SG10202002358TA - Phase Shift Mask Blank, Manufacturing Method Thereof, and Phase Shift Mask - Google Patents

Phase Shift Mask Blank, Manufacturing Method Thereof, and Phase Shift Mask

Info

Publication number
SG10202002358TA
SG10202002358TA SG10202002358TA SG10202002358TA SG10202002358TA SG 10202002358T A SG10202002358T A SG 10202002358TA SG 10202002358T A SG10202002358T A SG 10202002358TA SG 10202002358T A SG10202002358T A SG 10202002358TA SG 10202002358T A SG10202002358T A SG 10202002358TA
Authority
SG
Singapore
Prior art keywords
phase shift
shift mask
manufacturing
mask blank
blank
Prior art date
Application number
SG10202002358TA
Inventor
Takuro Kosaka
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10202002358TA publication Critical patent/SG10202002358TA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG10202002358TA 2019-03-29 2020-03-13 Phase Shift Mask Blank, Manufacturing Method Thereof, and Phase Shift Mask SG10202002358TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019067113 2019-03-29
JP2019111054 2019-06-14

Publications (1)

Publication Number Publication Date
SG10202002358TA true SG10202002358TA (en) 2020-10-29

Family

ID=69845261

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202002358TA SG10202002358TA (en) 2019-03-29 2020-03-13 Phase Shift Mask Blank, Manufacturing Method Thereof, and Phase Shift Mask

Country Status (7)

Country Link
US (2) US11333965B2 (en)
EP (1) EP3719574A1 (en)
JP (2) JP7264083B2 (en)
KR (1) KR102570915B1 (en)
CN (1) CN111752086A (en)
SG (1) SG10202002358TA (en)
TW (1) TWI824129B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7255512B2 (en) * 2019-03-29 2023-04-11 信越化学工業株式会社 Phase shift mask blank and phase shift mask

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3410089B2 (en) 1991-11-13 2003-05-26 株式会社東芝 Exposure mask manufacturing method and exposure method
KR0131192B1 (en) 1992-04-22 1998-04-14 Toshiba Corp Exposed mask, fabrication method of exposed mask substrate and patterning method based on exposed mask
JP2002040625A (en) 1992-07-17 2002-02-06 Toshiba Corp Mask for exposure, resist pattern forming method and method for producing substrate for the mask
JP3064769B2 (en) 1992-11-21 2000-07-12 アルバック成膜株式会社 PHASE SHIFT MASK, ITS MANUFACTURING METHOD, AND EXPOSURE METHOD USING THE PHASE SHIFT MASK
JP3115185B2 (en) * 1993-05-25 2000-12-04 株式会社東芝 Exposure mask and pattern forming method
JP3431313B2 (en) * 1994-11-08 2003-07-28 株式会社東芝 Exposure substrate, exposure mask, and method of manufacturing exposure substrate
JPH1048805A (en) * 1996-07-30 1998-02-20 Toppan Printing Co Ltd Halftone phase shift mask blank and halftone phase shift mask
JP4933753B2 (en) 2005-07-21 2012-05-16 信越化学工業株式会社 Phase shift mask blank, phase shift mask, and manufacturing method thereof
JP4551344B2 (en) 2006-03-02 2010-09-29 信越化学工業株式会社 Photomask blank and photomask
JP4509050B2 (en) 2006-03-10 2010-07-21 信越化学工業株式会社 Photomask blank and photomask
JP6341129B2 (en) * 2015-03-31 2018-06-13 信越化学工業株式会社 Halftone phase shift mask blank and halftone phase shift mask
JP6380204B2 (en) * 2015-03-31 2018-08-29 信越化学工業株式会社 Halftone phase shift mask blank, halftone phase shift mask and pattern exposure method
JP6500791B2 (en) * 2016-01-22 2019-04-17 信越化学工業株式会社 Halftone phase shift photomask blank and method of manufacturing the same
JP6558326B2 (en) 2016-08-23 2019-08-14 信越化学工業株式会社 Halftone phase shift mask blank manufacturing method, halftone phase shift mask blank, halftone phase shift mask, and thin film forming apparatus for photomask blank
JP6271780B2 (en) 2017-02-01 2018-01-31 Hoya株式会社 Mask blank, phase shift mask, and semiconductor device manufacturing method
WO2018181891A1 (en) * 2017-03-31 2018-10-04 凸版印刷株式会社 Phase shift mask blank, phase shift mask and manufacturing method for phase shift mask
JP6716629B2 (en) 2017-05-18 2020-07-01 エスアンドエス テック カンパニー リミテッド Phase inversion blank mask and manufacturing method thereof
JP6832823B2 (en) 2017-09-29 2021-02-24 シャープ株式会社 Authentication system and server equipment
JP2019111054A (en) 2017-12-22 2019-07-11 株式会社三共 Game machine

Also Published As

Publication number Publication date
KR20200115242A (en) 2020-10-07
US20220236638A1 (en) 2022-07-28
JP2023073408A (en) 2023-05-25
US11333965B2 (en) 2022-05-17
US20200310240A1 (en) 2020-10-01
US11644742B2 (en) 2023-05-09
JP2020204761A (en) 2020-12-24
TW202105044A (en) 2021-02-01
JP7264083B2 (en) 2023-04-25
EP3719574A1 (en) 2020-10-07
KR102570915B1 (en) 2023-08-24
CN111752086A (en) 2020-10-09
TWI824129B (en) 2023-12-01

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