SG11201608815XA - Reaction chamber and semi-conductor processing device - Google Patents
Reaction chamber and semi-conductor processing deviceInfo
- Publication number
- SG11201608815XA SG11201608815XA SG11201608815XA SG11201608815XA SG11201608815XA SG 11201608815X A SG11201608815X A SG 11201608815XA SG 11201608815X A SG11201608815X A SG 11201608815XA SG 11201608815X A SG11201608815X A SG 11201608815XA SG 11201608815X A SG11201608815X A SG 11201608815XA
- Authority
- SG
- Singapore
- Prior art keywords
- semi
- processing device
- reaction chamber
- conductor processing
- conductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410202122.9A CN105097401B (en) | 2014-05-13 | 2014-05-13 | A kind of reaction chamber and semiconductor processing equipment |
PCT/CN2014/092368 WO2015172549A1 (en) | 2014-05-13 | 2014-11-27 | Reaction chamber and semi-conductor processing device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201608815XA true SG11201608815XA (en) | 2016-11-29 |
Family
ID=54479270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201608815XA SG11201608815XA (en) | 2014-05-13 | 2014-11-27 | Reaction chamber and semi-conductor processing device |
Country Status (6)
Country | Link |
---|---|
US (1) | US9978570B2 (en) |
KR (1) | KR101887160B1 (en) |
CN (1) | CN105097401B (en) |
SG (1) | SG11201608815XA (en) |
TW (1) | TW201543529A (en) |
WO (1) | WO2015172549A1 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107164738B (en) * | 2016-03-08 | 2020-01-03 | 北京北方华创微电子装备有限公司 | Reaction chamber |
CN108573845B (en) * | 2017-03-07 | 2020-02-14 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
CN108573847B (en) * | 2017-03-14 | 2020-07-17 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
CN107301943A (en) * | 2017-07-27 | 2017-10-27 | 北京北方华创微电子装备有限公司 | Faraday shield and reaction chamber |
CN110512178B (en) * | 2018-05-22 | 2021-08-13 | 北京北方华创微电子装备有限公司 | Chamber liner, process chamber and semiconductor processing equipment |
CN111326391B (en) * | 2018-12-17 | 2023-01-24 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus |
CN112233962B (en) | 2020-09-17 | 2023-08-18 | 北京北方华创微电子装备有限公司 | Collecting assembly sleeved on base and semiconductor chamber |
JP2023549744A (en) * | 2020-11-03 | 2023-11-29 | アプライド マテリアルズ インコーポレイテッド | Magnetic material shielding around the plasma chamber near the pedestal |
CN113903649B (en) * | 2021-09-23 | 2024-04-12 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
CN117089822B (en) * | 2023-10-20 | 2024-01-02 | 研微(江苏)半导体科技有限公司 | Semiconductor reaction chamber, isolation device and isolation control method thereof |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100322330B1 (en) * | 1997-04-21 | 2002-03-18 | 히가시 데츠로 | Method and apparatus for ionized sputtering of materials |
US5948215A (en) * | 1997-04-21 | 1999-09-07 | Tokyo Electron Limited | Method and apparatus for ionized sputtering |
US6117279A (en) * | 1998-11-12 | 2000-09-12 | Tokyo Electron Limited | Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition |
US6398929B1 (en) * | 1999-10-08 | 2002-06-04 | Applied Materials, Inc. | Plasma reactor and shields generating self-ionized plasma for sputtering |
US6730174B2 (en) * | 2002-03-06 | 2004-05-04 | Applied Materials, Inc. | Unitary removable shield assembly |
US6846396B2 (en) * | 2002-08-08 | 2005-01-25 | Applied Materials, Inc. | Active magnetic shielding |
JP2010524225A (en) * | 2007-04-02 | 2010-07-15 | ソースル シーオー エルティディー | Substrate support apparatus and plasma etching apparatus including the same |
WO2012040986A1 (en) * | 2010-09-27 | 2012-04-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing apparatus |
TWI503429B (en) * | 2010-12-01 | 2015-10-11 | Hon Hai Prec Ind Co Ltd | Vacuum depositing article and method for making the same |
US9490106B2 (en) * | 2011-04-28 | 2016-11-08 | Lam Research Corporation | Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil |
US20130098871A1 (en) * | 2011-10-19 | 2013-04-25 | Fei Company | Internal Split Faraday Shield for an Inductively Coupled Plasma Source |
US20130277203A1 (en) * | 2012-04-24 | 2013-10-24 | Applied Materials, Inc. | Process kit shield and physical vapor deposition chamber having same |
-
2014
- 2014-05-13 CN CN201410202122.9A patent/CN105097401B/en active Active
- 2014-11-25 TW TW103140791A patent/TW201543529A/en unknown
- 2014-11-27 SG SG11201608815XA patent/SG11201608815XA/en unknown
- 2014-11-27 US US15/310,047 patent/US9978570B2/en active Active
- 2014-11-27 KR KR1020167032641A patent/KR101887160B1/en active IP Right Grant
- 2014-11-27 WO PCT/CN2014/092368 patent/WO2015172549A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
TWI563535B (en) | 2016-12-21 |
KR20160144497A (en) | 2016-12-16 |
TW201543529A (en) | 2015-11-16 |
CN105097401A (en) | 2015-11-25 |
KR101887160B1 (en) | 2018-09-11 |
WO2015172549A1 (en) | 2015-11-19 |
CN105097401B (en) | 2017-06-06 |
US20170154758A1 (en) | 2017-06-01 |
US9978570B2 (en) | 2018-05-22 |
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