SE9601172D0 - Insulated gate bipolar transistor having a trench and a method for procuction thereof - Google Patents
Insulated gate bipolar transistor having a trench and a method for procuction thereofInfo
- Publication number
- SE9601172D0 SE9601172D0 SE9601172A SE9601172A SE9601172D0 SE 9601172 D0 SE9601172 D0 SE 9601172D0 SE 9601172 A SE9601172 A SE 9601172A SE 9601172 A SE9601172 A SE 9601172A SE 9601172 D0 SE9601172 D0 SE 9601172D0
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- trench
- type
- highly doped
- source region
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 3
- 230000036039 immunity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/6634—Vertical insulated gate bipolar transistors with a recess formed by etching in the source/emitter contact region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9601172A SE9601172D0 (sv) | 1996-03-27 | 1996-03-27 | Insulated gate bipolar transistor having a trench and a method for procuction thereof |
US08/637,105 US5763902A (en) | 1996-03-27 | 1996-04-24 | Insulated gate bipolar transistor having a trench and a method for production thereof |
EP97915821A EP0890191A1 (en) | 1996-03-27 | 1997-03-26 | Insulated gate bipolar transistor having a trench and a method for production thereof |
PCT/SE1997/000531 WO1997036329A1 (en) | 1996-03-27 | 1997-03-26 | Insulated gate bipolar transistor having a trench and a method for production thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9601172A SE9601172D0 (sv) | 1996-03-27 | 1996-03-27 | Insulated gate bipolar transistor having a trench and a method for procuction thereof |
US08/637,105 US5763902A (en) | 1996-03-27 | 1996-04-24 | Insulated gate bipolar transistor having a trench and a method for production thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
SE9601172D0 true SE9601172D0 (sv) | 1996-03-27 |
Family
ID=26662558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9601172A SE9601172D0 (sv) | 1996-03-27 | 1996-03-27 | Insulated gate bipolar transistor having a trench and a method for procuction thereof |
Country Status (3)
Country | Link |
---|---|
US (1) | US5763902A (sv) |
SE (1) | SE9601172D0 (sv) |
WO (1) | WO1997036329A1 (sv) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6180958B1 (en) * | 1997-02-07 | 2001-01-30 | James Albert Cooper, Jr. | Structure for increasing the maximum voltage of silicon carbide power transistors |
SE9800286D0 (sv) * | 1998-02-02 | 1998-02-02 | Abb Research Ltd | A transistor of SiC |
CN117457731B (zh) * | 2023-12-22 | 2024-05-28 | 深圳天狼芯半导体有限公司 | 一种栅极下方具有P型空间层的SiC垂直IGBT及制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS542077A (en) * | 1977-06-08 | 1979-01-09 | Hitachi Ltd | Semiconductor switching element |
US4466173A (en) * | 1981-11-23 | 1984-08-21 | General Electric Company | Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques |
JPH0817233B2 (ja) * | 1987-11-11 | 1996-02-21 | 三菱電機株式会社 | 絶縁ゲート型バイポーラトランジスタ |
US5173435A (en) * | 1987-11-11 | 1992-12-22 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate bipolar transistor |
US5233215A (en) * | 1992-06-08 | 1993-08-03 | North Carolina State University At Raleigh | Silicon carbide power MOSFET with floating field ring and floating field plate |
US5506421A (en) * | 1992-11-24 | 1996-04-09 | Cree Research, Inc. | Power MOSFET in silicon carbide |
US5396087A (en) * | 1992-12-14 | 1995-03-07 | North Carolina State University | Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up |
US5397717A (en) * | 1993-07-12 | 1995-03-14 | Motorola, Inc. | Method of fabricating a silicon carbide vertical MOSFET |
-
1996
- 1996-03-27 SE SE9601172A patent/SE9601172D0/sv unknown
- 1996-04-24 US US08/637,105 patent/US5763902A/en not_active Expired - Fee Related
-
1997
- 1997-03-26 WO PCT/SE1997/000531 patent/WO1997036329A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
WO1997036329A1 (en) | 1997-10-02 |
US5763902A (en) | 1998-06-09 |
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