IT1141377B - CMOS / SOS MEMORY CELL, INCLUDING DIODES - Google Patents

CMOS / SOS MEMORY CELL, INCLUDING DIODES

Info

Publication number
IT1141377B
IT1141377B IT20130/80A IT2013080A IT1141377B IT 1141377 B IT1141377 B IT 1141377B IT 20130/80 A IT20130/80 A IT 20130/80A IT 2013080 A IT2013080 A IT 2013080A IT 1141377 B IT1141377 B IT 1141377B
Authority
IT
Italy
Prior art keywords
cmos
memory cell
including diodes
sos
sos memory
Prior art date
Application number
IT20130/80A
Other languages
Italian (it)
Other versions
IT8020130A0 (en
Inventor
Andrew Gordon Francis Dingwall
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT8020130A0 publication Critical patent/IT8020130A0/en
Application granted granted Critical
Publication of IT1141377B publication Critical patent/IT1141377B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
IT20130/80A 1979-02-26 1980-02-22 CMOS / SOS MEMORY CELL, INCLUDING DIODES IT1141377B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1520379A 1979-02-26 1979-02-26

Publications (2)

Publication Number Publication Date
IT8020130A0 IT8020130A0 (en) 1980-02-22
IT1141377B true IT1141377B (en) 1986-10-01

Family

ID=21770084

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20130/80A IT1141377B (en) 1979-02-26 1980-02-22 CMOS / SOS MEMORY CELL, INCLUDING DIODES

Country Status (5)

Country Link
JP (1) JPS55117266A (en)
DE (1) DE3006442A1 (en)
FR (1) FR2449973A1 (en)
IT (1) IT1141377B (en)
SE (1) SE444484B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678157A (en) * 1979-11-29 1981-06-26 Toshiba Corp Semiconductor device
DE3147951A1 (en) * 1981-12-03 1983-06-16 Siemens AG, 1000 Berlin und 8000 München STATIC STORAGE CELL
JPS59130459A (en) * 1983-01-17 1984-07-27 Hitachi Ltd Semiconductor memory integrated circuit device
JPH065714B2 (en) * 1983-07-26 1994-01-19 日本電気株式会社 Semiconductor memory cell
DE3650186T2 (en) * 1985-01-30 1995-05-24 Toshiba Kawasaki Kk Semiconductor device and method for its production.
US4805148A (en) * 1985-11-22 1989-02-14 Diehl Nagle Sherra E High impendance-coupled CMOS SRAM for improved single event immunity
US5239503A (en) * 1992-06-17 1993-08-24 Aptix Corporation High voltage random-access memory cell incorporating level shifter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1054714A (en) * 1974-10-09 1979-05-15 James A. Luisi High speed memory cell

Also Published As

Publication number Publication date
DE3006442C2 (en) 1990-06-07
JPH0117264B2 (en) 1989-03-29
FR2449973B1 (en) 1984-10-19
IT8020130A0 (en) 1980-02-22
SE8001225L (en) 1980-08-27
FR2449973A1 (en) 1980-09-19
DE3006442A1 (en) 1980-09-04
JPS55117266A (en) 1980-09-09
SE444484B (en) 1986-04-14

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