SE8001225L - CMOS / SOS TYPE MEMORY CELL - Google Patents

CMOS / SOS TYPE MEMORY CELL

Info

Publication number
SE8001225L
SE8001225L SE8001225A SE8001225A SE8001225L SE 8001225 L SE8001225 L SE 8001225L SE 8001225 A SE8001225 A SE 8001225A SE 8001225 A SE8001225 A SE 8001225A SE 8001225 L SE8001225 L SE 8001225L
Authority
SE
Sweden
Prior art keywords
cmos
memory cell
type memory
sos type
sos
Prior art date
Application number
SE8001225A
Other languages
Unknown language ( )
Swedish (sv)
Other versions
SE444484B (en
Inventor
A G F Dingwall
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE8001225L publication Critical patent/SE8001225L/en
Publication of SE444484B publication Critical patent/SE444484B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
SE8001225A 1979-02-26 1980-02-15 INTEGRATED CIRCUIT CONTAINING INCLUDING A MEMORY CELL WITH A FIRST AND ANOTHER INVERTER SE444484B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1520379A 1979-02-26 1979-02-26

Publications (2)

Publication Number Publication Date
SE8001225L true SE8001225L (en) 1980-08-27
SE444484B SE444484B (en) 1986-04-14

Family

ID=21770084

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8001225A SE444484B (en) 1979-02-26 1980-02-15 INTEGRATED CIRCUIT CONTAINING INCLUDING A MEMORY CELL WITH A FIRST AND ANOTHER INVERTER

Country Status (5)

Country Link
JP (1) JPS55117266A (en)
DE (1) DE3006442A1 (en)
FR (1) FR2449973A1 (en)
IT (1) IT1141377B (en)
SE (1) SE444484B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678157A (en) * 1979-11-29 1981-06-26 Toshiba Corp Semiconductor device
DE3147951A1 (en) * 1981-12-03 1983-06-16 Siemens AG, 1000 Berlin und 8000 München STATIC STORAGE CELL
JPS59130459A (en) * 1983-01-17 1984-07-27 Hitachi Ltd Semiconductor memory integrated circuit device
JPH065714B2 (en) * 1983-07-26 1994-01-19 日本電気株式会社 Semiconductor memory cell
DE3650186T2 (en) * 1985-01-30 1995-05-24 Toshiba Kawasaki Kk Semiconductor device and method for its production.
US4805148A (en) * 1985-11-22 1989-02-14 Diehl Nagle Sherra E High impendance-coupled CMOS SRAM for improved single event immunity
US5239503A (en) * 1992-06-17 1993-08-24 Aptix Corporation High voltage random-access memory cell incorporating level shifter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1054714A (en) * 1974-10-09 1979-05-15 James A. Luisi High speed memory cell

Also Published As

Publication number Publication date
DE3006442C2 (en) 1990-06-07
JPH0117264B2 (en) 1989-03-29
IT1141377B (en) 1986-10-01
FR2449973B1 (en) 1984-10-19
IT8020130A0 (en) 1980-02-22
FR2449973A1 (en) 1980-09-19
DE3006442A1 (en) 1980-09-04
JPS55117266A (en) 1980-09-09
SE444484B (en) 1986-04-14

Similar Documents

Publication Publication Date Title
JPS5690482A (en) Memory structuring element
JPS55153133A (en) Optical memory
JPS56134387A (en) Semiconductor memory
JPS5694769A (en) Integrated circuit memory array
IT1165399B (en) IMPROVED MEMORY
IT8025973A0 (en) IMPROVED MEMORY CELL.
FI65323B (en) FOERFARANDE FOER MINSKNING AV NOX-STRAOLNING
JPS52119035A (en) Memory array
FI64188B (en) FOERFARANDE FOER SELEKTIV LAKNING AV NICKEL-KOPPARSKAERSTEN
NL7809899A (en) MEMORY CELL.
DE3072204D1 (en) SEMICONDUCTOR MEMORY ARRANGEMENT.
JPS5694581A (en) Memory array
SE8001225L (en) CMOS / SOS TYPE MEMORY CELL
JPS55129387A (en) Memory element
FI791513A (en) FOERFARANDE FOER SNABB REGLERING AV TELEFONTRAODARS SKUMPLASTISOLERINGSPROCESS
IT1165433B (en) IMPROVED MEMORY
FI801201A (en) GALVANISK UTFAELLNING AV EN VIT GULDLEGERING
JPS5683884A (en) Multiiaccess memory
JPS567292A (en) Dsemiconductor memory
FI790162A (en) JORDBEARBETNINGSANORDNING FOER BEARBETNING AV SKOGSMARK
IT8022716A0 (en) IMPROVED MEMORY STRUCTURE.
IT1165432B (en) IMPROVED MEMORY
JPS5693180A (en) Memory
JPS5633882A (en) Nonnvolatile memory cell
FI800360A (en) NYTT FOERFARANDE FOER FRAMSTAELLNING AV ANTIBIOTIKEN SISOMICIN

Legal Events

Date Code Title Description
NUG Patent has lapsed

Ref document number: 8001225-5

Effective date: 19910911

Format of ref document f/p: F