SE520149C2 - Förfarande för att öka livslängden hos värmeelement av molybdensilicidtyp vid lägre temperatur - Google Patents

Förfarande för att öka livslängden hos värmeelement av molybdensilicidtyp vid lägre temperatur

Info

Publication number
SE520149C2
SE520149C2 SE0003512A SE0003512A SE520149C2 SE 520149 C2 SE520149 C2 SE 520149C2 SE 0003512 A SE0003512 A SE 0003512A SE 0003512 A SE0003512 A SE 0003512A SE 520149 C2 SE520149 C2 SE 520149C2
Authority
SE
Sweden
Prior art keywords
increasing
life
sub
molybdenum silicide
lower temperature
Prior art date
Application number
SE0003512A
Other languages
English (en)
Other versions
SE0003512D0 (sv
SE0003512L (sv
Inventor
Mats Sundberg
Original Assignee
Sandvik Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandvik Ab filed Critical Sandvik Ab
Priority to SE0003512A priority Critical patent/SE520149C2/sv
Publication of SE0003512D0 publication Critical patent/SE0003512D0/sv
Priority to ES01970456T priority patent/ES2281444T3/es
Priority to AT01970456T priority patent/ATE356101T1/de
Priority to US10/381,359 priority patent/US6919544B2/en
Priority to EP01970456A priority patent/EP1328491B1/en
Priority to DE60127152T priority patent/DE60127152T2/de
Priority to CNB018165141A priority patent/CN1195706C/zh
Priority to PCT/SE2001/002060 priority patent/WO2002026657A1/en
Priority to AU2001290457A priority patent/AU2001290457A1/en
Priority to JP2002530444A priority patent/JP4571373B2/ja
Priority to KR1020037004130A priority patent/KR100558111B1/ko
Publication of SE0003512L publication Critical patent/SE0003512L/sv
Priority to NO20031362A priority patent/NO20031362L/no
Publication of SE520149C2 publication Critical patent/SE520149C2/sv

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/58085—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides
    • C04B35/58092—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides based on refractory metal silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/0656—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of silicides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/148—Silicon, e.g. silicon carbide, magnesium silicide, heating transistors or diodes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D1/00—Casings; Linings; Walls; Roofs
    • F27D1/0003—Linings or walls
    • F27D1/0006—Linings or walls formed from bricks or layers with a particular composition or specific characteristics
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0006—Electric heating elements or system
    • F27D2099/0008—Resistor heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/018—Heaters using heating elements comprising mosi2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making

Description

70 75 20 25 30 520 149 Ett annat sätt beskrives i det svenska patentet nr. 0001846- 5, nämligen att vattenhalten i den atmosfär som omger elemen- bringas att vara låg. Detta sätt ger ten, när dessa opereras, ett tillfredsställande skydd mot pestbildning.
Föreliggande förfarande ökar livslängden betydligt.
Föreliggande uppfinning avser således ett förfarande för att öka livslängden för värmeelement väsentligen bestående av molybdensilicid samt legeringar av detta grundmaterial, när elementen opereras vid en låg temperatur, såsom i intervallet 400 - 600 °C och utmärkes av, att värmeelementets material bringas att utgöras av Mo(Siy¶Alx)2 och upp till 40% Al2O3och av att detta material bringas att innehålla aluminium i sådan grad att x ligger i intervallet 0.4 - 0.5 för att pestbild- ning väsentligen skall förhindras.
Föreliggande förfarande avser att öka livslängden för värme- element väsentligen bestående av molybdensilicid samt lege- ringar av detta grundmaterial, när elementen opereras vid en låg temperatur, såsom i intervallet 400 - 600 °C. Exempel på dylika ugnar har nämnts ovan.
Med molybdensilicid samt legeringar av detta grundmaterial menas att molybdensiliciden exempelvis kan vara legerad med en mindre mängd wolfram.
Enligt uppfinningen innehåller värmeelementets motståndsmate- rial Mo(Si1¶AlQ2, där detta material bringas att innehålla aluminium i tillräcklig grad för att pestbildning väsentligen förhindras.
K:\Pa1ent\0001Mseßlutfiåreläggandeinl O3-03-19.doc 70 75 20 520 149 Det har nämligen mycket överraskande visat sig att när ett sådant material opereras vid nämnda temperaturintervall bil- das ingen eller endast mycket liten mängd pest.
Detta beror på att Alfih bildas på elementets yta varigenom pestbildning minskar eller försvinner.
Enligt en föredragen utföringsform bringas x att ligga i intervallet 0.2 - 0.6. Enligt detta utförande bildas mycket lite pest jämfört när konventionella element för det aktuella temperaturintervallet används.
Enligt en mycket föredragen utföringsform bringas X att ligga i intervallet 0.45 - 0.50. Härvid bildas ingen pest. Sökanden har i en test hållit ett dylikt element vid 450 °C under 12 månader utan att någon pestbildning skett. Detta var mycket överraskande.
Enligt ett föredraget utförande bringas värmeelementets mate- rial att innehålla upp till 40 vol% A120; Aluminiumoxiden ut- gör en mekaniskt stabiliserande fas för elementet.
K:\Patent\0001 Mseßlutfórelåggandejnl 03-03 -19.doc

