SG11201510008UA - Semiconductor device and manufacturing method therefor - Google Patents
Semiconductor device and manufacturing method thereforInfo
- Publication number
- SG11201510008UA SG11201510008UA SG11201510008UA SG11201510008UA SG11201510008UA SG 11201510008U A SG11201510008U A SG 11201510008UA SG 11201510008U A SG11201510008U A SG 11201510008UA SG 11201510008U A SG11201510008U A SG 11201510008UA SG 11201510008U A SG11201510008U A SG 11201510008UA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- semiconductor device
- method therefor
- therefor
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310223571.7A CN103311284B (zh) | 2013-06-06 | 2013-06-06 | 半导体器件及其制作方法 |
PCT/CN2014/070150 WO2014194669A1 (zh) | 2013-06-06 | 2014-01-06 | 半导体器件及其制作方法 |
Publications (1)
Publication Number | Publication Date |
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SG11201510008UA true SG11201510008UA (en) | 2016-01-28 |
Family
ID=49136305
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201510008UA SG11201510008UA (en) | 2013-06-06 | 2014-01-06 | Semiconductor device and manufacturing method therefor |
Country Status (8)
Country | Link |
---|---|
US (1) | US9640624B2 (zh) |
EP (1) | EP3010043B1 (zh) |
JP (1) | JP6195979B2 (zh) |
KR (1) | KR101780890B1 (zh) |
CN (1) | CN103311284B (zh) |
DK (1) | DK3010043T3 (zh) |
SG (1) | SG11201510008UA (zh) |
WO (1) | WO2014194669A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103311284B (zh) * | 2013-06-06 | 2015-11-25 | 苏州晶湛半导体有限公司 | 半导体器件及其制作方法 |
US9881857B2 (en) * | 2014-06-12 | 2018-01-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad design for reliability enhancement in packages |
US9824990B2 (en) | 2014-06-12 | 2017-11-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad design for reliability enhancement in packages |
US9812562B1 (en) | 2016-06-03 | 2017-11-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure, HEMT structure and method of forming the same |
JP2018157141A (ja) * | 2017-03-21 | 2018-10-04 | 株式会社東芝 | 半導体装置及び半導体装置の製造方法 |
CN109935630B (zh) * | 2017-12-15 | 2021-04-23 | 苏州能讯高能半导体有限公司 | 半导体器件及其制造方法 |
CN112349773A (zh) * | 2019-08-07 | 2021-02-09 | 苏州能讯高能半导体有限公司 | 一种半导体器件及其制备方法 |
US11424356B2 (en) | 2020-03-16 | 2022-08-23 | Raytheon Company | Transistor having resistive field plate |
CN111952360B (zh) * | 2020-08-19 | 2023-02-21 | 深圳方正微电子有限公司 | 场效应管及其制备方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
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US6235639B1 (en) | 1998-11-25 | 2001-05-22 | Micron Technology, Inc. | Method of making straight wall containers and the resultant containers |
KR100403454B1 (ko) * | 2000-06-20 | 2003-11-01 | 주식회사 하이닉스반도체 | 반도체 소자의 금속 배선 형성 방법 |
KR20020002700A (ko) * | 2000-06-30 | 2002-01-10 | 박종섭 | 금속 배선 형성 방법 |
US7238560B2 (en) * | 2004-07-23 | 2007-07-03 | Cree, Inc. | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
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-
2013
- 2013-06-06 CN CN201310223571.7A patent/CN103311284B/zh active Active
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2014
- 2014-01-06 WO PCT/CN2014/070150 patent/WO2014194669A1/zh active Application Filing
- 2014-01-06 EP EP14807330.7A patent/EP3010043B1/en active Active
- 2014-01-06 DK DK14807330.7T patent/DK3010043T3/da active
- 2014-01-06 US US14/896,364 patent/US9640624B2/en active Active
- 2014-01-06 KR KR1020157037194A patent/KR101780890B1/ko active IP Right Grant
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KR101780890B1 (ko) | 2017-09-21 |
WO2014194669A1 (zh) | 2014-12-11 |
CN103311284A (zh) | 2013-09-18 |
DK3010043T3 (da) | 2019-05-06 |
CN103311284B (zh) | 2015-11-25 |
EP3010043B1 (en) | 2019-03-06 |
JP2016524817A (ja) | 2016-08-18 |
JP6195979B2 (ja) | 2017-09-13 |
US9640624B2 (en) | 2017-05-02 |
EP3010043A1 (en) | 2016-04-20 |
US20160126325A1 (en) | 2016-05-05 |
EP3010043A4 (en) | 2017-03-08 |
KR20160013218A (ko) | 2016-02-03 |
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