SG110057A1 - Compositions for preparing low dielectric materials - Google Patents
Compositions for preparing low dielectric materialsInfo
- Publication number
- SG110057A1 SG110057A1 SG200303511A SG200303511A SG110057A1 SG 110057 A1 SG110057 A1 SG 110057A1 SG 200303511 A SG200303511 A SG 200303511A SG 200303511 A SG200303511 A SG 200303511A SG 110057 A1 SG110057 A1 SG 110057A1
- Authority
- SG
- Singapore
- Prior art keywords
- low dielectric
- compositions
- dielectric materials
- preparing low
- performance
- Prior art date
Links
- 239000003989 dielectric material Substances 0.000 title abstract 3
- 239000000203 mixture Substances 0.000 title abstract 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000013500 performance material Substances 0.000 abstract 1
- 239000003361 porogen Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Inorganic Insulating Materials (AREA)
- Silicon Compounds (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Laminated Bodies (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38432102P | 2002-05-30 | 2002-05-30 | |
| US10/638,942 US7122880B2 (en) | 2002-05-30 | 2003-05-20 | Compositions for preparing low dielectric materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG110057A1 true SG110057A1 (en) | 2005-04-28 |
Family
ID=29718525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200303511A SG110057A1 (en) | 2002-05-30 | 2003-05-30 | Compositions for preparing low dielectric materials |
Country Status (10)
| Country | Link |
|---|---|
| US (3) | US7122880B2 (de) |
| EP (2) | EP1852903A3 (de) |
| JP (2) | JP2004161601A (de) |
| KR (1) | KR100561884B1 (de) |
| CN (1) | CN100539037C (de) |
| AT (1) | ATE365376T1 (de) |
| DE (1) | DE60314475T2 (de) |
| IL (2) | IL156231A (de) |
| SG (1) | SG110057A1 (de) |
| TW (2) | TWI303834B (de) |
Families Citing this family (54)
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|---|---|---|---|---|
| US6800571B2 (en) * | 1998-09-29 | 2004-10-05 | Applied Materials Inc. | CVD plasma assisted low dielectric constant films |
| US6541367B1 (en) * | 2000-01-18 | 2003-04-01 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
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| US6815373B2 (en) * | 2002-04-16 | 2004-11-09 | Applied Materials Inc. | Use of cyclic siloxanes for hardness improvement of low k dielectric films |
| US7122880B2 (en) * | 2002-05-30 | 2006-10-17 | Air Products And Chemicals, Inc. | Compositions for preparing low dielectric materials |
| US7307343B2 (en) * | 2002-05-30 | 2007-12-11 | Air Products And Chemicals, Inc. | Low dielectric materials and methods for making same |
| US6972217B1 (en) * | 2002-12-23 | 2005-12-06 | Lsi Logic Corporation | Low k polymer E-beam printable mechanical support |
| US6897163B2 (en) * | 2003-01-31 | 2005-05-24 | Applied Materials, Inc. | Method for depositing a low dielectric constant film |
| US7288292B2 (en) * | 2003-03-18 | 2007-10-30 | International Business Machines Corporation | Ultra low k (ULK) SiCOH film and method |
| US20050260420A1 (en) * | 2003-04-01 | 2005-11-24 | Collins Martha J | Low dielectric materials and methods for making same |
| US7462678B2 (en) * | 2003-09-25 | 2008-12-09 | Jsr Corporation | Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film |
| EP1689824B1 (de) * | 2003-11-21 | 2016-10-12 | BrisMat Inc. | Kieselsäurefilme und herstellungsverfahren |
| US8734906B2 (en) * | 2003-11-21 | 2014-05-27 | Brismat Inc. | Films and method of production thereof |
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| US20050196974A1 (en) * | 2004-03-02 | 2005-09-08 | Weigel Scott J. | Compositions for preparing low dielectric materials containing solvents |