Claims (1)

1. 0 520 149 Patentkrav l. Forfarande for att oka livslängden for värmeelement vä- sentligen bestående av molybdensilicid samt legeringar av detta grundmaterial, när elementen opereras vid en låg tempe- ratur, såsom i intervallet 400 - 600 °C, k ä n n e t e c k - n a t a v, att värmeelementets material bringas att utgöras av Mo(Sil¶AlX)2 och upp till 40% Al2O3och av att detta materi- al bringas att innehålla aluminium i sådan grad att x ligger i intervallet 0.4 - 0.5 for att pestbildning väsentligen skall förhindras. K:\Patent\0001Mseßlutföreläggandeinl 03-03-19.doc
SE0003512A 2000-09-29 2000-09-29 Förfarande för att öka livslängden hos värmeelement av molybdensilicidtyp vid lägre temperatur SE520149C2 (sv)

Priority Applications (12)

Application Number Priority Date Filing Date Title
SE0003512A SE520149C2 (sv) 2000-09-29 2000-09-29 Förfarande för att öka livslängden hos värmeelement av molybdensilicidtyp vid lägre temperatur
KR1020037004130A KR100558111B1 (ko) 2000-09-29 2001-09-25 저온에서 이규화몰리브덴 가열 요소의 유효 수명을연장시키는 방법
CNB018165141A CN1195706C (zh) 2000-09-29 2001-09-25 改善较低温度下二硅化钼加热元件使用寿命的方法
AT01970456T ATE356101T1 (de) 2000-09-29 2001-09-25 Verfahren zur verbesserung der lebensdauer eines molybdän-disilicid-heizelementes bei niedrigen temperaturen
US10/381,359 US6919544B2 (en) 2000-09-29 2001-09-25 Method to improve the life span of a heating element of a molybdenium disilicide at lower temperatures
EP01970456A EP1328491B1 (en) 2000-09-29 2001-09-25 Method to improve the life span of a heating element of a molybdenium disilicide at lower temperatures
DE60127152T DE60127152T2 (de) 2000-09-29 2001-09-25 Verfahren zur verbesserung der lebensdauer eines molybdän-disilicid-heizelementes bei niedrigen temperaturen
ES01970456T ES2281444T3 (es) 2000-09-29 2001-09-25 Metodo para mejorar el periodo de vida de un elemento calefactor de un disiliciuro de molibdeno a bajas temperaturas.
PCT/SE2001/002060 WO2002026657A1 (en) 2000-09-29 2001-09-25 Method to improve the life span of a heating element of a molybdenium disilicide at lower temperatures
AU2001290457A AU2001290457A1 (en) 2000-09-29 2001-09-25 Method to improve the life span of a heating element of a molybdenium disilicideat lower temperatures
JP2002530444A JP4571373B2 (ja) 2000-09-29 2001-09-25 モリブデン二ケイ化物からなる加熱要素の低温度における寿命の改良方法
NO20031362A NO20031362L (no) 2000-09-29 2003-03-25 Fremgangsmåte for å öke levetiden til et oppvarmingselement av molybden disilicid ved lave temperaturer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0003512A SE520149C2 (sv) 2000-09-29 2000-09-29 Förfarande för att öka livslängden hos värmeelement av molybdensilicidtyp vid lägre temperatur

Publications (3)

