SG11201505097QA - Method for using sputtering target and method for manufacturing oxide film - Google Patents
Method for using sputtering target and method for manufacturing oxide filmInfo
- Publication number
- SG11201505097QA SG11201505097QA SG11201505097QA SG11201505097QA SG11201505097QA SG 11201505097Q A SG11201505097Q A SG 11201505097QA SG 11201505097Q A SG11201505097Q A SG 11201505097QA SG 11201505097Q A SG11201505097Q A SG 11201505097QA SG 11201505097Q A SG11201505097Q A SG 11201505097QA
- Authority
- SG
- Singapore
- Prior art keywords
- oxide film
- sputtering target
- manufacturing oxide
- manufacturing
- sputtering
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000004544 sputter deposition Methods 0.000 title 1
- 238000005477 sputtering target Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012147928 | 2012-06-29 | ||
JP2012266243 | 2012-12-05 | ||
JP2012273482 | 2012-12-14 | ||
PCT/JP2013/067156 WO2014002916A1 (en) | 2012-06-29 | 2013-06-17 | Method for using sputtering target and method for manufacturing oxide film |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201505097QA true SG11201505097QA (en) | 2015-08-28 |
Family
ID=49776993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201505097QA SG11201505097QA (en) | 2012-06-29 | 2013-06-17 | Method for using sputtering target and method for manufacturing oxide film |
Country Status (8)
Country | Link |
---|---|
US (2) | US20140001032A1 (en) |
EP (2) | EP3029172A1 (en) |
JP (3) | JP2014133942A (en) |
KR (2) | KR20150023054A (en) |
CN (2) | CN105132862A (en) |
SG (1) | SG11201505097QA (en) |
TW (2) | TW201414865A (en) |
WO (1) | WO2014002916A1 (en) |
Families Citing this family (26)
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US10557192B2 (en) | 2012-08-07 | 2020-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for using sputtering target and method for forming oxide film |
US9885108B2 (en) | 2012-08-07 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming sputtering target |
US9153650B2 (en) | 2013-03-19 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor |
KR20160009626A (en) | 2013-05-21 | 2016-01-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Oxide semiconductor film and formation method thereof |
TWI652822B (en) | 2013-06-19 | 2019-03-01 | 日商半導體能源研究所股份有限公司 | Oxide semiconductor film and formation method thereof |
TWI608523B (en) | 2013-07-19 | 2017-12-11 | 半導體能源研究所股份有限公司 | Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device |
KR102317297B1 (en) | 2014-02-19 | 2021-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Oxide, semiconductor device, module, and electronic device |
KR20160034200A (en) * | 2014-09-19 | 2016-03-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing semiconductor device |
TWI652362B (en) | 2014-10-28 | 2019-03-01 | 日商半導體能源研究所股份有限公司 | Oxide and manufacturing method thereof |
JP6647841B2 (en) | 2014-12-01 | 2020-02-14 | 株式会社半導体エネルギー研究所 | Preparation method of oxide |
TWI686874B (en) * | 2014-12-26 | 2020-03-01 | 日商半導體能源研究所股份有限公司 | Semiconductor device, display device, display module, electronic evice, oxide, and manufacturing method of oxide |
KR20170101233A (en) | 2014-12-26 | 2017-09-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for producing sputtering target |
KR20170109231A (en) | 2015-02-02 | 2017-09-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Oxides and methods for making them |
WO2017037564A1 (en) | 2015-08-28 | 2017-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor, transistor, and semiconductor device |
WO2017136699A1 (en) * | 2016-02-05 | 2017-08-10 | Epizyme, Inc | Arginine methyltransferase inhibitors and uses thereof |
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WO2017199130A1 (en) | 2016-05-19 | 2017-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Composite oxide semiconductor and transistor |
CN109075209B (en) | 2016-05-20 | 2022-05-27 | 株式会社半导体能源研究所 | Semiconductor device or display device including the same |
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JP7065147B2 (en) * | 2020-04-28 | 2022-05-11 | 株式会社ジャパンディスプレイ | Semiconductor device |
CN112403105B (en) * | 2020-10-30 | 2022-04-29 | 西北有色金属研究院 | Low-roughness small-aperture stainless steel porous sheet and preparation method thereof |
KR20240027052A (en) * | 2021-09-08 | 2024-02-29 | 고쿠리쯔 다이가쿠 호징 츠쿠바 다이가쿠 | Semiconductor devices and methods of manufacturing semiconductor devices |
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KR20140003315A (en) * | 2011-06-08 | 2014-01-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Sputtering target, method for manufacturing sputtering target, and method for forming thin film |
-
2013
- 2013-06-17 SG SG11201505097QA patent/SG11201505097QA/en unknown
- 2013-06-17 KR KR20157001835A patent/KR20150023054A/en not_active Application Discontinuation
- 2013-06-17 KR KR1020157020713A patent/KR101800858B1/en active IP Right Grant
- 2013-06-17 CN CN201510389380.7A patent/CN105132862A/en active Pending
- 2013-06-17 EP EP15202535.9A patent/EP3029172A1/en not_active Withdrawn
- 2013-06-17 CN CN201380045136.8A patent/CN104797736A/en active Pending
- 2013-06-17 WO PCT/JP2013/067156 patent/WO2014002916A1/en active Application Filing
- 2013-06-17 EP EP13810525.9A patent/EP2867387A4/en not_active Withdrawn
- 2013-06-18 US US13/920,422 patent/US20140001032A1/en not_active Abandoned
- 2013-06-18 TW TW102121558A patent/TW201414865A/en unknown
- 2013-06-18 TW TW104105316A patent/TWI617685B/en not_active IP Right Cessation
- 2013-06-27 JP JP2013134516A patent/JP2014133942A/en not_active Withdrawn
-
2015
- 2015-01-19 JP JP2015007730A patent/JP2015120980A/en not_active Withdrawn
- 2015-01-20 US US14/600,367 patent/US20150129416A1/en not_active Abandoned
- 2015-01-28 JP JP2015013991A patent/JP6005769B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW201522690A (en) | 2015-06-16 |
KR101800858B1 (en) | 2017-11-23 |
WO2014002916A1 (en) | 2014-01-03 |
EP2867387A4 (en) | 2016-03-09 |
US20150129416A1 (en) | 2015-05-14 |
JP6005769B2 (en) | 2016-10-12 |
EP2867387A1 (en) | 2015-05-06 |
CN104797736A (en) | 2015-07-22 |
KR20150023054A (en) | 2015-03-04 |
EP3029172A1 (en) | 2016-06-08 |
JP2014133942A (en) | 2014-07-24 |
US20140001032A1 (en) | 2014-01-02 |
CN105132862A (en) | 2015-12-09 |
JP2015120980A (en) | 2015-07-02 |
TWI617685B (en) | 2018-03-11 |
TW201414865A (en) | 2014-04-16 |
KR20150093250A (en) | 2015-08-17 |
JP2015129349A (en) | 2015-07-16 |
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