * | 2020-01-07 | 2022-11-25 | 北京北方华创微电子装备有限公司 | Inductive coupling device and semiconductor processing equipment |
| CN112331546A (en) * | 2020-10-26 | 2021-02-05 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
| CN114217093B (en) * | 2021-06-21 | 2024-04-26 | 西北工业大学 | Annular coupling system suitable for MEMS modal localization sensor |
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| CN110729165B (en) * | 2018-07-17 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Inductive coupling device, process chamber and semiconductor processing equipment |
| CN111192812B (en) * | 2020-01-07 | 2022-11-25 | 北京北方华创微电子装备有限公司 | Inductive coupling device and semiconductor processing equipment |
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| Publication number | Publication date |
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| TW202127505A (en) | 2021-07-16 |
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