Publication Number Publication Date
SE0003512D0 SE0003512D0 (sv) 2000-09-29
SE0003512L SE0003512L (sv) 2002-03-30
SE520149C2 true SE520149C2 (sv) 2003-06-03

Family

ID=20281234

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0003512A SE520149C2 (sv) 2000-09-29 2000-09-29 Förfarande för att öka livslängden hos värmeelement av molybdensilicidtyp vid lägre temperatur

Country Status (12)

Country Link
US (1) US6919544B2 (sv)
EP (1) EP1328491B1 (sv)
JP (1) JP4571373B2 (sv)
KR (1) KR100558111B1 (sv)
CN (1) CN1195706C (sv)
AT (1) ATE356101T1 (sv)
AU (1) AU2001290457A1 (sv)
DE (1) DE60127152T2 (sv)
ES (1) ES2281444T3 (sv)
NO (1) NO20031362L (sv)
SE (1) SE520149C2 (sv)
WO (1) WO2002026657A1 (sv)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE520148C3 (sv) * 2000-11-24 2003-07-16 Sandvik Ab Förfarande för att öka livslängden hos värmeelement av molybdendisilicidtyp vid värmebehandling av elektroniska keramer
DE60316133T2 (de) * 2002-04-05 2008-05-29 Sandvik Intellectual Property Ab Verfahren zur herstellung eines heizelements vom molybdänsilizid-typ
SE521796C2 (sv) * 2002-04-05 2003-12-09 Sandvik Ab Förfarande för tillverkning av ett värmeelement av molybdensilicidtyp jämte ett värmeelement
SE521794C2 (sv) * 2002-04-05 2003-12-09 Sandvik Ab Tillverkningsförfarande för ett värmeelement av molybdensilicidtyp, jämte ett värmeelement
US20060108635A1 (en) * 2004-11-23 2006-05-25 Alpha Omega Semiconductor Limited Trenched MOSFETS with part of the device formed on a (110) crystal plane
US10995036B2 (en) * 2018-03-18 2021-05-04 Sandvik Intellectual Property Ab Heating element

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE210969C1 (sv) *
SE223265C1 (sv) * 1968-10-22
SE204116C1 (sv) * 1965-01-01
GB834739A (en) 1957-04-12 1960-05-11 Kanthal Ab Improvements in or relating to the manufacture of electric resistance elements
DE1243078B (de) 1961-11-09 1967-06-22 Sigri Elektrographit Gmbh Sinterkoerper, vorzugsweise zur Verwendung als Heizelement
US3635824A (en) * 1969-07-03 1972-01-18 Bell Telephone Labor Inc Resistance heater and method for preparation thereof
US3763004A (en) * 1972-03-31 1973-10-02 Horizons Inc Method for producing electrical heating elements from metal plated images
US3895219A (en) * 1973-11-23 1975-07-15 Norton Co Composite ceramic heating element
US4433233A (en) * 1979-09-27 1984-02-21 Emerson Electric Co. Silicon carbide heating elements
US4486651A (en) * 1982-01-27 1984-12-04 Nippon Soken, Inc. Ceramic heater
US5186918A (en) * 1987-12-15 1993-02-16 Uop Substitution of Cr in place of Al in the framework of molecular sieve via treatment with fluoride salts
HUT70901A (en) * 1992-01-16 1995-11-28 Univ Cincinnati Electrical heating element, related composites, and composition and method for producing such products using dieless micropyretic synthesis
US5429997A (en) * 1993-04-07 1995-07-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Pest resistant MoSi2 materials and method of making
DE69424478T2 (de) * 1993-07-20 2001-01-18 Tdk Corp Keramisches Heizelement
WO1996032358A1 (en) 1995-04-11 1996-10-17 Micropyretics Heaters International Ceramic, intermetallic or metal ceramic composites with a reduced susceptibility to pesting
SE504235C2 (sv) 1995-04-11 1996-12-09 Kanthal Ab Elektriskt motståndselement av molybdensilicidtyp
WO1998051127A1 (en) * 1997-05-06 1998-11-12 Thermoceramix, L.L.C. Deposited resistive coatings
JP3657800B2 (ja) * 1998-02-20 2005-06-08 株式会社リケン 二珪化モリブデン系複合セラミックス発熱体及びその製造方法
SE520251C2 (sv) * 1999-05-20 2003-06-17 Sandvik Ab Motståndselement av molybdensilicidtyp för sintring av metallpulver
US20020028360A1 (en) * 1999-08-31 2002-03-07 Shaffer Peter T.B. Composite monolithic elements and methods for making such elements
SE519027C2 (sv) * 2000-05-18 2002-12-23 Sandvik Ab Förfarande för att öka livslängden hos värmeelement vid lägre temperatur