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| US7998536B2 (en) | 2007-07-12 | 2011-08-16 | Applied Materials, Inc. | Silicon precursors to make ultra low-K films of K<2.2 with high mechanical properties by plasma enhanced chemical vapor deposition |
| US7989033B2 (en) * | 2007-07-12 | 2011-08-02 | Applied Materials, Inc. | Silicon precursors to make ultra low-K films with high mechanical properties by plasma enhanced chemical vapor deposition |
| US20090093135A1 (en) * | 2007-10-04 | 2009-04-09 | Asm Japan K.K. | Semiconductor manufacturing apparatus and method for curing material with uv light |
| US8987039B2 (en) | 2007-10-12 | 2015-03-24 | Air Products And Chemicals, Inc. | Antireflective coatings for photovoltaic applications |
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| JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
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| TW471108B (en) | 2000-11-27 | 2002-01-01 | Shr Min | Preparation of ultra low dielectric constant silicon dioxide film with nanometer pores |
| US6406794B1 (en) | 2001-02-08 | 2002-06-18 | Jsr Corporation | Film-forming composition |
| JP2002285086A (ja) | 2001-03-26 | 2002-10-03 | Jsr Corp | 膜形成用組成物、膜の形成方法およびシリカ系膜 |
| KR100432152B1 (ko) | 2001-04-12 | 2004-05-17 | 한국화학연구원 | 다분지형 폴리알킬렌 옥시드 포로젠과 이를 이용한저유전성 절연막 |
| US7122880B2 (en) * | 2002-05-30 | 2006-10-17 | Air Products And Chemicals, Inc. | Compositions for preparing low dielectric materials |
| US7307343B2 (en) * | 2002-05-30 | 2007-12-11 | Air Products And Chemicals, Inc. | Low dielectric materials and methods for making same |
-
2003
- 2003-05-20 US US10/638,942 patent/US7122880B2/en not_active Expired - Fee Related
- 2003-05-30 JP JP2003154737A patent/JP2004161601A/ja active Pending
- 2003-05-30 EP EP07109359A patent/EP1852903A3/de not_active Withdrawn
- 2003-05-30 KR KR1020030034779A patent/KR100561884B1/ko not_active IP Right Cessation
- 2003-05-30 AT AT03012119T patent/ATE365376T1/de not_active IP Right Cessation
- 2003-05-30 EP EP03012119A patent/EP1376671B1/de not_active Expired - Lifetime
- 2003-05-30 DE DE60314475T patent/DE60314475T2/de not_active Expired - Lifetime
- 2003-05-30 TW TW095102894A patent/TWI303834B/zh not_active IP Right Cessation
- 2003-05-30 SG SG200303511A patent/SG110057A1/en unknown
- 2003-05-30 TW TW092114842A patent/TWI265531B/zh not_active IP Right Cessation
- 2003-05-30 CN CNB031382975A patent/CN100539037C/zh not_active Expired - Fee Related
- 2003-06-01 IL IL156231A patent/IL156231A/en not_active IP Right Cessation
- 2003-06-01 IL IL188790A patent/IL188790A0/en unknown
-
2006
- 2006-07-11 US US11/484,075 patent/US7482676B2/en not_active Expired - Fee Related
- 2006-07-11 US US11/484,049 patent/US7294585B2/en not_active Expired - Fee Related
-
2010
- 2010-01-28 JP JP2010017150A patent/JP2010123992A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR100561884B1 (ko) | 2006-03-17 |
| TWI303834B (en) | 2008-12-01 |
| ATE365376T1 (de) | 2007-07-15 |
| US20060249818A1 (en) | 2006-11-09 |
| CN100539037C (zh) | 2009-09-09 |
| IL188790A0 (en) | 2008-04-13 |
| US20060249713A1 (en) | 2006-11-09 |
| CN1487567A (zh) | 2004-04-07 |
| JP2004161601A (ja) | 2004-06-10 |
| IL156231A (en) | 2009-02-11 |
| DE60314475T2 (de) | 2008-02-28 |
| US7482676B2 (en) | 2009-01-27 |
| EP1852903A3 (de) | 2008-12-10 |
| US7294585B2 (en) | 2007-11-13 |
| TW200401310A (en) | 2004-01-16 |
| EP1376671A1 (de) | 2004-01-02 |
| DE60314475D1 (de) | 2007-08-02 |
| JP2010123992A (ja) | 2010-06-03 |
| TW200703375A (en) | 2007-01-16 |
| US7122880B2 (en) | 2006-10-17 |
| US20040048960A1 (en) | 2004-03-11 |
| EP1852903A2 (de) | 2007-11-07 |
| TWI265531B (en) | 2006-11-01 |
| EP1376671B1 (de) | 2007-06-20 |
| IL156231A0 (en) | 2004-01-04 |
| KR20030094056A (ko) | 2003-12-11 |
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