Also Published As

Publication number Publication date
SE0003512D0 (sv) 2000-09-29
NO20031362D0 (no) 2003-03-25
US20040056021A1 (en) 2004-03-25
EP1328491A1 (en) 2003-07-23
SE0003512L (sv) 2002-03-30
CN1195706C (zh) 2005-04-06
EP1328491B1 (en) 2007-03-07
ES2281444T3 (es) 2007-10-01
DE60127152D1 (de) 2007-04-19
WO2002026657A1 (en) 2002-04-04
JP4571373B2 (ja) 2010-10-27
ATE356101T1 (de) 2007-03-15
NO20031362L (no) 2003-03-25
US6919544B2 (en) 2005-07-19
DE60127152T2 (de) 2008-01-03
JP2004510054A (ja) 2004-04-02
KR100558111B1 (ko) 2006-03-10
CN1466556A (zh) 2004-01-07
KR20030059149A (ko) 2003-07-07
AU2001290457A1 (en) 2002-04-08

Similar Documents

Publication Publication Date Title
Rosztoczy et al. Germanium‐Doped Gallium Arsenide
SE520149C2 (sv) Förfarande för att öka livslängden hos värmeelement av molybdensilicidtyp vid lägre temperatur
Polyakov et al. Electrical properties, deep trap and luminescence spectra in semi-insulating, Czochralski β-Ga2O3 (Mg)
DE1212639B (de) Sperrschichtelektrodensystem, das einen halbleitenden einkristall aus germanium oder silizium enthaelt
ATE275115T1 (de) Hochreines, silikonisiertes siliziumcarbid und hoher beständigkeit gegenüber termischen schock
ES2182248T3 (es) Conjunto de acondicionamiento y de aplicacion de un producto pulverulento liquido o pastoso sobre un soporte.
DE102014217956A1 (de) Herstellungsverfahren für einen Vanadium-dotierten SiC-Volumeneinkristall und Vanadium-dotiertes SiC-Substrat
AU2017305004B2 (en) High-strength, corrosion resistant aluminum alloys for use as fin stock and methods of making the same
Novikov et al. P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy
JPH0668970B2 (ja) 単結晶ウイスカー電灯フィラメント
US10529785B2 (en) Optoelectronic component and method for operating an optoelectronic component
Duggin The thermal conductivities of aluminium and platinum
Porada et al. AC electroluminescence of ZnS: Cu, Cl, Mn thin films in the structure In2O3 (Sn)-ZnS: Cu, Cl, Mn-SiOx-Al
Ermolovich et al. Mechanisms of the temperature quenching of luminescence due to deep centres in CdSexTe1− x (0<×< 1) alloys
Wu et al. Unipolar memristive switching in bulk positive temperature coefficient ceramic thermistor
US3453479A (en) Electrode system for electronic-discharge tubes
Mikulowski The effect of the prestrain temperature on the hardening of Zn and ZnGa monocrystals on the (0001)< 1120> system
ROZHDESTVENSKAYA et al. VARIATION OF THE ELECTRICAL CONDUCTIVITY OF SINGLE CRYSTALS AND CERAMIC OF SEMICONDUCTIVE BA 0. 8 CA 0. 2 TIO 3 WITH THE DOPANT CONCENTRATION
严群 et al. Effects of Additive Nd_2O_3 on Varistor Voltage and Microstructure of ZnO Varistor
CA2144673A1 (en) Refractory Brick
Anceau et al. Enhancement of localization and confinement effects in quaternary group‐III nitride multi‐quantum wells on SiC substrate
Wilde On the magnetisation limit of iron
Johnson Tungsten
Siegel et al. Electrical Properties of Large‐grain Polycrystalline GaP
Nie et al. A study on the properties of Mo-Y sub 2 sub sub 3 thermionic cathode wire

Legal Events

Date Code Title Description
NUG Patent has lapsed